TWI917399B - 用於產生用於硬遮罩及其他圖案化應用的高密度碳膜的方法 - Google Patents

用於產生用於硬遮罩及其他圖案化應用的高密度碳膜的方法

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Publication number
TWI917399B
TWI917399B TW110122305A TW110122305A TWI917399B TW I917399 B TWI917399 B TW I917399B TW 110122305 A TW110122305 A TW 110122305A TW 110122305 A TW110122305 A TW 110122305A TW I917399 B TWI917399 B TW I917399B
Authority
TW
Taiwan
Prior art keywords
approximately
diamond
carbon film
mpa
stress
Prior art date
Application number
TW110122305A
Other languages
English (en)
Chinese (zh)
Other versions
TW202200826A (zh
Inventor
許瑞元
帕拉米特 曼納
卡希克 加納基拉曼
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202200826A publication Critical patent/TW202200826A/zh
Application granted granted Critical
Publication of TWI917399B publication Critical patent/TWI917399B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Plasma Technology (AREA)
TW110122305A 2020-06-29 2021-06-18 用於產生用於硬遮罩及其他圖案化應用的高密度碳膜的方法 TWI917399B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US16/915,110 2020-06-29
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US17/035,192 2020-09-28
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications

Publications (2)

Publication Number Publication Date
TW202200826A TW202200826A (zh) 2022-01-01
TWI917399B true TWI917399B (zh) 2026-03-11

Family

ID=79317112

Family Applications (3)

Application Number Title Priority Date Filing Date
TW110122305A TWI917399B (zh) 2020-06-29 2021-06-18 用於產生用於硬遮罩及其他圖案化應用的高密度碳膜的方法
TW110122295A TWI917398B (zh) 2020-06-29 2021-06-18 用於產生用於硬遮罩及其他圖案化應用的高密度、摻雜氮碳膜的方法
TW110122277A TWI917397B (zh) 2020-06-29 2021-06-18 用於產生用於硬遮罩及其他圖案化應用的高密度摻雜碳膜的方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW110122295A TWI917398B (zh) 2020-06-29 2021-06-18 用於產生用於硬遮罩及其他圖案化應用的高密度、摻雜氮碳膜的方法
TW110122277A TWI917397B (zh) 2020-06-29 2021-06-18 用於產生用於硬遮罩及其他圖案化應用的高密度摻雜碳膜的方法

Country Status (5)

Country Link
JP (3) JP7678830B2 (enExample)
KR (3) KR20230029911A (enExample)
CN (3) CN116075920B (enExample)
TW (3) TWI917399B (enExample)
WO (3) WO2022005704A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

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CN110622280A (zh) 2017-06-08 2019-12-27 应用材料公司 用于硬掩模及其他图案化应用的高密度低温碳膜
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Publication number Publication date
CN116075920B (zh) 2026-07-03
TW202200836A (zh) 2022-01-01
TWI917397B (zh) 2026-03-11
JP2023533711A (ja) 2023-08-04
TW202200826A (zh) 2022-01-01
JP2023532335A (ja) 2023-07-27
TW202200825A (zh) 2022-01-01
CN116075920A (zh) 2023-05-05
CN115917707A (zh) 2023-04-04
KR20230027297A (ko) 2023-02-27
JP7704828B2 (ja) 2025-07-08
JP7678830B2 (ja) 2025-05-16
KR102921389B1 (ko) 2026-01-30
WO2022005700A1 (en) 2022-01-06
CN115885366A (zh) 2023-03-31
JP7710474B2 (ja) 2025-07-18
TWI917398B (zh) 2026-03-11
KR20230029911A (ko) 2023-03-03
WO2022005703A1 (en) 2022-01-06
KR20230029912A (ko) 2023-03-03
JP2023532883A (ja) 2023-08-01
WO2022005704A1 (en) 2022-01-06

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