TWI912531B - 石英板於單晶矽錠生長期間之用途 - Google Patents

石英板於單晶矽錠生長期間之用途

Info

Publication number
TWI912531B
TWI912531B TW111121105A TW111121105A TWI912531B TW I912531 B TWI912531 B TW I912531B TW 111121105 A TW111121105 A TW 111121105A TW 111121105 A TW111121105 A TW 111121105A TW I912531 B TWI912531 B TW I912531B
Authority
TW
Taiwan
Prior art keywords
melt
silicon
plates
weir
ingot
Prior art date
Application number
TW111121105A
Other languages
English (en)
Chinese (zh)
Other versions
TW202248470A (zh
Inventor
馬堤歐 潘諾卡加
富蘭斯卡 馬奇斯
帕羅 多席
Original Assignee
環球晶圓股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 環球晶圓股份有限公司 filed Critical 環球晶圓股份有限公司
Publication of TW202248470A publication Critical patent/TW202248470A/zh
Application granted granted Critical
Publication of TWI912531B publication Critical patent/TWI912531B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW111121105A 2021-06-07 2022-06-07 石英板於單晶矽錠生長期間之用途 TWI912531B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163197726P 2021-06-07 2021-06-07
US63/197,726 2021-06-07

Publications (2)

Publication Number Publication Date
TW202248470A TW202248470A (zh) 2022-12-16
TWI912531B true TWI912531B (zh) 2026-01-21

Family

ID=82196672

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111121105A TWI912531B (zh) 2021-06-07 2022-06-07 石英板於單晶矽錠生長期間之用途

Country Status (7)

Country Link
US (1) US12146236B2 (cg-RX-API-DMAC10.html)
EP (1) EP4352283B1 (cg-RX-API-DMAC10.html)
JP (1) JP7825644B2 (cg-RX-API-DMAC10.html)
KR (1) KR102992870B1 (cg-RX-API-DMAC10.html)
CN (1) CN117616160A (cg-RX-API-DMAC10.html)
TW (1) TWI912531B (cg-RX-API-DMAC10.html)
WO (1) WO2022258634A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170081499A (ko) * 2016-01-04 2017-07-12 주식회사 엘지실트론 단결정 잉곳 성장장치 및 이에 적용된 진동 방지판
CN108138354A (zh) * 2015-05-01 2018-06-08 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
CN108350600A (zh) * 2015-11-18 2018-07-31 各星有限公司 将从单晶锭切割的单晶段再循环的方法
CN110741111A (zh) * 2017-05-04 2020-01-31 各星有限公司 包括坩埚和屏障的拉晶系统和方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
JPS59141578U (ja) 1983-03-09 1984-09-21 株式会社日立製作所 単結晶引上装置
JPS61146788A (ja) * 1984-12-20 1986-07-04 Fujitsu Ltd 単結晶成長法
JPH0825833B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造方法
JPH0585876A (ja) * 1991-09-27 1993-04-06 Kawasaki Steel Corp シリコン単結晶引上装置
JPH0724976U (ja) * 1993-10-22 1995-05-12 川崎製鉄株式会社 シリコン単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
US10221500B2 (en) * 2017-01-04 2019-03-05 Corner Star Limited System for forming an ingot including crucible and conditioning members
KR102905365B1 (ko) 2020-11-11 2025-12-29 글로벌웨이퍼스 씨오., 엘티디. 도가니 침식이 감소된 단결정 실리콘 잉곳을 형성하는 방법들
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
US11767610B2 (en) 2020-12-31 2023-09-26 Globalwafers Co., Ltd. Use of buffer members during growth of single crystal silicon ingots

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108138354A (zh) * 2015-05-01 2018-06-08 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
CN108350600A (zh) * 2015-11-18 2018-07-31 各星有限公司 将从单晶锭切割的单晶段再循环的方法
KR20170081499A (ko) * 2016-01-04 2017-07-12 주식회사 엘지실트론 단결정 잉곳 성장장치 및 이에 적용된 진동 방지판
CN110741111A (zh) * 2017-05-04 2020-01-31 各星有限公司 包括坩埚和屏障的拉晶系统和方法

Also Published As

Publication number Publication date
JP2024520171A (ja) 2024-05-21
KR102992870B1 (ko) 2026-07-21
KR20240018581A (ko) 2024-02-13
CN117616160A (zh) 2024-02-27
TW202248470A (zh) 2022-12-16
US12146236B2 (en) 2024-11-19
US20220389609A1 (en) 2022-12-08
JP7825644B2 (ja) 2026-03-06
EP4352283A1 (en) 2024-04-17
EP4352283B1 (en) 2025-03-12
WO2022258634A1 (en) 2022-12-15

Similar Documents

Publication Publication Date Title
EP0170856B1 (en) Process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JP4225688B2 (ja) ポリシリコン装填物からシリコンメルトを製造する方法
JP5909276B2 (ja) 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長
CN118854432B (zh) 用于以连续直拉法生长单晶硅锭的方法
TWI609104B (zh) 連續cz方法和設備
JP2002535223A (ja) 高品質単結晶製造のために多結晶シリコンを積み重ね、溶融させる方法
CN109537045B (zh) 用于硅晶锭生长的换热器、硅晶锭的生长炉和制备硅晶锭的方法
JP7825644B2 (ja) 単結晶シリコンインゴットの成長中の石英プレートの使用
JP7826309B2 (ja) 坩堝の腐食を低減させた単結晶シリコンインゴットを形成する方法
JP2011057460A (ja) シリコン単結晶の育成方法
CN116783333B (zh) 用于以连续直拉法生长单晶硅锭的方法
TW202328509A (zh) 用於涉及矽進料管之惰性氣體控制之單晶矽錠生長之方法
EP4430234B1 (en) Use of arrays of quartz particles during single crystal silicon ingot production
JP2024520171A5 (cg-RX-API-DMAC10.html)
CN107208308A (zh) 制备多晶硅的方法
JP2007284323A (ja) 半導体単結晶の製造装置及び製造方法
JP2005289751A (ja) シリコン単結晶の引上方法