TWI905286B - 包括基板和高密度互連整合裝置的封裝 - Google Patents

包括基板和高密度互連整合裝置的封裝

Info

Publication number
TWI905286B
TWI905286B TW110137318A TW110137318A TWI905286B TW I905286 B TWI905286 B TW I905286B TW 110137318 A TW110137318 A TW 110137318A TW 110137318 A TW110137318 A TW 110137318A TW I905286 B TWI905286 B TW I905286B
Authority
TW
Taiwan
Prior art keywords
substrate
interconnects
integration device
solder
integration
Prior art date
Application number
TW110137318A
Other languages
English (en)
Chinese (zh)
Other versions
TW202236543A (zh
Inventor
孫洋楊
立生 翁
宋智民
Original Assignee
美商高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商高通公司 filed Critical 美商高通公司
Publication of TW202236543A publication Critical patent/TW202236543A/zh
Application granted granted Critical
Publication of TWI905286B publication Critical patent/TWI905286B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/616—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together package substrates, interposers or redistribution layers combined with bridge chips
    • H10W70/618—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together package substrates, interposers or redistribution layers combined with bridge chips the bridge chips being embedded in the package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07252—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/387—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/681—Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

Landscapes

  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Combinations Of Printed Boards (AREA)
TW110137318A 2020-11-10 2021-10-07 包括基板和高密度互連整合裝置的封裝 TWI905286B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/094,303 US12355000B2 (en) 2020-11-10 2020-11-10 Package comprising a substrate and a high-density interconnect integrated device
US17/094,303 2020-11-10

Publications (2)

Publication Number Publication Date
TW202236543A TW202236543A (zh) 2022-09-16
TWI905286B true TWI905286B (zh) 2025-11-21

Family

ID=78516922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110137318A TWI905286B (zh) 2020-11-10 2021-10-07 包括基板和高密度互連整合裝置的封裝

Country Status (7)

Country Link
US (1) US12355000B2 (https=)
EP (1) EP4244891A1 (https=)
JP (1) JP7823041B2 (https=)
KR (1) KR20230098583A (https=)
CN (1) CN116508154A (https=)
TW (1) TWI905286B (https=)
WO (1) WO2022103531A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI738525B (zh) * 2020-09-24 2021-09-01 矽品精密工業股份有限公司 電子封裝件及其製法
US12243792B2 (en) * 2020-12-21 2025-03-04 Intel Corporation Microelectronic structures including bridges
US12469811B2 (en) 2021-03-26 2025-11-11 Qualcomm Incorporated Package comprising wire bonds coupled to integrated devices
US20230035627A1 (en) * 2021-07-27 2023-02-02 Qualcomm Incorporated Split die integrated circuit (ic) packages employing die-to-die (d2d) connections in die-substrate standoff cavity, and related fabrication methods
US20250014961A1 (en) * 2023-07-07 2025-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Gap-fill dielectrics for die structures and methods of forming the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200636972A (en) * 2005-03-16 2006-10-16 Sony Corp Semiconductor device and method of manufacturing semiconductor device
US20110122590A1 (en) * 2009-11-23 2011-05-26 Dow Global Technologies Inc. Epoxy resin formulations for underfill applications
US20200294920A1 (en) * 2019-03-12 2020-09-17 Intel Corporation Substrate patch reconstitution options

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798909A (en) 1995-02-15 1998-08-25 International Business Machines Corporation Single-tiered organic chip carriers for wire bond-type chips
US5608262A (en) * 1995-02-24 1997-03-04 Lucent Technologies Inc. Packaging multi-chip modules without wire-bond interconnection
US5723906A (en) 1996-06-07 1998-03-03 Hewlett-Packard Company High-density wirebond chip interconnect for multi-chip modules
DE19649549C1 (de) 1996-11-29 1998-04-09 Bosch Gmbh Robert Anordnung, insbesondere zur Verwendung in einem elektronischen Steuergerät, und Verfahren zur Herstellung derselben
US6610930B1 (en) 1998-09-16 2003-08-26 Kulicke & Soffa Investments, Inc. Composite noble metal wire
US8354742B2 (en) 2008-03-31 2013-01-15 Stats Chippac, Ltd. Method and apparatus for a package having multiple stacked die
US7821104B2 (en) 2008-08-29 2010-10-26 Freescale Semiconductor, Inc. Package device having crack arrest feature and method of forming
US7872325B2 (en) 2009-02-24 2011-01-18 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Reduced-crosstalk wirebonding in an optical communication system
KR101601847B1 (ko) 2009-05-21 2016-03-09 삼성전자주식회사 반도체 패키지
US8227904B2 (en) 2009-06-24 2012-07-24 Intel Corporation Multi-chip package and method of providing die-to-die interconnects in same
JP5509724B2 (ja) 2009-08-20 2014-06-04 富士通株式会社 マルチチップモジュールの製造方法
US9355939B2 (en) 2010-03-02 2016-05-31 Stats Chippac Ltd. Integrated circuit package stacking system with shielding and method of manufacture thereof
US8654538B2 (en) 2010-03-30 2014-02-18 Ibiden Co., Ltd. Wiring board and method for manufacturing the same
US9059179B2 (en) 2011-12-28 2015-06-16 Broadcom Corporation Semiconductor package with a bridge interposer
US8546955B1 (en) 2012-08-16 2013-10-01 Xilinx, Inc. Multi-die stack package
US8946900B2 (en) 2012-10-31 2015-02-03 Intel Corporation X-line routing for dense multi-chip-package interconnects
US9190380B2 (en) 2012-12-06 2015-11-17 Intel Corporation High density substrate routing in BBUL package
US8901748B2 (en) 2013-03-14 2014-12-02 Intel Corporation Direct external interconnect for embedded interconnect bridge package
US9673131B2 (en) * 2013-04-09 2017-06-06 Intel Corporation Integrated circuit package assemblies including a glass solder mask layer
US8916981B2 (en) 2013-05-10 2014-12-23 Intel Corporation Epoxy-amine underfill materials for semiconductor packages
US9041205B2 (en) 2013-06-28 2015-05-26 Intel Corporation Reliable microstrip routing for electronics components
US10192810B2 (en) 2013-06-28 2019-01-29 Intel Corporation Underfill material flow control for reduced die-to-die spacing in semiconductor packages
US9076754B2 (en) 2013-08-02 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC packages with heat sinks attached to heat dissipating rings
US9349703B2 (en) 2013-09-25 2016-05-24 Intel Corporation Method for making high density substrate interconnect using inkjet printing
US9177831B2 (en) 2013-09-30 2015-11-03 Intel Corporation Die assembly on thin dielectric sheet
US9642259B2 (en) 2013-10-30 2017-05-02 Qualcomm Incorporated Embedded bridge structure in a substrate
KR20150104467A (ko) 2014-03-05 2015-09-15 앰코 테크놀로지 코리아 주식회사 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스
US9666559B2 (en) * 2014-09-05 2017-05-30 Invensas Corporation Multichip modules and methods of fabrication
US9640521B2 (en) 2014-09-30 2017-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-die package with bridge layer and method for making the same
US9595496B2 (en) 2014-11-07 2017-03-14 Qualcomm Incorporated Integrated device package comprising silicon bridge in an encapsulation layer
US20160141234A1 (en) 2014-11-17 2016-05-19 Qualcomm Incorporated Integrated device package comprising silicon bridge in photo imageable layer
US9583462B2 (en) 2015-01-22 2017-02-28 Qualcomm Incorporated Damascene re-distribution layer (RDL) in fan out split die application
US9379090B1 (en) 2015-02-13 2016-06-28 Qualcomm Incorporated System, apparatus, and method for split die interconnection
US9418966B1 (en) 2015-03-23 2016-08-16 Xilinx, Inc. Semiconductor assembly having bridge module for die-to-die interconnection
KR102163039B1 (ko) * 2015-04-07 2020-10-08 삼성전기주식회사 인쇄회로기판, 그 제조방법, 및 전자부품 모듈
US9368450B1 (en) 2015-08-21 2016-06-14 Qualcomm Incorporated Integrated device package comprising bridge in litho-etchable layer
WO2017074392A1 (en) 2015-10-29 2017-05-04 Intel Corporation Metal-free frame design for silicon bridges for semiconductor packages
CN116110887A (zh) 2015-12-11 2023-05-12 英特尔公司 具有利用嵌入微电子衬底中的微电子桥连接的多个微电子器件的微电子结构
US9691675B1 (en) 2015-12-22 2017-06-27 Intel Corporation Method for forming an electrical device and electrical devices
US10950550B2 (en) 2015-12-22 2021-03-16 Intel Corporation Semiconductor package with through bridge die connections
WO2017111790A1 (en) 2015-12-23 2017-06-29 Manusharow Mathew J Improving size and efficiency of dies
US10497674B2 (en) 2016-01-27 2019-12-03 Amkor Technology, Inc. Semiconductor package and fabricating method thereof
US10170428B2 (en) 2016-06-29 2019-01-01 Intel Corporation Cavity generation for embedded interconnect bridges utilizing temporary structures
KR102632563B1 (ko) 2016-08-05 2024-02-02 삼성전자주식회사 반도체 패키지
US10037970B2 (en) 2016-09-08 2018-07-31 Nxp Usa, Inc. Multiple interconnections between die
US10833052B2 (en) 2016-10-06 2020-11-10 Micron Technology, Inc. Microelectronic package utilizing embedded bridge through-silicon-via interconnect component and related methods
KR102666151B1 (ko) 2016-12-16 2024-05-17 삼성전자주식회사 반도체 패키지
US10304799B2 (en) 2016-12-28 2019-05-28 Intel Corporation Land grid array package extension
US10515921B2 (en) 2017-07-27 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and method of fabricating semiconductor package
US10510721B2 (en) 2017-08-11 2019-12-17 Advanced Micro Devices, Inc. Molded chip combination
US10797022B2 (en) 2017-10-06 2020-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
KR102039710B1 (ko) 2017-10-19 2019-11-01 삼성전자주식회사 유기 인터포저를 포함하는 반도체 패키지
US11011503B2 (en) 2017-12-15 2021-05-18 Invensas Bonding Technologies, Inc. Direct-bonded optoelectronic interconnect for high-density integrated photonics
US11569198B2 (en) 2018-01-03 2023-01-31 Intel Corporation Stacked semiconductor die architecture with multiple layers of disaggregation
CN110197793A (zh) 2018-02-24 2019-09-03 华为技术有限公司 一种芯片及封装方法
US11538758B2 (en) 2018-03-19 2022-12-27 Intel Corporation Waveguide interconnect bridges
US10380496B2 (en) 2018-03-19 2019-08-13 Intel Corporation Quantum computing assemblies
US10593612B2 (en) 2018-03-19 2020-03-17 Stmicroelectronics S.R.L. SMDs integration on QFN by 3D stacked solution
US10580738B2 (en) * 2018-03-20 2020-03-03 International Business Machines Corporation Direct bonded heterogeneous integration packaging structures
US10535608B1 (en) 2018-07-24 2020-01-14 International Business Machines Corporation Multi-chip package structure having chip interconnection bridge which provides power connections between chip and package substrate
MY202246A (en) 2018-10-22 2024-04-19 Intel Corp Devices and methods for signal integrity protection technique
US11676941B2 (en) 2018-12-07 2023-06-13 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor package and fabricating method thereof
US10833679B2 (en) 2018-12-28 2020-11-10 Intel Corporation Multi-purpose interface for configuration data and user fabric data
US11735533B2 (en) 2019-06-11 2023-08-22 Intel Corporation Heterogeneous nested interposer package for IC chips
US11282806B2 (en) 2019-10-11 2022-03-22 Marvell Asia Pte, Ltd. Partitioned substrates with interconnect bridge
US11164817B2 (en) 2019-11-01 2021-11-02 International Business Machines Corporation Multi-chip package structures with discrete redistribution layers
US11282772B2 (en) 2019-11-06 2022-03-22 Advanced Semiconductor Engineering, Inc. Package structure, assembly structure and method for manufacturing the same
US11094637B2 (en) 2019-11-06 2021-08-17 International Business Machines Corporation Multi-chip package structures having embedded chip interconnect bridges and fan-out redistribution layers
US11133259B2 (en) * 2019-12-12 2021-09-28 International Business Machines Corporation Multi-chip package structure having high density chip interconnect bridge with embedded power distribution network
US11728894B2 (en) 2020-04-13 2023-08-15 Avicenatech Corp. Optically-enhanced multichip packaging
US12159840B2 (en) 2020-06-23 2024-12-03 Intel Corporation Scalable and interoperable PHYLESS die-to-die IO solution
US11973057B2 (en) 2020-12-15 2024-04-30 Analog Devices, Inc. Through-silicon transmission lines and other structures enabled by same
US12125815B2 (en) 2020-12-22 2024-10-22 Intel Corporation Assembly of 2XD module using high density interconnect bridges
US11532595B2 (en) 2021-03-02 2022-12-20 Micron Technology, Inc. Stacked semiconductor dies for semiconductor device assemblies
US12469811B2 (en) 2021-03-26 2025-11-11 Qualcomm Incorporated Package comprising wire bonds coupled to integrated devices
US20220375838A1 (en) 2021-05-24 2022-11-24 Qualcomm Incorporated Package comprising integrated devices coupled through a bridge
US20230035627A1 (en) 2021-07-27 2023-02-02 Qualcomm Incorporated Split die integrated circuit (ic) packages employing die-to-die (d2d) connections in die-substrate standoff cavity, and related fabrication methods
US11908764B2 (en) * 2021-08-31 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package including a circuit substrate having a cavity and a floor plate embedded in a dielectric material and a semiconductor die disposed in the cavity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200636972A (en) * 2005-03-16 2006-10-16 Sony Corp Semiconductor device and method of manufacturing semiconductor device
US20110122590A1 (en) * 2009-11-23 2011-05-26 Dow Global Technologies Inc. Epoxy resin formulations for underfill applications
US20200294920A1 (en) * 2019-03-12 2020-09-17 Intel Corporation Substrate patch reconstitution options

Also Published As

Publication number Publication date
WO2022103531A1 (en) 2022-05-19
CN116508154A (zh) 2023-07-28
JP7823041B2 (ja) 2026-03-03
KR20230098583A (ko) 2023-07-04
US20220149005A1 (en) 2022-05-12
EP4244891A1 (en) 2023-09-20
JP2023549685A (ja) 2023-11-29
TW202236543A (zh) 2022-09-16
US12355000B2 (en) 2025-07-08

Similar Documents

Publication Publication Date Title
TWI905286B (zh) 包括基板和高密度互連整合裝置的封裝
TWI904139B (zh) 包括虛設互連的封裝
TWI911361B (zh) 具有包括與基板的表面對準的表面互連的基板的封裝
TWI893068B (zh) 包含基板與耦接至基板的高密度互連結構之封裝
US12469811B2 (en) Package comprising wire bonds coupled to integrated devices
CN115362550B (zh) 包括具有在阻焊层之上的互连路由线路的基板的封装件
TW202331958A (zh) 包括具有柱互連和具有空腔的阻焊層的襯底的封裝
TW202418497A (zh) 包括位於整合元件與金屬化部分之間的芯粒的封裝
JP2025166172A (ja) 基板と基板に結合された高密度相互接続集積デバイスとを含むパッケージ
TW202243179A (zh) 包括基板和配置成用於對角佈線的互連裝置的封裝
TWI883205B (zh) 包括被配置為散熱器的引線鍵合的封裝
TWI891783B (zh) 包括嵌入在核心層中的高密度互連部分的基板
TWI922462B (zh) 包括基板以及耦合至基板的高密度互連整合元件的封裝
JP7789073B2 (ja) 周辺相互接続を備える基板をもつパッケージ
TWI921523B (zh) 包括經由橋耦合的整合裝置的封裝
TW202512462A (zh) 包括其中嵌入被動電子組件的基材的裝置
JP2025530390A (ja) 異なる材料の誘電体層を有する基板を備えるパッケージ
TW202443807A (zh) 包括嵌入式整合元件的封裝基板