TWI900395B - 包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑 - Google Patents

包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑

Info

Publication number
TWI900395B
TWI900395B TW114101256A TW114101256A TWI900395B TW I900395 B TWI900395 B TW I900395B TW 114101256 A TW114101256 A TW 114101256A TW 114101256 A TW114101256 A TW 114101256A TW I900395 B TWI900395 B TW I900395B
Authority
TW
Taiwan
Prior art keywords
substrate
wafer
temporary adhesive
temporary
polydimethylsiloxane
Prior art date
Application number
TW114101256A
Other languages
English (en)
Chinese (zh)
Other versions
TW202517747A (zh
Inventor
澤田和宏
森谷俊介
新城徹也
荻野浩司
奥野貴久
Original Assignee
日商日產化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學股份有限公司 filed Critical 日商日產化學股份有限公司
Publication of TW202517747A publication Critical patent/TW202517747A/zh
Application granted granted Critical
Publication of TWI900395B publication Critical patent/TWI900395B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/04—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving separate application of adhesive ingredients to the different surfaces to be joined
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/37—Applications of adhesives in processes or use of adhesives in the form of films or foils for repositionable or removable tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/31—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive effect being based on a Gecko structure
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2483/00—Presence of polysiloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
TW114101256A 2018-05-01 2019-04-26 包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑 TWI900395B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018088393 2018-05-01
JP2018-088393 2018-05-01

Publications (2)

Publication Number Publication Date
TW202517747A TW202517747A (zh) 2025-05-01
TWI900395B true TWI900395B (zh) 2025-10-01

Family

ID=68386240

Family Applications (2)

Application Number Title Priority Date Filing Date
TW114101256A TWI900395B (zh) 2018-05-01 2019-04-26 包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑
TW108114686A TWI873093B (zh) 2018-05-01 2019-04-26 包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108114686A TWI873093B (zh) 2018-05-01 2019-04-26 包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑

Country Status (8)

Country Link
US (1) US12559655B2 (https=)
EP (1) EP3790038A4 (https=)
JP (1) JP7424969B2 (https=)
KR (1) KR102799545B1 (https=)
CN (1) CN112074931A (https=)
SG (1) SG11202010863YA (https=)
TW (2) TWI900395B (https=)
WO (1) WO2019212008A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020111069A1 (ja) * 2018-11-28 2020-06-04 日産化学株式会社 接着剤組成物、積層体及び積層体の製造方法並びに半導体形成基板を薄化する方法
JP7759027B2 (ja) * 2020-08-27 2025-10-23 日産化学株式会社 積層体及び剥離剤組成物
JP7730456B2 (ja) * 2021-03-19 2025-08-28 日産化学株式会社 剥離剤組成物、積層体、積層体の製造方法、及び半導体基板の製造方法
CN113372725A (zh) * 2021-06-03 2021-09-10 广东恒大新材料科技有限公司 一种单组分加成型热固化硅橡胶组合物
EP4369379A4 (en) * 2021-07-26 2025-07-09 Nissan Chemical Corp METHOD FOR MANUFACTURING LAMINATED BODY AND KIT FOR ADHESIVE COMPOSITION
WO2023032782A1 (ja) 2021-08-30 2023-03-09 日産化学株式会社 接着剤組成物、積層体、及び加工された半導体基板の製造方法
JPWO2024154702A1 (https=) 2023-01-18 2024-07-25

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201139598A (en) * 2010-02-12 2011-11-16 Dow Corning Temporary wafer bonding method for semiconductor processing
TW201518416A (zh) * 2013-07-08 2015-05-16 Momentive Performance Mat Jp 接著性賦予劑、接著性聚有機矽氧烷組成物及光半導體裝置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1776837A (en) * 1928-10-22 1930-09-30 Florence B Maccarthy Dial-telephone lock
FR2704553B1 (fr) 1993-04-30 1995-06-09 Rhone Poulenc Chimie Alcools alpha-acétyléniques à longue chaîne comme inhibiteurs de réaction d'hydrosilylation, et leur application pour la préparation de compositions silicones durcissables stables.
WO2004051708A2 (de) 2002-11-29 2004-06-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zum bearbeiten eines wafers sowie wafer mit trennschicht und trägerschicht
WO2006093639A1 (en) * 2005-03-01 2006-09-08 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
JP4523489B2 (ja) 2005-05-30 2010-08-11 株式会社日立製作所 内部欠陥検査方法および内部欠陥検査装置
WO2007099146A1 (de) 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung
US20080014532A1 (en) * 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
DE102008044200B4 (de) 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155A1 (de) 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
JP2012169573A (ja) * 2011-02-17 2012-09-06 Furukawa Electric Co Ltd:The ダイシングダイボンドシートおよびｌｅｄ用サファイヤ基板の加工方法
JP5409695B2 (ja) 2011-04-26 2014-02-05 信越化学工業株式会社 オルガノポリシロキサン、オルガノポリシロキサンを含む仮接着剤組成物、及びそれを用いた薄型ウエハの製造方法
CN110058490A (zh) 2011-08-10 2019-07-26 日立化成株式会社 感光性树脂组合物、感光性薄膜、永久抗蚀剂以及永久抗蚀剂的制造方法
JP5687230B2 (ja) 2012-02-28 2015-03-18 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5767159B2 (ja) 2012-04-27 2015-08-19 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5767161B2 (ja) * 2012-05-08 2015-08-19 信越化学工業株式会社 ウエハ加工用仮接着材、それを用いたウエハ加工用部材、ウエハ加工体、及び薄型ウエハの作製方法
KR102077248B1 (ko) 2013-01-25 2020-02-13 삼성전자주식회사 기판 가공 방법
JP6583639B2 (ja) * 2014-06-10 2019-10-02 日産化学株式会社 仮接着剤を用いた積層体
WO2016181879A1 (ja) * 2015-05-11 2016-11-17 富士フイルム株式会社 仮止め接着剤、接着フィルム、接着性支持体および積層体
FR3048886A1 (fr) * 2016-03-17 2017-09-22 Bluestar Silicones France Gel silicone adhesif a la peau
EP3477685A4 (en) * 2016-06-22 2020-07-01 Nissan Chemical Corporation POLYDIMETHYLSILOXANE ADHESIVE
KR102718731B1 (ko) * 2017-05-24 2024-10-18 닛산 가가쿠 가부시키가이샤 에폭시변성 폴리실록산을 함유하는 가접착제
WO2020111069A1 (ja) * 2018-11-28 2020-06-04 日産化学株式会社 接着剤組成物、積層体及び積層体の製造方法並びに半導体形成基板を薄化する方法
KR102806830B1 (ko) * 2018-12-27 2025-05-13 닛산 가가쿠 가부시키가이샤 광조사 박리용 접착제 조성물 및 적층체, 그리고 적층체의 제조 방법 및 박리 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201139598A (en) * 2010-02-12 2011-11-16 Dow Corning Temporary wafer bonding method for semiconductor processing
TW201518416A (zh) * 2013-07-08 2015-05-16 Momentive Performance Mat Jp 接著性賦予劑、接著性聚有機矽氧烷組成物及光半導體裝置

Also Published As

Publication number Publication date
JP7424969B2 (ja) 2024-01-30
US12559655B2 (en) 2026-02-24
SG11202010863YA (en) 2020-11-27
TW202517747A (zh) 2025-05-01
CN112074931A (zh) 2020-12-11
US20210130666A1 (en) 2021-05-06
KR20210005028A (ko) 2021-01-13
EP3790038A1 (en) 2021-03-10
TWI873093B (zh) 2025-02-21
WO2019212008A1 (ja) 2019-11-07
JPWO2019212008A1 (ja) 2021-06-10
EP3790038A4 (en) 2022-01-12
TW201945505A (zh) 2019-12-01
KR102799545B1 (ko) 2025-04-23

Similar Documents

Publication Publication Date Title
TWI900395B (zh) 包含耐熱性聚合抑制劑之含有聚矽氧烷的暫時接著劑
CN109417026B (zh) 含有聚二甲基硅氧烷的粘接剂
JP7157391B2 (ja) エポキシ変性ポリシロキサンを含有する仮接着剤
JP6583639B2 (ja) 仮接着剤を用いた積層体
TWI778093B (zh) 含有含苯基之聚矽氧烷的暫時接著劑
KR20240165439A (ko) 폴리에테르 변성 실록산을 함유하는 접착제