TWI898786B - 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法以及反射型光罩之製造方法 - Google Patents

反射型光罩基底、反射型光罩、反射型光罩基底之製造方法以及反射型光罩之製造方法

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Publication number
TWI898786B
TWI898786B TW113130396A TW113130396A TWI898786B TW I898786 B TWI898786 B TW I898786B TW 113130396 A TW113130396 A TW 113130396A TW 113130396 A TW113130396 A TW 113130396A TW I898786 B TWI898786 B TW I898786B
Authority
TW
Taiwan
Prior art keywords
film
layer
reflective
reflective mask
protective film
Prior art date
Application number
TW113130396A
Other languages
English (en)
Chinese (zh)
Other versions
TW202447726A (zh
Inventor
赤木大二郎
岩岡啓明
西田航
石川一郎
佐佐木健一
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202447726A publication Critical patent/TW202447726A/zh
Application granted granted Critical
Publication of TWI898786B publication Critical patent/TWI898786B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW113130396A 2021-12-28 2022-12-27 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法以及反射型光罩之製造方法 TWI898786B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-214753 2021-12-28
JP2021214753 2021-12-28

Publications (2)

Publication Number Publication Date
TW202447726A TW202447726A (zh) 2024-12-01
TWI898786B true TWI898786B (zh) 2025-09-21

Family

ID=86998931

Family Applications (2)

Application Number Title Priority Date Filing Date
TW113130396A TWI898786B (zh) 2021-12-28 2022-12-27 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法以及反射型光罩之製造方法
TW111150131A TWI856466B (zh) 2021-12-28 2022-12-27 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法以及反射型光罩之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW111150131A TWI856466B (zh) 2021-12-28 2022-12-27 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法以及反射型光罩之製造方法

Country Status (5)

Country Link
US (2) US12105412B2 (enExample)
JP (2) JP7416343B2 (enExample)
KR (2) KR102891845B1 (enExample)
TW (2) TWI898786B (enExample)
WO (1) WO2023127799A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025027983A (ja) * 2023-08-16 2025-02-28 信越化学工業株式会社 反射型マスクブランク、及び反射型マスクの製造方法
JP2025073748A (ja) * 2023-10-27 2025-05-13 信越化学工業株式会社 反射型マスクブランク及び反射型マスクの製造方法
WO2025115437A1 (ja) * 2023-11-27 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
WO2025225218A1 (ja) * 2024-04-22 2025-10-30 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150261082A1 (en) * 2013-03-15 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and Method for Reflective-Type Mask
TW202127136A (zh) * 2019-09-30 2021-07-16 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
JP4521696B2 (ja) 2003-05-12 2010-08-11 Ｈｏｙａ株式会社 反射多層膜付き基板及び反射型マスクブランクス並びに反射型マスク
JP4346656B2 (ja) 2007-05-28 2009-10-21 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク
KR20130007533A (ko) * 2009-12-09 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 광학 부재
US20210096456A1 (en) 2019-09-30 2021-04-01 Hoya Corporation Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
JP6931729B1 (ja) 2020-03-27 2021-09-08 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150261082A1 (en) * 2013-03-15 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and Method for Reflective-Type Mask
TW202127136A (zh) * 2019-09-30 2021-07-16 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法

Also Published As

Publication number Publication date
KR102741928B1 (ko) 2024-12-16
US12105412B2 (en) 2024-10-01
TW202331810A (zh) 2023-08-01
KR20250005488A (ko) 2025-01-09
JP7652238B2 (ja) 2025-03-27
JP7416343B2 (ja) 2024-01-17
US20240427227A1 (en) 2024-12-26
KR20240024272A (ko) 2024-02-23
KR102891845B1 (ko) 2025-11-28
TWI856466B (zh) 2024-09-21
TW202447726A (zh) 2024-12-01
JPWO2023127799A1 (enExample) 2023-07-06
US20240272541A1 (en) 2024-08-15
JP2024024687A (ja) 2024-02-22
WO2023127799A1 (ja) 2023-07-06

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