TWI891170B - 射線裝置，薄片抽出裝置，薄片觀察系統及薄片製作方法 - Google Patents

射線裝置，薄片抽出裝置，薄片觀察系統及薄片製作方法

Info

Publication number
TWI891170B
TWI891170B TW112149267A TW112149267A TWI891170B TW I891170 B TWI891170 B TW I891170B TW 112149267 A TW112149267 A TW 112149267A TW 112149267 A TW112149267 A TW 112149267A TW I891170 B TWI891170 B TW I891170B
Authority
TW
Taiwan
Prior art keywords
thin
mark
sample
thin film
sheet
Prior art date
Application number
TW112149267A
Other languages
English (en)
Chinese (zh)
Other versions
TW202441563A (zh
Inventor
森下司
長谷川晶一
一宮豊
小野田有吾
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202441563A publication Critical patent/TW202441563A/zh
Application granted granted Critical
Publication of TWI891170B publication Critical patent/TWI891170B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
TW112149267A 2022-12-20 2023-12-18 射線裝置，薄片抽出裝置，薄片觀察系統及薄片製作方法 TWI891170B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2022/046768 2022-12-20
PCT/JP2022/046768 WO2024134744A1 (ja) 2022-12-20 2022-12-20 ビーム装置、ラメラ抽出装置、ラメラ観察システムおよびラメラ作製方法

Publications (2)

Publication Number Publication Date
TW202441563A TW202441563A (zh) 2024-10-16
TWI891170B true TWI891170B (zh) 2025-07-21

Family

ID=91588151

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112149267A TWI891170B (zh) 2022-12-20 2023-12-18 射線裝置，薄片抽出裝置，薄片觀察系統及薄片製作方法

Country Status (4)

Country Link
JP (1) JPWO2024134744A1 (https=)
KR (1) KR20250108652A (https=)
TW (1) TWI891170B (https=)
WO (1) WO2024134744A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148159A (ja) * 2000-11-06 2002-05-22 Hitachi Ltd 試料作製方法および試料作製装置
JP2012178347A (ja) * 2011-02-25 2012-09-13 Fei Co 荷電粒子ビーム・システムにおいて大電流モードと小電流モードとを高速に切り替える方法
US20130323937A1 (en) * 2012-05-29 2013-12-05 Carl Zeiss Microscopy Gmbh Combined Laser Processing System and Focused Ion Beam System
TW201931420A (zh) * 2017-11-17 2019-08-01 日商日立高新技術科學股份有限公司 帶電粒子束裝置
TW202121473A (zh) * 2019-11-20 2021-06-01 日商日立全球先端科技股份有限公司 薄片之製作方法、解析系統及試料之解析方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4037023B2 (ja) 1999-11-18 2008-01-23 エスアイアイ・ナノテクノロジー株式会社 透過電子顕微鏡用試料の切り込み加工方法及び作成方法
TWI686837B (zh) * 2012-12-31 2020-03-01 美商Fei公司 用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148159A (ja) * 2000-11-06 2002-05-22 Hitachi Ltd 試料作製方法および試料作製装置
JP2012178347A (ja) * 2011-02-25 2012-09-13 Fei Co 荷電粒子ビーム・システムにおいて大電流モードと小電流モードとを高速に切り替える方法
US20130323937A1 (en) * 2012-05-29 2013-12-05 Carl Zeiss Microscopy Gmbh Combined Laser Processing System and Focused Ion Beam System
TW201931420A (zh) * 2017-11-17 2019-08-01 日商日立高新技術科學股份有限公司 帶電粒子束裝置
TW202121473A (zh) * 2019-11-20 2021-06-01 日商日立全球先端科技股份有限公司 薄片之製作方法、解析系統及試料之解析方法

Also Published As

Publication number Publication date
JPWO2024134744A1 (https=) 2024-06-27
TW202441563A (zh) 2024-10-16
WO2024134744A1 (ja) 2024-06-27
KR20250108652A (ko) 2025-07-15

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