TWI890729B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法

Info

Publication number
TWI890729B
TWI890729B TW110101597A TW110101597A TWI890729B TW I890729 B TWI890729 B TW I890729B TW 110101597 A TW110101597 A TW 110101597A TW 110101597 A TW110101597 A TW 110101597A TW I890729 B TWI890729 B TW I890729B
Authority
TW
Taiwan
Prior art keywords
period
power
frequency
voltage
during
Prior art date
Application number
TW110101597A
Other languages
English (en)
Chinese (zh)
Other versions
TW202133262A (zh
Inventor
輿水地塩
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202133262A publication Critical patent/TW202133262A/zh
Application granted granted Critical
Publication of TWI890729B publication Critical patent/TWI890729B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW110101597A 2020-01-29 2021-01-15 電漿處理裝置及電漿處理方法 TWI890729B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-012239 2020-01-29
JP2020012239A JP7336395B2 (ja) 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW202133262A TW202133262A (zh) 2021-09-01
TWI890729B true TWI890729B (zh) 2025-07-21

Family

ID=76970232

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110101597A TWI890729B (zh) 2020-01-29 2021-01-15 電漿處理裝置及電漿處理方法

Country Status (5)

Country Link
US (1) US11417502B2 (enExample)
JP (1) JP7336395B2 (enExample)
KR (2) KR102857736B1 (enExample)
CN (2) CN120545158A (enExample)
TW (1) TWI890729B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039501B2 (ja) * 2019-01-25 2022-03-22 三菱ケミカルインフラテック株式会社 ブロックマット、ブロックマットの製造方法、および、護岸構造
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20250072991A (ko) * 2022-09-21 2025-05-26 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658201A (zh) * 2013-12-23 2018-02-02 瓦里安半导体设备公司 控制提供至基板的离子束的处理装置
TW201921417A (zh) * 2017-08-23 2019-06-01 日商東京威力科創股份有限公司 測定裝置、測定方法及電漿處理裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672455B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
KR20100001552A (ko) * 2008-06-27 2010-01-06 삼성전자주식회사 플라즈마를 이용한 식각 장치 및 플라즈마 식각 방법
KR101027471B1 (ko) * 2008-10-02 2011-04-06 엘아이지에이디피 주식회사 플라즈마 처리방법 및 처리장치
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5405504B2 (ja) * 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN107978506B (zh) * 2012-08-28 2021-07-09 先进工程解决方案全球控股私人有限公司 控制开关模式离子能量分布系统的方法
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6449674B2 (ja) * 2015-02-23 2019-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10622217B2 (en) * 2016-02-04 2020-04-14 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2019129123A (ja) * 2018-01-26 2019-08-01 東京エレクトロン株式会社 直流電圧を印加する方法及びプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658201A (zh) * 2013-12-23 2018-02-02 瓦里安半导体设备公司 控制提供至基板的离子束的处理装置
TW201921417A (zh) * 2017-08-23 2019-06-01 日商東京威力科創股份有限公司 測定裝置、測定方法及電漿處理裝置

Also Published As

Publication number Publication date
KR102857736B1 (ko) 2025-09-11
KR20210097027A (ko) 2021-08-06
JP7336395B2 (ja) 2023-08-31
US20210233745A1 (en) 2021-07-29
US11417502B2 (en) 2022-08-16
TW202133262A (zh) 2021-09-01
CN113192817B (zh) 2025-06-13
CN113192817A (zh) 2021-07-30
CN120545158A (zh) 2025-08-26
KR20250130751A (ko) 2025-09-02
JP2021118314A (ja) 2021-08-10

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