JP7336395B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP7336395B2
JP7336395B2 JP2020012239A JP2020012239A JP7336395B2 JP 7336395 B2 JP7336395 B2 JP 7336395B2 JP 2020012239 A JP2020012239 A JP 2020012239A JP 2020012239 A JP2020012239 A JP 2020012239A JP 7336395 B2 JP7336395 B2 JP 7336395B2
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period
voltage
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plasma processing
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JP2020012239A
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Japanese (ja)
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JP2021118314A5 (enExample
JP2021118314A (ja
Inventor
地塩 輿水
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2020012239A priority Critical patent/JP7336395B2/ja
Priority to US17/149,928 priority patent/US11417502B2/en
Priority to TW110101597A priority patent/TWI890729B/zh
Priority to CN202110067300.1A priority patent/CN113192817B/zh
Priority to KR1020210007717A priority patent/KR102857736B1/ko
Priority to CN202510680008.5A priority patent/CN120545158A/zh
Publication of JP2021118314A publication Critical patent/JP2021118314A/ja
Publication of JP2021118314A5 publication Critical patent/JP2021118314A5/ja
Application granted granted Critical
Publication of JP7336395B2 publication Critical patent/JP7336395B2/ja
Priority to KR1020250114078A priority patent/KR20250130751A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2020012239A 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法 Active JP7336395B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2020012239A JP7336395B2 (ja) 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法
TW110101597A TWI890729B (zh) 2020-01-29 2021-01-15 電漿處理裝置及電漿處理方法
US17/149,928 US11417502B2 (en) 2020-01-29 2021-01-15 Plasma processing system and substrate processing method
KR1020210007717A KR102857736B1 (ko) 2020-01-29 2021-01-19 플라즈마 처리 장치 및 플라즈마 처리 방법
CN202110067300.1A CN113192817B (zh) 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法
CN202510680008.5A CN120545158A (zh) 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法
KR1020250114078A KR20250130751A (ko) 2020-01-29 2025-08-18 플라즈마 처리 장치 및 플라즈마 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020012239A JP7336395B2 (ja) 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法

Publications (3)

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JP2021118314A JP2021118314A (ja) 2021-08-10
JP2021118314A5 JP2021118314A5 (enExample) 2022-09-20
JP7336395B2 true JP7336395B2 (ja) 2023-08-31

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JP2020012239A Active JP7336395B2 (ja) 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法

Country Status (5)

Country Link
US (1) US11417502B2 (enExample)
JP (1) JP7336395B2 (enExample)
KR (2) KR102857736B1 (enExample)
CN (2) CN120545158A (enExample)
TW (1) TWI890729B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039501B2 (ja) * 2019-01-25 2022-03-22 三菱ケミカルインフラテック株式会社 ブロックマット、ブロックマットの製造方法、および、護岸構造
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20250072991A (ko) * 2022-09-21 2025-05-26 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066593A (ja) 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP2016157735A (ja) 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20170229312A1 (en) 2016-02-04 2017-08-10 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672455B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
KR20100001552A (ko) * 2008-06-27 2010-01-06 삼성전자주식회사 플라즈마를 이용한 식각 장치 및 플라즈마 식각 방법
KR101027471B1 (ko) * 2008-10-02 2011-04-06 엘아이지에이디피 주식회사 플라즈마 처리방법 및 처리장치
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5405504B2 (ja) * 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN107978506B (zh) * 2012-08-28 2021-07-09 先进工程解决方案全球控股私人有限公司 控制开关模式离子能量分布系统的方法
US9293301B2 (en) * 2013-12-23 2016-03-22 Varian Semiconductor Equipment Associates, Inc. In situ control of ion angular distribution in a processing apparatus
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7138497B2 (ja) * 2017-08-23 2022-09-16 東京エレクトロン株式会社 測定装置、測定方法及びプラズマ処理装置
JP2019129123A (ja) * 2018-01-26 2019-08-01 東京エレクトロン株式会社 直流電圧を印加する方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066593A (ja) 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP2016157735A (ja) 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20170229312A1 (en) 2016-02-04 2017-08-10 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same

Also Published As

Publication number Publication date
KR102857736B1 (ko) 2025-09-11
KR20210097027A (ko) 2021-08-06
US20210233745A1 (en) 2021-07-29
TWI890729B (zh) 2025-07-21
US11417502B2 (en) 2022-08-16
TW202133262A (zh) 2021-09-01
CN113192817B (zh) 2025-06-13
CN113192817A (zh) 2021-07-30
CN120545158A (zh) 2025-08-26
KR20250130751A (ko) 2025-09-02
JP2021118314A (ja) 2021-08-10

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