KR102857736B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법

Info

Publication number
KR102857736B1
KR102857736B1 KR1020210007717A KR20210007717A KR102857736B1 KR 102857736 B1 KR102857736 B1 KR 102857736B1 KR 1020210007717 A KR1020210007717 A KR 1020210007717A KR 20210007717 A KR20210007717 A KR 20210007717A KR 102857736 B1 KR102857736 B1 KR 102857736B1
Authority
KR
South Korea
Prior art keywords
period
frequency
power
voltage
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210007717A
Other languages
English (en)
Korean (ko)
Other versions
KR20210097027A (ko
Inventor
치시오 고시미즈
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20210097027A publication Critical patent/KR20210097027A/ko
Priority to KR1020250114078A priority Critical patent/KR20250130751A/ko
Application granted granted Critical
Publication of KR102857736B1 publication Critical patent/KR102857736B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020210007717A 2020-01-29 2021-01-19 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102857736B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020250114078A KR20250130751A (ko) 2020-01-29 2025-08-18 플라즈마 처리 장치 및 플라즈마 처리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020012239A JP7336395B2 (ja) 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法
JPJP-P-2020-012239 2020-01-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020250114078A Division KR20250130751A (ko) 2020-01-29 2025-08-18 플라즈마 처리 장치 및 플라즈마 처리 방법

Publications (2)

Publication Number Publication Date
KR20210097027A KR20210097027A (ko) 2021-08-06
KR102857736B1 true KR102857736B1 (ko) 2025-09-11

Family

ID=76970232

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020210007717A Active KR102857736B1 (ko) 2020-01-29 2021-01-19 플라즈마 처리 장치 및 플라즈마 처리 방법
KR1020250114078A Pending KR20250130751A (ko) 2020-01-29 2025-08-18 플라즈마 처리 장치 및 플라즈마 처리 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020250114078A Pending KR20250130751A (ko) 2020-01-29 2025-08-18 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
US (1) US11417502B2 (enExample)
JP (1) JP7336395B2 (enExample)
KR (2) KR102857736B1 (enExample)
CN (2) CN120545158A (enExample)
TW (1) TWI890729B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039501B2 (ja) * 2019-01-25 2022-03-22 三菱ケミカルインフラテック株式会社 ブロックマット、ブロックマットの製造方法、および、護岸構造
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20250072991A (ko) * 2022-09-21 2025-05-26 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672455B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
KR20100001552A (ko) * 2008-06-27 2010-01-06 삼성전자주식회사 플라즈마를 이용한 식각 장치 및 플라즈마 식각 방법
KR101027471B1 (ko) * 2008-10-02 2011-04-06 엘아이지에이디피 주식회사 플라즈마 처리방법 및 처리장치
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5405504B2 (ja) * 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN107978506B (zh) * 2012-08-28 2021-07-09 先进工程解决方案全球控股私人有限公司 控制开关模式离子能量分布系统的方法
US9293301B2 (en) * 2013-12-23 2016-03-22 Varian Semiconductor Equipment Associates, Inc. In situ control of ion angular distribution in a processing apparatus
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6449674B2 (ja) * 2015-02-23 2019-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10622217B2 (en) * 2016-02-04 2020-04-14 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7138497B2 (ja) * 2017-08-23 2022-09-16 東京エレクトロン株式会社 測定装置、測定方法及びプラズマ処理装置
JP2019129123A (ja) * 2018-01-26 2019-08-01 東京エレクトロン株式会社 直流電圧を印加する方法及びプラズマ処理装置

Also Published As

Publication number Publication date
KR20210097027A (ko) 2021-08-06
JP7336395B2 (ja) 2023-08-31
US20210233745A1 (en) 2021-07-29
TWI890729B (zh) 2025-07-21
US11417502B2 (en) 2022-08-16
TW202133262A (zh) 2021-09-01
CN113192817B (zh) 2025-06-13
CN113192817A (zh) 2021-07-30
CN120545158A (zh) 2025-08-26
KR20250130751A (ko) 2025-09-02
JP2021118314A (ja) 2021-08-10

Similar Documents

Publication Publication Date Title
JP7734239B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR102719832B1 (ko) 기판 지지기 및 플라즈마 처리 장치
KR102820562B1 (ko) 플라즈마 처리 장치 및 에칭 방법
JP7745705B2 (ja) プラズマ処理装置、プラズマ処理方法、及び記憶媒体
KR20250130751A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US20190237305A1 (en) Method for applying dc voltage and plasma processing apparatus
KR102825584B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20250165260A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR102810325B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR102897823B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
TW202539303A (zh) 電漿處理方法及電漿處理裝置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0107 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U11-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)