TWI888470B - 電子機器 - Google Patents

電子機器 Download PDF

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Publication number
TWI888470B
TWI888470B TW110101049A TW110101049A TWI888470B TW I888470 B TWI888470 B TW I888470B TW 110101049 A TW110101049 A TW 110101049A TW 110101049 A TW110101049 A TW 110101049A TW I888470 B TWI888470 B TW I888470B
Authority
TW
Taiwan
Prior art keywords
pixel
electronic device
unit
signal processing
photoelectric conversion
Prior art date
Application number
TW110101049A
Other languages
English (en)
Chinese (zh)
Other versions
TW202143213A (zh
Inventor
中田征志
Original Assignee
日商索尼半導體解決方案公司
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Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202143213A publication Critical patent/TW202143213A/zh
Application granted granted Critical
Publication of TWI888470B publication Critical patent/TWI888470B/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/81—Camera processing pipelines; Components thereof for suppressing or minimising disturbance in the image signal generation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/61—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/14—Systems for two-way working
    • H04N7/141—Systems for two-way working between two video terminals, e.g. videophone
    • H04N7/142—Constructional details of the terminal equipment, e.g. arrangements of the camera and the display
    • H04N7/144—Constructional details of the terminal equipment, e.g. arrangements of the camera and the display camera and display on the same optical axis, e.g. optically multiplexing the camera and display for eye to eye contact
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/14—Systems for two-way working
    • H04N7/141—Systems for two-way working between two video terminals, e.g. videophone
    • H04N7/142—Constructional details of the terminal equipment, e.g. arrangements of the camera and the display
    • H04N2007/145—Handheld terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Studio Devices (AREA)
TW110101049A 2020-02-03 2021-01-12 電子機器 TWI888470B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-016524 2020-02-03
JP2020016524 2020-02-03

Publications (2)

Publication Number Publication Date
TW202143213A TW202143213A (zh) 2021-11-16
TWI888470B true TWI888470B (zh) 2025-07-01

Family

ID=77199289

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110101049A TWI888470B (zh) 2020-02-03 2021-01-12 電子機器

Country Status (8)

Country Link
US (1) US12035058B2 (https=)
EP (1) EP4102816A4 (https=)
JP (1) JPWO2021157324A1 (https=)
KR (1) KR20220135235A (https=)
CN (2) CN214381044U (https=)
DE (1) DE112021000853T5 (https=)
TW (1) TWI888470B (https=)
WO (1) WO2021157324A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI888470B (zh) * 2020-02-03 2025-07-01 日商索尼半導體解決方案公司 電子機器
CN114066785B (zh) * 2020-07-31 2025-05-23 北京小米移动软件有限公司 图像处理方法及装置、终端和存储介质
FR3153929B1 (fr) 2023-10-09 2025-09-26 Commissariat Energie Atomique Procédé de réalisation d’une couche continue de nitrure

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TW201608711A (zh) * 2014-08-22 2016-03-01 愛思開海力士有限公司 影像感測器及具有該影像感測器的電子裝置
US20180198980A1 (en) * 2017-01-06 2018-07-12 Intel Corporation Integrated Image Sensor and Display Pixel
US20190221598A1 (en) * 2017-09-28 2019-07-18 Semiconductor Components Industries, Llc Image sensors with diffractive lenses
US20190244994A1 (en) * 2017-09-28 2019-08-08 Semiconductor Components Industries, Llc Image sensors with diffractive lenses for stray light control
US20190267422A1 (en) * 2016-09-30 2019-08-29 Nikon Corporation Image sensor and focus adjustment device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013126180A (ja) * 2011-12-15 2013-06-24 Olympus Corp 映像装置
TW201608711A (zh) * 2014-08-22 2016-03-01 愛思開海力士有限公司 影像感測器及具有該影像感測器的電子裝置
US20190267422A1 (en) * 2016-09-30 2019-08-29 Nikon Corporation Image sensor and focus adjustment device
US20180198980A1 (en) * 2017-01-06 2018-07-12 Intel Corporation Integrated Image Sensor and Display Pixel
US20190221598A1 (en) * 2017-09-28 2019-07-18 Semiconductor Components Industries, Llc Image sensors with diffractive lenses
US20190244994A1 (en) * 2017-09-28 2019-08-08 Semiconductor Components Industries, Llc Image sensors with diffractive lenses for stray light control

Also Published As

Publication number Publication date
TW202143213A (zh) 2021-11-16
JPWO2021157324A1 (https=) 2021-08-12
CN214381044U (zh) 2021-10-08
EP4102816A1 (en) 2022-12-14
EP4102816A4 (en) 2023-08-16
KR20220135235A (ko) 2022-10-06
US20230030068A1 (en) 2023-02-02
CN113286058B (zh) 2025-10-28
CN113286058A (zh) 2021-08-20
DE112021000853T5 (de) 2022-12-08
WO2021157324A1 (ja) 2021-08-12
US12035058B2 (en) 2024-07-09

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