TWI875707B - 藥液及藥液收容體 - Google Patents

藥液及藥液收容體 Download PDF

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Publication number
TWI875707B
TWI875707B TW108129296A TW108129296A TWI875707B TW I875707 B TWI875707 B TW I875707B TW 108129296 A TW108129296 A TW 108129296A TW 108129296 A TW108129296 A TW 108129296A TW I875707 B TWI875707 B TW I875707B
Authority
TW
Taiwan
Prior art keywords
content
mass
oxide particles
ions
liquid medicine
Prior art date
Application number
TW108129296A
Other languages
English (en)
Chinese (zh)
Other versions
TW202018437A (zh
Inventor
上村哲也
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202018437A publication Critical patent/TW202018437A/zh
Application granted granted Critical
Publication of TWI875707B publication Critical patent/TWI875707B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/06—Silver salts
    • G03F7/063—Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Detergent Compositions (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW108129296A 2018-08-21 2019-08-16 藥液及藥液收容體 TWI875707B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018154496 2018-08-21
JP2018-154496 2018-08-21

Publications (2)

Publication Number Publication Date
TW202018437A TW202018437A (zh) 2020-05-16
TWI875707B true TWI875707B (zh) 2025-03-11

Family

ID=69592604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108129296A TWI875707B (zh) 2018-08-21 2019-08-16 藥液及藥液收容體

Country Status (4)

Country Link
JP (3) JPWO2020040003A1 (https=)
KR (2) KR102901692B1 (https=)
TW (1) TWI875707B (https=)
WO (1) WO2020040003A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7691260B2 (ja) * 2021-04-01 2025-06-11 富士フイルム株式会社 収容体の製造方法、及び、樹脂組成物の保管方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017169833A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、その製造方法、パターン形成方法及び電子デバイスの製造方法
TW201807506A (zh) * 2016-04-08 2018-03-01 富士軟片股份有限公司 處理液、其製造方法、圖案形成方法及電子器件的製造方法
TW201807500A (zh) * 2016-03-30 2018-03-01 富士軟片股份有限公司 保護膜形成用組成物、保護膜形成用組成物的製造方法、圖案形成方法及電子元件的製造方法
WO2018079449A1 (ja) * 2016-10-27 2018-05-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2018142888A1 (ja) * 2017-02-01 2018-08-09 富士フイルム株式会社 薬液の製造方法、及び、薬液の製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188333A (ja) * 2008-02-08 2009-08-20 Tokyo Electron Ltd パーティクル検出方法及び処理装置
US20160066581A1 (en) * 2014-09-08 2016-03-10 Michael N. Young Silver ion solution agricultural formulations
JP2015084122A (ja) 2015-01-08 2015-04-30 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液
CN108348327B (zh) * 2015-11-04 2021-10-01 克拉维斯塔医疗有限公司 模块化人工晶状体设计、工具和方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201807500A (zh) * 2016-03-30 2018-03-01 富士軟片股份有限公司 保護膜形成用組成物、保護膜形成用組成物的製造方法、圖案形成方法及電子元件的製造方法
WO2017169833A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、その製造方法、パターン形成方法及び電子デバイスの製造方法
TW201807506A (zh) * 2016-04-08 2018-03-01 富士軟片股份有限公司 處理液、其製造方法、圖案形成方法及電子器件的製造方法
WO2018079449A1 (ja) * 2016-10-27 2018-05-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2018142888A1 (ja) * 2017-02-01 2018-08-09 富士フイルム株式会社 薬液の製造方法、及び、薬液の製造装置

Also Published As

Publication number Publication date
TW202522140A (zh) 2025-06-01
JPWO2020040003A1 (ja) 2021-08-26
JP2024169664A (ja) 2024-12-05
WO2020040003A1 (ja) 2020-02-27
KR20210031940A (ko) 2021-03-23
JP2023001193A (ja) 2023-01-04
KR102640614B1 (ko) 2024-02-27
KR20240027880A (ko) 2024-03-04
JP7836256B2 (ja) 2026-03-26
TW202018437A (zh) 2020-05-16
KR102901692B1 (ko) 2025-12-18

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