TWI873328B - 脒鹽化合物、其二聚物化合物、薄膜形成用原料及薄膜之製造方法 - Google Patents

脒鹽化合物、其二聚物化合物、薄膜形成用原料及薄膜之製造方法 Download PDF

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TWI873328B
TWI873328B TW110112649A TW110112649A TWI873328B TW I873328 B TWI873328 B TW I873328B TW 110112649 A TW110112649 A TW 110112649A TW 110112649 A TW110112649 A TW 110112649A TW I873328 B TWI873328 B TW I873328B
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atom
thin film
compound
raw material
general formula
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TW110112649A
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TW202144376A (zh
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吉野智晴
大江佳毅
武田圭介
福島亮太
満井千瑛
山下敦史
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日商Ａｄｅｋａ股份有限公司
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    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
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    • C07F15/06—Cobalt compounds
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    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
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    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
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    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
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    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
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    • C07F3/06—Zinc compounds
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    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
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    • C07F7/22—Tin compounds
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW110112649A 2020-04-10 2021-04-08 脒鹽化合物、其二聚物化合物、薄膜形成用原料及薄膜之製造方法 TWI873328B (zh)

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JP2020070708 2020-04-10
JP2020-070708 2020-04-10

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TW202144376A TW202144376A (zh) 2021-12-01
TWI873328B true TWI873328B (zh) 2025-02-21

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US (1) US12275748B2 (https=)
EP (1) EP4134372A4 (https=)
JP (1) JP7787806B2 (https=)
KR (1) KR20220167299A (https=)
CN (1) CN115380038A (https=)
IL (1) IL297232B1 (https=)
TW (1) TWI873328B (https=)
WO (1) WO2021205958A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240032935A (ko) * 2021-07-12 2024-03-12 가부시키가이샤 아데카 코발트 화합물, 박막 형성용 원료, 박막 및 박막의 제조 방법
WO2025132279A1 (en) 2023-12-18 2025-06-26 Merck Patent Gmbh Group 13 metal compounds for ald applications

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006511716A (ja) * 2002-11-15 2006-04-06 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ 金属アミジナートを用いる原子層の析出

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006012052A2 (en) * 2004-06-25 2006-02-02 Arkema, Inc. Amidinate ligand containing chemical vapor deposition precursors
CN102993050A (zh) * 2006-06-28 2013-03-27 哈佛学院院长等 四脒基金属(iv)化合物及其在气相沉积中的用途
EP3539973A4 (en) 2016-11-08 2020-05-06 Adeka Corporation CONNECTION, STARTING MATERIAL FOR FORMING A THIN LAYER, METHOD FOR PRODUCING IT AND AMIDINE CONNECTION

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006511716A (ja) * 2002-11-15 2006-04-06 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ 金属アミジナートを用いる原子層の析出
CN102312214A (zh) * 2002-11-15 2012-01-11 哈佛学院院长等 使用脒基金属的原子层沉积

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
期刊 Jiaye Li, Jinping Wu, Chenggang Zhou, Bo Han, Xinjian Lei, Roy Gordon, Hansong Cheng, "On the relative stability of cobalt- and nickel-based amidinate complexes against β-migration", International Journal of Quantum Chemistry, 109, 4, WILEY, 15 March 2009, 756-763. *

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KR20220167299A (ko) 2022-12-20
WO2021205958A1 (ja) 2021-10-14
IL297232B1 (en) 2026-04-01
US20230151041A1 (en) 2023-05-18
TW202144376A (zh) 2021-12-01
EP4134372A1 (en) 2023-02-15
JPWO2021205958A1 (https=) 2021-10-14
US12275748B2 (en) 2025-04-15
EP4134372A4 (en) 2024-07-17
CN115380038A (zh) 2022-11-22
IL297232A (en) 2022-12-01
JP7787806B2 (ja) 2025-12-17

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