TWI866050B - 平板顯示器用光罩、平板顯示器用光罩的位置測量用標記的形成方法及平板顯示器用光罩的製造方法 - Google Patents
平板顯示器用光罩、平板顯示器用光罩的位置測量用標記的形成方法及平板顯示器用光罩的製造方法 Download PDFInfo
- Publication number
- TWI866050B TWI866050B TW112103767A TW112103767A TWI866050B TW I866050 B TWI866050 B TW I866050B TW 112103767 A TW112103767 A TW 112103767A TW 112103767 A TW112103767 A TW 112103767A TW I866050 B TWI866050 B TW I866050B
- Authority
- TW
- Taiwan
- Prior art keywords
- position measurement
- film
- flat panel
- panel display
- mask
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 195
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000005530 etching Methods 0.000 claims description 124
- 238000000059 patterning Methods 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 description 23
- 239000011651 chromium Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 17
- 238000001039 wet etching Methods 0.000 description 16
- 239000012528 membrane Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000007654 immersion Methods 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 4
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 238000011960 computer-aided design Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- -1 molybdenum silicide compound Chemical class 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical class [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022018326A JP2023115863A (ja) | 2022-02-08 | 2022-02-08 | Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法 |
| JP2022-018326 | 2022-02-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202332984A TW202332984A (zh) | 2023-08-16 |
| TWI866050B true TWI866050B (zh) | 2024-12-11 |
Family
ID=87540130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112103767A TWI866050B (zh) | 2022-02-08 | 2023-02-03 | 平板顯示器用光罩、平板顯示器用光罩的位置測量用標記的形成方法及平板顯示器用光罩的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023115863A (enrdf_load_stackoverflow) |
| KR (1) | KR20230120090A (enrdf_load_stackoverflow) |
| CN (1) | CN116577961A (enrdf_load_stackoverflow) |
| TW (1) | TWI866050B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117452778B (zh) * | 2023-11-08 | 2024-12-13 | 深圳清溢微电子有限公司 | 掩膜版二次曝光自动对位方法、装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001201844A (ja) * | 2000-01-21 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法およびフォトマスクの製造方法 |
| TW519701B (en) * | 2001-12-28 | 2003-02-01 | United Microelectronics Corp | Overlay mark structure and its measurement application |
| TWI271811B (en) * | 2005-01-13 | 2007-01-21 | Ind Tech Res Inst | Overlay measurement target |
| TWI374248B (enrdf_load_stackoverflow) * | 2004-05-28 | 2012-10-11 | Nikon Corp | |
| US20210225900A1 (en) * | 2018-12-04 | 2021-07-22 | Ordos Yuansheng Optoelectronics Co., Ltd. | Method for Preparing Array Substrate, Display Panel and Evaporation Apparatus |
| TW202205005A (zh) * | 2016-03-31 | 2022-02-01 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底之製造方法、反射型光罩之製造方法、及半導體裝置之製造方法 |
-
2022
- 2022-02-08 JP JP2022018326A patent/JP2023115863A/ja active Pending
-
2023
- 2023-01-12 KR KR1020230004397A patent/KR20230120090A/ko active Pending
- 2023-01-18 CN CN202310086669.6A patent/CN116577961A/zh active Pending
- 2023-02-03 TW TW112103767A patent/TWI866050B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001201844A (ja) * | 2000-01-21 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法およびフォトマスクの製造方法 |
| TW519701B (en) * | 2001-12-28 | 2003-02-01 | United Microelectronics Corp | Overlay mark structure and its measurement application |
| TWI374248B (enrdf_load_stackoverflow) * | 2004-05-28 | 2012-10-11 | Nikon Corp | |
| TWI271811B (en) * | 2005-01-13 | 2007-01-21 | Ind Tech Res Inst | Overlay measurement target |
| TW202205005A (zh) * | 2016-03-31 | 2022-02-01 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底之製造方法、反射型光罩之製造方法、及半導體裝置之製造方法 |
| US20210225900A1 (en) * | 2018-12-04 | 2021-07-22 | Ordos Yuansheng Optoelectronics Co., Ltd. | Method for Preparing Array Substrate, Display Panel and Evaporation Apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116577961A (zh) | 2023-08-11 |
| KR20230120090A (ko) | 2023-08-16 |
| TW202332984A (zh) | 2023-08-16 |
| JP2023115863A (ja) | 2023-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20140093215A (ko) | 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법 | |
| TWI512391B (zh) | A manufacturing method of an electronic device, a manufacturing method of a display device, a method of manufacturing a mask, and a mask | |
| JPH0635171A (ja) | 位相シフトマスクの製造方法および半導体集積回路装置の製造方法 | |
| JPH09115827A (ja) | 半導体装置製造用のレチクル | |
| KR101837247B1 (ko) | 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법 | |
| TW201704842A (zh) | 光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法 | |
| KR101308862B1 (ko) | 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법 | |
| TWI866050B (zh) | 平板顯示器用光罩、平板顯示器用光罩的位置測量用標記的形成方法及平板顯示器用光罩的製造方法 | |
| TWI838928B (zh) | 光罩坯料的製造方法以及光罩的製造方法 | |
| JP6232709B2 (ja) | 位相シフトマスク及び当該位相シフトマスクを用いたレジストパターン形成方法 | |
| CN101105624A (zh) | 光掩模与曝光方法 | |
| JP4794408B2 (ja) | フォトマスク及び半導体装置の製造方法 | |
| CN101310221A (zh) | 光掩膜、其制造方法及使用该光掩膜的图形形成方法 | |
| JPS63216052A (ja) | 露光方法 | |
| CN100559270C (zh) | 灰调掩模 | |
| JP2003248296A (ja) | 露光マスクおよびその製造方法、ならびに転写パターンの形成方法 | |
| JP7437959B2 (ja) | 修正フォトマスク、及び表示装置の製造方法 | |
| JP6718225B2 (ja) | フォトマスクおよびその製造方法 | |
| CN206594443U (zh) | 光掩模坯料和光掩模组 | |
| JP3529967B2 (ja) | アライメントマーク付きフォトマスク用ブランクスの製造方法 | |
| JP7489358B2 (ja) | パターン修正方法 | |
| TWI820920B (zh) | 光罩及光罩的製造方法 | |
| JP3173314B2 (ja) | 位相シフトマスクの製造方法 | |
| JP2005195877A (ja) | レチクル及び半導体装置の製造方法 | |
| CN100538513C (zh) | 在光罩上制作倾斜线路的方法 |