TWI860306B - 攝像元件及電子機器 - Google Patents
攝像元件及電子機器 Download PDFInfo
- Publication number
- TWI860306B TWI860306B TW108143063A TW108143063A TWI860306B TW I860306 B TWI860306 B TW I860306B TW 108143063 A TW108143063 A TW 108143063A TW 108143063 A TW108143063 A TW 108143063A TW I860306 B TWI860306 B TW I860306B
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- Prior art keywords
- electrode
- layer
- photoelectric conversion
- unit
- imaging element
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 133
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- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
- H10F39/1843—Infrared image sensors of the hybrid type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018247892 | 2018-12-28 | ||
| JP2018-247892 | 2018-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202036881A TW202036881A (zh) | 2020-10-01 |
| TWI860306B true TWI860306B (zh) | 2024-11-01 |
Family
ID=71125760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108143063A TWI860306B (zh) | 2018-12-28 | 2019-11-27 | 攝像元件及電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12074178B2 (enExample) |
| JP (1) | JPWO2020137282A1 (enExample) |
| CN (1) | CN112997312A (enExample) |
| TW (1) | TWI860306B (enExample) |
| WO (1) | WO2020137282A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11335826B2 (en) | 2020-06-30 | 2022-05-17 | Epistar Corporation | Semiconductor photo-detecting device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180219039A1 (en) * | 2015-07-22 | 2018-08-02 | Sony Semiconductor Solutions Corporation | Imaging device and method for manufacturing the same |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613598A (ja) * | 1992-06-24 | 1994-01-21 | Fuji Xerox Co Ltd | イメージセンサの透明電極の製造方法 |
| JP2009135318A (ja) * | 2007-11-30 | 2009-06-18 | Fujifilm Corp | 光電変換素子、撮像素子及び光センサー |
| JP5336102B2 (ja) * | 2008-04-03 | 2013-11-06 | 三菱電機株式会社 | Ｔｆｔ基板 |
| JP5520560B2 (ja) * | 2009-09-29 | 2014-06-11 | 富士フイルム株式会社 | 光電変換素子、光電変換素子材料、光センサ、及び撮像素子 |
| JP5352495B2 (ja) * | 2010-02-18 | 2013-11-27 | 富士フイルム株式会社 | 光電変換素子、光センサ、及び撮像素子の作製方法 |
| JP5288640B2 (ja) | 2010-03-31 | 2013-09-11 | 富士フイルム株式会社 | 撮像素子及びその製造方法 |
| JP5454394B2 (ja) * | 2010-07-09 | 2014-03-26 | ソニー株式会社 | 光電変換素子及び固体撮像装置 |
| JP6295693B2 (ja) * | 2014-02-07 | 2018-03-20 | ソニー株式会社 | 撮像装置 |
| JP6903896B2 (ja) * | 2016-01-13 | 2021-07-14 | ソニーグループ株式会社 | 受光素子の製造方法 |
| JP6780421B2 (ja) | 2016-03-01 | 2020-11-04 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法 |
| WO2017154444A1 (ja) * | 2016-03-09 | 2017-09-14 | ソニー株式会社 | 光電変換素子及び撮像装置 |
| JP2017175102A (ja) * | 2016-03-16 | 2017-09-28 | ソニー株式会社 | 光電変換素子及びその製造方法並びに撮像装置 |
| CN115799286A (zh) | 2016-03-16 | 2023-03-14 | 索尼公司 | 光电转换元件及其制造方法和摄像装置 |
| US10818718B2 (en) * | 2016-07-20 | 2020-10-27 | Sony Corporation | Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus |
| CN110226228B (zh) * | 2017-01-24 | 2024-02-20 | 索尼半导体解决方案公司 | 光接收器件、光接收器件制造方法、摄像器件和电子设备 |
| WO2018155183A1 (ja) * | 2017-02-21 | 2018-08-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および電子機器 |
-
2019
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- 2019-11-22 WO PCT/JP2019/045725 patent/WO2020137282A1/ja not_active Ceased
- 2019-11-22 CN CN201980073728.8A patent/CN112997312A/zh active Pending
- 2019-11-22 US US17/309,790 patent/US12074178B2/en active Active
- 2019-11-27 TW TW108143063A patent/TWI860306B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180219039A1 (en) * | 2015-07-22 | 2018-08-02 | Sony Semiconductor Solutions Corporation | Imaging device and method for manufacturing the same |
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| US20220109017A1 (en) | 2022-04-07 |
| TW202036881A (zh) | 2020-10-01 |
| CN112997312A (zh) | 2021-06-18 |
| WO2020137282A1 (ja) | 2020-07-02 |
| US12074178B2 (en) | 2024-08-27 |
| JPWO2020137282A1 (ja) | 2021-11-11 |
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