CN112997312A - 摄像装置和电子设备 - Google Patents

摄像装置和电子设备 Download PDF

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Publication number
CN112997312A
CN112997312A CN201980073728.8A CN201980073728A CN112997312A CN 112997312 A CN112997312 A CN 112997312A CN 201980073728 A CN201980073728 A CN 201980073728A CN 112997312 A CN112997312 A CN 112997312A
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CN
China
Prior art keywords
electrode
layer
photoelectric conversion
image pickup
pickup apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980073728.8A
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English (en)
Chinese (zh)
Inventor
山根千种
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN112997312A publication Critical patent/CN112997312A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
CN201980073728.8A 2018-12-28 2019-11-22 摄像装置和电子设备 Pending CN112997312A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018247892 2018-12-28
JP2018-247892 2018-12-28
PCT/JP2019/045725 WO2020137282A1 (ja) 2018-12-28 2019-11-22 撮像素子および電子機器

Publications (1)

Publication Number Publication Date
CN112997312A true CN112997312A (zh) 2021-06-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980073728.8A Pending CN112997312A (zh) 2018-12-28 2019-11-22 摄像装置和电子设备

Country Status (5)

Country Link
US (1) US12074178B2 (enExample)
JP (1) JPWO2020137282A1 (enExample)
CN (1) CN112997312A (enExample)
TW (1) TWI860306B (enExample)
WO (1) WO2020137282A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11335826B2 (en) 2020-06-30 2022-05-17 Epistar Corporation Semiconductor photo-detecting device

Citations (4)

* Cited by examiner, † Cited by third party
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CN102034933A (zh) * 2009-09-29 2011-04-27 富士胶片株式会社 光电转换装置，光电转换装置材料，光传感器和成像装置
WO2012005174A1 (ja) * 2010-07-09 2012-01-12 ソニー株式会社 光電変換素子及び固体撮像装置
CN107851650A (zh) * 2015-07-22 2018-03-27 索尼半导体解决方案公司 摄像装置及其制造方法
CN108701706A (zh) * 2016-03-16 2018-10-23 索尼公司 光电转换元件及其制造方法和摄像装置

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JPH0613598A (ja) * 1992-06-24 1994-01-21 Fuji Xerox Co Ltd イメージセンサの透明電極の製造方法
JP2009135318A (ja) * 2007-11-30 2009-06-18 Fujifilm Corp 光電変換素子、撮像素子及び光センサー
JP5336102B2 (ja) * 2008-04-03 2013-11-06 三菱電機株式会社 Ｔｆｔ基板
JP5352495B2 (ja) * 2010-02-18 2013-11-27 富士フイルム株式会社 光電変換素子、光センサ、及び撮像素子の作製方法
JP5288640B2 (ja) 2010-03-31 2013-09-11 富士フイルム株式会社 撮像素子及びその製造方法
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置
JP6903896B2 (ja) * 2016-01-13 2021-07-14 ソニーグループ株式会社 受光素子の製造方法
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
WO2017154444A1 (ja) * 2016-03-09 2017-09-14 ソニー株式会社 光電変換素子及び撮像装置
CN115799286A (zh) 2016-03-16 2023-03-14 索尼公司 光电转换元件及其制造方法和摄像装置
US10818718B2 (en) * 2016-07-20 2020-10-27 Sony Corporation Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus
CN110226228B (zh) * 2017-01-24 2024-02-20 索尼半导体解决方案公司 光接收器件、光接收器件制造方法、摄像器件和电子设备
WO2018155183A1 (ja) * 2017-02-21 2018-08-30 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034933A (zh) * 2009-09-29 2011-04-27 富士胶片株式会社 光电转换装置，光电转换装置材料，光传感器和成像装置
WO2012005174A1 (ja) * 2010-07-09 2012-01-12 ソニー株式会社 光電変換素子及び固体撮像装置
CN107851650A (zh) * 2015-07-22 2018-03-27 索尼半导体解决方案公司 摄像装置及其制造方法
CN108701706A (zh) * 2016-03-16 2018-10-23 索尼公司 光电转换元件及其制造方法和摄像装置

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US20220109017A1 (en) 2022-04-07
TW202036881A (zh) 2020-10-01
WO2020137282A1 (ja) 2020-07-02
US12074178B2 (en) 2024-08-27
JPWO2020137282A1 (ja) 2021-11-11
TWI860306B (zh) 2024-11-01

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