TWI858047B - 處理裝置及處理方法 - Google Patents

處理裝置及處理方法 Download PDF

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Publication number
TWI858047B
TWI858047B TW109111892A TW109111892A TWI858047B TW I858047 B TWI858047 B TW I858047B TW 109111892 A TW109111892 A TW 109111892A TW 109111892 A TW109111892 A TW 109111892A TW I858047 B TWI858047 B TW I858047B
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TW
Taiwan
Prior art keywords
wafer
separation
processing
edge
layer
Prior art date
Application number
TW109111892A
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English (en)
Chinese (zh)
Other versions
TW202046391A (zh
Inventor
田之上隼斗
川口義広
山下陽平
森弘明
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202046391A publication Critical patent/TW202046391A/zh
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Publication of TWI858047B publication Critical patent/TWI858047B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109111892A 2019-04-19 2020-04-09 處理裝置及處理方法 TWI858047B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-080300 2019-04-19
JP2019080300 2019-04-19

Publications (2)

Publication Number Publication Date
TW202046391A TW202046391A (zh) 2020-12-16
TWI858047B true TWI858047B (zh) 2024-10-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW109111892A TWI858047B (zh) 2019-04-19 2020-04-09 處理裝置及處理方法

Country Status (3)

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JP (1) JP7129558B2 (https=)
TW (1) TWI858047B (https=)
WO (1) WO2020213479A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7643816B2 (ja) * 2021-03-09 2025-03-11 東京エレクトロン株式会社 積層基板の製造方法
US20240162061A1 (en) * 2021-03-12 2024-05-16 Tokyo Electron Limited Substrate processing apparatus, substrate processing system, and substrate processing method
JP7772523B2 (ja) * 2021-08-16 2025-11-18 株式会社ディスコ ウエーハの加工方法
CN119256388A (zh) * 2022-06-07 2025-01-03 东京毅力科创株式会社 基板处理系统和基板处理方法
US20240067555A1 (en) * 2022-08-22 2024-02-29 Uti Inc. Method of manufacturing sapphire cover window and sapphire cover window manufactured thereby
WO2025204976A1 (ja) * 2024-03-27 2025-10-02 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009007003A1 (en) * 2007-07-11 2009-01-15 S.O.I. Tec Silicon On Insulator Technologies Method for recycling a substrate, laminated water fabricating method and suitable recycled donor substrate
JP2010021398A (ja) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
WO2012014716A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 チップの製造方法
JP5093850B2 (ja) * 2008-06-26 2012-12-12 リンテック株式会社 シート剥離装置及び剥離方法
JP2015204442A (ja) * 2014-04-16 2015-11-16 信越ポリマー株式会社 原盤製造方法及び原盤
US20160064229A1 (en) * 2013-04-18 2016-03-03 Hanwha Techwin Co., Ltd. Method and apparatus for thinning wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5614738B2 (ja) * 2010-01-26 2014-10-29 国立大学法人埼玉大学 基板加工方法
US9214353B2 (en) 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP2015032690A (ja) 2013-08-02 2015-02-16 株式会社ディスコ 積層ウェーハの加工方法
JP6198618B2 (ja) 2014-01-24 2017-09-20 株式会社ディスコ ウェーハの加工方法
JP6552898B2 (ja) 2015-07-13 2019-07-31 株式会社ディスコ 多結晶ＳｉＣウエーハの生成方法
JP2017071074A (ja) * 2015-10-05 2017-04-13 国立大学法人埼玉大学 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法
JP6685817B2 (ja) 2016-04-19 2020-04-22 株式会社ディスコ ＳｉＣウエーハの加工方法
JP6619685B2 (ja) * 2016-04-19 2019-12-11 株式会社ディスコ ＳｉＣウエーハの加工方法
US10978311B2 (en) 2016-12-12 2021-04-13 Siltectra Gmbh Method for thinning solid body layers provided with components
CN110785833A (zh) 2017-06-19 2020-02-11 罗姆股份有限公司 半导体装置的制造方法及晶片粘合结构体
JP7120903B2 (ja) 2018-10-30 2022-08-17 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009007003A1 (en) * 2007-07-11 2009-01-15 S.O.I. Tec Silicon On Insulator Technologies Method for recycling a substrate, laminated water fabricating method and suitable recycled donor substrate
JP5093850B2 (ja) * 2008-06-26 2012-12-12 リンテック株式会社 シート剥離装置及び剥離方法
JP2010021398A (ja) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
WO2012014716A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 チップの製造方法
US20160064229A1 (en) * 2013-04-18 2016-03-03 Hanwha Techwin Co., Ltd. Method and apparatus for thinning wafer
JP2015204442A (ja) * 2014-04-16 2015-11-16 信越ポリマー株式会社 原盤製造方法及び原盤

Also Published As

Publication number Publication date
JPWO2020213479A1 (https=) 2020-10-22
JP7129558B2 (ja) 2022-09-01
TW202046391A (zh) 2020-12-16
WO2020213479A1 (ja) 2020-10-22

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