TWI850760B - 以散焦束導引在對比操作模式操作一多束粒子顯微鏡的方法與電腦程式產品以及多束粒子顯微鏡 - Google Patents

以散焦束導引在對比操作模式操作一多束粒子顯微鏡的方法與電腦程式產品以及多束粒子顯微鏡 Download PDF

Info

Publication number
TWI850760B
TWI850760B TW111133659A TW111133659A TWI850760B TW I850760 B TWI850760 B TW I850760B TW 111133659 A TW111133659 A TW 111133659A TW 111133659 A TW111133659 A TW 111133659A TW I850760 B TWI850760 B TW I850760B
Authority
TW
Taiwan
Prior art keywords
detection
individual
particle
individual particle
particle beams
Prior art date
Application number
TW111133659A
Other languages
English (en)
Chinese (zh)
Other versions
TW202326790A (zh
Inventor
斯特凡 舒伯特
Original Assignee
德商卡爾蔡司多重掃描電子顯微鏡有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商卡爾蔡司多重掃描電子顯微鏡有限公司 filed Critical 德商卡爾蔡司多重掃描電子顯微鏡有限公司
Publication of TW202326790A publication Critical patent/TW202326790A/zh
Application granted granted Critical
Publication of TWI850760B publication Critical patent/TWI850760B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2446Position sensitive detectors
    • H01J2237/24465Sectored detectors, e.g. quadrants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24495Signal processing, e.g. mixing of two or more signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24571Measurements of non-electric or non-magnetic variables
    • H01J2237/24578Spatial variables, e.g. position, distance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24592Inspection and quality control of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2809Scanning microscopes characterised by the imaging problems involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2814Measurement of surface topography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW111133659A 2021-09-17 2022-09-06 以散焦束導引在對比操作模式操作一多束粒子顯微鏡的方法與電腦程式產品以及多束粒子顯微鏡 TWI850760B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021124099.9 2021-09-17
DE102021124099.9A DE102021124099B4 (de) 2021-09-17 2021-09-17 Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops in einem Kontrast-Betriebsmodus mit defokussierter Strahlführung, Computerprogramprodukt und Vielstrahlteilchenmikroskop

Publications (2)

Publication Number Publication Date
TW202326790A TW202326790A (zh) 2023-07-01
TWI850760B true TWI850760B (zh) 2024-08-01

Family

ID=83191890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111133659A TWI850760B (zh) 2021-09-17 2022-09-06 以散焦束導引在對比操作模式操作一多束粒子顯微鏡的方法與電腦程式產品以及多束粒子顯微鏡

Country Status (9)

Country Link
US (1) US20240222069A1 (https=)
EP (1) EP4402710A1 (https=)
JP (1) JP7854044B2 (https=)
KR (1) KR102930155B1 (https=)
CN (1) CN117957631A (https=)
DE (1) DE102021124099B4 (https=)
NL (1) NL2033047B1 (https=)
TW (1) TWI850760B (https=)
WO (1) WO2023041191A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240128051A1 (en) 2022-10-14 2024-04-18 Carl Zeiss Multisem Gmbh Multi-beam charged particle beam system with anisotropic filtering for improved image contrast
WO2024227537A1 (en) 2023-05-02 2024-11-07 Carl Zeiss Multisem Gmbh Multi-beam charged particle microscope for inspection with improved image contrast

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192498A (ja) * 2010-03-15 2011-09-29 Hitachi High-Technologies Corp 検査装置および検査方法
US20170316912A1 (en) * 2015-02-06 2017-11-02 Carl Zeiss Microscopy Gmbh Particle beam system and method for the particle-optical examination of an object
US20190355544A1 (en) * 2017-03-20 2019-11-21 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
TW202107507A (zh) * 2019-07-02 2021-02-16 荷蘭商Asml荷蘭公司 帶電粒子束之局部控制的裝置和方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236738B9 (de) 2002-08-09 2010-07-15 Carl Zeiss Nts Gmbh Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren
CN102709143B (zh) 2003-09-05 2016-03-09 卡尔蔡司Smt有限责任公司 电子光学排布结构、多电子分束检验系统和方法
JP5663717B2 (ja) 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーCarl Zeiss Microscopy Gmbh 荷電粒子システム
CN102103966B (zh) 2005-11-28 2013-02-06 卡尔蔡司Smt有限责任公司 粒子光学组件
US9336981B2 (en) 2010-04-09 2016-05-10 Applied Materials Israel Ltd. Charged particle detection system and multi-beamlet inspection system
JP5951985B2 (ja) * 2011-12-27 2016-07-13 株式会社ホロン 円筒状原版検査装置および円筒状原版検査方法
DE102013014976A1 (de) 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Teilchenoptisches System
DE102013016113B4 (de) 2013-09-26 2018-11-29 Carl Zeiss Microscopy Gmbh Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem
NL2013411B1 (en) * 2014-09-04 2016-09-27 Univ Delft Tech Multi electron beam inspection apparatus.
JP2016139467A (ja) * 2015-01-26 2016-08-04 株式会社日立ハイテクノロジーズ 試料観察方法および試料観察装置
EP3104155A1 (en) * 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
US10192716B2 (en) 2015-09-21 2019-01-29 Kla-Tencor Corporation Multi-beam dark field imaging
JP6581940B2 (ja) 2016-04-15 2019-09-25 株式会社日立ハイテクノロジーズ 電子顕微鏡装置
KR102468155B1 (ko) * 2017-02-07 2022-11-17 에이에스엠엘 네델란즈 비.브이. 하전 입자 검출 방법 및 장치
CN112055886A (zh) * 2018-02-27 2020-12-08 卡尔蔡司MultiSEM有限责任公司 带电粒子多束系统及方法
IL278076B2 (en) * 2018-04-20 2025-08-01 Asml Netherlands Bv Pixel shape and section shape selection for large active area high speed detector
DE102020123567B4 (de) 2020-09-09 2025-02-13 Carl Zeiss Multisem Gmbh Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192498A (ja) * 2010-03-15 2011-09-29 Hitachi High-Technologies Corp 検査装置および検査方法
US20170316912A1 (en) * 2015-02-06 2017-11-02 Carl Zeiss Microscopy Gmbh Particle beam system and method for the particle-optical examination of an object
TW202133210A (zh) * 2015-02-06 2021-09-01 德商卡爾蔡司多重掃描電子顯微鏡有限公司 粒子束系統及物件之粒子光學檢查的方法
US20190355544A1 (en) * 2017-03-20 2019-11-21 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
TW202107507A (zh) * 2019-07-02 2021-02-16 荷蘭商Asml荷蘭公司 帶電粒子束之局部控制的裝置和方法

Also Published As

Publication number Publication date
EP4402710A1 (de) 2024-07-24
US20240222069A1 (en) 2024-07-04
TW202326790A (zh) 2023-07-01
KR102930155B1 (ko) 2026-02-25
DE102021124099A1 (de) 2023-03-23
NL2033047B1 (en) 2023-08-04
JP7854044B2 (ja) 2026-04-30
NL2033047A (en) 2023-03-24
JP2024535055A (ja) 2024-09-26
KR20240055877A (ko) 2024-04-29
DE102021124099B4 (de) 2023-09-28
WO2023041191A1 (de) 2023-03-23
CN117957631A (zh) 2024-04-30

Similar Documents

Publication Publication Date Title
US11657999B2 (en) Particle beam system and method for the particle-optical examination of an object
US11645740B2 (en) Method for detector equalization during the imaging of objects with a multi-beam particle microscope
KR20190126326A (ko) 하전 입자 빔 시스템 및 방법
KR20150079808A (ko) 샘플의 표면을 검사하는 장치 및 방법
KR102930154B1 (ko) 빔 전류 제어가 향상된 다중 빔 입자 현미경
JP7530583B2 (ja) ミラー動作モードを有する複数粒子ビームシステム、ミラー動作モードを有する複数粒子ビームシステムを動作させる方法、および関連するコンピュータプログラム製品
TWI850760B (zh) 以散焦束導引在對比操作模式操作一多束粒子顯微鏡的方法與電腦程式產品以及多束粒子顯微鏡
US20250104961A1 (en) Method for operating a multi-beam particle microscope, computer program product and multi-beam particle microscope
TWI813327B (zh) 藉由多束粒子顯微鏡逐區檢查樣本的方法、電腦程式產品、以及用於半導體樣本檢查的多束粒子顯微鏡及其用途
JP2024535055A5 (https=)
WO2026068197A1 (en) Method for setting a multi-channel detection unit of a multi-beam particle microscope during an inspection of charging samples, associated computer program product and multi-beam particle microscope