TWI849680B - Substrate processing apparatus and substrate processing method - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 508
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 387
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 364
- 238000000034 method Methods 0.000 claims description 38
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- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 16
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
Description
本發明係關於一種基板處理裝置及基板處理方法。 The present invention relates to a substrate processing device and a substrate processing method.
於被處理基板即例如半導體晶圓(以下,稱為晶圓)之表面,有時會附著半導體裝置之製造步驟中產生之物質。由於該等物質會降低半導體裝置之特性,故為去除該等物質,而使用複數種藥液進行晶圓表面之洗淨。 On the surface of the processed substrate, such as a semiconductor wafer (hereinafter referred to as a wafer), substances produced during the manufacturing steps of the semiconductor device may sometimes adhere to it. Since these substances may reduce the characteristics of the semiconductor device, a variety of chemical solutions are used to clean the wafer surface in order to remove these substances.
SPM液用於晶圓表面之洗淨。SPM液係硫酸與過氧化氫水之混合液。除剝離殘存於晶圓表面之抗蝕劑、去除將抗蝕劑灰化後之基板之殘渣外,SPM液還作為用以對元件分離後之基板進行氧化處理之藥液使用。SPM液不僅可用於例如一面使保持於旋轉平台上之晶圓旋轉一面對其表面供給藥液之單片式處理裝置,還可用於將複數片晶圓同時浸漬於裝滿藥液之處理槽內並進行洗淨之批量式處理裝置。 SPM liquid is used to clean the surface of wafers. SPM liquid is a mixture of sulfuric acid and hydrogen peroxide. In addition to stripping the anti-etching agent remaining on the surface of the wafer and removing the residue of the substrate after the anti-etching agent is ashed, SPM liquid is also used as a liquid for oxidation treatment of the substrate after the component is separated. SPM liquid can be used not only in single-wafer processing equipment that rotates the wafer held on a rotating platform while supplying liquid to its surface, but also in batch processing equipment that immerses multiple wafers in a processing tank filled with liquid and cleans them at the same time.
於批量式基板處理裝置中使用SPM液處理晶圓之情形時,一般將例 如數十片晶圓浸漬於加熱至100℃~130℃之SPM液內,經過特定時間後取出晶圓,之後重複進行浸漬接下來之晶圓之動作,藉此連續處理複數片晶圓。於此種連續處理中,由於處理槽內之SPM液會附著於晶圓表面,其之一部分被帶出至處理槽外而液面高度降低,故要於特定時序對SPM液補充硫酸及過氧化氫水。 When using SPM liquid to process wafers in a batch substrate processing device, generally, for example, dozens of wafers are immersed in SPM liquid heated to 100℃~130℃, and the wafers are taken out after a specific time, and then the next wafer is immersed repeatedly to continuously process multiple wafers. In this continuous processing, since the SPM liquid in the processing tank will adhere to the surface of the wafer, part of it will be taken out of the processing tank and the liquid level will decrease, so sulfuric acid and hydrogen peroxide water must be added to the SPM liquid at a specific time sequence.
又,已知過氧化氫為相對不穩定之物質。由於過氧化氫會隨著時間經過分解而產生水,故即便例如配合液面高度之降低而進行硫酸及過氧化氫水之補充,SPM液中之硫酸濃度亦會隨時間降低。當硫酸濃度降低時,污染物質之去除能力降低,故產生定期停止使用該處理槽之晶圓之處理,並對處理槽內之SPM液進行全量更換之作業,從而招致處理效率降低及/或藥液消耗量增大、伴隨於此之藥液成本上升。因此,於批量式基板處理裝置中,研討抑制去除污染物質之能力降低(專利文獻1)。 Furthermore, hydrogen peroxide is known to be a relatively unstable substance. Since hydrogen peroxide decomposes over time to produce water, even if sulfuric acid and hydrogen peroxide are replenished in accordance with the decrease in the liquid level, the sulfuric acid concentration in the SPM liquid will decrease over time. When the sulfuric acid concentration decreases, the ability to remove contaminants decreases, so the processing of the wafers in the processing tank is stopped periodically and the SPM liquid in the processing tank is replaced in full, resulting in a decrease in processing efficiency and/or an increase in the consumption of the chemical solution, and an increase in the cost of the chemical solution. Therefore, in batch substrate processing equipment, research is being conducted to suppress the decrease in the ability to remove contaminants (Patent Document 1).
於專利文獻1之基板處理裝置中,於循環流路中,於加熱器之下游側補充硫酸。於專利文獻1中,記載為藉由於循環流路中於加熱器之下游側補充硫酸,而抑制認為有助於有效去除污染物質之過氧化氫及卡羅酸被直接加熱而進行分解。 In the substrate processing device of Patent Document 1, sulfuric acid is added to the circulation flow path at the downstream side of the heater. Patent Document 1 states that by adding sulfuric acid to the circulation flow path at the downstream side of the heater, hydrogen peroxide and peroxodic acid, which are believed to be helpful in effectively removing pollutants, are prevented from being directly heated and decomposed.
[專利文獻1]日本專利2011-114305號公報 [Patent document 1] Japanese Patent Publication No. 2011-114305
於專利文獻1之基板處理裝置中,不管基板之種類為何,均將處理槽之SPM濃度調整為固定。然而,根據基板之種類,亦有即便不嚴格調整處理槽之SPM濃度亦可適當地處理基板者,於專利文獻1之基板處理裝置中,與處理基板所需之硫酸及過氧化氫水之量相比,有時會無謂地使用硫酸及過氧化氫水。 In the substrate processing apparatus of Patent Document 1, the SPM concentration of the processing tank is adjusted to be fixed regardless of the type of substrate. However, depending on the type of substrate, there are cases where the substrate can be properly processed even if the SPM concentration of the processing tank is not strictly adjusted. In the substrate processing apparatus of Patent Document 1, sulfuric acid and hydrogen peroxide are sometimes used unnecessarily compared to the amount of sulfuric acid and hydrogen peroxide required to process the substrate.
本發明係鑑於上述問題而完成者,目的在於提供一種可避免硫酸及過氧化氫水之過量使用之基板處理裝置及基板處理方法。 The present invention is completed in view of the above-mentioned problems, and its purpose is to provide a substrate processing device and substrate processing method that can avoid excessive use of sulfuric acid and hydrogen peroxide.
根據本發明之一態樣,基板處理方法於貯存有包含硫酸及過氧化氫水之處理液之處理槽中,將基板浸漬於上述處理液而處理上述基板。上述基板處理方法包含以下步驟:於將上述基板浸漬於上述處理槽之上述處理液之前,取得顯示上述基板相關之資訊之基板資訊;基於上述基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為調整上述處理液之處理液調整步驟;第1處理液調整步驟,其於上述選擇之步驟中選擇上述液體更換步驟之情形時,於上述處理槽之上述處理液不滿足特定條件時,自上述處理槽排出上述處理槽之上述處理液之至少一部分,對上述處理槽供給硫酸及過氧化氫水而調整上述處理槽之上述處理液;第2處理液調整步驟,其於上述選擇之步驟中選擇上述濃度調整步驟之情形時,一面使上述處理槽之上述處理液經由連接於上述處理槽之配管循環,一面調整上述處 理槽之上述處理液之濃度;及一面使於上述第1處理液調整步驟或上述第2處理液調整步驟中調整後之上述處理槽之上述處理液,經由連接於上述處理槽之配管循環,一面將上述基板浸漬於上述處理槽之上述處理液。 According to one aspect of the present invention, a substrate processing method processes the substrate by immersing the substrate in the processing liquid containing sulfuric acid and hydrogen peroxide in a processing tank storing the processing liquid. The substrate processing method includes the following steps: before immersing the substrate in the processing liquid in the processing tank, obtaining substrate information showing information related to the substrate; based on the substrate information, selecting either a liquid replacement step or a concentration adjustment step as a processing liquid adjustment step for adjusting the processing liquid; a first processing liquid adjustment step, in which, when the liquid replacement step is selected in the selection step, when the processing liquid in the processing tank does not meet a specific condition, at least a portion of the processing liquid in the processing tank is discharged from the processing tank, and the processing tank is supplied with a concentration adjustment step. The processing liquid in the processing tank is adjusted by adding sulfuric acid and hydrogen peroxide; the second processing liquid adjustment step, when the concentration adjustment step is selected in the above selection step, the concentration of the processing liquid in the processing tank is adjusted while the processing liquid in the processing tank is circulated through the pipe connected to the processing tank; and the processing liquid in the processing tank adjusted in the first processing liquid adjustment step or the second processing liquid adjustment step is circulated through the pipe connected to the processing tank, while the substrate is immersed in the processing liquid in the processing tank.
某實施形態中,於取得上述基板資訊之步驟中,上述基板資訊顯示已對上述基板之抗蝕劑進行灰化處理之情形時,於上述選擇之步驟中選擇上述液體更換步驟;於取得上述基板資訊之步驟中,上述基板資訊顯示已對上述基板之抗蝕劑進行離子注入、及已將上述基板進行元件分離之任一者之情形時,於上述選擇之步驟中選擇上述濃度調整步驟。 In a certain implementation form, in the step of obtaining the substrate information, when the substrate information shows that the anti-etching agent of the substrate has been subjected to ashing treatment, the liquid replacement step is selected in the selection step; in the step of obtaining the substrate information, when the substrate information shows that the anti-etching agent of the substrate has been subjected to ion implantation and the substrate has been subjected to device separation, the concentration adjustment step is selected in the selection step.
某實施形態中,於上述第1處理液調整步驟中,於上述處理槽之上述處理液滿足特定條件之情形時,不排出上述處理槽之上述處理液。 In a certain embodiment, in the first treatment liquid adjustment step, when the treatment liquid in the treatment tank meets specific conditions, the treatment liquid in the treatment tank is not discharged.
某實施形態中,上述第1處理液調整步驟包含以下步驟:於浸漬上述基板之前,基於將基板浸漬於上述處理槽之處理液起之經過之時間,設定自上述處理槽排出之上述處理液之量。 In a certain embodiment, the first processing liquid adjustment step includes the following steps: before immersing the substrate, the amount of the processing liquid discharged from the processing tank is set based on the time elapsed since the substrate was immersed in the processing liquid in the processing tank.
某實施形態中,上述第2處理液調整步驟包含以下步驟:基於測定上述處理槽之上述處理液之濃度之濃度感測器之測定結果,調整上述處理液之過氧化氫濃度。 In a certain embodiment, the second treatment liquid adjustment step includes the following steps: adjusting the hydrogen peroxide concentration of the treatment liquid based on the measurement result of the concentration sensor for measuring the concentration of the treatment liquid in the treatment tank.
某實施形態中,上述第2處理液調整步驟包含以下步驟:於將上述基板浸漬於上述處理槽之上述處理液之前,以增加上述處理槽之上述處理液 之過氧化氫濃度之方式對上述處理槽供給過氧化氫水;及於將上述基板浸漬於上述處理槽之上述處理液之後,降低上述處理槽之上述處理液之過氧化氫濃度。 In a certain embodiment, the second treatment liquid adjustment step includes the following steps: supplying hydrogen peroxide to the treatment tank in a manner of increasing the hydrogen peroxide concentration of the treatment liquid in the treatment tank before immersing the substrate in the treatment liquid in the treatment tank; and reducing the hydrogen peroxide concentration of the treatment liquid in the treatment tank after immersing the substrate in the treatment liquid in the treatment tank.
根據本發明之另一態樣,基板處理裝置具備:處理槽,其貯存包含硫酸及過氧化氫水之處理液;循環部,其具有供上述處理槽之上述處理液循環之配管;排液部,其排出上述處理槽之上述處理液;處理液供給部,其對上述處理槽供給硫酸及過氧化氫水;基板保持部,其保持基板,將上述基板浸漬於上述處理槽之上述處理液;及控制部,其控制上述循環部、上述排液部、上述處理液供給部及上述基板保持部。上述控制部於將上述基板浸漬於上述處理槽之上述處理液之前,基於顯示上述基板相關之資訊之基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為調整上述處理液之處理液調整步驟;於選擇上述液體更換步驟之情形時,上述控制部以進行第1處理液調整步驟之方式,控制上述排液部及上述處理液供給部,且上述第1處理液調整步驟於上述處理槽之上述處理液不滿足特定條件時,自上述處理槽排出上述處理槽之上述處理液之至少一部分,使上述處理液供給部對上述處理槽供給上述硫酸及上述過氧化氫水而調整上述處理槽之上述處理液;於選擇上述濃度調整步驟之情形時,上述控制部以進行第2處理液調整步驟之方式,控制上述循環部及上述處理液供給部,且上述第2處理液調整步驟一面使上述處理槽之上述處理液經由上述循環部之上述配管循環,一面調整上述處理液之濃度;上述控制部以一面使於上述第1處理液調整步驟或上述第2處理液調整步驟中調整後之上述處理槽之上述處理液經由上述循環部之上述配管循環,一面將上述基板浸漬於上述 處理槽之上述處理液之方式,控制上述循環部及上述基板保持部。 According to another aspect of the present invention, a substrate processing device comprises: a processing tank storing a processing liquid including sulfuric acid and hydrogen peroxide; a circulation section having a pipe for circulating the processing liquid in the processing tank; a drain section discharging the processing liquid in the processing tank; a processing liquid supply section supplying sulfuric acid and hydrogen peroxide to the processing tank; a substrate holding section holding a substrate and immersing the substrate in the processing liquid in the processing tank; and a control section controlling the circulation section, the drain section, the processing liquid supply section and the substrate holding section. The control unit selects, before immersing the substrate in the treatment liquid in the treatment tank, either a liquid replacement step or a concentration adjustment step as a treatment liquid adjustment step for adjusting the treatment liquid based on substrate information that displays information related to the substrate; when the liquid replacement step is selected, the control unit controls the liquid discharge unit and the treatment liquid supply unit in a manner of performing the first treatment liquid adjustment step, and when the treatment liquid in the treatment tank does not meet a specific condition, the first treatment liquid adjustment step discharges at least a portion of the treatment liquid in the treatment tank from the treatment tank, and causes the treatment liquid supply unit to supply the sulfuric acid and the hydrogen peroxide solution to the treatment tank. Adjust the above-mentioned treatment liquid in the above-mentioned treatment tank; when the above-mentioned concentration adjustment step is selected, the above-mentioned control unit controls the above-mentioned circulation unit and the above-mentioned treatment liquid supply unit in a manner of performing the second treatment liquid adjustment step, and the above-mentioned second treatment liquid adjustment step circulates the above-mentioned treatment liquid in the above-mentioned treatment tank through the above-mentioned piping of the above-mentioned circulation unit while adjusting the concentration of the above-mentioned treatment liquid; the above-mentioned control unit controls the above-mentioned circulation unit and the above-mentioned substrate holding unit in a manner of immersing the above-mentioned substrate in the above-mentioned treatment liquid in the above-mentioned treatment tank while circulating the above-mentioned treatment liquid in the above-mentioned first treatment liquid adjustment step or the above-mentioned second treatment liquid adjustment step through the above-mentioned piping of the above-mentioned circulation unit.
根據本發明,可避免硫酸及過氧化氫水之過量使用。 According to the present invention, excessive use of sulfuric acid and hydrogen peroxide can be avoided.
10:基板處理系統 10: Substrate processing system
20:投入部 20: Investment Department
22:載置台 22: Loading platform
30:收納部 30: Storage Department
40:交接機構 40: Handover organization
50:移出部 50: Removal section
52:載置台 52: Loading platform
100:基板處理裝置 100: Substrate processing device
100A:第1基板處理裝置 100A: 1st substrate processing device
100B:第2基板處理裝置 100B: Second substrate processing device
100C:第3基板處理裝置 100C: The third substrate processing device
110:處理槽 110: Processing tank
112:內槽 112: Inner groove
114:外槽 114: External groove
116:蓋 116: Cover
116a,116b:開門部 116a,116b: Door opening
120:基板保持部 120: Substrate holding part
122:本體板 122: Main body plate
124:保持桿 124: Holding rod
126:升降單元 126: Lifting unit
130:處理液供給部 130: Treatment fluid supply unit
132:硫酸供給部 132: Sulfuric acid supply department
132a:配管 132a: Piping
132b:閥 132b: Valve
134:過氧化氫供給部 134: Hydrogen peroxide supply unit
134a:配管 134a: Piping
134b:閥 134b: Valve
140:循環部 140: Circulation Department
141:配管 141: Piping
142:泵 142: Pump
143:過濾器 143:Filter
144:加熱器 144: Heater
145:調整閥 145: Adjustment valve
146,152,154,155:閥 146,152,154,155: Valve
148:循環液供給管 148: Circulating fluid supply pipe
150:排液部 150: Drainage section
151:排液配管 151: Drain pipe
153:排液配管 153: Drain pipe
162:濃度感測器 162: Concentration sensor
180:控制裝置 180: Control device
182:控制部 182: Control Department
182a:基板資訊取得部 182a: Substrate information acquisition unit
182b:處理液調整步驟選擇部 182b: Treatment liquid adjustment step selection section
182c:處理液資訊取得部 182c: Processing fluid information acquisition department
184:記憶部 184: Memory Department
BU:緩衝單元 BU: Buffer Unit
CTC:第1搬送裝置 CTC: 1st conveying device
L:處理液 L: Treatment liquid
Lhc,Lhp,Lsc,Lsp:線 Lhc,Lhp,Lsc,Lsp:Line
Pc:濃度調整期間 Pc: Concentration adjustment period
Pp:液體更換期間 Pp:Liquid replacement period
S10,S10A,S20,S30,S40,S50A,S50B:步驟 S10, S10A, S20, S30, S40, S50A, S50B: Steps
S102,S104,S106,S108,S110,S112,S114,S116,S118,S120:步驟 S102, S104, S106, S108, S110, S112, S114, S116, S118, S120: Steps
S202,S204,S206,S208,S210,S212,S214,S216,S218,S220:步驟 S202, S204, S206, S208, S210, S212, S214, S216, S218, S220: Steps
Th,Ts,Tsb:目標濃度 Th, Ts, Tsb: target concentration
Thd,Tsd:下限 Thd, Tsd: lower limit
Thu,Tsu:上限 Thu,Tsu: Upper limit
Tob1,Tob2:目標濃度 Tob1, Tob2: Target concentration
W:基板 W: Substrate
WTR:第2搬送裝置 WTR: Second transport device
圖1(a)及(b)係本實施形態之基板處理裝置之模式性立體圖。 Figures 1(a) and (b) are schematic three-dimensional diagrams of the substrate processing device of this embodiment.
圖2係本實施形態之基板處理裝置之模式圖。 Figure 2 is a schematic diagram of the substrate processing device of this embodiment.
圖3係本實施形態之基板處理裝置之模式性方塊圖。 FIG3 is a schematic block diagram of the substrate processing device of this embodiment.
圖4係本實施形態之基板處理方法之流程圖。 FIG4 is a flow chart of the substrate processing method of this embodiment.
圖5(a)~(c)係用以說明本實施形態之基板處理方法中之液體更換步驟之模式圖。 Figure 5 (a) to (c) are schematic diagrams used to illustrate the liquid replacement step in the substrate processing method of this embodiment.
圖6係顯示本實施形態之基板處理方法中,液體更換步驟時之處理槽內之硫酸濃度及過氧化氫濃度之時間變化之圖表。 FIG6 is a graph showing the time variation of the sulfuric acid concentration and hydrogen peroxide concentration in the processing tank during the liquid replacement step in the substrate processing method of this embodiment.
圖7係本實施形態之基板處理方法中選擇液體更換步驟時之流程圖。 FIG. 7 is a flow chart for selecting the liquid replacement step in the substrate processing method of this embodiment.
圖8(a)~(c)係顯示本實施形態之基板處理方法中之濃度調整步驟之模式圖。 Figure 8 (a) to (c) are schematic diagrams showing the concentration adjustment step in the substrate processing method of this embodiment.
圖9係顯示本實施形態之基板處理方法中,濃度調整時之處理槽內之硫酸濃度及過氧化氫濃度之時間變化之圖表。 FIG9 is a graph showing the time variation of sulfuric acid concentration and hydrogen peroxide concentration in the processing tank during concentration adjustment in the substrate processing method of this embodiment.
圖10(a)及(b)係顯示本實施形態之基板處理方法中處理槽內之硫酸濃度及過氧化氫濃度之時間變化之圖表。 Figures 10(a) and (b) are graphs showing the time variation of the sulfuric acid concentration and hydrogen peroxide concentration in the processing tank in the substrate processing method of this embodiment.
圖11係本實施形態之基板處理方法中選擇濃度調整步驟時之流程圖。 FIG11 is a flow chart for selecting the concentration adjustment step in the substrate processing method of this embodiment.
圖12係本實施形態之基板處理方法之流程圖。 FIG12 is a flow chart of the substrate processing method of this embodiment.
圖13係具備本實施形態之基板處理裝置之基板處理系統之模式圖。 FIG. 13 is a schematic diagram of a substrate processing system having a substrate processing device according to this embodiment.
以下,參考圖式,說明本發明之基板處理裝置及基板處理方法之實施形態。另,對圖中相同或相當之部分標注相同之參考符號而不重複說明。另,於本案說明書中,為容易理解發明,有時記載互相正交之X軸、Y軸及Z軸。典型而言,X軸及Y軸與水平方向平行,Z軸與鉛直方向平行。 The following is a description of the implementation of the substrate processing device and substrate processing method of the present invention with reference to the drawings. In addition, the same reference symbols are used for the same or equivalent parts in the drawings without repeated description. In addition, in the description of this case, mutually orthogonal X-axis, Y-axis and Z-axis are sometimes recorded to facilitate the understanding of the invention. Typically, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.
參考圖1,說明本發明之基板處理裝置100之實施形態。圖1(a)及圖1(b)係本實施形態之基板處理裝置100之模式性立體圖。圖1(a)顯示將基板W投入至處理槽110前之基板處理裝置100。圖1(b)顯示將基板W投入至處理槽110後之基板處理裝置100。 Referring to FIG. 1 , an embodiment of the substrate processing apparatus 100 of the present invention is described. FIG. 1( a ) and FIG. 1( b ) are schematic three-dimensional diagrams of the substrate processing apparatus 100 of the present embodiment. FIG. 1( a ) shows the substrate processing apparatus 100 before the substrate W is put into the processing tank 110. FIG. 1( b ) shows the substrate processing apparatus 100 after the substrate W is put into the processing tank 110.
基板處理裝置100處理基板W。基板處理裝置100以對基板W進行蝕刻、表面處理、氧化處理、特性賦予、處理膜形成、去除及洗淨膜之至少一部分中之至少1者之方式,處理基板W。 The substrate processing device 100 processes the substrate W. The substrate processing device 100 processes the substrate W by performing at least one of etching, surface treatment, oxidation treatment, property imparting, film formation, removal, and cleaning of at least a portion of the film.
基板W係較薄之板狀。典型而言,基板W係較薄之大致圓板狀。基板W例如包含半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(Field Emission Display:FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板及太陽能電池用基板等。 The substrate W is in the shape of a relatively thin plate. Typically, the substrate W is in the shape of a relatively thin, roughly circular plate. The substrate W includes, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission displays (FED), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.
基板處理裝置100係批量式基板處理裝置。基板處理裝置100一併處理複數塊基板W。典型而言,基板處理裝置100以組單位處理複數塊基板W。例如,1組包含25片基板W。 The substrate processing device 100 is a batch type substrate processing device. The substrate processing device 100 processes a plurality of substrates W at a time. Typically, the substrate processing device 100 processes a plurality of substrates W in groups. For example, one group includes 25 substrates W.
如圖1(a)所示,基板處理裝置100具備處理槽110、基板保持部120、及處理液供給部130。處理槽110貯存用以處理基板W之處理液。處理液係包含硫酸及過氧化氫水之混合液。處理液供給部130對處理槽110供給處理液。例如,處理液供給部130對處理槽110分別供給硫酸及過氧化氫水。一例中,硫酸及過氧化氫水於處理槽110中混合而產生處理液。但,自處理液供給部130供給之硫酸及過氧化氫水亦可於到達處理槽110之前混合而產生處理液。 As shown in FIG. 1( a ), the substrate processing device 100 includes a processing tank 110 , a substrate holding portion 120 , and a processing liquid supply portion 130 . The processing tank 110 stores a processing liquid for processing a substrate W. The processing liquid is a mixed liquid including sulfuric acid and hydrogen peroxide. The processing liquid supply portion 130 supplies the processing liquid to the processing tank 110 . For example, the processing liquid supply portion 130 supplies sulfuric acid and hydrogen peroxide to the processing tank 110 , respectively. In one example, sulfuric acid and hydrogen peroxide are mixed in the processing tank 110 to produce a processing liquid. However, the sulfuric acid and hydrogen peroxide supplied from the processing liquid supply portion 130 may also be mixed before reaching the processing tank 110 to produce a processing liquid.
基板保持部120保持基板W。由基板保持部120保持之基板W之主表面之法線方向與Y方向平行。複數塊基板W沿Y方向排列成一行。複數塊基板W與水平方向大致平行排列。又,複數塊基板W各者之法線於Y方向延伸,複數塊基板W各者與X方向及Z方向大致平行地擴展。 The substrate holding part 120 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding part 120 is parallel to the Y direction. The plurality of substrates W are arranged in a row along the Y direction. The plurality of substrates W are arranged approximately parallel to the horizontal direction. In addition, the normal of each of the plurality of substrates W extends in the Y direction, and each of the plurality of substrates W extends approximately parallel to the X direction and the Z direction.
典型而言,基板保持部120集中保持複數塊基板W。此處,基板保持部120保持沿Y方向排列成一行之基板W。基板保持部120於保持有基板W之狀態下使基板W移動。例如,基板保持部120於保持有基板W之狀態下沿鉛直方向朝鉛直上方或鉛直下方移動。 Typically, the substrate holding part 120 collectively holds a plurality of substrates W. Here, the substrate holding part 120 holds the substrates W arranged in a row along the Y direction. The substrate holding part 120 moves the substrates W while holding the substrates W. For example, the substrate holding part 120 moves vertically upward or vertically downward along the vertical direction while holding the substrates W.
具體而言,基板保持部120包含升降部。基板保持部120於保持有複數塊基板W之狀態下朝鉛直上方或鉛直下方移動。藉由基板保持部120朝鉛直下方移動,將由基板保持部120保持之複數塊基板W浸漬於貯存在處理槽110之處理液L中。 Specifically, the substrate holding part 120 includes a lifting part. The substrate holding part 120 moves directly upward or downward while holding a plurality of substrates W. By moving the substrate holding part 120 directly downward, the plurality of substrates W held by the substrate holding part 120 are immersed in the processing liquid L stored in the processing tank 110.
於圖1(a)中,基板保持部120位於處理槽110之上方。基板保持部120於保持有複數塊基板W之狀態下朝鉛直下方(Z方向)下降。藉此,將複數塊基板W投入至處理槽110中。 In FIG. 1(a), the substrate holding portion 120 is located above the processing tank 110. The substrate holding portion 120 is lowered directly downward (in the Z direction) while holding a plurality of substrates W. In this way, the plurality of substrates W are placed into the processing tank 110.
如圖1(b)所示,當基板保持部120下降至處理槽110時,複數塊基板W浸漬於處理槽110內之處理液中。基板保持部120將空開特定間隔而整齊排列之複數塊基板W浸漬於貯存在處理槽110之處理液中。 As shown in FIG. 1(b), when the substrate holding part 120 descends to the processing tank 110, a plurality of substrates W are immersed in the processing liquid in the processing tank 110. The substrate holding part 120 immerses a plurality of substrates W neatly arranged at specific intervals in the processing liquid stored in the processing tank 110.
處理槽110具有雙重槽構造。處理槽110具有內槽112及外槽114。外槽114包圍內槽112。內槽112及外槽114皆具有向上打開之上部開口。 The processing tank 110 has a double tank structure. The processing tank 110 has an inner tank 112 and an outer tank 114. The outer tank 114 surrounds the inner tank 112. Both the inner tank 112 and the outer tank 114 have an upper opening that opens upward.
內槽112及外槽114各者貯存處理液。對內槽112投入複數塊基板W。詳細而言,將保持於基板保持部120之複數塊基板W投入至內槽112。藉由將複數塊基板W投入至內槽112,而將之浸漬於內槽112之處理液中。 The inner tank 112 and the outer tank 114 each store a processing liquid. A plurality of substrates W are placed in the inner tank 112. Specifically, the plurality of substrates W held in the substrate holding portion 120 are placed in the inner tank 112. By placing the plurality of substrates W in the inner tank 112, they are immersed in the processing liquid in the inner tank 112.
基板保持部120包含本體板122及保持桿124。本體板122係於鉛直方向(Z方向)延伸之板。保持桿124自本體板122之一主表面朝水平方向(X方向)延伸。圖1(a)及圖1(b)中,3根保持桿124自本體板122之一主表面朝水 平方向延伸。複數塊基板W於空開特定間隔整齊排列之狀態下,由複數根保持桿124抵接各基板W之下緣,而以立起姿勢(鉛直姿勢)受保持。 The substrate holding portion 120 includes a body plate 122 and a holding rod 124. The body plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends from one main surface of the body plate 122 in the horizontal direction (X direction). In FIG. 1(a) and FIG. 1(b), three holding rods 124 extend from one main surface of the body plate 122 in the horizontal direction. A plurality of substrates W are arranged neatly at specific intervals, and are held in an upright position (vertical position) by a plurality of holding rods 124 abutting against the lower edge of each substrate W.
基板保持部120可進而包含升降單元126。升降單元126使本體板122於保持於保持桿124之複數塊基板W位於處理槽110內之下方位置(圖1(b)所示之位置)、與保持於保持桿124之複數塊基板W位於處理槽110之上方之上方位置(圖1(a)所示之位置)之間升降。因此,藉由利用升降單元126將本體板122移動至下方位置,而將保持於保持桿124之複數塊基板W浸漬於處理液中。 The substrate holding portion 120 may further include a lifting unit 126. The lifting unit 126 lifts the body plate 122 between a lower position (the position shown in FIG. 1(b)) where the plurality of substrates W held on the holding rod 124 are located in the processing tank 110 and an upper position (the position shown in FIG. 1(a)) where the plurality of substrates W held on the holding rod 124 are located above the processing tank 110. Therefore, by using the lifting unit 126 to move the body plate 122 to the lower position, the plurality of substrates W held on the holding rod 124 are immersed in the processing liquid.
複數塊基板W由複數根保持桿124保持。詳細而言,藉由各基板W之下緣抵接複數根保持桿124,而由複數根保持桿124將複數塊基板W以立起姿勢(鉛直姿勢)保持。更具體而言,由基板保持部120保持之複數塊基板W沿Y方向空開間隔整齊排列。因此,複數塊基板W沿Y方向排列成一行。又,複數塊基板W各者以與XZ平面大致平行之姿勢保持於基板保持部120。 The plurality of substrates W are held by a plurality of holding rods 124. Specifically, the plurality of substrates W are held in an upright position (vertical position) by the plurality of holding rods 124 by abutting the lower edge of each substrate W against the plurality of holding rods 124. More specifically, the plurality of substrates W held by the substrate holding portion 120 are neatly arranged at intervals along the Y direction. Therefore, the plurality of substrates W are arranged in a row along the Y direction. In addition, each of the plurality of substrates W is held in the substrate holding portion 120 in a position substantially parallel to the XZ plane.
升降單元126使本體板122及保持桿124升降。藉由升降單元126使本體板122及保持桿124升降,本體板122及保持桿124於保持有複數塊基板W之狀態下朝鉛直上方或鉛直下方移動。升降單元126具有驅動源及升降機構,藉由驅動源驅動升降機構,使本體板122及保持桿124上升及下降。驅動源例如包含馬達。升降機構例如包含齒條/小齒輪機構或滾珠螺桿。 The lifting unit 126 lifts and lowers the main body plate 122 and the holding rod 124. The lifting unit 126 lifts and lowers the main body plate 122 and the holding rod 124, and the main body plate 122 and the holding rod 124 move directly upward or downward while holding a plurality of substrates W. The lifting unit 126 has a driving source and a lifting mechanism, and the driving source drives the lifting mechanism to raise and lower the main body plate 122 and the holding rod 124. The driving source includes, for example, a motor. The lifting mechanism includes, for example, a gear/pinion mechanism or a ball screw.
更具體而言,升降單元126使基板保持部120於處理位置(圖1(b)所示之位置)與退避位置(圖1(a)所示之位置)之間升降。如圖1(b)所示,當基板保持部120於保持有複數塊基板W之狀態下朝鉛直下方(Z方向)下降而移動至處理位置時,複數塊基板W被投入至內槽112。詳細而言,保持於基板保持部120之複數塊基板W移動至內槽112內。其結果,將複數塊基板W浸漬於內槽112內之處理液中,由處理液進行處理。另一方面,如圖1(a)所示,當基板保持部120移動至退避位置時,保持於基板保持部120之複數塊基板W移動至內槽112之上方,自處理液提起。 More specifically, the lifting unit 126 lifts the substrate holding portion 120 between the processing position (the position shown in FIG. 1(b)) and the retreat position (the position shown in FIG. 1(a)). As shown in FIG. 1(b), when the substrate holding portion 120 moves to the processing position by descending directly downward (in the Z direction) while holding a plurality of substrates W, the plurality of substrates W are put into the inner tank 112. Specifically, the plurality of substrates W held by the substrate holding portion 120 are moved into the inner tank 112. As a result, the plurality of substrates W are immersed in the processing liquid in the inner tank 112 and processed by the processing liquid. On the other hand, as shown in FIG. 1(a), when the substrate holding portion 120 moves to the retracted position, the plurality of substrates W held in the substrate holding portion 120 move to the top of the inner tank 112 and are lifted from the processing liquid.
接著,參考圖1及圖2,說明本實施形態之基板處理裝置100。圖2係本實施形態之基板處理裝置100之模式圖。 Next, referring to FIG. 1 and FIG. 2 , the substrate processing device 100 of the present embodiment is described. FIG. 2 is a schematic diagram of the substrate processing device 100 of the present embodiment.
如圖2所示,基板處理裝置100具備處理槽110、基板保持部120、處理液供給部130、循環部140、排液部150、及控制裝置180。控制裝置180控制基板保持部120、處理液供給部130、循環部140及排液部150。 As shown in FIG. 2 , the substrate processing device 100 includes a processing tank 110, a substrate holding portion 120, a processing liquid supply portion 130, a circulation portion 140, a liquid discharge portion 150, and a control device 180. The control device 180 controls the substrate holding portion 120, the processing liquid supply portion 130, the circulation portion 140, and the liquid discharge portion 150.
處理槽110貯存處理液L。基板保持部120保持基板W。基板保持部120包含升降部。可藉由基板保持部120將複數塊基板W一併浸漬於貯存在處理槽110之處理液L中。 The processing tank 110 stores the processing liquid L. The substrate holding part 120 holds the substrate W. The substrate holding part 120 includes a lifting part. The substrate holding part 120 can be used to immerse a plurality of substrates W in the processing liquid L stored in the processing tank 110 at the same time.
處理液供給部130對處理槽110供給處理液。處理液供給部130具有硫酸供給部132、及過氧化氫供給部134。硫酸供給部132對處理槽110供給 硫酸。過氧化氫供給部134對處理槽110供給過氧化氫水。 The treatment liquid supply unit 130 supplies the treatment liquid to the treatment tank 110. The treatment liquid supply unit 130 has a sulfuric acid supply unit 132 and a hydrogen peroxide supply unit 134. The sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110. The hydrogen peroxide supply unit 134 supplies hydrogen peroxide water to the treatment tank 110.
如上所述,過氧化氫隨著時間經過分解而產生水。因此,為將處理槽110之處理液之濃度維持固定,硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水。典型而言,自硫酸供給部132供給之每單位時間之硫酸之量較自過氧化氫供給部134供給之每單位時間之過氧化氫水之量多。例如,硫酸之供給量(體積)與過氧化氫水之供給量(體積)之比率為5:1~10:1。 As described above, hydrogen peroxide decomposes over time to produce water. Therefore, in order to maintain a constant concentration of the treatment solution in the treatment tank 110, the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide solution to the treatment tank 110. Typically, the amount of sulfuric acid supplied per unit time from the sulfuric acid supply unit 132 is greater than the amount of hydrogen peroxide solution supplied per unit time from the hydrogen peroxide supply unit 134. For example, the ratio of the supply amount (volume) of sulfuric acid to the supply amount (volume) of hydrogen peroxide solution is 5:1~10:1.
循環部140使貯存於處理槽110之處理液L循環。於循環部140使處理槽110之處理液L循環時,將處理液加熱至特定溫度。又,可於循環部140使處理槽110之處理液L循環時,對處理液進行過濾而自處理液去除雜質。 The circulation unit 140 circulates the processing liquid L stored in the processing tank 110. When the circulation unit 140 circulates the processing liquid L in the processing tank 110, the processing liquid is heated to a specific temperature. In addition, when the circulation unit 140 circulates the processing liquid L in the processing tank 110, the processing liquid can be filtered to remove impurities from the processing liquid.
排液部150將貯存於處理槽110之處理液L排出。可藉由排液部150,排出處理槽110之處理液。又,排液部150將貯存於處理槽110之處理液L排出,且硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水,藉此,可將貯存於處理槽110之處理液L更換為新的處理液。 The drain section 150 discharges the treatment liquid L stored in the treatment tank 110. The treatment liquid in the treatment tank 110 can be discharged through the drain section 150. In addition, the drain section 150 discharges the treatment liquid L stored in the treatment tank 110, and the sulfuric acid supply section 132 and the hydrogen peroxide supply section 134 supply sulfuric acid and hydrogen peroxide to the treatment tank 110, thereby replacing the treatment liquid L stored in the treatment tank 110 with a new treatment liquid.
如上所述,處理槽110貯存處理液L。處理液L係硫酸及過氧化氫水之混合液。處理液L中,硫酸之濃度(質量濃度)為80%以上且90%以下,過氧化氫濃度(質量濃度)為0.8%以上且2.0%以下。 As described above, the treatment tank 110 stores the treatment liquid L. The treatment liquid L is a mixed liquid of sulfuric acid and hydrogen peroxide. In the treatment liquid L, the concentration (mass concentration) of sulfuric acid is greater than 80% and less than 90%, and the concentration (mass concentration) of hydrogen peroxide is greater than 0.8% and less than 2.0%.
此處,處理槽110為雙重槽構造。處理槽110具有內槽112及外槽114。內槽112及外槽114各自具有向上打開之上部開口。內槽112構成為可貯存處理液L,且收納複數塊基板W。外槽114設置於內槽112之上部開口之外側面。外槽114之上緣之高度較內槽112之上緣之高度高。 Here, the processing tank 110 is a double tank structure. The processing tank 110 has an inner tank 112 and an outer tank 114. The inner tank 112 and the outer tank 114 each have an upper opening that opens upward. The inner tank 112 is configured to store the processing liquid L and accommodate a plurality of substrates W. The outer tank 114 is disposed on the outer side of the upper opening of the inner tank 112. The height of the upper edge of the outer tank 114 is higher than the height of the upper edge of the inner tank 112.
處理槽110進而具有蓋116。蓋116可相對於內槽112之上部開口開閉。藉由將蓋116關閉,蓋116可將內槽112之上部開口封閉。 The processing tank 110 further has a cover 116. The cover 116 can be opened and closed relative to the upper opening of the inner tank 112. By closing the cover 116, the cover 116 can seal the upper opening of the inner tank 112.
蓋116具有開門部116a、及開門部116b。開門部116a位於內槽112之上部開口中之X方向之一側。開門部116a配置於內槽112之上緣附近,且可相對於內槽112之上部開口開閉。開門部116b位於內槽112之上部開口中之X方向之另一側。開門部116b配置於內槽112之上緣附近,可相對於內槽112之上部開口開閉。藉由將開門部116a及開門部116b關閉而覆蓋內槽112之上部開口,可將處理槽110之內槽112封閉。 The cover 116 has an opening portion 116a and an opening portion 116b. The opening portion 116a is located on one side of the upper opening of the inner tank 112 in the X direction. The opening portion 116a is arranged near the upper edge of the inner tank 112 and can be opened and closed relative to the upper opening of the inner tank 112. The opening portion 116b is located on the other side of the upper opening of the inner tank 112 in the X direction. The opening portion 116b is arranged near the upper edge of the inner tank 112 and can be opened and closed relative to the upper opening of the inner tank 112. By closing the opening portion 116a and the opening portion 116b to cover the upper opening of the inner tank 112, the inner tank 112 of the processing tank 110 can be closed.
基板保持部120保持基板W。基板保持部120於保持有基板W之狀態下朝鉛直上方或鉛直下方移動。藉由基板保持部120朝鉛直下方移動,由基板保持部120保持之基板W被浸漬於貯存於內槽112之處理液L中。 The substrate holding part 120 holds the substrate W. The substrate holding part 120 moves directly upward or downward while holding the substrate W. As the substrate holding part 120 moves directly downward, the substrate W held by the substrate holding part 120 is immersed in the processing liquid L stored in the inner tank 112.
基板保持部120包含本體板122、及保持桿124。本體板122係於鉛直方向(Z方向)延伸之板。保持桿124自本體板122之一主表面朝水平方向(X方向)延伸。此處,3根保持桿124自本體板122之一主表面朝Y方向延伸。於沿著紙面之近前方向排列有複數塊基板W之狀態下,由複數根保持桿 124抵接各基板W之下緣,而將複數塊基板W以立起姿勢(鉛直姿勢)保持。 The substrate holding portion 120 includes a body plate 122 and a holding rod 124. The body plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends from one main surface of the body plate 122 in the horizontal direction (X direction). Here, three holding rods 124 extend from one main surface of the body plate 122 in the Y direction. When a plurality of substrates W are arranged in the near-front direction of the paper surface, a plurality of holding rods 124 abut against the lower edge of each substrate W, and the plurality of substrates W are held in an upright position (vertical position).
基板保持部120可進而包含升降單元126。升降單元126使本體板122於保持於基板保持部120之基板W位於內槽112內之處理位置(圖2所示之位置)、與保持於基板保持部120之基板W位於內槽112之上方之退避位置(未圖示)之間升降。因此,藉由利用升降單元126使本體板122移動至處理位置,而將保持於保持桿124之複數塊基板W浸漬於處理液中。藉此,對基板W實施處理。 The substrate holding part 120 may further include a lifting unit 126. The lifting unit 126 lifts the main plate 122 between a processing position (the position shown in FIG. 2 ) where the substrate W held in the substrate holding part 120 is located in the inner tank 112 and a retreat position (not shown) where the substrate W held in the substrate holding part 120 is located above the inner tank 112. Therefore, by using the lifting unit 126 to move the main plate 122 to the processing position, the plurality of substrates W held in the holding rod 124 are immersed in the processing liquid. In this way, the substrate W is processed.
硫酸供給部132包含配管132a、及閥132b。自配管132a之一端向處理槽110噴出硫酸。配管132a連接於硫酸供給源。配管132a中配置閥132b。藉由閥132b,可控制對處理槽110供給硫酸。藉由控制裝置180之控制而打開閥132b時,通過配管132a之硫酸供給至處理槽110。處理槽110中,硫酸與處理槽110之處理液混合。 The sulfuric acid supply unit 132 includes a pipe 132a and a valve 132b. Sulfuric acid is sprayed from one end of the pipe 132a to the treatment tank 110. The pipe 132a is connected to a sulfuric acid supply source. A valve 132b is arranged in the pipe 132a. The supply of sulfuric acid to the treatment tank 110 can be controlled by the valve 132b. When the valve 132b is opened by the control of the control device 180, the sulfuric acid is supplied to the treatment tank 110 through the pipe 132a. In the treatment tank 110, the sulfuric acid is mixed with the treatment liquid of the treatment tank 110.
例如,將自配管132a噴出之硫酸供給至內槽112。當處理液自內槽112之上緣溢出時,溢出之處理液由外槽114接住並回收。此處,硫酸噴出至內槽112。可於內槽112,配置將硫酸自硫酸供給部132供給至內槽112之配管132a之一端。 For example, sulfuric acid sprayed from the pipe 132a is supplied to the inner tank 112. When the treatment liquid overflows from the upper edge of the inner tank 112, the overflowed treatment liquid is received and recovered by the outer tank 114. Here, sulfuric acid is sprayed into the inner tank 112. One end of the pipe 132a that supplies sulfuric acid from the sulfuric acid supply unit 132 to the inner tank 112 can be arranged in the inner tank 112.
過氧化氫供給部134包含配管134a、及閥134b。自配管134a之一端,向處理槽110噴出過氧化氫水。配管134a連接於過氧化氫水供給源。 配管134a中配置閥134b。藉由閥134b,可控制對處理槽110供給過氧化氫水。藉由控制裝置180之控制打開閥134b時,將通過配管134a之過氧化氫水供給至處理槽110。處理槽110中,過氧化氫水與處理槽110之處理液混合。 The hydrogen peroxide supply unit 134 includes a pipe 134a and a valve 134b. Hydrogen peroxide is sprayed from one end of the pipe 134a to the treatment tank 110. The pipe 134a is connected to a hydrogen peroxide supply source. A valve 134b is arranged in the pipe 134a. The supply of hydrogen peroxide to the treatment tank 110 can be controlled by the valve 134b. When the valve 134b is opened by the control of the control device 180, the hydrogen peroxide passing through the pipe 134a is supplied to the treatment tank 110. In the treatment tank 110, the hydrogen peroxide is mixed with the treatment liquid of the treatment tank 110.
例如,自配管134a噴出之過氧化氫水供給至內槽112。當處理液自內槽112之上緣溢出時,溢出之處理液由外槽114接住並回收。此處,過氧化氫水噴出至內槽112。可於內槽112,配置將過氧化氫水自過氧化氫供給部134供給至內槽112之配管134a之一端。 For example, the hydrogen peroxide sprayed from the pipe 134a is supplied to the inner tank 112. When the treatment liquid overflows from the upper edge of the inner tank 112, the overflowed treatment liquid is received by the outer tank 114 and recovered. Here, the hydrogen peroxide is sprayed into the inner tank 112. One end of the pipe 134a that supplies the hydrogen peroxide from the hydrogen peroxide supply part 134 to the inner tank 112 can be arranged in the inner tank 112.
循環部140包含配管141、泵142、過濾器143、加熱器144、調整閥145、閥146及循環液供給管148。泵142、過濾器143、加熱器144、調整閥145及閥146依序自配管141之上游朝向下游配置。 The circulation section 140 includes a pipe 141, a pump 142, a filter 143, a heater 144, a regulating valve 145, a valve 146, and a circulating fluid supply pipe 148. The pump 142, the filter 143, the heater 144, the regulating valve 145, and the valve 146 are arranged in order from the upstream to the downstream of the pipe 141.
配管141將自處理槽110排出之處理液再次引導至處理槽110。詳細而言,配管141之上游端位於外槽114,配管141之下游端位於內槽112。配管141之下游端與位於內槽112之循環液供給管148連接。 The pipe 141 guides the treatment liquid discharged from the treatment tank 110 back to the treatment tank 110. Specifically, the upstream end of the pipe 141 is located in the outer tank 114, and the downstream end of the pipe 141 is located in the inner tank 112. The downstream end of the pipe 141 is connected to the circulating liquid supply pipe 148 located in the inner tank 112.
泵142將處理液自配管141輸送至循環液供給管148。過濾器143過濾流過配管141之處理液。過濾器143過濾並去除流過配管141之處理液中之微粒等異物。 The pump 142 transports the treatment liquid from the pipe 141 to the circulating liquid supply pipe 148. The filter 143 filters the treatment liquid flowing through the pipe 141. The filter 143 filters and removes foreign matter such as particles in the treatment liquid flowing through the pipe 141.
加熱器144將流過配管141之處理液加熱。藉由加熱器144調整處理液 之溫度。加熱器144將流過配管141之處理液加熱,而調整為處理溫度(例如,約100℃~120℃)。加熱器144亦可將處理液加熱且測定處理液之溫度。該情形時,加熱器144具有加熱部且具有溫度測定部。 The heater 144 heats the processing liquid flowing through the pipe 141. The temperature of the processing liquid is adjusted by the heater 144. The heater 144 heats the processing liquid flowing through the pipe 141 and adjusts it to a processing temperature (for example, about 100°C to 120°C). The heater 144 can also heat the processing liquid and measure the temperature of the processing liquid. In this case, the heater 144 has a heating part and a temperature measuring part.
調整閥145調節配管141之開度,而調整供給至循環液供給管148之處理液之流量。調整閥145調整處理液之流量。調整閥145包含於內部設置有閥座之閥主體(未圖示)、將閥座開閉之閥體、及使閥體於開位置與閉位置之間移動之致動器(未圖示)。關於其他調整閥亦同樣。閥146將配管141開閉。另,亦可省略調整閥145。該情形時,藉由控制泵142之控制調整供給至循環液供給管148之處理液之流量。 The adjusting valve 145 adjusts the opening of the piping 141 to adjust the flow rate of the treatment fluid supplied to the circulating fluid supply pipe 148. The adjusting valve 145 adjusts the flow rate of the treatment fluid. The adjusting valve 145 includes a valve body (not shown) having a valve seat disposed therein, a valve body that opens and closes the valve seat, and an actuator (not shown) that moves the valve body between an open position and a closed position. The same is true for other adjusting valves. The valve 146 opens and closes the piping 141. In addition, the adjusting valve 145 may be omitted. In this case, the flow rate of the treatment fluid supplied to the circulating fluid supply pipe 148 is adjusted by controlling the control pump 142.
循環液供給管148配置於內槽112。此處,循環液供給管148配置於處理槽110之內槽112之底部。循環液供給管148配置於貯存於內槽112之處理液L內。循環液供給管148對內槽112供給循環後之處理液。 The circulating liquid supply pipe 148 is arranged in the inner tank 112. Here, the circulating liquid supply pipe 148 is arranged at the bottom of the inner tank 112 of the treatment tank 110. The circulating liquid supply pipe 148 is arranged in the treatment liquid L stored in the inner tank 112. The circulating liquid supply pipe 148 supplies the inner tank 112 with the circulated treatment liquid.
排液部150具有排液配管151、閥152、排液配管153、閥154、及閥155。藉由排液配管151及閥152,排出內槽112之處理液。藉由排液配管153、閥154及閥155,排出外槽114之處理液。 The drain section 150 has a drain pipe 151, a valve 152, a drain pipe 153, a valve 154, and a valve 155. The processing liquid in the inner tank 112 is discharged through the drain pipe 151 and the valve 152. The processing liquid in the outer tank 114 is discharged through the drain pipe 153, the valve 154, and the valve 155.
於內槽112之底壁,連接排液配管151。排液配管151中配置閥152。閥152藉由控制裝置180進行開閉。將閥152打開,藉此,貯存於內槽112內之處理液通過排液配管151排出至外部。排出之處理液輸送至排液處理裝置(未圖示)進行處理。 The bottom wall of the inner tank 112 is connected to the drain pipe 151. A valve 152 is arranged in the drain pipe 151. The valve 152 is opened and closed by the control device 180. The valve 152 is opened, and thereby the treatment liquid stored in the inner tank 112 is discharged to the outside through the drain pipe 151. The discharged treatment liquid is transported to the drainage treatment device (not shown) for treatment.
配管141中連接排液配管153。此處,排液配管153於較泵142更下游處與配管141連接。配管141中,於與排液配管153之連接部之下游配置閥154。閥155位於排液配管153。藉由打開閥154且關閉閥155,處理槽110之處理液可通過配管141返回至處理槽110,可將處理槽110之處理液循環。又,藉由關閉閥154且打開閥155,處理槽110之處理液可通過配管141及排液配管153排出。 The drain pipe 153 is connected to the pipe 141. Here, the drain pipe 153 is connected to the pipe 141 at a position downstream of the pump 142. In the pipe 141, a valve 154 is arranged downstream of the connection with the drain pipe 153. The valve 155 is located in the drain pipe 153. By opening the valve 154 and closing the valve 155, the treatment liquid in the treatment tank 110 can be returned to the treatment tank 110 through the pipe 141, and the treatment liquid in the treatment tank 110 can be circulated. In addition, by closing the valve 154 and opening the valve 155, the treatment liquid in the treatment tank 110 can be discharged through the pipe 141 and the drain pipe 153.
另,圖2中,為避免圖式過於複雜,顯示出1個調整閥145及1個閥146,但調整閥145及閥146之至少一者亦可設置複數個。 In addition, in FIG. 2, to avoid making the diagram too complicated, one adjusting valve 145 and one valve 146 are shown, but at least one of the adjusting valve 145 and the valve 146 may be provided in plural.
控制裝置180例如使用微型電腦構成。控制裝置180具有中央處理運算器(Central Processing Unit:CPU)等運算單元、固定記憶體器件、硬碟等記憶單元、及輸入輸出單元。記憶單元中記憶有運算單元執行之程式。 The control device 180 is constructed using a microcomputer, for example. The control device 180 has a computing unit such as a central processing unit (CPU), a fixed memory device, a memory unit such as a hard disk, and an input/output unit. The memory unit stores a program executed by the computing unit.
接著,參考圖1~圖3,說明本發明之基板處理裝置100之實施形態。圖3係本實施形態之基板處理裝置100之模式性方塊圖。 Next, referring to FIG. 1 to FIG. 3 , the implementation form of the substrate processing device 100 of the present invention is described. FIG. 3 is a schematic block diagram of the substrate processing device 100 of the present implementation form.
如圖3所示,控制裝置180具備控制部182及記憶部184。控制部182控制基板處理裝置100之各部之動作。 As shown in FIG. 3 , the control device 180 includes a control unit 182 and a memory unit 184. The control unit 182 controls the operation of each unit of the substrate processing device 100.
控制部182包含處理器。處理器例如具有中央處理運算器(Central Processing Unit:CPU)。或,處理器亦可具有泛用運算器。 The control unit 182 includes a processor. The processor, for example, has a central processing unit (CPU). Alternatively, the processor may also have a general-purpose processor.
記憶部184記憶資料及電腦程式。記憶部184包含主記憶裝置及輔助記憶裝置。主記憶裝置例如為半導體記憶體。輔助記憶裝置例如為半導體記憶體及/或硬碟。記憶部184亦可包含可移除媒體。控制部182之處理器執行記憶部184所記憶之電腦程式,而執行基板處理方法。 The memory unit 184 stores data and computer programs. The memory unit 184 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk. The memory unit 184 may also include a removable medium. The processor of the control unit 182 executes the computer program stored in the memory unit 184 to execute the substrate processing method.
控制裝置180依照預設之程式,控制基板保持部120、硫酸供給部132、過氧化氫供給部134、循環部140及排液部150。詳細而言,控制裝置180控制升降單元126、泵142、過濾器143、加熱器144等之動作。又,控制裝置180控制閥132b、閥134b、閥146、閥152、閥154、閥155之開閉動作。再者,控制裝置180控制調整閥145之開度調整動作。 The control device 180 controls the substrate holding part 120, the sulfuric acid supply part 132, the hydrogen peroxide supply part 134, the circulation part 140 and the drainage part 150 according to the preset program. In detail, the control device 180 controls the actions of the lifting unit 126, the pump 142, the filter 143, the heater 144, etc. In addition, the control device 180 controls the opening and closing actions of the valve 132b, the valve 134b, the valve 146, the valve 152, the valve 154, and the valve 155. Furthermore, the control device 180 controls the opening adjustment action of the adjustment valve 145.
基板處理裝置100具有濃度感測器162。濃度感測器162測定處理槽110內之處理液中之硫酸濃度及過氧化氫濃度。 The substrate processing apparatus 100 has a concentration sensor 162. The concentration sensor 162 measures the concentration of sulfuric acid and hydrogen peroxide in the processing liquid in the processing tank 110.
例如,濃度感測器162安裝於處理槽110。濃度感測器162測量表示處理槽110所貯存之處理液之比重之值。濃度感測器162測量處理槽110之背壓。 For example, the concentration sensor 162 is installed in the processing tank 110. The concentration sensor 162 measures a value representing the specific gravity of the processing liquid stored in the processing tank 110. The concentration sensor 162 measures the back pressure of the processing tank 110.
例如,濃度感測器162之前端配置於距處理槽110之處理液面特定深度之位置。於濃度感測器162中,對濃度感測器162之前端供給氣體,於處理槽110之處理液內形成氣泡。藉此,檢測貯存於處理槽110之處理液 之液壓,作為配置於距處理槽110之液面特定深度之位置之濃度感測器162之前端部之氣壓。作為氣體,典型而言使用氮氣。藉由預先測定氣壓與處理液之硫酸濃度、過氧化氫濃度之關係,事先製作表示氣壓與處理液之關係之對照表,可根據由氣體形成氣泡之氣壓測量處理液之比重。 For example, the front end of the concentration sensor 162 is arranged at a position at a specific depth from the treatment liquid surface of the treatment tank 110. In the concentration sensor 162, gas is supplied to the front end of the concentration sensor 162 to form bubbles in the treatment liquid of the treatment tank 110. In this way, the liquid pressure of the treatment liquid stored in the treatment tank 110 is detected as the gas pressure of the front end of the concentration sensor 162 arranged at a specific depth from the liquid surface of the treatment tank 110. As the gas, nitrogen is typically used. By pre-measuring the relationship between the gas pressure and the sulfuric acid concentration and hydrogen peroxide concentration of the treatment liquid, a comparison table showing the relationship between the gas pressure and the treatment liquid is prepared in advance, and the specific gravity of the treatment liquid can be measured based on the gas pressure of the bubbles formed by the gas.
又,控制部182藉由執行記憶於記憶部184之電腦程式,而作為基板資訊取得部182a及處理液調整步驟選擇部182b發揮功能。因此,控制部182包含基板資訊取得部182a及處理液調整步驟選擇部182b。 Furthermore, the control unit 182 functions as a substrate information acquisition unit 182a and a processing liquid adjustment step selection unit 182b by executing a computer program stored in the memory unit 184. Therefore, the control unit 182 includes the substrate information acquisition unit 182a and the processing liquid adjustment step selection unit 182b.
基板資訊取得部182a於基板處理裝置100處理基板W之前,取得表示基板W相關之資訊之基板資訊。基板資訊亦可顯示於將基板W搬入至基板處理裝置100之前進行之處理。 The substrate information acquisition unit 182a acquires substrate information indicating information related to the substrate W before the substrate processing apparatus 100 processes the substrate W. The substrate information may also be displayed on the processing performed before the substrate W is moved into the substrate processing apparatus 100.
處理液調整步驟選擇部182b選擇進行液體更換步驟及濃度調整步驟之哪一者,作為調整處理槽110之處理液之處理液調整步驟。處理液調整步驟選擇部182b基於基板資訊,選擇液體更換步驟及濃度調整步驟之任一者。稍後敘述液體更換步驟及濃度調整步驟。 The processing liquid adjustment step selection unit 182b selects which of the liquid replacement step and the concentration adjustment step is to be performed as the processing liquid adjustment step for adjusting the processing liquid in the processing tank 110. The processing liquid adjustment step selection unit 182b selects either the liquid replacement step or the concentration adjustment step based on the substrate information. The liquid replacement step and the concentration adjustment step will be described later.
再者,控制部182藉由執行記憶於記憶部184之電腦程式,而作為處理液資訊取得部182c發揮功能。因此,控制部182包含處理液資訊取得部182c。處理液資訊取得部182c取得表示處理槽110之處理液相關之資訊之處理液資訊。例如,處理液資訊取得部182c基於濃度感測器162之測定結果取得處理液資訊。 Furthermore, the control unit 182 functions as a processing liquid information acquisition unit 182c by executing a computer program stored in the memory unit 184. Therefore, the control unit 182 includes a processing liquid information acquisition unit 182c. The processing liquid information acquisition unit 182c acquires processing liquid information representing information related to the processing liquid in the processing tank 110. For example, the processing liquid information acquisition unit 182c acquires the processing liquid information based on the measurement result of the concentration sensor 162.
接著,參考圖1~圖4,說明本實施形態之基板處理方法。圖4係本實施形態之基板處理方法之流程圖。 Next, referring to Figures 1 to 4, the substrate processing method of this embodiment is described. Figure 4 is a flow chart of the substrate processing method of this embodiment.
如圖4所示,步驟S10中,取得表示基板處理裝置100所處理之基板相關之資訊之基板資訊。例如,基板資訊取得部182a自記憶部184取得基板資訊。 As shown in FIG. 4 , in step S10, substrate information indicating information related to the substrate processed by the substrate processing device 100 is obtained. For example, the substrate information acquisition unit 182a obtains the substrate information from the memory unit 184.
例如,基板資訊顯示於搬入至基板處理裝置100之前對基板W進行之處理。一例中,基板資訊顯示於將基板W搬入至基板處理裝置100之前已對抗蝕劑進行灰化處理。或,基板資訊顯示於將基板W搬入至基板處理裝置100之前已對抗蝕劑進行離子注入。或,基板資訊顯示基板W為進行元件分離氧化處理之前之狀態。 For example, the substrate information shows the processing performed on the substrate W before being carried into the substrate processing device 100. In one example, the substrate information shows that the anti-etching agent has been ashed before the substrate W is carried into the substrate processing device 100. Or, the substrate information shows that the anti-etching agent has been ion implanted before the substrate W is carried into the substrate processing device 100. Or, the substrate information shows that the substrate W is in a state before the device separation oxidation process is performed.
步驟S20中,選擇處理液調整步驟。控制部182基於基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為處理液調整步驟。例如,處理液調整步驟選擇部182b選擇液體更換步驟及濃度調整步驟之任一者。 In step S20, a processing liquid adjustment step is selected. The control unit 182 selects either a liquid replacement step or a concentration adjustment step as the processing liquid adjustment step based on the substrate information. For example, the processing liquid adjustment step selection unit 182b selects either a liquid replacement step or a concentration adjustment step.
例如,於基板W係即便於將適當處理成為基板處理裝置100之處理對象之對象基板所需之處理液之濃度範圍設定得相對寬鬆時,亦可適當處理之基板,於該情形時,控制部182選擇液體更換步驟作為處理液調整步驟。作為一例,於為自已對抗蝕劑進行灰化處理之基板去除殘渣而處理基板之情形時,即便相對寬鬆地設定處理液之濃度範圍,亦可適當地處理基 板。因此,於基板係已對抗蝕劑進行灰化處理後之基板之情形時,控制部182選擇液體更換步驟。 For example, when the substrate W is a substrate that can be properly processed even when the concentration range of the processing liquid required for the substrate to be properly processed as the processing object of the substrate processing device 100 is set relatively loosely, the control unit 182 selects the liquid replacement step as the processing liquid adjustment step. As an example, when the substrate is processed to remove residues from a substrate that has been subjected to an ashing treatment with an anti-etching agent, the substrate can be properly processed even when the concentration range of the processing liquid is set relatively loosely. Therefore, when the substrate is a substrate that has been subjected to an ashing treatment with an anti-etching agent, the control unit 182 selects the liquid replacement step.
另一方面,於基板W係除非將適當處理對象基板所需之處理液之濃度範圍設定得相對狹窄,否則無法適當地處理之基板之情形時,控制部182選擇濃度調整步驟作為處理液調整步驟。作為一例,於基板W具有已進行離子注入之抗蝕劑之情形時,除非相對嚴格地設定處理液之濃度範圍,否則無法適當地去除、剝離抗蝕劑。因此,於基板W係具有已進行離子注入之抗蝕劑之基板之情形時,控制部182選擇濃度調整步驟。 On the other hand, when the substrate W is a substrate that cannot be properly processed unless the concentration range of the processing liquid required for properly processing the target substrate is set relatively narrow, the control unit 182 selects the concentration adjustment step as the processing liquid adjustment step. As an example, when the substrate W has an anti-etching agent that has been ion-implanted, the anti-etching agent cannot be properly removed or stripped unless the concentration range of the processing liquid is set relatively strictly. Therefore, when the substrate W is a substrate that has an anti-etching agent that has been ion-implanted, the control unit 182 selects the concentration adjustment step.
或,於對元件分離後之基板進行氧化處理之情形時,除非相對嚴格地設定處理液之濃度範圍,否則無法適當地處理基板。因此,於基板W係元件分離後要被氧化處理之基板之情形時,控制部182選擇濃度調整步驟。 Or, when the substrate after component separation is subjected to oxidation treatment, the substrate cannot be properly treated unless the concentration range of the treatment solution is set relatively strictly. Therefore, when the substrate W is a substrate to be subjected to oxidation treatment after component separation, the control unit 182 selects the concentration adjustment step.
如此,控制部182基於基板資訊,對於處理槽110之處理液選擇液體更換步驟及濃度調整步驟之任一者。典型而言,於對象基板到達基板處理裝置100之前,控制部182基於基板資訊選擇處理液調整步驟。 Thus, the control unit 182 selects either a liquid replacement step or a concentration adjustment step for the processing liquid in the processing tank 110 based on the substrate information. Typically, before the target substrate arrives at the substrate processing apparatus 100, the control unit 182 selects the processing liquid adjustment step based on the substrate information.
於步驟S20中選擇液體更換步驟之情形時,處理進行至步驟S30。另一方面,於步驟S20中選擇濃度調整步驟之情形時,處理進行至步驟S40。 When the liquid replacement step is selected in step S20, the process proceeds to step S30. On the other hand, when the concentration adjustment step is selected in step S20, the process proceeds to step S40.
於步驟S30中,進行液體更換步驟。藉由液體更換步驟,調整處理槽110之處理液。本說明書中,有時將選擇液體更換步驟時之處理液之調整記載為第1處理液調整步驟。 In step S30, a liquid replacement step is performed. The treatment liquid in the treatment tank 110 is adjusted by the liquid replacement step. In this specification, the adjustment of the treatment liquid when the liquid replacement step is selected is sometimes recorded as the first treatment liquid adjustment step.
該情形時,判定處理槽110之處理液是否滿足基準。基準可基於處理槽110之處理液之硫酸濃度及/或過氧化氫濃度而設定。 In this case, it is determined whether the treatment liquid in the treatment tank 110 meets the benchmark. The benchmark can be set based on the sulfuric acid concentration and/or hydrogen peroxide concentration of the treatment liquid in the treatment tank 110.
或,基準亦可基於自將處理槽110之處理液進行液體更換起之時間而設定。或,基準亦可基於在對處理槽110之處理液進行液體更換後所處理之基板W之組數而設定。基準亦可基於自將前一塊基板浸漬至處理槽110之處理液起經過之時間而設定。 Alternatively, the benchmark may be set based on the time since the treatment liquid in the treatment tank 110 was replaced. Alternatively, the benchmark may be set based on the number of substrates W processed after the treatment liquid in the treatment tank 110 was replaced. The benchmark may also be set based on the time since the previous substrate was immersed in the treatment liquid in the treatment tank 110.
於處理槽110之處理液滿足基準之情形時,不排出處理槽110之處理液。但,即便於該情形時,為維持過氧化氫水之分解之過氧化氫濃度,過氧化氫供給部134亦可以固定量對處理槽110持續供給過氧化氫水。 When the treatment liquid in the treatment tank 110 meets the standard, the treatment liquid in the treatment tank 110 is not discharged. However, even in this case, in order to maintain the concentration of hydrogen peroxide for decomposition of hydrogen peroxide, the hydrogen peroxide supply unit 134 can continue to supply hydrogen peroxide to the treatment tank 110 at a fixed amount.
另一方面,於處理槽110之處理液不滿足基準之情形時,對處理槽110之處理液之至少一部分進行更換。該情形時,排出處理槽110之處理液之至少一部分,另一方面,對處理槽110供給處理液。 On the other hand, when the treatment liquid in the treatment tank 110 does not meet the standard, at least a portion of the treatment liquid in the treatment tank 110 is replaced. In this case, at least a portion of the treatment liquid in the treatment tank 110 is discharged, and on the other hand, the treatment liquid is supplied to the treatment tank 110.
於排出處理槽110之處理液之情形時,一例中,排出外槽114之處理液。該情形時,控制部182驅動泵142,打開閥155並關閉閥154。藉此,可排出外槽114之處理液。又,排出內槽112之處理液。例如,控制部182 藉由打開閥152,而排出內槽112之處理液。 When discharging the treatment liquid of the treatment tank 110, in one example, the treatment liquid of the outer tank 114 is discharged. In this case, the control unit 182 drives the pump 142, opens the valve 155 and closes the valve 154. In this way, the treatment liquid of the outer tank 114 can be discharged. In addition, the treatment liquid of the inner tank 112 is discharged. For example, the control unit 182 discharges the treatment liquid of the inner tank 112 by opening the valve 152.
又,對處理槽110供給處理液。該情形時,處理液供給部130對處理槽110供給處理液。例如,硫酸供給部132對處理槽110供給硫酸。過氧化氫供給部134對處理槽110供給過氧化氫水。藉此,調整處理槽110之處理液。硫酸供給部132及過氧化氫供給部134以處理槽110中被供給之包含硫酸及過氧化氫水之處理液成為特定濃度之比例,分別供給硫酸及過氧化氫水。該情形時,藉由與硫酸及過氧化氫水之反應,處理液之溫度上升。 In addition, a treatment liquid is supplied to the treatment tank 110. In this case, the treatment liquid supply unit 130 supplies the treatment liquid to the treatment tank 110. For example, the sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110. The hydrogen peroxide supply unit 134 supplies hydrogen peroxide to the treatment tank 110. In this way, the treatment liquid in the treatment tank 110 is adjusted. The sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide respectively in a ratio such that the treatment liquid containing sulfuric acid and hydrogen peroxide supplied to the treatment tank 110 has a specific concentration. In this case, the temperature of the treatment liquid rises by reacting with sulfuric acid and hydrogen peroxide.
另,為將處理液維持特定溫度,可藉由驅動泵142及加熱器144,使處理液一面循環一面加熱。該情形時,加熱器144根據需要將處理液加熱。例如,於處理液之溫度低於特定溫度之情形時,加熱器144以上升至特定溫度之方式將處理液加熱。另一方面,當藉由與硫酸及過氧化氫水之反應而處理液之溫度上升至高於特定溫度時,加熱器144以下降至處理液之溫度之方式停止處理液之加熱。接著,處理進行至步驟S50A。 In addition, in order to maintain the processing liquid at a specific temperature, the processing liquid can be heated while circulating by driving the pump 142 and the heater 144. In this case, the heater 144 heats the processing liquid as needed. For example, when the temperature of the processing liquid is lower than a specific temperature, the heater 144 heats the processing liquid in a manner of raising the temperature to a specific temperature. On the other hand, when the temperature of the processing liquid rises to a temperature higher than a specific temperature by reacting with sulfuric acid and hydrogen peroxide, the heater 144 stops heating the processing liquid in a manner of lowering the temperature to the processing liquid. Then, the processing proceeds to step S50A.
步驟S50A中,將基板W浸漬於處理槽110之處理液中。其後,自處理槽110之處理液取出基板W。如上結束基板處理。 In step S50A, the substrate W is immersed in the processing liquid in the processing tank 110. Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110. The substrate processing is terminated as above.
步驟S40中,進行濃度調整步驟。藉由濃度調整步驟,調整處理槽110之處理液。本說明書中,有時將選擇濃度調整步驟時之處理液之調整記載為第2處理液調整步驟。 In step S40, a concentration adjustment step is performed. The treatment liquid in the treatment tank 110 is adjusted by the concentration adjustment step. In this specification, the adjustment of the treatment liquid when the concentration adjustment step is selected is sometimes described as the second treatment liquid adjustment step.
該情形時,調整處理槽110之處理液之濃度。例如,調整處理槽110之處理液中之過氧化氫濃度。一例中,增加處理槽110之處理液中之過氧化氫濃度。 In this case, the concentration of the treatment solution in the treatment tank 110 is adjusted. For example, the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 is adjusted. In one example, the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 is increased.
或,調整處理槽110之處理液中之硫酸濃度。一例中,增加處理槽110之處理液中之硫酸濃度。 Or, adjust the sulfuric acid concentration in the treatment solution of the treatment tank 110. In one example, increase the sulfuric acid concentration in the treatment solution of the treatment tank 110.
典型而言,處理液供給部130對處理槽110供給處理液。例如,硫酸供給部132對處理槽110供給硫酸。過氧化氫供給部134對處理槽110供給過氧化氫水。硫酸供給部132及過氧化氫供給部134以處理槽110中被供給之包含硫酸及過氧化氫水之處理液成為特定濃度之比例,分別供給硫酸及過氧化氫水。 Typically, the treatment liquid supply unit 130 supplies the treatment liquid to the treatment tank 110. For example, the sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110. The hydrogen peroxide supply unit 134 supplies hydrogen peroxide to the treatment tank 110. The sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide, respectively, in a ratio such that the treatment liquid containing sulfuric acid and hydrogen peroxide supplied to the treatment tank 110 has a specific concentration.
例如,於增加處理槽110之處理液中之過氧化氫濃度之情形時,硫酸供給部132及過氧化氫供給部134以增大過氧化氫水之比率而使處理槽110中之過氧化氫濃度增加之方式,供給硫酸及過氧化氫水。 For example, when the concentration of hydrogen peroxide in the treatment solution of the treatment tank 110 is increased, the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide in a manner that increases the ratio of hydrogen peroxide to increase the concentration of hydrogen peroxide in the treatment tank 110.
該情形時,使處理槽110之處理液循環。此處,為將處理液維持特定溫度,亦可藉由驅動泵142及加熱器144,使處理液一面循環一面加熱。 In this case, the processing liquid in the processing tank 110 is circulated. Here, in order to maintain the processing liquid at a specific temperature, the processing liquid can also be heated while circulating by driving the pump 142 and the heater 144.
控制部182供給硫酸及過氧化氫水,直至濃度感測器162中測定出之硫酸濃度及/或過氧化氫濃度成為特定濃度為止。又,控制部182以濃度感測器162中測定出之硫酸濃度及/或過氧化氫濃度維持特定濃度之方式,供 給硫酸及過氧化氫水。如此,控制部182可使用濃度感測器162,藉由反饋控制調整硫酸濃度及/或過氧化氫濃度。另,濃度調整於將基板W浸漬於處理槽110之前一刻進行,於遍歷特定期間未將基板W浸漬於處理槽110之情形時,優選為不進行濃度調整。接著,處理進行至步驟S50B。 The control unit 182 supplies sulfuric acid and hydrogen peroxide until the sulfuric acid concentration and/or hydrogen peroxide concentration measured by the concentration sensor 162 reaches a specific concentration. In addition, the control unit 182 supplies sulfuric acid and hydrogen peroxide in such a manner that the sulfuric acid concentration and/or hydrogen peroxide concentration measured by the concentration sensor 162 maintains a specific concentration. In this way, the control unit 182 can use the concentration sensor 162 to adjust the sulfuric acid concentration and/or hydrogen peroxide concentration by feedback control. In addition, the concentration adjustment is performed immediately before the substrate W is immersed in the processing tank 110. When the substrate W is not immersed in the processing tank 110 during the specific period, it is preferred not to perform the concentration adjustment. Then, the process proceeds to step S50B.
步驟S50B中,將基板浸漬於已進行過氧化氫濃度之調整之處理液中。其後,自處理槽110之處理液取出基板W。如上結束基板處理。 In step S50B, the substrate is immersed in the treatment solution whose hydrogen peroxide concentration has been adjusted. Thereafter, the substrate W is taken out from the treatment solution in the treatment tank 110. The substrate treatment is terminated as above.
根據本實施形態,由根據基板W以不同之態樣調整後之處理液處理基板。例如,於基板處理裝置100中要處理之基板亦可由調整為相對寬鬆之濃度範圍之處理液處理之情形時,於液體更換步驟中調整處理槽110之處理液。藉此,僅於不滿足基準之情形時,對處理槽110之處理液進行液體更換。因此,可抑制處理槽110之處理液之更換頻率,可減少處理液之成本。又,於基板處理裝置100中要處理之基板需以調整為相對嚴格之濃度範圍之處理液處理之情形時,於濃度調整步驟中調整處理槽110之處理液。藉此,可避免於未搬入基板之情形時以濃度調整後之狀態維持處理槽110之處理液,且適當地處理搬入之基板。因此,根據本實施形態,可根據基板W避免硫酸及過氧化氫水之過量使用。 According to the present embodiment, a substrate is processed by a processing liquid adjusted in different ways according to the substrate W. For example, in the case where the substrate to be processed in the substrate processing device 100 can also be processed by a processing liquid adjusted to a relatively loose concentration range, the processing liquid in the processing tank 110 is adjusted in the liquid replacement step. Thereby, the processing liquid in the processing tank 110 is replaced with liquid only when the benchmark is not met. Therefore, the replacement frequency of the processing liquid in the processing tank 110 can be suppressed, and the cost of the processing liquid can be reduced. In addition, in the case where the substrate to be processed in the substrate processing device 100 needs to be processed with a processing liquid adjusted to a relatively strict concentration range, the processing liquid in the processing tank 110 is adjusted in the concentration adjustment step. In this way, it is possible to avoid maintaining the processing liquid in the processing tank 110 in a state after adjusting the concentration when no substrate is moved in, and to properly process the moved in substrate. Therefore, according to this embodiment, it is possible to avoid excessive use of sulfuric acid and hydrogen peroxide according to the substrate W.
接著,參考圖1~圖5,說明本實施形態之基板處理裝置100之液體更換步驟。圖5(a)~圖5(c)係用以說明本實施形態之基板處理方法中之液體更換步驟之模式圖。 Next, referring to FIG. 1 to FIG. 5 , the liquid replacement step of the substrate processing device 100 of this embodiment is described. FIG. 5(a) to FIG. 5(c) are schematic diagrams for describing the liquid replacement step in the substrate processing method of this embodiment.
如圖5(a)所示,於處理槽110中貯存處理液。此處,於內槽112及外槽114各者貯存有定量之處理液。如上所述,自內槽112溢出之處理液流入至外槽114。將內槽112之定量設定為內槽112之容器之最大量。 As shown in FIG. 5(a), the processing liquid is stored in the processing tank 110. Here, a fixed amount of processing liquid is stored in each of the inner tank 112 and the outer tank 114. As described above, the processing liquid overflowing from the inner tank 112 flows into the outer tank 114. The fixed amount of the inner tank 112 is set to the maximum amount of the container of the inner tank 112.
將外槽114之定量設定為少於外槽114之容器之最大量之量。當多於定量之處理液流入至外槽114時,控制部182驅動泵142使外槽114之處理液流出至外部。 The fixed amount of the outer tank 114 is set to be less than the maximum amount of the container of the outer tank 114. When more than the fixed amount of processing liquid flows into the outer tank 114, the control unit 182 drives the pump 142 to make the processing liquid in the outer tank 114 flow out to the outside.
如圖5(b)所示,排出處理槽110之處理液。例如,於排出內槽112之處理液之情形時,控制部182打開閥152排出內槽112之處理液。 As shown in FIG. 5( b ), the treatment liquid in the treatment tank 110 is discharged. For example, when discharging the treatment liquid in the inner tank 112 , the control unit 182 opens the valve 152 to discharge the treatment liquid in the inner tank 112 .
又,於排出外槽114之處理液之情形時,控制部182藉由驅動泵142且關閉閥154並打開閥155,而排出外槽114之處理液。 Furthermore, when discharging the treatment liquid from the outer tank 114, the control unit 182 drives the pump 142, closes the valve 154 and opens the valve 155 to discharge the treatment liquid from the outer tank 114.
自處理槽110排出之處理液之量亦可根據自上一次進行液體更換起經過之時間而設定。例如,於自上一次進行液體更換起經過之時間相對較長之情形時,將自處理槽110排出之處理液之量設定得相對較多。反之,於自上一次進行液體更換起經過之時間相對較短之情形時,將自處理槽110排出之處理液之量設定得相對較少。 The amount of the treatment liquid discharged from the treatment tank 110 can also be set according to the time that has passed since the last liquid replacement. For example, when the time that has passed since the last liquid replacement is relatively long, the amount of the treatment liquid discharged from the treatment tank 110 is set to be relatively large. Conversely, when the time that has passed since the last liquid replacement is relatively short, the amount of the treatment liquid discharged from the treatment tank 110 is set to be relatively small.
或,自處理槽110排出之處理液之量亦可根據自上一次浸漬基板起經過之時間而設定。於自上一次浸漬基板起經過之時間相對較長之情形時,將自處理槽110排出之處理液之量設定得相對較多。反之,於自上一次浸 漬基板起經過之時間相對較短之情形時,將自處理槽110排出之處理液之量設定得相對較少。 Alternatively, the amount of the processing liquid discharged from the processing tank 110 may also be set according to the time that has passed since the last immersion of the substrate. When the time that has passed since the last immersion of the substrate is relatively long, the amount of the processing liquid discharged from the processing tank 110 is set to be relatively large. Conversely, when the time that has passed since the last immersion of the substrate is relatively short, the amount of the processing liquid discharged from the processing tank 110 is set to be relatively small.
典型而言,於自處理槽110排出處理液之情形時,處理槽110之處理液不循環。但,亦可一面使處理槽110之處理液循環,一面自處理槽110排出處理液。 Typically, when the processing liquid is discharged from the processing tank 110, the processing liquid in the processing tank 110 is not circulated. However, the processing liquid in the processing tank 110 may be circulated while the processing liquid is discharged from the processing tank 110.
如圖5(c)所示,處理液供給部130對處理槽110供給處理液。詳細而言,硫酸供給部132對處理槽110供給硫酸。又,過氧化氫供給部134對處理槽110供給過氧化氫水。該情形時,控制部182以硫酸供給部132及過氧化氫供給部134分別對處理槽110供給硫酸及過氧化氫水之方式,控制硫酸供給部132及過氧化氫供給部134。 As shown in FIG. 5(c), the treatment liquid supply unit 130 supplies the treatment liquid to the treatment tank 110. Specifically, the sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110. In addition, the hydrogen peroxide supply unit 134 supplies hydrogen peroxide water to the treatment tank 110. In this case, the control unit 182 controls the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 in such a manner that the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide water to the treatment tank 110, respectively.
於對處理槽110供給處理液後,處理槽110之處理液經由循環部140循環。例如,控制部182驅動泵142打開調整閥145、閥146,且打開閥154關閉閥155,藉此使處理槽110之處理液自處理槽110通過配管141循環至處理槽110。又,藉由控制部182驅動加熱器144,而將流過配管141之處理液加熱。 After the treatment liquid is supplied to the treatment tank 110, the treatment liquid in the treatment tank 110 circulates through the circulation unit 140. For example, the control unit 182 drives the pump 142 to open the regulating valve 145 and the valve 146, and opens the valve 154 and closes the valve 155, so that the treatment liquid in the treatment tank 110 circulates from the treatment tank 110 to the treatment tank 110 through the piping 141. In addition, the control unit 182 drives the heater 144 to heat the treatment liquid flowing through the piping 141.
此時,為維持處理槽110內之處理液,硫酸供給部132及過氧化氫供給部134可對處理槽110供給硫酸及過氧化氫水。自硫酸供給部132供給之硫酸及自過氧化氫供給部134供給之過氧化氫水之量之比率與液體更換前相同。 At this time, in order to maintain the treatment liquid in the treatment tank 110, the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 can supply sulfuric acid and hydrogen peroxide to the treatment tank 110. The ratio of the amount of sulfuric acid supplied from the sulfuric acid supply unit 132 and the amount of hydrogen peroxide supplied from the hydrogen peroxide supply unit 134 is the same as before the liquid is replaced.
如上所述,可藉由液體更換,調整處理槽110之處理液。根據本實施形態,可排出處理槽110之處理液之一部分且對處理槽110供給處理液。因此,可將處理槽110之處理液迅速調整為適於基板處理之處理條件。又,由於未完全廢棄處理槽110之處理液,故可減少基板處理成本。 As described above, the processing liquid in the processing tank 110 can be adjusted by replacing the liquid. According to this embodiment, a portion of the processing liquid in the processing tank 110 can be discharged and the processing liquid can be supplied to the processing tank 110. Therefore, the processing liquid in the processing tank 110 can be quickly adjusted to a processing condition suitable for substrate processing. In addition, since the processing liquid in the processing tank 110 is not completely discarded, the substrate processing cost can be reduced.
接著,參考圖1~圖6,說明本實施形態之基板處理方法中之液體更換步驟。圖6係顯示本實施形態之基板處理方法中液體更換步驟時之處理槽110內之硫酸濃度及過氧化氫濃度之時間變化之圖表。圖6中,線Lsp表示硫酸濃度之時間變化。線Lhp表示過氧化氫濃度之時間變化。 Next, referring to FIG. 1 to FIG. 6 , the liquid replacement step in the substrate processing method of this embodiment is described. FIG. 6 is a graph showing the time variation of the sulfuric acid concentration and the hydrogen peroxide concentration in the processing tank 110 during the liquid replacement step in the substrate processing method of this embodiment. In FIG. 6 , line Lsp represents the time variation of the sulfuric acid concentration. Line Lhp represents the time variation of the hydrogen peroxide concentration.
如線Lsp所示,於液體更換期間Pp之前,硫酸濃度大致固定。但,嚴格而言,硫酸濃度會隨著時間之經過而逐減低。這是因為於處理槽110內過氧化氫水與硫酸反應分解而產生水。 As shown by line Lsp, the sulfuric acid concentration is roughly constant before the liquid replacement period Pp. However, strictly speaking, the sulfuric acid concentration will gradually decrease over time. This is because hydrogen peroxide and sulfuric acid react and decompose in the treatment tank 110 to produce water.
於液體更換期間Pp,處理槽110之處理液至少部分地排出。又,於液體更換期間Pp,重新對處理槽110供給硫酸及過氧化氫水。典型而言,於開始排出處理槽110內之處理液後,對處理槽110供給新的處理液。但,處理槽110內之處理液之排出及供給亦可於任意時序進行。 During the liquid replacement period Pp, the treatment liquid in the treatment tank 110 is at least partially discharged. Also, during the liquid replacement period Pp, sulfuric acid and hydrogen peroxide are re-supplied to the treatment tank 110. Typically, after the treatment liquid in the treatment tank 110 is discharged, new treatment liquid is supplied to the treatment tank 110. However, the discharge and supply of the treatment liquid in the treatment tank 110 may be performed at any timing.
於液體更換期間Pp之後,與液體更換期間Pp之前相比,硫酸濃度增加。其後,硫酸濃度隨著時間之經過而逐漸減低。 After the liquid replacement period Pp, the sulfuric acid concentration increased compared to before the liquid replacement period Pp. Thereafter, the sulfuric acid concentration gradually decreased with the passage of time.
如線Lhp所示,於液體更換期間Pp之前,過氧化氫濃度大致固定。但,嚴格而言,過氧化氫濃度隨著時間之經過而逐漸減低。這是因為於處理槽110內過氧化氫水與硫酸反應分解而產生水。 As shown by line Lhp, the concentration of hydrogen peroxide is roughly constant before the liquid replacement period Pp. However, strictly speaking, the concentration of hydrogen peroxide gradually decreases with the passage of time. This is because hydrogen peroxide and sulfuric acid react and decompose in the treatment tank 110 to produce water.
於液體更換期間Pp結束後,與液體更換期間Pp之前相比,過氧化氫濃度增加。其後,過氧化氫濃度隨著時間之經過而減低。 After the liquid replacement period Pp ended, the hydrogen peroxide concentration increased compared to before the liquid replacement period Pp. Thereafter, the hydrogen peroxide concentration decreased as time passed.
另,於圖6中,於液體更換期間Pp之前及之後,使處理槽110之處理液一面經由循環部140循環一面加熱。亦可於液體更換期間Pp,使處理槽110之處理液一面經由循環部140循環一面加熱。 In addition, in FIG. 6 , before and after the liquid replacement period Pp, the processing liquid in the processing tank 110 is heated while circulating through the circulation part 140. Alternatively, during the liquid replacement period Pp, the processing liquid in the processing tank 110 is heated while circulating through the circulation part 140.
接著,參考圖1~圖7,說明本實施形態之基板處理方法。圖7係於本實施形態之基板處理方法中選擇液體更換步驟時之流程圖。 Next, referring to Figures 1 to 7, the substrate processing method of this embodiment is described. Figure 7 is a flow chart when selecting the liquid replacement step in the substrate processing method of this embodiment.
如圖7所示,於步驟S102中,判定基板處理裝置100處理之基板W是否為液體更換步驟之對象基板。例如,於基板W為已對抗蝕劑進行灰化處理之基板之情形時,控制部182判定為基板W是液體更換步驟之對象基板。典型而言,於基板到達基板處理裝置100之前,控制部182判定基板W是否為對象基板。 As shown in FIG. 7 , in step S102, it is determined whether the substrate W processed by the substrate processing device 100 is a target substrate for the liquid replacement step. For example, when the substrate W is a substrate that has been ashed with an anti-etching agent, the control unit 182 determines that the substrate W is a target substrate for the liquid replacement step. Typically, before the substrate arrives at the substrate processing device 100, the control unit 182 determines whether the substrate W is a target substrate.
於基板W非對象基板之情形時(於步驟S102中否(No)),處理返回至步驟S102。另一方面,於基板W為對象基板之情形時(於步驟S102中是(Yes)),處理進行至步驟S104。 When substrate W is not the target substrate (No in step S102), the process returns to step S102. On the other hand, when substrate W is the target substrate (Yes in step S102), the process proceeds to step S104.
於步驟S104中,判定處理槽110之處理液是否滿足特定基準。特定基準作為表示不調整處理槽110之處理液即可適當地處理基板W之指標而設定。於處理槽110之處理液滿足特定基準之情形時,不排出處理槽110之處理液。另一方面,於處理槽110之處理液不滿足特定基準之情形時,排出處理槽110之處理液並進行調整。 In step S104, it is determined whether the processing liquid in the processing tank 110 meets a specific standard. The specific standard is set as an indicator indicating that the substrate W can be properly processed without adjusting the processing liquid in the processing tank 110. When the processing liquid in the processing tank 110 meets the specific standard, the processing liquid in the processing tank 110 is not discharged. On the other hand, when the processing liquid in the processing tank 110 does not meet the specific standard, the processing liquid in the processing tank 110 is discharged and adjusted.
特定基準可基於處理槽110之處理液濃度而設定。例如,特定基準基於處理槽110之處理液中之過氧化氫濃度而設定。一例中,於處理槽110之處理液中之過氧化氫濃度為特定值以上之情形時,控制部182判定為滿足特定基準。另一方面,於處理槽110之處理液中之過氧化氫濃度低於特定值之情形時,控制部182判定為不滿足特定基準。 The specific benchmark can be set based on the concentration of the treatment liquid in the treatment tank 110. For example, the specific benchmark is set based on the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110. In one example, when the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 is above a specific value, the control unit 182 determines that the specific benchmark is met. On the other hand, when the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 is lower than a specific value, the control unit 182 determines that the specific benchmark is not met.
於處理槽110之處理液滿足特定基準之情形時(於步驟S104中是),處理進行至步驟S112。另一方面,於處理槽110之處理液不滿足特定基準之情形時(於步驟S104中否),處理進行至步驟S106。 When the treatment liquid in the treatment tank 110 meets the specific standard (yes in step S104), the treatment proceeds to step S112. On the other hand, when the treatment liquid in the treatment tank 110 does not meet the specific standard (no in step S104), the treatment proceeds to step S106.
步驟S106中,排出處理槽110之處理液。排出貯存於處理槽110之處理液之至少一部分。控制部182藉由驅動泵142,打開閥154並關閉閥155,而排出外槽114之處理液。又,控制部182藉由打開閥152,而排出內槽112之處理液。 In step S106, the treatment liquid in the treatment tank 110 is discharged. At least a portion of the treatment liquid stored in the treatment tank 110 is discharged. The control unit 182 discharges the treatment liquid in the outer tank 114 by driving the pump 142, opening the valve 154 and closing the valve 155. In addition, the control unit 182 discharges the treatment liquid in the inner tank 112 by opening the valve 152.
步驟S108中,對處理槽110供給處理液。處理液供給部130對處理槽 110供給處理液。藉由控制部182之控制,硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水。 In step S108, the treatment liquid is supplied to the treatment tank 110. The treatment liquid supply unit 130 supplies the treatment liquid to the treatment tank 110. Under the control of the control unit 182, the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide to the treatment tank 110.
步驟S110中,停止對處理槽110供給處理液。藉由控制部182之控制,停止自硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水。 In step S110, the supply of the treatment liquid to the treatment tank 110 is stopped. Under the control of the control unit 182, the supply of sulfuric acid and hydrogen peroxide from the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 to the treatment tank 110 is stopped.
步驟S112中,一面使處理槽110內之處理液循環,一面將處理液加熱。藉由控制部182之控制,驅動泵142並打開調整閥145、閥146,且打開閥154關閉閥155,藉此使處理槽110之處理液自處理槽110通過配管141循環至處理槽110。又,藉由控制部182之控制,加熱器144將流過配管141之處理液加熱。 In step S112, the treatment liquid in the treatment tank 110 is circulated while being heated. Under the control of the control unit 182, the pump 142 is driven and the regulating valves 145 and 146 are opened, and the valve 154 is opened and the valve 155 is closed, so that the treatment liquid in the treatment tank 110 is circulated from the treatment tank 110 to the treatment tank 110 through the piping 141. In addition, under the control of the control unit 182, the heater 144 heats the treatment liquid flowing through the piping 141.
步驟S114中,判定處理液之溫度是否為特定溫度。於處理液之溫度並非特定溫度之情形時(於步驟S114中否),處理返回至步驟S112。另一方面,於處理液之溫度為特定溫度之情形時(於步驟S114中是),處理進行至步驟S116。 In step S114, it is determined whether the temperature of the processing liquid is a specific temperature. When the temperature of the processing liquid is not a specific temperature (No in step S114), the process returns to step S112. On the other hand, when the temperature of the processing liquid is a specific temperature (Yes in step S114), the process proceeds to step S116.
步驟S116中,將基板W浸漬於處理槽110之處理液中。典型而言,基板保持部120於保持有基板W之狀態下朝處理槽110下降,將基板W浸漬於處理槽110之處理液中。此時,處理液供給部130亦可不對處理槽110供給硫酸及過氧化氫水。或,對於處理槽110之處理液,處理液供給部130亦可僅對處理槽110供給過氧化氫水。任一情形時,皆優選為將加熱器144 與泵142一起驅動,藉此一面使處理槽110之處理液循環一面將處理槽110之處理液加熱。 In step S116, the substrate W is immersed in the treatment liquid of the treatment tank 110. Typically, the substrate holding part 120 descends toward the treatment tank 110 while holding the substrate W, and immerses the substrate W in the treatment liquid of the treatment tank 110. At this time, the treatment liquid supply part 130 may not supply sulfuric acid and hydrogen peroxide to the treatment tank 110. Alternatively, the treatment liquid supply part 130 may only supply hydrogen peroxide to the treatment tank 110. In either case, it is preferred to drive the heater 144 together with the pump 142, thereby circulating the treatment liquid in the treatment tank 110 while heating the treatment liquid in the treatment tank 110.
其後,自處理槽110提起基板W。典型而言,自基板處理裝置100搬出基板W。 Thereafter, the substrate W is lifted from the processing tank 110. Typically, the substrate W is unloaded from the substrate processing apparatus 100.
步驟S118中,判定基板處理裝置100接下來要處理之基板W是否為對象基板。典型而言,於下一塊基板到達基板處理裝置100之前,控制部182判定基板W是否為對象基板。 In step S118, it is determined whether the substrate W to be processed next by the substrate processing device 100 is a target substrate. Typically, before the next substrate arrives at the substrate processing device 100, the control unit 182 determines whether the substrate W is a target substrate.
於下一塊基板W並非對象基板之情形時(於步驟S118中否),處理結束。另一方面,於下一塊基板W為對象基板之情形時(於步驟S118中是),處理進行至步驟S120。 When the next substrate W is not the target substrate (No in step S118), the processing ends. On the other hand, when the next substrate W is the target substrate (Yes in step S118), the processing proceeds to step S120.
於步驟S120中,判定處理槽110之處理液是否滿足特定基準。特定基準與步驟S104同樣設定。 In step S120, it is determined whether the treatment liquid in the treatment tank 110 meets a specific standard. The specific standard is set in the same way as step S104.
於處理槽110之處理液不滿足特定基準之情形時(於步驟S120中否),處理返回至步驟S106。另一方面,於處理槽110之處理液滿足特定基準之情形時(於步驟S120中是),處理返回至步驟S116。該情形時,處理液供給部130亦可不對處理槽110之處理液供給硫酸及過氧化氫水。或,處理液供給部130亦可只對處理槽110之處理液供給過氧化氫水。任一情形時,皆優選為將加熱器144與泵142一起驅動,藉此一面使處理槽110之處理液 循環一面將處理槽110之處理液加熱。 When the treatment liquid in the treatment tank 110 does not meet the specific standard (No in step S120), the process returns to step S106. On the other hand, when the treatment liquid in the treatment tank 110 meets the specific standard (Yes in step S120), the process returns to step S116. In this case, the treatment liquid supply unit 130 may not supply sulfuric acid and hydrogen peroxide to the treatment liquid in the treatment tank 110. Or, the treatment liquid supply unit 130 may only supply hydrogen peroxide to the treatment liquid in the treatment tank 110. In either case, it is preferred to drive the heater 144 together with the pump 142, so that the treatment liquid in the treatment tank 110 is circulated while the treatment liquid in the treatment tank 110 is heated.
本實施形態中,如上所述,於處理槽110之處理液滿足特定基準之情形時,不排出處理液而浸漬基板W。另一方面,於處理槽110之處理液不滿足特定基準之情形時,排出處理槽110之處理液之至少一部分,重新供給硫酸及過氧化氫水,藉此至少部分更換處理槽110之處理液。藉此,可減少更換處理液之液體之次數,且抑制處理液之成本增加。 In this embodiment, as described above, when the treatment liquid in the treatment tank 110 meets a specific standard, the treatment liquid is not discharged and the substrate W is immersed. On the other hand, when the treatment liquid in the treatment tank 110 does not meet the specific standard, at least a portion of the treatment liquid in the treatment tank 110 is discharged, and sulfuric acid and hydrogen peroxide are re-supplied to at least partially replace the treatment liquid in the treatment tank 110. In this way, the number of times the treatment liquid is replaced can be reduced, and the cost increase of the treatment liquid can be suppressed.
如上所述,已參考圖5~圖7,說明本實施形態之基板處理方法中之液體更換步驟及選擇液體更換步驟時之流程圖。另,本實施形態之基板處理方法中之濃度調整步驟如以下般進行。 As mentioned above, the liquid replacement step and the flow chart for selecting the liquid replacement step in the substrate processing method of this embodiment have been described with reference to FIGS. 5 to 7. In addition, the concentration adjustment step in the substrate processing method of this embodiment is performed as follows.
接著,參考圖1~圖8,說明本實施形態之基板處理方法中之濃度調整步驟。圖8(a)~圖8(c)係用以說明本實施形態之基板處理方法中之濃度調整步驟之模式圖。 Next, referring to Figures 1 to 8, the concentration adjustment step in the substrate processing method of this embodiment is described. Figures 8(a) to 8(c) are schematic diagrams used to illustrate the concentration adjustment step in the substrate processing method of this embodiment.
如圖8(a)所示,維持處理槽110內之處理液之狀態。此處,於內槽112及外槽114各者貯存有定量之處理液。例如,處理槽110內之處理液藉由一面循環一面加熱,而維持固定之狀態。 As shown in FIG8(a), the state of the treatment liquid in the treatment tank 110 is maintained. Here, a fixed amount of treatment liquid is stored in each of the inner tank 112 and the outer tank 114. For example, the treatment liquid in the treatment tank 110 is maintained in a fixed state by circulating and heating at the same time.
例如,處理槽110內之處理液維持硫酸濃度75%以上且90%以下,過氧化氫濃度0.8%以上且2.0%以下,溫度100℃以上且140℃以下之狀態。一例中,處理槽110內維持之處理液為硫酸濃度82%,過氧化氫濃度 1.0%,溫度110℃。 For example, the treatment liquid in the treatment tank 110 maintains a sulfuric acid concentration of 75% or more and 90% or less, a hydrogen peroxide concentration of 0.8% or more and 2.0% or less, and a temperature of 100°C or more and 140°C or less. In one example, the treatment liquid in the treatment tank 110 maintains a sulfuric acid concentration of 82%, a hydrogen peroxide concentration of 1.0%, and a temperature of 110°C.
藉由控制部182之控制,維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。 The temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid are maintained by the control of the control unit 182. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110, and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110. In addition, the heater 144 heats the treatment liquid with a constant amount of electricity.
如圖8(b)所示,調整處理槽110之處理液之濃度。此時,變更自硫酸供給部132供給之硫酸及自過氧化氫供給部134供給之過氧化氫水之量之比率。例如,於即將將基板W浸漬於處理槽110之處理液之前調整處理槽110之處理液之濃度。 As shown in FIG8(b), the concentration of the treatment liquid in the treatment tank 110 is adjusted. At this time, the ratio of the amount of sulfuric acid supplied from the sulfuric acid supply unit 132 and the amount of hydrogen peroxide supplied from the hydrogen peroxide supply unit 134 is changed. For example, the concentration of the treatment liquid in the treatment tank 110 is adjusted before the substrate W is immersed in the treatment liquid in the treatment tank 110.
此處,於維持處理槽110之處理液中之硫酸濃度之狀態下增加過氧化氫濃度。該情形時,控制部182以增加過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度增加為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。 Here, the concentration of hydrogen peroxide is increased while maintaining the concentration of sulfuric acid in the treatment solution of the treatment tank 110. In this case, the control unit 182 controls the hydrogen peroxide supply unit 134 by increasing the supply amount of hydrogen peroxide water until the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 increases. In addition, the control unit 182 controls the sulfuric acid supply unit 132 by supplying sulfuric acid according to the degree of maintaining the concentration of sulfuric acid in the treatment solution in the treatment tank 110.
一例中,處理槽110內維持之處理液為硫酸濃度82%,過氧化氫濃度1.4%,溫度110℃。 In one example, the treatment liquid maintained in the treatment tank 110 has a sulfuric acid concentration of 82%, a hydrogen peroxide concentration of 1.4%, and a temperature of 110°C.
其後,控制部182使基板W浸漬於處理槽110之處理液中,維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃 度,直至自處理槽110之處理液提起基板W為止。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。 Afterwards, the control unit 182 immerses the substrate W in the treatment liquid in the treatment tank 110, and maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid, until the substrate W is lifted out of the treatment liquid in the treatment tank 110. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110, and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110. In addition, the heater 144 heats the treatment liquid with a constant amount of electricity.
控制部182自處理槽110之處理液提起基板W後,變更處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。典型而言,控制部182將處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度之任一者,變更為浸漬基板W之前之狀態。 After lifting the substrate W from the processing liquid in the processing tank 110, the control unit 182 changes the temperature of the processing liquid in the processing tank 110, the sulfuric acid concentration of the processing liquid, and the hydrogen peroxide concentration in the processing liquid. Typically, the control unit 182 changes any one of the temperature of the processing liquid in the processing tank 110, the sulfuric acid concentration of the processing liquid, and the hydrogen peroxide concentration in the processing liquid to the state before the substrate W is immersed.
如圖8(c)所示,恢復處理槽110之處理液之狀態。此處,於維持處理槽110之處理液中之硫酸濃度之狀態下降低過氧化氫濃度。該情形時,控制部182以減少過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度降低為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。此時,再次變更自硫酸供給部132供給之硫酸及自過氧化氫供給部134供給之過氧化氫水之量之比率。 As shown in FIG8(c), the state of the treatment liquid in the treatment tank 110 is restored. Here, the concentration of hydrogen peroxide is reduced while maintaining the concentration of sulfuric acid in the treatment liquid in the treatment tank 110. In this case, the control unit 182 controls the hydrogen peroxide supply unit 134 by reducing the supply amount of hydrogen peroxide until the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 is reduced. In addition, the control unit 182 controls the sulfuric acid supply unit 132 by supplying sulfuric acid in accordance with the degree of maintaining the concentration of sulfuric acid in the treatment liquid in the treatment tank 110. At this time, the ratio of the amount of sulfuric acid supplied from the sulfuric acid supply unit 132 and the amount of hydrogen peroxide supplied from the hydrogen peroxide supply unit 134 is changed again.
一例中,於處理槽110內維持之處理液為硫酸濃度82%,過氧化氫濃度1.0%,溫度110℃。 In one example, the treatment liquid maintained in the treatment tank 110 has a sulfuric acid concentration of 82%, a hydrogen peroxide concentration of 1.0%, and a temperature of 110°C.
其後,控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過 氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。 Thereafter, the control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110, and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110. In addition, the heater 144 heats the treatment liquid with a constant amount of electricity.
接著,參考圖1~圖9,說明本實施形態之基板處理方法中之濃度調整步驟。圖9係顯示本實施形態之基板處理方法中,濃度調整步驟時之處理槽110內之硫酸濃度及過氧化氫濃度之時間變化之圖表。圖9中,線Lsc表示硫酸濃度之時間變化。線Lhc表示過氧化氫濃度之時間變化。 Next, referring to FIG. 1 to FIG. 9 , the concentration adjustment step in the substrate processing method of this embodiment is described. FIG. 9 is a graph showing the time variation of the sulfuric acid concentration and the hydrogen peroxide concentration in the processing tank 110 during the concentration adjustment step in the substrate processing method of this embodiment. In FIG. 9 , line Lsc represents the time variation of the sulfuric acid concentration. Line Lhc represents the time variation of the hydrogen peroxide concentration.
如線Lsc所示,於濃度調整期間Pc之前,硫酸濃度維持目標濃度Tsb。但,嚴格而言,硫酸濃度隨著時間之經過而相對於目標濃度Tsb變動。這是因為硫酸供給部132基於濃度感測器162之測定結果,間歇性對處理槽110供給硫酸。此處,當硫酸濃度減低而達到目標濃度Tsb時,硫酸供給部132對處理槽110供給特定量之硫酸。因此,硫酸濃度自目標濃度Tsb暫時增加。 As shown by line Lsc, before the concentration adjustment period Pc, the sulfuric acid concentration maintains the target concentration Tsb. However, strictly speaking, the sulfuric acid concentration changes relative to the target concentration Tsb as time passes. This is because the sulfuric acid supply unit 132 intermittently supplies sulfuric acid to the treatment tank 110 based on the measurement result of the concentration sensor 162. Here, when the sulfuric acid concentration decreases and reaches the target concentration Tsb, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110. Therefore, the sulfuric acid concentration temporarily increases from the target concentration Tsb.
於濃度調整期間Pc,對處理槽110供給於液體更換期間Pp成為新的處理液之硫酸及過氧化氫水。典型而言,濃度調整期間Pc係將基板W浸漬於處理槽110之處理液之前一刻之期間。 During the concentration adjustment period Pc, sulfuric acid and hydrogen peroxide, which become new treatment liquids during the liquid replacement period Pp, are supplied to the treatment tank 110. Typically, the concentration adjustment period Pc is the period immediately before the substrate W is immersed in the treatment liquid of the treatment tank 110.
此處,與濃度調整期間Pc之前相比,硫酸濃度於濃度調整期間Pc之後亦維持目標濃度Tsb。該情形時,嚴格而言,硫酸濃度亦隨著時間之經過而相對於目標濃度Tsb變動。 Here, the sulfuric acid concentration also maintains the target concentration Tsb after the concentration adjustment period Pc compared to before the concentration adjustment period Pc. In this case, strictly speaking, the sulfuric acid concentration also changes relative to the target concentration Tsb as time passes.
另一方面,如線Lhc所示,於濃度調整期間Pc之前,過氧化氫濃度維 持目標濃度Tob1。但,嚴格而言,過氧化氫濃度隨著時間之經過而相對於目標濃度Tob1變動。這是因為過氧化氫供給部134間歇性對處理槽110供給過氧化氫水。此處,當過氧化氫濃度減低而達到目標濃度Tob1時,過氧化氫供給部134亦對處理槽110供給特定量之過氧化氫水。因此,過氧化氫濃度自目標濃度Tob1暫時增加。 On the other hand, as shown by line Lhc, before the concentration adjustment period Pc, the hydrogen peroxide concentration maintains the target concentration Tob1. However, strictly speaking, the hydrogen peroxide concentration changes relative to the target concentration Tob1 as time passes. This is because the hydrogen peroxide supply unit 134 intermittently supplies hydrogen peroxide water to the treatment tank 110. Here, when the hydrogen peroxide concentration decreases and reaches the target concentration Tob1, the hydrogen peroxide supply unit 134 also supplies a specific amount of hydrogen peroxide water to the treatment tank 110. Therefore, the hydrogen peroxide concentration temporarily increases from the target concentration Tob1.
與濃度調整期間Pc之前相比,過氧化氫濃度於濃度調整期間Pc之後增加。這是因為藉由濃度調整,過氧化氫水之目標濃度已自目標濃度Tob1變更為目標濃度Tob2。但,嚴格而言,過氧化氫濃度隨著時間之經過而相對於目標濃度Tob2變動。如上所述,這是因為過氧化氫供給部134間歇性對處理槽110供給過氧化氫水。 The hydrogen peroxide concentration increases after the concentration adjustment period Pc compared to before the concentration adjustment period Pc. This is because the target concentration of hydrogen peroxide water has been changed from target concentration Tob1 to target concentration Tob2 by the concentration adjustment. However, strictly speaking, the hydrogen peroxide concentration changes relative to the target concentration Tob2 as time passes. As described above, this is because the hydrogen peroxide supply unit 134 intermittently supplies hydrogen peroxide water to the processing tank 110.
其後,若經過特定期間,未預定將基板W浸漬於處理槽110之處理液,則過氧化氫濃度之目標濃度自目標濃度Tob2恢復為目標濃度Tob1。 Thereafter, if the substrate W is not immersed in the processing liquid of the processing tank 110 after a certain period of time, the target concentration of hydrogen peroxide is restored from the target concentration Tob2 to the target concentration Tob1.
接著,參考圖1~圖10,說明本發明之基板處理裝置100之實施形態。圖10(a)係顯示本實施形態之基板處理方法中處理槽110內之硫酸濃度之時間變化之圖表,圖10(b)係顯示本實施形態之基板處理方法中處理槽110內之過氧化氫濃度之時間變化之圖表。 Next, referring to FIG. 1 to FIG. 10 , the implementation form of the substrate processing device 100 of the present invention is described. FIG. 10 (a) is a graph showing the time variation of the sulfuric acid concentration in the processing tank 110 in the substrate processing method of the present implementation form, and FIG. 10 (b) is a graph showing the time variation of the hydrogen peroxide concentration in the processing tank 110 in the substrate processing method of the present implementation form.
如圖10(a)所示,硫酸濃度相對於目標濃度Ts變動。這是因為硫酸供給部132基於濃度感測器162之測定結果,間歇性對處理槽110供給硫酸。 As shown in Figure 10(a), the sulfuric acid concentration varies relative to the target concentration Ts. This is because the sulfuric acid supply unit 132 intermittently supplies sulfuric acid to the treatment tank 110 based on the measurement results of the concentration sensor 162.
詳細而言,當硫酸供給部132停止供給硫酸特定期間後,硫酸濃度隨著時間之經過逐漸降低。當濃度感測器162測定出硫酸濃度達到下限Tsd時,控制部182以硫酸供給部132對處理槽110供給特定量之硫酸之方式控制硫酸供給部132。另,由硫酸供給部132供給之硫酸之量以由濃度感測器162測定出之硫酸濃度不超過上限Tsu之方式設定。因此,硫酸濃度隨著時間經過相對於目標濃度Ts變動。 In detail, after the sulfuric acid supply unit 132 stops supplying sulfuric acid for a specific period of time, the sulfuric acid concentration gradually decreases as time passes. When the concentration sensor 162 determines that the sulfuric acid concentration reaches the lower limit Tsd, the control unit 182 controls the sulfuric acid supply unit 132 in such a manner that the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110. In addition, the amount of sulfuric acid supplied by the sulfuric acid supply unit 132 is set in such a manner that the sulfuric acid concentration measured by the concentration sensor 162 does not exceed the upper limit Tsu. Therefore, the sulfuric acid concentration changes relative to the target concentration Ts as time passes.
如圖10(b)所示,過氧化氫濃度相對於目標濃度Th變動。這是因為過氧化氫供給部134基於濃度感測器162之測定結果,間歇性對處理槽110供給過氧化氫水。 As shown in FIG10(b), the hydrogen peroxide concentration varies relative to the target concentration Th. This is because the hydrogen peroxide supply unit 134 intermittently supplies hydrogen peroxide water to the processing tank 110 based on the measurement result of the concentration sensor 162.
詳細而言,當過氧化氫供給部134停止供給過氧化氫水特定期間後,過氧化氫濃度隨著時間之經過逐漸降低。當濃度感測器162測定出過氧化氫濃度達到下限Thd時,控制部182以過氧化氫供給部134對處理槽110供給特定量之過氧化氫水之方式控制過氧化氫供給部134。另,由過氧化氫供給部134供給之過氧化氫水之量以由濃度感測器162測定出之過氧化氫濃度不超過上限Thu之方式設定。因此,過氧化氫濃度隨著時間之經過而相對於目標濃度Th變動。 In detail, when the hydrogen peroxide supply unit 134 stops supplying hydrogen peroxide for a specific period of time, the concentration of hydrogen peroxide gradually decreases as time passes. When the concentration sensor 162 determines that the hydrogen peroxide concentration reaches the lower limit Thd, the control unit 182 controls the hydrogen peroxide supply unit 134 in such a manner that the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide to the treatment tank 110. In addition, the amount of hydrogen peroxide supplied by the hydrogen peroxide supply unit 134 is set in such a manner that the hydrogen peroxide concentration measured by the concentration sensor 162 does not exceed the upper limit Thu. Therefore, the hydrogen peroxide concentration changes relative to the target concentration Th as time passes.
另,如圖10(a)及圖10(b)所示,硫酸濃度及過氧化氫濃度亦可對目標濃度進行反饋控制。又,反饋控制適宜於濃度調整步驟中進行。但,反饋控制亦可於液體更換步驟中進行。 In addition, as shown in Figure 10(a) and Figure 10(b), the sulfuric acid concentration and hydrogen peroxide concentration can also be feedback controlled to the target concentration. In addition, feedback control is suitable for the concentration adjustment step. However, feedback control can also be performed in the liquid replacement step.
接著,參考圖1~圖11,說明本實施形態之基板處理方法中之濃度調整步驟。圖11係本實施形態之基板處理方法中選擇濃度調整步驟時之流程圖。 Next, referring to Figures 1 to 11, the concentration adjustment step in the substrate processing method of this embodiment is described. Figure 11 is a flow chart for selecting the concentration adjustment step in the substrate processing method of this embodiment.
如圖11所示,於步驟S202中,維持處理槽110內之處理液之狀態。控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度及過氧化氫濃度。控制部182基於濃度感測器162之結果,以處理液之硫酸濃度及過氧化氫濃度分別成為特定值之方式,控制硫酸供給部132及過氧化氫供給部134。又,控制部182基於由加熱器144測定出之溫度,以處理液維持特定溫度之方式控制加熱器144。 As shown in FIG. 11 , in step S202, the state of the treatment liquid in the treatment tank 110 is maintained. The control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration of the treatment liquid. Based on the result of the concentration sensor 162, the control unit 182 controls the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 in such a manner that the sulfuric acid concentration and the hydrogen peroxide concentration of the treatment liquid become specific values, respectively. In addition, the control unit 182 controls the heater 144 in such a manner that the treatment liquid maintains a specific temperature based on the temperature measured by the heater 144.
步驟S204中,判定基板處理裝置100處理之基板W是否為要進行濃度調整之對象基板。典型而言,於基板到達基板處理裝置100之前,控制部182判定基板W是否為對象基板。 In step S204, it is determined whether the substrate W processed by the substrate processing device 100 is a target substrate for concentration adjustment. Typically, before the substrate arrives at the substrate processing device 100, the control unit 182 determines whether the substrate W is a target substrate.
例如,於基板W為具有已進行離子注入之抗蝕劑之基板之情形時,控制部182判定為基板W是要進行濃度調整之對象基板。或,於基板W為進行元件分離後之氧化處理之基板之情形時,控制部182判定為基板W是要進行濃度調整之對象基板。 For example, when the substrate W is a substrate having an anti-etching agent that has been ion-implanted, the control unit 182 determines that the substrate W is a target substrate for concentration adjustment. Or, when the substrate W is a substrate that has been oxidized after device separation, the control unit 182 determines that the substrate W is a target substrate for concentration adjustment.
於基板W並非對象基板之情形時(於步驟S204中否),處理返回至步驟S202。另一方面,於基板W為對象基板之情形時(於步驟S204中是),處理進行至步驟S206。 When substrate W is not the target substrate (No in step S204), the process returns to step S202. On the other hand, when substrate W is the target substrate (Yes in step S204), the process proceeds to step S206.
步驟S206中,增加處理槽110內之處理液中之過氧化氫濃度。典型而言,控制部182以增加過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度增加為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。 In step S206, the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 is increased. Typically, the control unit 182 controls the hydrogen peroxide supply unit 134 by increasing the supply amount of hydrogen peroxide until the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 increases. In addition, the control unit 182 controls the sulfuric acid supply unit 132 by supplying sulfuric acid at a level that maintains the concentration of sulfuric acid in the treatment solution in the treatment tank 110.
步驟S208中,判定處理液之濃度調整是否結束。當過氧化氫濃度增加且濃度感測器162顯示特定值時,結束處理液之濃度調整。 In step S208, it is determined whether the concentration adjustment of the treatment solution is completed. When the concentration of hydrogen peroxide increases and the concentration sensor 162 displays a specific value, the concentration adjustment of the treatment solution is completed.
於處理液之調整未結束之情形時(於步驟S208中否),處理返回至步驟S208。另一方面,於處理液之調整結束之情形時(於步驟S208中是),處理進行至步驟S210。 When the adjustment of the treatment liquid is not completed (No in step S208), the process returns to step S208. On the other hand, when the adjustment of the treatment liquid is completed (Yes in step S208), the process proceeds to step S210.
步驟S210中,維持處理槽110內之處理液之狀態。控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。 In step S210, the state of the treatment liquid in the treatment tank 110 is maintained. The control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110, and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110. In addition, the heater 144 heats the treatment liquid with a constant amount of electricity.
步驟S212中,將基板W浸漬於處理槽110之處理液中。典型而言,將基板W搬入至基板處理裝置100,浸漬於處理槽110之處理液。其後,自基板處理裝置100搬入基板W。其後,處理進行至步驟S214。 In step S212, the substrate W is immersed in the processing liquid in the processing tank 110. Typically, the substrate W is moved into the substrate processing device 100 and immersed in the processing liquid in the processing tank 110. Thereafter, the substrate W is moved in from the substrate processing device 100. Thereafter, the processing proceeds to step S214.
步驟S214中,判定是否存在基板處理裝置100接下來應處理之基板W,且,該基板W是否為對象基板。典型而言,於下一塊基板到達基板處理裝置100之前,控制部182判定有無下一塊基板W及下一塊基板W是否為對象基板。 In step S214, it is determined whether there is a substrate W to be processed next by the substrate processing device 100, and whether the substrate W is a target substrate. Typically, before the next substrate arrives at the substrate processing device 100, the control unit 182 determines whether there is a next substrate W and whether the next substrate W is a target substrate.
於無下一塊基板W、或下一塊基板W並非對象基板之情形時(於步驟S214中否),處理進行至步驟S216。另一方面,於有下一塊基板W,且該基板W為對象基板之情形時(於步驟S214中是),處理返回至步驟S210。 When there is no next substrate W or the next substrate W is not the target substrate (No in step S214), the process proceeds to step S216. On the other hand, when there is a next substrate W and the substrate W is the target substrate (Yes in step S214), the process returns to step S210.
步驟S216中,降低處理槽110內之處理液之過氧化氫濃度。典型而言,控制部182以減少過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度降低為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。 In step S216, the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 is reduced. Typically, the control unit 182 controls the hydrogen peroxide supply unit 134 by reducing the supply amount of hydrogen peroxide until the concentration of hydrogen peroxide in the treatment solution in the treatment tank 110 is reduced. In addition, the control unit 182 controls the sulfuric acid supply unit 132 by supplying sulfuric acid at a level that maintains the concentration of sulfuric acid in the treatment solution in the treatment tank 110.
步驟S218中,判定處理液之濃度調整是否結束。當過氧化氫濃度降低且濃度感測器162顯示特定值時,結束處理液之濃度調整。 In step S218, it is determined whether the concentration adjustment of the treatment liquid is completed. When the concentration of hydrogen peroxide decreases and the concentration sensor 162 displays a specific value, the concentration adjustment of the treatment liquid is completed.
於處理液之調整未結束之情形時(於步驟S218中否),處理返回至步驟S216。另一方面,於處理液之調整結束之情形時(於步驟S218中是),處理進行至步驟S220。 When the adjustment of the treatment liquid is not completed (No in step S218), the process returns to step S216. On the other hand, when the adjustment of the treatment liquid is completed (Yes in step S218), the process proceeds to step S220.
於步驟S220中,維持處理槽110內之處理液之狀態。控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。 In step S220, the state of the treatment liquid in the treatment tank 110 is maintained. The control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110, and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110. In addition, the heater 144 heats the treatment liquid with a constant amount of electricity.
根據本實施形態,如上所述,調整處理槽110之處理液之濃度。根據本實施形態,於將基板W浸漬於處理槽110之前一刻,將處理槽110之處理液調整為適於處理基板W之濃度。因此,於非濃度調整之對象之基板之情形時,亦可不調整處理槽110之處理液之濃度,可避免過氧化氫水之過量使用。 According to this embodiment, as described above, the concentration of the treatment liquid in the treatment tank 110 is adjusted. According to this embodiment, the treatment liquid in the treatment tank 110 is adjusted to a concentration suitable for treating the substrate W just before the substrate W is immersed in the treatment tank 110. Therefore, in the case of a substrate that is not the object of concentration adjustment, the concentration of the treatment liquid in the treatment tank 110 may not be adjusted, thereby avoiding excessive use of hydrogen peroxide.
又,於圖9及圖11中,作為濃度調整之一例,於基板W為對象基板之情形時,增加過氧化氫濃度,但本實施形態不限定於此。於基板W為對象基板之情形時,亦可增加硫酸濃度。 In addition, in FIG. 9 and FIG. 11, as an example of concentration adjustment, when substrate W is a target substrate, the concentration of hydrogen peroxide is increased, but the present embodiment is not limited to this. When substrate W is a target substrate, the concentration of sulfuric acid can also be increased.
又,於圖4所示之流程圖中,處理液調整步驟基於在基板處理裝置100處理基板之前進行之表示基板相關之資訊之基板資訊而選擇,但本實施形態不限定於此。處理液調整步驟亦可基於基板資訊與另外之資訊而選擇。 Furthermore, in the flowchart shown in FIG. 4 , the processing liquid adjustment step is selected based on substrate information indicating information related to the substrate performed before the substrate processing apparatus 100 processes the substrate, but the present embodiment is not limited thereto. The processing liquid adjustment step may also be selected based on the substrate information and other information.
接著,參考圖1~圖12,說明本實施形態之基板處理方法。圖12係本實施形態之基板處理方法之流程圖。 Next, referring to Figures 1 to 12, the substrate processing method of this embodiment is described. Figure 12 is a flow chart of the substrate processing method of this embodiment.
如圖12所示,步驟S10中,取得基板處理裝置100處理之基板W相關之基板資訊。例如,基板資訊取得部182a自記憶部184取得基板資訊。 As shown in FIG. 12 , in step S10, substrate information related to the substrate W processed by the substrate processing device 100 is obtained. For example, the substrate information acquisition unit 182a obtains the substrate information from the storage unit 184.
於步驟S10A中,取得表示處理槽110之處理液之狀態之處理液資訊。處理液資訊可表示處理槽110之處理液中之硫酸濃度、過氧化氫濃度及溫度之任一者。例如,濃度感測器162測定處理槽110內之處理液中之硫酸濃度及過氧化氫濃度。又,加熱器144測定處理液之溫度。處理液資訊取得部182c自濃度感測器162及/或加熱器144取得處理液資訊。 In step S10A, treatment liquid information indicating the state of the treatment liquid in the treatment tank 110 is obtained. The treatment liquid information may indicate any one of the sulfuric acid concentration, hydrogen peroxide concentration, and temperature in the treatment liquid in the treatment tank 110. For example, the concentration sensor 162 measures the sulfuric acid concentration and hydrogen peroxide concentration in the treatment liquid in the treatment tank 110. In addition, the heater 144 measures the temperature of the treatment liquid. The treatment liquid information acquisition unit 182c obtains the treatment liquid information from the concentration sensor 162 and/or the heater 144.
步驟S20中,選擇處理液調整步驟。控制部182基於基板資訊及處理液資訊,選擇以液體更換步驟或濃度調整步驟之哪一者調整處理槽110之處理液。典型而言,控制部182於基板W到達基板處理裝置100之前,基於基板資訊及處理液資訊,選擇處理液調整步驟。 In step S20, a processing liquid adjustment step is selected. The control unit 182 selects whether to adjust the processing liquid in the processing tank 110 by a liquid replacement step or a concentration adjustment step based on the substrate information and the processing liquid information. Typically, the control unit 182 selects the processing liquid adjustment step based on the substrate information and the processing liquid information before the substrate W arrives at the substrate processing device 100.
例如,基於基板資訊,設定處理槽110之處理液之目標值。一例中,根據於搬入至基板處理裝置100之前對基板W進行之處理,設定處理槽110之處理液中之目標硫酸濃度、目標過氧化氫濃度及目標溫度。 For example, based on the substrate information, the target value of the processing liquid in the processing tank 110 is set. In one example, the target sulfuric acid concentration, target hydrogen peroxide concentration and target temperature in the processing liquid in the processing tank 110 are set based on the processing performed on the substrate W before being moved into the substrate processing device 100.
處理液調整步驟選擇部182b選擇處理液調整步驟。例如,處理液調整步驟選擇部182b自基於基板資訊設定之目標硫酸濃度、目標過氧化氫濃度及目標溫度、與處理液資訊所示之處理槽110中之處理液之硫酸濃度、目標過氧化氫濃度及目標溫度之差量,選擇處理液調整步驟。例如, 於差量相對較大之情形時,處理液調整步驟選擇部182b選擇液體更換步驟,作為處理液調整步驟。另一方面,於差量相對較小之情形時,處理液調整步驟選擇部182b選擇濃度調整步驟,作為處理液調整步驟。 The treatment liquid adjustment step selection unit 182b selects a treatment liquid adjustment step. For example, the treatment liquid adjustment step selection unit 182b selects a treatment liquid adjustment step from the difference between the target sulfuric acid concentration, target hydrogen peroxide concentration, and target temperature set based on the substrate information and the sulfuric acid concentration, target hydrogen peroxide concentration, and target temperature of the treatment liquid in the treatment tank 110 shown in the treatment liquid information. For example, when the difference is relatively large, the treatment liquid adjustment step selection unit 182b selects a liquid replacement step as the treatment liquid adjustment step. On the other hand, when the difference is relatively small, the processing liquid adjustment step selection unit 182b selects the concentration adjustment step as the processing liquid adjustment step.
步驟S20中選擇液體更換步驟之情形時,處理進行至步驟S30。另一方面,步驟S20中選擇濃度調整步驟之情形時,處理進行至步驟S40。 When the liquid replacement step is selected in step S20, the processing proceeds to step S30. On the other hand, when the concentration adjustment step is selected in step S20, the processing proceeds to step S40.
步驟S30中,進行液體更換步驟。藉由液體更換步驟,調整處理槽110之處理液。如上所述,判定處理槽110之處理液是否滿足基準。於處理液滿足基準之情形時,不排出處理槽110之處理液。於處理液不滿足基準之情形時,排出處理槽110之處理液並重新對處理槽110供給硫酸及過氧化氫水。其後,處理進行至步驟S50A。 In step S30, a liquid replacement step is performed. The treatment liquid in the treatment tank 110 is adjusted by the liquid replacement step. As described above, it is determined whether the treatment liquid in the treatment tank 110 meets the standard. When the treatment liquid meets the standard, the treatment liquid in the treatment tank 110 is not discharged. When the treatment liquid does not meet the standard, the treatment liquid in the treatment tank 110 is discharged and sulfuric acid and hydrogen peroxide are re-supplied to the treatment tank 110. Thereafter, the treatment proceeds to step S50A.
步驟S50A中,將基板W浸漬於處理槽110之處理液。其後,自處理槽110之處理液取出基板W。如上結束基板處理。 In step S50A, the substrate W is immersed in the processing liquid in the processing tank 110. Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110. The substrate processing is terminated as above.
步驟S40中,進行濃度調整步驟。該情形時,調整處理槽110之處理液之濃度。接著,處理進行至步驟S50B。 In step S40, a concentration adjustment step is performed. In this case, the concentration of the treatment liquid in the treatment tank 110 is adjusted. Then, the treatment proceeds to step S50B.
步驟S50B中,將基板浸漬於處理槽110之處理液中。其後,自處理槽110之處理液取出基板W。如上結束基板處理。 In step S50B, the substrate is immersed in the processing liquid in the processing tank 110. Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110. The substrate processing is terminated as above.
根據本實施形態,不僅考慮基板資訊還考慮處理液資訊,選擇處理 液調整步驟。因此,亦可考慮調整處理液所需之時間而適當地處理基板W。 According to this embodiment, not only substrate information but also process liquid information is considered to select the process liquid adjustment step. Therefore, the time required to adjust the process liquid can also be considered to appropriately process the substrate W.
又,於參考圖1~圖12上述之說明中,出於避免發明過於複雜之目的,於1個基板處理裝置100中處理基板W,但本實施形態不限定於此。基板W亦可於2個以上之基板處理裝置100中處理。 In addition, in the above description with reference to FIG. 1 to FIG. 12, in order to avoid the invention being too complicated, the substrate W is processed in one substrate processing device 100, but the present embodiment is not limited thereto. The substrate W can also be processed in two or more substrate processing devices 100.
接著,參考圖13,說明具備本實施形態之基板處理裝置100之基板處理系統10。圖13係具備本實施形態之基板處理裝置100之基板處理系統10之模式圖。圖13所示之基板處理系統10具備第1基板處理裝置100A~第3基板處理裝置100C。 Next, referring to FIG. 13 , a substrate processing system 10 having a substrate processing device 100 of the present embodiment will be described. FIG. 13 is a schematic diagram of a substrate processing system 10 having a substrate processing device 100 of the present embodiment. The substrate processing system 10 shown in FIG. 13 has a first substrate processing device 100A to a third substrate processing device 100C.
如圖13所示,基板處理系統10具備投入部20、複數個收納部30、交接機構40、移出部50、緩衝單元BU、第1搬送裝置CTC、第2搬送裝置WTR、複數個基板處理裝置100、及控制裝置180。 As shown in FIG. 13 , the substrate processing system 10 includes an input section 20, a plurality of storage sections 30, a transfer mechanism 40, a removal section 50, a buffer unit BU, a first transport device CTC, a second transport device WTR, a plurality of substrate processing devices 100, and a control device 180.
複數個基板處理裝置100具備第1基板處理裝置100A、第2基板處理裝置100B、及第3基板處理裝置100C。第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C排列配置於一方向上。例如,第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C與第1搬送裝置CTC之搬送路徑相鄰,自第1搬送裝置CTC之搬送路徑附近,依序配置第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C。 The plurality of substrate processing apparatuses 100 include a first substrate processing apparatus 100A, a second substrate processing apparatus 100B, and a third substrate processing apparatus 100C. The first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are arranged in a row in one direction. For example, the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are adjacent to the transport path of the first transport apparatus CTC, and the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are arranged in sequence near the transport path of the first transport apparatus CTC.
此處,第1基板處理裝置100A~第3基板處理裝置100C貯存包含硫酸及過氧化氫水之處理液。亦可對第1基板處理裝置100A~第3基板處理裝置100C各者,投入進行過不同處理之基板W。 Here, the first substrate processing device 100A to the third substrate processing device 100C store a processing solution including sulfuric acid and hydrogen peroxide. The first substrate processing device 100A to the third substrate processing device 100C can also be fed with substrates W that have undergone different processing.
由基板處理裝置100處理之基板W自投入部20搬入。投入部20包含複數個載置台22。由基板處理裝置100處理後之基板W自移出部50搬出。移出部50包含複數個載置台52。 The substrate W processed by the substrate processing device 100 is carried in from the loading section 20. The loading section 20 includes a plurality of loading tables 22. The substrate W processed by the substrate processing device 100 is carried out from the unloading section 50. The unloading section 50 includes a plurality of loading tables 52.
投入部20中載置收納有基板W之收納部30。載置於投入部20之收納部30收納未進行基板處理裝置100之處理之基板W。此處,2個收納部30分別載置於2個載置台22。 The storage section 30 containing the substrate W is placed in the input section 20. The storage section 30 placed in the input section 20 stores the substrate W that has not been processed by the substrate processing device 100. Here, two storage sections 30 are placed on two stages 22 respectively.
複數個收納部30各者收納複數個基板W。各基板W以水平姿勢收納於收納部30。收納部30例如為FOUP(Front Opening Unified Pod:前開式晶片傳送盒)。 Each of the plurality of storage sections 30 stores a plurality of substrates W. Each substrate W is stored in the storage section 30 in a horizontal position. The storage section 30 is, for example, a FOUP (Front Opening Unified Pod).
載置於移出部50之收納部30收納由基板處理裝置100處理後之基板W。移出部50包含複數個載置台52。2個收納部30分別載置於2個載置台52上。移出部50將已處理之基板W收納於收納部30,連同收納部30一起移出。 The storage section 30 placed on the removal section 50 stores the substrate W processed by the substrate processing device 100. The removal section 50 includes a plurality of loading tables 52. Two storage sections 30 are placed on two loading tables 52 respectively. The removal section 50 stores the processed substrate W in the storage section 30 and removes it together with the storage section 30.
緩衝單元BU與投入部20及移出部50相鄰配置。緩衝單元BU將載置 於投入部20之收納部30連同基板W一起提入內部,且將收納部30載置於架子(未圖示)。又,緩衝單元BU接收已處理之基板W將其收納於收納部30,且將收納部30載置於架子。於緩衝單元BU內,配置有交接機構40。 The buffer unit BU is arranged adjacent to the input part 20 and the removal part 50. The buffer unit BU lifts the storage part 30 placed in the input part 20 together with the substrate W, and places the storage part 30 on a shelf (not shown). In addition, the buffer unit BU receives the processed substrate W and stores it in the storage part 30, and places the storage part 30 on a shelf. A handover mechanism 40 is arranged in the buffer unit BU.
交接機構40於投入部20及移出部50與架子之間交接收納部30。又,交接機構40對第1搬送裝置CTC進行僅基板W之交接。即,交接機構40對第1搬送裝置CTC進行一組基板W之交接。 The handover mechanism 40 delivers the receiving section 30 between the input section 20 and the removal section 50 and the rack. In addition, the handover mechanism 40 delivers only the substrate W to the first conveying device CTC. That is, the handover mechanism 40 delivers a group of substrates W to the first conveying device CTC.
第1搬送裝置CTC於自交接機構40接收到未處理之複數塊基板W組後,將複數塊基板W之姿勢自水平姿勢轉換為垂直姿勢,並將複數塊基板W移交給第2搬送裝置WTR。又,第1搬送裝置CTC於自第2搬送裝置WTR接收到已處理之複數塊基板W組後,將複數塊基板W之姿勢自垂直姿勢轉換為水平姿勢,並將基板W組移交給交接機構40。 After receiving the unprocessed plurality of substrates W from the handover mechanism 40, the first conveyor CTC changes the posture of the plurality of substrates W from the horizontal posture to the vertical posture, and transfers the plurality of substrates W to the second conveyor WTR. In addition, after receiving the processed plurality of substrates W from the second conveyor WTR, the first conveyor CTC changes the posture of the plurality of substrates W from the vertical posture to the horizontal posture, and transfers the substrates W to the handover mechanism 40.
第2搬送裝置WTR可沿基板處理系統10之長度方向,自第3基板處理裝置100C移動至第2基板處理裝置100B。第2搬送裝置WTR可將基板W組搬入及搬出至第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C。 The second transport device WTR can move from the third substrate processing device 100C to the second substrate processing device 100B along the length direction of the substrate processing system 10. The second transport device WTR can move the substrate W group into and out of the first substrate processing device 100A, the second substrate processing device 100B and the third substrate processing device 100C.
控制裝置180控制基板處理系統10之各種動作。詳細而言,控制裝置180控制交接機構40、第1搬送裝置CTC、第2搬送裝置WTR、及基板處理裝置100。 The control device 180 controls various operations of the substrate processing system 10. Specifically, the control device 180 controls the transfer mechanism 40, the first transport device CTC, the second transport device WTR, and the substrate processing device 100.
控制裝置180包含控制部182及記憶部184。控制部182具有處理器。控制部182例如具有中央處理運算器。或,控制部182亦可具有泛用運算器。 The control device 180 includes a control unit 182 and a memory unit 184. The control unit 182 has a processor. The control unit 182 has, for example, a central processing unit. Alternatively, the control unit 182 may also have a general-purpose computer.
記憶部184記憶資料及電腦程式。資料包含製程資料。製程資料包含顯示複數個製程之資訊。複數個製程各者規定基板W之處理內容及處理順序。 The memory unit 184 stores data and computer programs. The data includes process data. The process data includes information showing a plurality of processes. Each of the plurality of processes specifies the processing content and processing sequence of the substrate W.
記憶部184包含主記憶裝置及輔助記憶裝置。主記憶裝置例如為半導體記憶體。輔助記憶裝置例如為半導體記憶體及/或硬碟。記憶部184亦可包含可移除媒體。記憶部184相當於非暫時性電腦可讀取記憶媒體之一例。 The memory unit 184 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk. The memory unit 184 may also include a removable medium. The memory unit 184 is equivalent to an example of a non-temporary computer-readable memory medium.
記憶部184中記憶有已預設順序之電腦程式。基板處理裝置100依照電腦程式所規定之順序而動作。控制部182執行記憶部184所記憶之電腦程式,而執行基板處理動作。控制部182之處理器藉由執行記憶於記憶部184之電腦程式,而控制交接機構40、第1搬送裝置CTC、第2搬送裝置WTR、及基板處理裝置100。 The memory unit 184 stores a computer program with a preset sequence. The substrate processing device 100 operates according to the sequence specified by the computer program. The control unit 182 executes the computer program stored in the memory unit 184 to perform substrate processing operations. The processor of the control unit 182 controls the transfer mechanism 40, the first transport device CTC, the second transport device WTR, and the substrate processing device 100 by executing the computer program stored in the memory unit 184.
以上,已一面參考圖式一面說明本發明之實施形態。但,本發明不限於上述實施形態,可於不脫離其主旨之範圍內以各種態樣實施。又,可藉由適當組合上述實施形態所揭示之複數個構成要件,而形成各種發明。例如,亦可自實施形態所示之所有構成要件中刪除若干構成要件。再者, 亦可適當組合跨及不同實施形態之構成要件。為容易理解,圖式以各個構成要件為主體模式性顯示,圖示之各構成要件之厚度、長度、個數、間隔等係為便於製作圖式而作,有與實際不同之情形。又,上述實施形態所示之各構成要件之材質、形狀、尺寸等為一例,無特別限定,可於實質上不脫離本發明之效果之範圍內進行各種變更。 The above has been described with reference to the drawings while explaining the implementation forms of the present invention. However, the present invention is not limited to the above implementation forms and can be implemented in various forms without departing from the scope of its main purpose. In addition, various inventions can be formed by appropriately combining multiple components disclosed in the above implementation forms. For example, some components can be deleted from all the components shown in the implementation forms. Furthermore, components across different implementation forms can also be appropriately combined. For easy understanding, the drawings are schematically displayed with each component as the main body. The thickness, length, number, spacing, etc. of each component shown in the drawings are made for the convenience of making the drawings, and there are situations that are different from the actual ones. In addition, the materials, shapes, dimensions, etc. of the various components shown in the above-mentioned implementation forms are only examples and are not particularly limited. Various changes can be made within the scope of the effects of the present invention.
本發明適宜用於基板處理裝置及基板處理方法。 The present invention is suitable for use in substrate processing devices and substrate processing methods.
S10,S20,S30,S40,S50A,S50B:步驟 S10,S20,S30,S40,S50A,S50B: Steps
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