CN116889994A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN116889994A
CN116889994A CN202310363079.3A CN202310363079A CN116889994A CN 116889994 A CN116889994 A CN 116889994A CN 202310363079 A CN202310363079 A CN 202310363079A CN 116889994 A CN116889994 A CN 116889994A
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CN
China
Prior art keywords
storage tank
substrate
rinse liquid
phosphoric acid
rinse
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Pending
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CN202310363079.3A
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Chinese (zh)
Inventor
高桥朋宏
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication of CN116889994A publication Critical patent/CN116889994A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention provides a substrate processing apparatus and a substrate processing method capable of effectively reducing the use amount of phosphoric acid solution used in phosphoric acid processing. A substrate processing apparatus (100) is provided with: a first storage tank (110) for storing phosphoric acid solution; a second storage tank (120) for storing a rinse solution; a substrate holding unit (130) for holding and descending the substrate, and immersing the substrate (W) in the rinse solution in the second storage tank (120); and a rinse solution transfer unit (140) for supplying the rinse solution from the second storage tank (120) to the first storage tank (110), wherein the second storage tank (120) is configured to stop the supply of the rinse solution from the second storage tank (120) to the first storage tank (110) during a period subsequent to a specific period of the rinse solution immersion period, the specific period being a specific period of the rinse solution immersion period during which the substrate (W) is immersed in the rinse solution.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method.
Background
A substrate processing apparatus that processes a substrate is known. The substrate processing apparatus is suitable for processing a semiconductor substrate. Typically, a substrate processing apparatus processes a substrate using a processing liquid.
In a batch type processing apparatus for processing a plurality of substrates at once, it has been studied to process the substrates using a predetermined phosphoric acid aqueous solution, silicone, and DIW supplied to a processing tank (patent document 1). In the substrate processing apparatus of patent document 1, in order to suppress clogging of the liquid discharge pipe, the liquid received by the liquid receiving portion is discharged to an external discharge pipe provided outside via a liquid receiving portion discharge pipe.
Patent document 1: JP-A2021-64746.
In the substrate processing apparatus of patent document 1, a predetermined phosphoric acid aqueous solution, silicon, and DIW are supplied to a processing tank. On the other hand, patent document 1 does not study reduction of the amount of a predetermined liquid to be supplied to a treatment tank.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can effectively reduce the amount of phosphoric acid solution used in phosphoric acid processing.
According to one aspect of the present invention, a substrate processing apparatus includes: a first storage tank for storing phosphoric acid solution; a second storage tank for storing a rinse solution; a substrate holding unit configured to hold a substrate and descend, and to dip the substrate in the rinse liquid in the second storage tank; and a rinse liquid transfer unit configured to supply the rinse liquid in the second storage tank to the first storage tank in a specific period among rinse liquid immersion periods in which the substrate is immersed in the rinse liquid in the second storage tank, and to stop the supply of the rinse liquid in the second storage tank in a period subsequent to the specific period among the rinse liquid immersion periods.
In one embodiment, the substrate processing apparatus further includes a circulation pipe for circulating the phosphoric acid solution in the first storage tank so as to flow out from the first storage tank and return the phosphoric acid solution to the first storage tank, and the rinse solution transfer unit supplies the rinse solution in the second storage tank to the first storage tank via the circulation pipe.
In one embodiment, the substrate processing apparatus further includes: a phosphoric acid supply unit configured to supply phosphoric acid to the first storage tank; a diluent supply unit configured to supply a diluent to the first storage tank; and a rinse liquid supply unit configured to supply rinse liquid to the second storage tank.
In one embodiment, the substrate processing apparatus further includes a heater for heating the phosphoric acid liquid flowing through the circulation pipe, wherein the rinse liquid supply unit heats the rinse liquid before the specific period and supplies the rinse liquid to the second storage tank, and wherein the rinse liquid is supplied to the second storage tank after the specific period without heating the rinse liquid.
In one embodiment, the rinse liquid transfer portion includes a storage tank that stores at least a part of the rinse liquid in the second storage tank for the specific period.
In one embodiment, the substrate processing apparatus further includes a temperature adjustment tank disposed in the circulation pipe, and the storage tank is disposed adjacent to the temperature adjustment tank.
According to another aspect of the present invention, a substrate processing method includes: immersing the substrate in the phosphoric acid solution stored in the first storage tank; immersing the substrate in the rinse solution stored in the second storage tank; a transfer step of supplying the rinse solution to the second storage tank in a specific period among rinse solution immersion periods in which the substrate is immersed in the rinse solution; and a diversion stopping step of stopping supply of the rinse liquid to the first storage tank in a period subsequent to the specific period among the rinse liquid immersion periods.
In one embodiment, the substrate processing method further includes a step of circulating the phosphoric acid liquid through a circulation pipe that flows the phosphoric acid liquid in the first storage tank out of the first storage tank and returns the phosphoric acid liquid to the first storage tank, and the transferring step supplies the rinse liquid in the second storage tank to the first storage tank through the circulation pipe.
In one embodiment, the substrate processing method further includes a step of supplying phosphoric acid to the first storage tank; a step of supplying a diluent to the first storage tank; and a step of supplying a rinse liquid to the second storage tank.
In one embodiment, the substrate processing method further includes a step of heating the phosphoric acid liquid flowing through the circulation pipe, wherein in the step of supplying the rinse liquid, the rinse liquid is heated before the specific period and supplied to the second storage tank, and the rinse liquid is supplied to the second storage tank after the specific period without being heated.
In one embodiment, the transferring step includes a step of storing the rinse liquid in the second storage tank for the specific period.
In one embodiment, the substrate processing method further includes a step of storing the phosphoric acid solution flowing through the circulation pipe in a temperature adjustment tank, and the storage tank is disposed adjacent to the temperature adjustment tank.
According to the present invention, the amount of phosphoric acid and the diluent used in the phosphoric acid treatment can be effectively reduced.
Drawings
Fig. 1 is a schematic perspective view of a substrate processing apparatus according to the present embodiment.
Fig. 2 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 3 is a schematic block diagram of the substrate processing apparatus according to the present embodiment.
Fig. 4A to 4E are schematic views of the substrate processing apparatus according to the present embodiment.
Fig. 5 is a flowchart of a substrate processing method according to the present embodiment.
Fig. 6 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 7 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 8 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 9 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 10 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 11 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 12 is a schematic view of the substrate processing apparatus according to the present embodiment.
Fig. 13A to 13D are schematic views of the substrate processing apparatus according to the present embodiment.
Fig. 14A to 14C are schematic views of the substrate processing apparatus according to the present embodiment.
Fig. 15 is a schematic view of a substrate processing system including the substrate processing apparatus according to the present embodiment.
Description of the reference numerals
100. Substrate processing apparatus
110. First storage tank
112. Phosphoric acid supply unit
114. Dilution liquid supply unit
120. A second storage tank
122. Flushing liquid supply unit
130. Substrate holding portion
140. Flushing liquid transfer part
W substrate
Detailed Description
Embodiments of a substrate processing apparatus and a substrate processing method according to the present application are described below with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals, and description thereof will not be repeated. In the present specification, for the purpose of facilitating understanding of the present application, the X-axis, the Y-axis, and the Z-axis are described as being orthogonal to each other. Typically, the X-axis and Y-axis are parallel to the horizontal direction and the Z-axis is parallel to the vertical direction.
An embodiment of a substrate processing apparatus 100 according to the present application is described with reference to fig. 1. Fig. 1 is a schematic perspective view of a substrate processing apparatus 100 according to the present embodiment.
The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W such that at least one of etching, surface treatment, oxidation treatment, property imparting, processing film formation, film removal, and cleaning is performed on the substrate W.
The substrate W is thin plate-shaped. Typically, the substrate W is a thin substantially disk-shaped substrate. The substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.
The substrate processing apparatus 100 is a batch type substrate processing apparatus. The substrate processing apparatus 100 processes a plurality of substrates W at once. Typically, the substrate processing apparatus 100 processes a plurality of substrates W in a batch unit. For example, one lot is constituted of 25 substrates W. The single batch may be composed of 50 substrates W.
As shown in fig. 1, the substrate processing apparatus 100 includes a first storage tank 110, a second storage tank 120, and a substrate holding unit 130. Here, the second storage tank 120 is disposed adjacent to the first storage tank 110. However, the second holding tank 120 may be disposed apart from the first holding tank 110.
The first storage tank 110 stores phosphoric acid solution. The substrate W is subjected to phosphoric acid treatment by immersing the substrate W in the phosphoric acid solution in the first storage tank 110.
The second storage tank 120 stores the rinse solution. The substrate W is immersed in the rinse solution in the second storage tank 120, thereby performing a rinse process on the substrate W.
The rinse solution may contain any of Deionized Water (DIW), carbonated Water, electrolytic ion Water, ozone Water, ammonia Water, hydrochloric acid Water of a diluted concentration (for example, about 10ppm to 100 ppm), and reduced Water (hydrogen Water).
The substrate holding portion 130 holds the substrate W. The substrate holding portion 130 moves while holding the substrate W. For example, the substrate holding portion 130 is lowered into the first storage tank 110 while holding the substrate W. Thereby, the substrate W is immersed in the phosphoric acid solution in the first storage tank 110.
The substrate holding portion 130 is lowered into the second storage tank 120 while holding the substrate W. Thereby, the substrate W is immersed in the rinse solution in the second storage tank 120.
The substrate holding portion 130 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding portion 130 is parallel to the Y direction. The plurality of substrates W are arranged in a row in the Y direction. The plurality of substrates W are arranged substantially in parallel in the horizontal direction. The normal lines of the substrates W extend in the Y direction, and the substrates W extend substantially parallel to the X direction and the Z direction.
Typically, the substrate holding portion 130 holds a plurality of substrates W together. Here, the substrate holding portion 130 holds substrates W aligned in the Y direction. The substrate holding portion 130 moves the substrate W while holding the substrate W. For example, the substrate holding portion 130 moves vertically upward or vertically downward while holding the substrate W.
Specifically, the substrate holding portion 130 includes an elevator. The substrate holding unit 130 moves vertically upward or vertically downward while holding a plurality of substrates W. By moving the substrate holding portion 130 vertically downward, the plurality of substrates W held by the substrate holding portion 130 are immersed in the phosphoric acid solution stored in the first storage tank 110. The substrate holding portion 130 can dip the plurality of substrates W in the phosphoric acid solution stored in the first storage tank 110 at once.
In addition, the substrate holding part 130 may be moved in the horizontal direction. For example, the substrate holding portion 130 moves from above the first storage tank 110 to above the second storage tank 120. The substrate holding portion 130 may be moved from above the second storage tank 120 to above the first storage tank 110.
The plurality of substrates W held by the substrate holding portion 130 are immersed in the rinse liquid stored in the second storage tank 120 by moving the substrate holding portion 130 vertically downward above the second storage tank 120. The substrate holding unit 130 can dip the plurality of substrates W in the rinse solution stored in the second storage tank 120.
The substrate W may be immersed in the phosphoric acid solution in a state of being held in the same substrate holding portion 130, and then immersed in the rinse solution. Alternatively, the substrate W may be immersed in the phosphoric acid solution in a state of being held by one of the substrate holding portions 130, and then replaced with another substrate holding portion 130, and then immersed in the rinse solution. In this way, the substrate W is immersed in the phosphoric acid solution and the rinse solution, and the substrate W may be immersed in the rinse solution by different substrate holding units 130.
The first storage tank 110 stores phosphoric acid solution for processing the substrate W. The phosphoric acid solution is produced by mixing phosphoric acid with a diluent. Phosphoric acid and a diluent may be supplied to the first storage tank 110, respectively.
In one example, phosphoric acid and diluent are mixed in the first holding tank 110. Thus, in the first storage tank 110, a phosphoric acid solution obtained by mixing phosphoric acid and a diluent is produced.
The substrate holding portion 130 includes a main body plate 132 and a holding bar 134. The main body plate 132 extends in the vertical direction (Z direction). The holding bar 134 extends in the horizontal direction (Y direction) from one main surface of the main body plate 132. In fig. 1, three holding bars 134 extend in the horizontal direction from one main surface of the main body plate 132. The plurality of substrates W are held in a standing posture (vertical posture) by the plurality of holding bars 134 while being arranged at predetermined intervals.
The substrate holding part 130 may further include a moving unit 136. The moving unit 136 moves up and down the main body plate 132 between a lower position where the plurality of substrates W held by the holding bars 134 are located in the first storage tank 110 and an upper position (a position shown in fig. 1) where the plurality of substrates W held by the holding bars 134 are located above the first storage tank 110. Accordingly, the main body plate 132 is moved to the lower position by the moving unit 136, and the plurality of substrates W held by the holding bars 134 are immersed in the phosphoric acid solution in the first storage tank 110.
The plurality of substrates W are held by the plurality of holding bars 134. Specifically, the lower edge of each substrate W is brought into contact with the plurality of holding bars 134, whereby the plurality of substrates W are held in the standing posture (vertical posture) by the plurality of holding bars 134. More specifically, the plurality of substrates W held by the substrate holding portion 130 are arranged at intervals in the Y direction. Accordingly, the plurality of substrates W are arranged in a row in the Y direction. The plurality of substrates W are held by the substrate holding portion 130 in a posture substantially parallel to the XZ plane.
The moving unit 136 lifts and lowers the body plate 132. The moving unit 136 moves vertically upward or vertically downward by lifting the main body plate 132, and the holding bars 134 in a state where the plurality of substrates W are held. The moving unit 136 has a driving source and a lifting mechanism, and the lifting mechanism is driven by the driving source to raise and lower the main body plate 132. The drive source includes, for example, a motor. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.
More specifically, the moving unit 136 moves up and down the main body plate 132 between the processing position and the retracted position (position shown in fig. 1). When the main body plate 132 moves downward vertically (Z direction) to the processing position while holding the plurality of substrates W, the plurality of substrates W are put into the first storage tank 110. Specifically, the plurality of substrates W held in the substrate holding portion 130 move into the first storage groove 110. As a result, the plurality of substrates W are immersed in the phosphoric acid solution in the first storage tank 110 to be subjected to the phosphoric acid treatment. On the other hand, as shown in fig. 1, when the main body plate 132 is moved to the retracted position, the plurality of substrates W held by the holding bars 134 are moved upward of the first storage tank 110, and pulled up from the phosphoric acid solution.
The moving unit 136 may move the main body plate 132 in the horizontal direction. In this case, the moving unit 136 moves the main body plate 132 and the holding bar 134 between the upper position (the position shown in fig. 1) of the first storage tank 110 and the upper position of the second storage tank 120. When the substrate holding portion 130 moves downward vertically (Z direction) to the processing position while holding the plurality of substrates W, the plurality of substrates W are put into the second storage tank 120. Specifically, the plurality of substrates W held in the substrate holding portion 130 move into the second storage groove 120. As a result, the plurality of substrates W are immersed in the rinse solution in the second storage tank 120 to perform the rinse process. When the main body plate 132 is moved to the retracted position, the plurality of substrates W held by the holding bars 134 are moved upward in the second storage tank 120, and pulled up from the rinse liquid.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 and 2. Fig. 2 is a schematic view of the substrate processing apparatus 100 according to the present embodiment.
As shown in fig. 2, the substrate processing apparatus 100 includes a first storage tank 110, a second storage tank 120, and a substrate holding unit 130. The first storage tank 110 stores phosphoric acid solution. The second storage tank 120 stores the rinse solution.
As described above, the first storage tank 110 stores phosphoric acid solution. The phosphoric acid liquid is a mixture of phosphoric acid and a diluent. The concentration (mass concentration) of phosphoric acid in the phosphoric acid solution is 80% to 95%.
The substrate holding portion 130 moves while holding the substrate W. The substrate W is immersed in the phosphoric acid solution stored in the first storage tank 110 by being lowered into the phosphoric acid solution stored in the first storage tank 110 in a state where the substrate holding portion 130 holds the substrate W. Thereby, the substrate W is subjected to phosphoric acid treatment.
In addition, the substrate W is immersed in the rinse solution stored in the second storage tank 120 by being lowered into the rinse solution stored in the second storage tank 120 in a state where the substrate holding portion 130 holds the substrate W. Thereby, the substrate W is rinsed.
The substrate processing apparatus 100 includes a phosphoric acid supply unit 112 and a diluent supply unit 114. The phosphoric acid supply unit 112 supplies phosphoric acid to the first storage tank 110.
The diluent supply unit 114 supplies the diluent to the first storage tank 110. The diluent is used to dilute phosphoric acid. The diluent may contain Deionized Water (DIW), carbonated Water, electrolytic ion Water, ozone Water, ammonia Water, hydrochloric acid Water of a diluted concentration (for example, about 10ppm to 100 ppm) or reduced Water (hydrogen Water). The diluent preferably contains at least a part of the components in the rinse liquid. The diluent may be composed of the same components as the rinse solution.
In one example, phosphoric acid and diluent are mixed in the first holding tank 110. Thus, in the first storage tank 110, a phosphoric acid solution obtained by mixing phosphoric acid and a diluent is produced. The phosphoric acid supply unit 112 may supply the phosphoric acid solution, in which the phosphoric acid and the diluent are mixed, to the first storage tank 110, and the concentration of the phosphoric acid solution may be adjusted by the diluent supplied from the diluent supply unit 114.
The substrate processing apparatus 100 further includes a rinse liquid supply unit 122. The rinse liquid supply unit 122 supplies rinse liquid to the second storage tank 120.
The phosphoric acid supply unit 112 includes a pipe 112a and a valve 112b. The phosphoric acid is discharged from one end of the pipe 112a to the first storage tank 110. The pipe 112a is connected to a phosphoric acid supply source. A valve 112b is disposed in the pipe 112 a. The supply of phosphoric acid to the first holding tank 110 can be controlled by the valve 112b. When the valve 112b is opened, phosphoric acid passing through the pipe 112a is supplied to the first storage tank 110. In the first storage tank 110, phosphoric acid is mixed with the phosphoric acid solution of the first storage tank 110.
The diluent supply unit 114 includes a pipe 114a and a valve 114b. The diluent is discharged from one end of the pipe 114a to the first storage tank 110. The pipe 114a is connected to a diluent supply source. A valve 114b is disposed in the pipe 114 a. The supply of the diluent to the first reservoir 110 can be controlled by the valve 114b. When the valve 114b is opened, the diluent is supplied to the first storage tank 110 through the pipe 114 a. In the first storage tank 110, the diluent is mixed with the phosphoric acid solution in the first storage tank 110.
The rinse liquid supply unit 122 includes a pipe 122a and a valve 122b. The rinse liquid is discharged from one end of the pipe 122a to the second storage tank 120. The piping 122a is connected to a rinse liquid supply source. A valve 122b is disposed in the pipe 122 a. The supply of the rinse liquid to the second storage tank 120 can be controlled by the valve 122b. When the valve 122b is opened under the control of the control device 180, the rinse liquid passing through the pipe 122a is supplied to the second storage tank 120.
In the present embodiment, the substrate processing apparatus 100 further includes a rinse liquid transfer portion 140 in addition to the first storage tank 110, the second storage tank 120, and the substrate holding portion 130. The rinse liquid transfer portion 140 transfers the rinse liquid in the second storage tank 120. Specifically, the rinse liquid transfer unit 140 transfers the rinse liquid in the second storage tank 120 to supply the rinse liquid to the first storage tank 110.
More specifically, the rinse solution transfer unit 140 supplies the rinse solution in the second storage tank 120 to the first storage tank 110 during a specific period of the rinse solution immersion period in which the substrate W is immersed in the rinse solution in the second storage tank 120. The rinse solution in the second storage tank 120 contains a phosphoric acid solution component flowing out from the substrate W. For example, the phosphoric acid concentration of the rinse solution in the second storage tank 120 is 0.5% or more and 5% or less. By transferring the rinse liquid in the second storage tank 120 to the first storage tank 110 and supplying the same, the phosphoric acid liquid component flowing out of the substrate W can be utilized in the first storage tank 110. Further, by transferring the rinse liquid in the second storage tank 120 to the first storage tank 110, the phosphoric acid liquid in the first storage tank 110 can be replenished.
The rinse liquid transfer unit 140 stops the supply of the rinse liquid to the second storage tank 120 during a period subsequent to a specific period among the rinse liquid immersion periods to the first storage tank 110. The amount of the phosphoric acid component of the rinse solution flowing from the substrate W to the second storage tank 120 decreases with time. Therefore, by stopping the transfer of the rinse liquid from the second storage tank 120 to the first storage tank 110, an excessive decrease in the concentration of the phosphoric acid liquid in the first storage tank 110 can be suppressed.
The rinse liquid transfer unit 140 includes a pipe 141, a valve 142, and a pump 143. The rinse liquid in the second storage tank 120 is supplied to the first storage tank 110 through the pipe 141. One end of the pipe 141 is connected to the second storage tank 120, and the other end of the pipe 141 faces the first storage tank 110. The pump 143 sends the rinse liquid to the first storage tank 110 through the pipe 141. Therefore, the rinse liquid flowing through the pipe 141 is discharged from the other end of the pipe 141 to the first storage tank 110.
A valve 142 and a pump 143 are disposed in the pipe 141. Typically, valve 142 is disposed downstream of pump 143. The supply of the rinse liquid to the first storage tank 110 can be controlled by the valve 142. When the valve 142 is opened, the rinse liquid passing through the pipe 141 is supplied to the first storage tank 110. In the first storage tank 110, the rinse liquid is mixed with the phosphoric acid liquid in the first storage tank 110. When the valve 142 is closed, the supply of the rinse liquid to the first storage tank 110 is stopped without passing through the pipe 141.
It is preferable that a filter is disposed in the pipe 141. Impurities can be removed from the rinse liquid flowing through the pipe 141 by the filter. It is preferable that the filter is disposed upstream of the valve 142 and the pump 143.
Next, an embodiment of a substrate processing apparatus 100 according to the present invention will be described with reference to fig. 1 to 3. Fig. 3 is a schematic block diagram of the substrate processing apparatus 100 according to the present embodiment.
As shown in fig. 3, the control device 180 includes a control unit 182 and a storage unit 184. The control unit 182 controls the operations of the respective units of the substrate processing apparatus 100.
The control portion 182 includes a processor. The processor has, for example, a central processing unit (Central Processing Unit: CPU). Alternatively, the processor may have a general purpose operator.
The storage section 184 stores data and computer programs. The storage section 184 includes a main storage device and an auxiliary storage device. The main memory device is, for example, a semiconductor memory. The secondary storage device is, for example, a semiconductor memory and/or a hard disk drive. The storage 184 may include removable media. The processor of the control section 182 executes the computer program stored in the storage section 184 to execute the substrate processing method.
The control unit 182 controls the phosphoric acid supply unit 112, the diluent supply unit 114, the rinse solution supply unit 122, the substrate holding unit 130, and the rinse solution transfer unit 140 according to a predetermined program. In detail, the control unit 182 controls the operation of the moving unit 136. In addition, the control portion 182 controls the opening and closing operations of the valves 112b, 114b, 122b, and 142. Further, the control unit 182 controls driving of the pump 143.
The control portion 182 moves the body plate 132 by controlling the moving unit 136. For example, the control unit 182 can move (raise and lower) the main body plate 132 in the vertical direction by the moving unit 136. The control unit 182 can move the main body plate 132 in the horizontal direction by the moving unit 136.
The control unit 182 can control the valve 112b of the phosphoric acid supply unit 112 to switch the state of the valve 112b between an open state and a closed state. Specifically, the control unit 182 controls the valve 112b of the phosphoric acid supply unit 112 to open the valve 112b, thereby allowing the phosphoric acid flowing through the pipe 112a to pass therethrough. The control unit 182 can stop the supply of phosphoric acid flowing through the pipe 112a by controlling the valve 112b of the phosphoric acid supply unit 112 to close the valve 112 b. The control unit 182 can also control the valve 114b of the diluent supply unit 114 and the valve 122b of the rinse supply unit 122 in the same manner.
The control unit 182 controls the valve 142 of the rinse liquid transfer unit 140 to switch the state of the valve 142 between the open state and the closed state. The control unit 182 controls the pump 143 of the rinse liquid transfer unit 140 to switch the state of the pump 143 between the driving state and the stopped state. Specifically, the control unit 182 controls the valve 142 and the pump 143 of the rinse liquid transfer unit 140, and sets the valve 142 to an open state and sets the pump 143 to a driving state, whereby the rinse liquid in the second storage tank 120 can be supplied to the first storage tank 110 through the pipe 141. The control unit 182 controls the valve 142 and the pump 143 of the rinse liquid transfer unit 140, and can stop the flow of the rinse liquid in the second storage tank 120 through the pipe 141 and supply the rinse liquid to the first storage tank 110 by closing the valve 142 or stopping the pump 143.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 4E. Fig. 4A to 4E are schematic views of the substrate processing apparatus 100 according to the present embodiment.
As shown in fig. 4A, the first storage tank 110 and the second storage tank 120 are disposed adjacent to each other. As described above, the first storage tank 110 can store phosphoric acid solution, and the second storage tank 120 can store rinse solution. Here, however, both the first and second holding tanks 110 and 120 are empty.
As shown in fig. 4B, the phosphoric acid solution is supplied to the first storage tank 110. For example, the phosphoric acid supply unit 112 supplies phosphoric acid to the first storage tank 110. The diluent supply unit 114 supplies the diluent to the first storage tank 110. In the first storage tank 110, phosphoric acid and a diluent are mixed to produce phosphoric acid solution as a mixed solution. Thereby, the first storage tank 110 stores phosphoric acid solution. Here, the first storage tank 110 stores phosphoric acid solution to a full capacity.
As shown in fig. 4C, the substrate W is immersed in the phosphoric acid solution in the first storage tank 110. For example, the substrate holding portion 130 is lowered in a state where the substrate W is held to impregnate the substrate W into the phosphoric acid solution in the first storage tank 110. Thereby, the substrate W is subjected to phosphoric acid treatment.
In fig. 4B, when the liquid amount of the phosphoric acid solution is large relative to the capacity of the first storage tank 110, a part of the phosphoric acid solution may overflow from the first storage tank 110 due to the impregnation of the substrate W. Even when the substrate W is immersed in the phosphoric acid solution in the first storage tank 110 in fig. 4C, the amount of the phosphoric acid solution supplied to the first storage tank 110 may be adjusted so that a part of the phosphoric acid solution does not overflow from the first storage tank 110.
In addition, the rinse solution may be supplied to the second storage tank 120 during the period in which the substrate W is immersed in the phosphoric acid solution in the first storage tank 110. For example, the rinse liquid supply unit 122 supplies rinse liquid to the second storage tank 120.
As shown in fig. 4D, the substrate W is immersed in the rinse solution in the second storage tank 120. For example, the substrate holding portion 130 pulls up the substrate W from the phosphoric acid solution in the first storage tank 110 and moves in the horizontal direction to above the second storage tank 120. Thereafter, the substrate holding portion 130 is lowered in a state where the substrate W is held, so that the substrate W is immersed in the rinse solution in the second storage tank 120. Thereby, the substrate W is rinsed. The substrate W is immersed in the rinse solution in the second storage tank 120 for a predetermined period of time. In the present specification, the period during which the substrate W is immersed in the rinse solution in the second storage tank 120 may be referred to as a rinse solution immersion period.
Since the substrate holding portion 130 pulls up the substrate W from the phosphoric acid solution in the first storage tank 110, the phosphoric acid solution in the first storage tank 110 is reduced.
In the present embodiment, the rinse solution in the second storage tank 120 is transferred to the first storage tank 110 in a specific period among the rinse solution immersion periods. For example, the rinse liquid transfer portion 140 supplies the rinse liquid in the second storage tank 120 to the first storage tank 110. The control unit 182 can supply the rinse liquid in the second storage tank 120 to the first storage tank 110 through the pipe 141 by opening the valve 142 and driving the pump 143.
When the substrate W is immersed in the rinse solution in the second storage tank 120, the phosphoric acid solution component flows out from the substrate W that has been previously phosphoric-treated into the rinse solution in the second storage tank 120. Therefore, by transferring the rinse liquid in the second storage tank 120 to the first storage tank 110, the phosphoric acid liquid component flowing out of the substrate W can be utilized in the first storage tank 110. Further, by transferring the rinse liquid in the second storage tank 120 to the first storage tank 110, even when the amount of the phosphoric acid liquid in the first storage tank 110 is reduced, the phosphoric acid liquid in the first storage tank 110 can be effectively replenished.
As shown in fig. 4E, transfer of the rinse solution to the first storage tank 110 and the transfer of the rinse solution to the second storage tank 120 are stopped in a period subsequent to a specific period of the rinse solution dipping period. For example, the rinse liquid transfer portion 140 stops the supply of the rinse liquid from the second storage tank 120 to the first storage tank 110. In one example, the control unit 182 stops the flow of the rinse liquid in the second storage tank 120 through the pipe 141 and supplies the rinse liquid to the first storage tank 110 by closing the valve 142.
The amount of the phosphoric acid liquid component in the rinse liquid flowing out from the substrate W to the second storage tank 120 decreases with time. Therefore, by stopping the transfer of the rinse solution from the second storage tank 120 to the first storage tank 110, it is possible to suppress an excessive decrease in the concentration of the phosphoric acid solution in the first storage tank 110 due to the rinse solution from the second storage tank 120.
According to the present embodiment, the amount of phosphoric acid solution used in the phosphoric acid treatment can be effectively reduced. By transferring the rinse liquid in the second storage tank 120 to the first storage tank 110, the phosphoric acid liquid component flowing out of the substrate W can be used in the first storage tank 110. Further, by transferring the rinse liquid in the second storage tank 120 to the first storage tank 110, even when the amount of the phosphoric acid liquid in the first storage tank 110 is reduced, the phosphoric acid liquid in the first storage tank 110 can be effectively replenished. Further, by stopping the transfer of the rinse solution from the second storage tank 120 to the first storage tank 110, it is possible to suppress an excessive decrease in the concentration of the phosphoric acid solution in the first storage tank 110 due to the rinse solution from the second storage tank 120.
Next, a substrate processing method according to the present embodiment will be described with reference to fig. 1 to 5. Fig. 5 is a flowchart of a substrate processing method according to the present embodiment.
As shown in fig. 5, in step S10, phosphoric acid solution is supplied to the first storage tank 110. For example, the phosphoric acid supply unit 112 supplies phosphoric acid to the first storage tank 110. The diluent supply unit 114 supplies the diluent to the first storage tank 110. The phosphoric acid and the diluent are mixed in the first holding tank 110 to produce a phosphoric acid solution.
In step S12, the substrate W is immersed in the phosphoric acid solution in the first storage tank 110. The control unit 182 controls the substrate holding unit 130 so that the substrate holding unit 130 is lowered into the first storage tank 110 while the substrate W is held. Thus, the substrate W is immersed in the phosphoric acid solution in the first storage tank 110, and the phosphoric acid treatment of the substrate W is started.
In the phosphoric acid treatment, a phosphoric acid solution having a predetermined concentration may be supplied to the first storage tank 110. For example, the phosphoric acid supply unit 112 may supply phosphoric acid to the first storage tank 110, and the diluent supply unit 114 may supply diluent to the first storage tank 110.
In step S14, the substrate W is immersed in the phosphoric acid solution in the first storage tank 110. The control unit 182 controls the substrate holding unit 130 so that the substrate holding unit 130 is lifted up from the first storage tank 110 while holding the substrate W.
In step S20, a rinse solution is supplied to the second storage tank 120. For example, the rinse liquid supply unit 122 supplies rinse liquid to the second storage tank 120. It should be noted that step S20 may be performed during step S12 and/or step S14. Alternatively, it may be performed before step S12 or after step S14.
In step S22, the substrate W is immersed in the rinse solution in the second storage tank 120. The control unit 182 controls the substrate holding unit 130 so that the substrate holding unit 130 is lowered into the second storage tank 120 while holding the substrate W. Thus, the substrate W is immersed in the rinse solution in the second storage tank 120, and the rinse process for the substrate W is started.
In the flushing process, the flushing liquid may be supplied to the second storage tank 120. For example, the rinse liquid supply unit 122 may supply the rinse liquid to the second storage tank 120.
In step S24, the rinse solution in the second storage tank 120 is transferred to the first storage tank 110. The rinse liquid transfer portion 140 transfers the rinse liquid in the second storage tank 120 to the first storage tank 110. In one example, the control unit 182 opens the valve 142, and the rinse liquid in the second storage tank 120 flows through the pipe 141 and is supplied to the first storage tank 110.
In step S26, the transfer of the rinse solution from the second storage tank 120 to the first storage tank 110 is stopped. The rinse liquid transfer portion 140 stops transferring the rinse liquid in the second storage tank 120 to the first storage tank 110. In one example, the control unit 182 stops the flow of the rinse liquid in the second storage tank 120 through the pipe 141 and supplies the rinse liquid to the first storage tank 110 by closing the valve 142.
In step S28, the substrate W is immersed in the rinse solution in the second storage tank 120. The control unit 182 controls the substrate holding unit 130 so that the substrate holding unit 130 is lifted up from the second storage tank 120 while holding the substrate W.
According to the present embodiment, the substrate W is subjected to the phosphoric acid treatment and then the rinse treatment. The rinse solution in the second storage tank 120 is supplied to the first storage tank 110 during a specific period of the rinse solution immersion period, and thereafter, the supply of the rinse solution in the second storage tank 120 to the first storage tank 110 is stopped. Thus, the amount of phosphoric acid solution used in the phosphoric acid treatment can be effectively reduced.
The rinse liquid transfer unit 140 may supply the rinse liquid overflowed from the second storage tank 120 to the first storage tank 110.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 6. Fig. 6 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 6 has the same configuration as that described above with reference to fig. 2, except that the rinse liquid transfer portion 140 receives the rinse liquid overflowed from the second storage tank 120, the pipe 141 is connected to the pipe 114a of the diluent supply portion 114, and the phosphoric acid concentration of the rinse liquid overflowed from the second storage tank 120 is measured, and redundant description is omitted.
As shown in fig. 6, the rinse liquid transfer unit 140 further includes a rinse liquid receiving unit 146 in addition to the pipe 141, the valve 142, and the pump 143. The rinse liquid receiving portion 146 receives the rinse liquid overflowed from the second storage tank 120. For example, when the substrate W is immersed in the rinse solution in the second storage tank 120, the rinse solution receiving unit 146 receives the rinse solution overflowed from the second storage tank 120.
The rinse liquid receiving portion 146 is disposed vertically below the second storage tank 120. The width and length (length in the X-direction and Y-direction) of the rinse liquid receiving portion 146 are preferably larger than the width and length of the second storage tank 120. However, the depth (length in the Z direction) of the rinse liquid receiving portion 146 is preferably smaller than the depth (length in the Z direction) of the second storage tank 120.
The rinse solution received in the rinse solution receiving unit 146 is supplied to the first storage tank 110 via the pipe 141. Here, the pipe 141 of the rinse liquid receiving portion 146 is connected to the pipe 114a of the diluent supply portion 114.
The rinse liquid transfer unit 140 may further include a pipe 148a and a valve 148b. Piping 148a is connected to rinse liquid receiving unit 146 and the waste liquid mechanism. A valve 148b is disposed in the pipe 148 a. When the valve 148b is opened, the rinse liquid passing through the pipe 148a is supplied to the waste liquid mechanism. In this way, the rinse liquid in the rinse liquid receiving portion 146 can be discarded through the pipe 148a and the valve 148b.
When the rinse liquid transfer portion 140 transfers the rinse liquid in the second storage tank 120 to the first storage tank 110, the control portion 182 opens the valve 142 and closes the valve 148b, so that the rinse liquid received by the rinse liquid receiving portion 146 from the second storage tank 120 flows through the pipe 141 and is supplied to the first storage tank 110. After that, when the rinse solution transfer unit 140 stops transferring the rinse solution from the rinse solution receiving unit 146 to the first storage tank 110, the control unit 182 closes the valve 142 and opens the valve 148b, so that the rinse solution from the rinse solution receiving unit 146 flows through the pipe 148a and is discarded.
The rinse solution transfer unit 140 may further include a concentration sensor 149 that can detect the concentration of phosphoric acid contained in the rinse solution. For example, the control unit 182 may determine whether to transfer the rinse solution from the rinse solution receiving unit 146 to the first storage tank 110 based on the detection result of the concentration sensor 149. Typically, when the phosphoric acid concentration in the rinse solution detected by the concentration sensor 149 is higher than the threshold value, the control unit 182 determines to transfer the rinse solution from the rinse solution receiving unit 146 to the first storage tank 110. On the other hand, when the phosphoric acid concentration in the rinse solution detected by the concentration sensor 149 decreases to the threshold value or less, the control unit 182 determines to stop the transfer of the rinse solution from the rinse solution receiving unit 146 to the first storage tank 110.
The concentration sensor 149 measures the phosphoric acid concentration of the rinse solution in the second storage tank 120. For example, the concentration sensor 149 is attached to the rinse liquid receiving portion 146. The concentration sensor 149 measures a value indicating the specific gravity of the rinse solution stored in the rinse solution receiving unit 146. The concentration sensor 149 measures the back pressure of the rinse liquid receiving portion 146.
For example, the tip of the concentration sensor 149 is disposed at a predetermined depth from the liquid surface of the rinse liquid receiving portion 146. In the concentration sensor 149, gas is supplied to the tip of the concentration sensor 149 to form bubbles in the rinse solution receiving section 146. Thus, the hydraulic pressure of the rinse liquid stored in the rinse liquid receiving unit 146 is detected as the air pressure at the distal end portion of the concentration sensor 149 disposed at a predetermined depth from the liquid surface of the rinse liquid receiving unit 146. Nitrogen is generally used as the gas. By measuring the relationship between the gas pressure and the phosphoric acid concentration of the rinse solution in advance and creating a reference table showing the relationship between the gas pressure and the rinse solution in advance, the specific gravity of the rinse solution can be measured from the gas pressure at which bubbles are formed from the gas.
In the above description with reference to fig. 6, the concentration sensor 149 measures the concentration of phosphoric acid contained in the rinse solution received by the rinse solution receiving unit 146, but the present embodiment is not limited thereto. The concentration sensor 149 can measure the concentration of phosphoric acid contained in the rinse solution flowing through the pipe 141. In this case, the rinse liquid transfer portion 140 may not include the rinse liquid receiving portion 146.
In the substrate processing apparatus 100 shown in fig. 6, the rinse liquid transfer portion 140 supplies the rinse liquid received in the rinse liquid receiving portion 146 to the first storage tank 110, but the present embodiment is not limited thereto. The rinse liquid transfer portion 140 may supply the rinse liquid in the second storage tank 120 to the first storage tank 110.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 7. Fig. 7 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 7 has the same configuration as that described above with reference to fig. 6, except that the first storage tank 110 and the second storage tank 120 each have a double-tank structure, and the rinse liquid transfer portion 140 supplies the rinse liquid in the outer tank 120b of the second storage tank 120 to the first storage tank 110, and redundant description is omitted.
As shown in fig. 7, the first storage tank 110 has a double tank structure. The first storage tank 110 has an inner tank 110a and an outer tank 110b. The outer tank 110b surrounds the inner tank 110a. The inner tank 110a and the outer tank 110b each have an upper opening opened upward.
The inner tank 110a is configured to store phosphoric acid solution and to accommodate a plurality of substrates W. The outer tank 110b is provided on an outer side surface of an upper opening of the inner tank 110a. The upper edge of the outer tub 110b is higher than the upper edge of the inner tub 110a.
The inner tank 110a and the outer tank 110b each hold phosphoric acid solution. A plurality of substrates W are put into the inner groove 110a. Specifically, the plurality of substrates W held in the substrate holding portion 130 are put into the inner groove 110a. The substrates W are immersed in the phosphoric acid solution in the inner tank 110a by being put into the inner tank 110a.
The second storage tank 120 has a double tank structure. The second storage tank 120 has an inner tank 120a and an outer tank 120b. The outer tank 120b surrounds the inner tank 120a. The inner and outer slots 120a, 120b each have an upper opening that opens upwardly.
The inner tank 120a is configured to store a rinse solution therein and to accommodate a plurality of substrates W. The outer tank 120b is provided on an outer side surface of an upper opening of the inner tank 120a. The upper edge of the outer tank 120b is higher than the upper edge of the inner tank 120a.
The inner tank 120a and the outer tank 120b store the rinse solution, respectively. A plurality of substrates W are put into the inner groove 120a. Specifically, the plurality of substrates W held in the substrate holding portion 130 are put into the inner groove 120a. The substrates W are immersed in the rinse liquid in the inner tank 120a by being put into the inner tank 120a.
The rinse liquid transfer unit 140 includes a pipe 141, a valve 142, and a pump 143. The rinse liquid in the second storage tank 120 is supplied to the first storage tank 110 through the pipe 141. One end of the pipe 141 is located in the outer groove 120b of the second storage groove 120, and the other end of the pipe 141 is connected to the pipe 114 a. Therefore, the rinse liquid in the second storage tank 120 is supplied to the first storage tank 110 through the pipe 141 and the pipe 114 a.
Piping 141 is connected to piping 148 a. Piping 148a is connected to piping 141 and the waste liquid mechanism. The connection point between the pipe 141 and the pipe 148a is preferably located downstream of the pump 143.
A valve 148b is disposed in the pipe 148 a. When the valve 148b is opened, the rinse liquid passing through the pipe 148a is supplied to the waste liquid mechanism. In this way, the rinse liquid can be discarded from the pipe 148a and the valve 148b.
According to the present embodiment, the rinse solution in the outer tank 120b of the second storage tank 120 can be selectively transferred to the first storage tank 110.
In the substrate processing apparatus 100 shown in fig. 1 to 7, the rinse liquid transferred by the rinse liquid transfer portion 140 can be directly supplied to the first storage tank 110, but the present embodiment is not limited thereto. The rinse solution transferred in the rinse solution transfer portion 140 may be supplied to the first storage tank 110 through a circulation pipe for circulating the phosphoric acid solution in the first storage tank 110.
In the substrate processing apparatus 100 shown in fig. 1 to 7, the rinse liquid supply unit 122 is located above the second storage tank 120, but the present embodiment is not limited thereto.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 8. Fig. 8 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 8 has the same configuration as that described above with reference to fig. 6 or 7, except that the rinse liquid of the second storage tank 120 is supplied to the first storage tank 110 via the circulation pipe for circulating the phosphoric acid liquid of the first storage tank 110, the phosphoric acid liquid of the first storage tank 110 is discharged, and the rinse liquid is supplied from the second storage tank 120, and redundant description is omitted.
As shown in fig. 8, the first storage tank 110 has a double tank structure. The first storage tank 110 has an inner tank 110a and an outer tank 110b. The outer tank 110b surrounds the inner tank 110a. The inner tank 110a and the outer tank 110b each have an upper opening opened upward.
The inner tank 110a is configured to store phosphoric acid solution and to accommodate a plurality of substrates W. The outer tank 110b is provided on an outer side surface of an upper opening of the inner tank 110a. The upper edge of the outer tub 110b is higher than the upper edge of the inner tub 110a.
The inner tank 110a and the outer tank 110b each hold phosphoric acid solution. A plurality of substrates W are put into the inner groove 110a. Specifically, the plurality of substrates W held in the substrate holding portion 130 are put into the inner groove 110a. The substrates W are immersed in the phosphoric acid solution in the inner tank 110a by being put into the inner tank 110a.
The first storage tank 110 is connected to a circulation pipe 116. The circulation pipe 116 circulates the phosphoric acid solution in the first storage tank 110 so as to flow out of the first storage tank 110 and return the phosphoric acid solution to the first storage tank 110. The circulation pipe 116 connects the outer tank 110b and the lower portion of the inner tank 110a.
The circulation pipe 116 is provided with a pump 116a. The pump 116a delivers phosphoric acid to the first holding tank 110. The circulation pipe 116 circulates the phosphoric acid solution in the first storage tank 110. When the phosphoric acid liquid in the first storage tank 110 is circulated through the circulation pipe 116, impurities in the phosphoric acid liquid can be removed. Alternatively, when the phosphoric acid solution in the first storage tank 110 is circulated through the circulation pipe 116, the phosphoric acid solution may be heated to a predetermined temperature.
The circulation pipe 116 is connected to a circulation liquid supply pipe 116 t. The circulation pipe 116 redirects the phosphoric acid solution flowing out of the first storage tank 110 to the first storage tank 110. Specifically, the upstream end of the circulation pipe 116 is located in the outer tank 110b, and the downstream end of the circulation pipe 116 is located in the inner tank 110a. The downstream end of the circulation pipe 116 is connected to a circulation liquid supply pipe 116t located in the inner tank 110a.
The circulating liquid supply pipe 116t is disposed in the inner tank 110a. Here, the circulating liquid supply pipe 116t is disposed at the bottom of the inner tank 110a of the first storage tank 110. The circulating liquid supply pipe 116t supplies the circulating phosphoric acid liquid to the inner tank 110a. Therefore, when the substrate W is immersed in the phosphoric acid solution in the inner tank 110a, the phosphoric acid solution is supplied from the circulating solution supply pipe 116t, whereby an upward flow can be formed in the inner tank 110a.
The liquid drain portion 118 is connected to the first storage tank 110. The phosphoric acid solution in the first storage tank 110 can be discharged from the liquid discharge portion 118. Further, the liquid discharge portion 118 discharges the phosphoric acid liquid stored in the first storage tank 110, and the phosphoric acid supply portion 112 and the diluent supply portion 114 supply phosphoric acid and diluent to the first storage tank 110, whereby the phosphoric acid liquid stored in the first storage tank 110 can be replaced with a new phosphoric acid liquid.
The drain portion 118 includes a drain pipe 118a and a valve 118b. The phosphoric acid solution in the inner tank 110a is discharged through the discharge pipe 118a and the valve 118b.
A drain pipe 118a is connected to the bottom wall of the inner tank 110a. The drain pipe 118a is provided with a valve 118b. The valve 118b is opened and closed by the control device 180. By opening the valve 118b, the phosphoric acid solution stored in the inner tank 110a is discharged to the outside through the drain pipe 118a. The discharged phosphoric acid liquid is sent to a liquid discharge treatment device (not shown) for treatment. The rinse liquid in the second storage tank 120 can be discharged, preferably in the same manner as in the first storage tank 110.
The rinse liquid supply unit 122 includes a pipe 122a, a valve 122b, and a rinse liquid supply pipe 122t. The rinse liquid is discharged from the rinse liquid supply pipe 122t to the second storage tank 120. One end of the pipe 122a is connected to a rinse liquid supply source. The pipe 122a is provided with a valve 122b. The rinse liquid supply pipe 122t is disposed at the other end of the pipe 122 a. The supply of the rinse liquid to the second storage tank 120 can be controlled by the valve 122b. When the valve 122b is opened under the control of the control device 180, the rinse liquid passing through the piping 122a is supplied from the rinse liquid supply pipe 122t to the second storage tank 120.
The rinse liquid supply pipe 122t is disposed in the second storage tank 120. The rinse liquid supply pipe 122t is disposed at the bottom of the second storage tank 120. Therefore, when the substrate W is immersed in the rinse solution in the second storage tank 120, the rinse solution is supplied from the rinse solution supply pipe 122t, whereby an upward flow can be formed in the second storage tank 120.
In the substrate processing apparatus 100, the phosphoric acid treatment is preferably performed by immersing the substrate W in heated phosphoric acid. This makes it possible to complete the phosphoric acid treatment in a short time. The rinse process is preferably performed by immersing the substrate W in a heated rinse solution. This makes it possible to prevent the phosphoric acid-treated substrate W from being damaged by temperature changes and to perform the rinsing process in a short time.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 9. Fig. 9 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 9 has the same configuration as that described above with reference to fig. 8, except that the high-temperature phosphoric acid processing and the rinse processing can be performed on the substrate W, and the transfer of the rinse liquid can be switched according to the temperature of the rinse liquid, and redundant description is omitted.
As shown in fig. 9, the phosphoric acid solution in the first storage tank 110 can be heated. Here, the substrate processing apparatus 100 further includes a filter 116b, a heater 116c, a regulating valve 116d, and a valve 116e. The circulation pipe 116 includes a filter 116b, a heater 116c, a regulating valve 116d, a valve 116e, and a circulation liquid supply pipe 116t in addition to the pump 116 a. The pump 116a, the filter 116b, the heater 116c, the regulator valve 116d, and the valve 116e are arranged in this order from the upstream side to the downstream side of the circulation pipe 116.
The circulation pipe 116 redirects the phosphoric acid solution flowing out of the first storage tank 110 to the first storage tank 110. Specifically, the upstream end of the circulation pipe 116 is located in the outer tank 110b, and the downstream end of the circulation pipe 116 is located in the inner tank 110a. The downstream end of the circulation pipe 116 is connected to a circulation liquid supply pipe 116t located in the inner tank 110a.
The pump 116a feeds phosphoric acid liquid from the circulation pipe 116 to the circulation liquid supply pipe 116 t. The filter 116b filters the phosphoric acid solution flowing through the circulation pipe 116. The filter 116b filters and removes foreign substances such as particles in the phosphoric acid solution flowing through the circulation pipe 116.
The heater 116c heats the phosphoric acid liquid flowing through the circulation pipe 116. The temperature of the phosphoric acid solution is regulated by a heater 116 c. The heater 116c heats the phosphoric acid liquid flowing through the circulation pipe 116 to adjust the temperature to the treatment temperature. The treatment temperature is, for example, about 160 ℃ to 200 ℃. The heater 116c may heat the phosphoric acid solution and determine the temperature of the phosphoric acid solution. In this case, the heater 116c has a heating portion and a temperature measuring portion.
The adjustment valve 116d adjusts the opening of the circulation pipe 116 to adjust the flow rate of the phosphoric acid liquid supplied to the circulation liquid supply pipe 116 t. The regulating valve 116d regulates the flow of phosphoric acid solution. The regulator valve 116d includes a valve body (not shown) having a valve seat provided therein, a valve body for opening and closing the valve seat, and an actuator (not shown) for moving the valve body between an open position and a closed position. The other regulating valves are also the same. The valve 116e opens and closes the circulation pipe 116. The regulator valve 116d may be omitted. In this case, the flow rate of the phosphoric acid liquid supplied to the circulation liquid supply pipe 116t is adjusted by controlling the pump 116 a.
The circulating liquid supply pipe 116t is disposed in the inner tank 110a. Here, the circulating liquid supply pipe 116t is disposed at the bottom of the inner tank 110a of the first storage tank 110. The circulating liquid supply pipe 116t is disposed in the inner tank 110a. The circulating liquid supply pipe 116t supplies the circulating phosphoric acid liquid to the inner tank 110a.
In fig. 9, only one regulator valve 116d and one valve 116e are shown in order to avoid excessive complexity of the drawing, but at least one of the regulator valves 116d and 116e may be provided in plurality.
In fig. 9, the second storage tank 120 is capable of storing the heated rinse liquid. The rinse liquid supply unit 122 includes a first rinse liquid supply unit 122p and a second rinse liquid supply unit 122q. The first rinse liquid supply unit 122p supplies the heated rinse liquid to the second storage tank 120. For example, the first rinse liquid supply unit 122p supplies rinse liquid heated to 45 ℃ or higher and 70 ℃ or lower to the second storage tank 120. The second rinse liquid supply unit 122q supplies the rinse liquid at normal temperature to the second storage tank 120.
The first rinse liquid supply unit 122p includes a pipe 122a1, a valve 122b1, and a heater 122c. The piping 122a1 is connected to a rinse liquid supply source. The pipe 122a1 is provided with a valve 122b1 and a heater 122c. The supply of the rinse liquid to the second storage tank 120 can be controlled by the valve 122b 1. The temperature of the rinse liquid is regulated by the heater 122c. The heater 122c heats the rinse liquid flowing through the pipe 122a1 to adjust the temperature of the rinse liquid (for example, about 60 to 80 ℃).
The second rinse liquid supply unit 122q includes a pipe 122a2 and a valve 122b2. The rinse liquid is discharged from one end of the pipe 122a2 to the second storage tank 120. The piping 122a2 is connected to a rinse liquid supply source. The pipe 122a2 is provided with a valve 122b2. The supply of the rinse liquid to the second storage tank 120 can be controlled by the valve 122b2.
One end of the pipe 122a is connected to the pipe 122a1 and the pipe 122a 2. The rinse liquid supply pipe 122t is disposed at the other end of the pipe 122 a. The rinse solution is supplied from the rinse solution supply pipe 122t to the second storage tank 120.
For example, the first rinse liquid supply unit 122p may supply the heated rinse liquid to the second storage tank 120 during a period of the rinse liquid transfer unit 140 supplying the rinse liquid to the second storage tank 120 in a specific period of the rinse liquid immersion period. The first rinse liquid supply unit 122p may supply the heated rinse liquid to the second storage tank 120 before the specific period. The first rinse liquid supply unit 122p may supply the heated rinse liquid to the second storage tank 120 during the specific period.
On the other hand, when the rinse solution transfer portion 140 stops the supply of the rinse solution to the second storage tank 120 in a specific period of the rinse solution dipping period to the first storage tank 110, the second rinse solution supply portion 122q may supply the rinse solution to the second storage tank 120. The second rinse liquid supply unit 122q may supply unheated rinse liquid to the second storage tank 120 after a predetermined period.
In fig. 9, the piping 122a1 and the piping 122a2 are connected to the rinse liquid supply pipe 122t via the piping 122a, but the piping 122a1 may be separated from the piping 122a2 and connected to the rinse liquid supply pipe 122 t.
The rinse liquid transfer unit 140 may further include a temperature sensor 149a that can detect the temperature of the rinse liquid. For example, the control unit 182 may determine whether to transfer the rinse solution from the rinse solution receiving unit 146 to the first storage tank 110 based on the detection result of the temperature sensor 149a. Typically, when the temperature of the rinse liquid detected by the temperature sensor 149a is higher than the threshold value, the control unit 182 determines to transfer the rinse liquid from the rinse liquid receiving unit 146 to the first storage tank 110. On the other hand, when the temperature of the rinse liquid detected by the temperature sensor 149a falls below the threshold value, the control unit 182 determines to stop transferring the rinse liquid from the rinse liquid receiving unit 146 to the first storage tank 110.
In the substrate processing apparatus 100 shown in fig. 6, 8, and 9, the rinse solution transfer unit 140 includes the rinse solution receiving unit 146 that receives the rinse solution overflowed from the second storage tank 120, and the rinse solution in the rinse solution receiving unit 146 flows from the rinse solution receiving unit 146 to the first storage tank 110 or the circulation pipe 116, but the present embodiment is not limited thereto. The rinse solution in the rinse solution receiving portion 146 may flow from the rinse solution receiving portion 146 to the first storage tank 110 or the circulation pipe 116 via the tank storing the rinse solution.
In the substrate processing apparatus 100 shown in fig. 6, 8, and 9, the rinse liquid is discarded after the rinse liquid transfer portion 140 stops transferring the rinse liquid to the first storage tank 110, but the present embodiment is not limited thereto. Even after the rinse solution diversion unit 140 stops diverting the rinse solution to the first storage tank 110, the rinse solution diversion unit 140 can use the rinse solution for other purposes.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 10. Fig. 10 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 10 further includes a storage tank 147, and the rinse liquid is reused according to the conductivity of the rinse liquid, and the same description as the configuration described above with reference to fig. 9 is provided, and a redundant description is omitted to avoid redundancy.
As shown in fig. 10, the rinse liquid transfer unit 140 further includes a storage tank 147. The storage tank 147 stores the rinse solution between the rinse solution receiving unit 146 and the circulation pipe 116. A valve 142a is disposed between the storage tank 147 and the rinse liquid receiving unit 146, and a valve 142b is disposed between the storage tank 147 and the circulation pipe 116. The rinse solution in the rinse solution receiving portion 146 is temporarily stored in the storage tank 147, the valve 142a, and the valve 142b until the rinse solution is supplied to the first storage tank 110 via the circulation pipe 116. Therefore, the timing of flowing the rinse liquid to the circulation pipe 116 can be appropriately adjusted.
The piping 141 is provided with a conductivity meter 145. The conductivity of the rinse solution can be measured by the conductivity meter 145. For example, after a predetermined time elapses during the rinse liquid immersion, almost no phosphoric acid liquid component flows out from the substrate W. Therefore, the rinse liquid in the second storage tank 120 is almost free from impurities, and the rinse liquid in the second storage tank 120 can be reused as new rinse liquid. For example, by measuring the conductivity of the rinse solution, it can be determined whether the rinse solution is reused or not.
The rinse liquid transfer unit 140 further includes a pipe 148p and a valve 148q. The piping 148p is connected to the piping 141 and the rinse liquid supply mechanism. The pipe 148p is provided with a valve 148q. When the valve 148q is opened, the rinse liquid passing through the pipe 148p is supplied to the rinse liquid supply mechanism. For example, the rinse solution in the second storage tank 120 can be reused by opening the valve 148q according to the conductivity of the rinse solution.
In the explanation shown in fig. 1 to 10, the flushing process is performed in the second storage tank 120, but the present embodiment is not limited to this. Other treatments than the flushing treatment may be performed in the second holding tank 120.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 11. Fig. 11 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 11 has the same configuration as that described above with reference to fig. 10 except that a processing liquid other than a rinse liquid is supplied to the second storage tank 120, and redundant description is omitted.
As shown in fig. 11, the rinse liquid is supplied to the second storage tank 120, and the first component liquid and the second component liquid are supplied. For example, ammonia is supplied to the second storage tank 120 as the first component liquid and hydrogen peroxide is supplied as the second component liquid.
The substrate processing apparatus 100 further includes a first component liquid supply unit 123 and a second component liquid supply unit 124. The first component liquid supply portion 123 includes a pipe 123a and a valve 123b. One end of the pipe 123a is connected to a first component liquid supply source. The pipe 123a is provided with a valve 123b. The other end of the pipe 123a is connected to the pipe 122 a. The valve 123b can control the supply of the first component liquid to the second storage tank 120 via the pipe 123a and the pipe 122 a. When the valve 123b is opened under the control of the control device 180, the first component liquid passing through the pipe 123a and the pipe 122a is supplied to the second storage tank 120.
The second component liquid supply unit 124 includes a pipe 124a and a valve 124b. One end of the pipe 124a is connected to a second component liquid supply source. The pipe 124a is provided with a valve 124b. The other end of the pipe 124a is connected to the pipe 122 a. The valve 124b can control the supply of the second component liquid to the second storage tank 120 via the piping 124a and the piping 122 a. When the valve 124b is opened under the control of the control device 180, the second component liquid passing through the pipe 124a and the pipe 122a is supplied to the second storage tank 120.
Here, the first component liquid supply unit 123 and the second component liquid supply unit 124 supply the first component liquid and the second component liquid to the second storage tank 120. Thus, the second storage tank 120 not only performs the rinse process on the substrate W, but also performs the chemical solution process on the substrate W.
The circulation pipe 116 is preferably provided with a tank for storing the heated phosphoric acid solution. In addition, the rinse liquid is preferably discharged to the substrate W above the second storage tank 120.
Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 12. Fig. 12 is a schematic view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 of fig. 12 has the same configuration as that described above with reference to fig. 11 except that a temperature adjustment tank for storing the heated phosphoric acid solution is disposed in the circulation pipe 116, and the rinse solution is discharged to the substrate W above the second storage tank 120, and overlapping description is omitted to avoid redundancy.
As shown in fig. 12, the substrate processing apparatus 100 further includes a temperature adjustment tank 116f. The temperature adjustment tank 116f is disposed in the circulation pipe 116. Thereby, the temperature adjustment tank 116f can store the heated phosphoric acid liquid. The storage tank 147 is preferably disposed adjacent to the temperature adjustment tank 116f. For example, the storage tank 147 is preferably disposed within 2m of the temperature adjustment tank 116f. This can maintain the temperature of the rinse solution stored in the storage tank 147 at a high temperature.
Further, the rinse liquid discharge port 122f and the rinse liquid discharge port 122g are preferably disposed above the second storage tank 120. The rinse liquid can be discharged from the rinse liquid discharge ports 122f and 122g to the substrate W before or after the rinse liquid immersed in the second storage tank 120.
Next, a substrate processing method according to the present embodiment will be described with reference to fig. 1 to 14C. Fig. 13A to 14C are schematic views for explaining a substrate processing method according to the present embodiment.
As shown in fig. 13A, the substrate holding portion 130 holds the substrate W above the first storage groove 110. The substrate holding unit 130 may receive the substrate W from another substrate holding mechanism above the first storage tank 110. Alternatively, the substrate holding portion 130 may be moved to above the first storage groove 110 in a state where the substrate W is held.
As shown in fig. 13B, the substrate holding portion 130 impregnates the substrate W with the phosphoric acid solution in the first storage tank 110. The control unit 182 controls the substrate holding unit 130 such that the substrate holding unit 130 lowers the substrate W while holding the substrate W, and impregnates the substrate W into the phosphoric acid solution in the first storage tank 110.
As shown in fig. 13C, the substrate holding portion 130 pulls up the substrate W in the phosphoric acid solution in the first storage tank 110. The control unit 182 controls the substrate holding unit 130 such that the substrate holding unit 130 lifts the substrate W while holding the substrate W, thereby pulling up the substrate W from the phosphoric acid solution in the first storage tank 110.
At this time, the rinse solution in the second storage tank 120 may be discarded.
As shown in fig. 13D, the substrate holding portion 130 holds the substrate W above the second storage groove 120. The substrate holding unit 130 may receive the substrate W from another substrate holding mechanism above the second storage tank 120. Alternatively, the substrate holding portion 130 may be moved to above the second storage groove 120 in a state where the substrate W is held.
At this time, the rinse liquid may be supplied to the second storage tank 120. In this case, the heated rinse liquid is preferably supplied to the second storage tank 120.
As shown in fig. 14A, the substrate holding portion 130 dips the substrate W into the rinse solution in the second storage tank 120. The control unit 182 controls the substrate holding unit 130, and lowers the substrate holding unit 130 while holding the substrate W, thereby immersing the substrate W in the rinse solution in the second storage tank 120.
Here, when the substrate W is immersed in the rinse solution in the second storage tank 120, the rinse solution overflows from the second storage tank 120. When the substrate W is treated with high-temperature phosphoric acid, the temperature of the rinse solution in the second storage tank 120 also increases. The rinse liquid receiving portion 146 receives the rinse liquid overflowed from the second storage tank 120. The rinse solution in the second storage tank 120 is supplied to the first storage tank 110 via the rinse solution receiving unit 146, the storage tank 147, and the circulation pipe 116. The rinse solution in the second storage tank 120 may be temporarily stored in the rinse solution receiving unit 146 and/or the storage tank 147, and may be supplied to the first storage tank 110 at a predetermined timing.
At this time, the rinse liquid may be supplied to the second storage tank 120. In this case, the heated rinse liquid is preferably supplied to the second storage tank 120.
As shown in fig. 14B, the substrate holding portion 130 holds the substrate W immersed in the rinse solution in the second storage tank 120. The control unit 182 controls the substrate holding unit 130 so that the substrate holding unit 130 holds the substrate W immersed in the rinse solution in the second storage tank 120. After a predetermined period of time from immersing the substrate W in the rinse solution in the second storage tank 120, the rinse solution in the rinse solution receiving portion 146 is not supplied to the first storage tank 110. For example, the rinse solution in the rinse solution receiving unit 146 is discarded.
At this time, the rinse liquid may be supplied to the second storage tank 120. In this case, unheated rinse liquid may be supplied to the second holding tank 120.
As shown in fig. 14C, the substrate holding portion 130 is lifted up to pull up the substrate W in the rinse solution in the second storage tank 120. The control unit 182 controls the substrate holding unit 130 so that the substrate holding unit 130 is lifted up while holding the substrate W, and pulls up the substrate W from the rinse solution in the second storage tank 120. At this time, the rinse liquid is discharged from the rinse liquid discharge ports 122f and 122g toward the substrate W.
Thereafter, the rinse liquid is discharged from the second storage tank 120 and another chemical liquid is supplied to the second storage tank 120, and the chemical liquid treatment may be performed separately on the substrate W.
According to the present embodiment, the rinse solution in the second storage tank 120 is stored in the storage tank 147 for a specific period. This makes it possible to efficiently supply the rinse solution having a high phosphoric acid concentration and a high temperature to the first storage tank 110.
Next, a substrate processing system 10 including the substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 15. Fig. 15 is a schematic view of a substrate processing system 10 including a substrate processing apparatus 100 according to the present embodiment. The substrate processing system 10 shown in fig. 15 includes first to third substrate processing apparatuses 100A to 100C.
As shown in fig. 15, the substrate processing system 10 includes an input unit 20, a plurality of storage units 30, a transfer mechanism 40, a delivery unit 50, a buffer unit BU, a first conveyance device CTC, a second conveyance device WTR, a drying processing device 60, a plurality of substrate processing devices 100, and a control device 180.
The plurality of substrate processing apparatuses 100 includes a first substrate processing apparatus 100A, a second substrate processing apparatus 100B, and a third substrate processing apparatus 100C. The drying processing apparatus 60, the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are arranged in a direction. For example, the drying processing apparatus 60, the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are adjacent to the conveyance path of the first conveyance device CTC, and are arranged in the order of the drying processing apparatus 60, the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C from the vicinity of the conveyance path of the first conveyance device CTC.
Here, the first to third substrate processing apparatuses 100A to 100C each include a first storage tank 110 for storing a phosphoric acid solution, a second storage tank 120 for storing a rinse solution at least for a certain period, and a substrate holding section 130. Here, the substrate holding units 130 in the first to third substrate processing apparatuses 100A to 100C may be referred to as substrate holding units 130A to 130C. The substrates W subjected to different treatments may be input to the first to third substrate treatment apparatuses 100A to 100C, respectively.
The substrate W to be processed in the substrate processing apparatus 100 is carried in from the loading section 20. The input unit 20 includes a plurality of mounting tables 22. The substrate W processed by the substrate processing apparatus 100 is carried out from the carrying-out section 50. The delivery unit 50 includes a plurality of mounting tables 52.
The input unit 20 is mounted with a housing unit 30 for housing the substrate W. The housing portion 30 mounted on the input portion 20 houses the substrates W that are not processed by the substrate processing apparatus 100. Here, the two storage portions 30 are placed on the two placement tables 22, respectively.
The plurality of storage units 30 each store a plurality of substrates W. Each substrate W is stored in the storage section 30 in a horizontal posture. The storage unit 30 is, for example, a FOUP (front opening unified pod), front Opening Unified Pod.
The housing section 30 mounted on the feed-out section 50 houses the substrates W processed by the substrate processing apparatus 100. The delivery unit 50 includes a plurality of mounting tables 52. The two storage units 30 are placed on the two placement tables 52, respectively. The delivery unit 50 accommodates the processed substrate W in the accommodation unit 30 and delivers the substrate W together with the accommodation unit 30.
The buffer unit BU is disposed adjacent to the input unit 20 and the delivery unit 50. The buffer unit BU takes in the storage section 30 mounted on the input section 20 together with the substrate W, and mounts the storage section 30 on a rack (not shown). The buffer unit BU receives the processed substrate W, stores the substrate W in the storage unit 30, and mounts the storage unit 30 on a rack. The buffer unit BU is internally provided with a delivery mechanism 40.
The transfer mechanism 40 transfers the storage unit 30 between the input unit 20 and the delivery unit 50 and the rack. The transfer mechanism 40 transfers only the substrate W to and from the first transfer device CTC. That is, the transfer mechanism 40 transfers the substrates W to and from the first transfer device CTC in batches.
After receiving the lot of unprocessed substrates W from the transfer mechanism 40, the first transfer device CTC changes the posture of the substrates W from the horizontal posture to the vertical posture, and transfers the substrates W to the second transfer device WTR. After receiving the processed lot of the plurality of substrates W from the second conveyor WTR, the first conveyor CTC changes the posture of the plurality of substrates W from the vertical posture to the horizontal posture, and transfers the lot of the substrates W to the transfer mechanism 40.
The second conveyor WTR is movable from the third substrate processing apparatus 100C to the second substrate processing apparatus 100B along the longitudinal direction of the substrate processing system 10. The second transfer device WTR is capable of transferring a lot of substrates W into and out of the first substrate processing device 100A, the second substrate processing device 100B, and the third substrate processing device 100C. Specifically, the second conveyance device WTR transfers the substrate W to the substrate holders 130A to 130C of the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C, and the substrate holders 130A to 130C perform phosphoric acid treatment and rinsing treatment on the substrate W, respectively.
In the above description with reference to fig. 1 to 15, the explanation has been made of the case where the rinse liquid in the second storage tank 120 of the substrate processing apparatus 100 is transferred to the first storage tank 110 of the same substrate processing apparatus 100, but the present embodiment is not limited to this. The rinse solution in the second tank 120 may be transferred to the first tank 110 of another substrate processing apparatus 100. The rinse solution in the second storage tank 120 may be transferred to a first storage tank 110 different from the first storage tank 110 in which the substrate W immersed in the rinse solution in the second storage tank 120 is treated.
The embodiments of the present invention are described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various forms within a range not departing from the gist thereof. In addition, various inventions can be formed by appropriately combining a plurality of the constituent elements disclosed in the above embodiments. For example, several constituent elements may be deleted from all the constituent elements shown in the embodiment. In addition, the constituent elements of the different embodiments may be appropriately combined. For ease of understanding, the drawings schematically show the respective components mainly, and there are cases where the thickness, length, number, interval, etc. of the components are different from the actual ones depending on the drawings. The materials, shapes, sizes, and the like of the respective constituent elements shown in the above-described embodiments are merely examples, and are not particularly limited, and various modifications can be made within a range substantially not departing from the effects of the present invention.
Industrial applicability
The present invention is applicable to a substrate processing apparatus and a substrate processing method.

Claims (12)

1. A substrate processing apparatus, wherein,
the device is provided with:
a first storage tank for storing phosphoric acid solution;
a second storage tank for storing a rinse solution;
a substrate holding unit configured to hold a substrate and descend, and to dip the substrate in the rinse liquid in the second storage tank; and
And a rinse liquid transfer unit configured to supply the rinse liquid in the second storage tank, which is a specific period of the rinse liquid immersion period in which the substrate is immersed in the rinse liquid, to the first storage tank, and to stop the supply of the rinse liquid in the second storage tank during a period subsequent to the specific period of the rinse liquid immersion period.
2. The substrate processing apparatus according to claim 1, wherein,
further comprising a circulation pipe for circulating the phosphoric acid solution in the first storage tank so as to flow out from the first storage tank and return to the first storage tank,
the rinse liquid transfer unit supplies the rinse liquid in the second storage tank to the first storage tank via the circulation pipe.
3. The substrate processing apparatus according to claim 2, wherein,
the method further comprises:
a phosphoric acid supply unit configured to supply phosphoric acid to the first storage tank;
a diluent supply unit configured to supply a diluent to the first storage tank; and
and a rinse liquid supply unit configured to supply rinse liquid to the second storage tank.
4. The substrate processing apparatus according to claim 3, wherein,
Further comprising a heater for heating the phosphoric acid solution flowing through the circulation pipe,
the rinse liquid supply unit heats the rinse liquid before the specific period and supplies the rinse liquid to the second storage tank, and supplies the rinse liquid to the second storage tank after the specific period without heating the rinse liquid.
5. The substrate processing apparatus according to claim 4, wherein,
the rinse liquid transfer portion includes a storage tank that stores at least a part of the rinse liquid in the second storage tank for the specific period.
6. The substrate processing apparatus according to claim 5, wherein,
further comprises a temperature control tank disposed in the circulation pipe,
the storage tank is disposed adjacent to the temperature adjustment tank.
7. A substrate processing method, wherein,
comprising:
immersing the substrate in the phosphoric acid solution stored in the first storage tank;
immersing the substrate in the rinse solution stored in the second storage tank;
a transfer step of supplying the rinse solution to the second storage tank in a specific period among rinse solution immersion periods in which the substrate is immersed in the rinse solution;
and a diversion stopping step of stopping supply of the rinse liquid to the first storage tank in a period subsequent to the specific period among the rinse liquid immersion periods.
8. The substrate processing method according to claim 7, wherein,
further comprising a step of circulating the phosphoric acid liquid through a circulation pipe for allowing the phosphoric acid liquid in the first storage tank to flow out from the first storage tank and return to the first storage tank,
the transfer step supplies the rinse liquid in the second storage tank to the first storage tank via the circulation pipe.
9. The substrate processing method according to claim 8, wherein,
further comprising:
a step of supplying phosphoric acid to the first storage tank;
a step of supplying a diluent to the first storage tank;
and a step of supplying a rinse liquid to the second storage tank.
10. The substrate processing method according to claim 9, wherein,
further comprising a step of heating the phosphoric acid liquid flowing through the circulation pipe,
in the step of supplying the rinse liquid, the rinse liquid is heated before the specific period and supplied to the second storage tank, and the rinse liquid is supplied to the second storage tank after the specific period without being heated.
11. The substrate processing method according to claim 10, wherein,
the transferring step includes a step of storing the rinse liquid in the second storage tank for the specific period of time in the storage tank.
12. The substrate processing method according to claim 11, wherein,
further comprising a step of storing the phosphoric acid solution flowing through the circulation pipe in a temperature adjustment tank,
the storage tank is disposed adjacent to the temperature adjustment tank.
CN202310363079.3A 2022-04-04 2023-04-04 Substrate processing apparatus and substrate processing method Pending CN116889994A (en)

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