TW202338968A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TW202338968A
TW202338968A TW112100799A TW112100799A TW202338968A TW 202338968 A TW202338968 A TW 202338968A TW 112100799 A TW112100799 A TW 112100799A TW 112100799 A TW112100799 A TW 112100799A TW 202338968 A TW202338968 A TW 202338968A
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substrate
liquid
processing
treatment
tank
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伊豆田崇
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing method includes: acquiring information on a substrate; selecting either one of liquid change and concentration adjustment; performing, when the liquid change is selected in the selecting, first processing liquid adjustment by which at least a portion of a processing liquid in a processing tank is discharged from the processing tank and sulfuric acid and hydrogen peroxide are supplied to the processing tank if the processing liquid in the processing tank does not satisfy a specific condition; performing, when the concentration adjustment is selected in the selecting, second processing liquid adjustment by which the concentration of the processing liquid in the processing tank is adjusted while the processing liquid in the processing tank is circulated via a pipe connected to the processing tank; and immersing the substrate in the processing liquid in the processing tank while the processing liquid in the processing tank that has been adjusted in the first processing liquid adjustment or the second processing liquid adjustment is circulated via a pipe connected to the processing tank.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明係關於一種基板處理裝置及基板處理方法。The invention relates to a substrate processing device and a substrate processing method.

於被處理基板即例如半導體晶圓(以下,稱為晶圓)之表面,有時會附著半導體裝置之製造步驟中產生之物質。由於該等物質會降低半導體裝置之特性,故為去除該等物質,而使用複數種藥液進行晶圓表面之洗淨。On the surface of the substrate to be processed, for example, a semiconductor wafer (hereinafter referred to as a wafer), substances generated in the manufacturing steps of the semiconductor device may adhere. Since these substances will degrade the characteristics of semiconductor devices, in order to remove these substances, a plurality of chemical liquids are used to clean the wafer surface.

SPM液用於晶圓表面之洗淨。SPM液係硫酸與過氧化氫水之混合液。除剝離殘存於晶圓表面之抗蝕劑、去除將抗蝕劑灰化後之基板之殘渣外,SPM液還作為用以對元件分離後之基板進行氧化處理之藥液使用。SPM液不僅可用於例如一面使保持於旋轉平台上之晶圓旋轉一面對其表面供給藥液之單片式處理裝置,還可用於將複數片晶圓同時浸漬於裝滿藥液之處理槽內並進行洗淨之批量式處理裝置。SPM liquid is used to clean the wafer surface. SPM liquid is a mixture of sulfuric acid and hydrogen peroxide. In addition to stripping off the resist remaining on the wafer surface and removing the residue on the substrate after ashing the resist, the SPM liquid is also used as a chemical liquid for oxidizing the substrate after component separation. SPM liquid can be used not only in a single-wafer processing device that supplies chemical liquid to the surface of a wafer held on a rotating platform while rotating it, but also in a processing tank filled with chemical liquid that simultaneously immerses multiple wafers. It is a batch processing device that also performs cleaning.

於批量式基板處理裝置中使用SPM液處理晶圓之情形時,一般將例如數十片晶圓浸漬於加熱至100℃~130℃之SPM液內,經過特定時間後取出晶圓,之後重複進行浸漬接下來之晶圓之動作,藉此連續處理複數片晶圓。於此種連續處理中,由於處理槽內之SPM液會附著於晶圓表面,其之一部分被帶出至處理槽外而液面高度降低,故要於特定時序對SPM液補充硫酸及過氧化氫水。When using SPM liquid to process wafers in a batch-type substrate processing equipment, usually dozens of wafers are immersed in an SPM liquid heated to 100°C to 130°C. After a specific period of time, the wafers are taken out, and then the process is repeated. The action of dipping the next wafer allows continuous processing of multiple wafers. In this kind of continuous processing, since the SPM liquid in the processing tank will adhere to the wafer surface, part of it is taken out of the processing tank and the liquid level decreases, so the SPM liquid must be supplemented with sulfuric acid and peroxide at specific times. Hydrogen water.

又,已知過氧化氫為相對不穩定之物質。由於過氧化氫會隨著時間經過分解而產生水,故即便例如配合液面高度之降低而進行硫酸及過氧化氫水之補充,SPM液中之硫酸濃度亦會隨時間降低。當硫酸濃度降低時,污染物質之去除能力降低,故產生定期停止使用該處理槽之晶圓之處理,並對處理槽內之SPM液進行全量更換之作業,從而招致處理效率降低及/或藥液消耗量增大、伴隨於此之藥液成本上升。因此,於批量式基板處理裝置中,研討抑制去除污染物質之能力降低(專利文獻1)。In addition, hydrogen peroxide is known to be a relatively unstable substance. Since hydrogen peroxide decomposes over time to produce water, even if sulfuric acid and hydrogen peroxide water are replenished in conjunction with a decrease in liquid level, the sulfuric acid concentration in the SPM liquid will also decrease over time. When the concentration of sulfuric acid decreases, the ability to remove contaminants decreases. Therefore, the processing of wafers using the processing tank is periodically stopped, and the entire SPM liquid in the processing tank is replaced. This results in a reduction in processing efficiency and/or chemicals. The liquid consumption increases, and the cost of the liquid medicine increases accordingly. Therefore, in a batch-type substrate processing apparatus, studies have been conducted on suppressing a decrease in the ability to remove contaminants (Patent Document 1).

於專利文獻1之基板處理裝置中,於循環流路中,於加熱器之下游側補充硫酸。於專利文獻1中,記載為藉由於循環流路中於加熱器之下游側補充硫酸,而抑制認為有助於有效去除污染物質之過氧化氫及卡羅酸被直接加熱而進行分解。 [先前技術文獻] [專利文獻] In the substrate processing apparatus of Patent Document 1, sulfuric acid is replenished on the downstream side of the heater in the circulation flow path. Patent Document 1 describes that by supplementing sulfuric acid on the downstream side of the heater in the circulation flow path, hydrogen peroxide and carboxyl acid, which are considered to contribute to effective removal of pollutants, are suppressed from being directly heated and decomposed. [Prior technical literature] [Patent Document]

[專利文獻1]日本專利2011-114305號公報[Patent Document 1] Japanese Patent Publication No. 2011-114305

[發明所欲解決之問題][Problem to be solved by the invention]

於專利文獻1之基板處理裝置中,不管基板之種類為何,均將處理槽之SPM濃度調整為固定。然而,根據基板之種類,亦有即便不嚴格調整處理槽之SPM濃度亦可適當地處理基板者,於專利文獻1之基板處理裝置中,與處理基板所需之硫酸及過氧化氫水之量相比,有時會無謂地使用硫酸及過氧化氫水。In the substrate processing apparatus of Patent Document 1, the SPM concentration of the processing tank is adjusted to be constant regardless of the type of substrate. However, depending on the type of substrate, there are cases where the substrate can be appropriately processed without strictly adjusting the SPM concentration of the processing tank. In the substrate processing device of Patent Document 1, the amount of sulfuric acid and hydrogen peroxide water required to process the substrate In contrast, sulfuric acid and hydrogen peroxide are sometimes used needlessly.

本發明係鑑於上述問題而完成者,目的在於提供一種可避免硫酸及過氧化氫水之過量使用之基板處理裝置及基板處理方法。 [解決問題之技術手段] The present invention was completed in view of the above problems, and aims to provide a substrate processing apparatus and a substrate processing method that can avoid excessive use of sulfuric acid and hydrogen peroxide water. [Technical means to solve problems]

根據本發明之一態樣,基板處理方法於貯存有包含硫酸及過氧化氫水之處理液之處理槽中,將基板浸漬於上述處理液而處理上述基板。上述基板處理方法包含以下步驟:於將上述基板浸漬於上述處理槽之上述處理液之前,取得顯示上述基板相關之資訊之基板資訊;基於上述基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為調整上述處理液之處理液調整步驟;第1處理液調整步驟,其於上述選擇之步驟中選擇上述液體更換步驟之情形時,於上述處理槽之上述處理液不滿足特定條件時,自上述處理槽排出上述處理槽之上述處理液之至少一部分,對上述處理槽供給硫酸及過氧化氫水而調整上述處理槽之上述處理液;第2處理液調整步驟,其於上述選擇之步驟中選擇上述濃度調整步驟之情形時,一面使上述處理槽之上述處理液經由連接於上述處理槽之配管循環,一面調整上述處理槽之上述處理液之濃度;及一面使於上述第1處理液調整步驟或上述第2處理液調整步驟中調整後之上述處理槽之上述處理液,經由連接於上述處理槽之配管循環,一面將上述基板浸漬於上述處理槽之上述處理液。According to an aspect of the present invention, in a substrate processing method, the substrate is immersed in a processing tank containing a processing liquid containing sulfuric acid and hydrogen peroxide water to process the substrate. The above-mentioned substrate processing method includes the following steps: before immersing the above-mentioned substrate in the above-mentioned treatment liquid in the above-mentioned treatment tank, obtaining substrate information showing information related to the above-mentioned substrate; based on the above-mentioned substrate information, selecting either a liquid replacement step and a concentration adjustment step Or, as the processing liquid adjustment step for adjusting the above-mentioned processing liquid; the first processing liquid adjustment step, when the above-mentioned liquid replacement step is selected among the above-mentioned selection steps, when the above-mentioned processing liquid in the above-mentioned treatment tank does not meet specific conditions, Discharging at least part of the above-mentioned treatment liquid in the above-mentioned treatment tank from the above-mentioned treatment tank, supplying sulfuric acid and hydrogen peroxide water to the above-mentioned treatment tank to adjust the above-mentioned treatment liquid in the above-mentioned treatment tank; the second treatment liquid adjustment step is in the above-mentioned selected step. When the above-mentioned concentration adjustment step is selected, the concentration of the above-mentioned treatment liquid in the above-mentioned treatment tank is adjusted while circulating the above-mentioned treatment liquid in the above-mentioned treatment tank through the piping connected to the above-mentioned treatment tank; In the adjustment step or the second treatment liquid adjustment step, the processing liquid in the processing tank adjusted in the processing tank is circulated through a pipe connected to the processing tank, and the substrate is immersed in the processing liquid in the processing tank.

某實施形態中,於取得上述基板資訊之步驟中,上述基板資訊顯示已對上述基板之抗蝕劑進行灰化處理之情形時,於上述選擇之步驟中選擇上述液體更換步驟;於取得上述基板資訊之步驟中,上述基板資訊顯示已對上述基板之抗蝕劑進行離子注入、及已將上述基板進行元件分離之任一者之情形時,於上述選擇之步驟中選擇上述濃度調整步驟。In a certain embodiment, in the step of obtaining the substrate information, when the substrate information shows that the resist of the substrate has been ashed, the liquid replacement step is selected in the selection step; in the step of obtaining the substrate, In the information step, when the substrate information shows that either the resist of the substrate has been ion implanted or the substrate has been separated from components, the concentration adjustment step is selected in the selection step.

某實施形態中,於上述第1處理液調整步驟中,於上述處理槽之上述處理液滿足特定條件之情形時,不排出上述處理槽之上述處理液。In one embodiment, in the first treatment liquid adjustment step, when the treatment liquid in the treatment tank satisfies a specific condition, the treatment liquid in the treatment tank is not discharged.

某實施形態中,上述第1處理液調整步驟包含以下步驟:於浸漬上述基板之前,基於將基板浸漬於上述處理槽之處理液起之經過之時間,設定自上述處理槽排出之上述處理液之量。In one embodiment, the first processing liquid adjustment step includes the following step: before immersing the substrate, setting the concentration of the processing liquid discharged from the processing tank based on an elapsed time since the substrate was immersed in the processing liquid of the processing tank. quantity.

某實施形態中,上述第2處理液調整步驟包含以下步驟:基於測定上述處理槽之上述處理液之濃度之濃度感測器之測定結果,調整上述處理液之過氧化氫濃度。In one embodiment, the second treatment liquid adjustment step includes the step of adjusting the hydrogen peroxide concentration of the treatment liquid based on the measurement result of a concentration sensor that measures the concentration of the treatment liquid in the treatment tank.

某實施形態中,上述第2處理液調整步驟包含以下步驟:於將上述基板浸漬於上述處理槽之上述處理液之前,以增加上述處理槽之上述處理液之過氧化氫濃度之方式對上述處理槽供給過氧化氫水;及於將上述基板浸漬於上述處理槽之上述處理液之後,降低上述處理槽之上述處理液之過氧化氫濃度。In one embodiment, the second treatment liquid adjustment step includes the following steps: before the substrate is immersed in the treatment liquid in the treatment tank, the treatment is performed by increasing the hydrogen peroxide concentration of the treatment liquid in the treatment tank. The tank supplies hydrogen peroxide water; and after the substrate is immersed in the processing liquid in the processing tank, the concentration of hydrogen peroxide in the processing liquid in the processing tank is reduced.

根據本發明之另一態樣,基板處理裝置具備:處理槽,其貯存包含硫酸及過氧化氫水之處理液;循環部,其具有供上述處理槽之上述處理液循環之配管;排液部,其排出上述處理槽之上述處理液;處理液供給部,其對上述處理槽供給硫酸及過氧化氫水;基板保持部,其保持基板,將上述基板浸漬於上述處理槽之上述處理液;及控制部,其控制上述循環部、上述排液部、上述處理液供給部及上述基板保持部。上述控制部於將上述基板浸漬於上述處理槽之上述處理液之前,基於顯示上述基板相關之資訊之基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為調整上述處理液之處理液調整步驟;於選擇上述液體更換步驟之情形時,上述控制部以進行第1處理液調整步驟之方式,控制上述排液部及上述處理液供給部,且上述第1處理液調整步驟於上述處理槽之上述處理液不滿足特定條件時,自上述處理槽排出上述處理槽之上述處理液之至少一部分,使上述處理液供給部對上述處理槽供給上述硫酸及上述過氧化氫水而調整上述處理槽之上述處理液;於選擇上述濃度調整步驟之情形時,上述控制部以進行第2處理液調整步驟之方式,控制上述循環部及上述處理液供給部,且上述第2處理液調整步驟一面使上述處理槽之上述處理液經由上述循環部之上述配管循環,一面調整上述處理液之濃度;上述控制部以一面使於上述第1處理液調整步驟或上述第2處理液調整步驟中調整後之上述處理槽之上述處理液經由上述循環部之上述配管循環,一面將上述基板浸漬於上述處理槽之上述處理液之方式,控制上述循環部及上述基板保持部。 [發明之效果] According to another aspect of the present invention, a substrate processing apparatus is provided with: a treatment tank that stores a treatment liquid containing sulfuric acid and hydrogen peroxide water; a circulation unit that has a pipe for circulating the treatment liquid in the treatment tank; and a drainage unit. , which discharges the above-mentioned treatment liquid in the above-mentioned treatment tank; a treatment liquid supply part which supplies sulfuric acid and hydrogen peroxide water to the above-mentioned treatment tank; a substrate holding part which holds the substrate and immerses the above-mentioned substrate in the above-mentioned treatment liquid in the above-mentioned treatment tank; and a control unit that controls the circulation unit, the liquid discharge unit, the processing liquid supply unit, and the substrate holding unit. Before immersing the substrate in the treatment liquid in the treatment tank, the control unit selects either a liquid replacement step or a concentration adjustment step as a treatment liquid for adjusting the treatment liquid based on the substrate information that displays information related to the substrate. Adjustment step: When the above-mentioned liquid replacement step is selected, the above-mentioned control unit controls the above-mentioned liquid discharge part and the above-mentioned processing liquid supply part in a manner to perform the first processing liquid adjustment step, and the above-mentioned first processing liquid adjustment step is performed during the above-mentioned processing. When the treatment liquid in the tank does not meet specific conditions, at least a part of the treatment liquid in the treatment tank is discharged from the treatment tank, and the treatment liquid supply part supplies the sulfuric acid and the hydrogen peroxide water to the treatment tank to adjust the treatment. The above-mentioned treatment liquid in the tank; when the above-mentioned concentration adjustment step is selected, the above-mentioned control part controls the above-mentioned circulation part and the above-mentioned treatment liquid supply part in a manner to perform the second treatment liquid adjustment step, and the above-mentioned second treatment liquid adjustment step is carried out simultaneously The concentration of the processing liquid is adjusted while the processing liquid in the processing tank is circulated through the piping of the circulation unit; and the control unit adjusts the concentration of the processing liquid in the first processing liquid adjustment step or the second processing liquid adjustment step. The processing liquid in the processing tank is circulated through the piping of the circulation section, and the circulation section and the substrate holding section are controlled such that the substrate is immersed in the processing liquid in the processing tank. [Effects of the invention]

根據本發明,可避免硫酸及過氧化氫水之過量使用。According to the present invention, excessive use of sulfuric acid and hydrogen peroxide water can be avoided.

以下,參考圖式,說明本發明之基板處理裝置及基板處理方法之實施形態。另,對圖中相同或相當之部分標注相同之參考符號而不重複說明。另,於本案說明書中,為容易理解發明,有時記載互相正交之X軸、Y軸及Z軸。典型而言,X軸及Y軸與水平方向平行,Z軸與鉛直方向平行。Hereinafter, embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described with reference to the drawings. In addition, the same or corresponding parts in the drawings are marked with the same reference symbols and will not be repeatedly explained. In addition, in the specification of this case, in order to make it easier to understand the invention, the X-axis, Y-axis, and Z-axis that are orthogonal to each other may be described. Typically, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

參考圖1,說明本發明之基板處理裝置100之實施形態。圖1(a)及圖1(b)係本實施形態之基板處理裝置100之模式性立體圖。圖1(a)顯示將基板W投入至處理槽110前之基板處理裝置100。圖1(b)顯示將基板W投入至處理槽110後之基板處理裝置100。Referring to FIG. 1 , an embodiment of the substrate processing apparatus 100 of the present invention will be described. 1(a) and 1(b) are schematic perspective views of the substrate processing apparatus 100 of this embodiment. FIG. 1( a ) shows the substrate processing apparatus 100 before the substrate W is put into the processing tank 110 . FIG. 1( b ) shows the substrate processing apparatus 100 after the substrate W is put into the processing tank 110 .

基板處理裝置100處理基板W。基板處理裝置100以對基板W進行蝕刻、表面處理、氧化處理、特性賦予、處理膜形成、去除及洗淨膜之至少一部分中之至少1者之方式,處理基板W。The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, oxidation treatment, characterizing, forming a treatment film, removing, and cleaning at least a part of the film.

基板W係較薄之板狀。典型而言,基板W係較薄之大致圓板狀。基板W例如包含半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(Field Emission Display:FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板及太陽能電池用基板等。The substrate W is in a thin plate shape. Typically, the substrate W is thin and approximately disc-shaped. The substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, and a substrate for a photomask Substrates, ceramic substrates and solar cell substrates, etc.

基板處理裝置100係批量式基板處理裝置。基板處理裝置100一併處理複數塊基板W。典型而言,基板處理裝置100以組單位處理複數塊基板W。例如,1組包含25片基板W。The substrate processing apparatus 100 is a batch type substrate processing apparatus. The substrate processing apparatus 100 processes a plurality of substrates W at a time. Typically, the substrate processing apparatus 100 processes a plurality of substrates W in groups. For example, one group includes 25 substrates W.

如圖1(a)所示,基板處理裝置100具備處理槽110、基板保持部120、及處理液供給部130。處理槽110貯存用以處理基板W之處理液。處理液係包含硫酸及過氧化氫水之混合液。處理液供給部130對處理槽110供給處理液。例如,處理液供給部130對處理槽110分別供給硫酸及過氧化氫水。一例中,硫酸及過氧化氫水於處理槽110中混合而產生處理液。但,自處理液供給部130供給之硫酸及過氧化氫水亦可於到達處理槽110之前混合而產生處理液。As shown in FIG. 1( a ), the substrate processing apparatus 100 includes a processing tank 110 , a substrate holding part 120 , and a processing liquid supply part 130 . The processing tank 110 stores a processing liquid for processing the substrate W. The treatment liquid is a mixture of sulfuric acid and hydrogen peroxide. The processing liquid supply unit 130 supplies the processing liquid to the processing tank 110 . For example, the processing liquid supply unit 130 supplies sulfuric acid and hydrogen peroxide water to the processing tank 110 . In one example, sulfuric acid and hydrogen peroxide water are mixed in the treatment tank 110 to generate a treatment liquid. However, the sulfuric acid and hydrogen peroxide water supplied from the treatment liquid supply part 130 may be mixed before reaching the treatment tank 110 to generate a treatment liquid.

基板保持部120保持基板W。由基板保持部120保持之基板W之主表面之法線方向與Y方向平行。複數塊基板W沿Y方向排列成一行。複數塊基板W與水平方向大致平行排列。又,複數塊基板W各者之法線於Y方向延伸,複數塊基板W各者與X方向及Z方向大致平行地擴展。The substrate holding part 120 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding part 120 is parallel to the Y direction. A plurality of substrates W are arranged in a row along the Y direction. The plurality of substrates W are arranged substantially parallel to the horizontal direction. In addition, the normal line of each of the plurality of substrates W extends in the Y direction, and each of the plurality of substrates W extends substantially parallel to the X direction and the Z direction.

典型而言,基板保持部120集中保持複數塊基板W。此處,基板保持部120保持沿Y方向排列成一行之基板W。基板保持部120於保持有基板W之狀態下使基板W移動。例如,基板保持部120於保持有基板W之狀態下沿鉛直方向朝鉛直上方或鉛直下方移動。Typically, the substrate holding unit 120 collectively holds a plurality of substrates W. Here, the substrate holding part 120 holds the substrates W arranged in a row in the Y direction. The substrate holding part 120 moves the substrate W while holding the substrate W. For example, the substrate holding portion 120 moves vertically upward or vertically downward in the vertical direction while holding the substrate W.

具體而言,基板保持部120包含升降部。基板保持部120於保持有複數塊基板W之狀態下朝鉛直上方或鉛直下方移動。藉由基板保持部120朝鉛直下方移動,將由基板保持部120保持之複數塊基板W浸漬於貯存在處理槽110之處理液L中。Specifically, the substrate holding part 120 includes a lifting part. The substrate holding part 120 moves vertically upward or vertically downward while holding a plurality of substrates W. As the substrate holding portion 120 moves vertically downward, the plurality of substrates W held by the substrate holding portion 120 are immersed in the processing liquid L stored in the processing tank 110 .

於圖1(a)中,基板保持部120位於處理槽110之上方。基板保持部120於保持有複數塊基板W之狀態下朝鉛直下方(Z方向)下降。藉此,將複數塊基板W投入至處理槽110中。In FIG. 1( a ), the substrate holding part 120 is located above the processing tank 110 . The substrate holding part 120 descends vertically downward (Z direction) while holding a plurality of substrates W. Thereby, a plurality of substrates W are put into the processing tank 110 .

如圖1(b)所示,當基板保持部120下降至處理槽110時,複數塊基板W浸漬於處理槽110內之處理液中。基板保持部120將空開特定間隔而整齊排列之複數塊基板W浸漬於貯存在處理槽110之處理液中。As shown in FIG. 1( b ), when the substrate holding part 120 descends to the processing tank 110 , a plurality of substrates W are immersed in the processing liquid in the processing tank 110 . The substrate holding part 120 immerses a plurality of substrates W neatly arranged at specific intervals into the processing liquid stored in the processing tank 110 .

處理槽110具有雙重槽構造。處理槽110具有內槽112及外槽114。外槽114包圍內槽112。內槽112及外槽114皆具有向上打開之上部開口。The processing tank 110 has a dual tank structure. The processing tank 110 has an inner tank 112 and an outer tank 114. The outer groove 114 surrounds the inner groove 112 . Both the inner groove 112 and the outer groove 114 have upper openings that open upward.

內槽112及外槽114各者貯存處理液。對內槽112投入複數塊基板W。詳細而言,將保持於基板保持部120之複數塊基板W投入至內槽112。藉由將複數塊基板W投入至內槽112,而將之浸漬於內槽112之處理液中。Each of the inner tank 112 and the outer tank 114 stores a treatment liquid. A plurality of substrates W are put into the inner tank 112 . Specifically, the plurality of substrates W held by the substrate holding part 120 are put into the inner tank 112 . By putting a plurality of substrates W into the inner tank 112, they are immersed in the processing liquid of the inner tank 112.

基板保持部120包含本體板122及保持桿124。本體板122係於鉛直方向(Z方向)延伸之板。保持桿124自本體板122之一主表面朝水平方向(X方向)延伸。圖1(a)及圖1(b)中,3根保持桿124自本體板122之一主表面朝水平方向延伸。複數塊基板W於空開特定間隔整齊排列之狀態下,由複數根保持桿124抵接各基板W之下緣,而以立起姿勢(鉛直姿勢)受保持。The substrate holding part 120 includes a body plate 122 and a holding rod 124 . The body plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends in the horizontal direction (X direction) from one main surface of the body plate 122 . In FIG. 1(a) and FIG. 1(b) , three holding rods 124 extend in the horizontal direction from one main surface of the body plate 122 . A plurality of substrates W are arranged neatly at specific intervals, and are held in an upright posture (vertical posture) by a plurality of holding rods 124 contacting the lower edge of each substrate W.

基板保持部120可進而包含升降單元126。升降單元126使本體板122於保持於保持桿124之複數塊基板W位於處理槽110內之下方位置(圖1(b)所示之位置)、與保持於保持桿124之複數塊基板W位於處理槽110之上方之上方位置(圖1(a)所示之位置)之間升降。因此,藉由利用升降單元126將本體板122移動至下方位置,而將保持於保持桿124之複數塊基板W浸漬於處理液中。The substrate holding part 120 may further include a lifting unit 126 . The lifting unit 126 positions the main plate 122 at a position below the plurality of substrates W held on the holding rod 124 in the processing tank 110 (the position shown in FIG. 1(b) ), and at a position where the plurality of substrates W held on the holding rod 124 are positioned The upper part of the processing tank 110 rises and lowers between the upper position (the position shown in FIG. 1(a) ). Therefore, by using the lifting unit 126 to move the main plate 122 to the lower position, the plurality of substrates W held on the holding rod 124 are immersed in the processing liquid.

複數塊基板W由複數根保持桿124保持。詳細而言,藉由各基板W之下緣抵接複數根保持桿124,而由複數根保持桿124將複數塊基板W以立起姿勢(鉛直姿勢)保持。更具體而言,由基板保持部120保持之複數塊基板W沿Y方向空開間隔整齊排列。因此,複數塊基板W沿Y方向排列成一行。又,複數塊基板W各者以與XZ平面大致平行之姿勢保持於基板保持部120。The plurality of substrates W are held by a plurality of holding rods 124 . Specifically, the plurality of holding rods 124 hold the plurality of substrates W in an upright posture (vertical posture) because the lower edge of each substrate W is in contact with the plurality of holding rods 124 . More specifically, the plurality of substrates W held by the substrate holding part 120 are neatly arranged at intervals along the Y direction. Therefore, a plurality of substrates W are arranged in a line along the Y direction. In addition, each of the plurality of substrates W is held by the substrate holding portion 120 in an attitude substantially parallel to the XZ plane.

升降單元126使本體板122及保持桿124升降。藉由升降單元126使本體板122及保持桿124升降,本體板122及保持桿124於保持有複數塊基板W之狀態下朝鉛直上方或鉛直下方移動。升降單元126具有驅動源及升降機構,藉由驅動源驅動升降機構,使本體板122及保持桿124上升及下降。驅動源例如包含馬達。升降機構例如包含齒條/小齒輪機構或滾珠螺桿。The lifting unit 126 raises and lowers the body plate 122 and the holding rod 124 . The body plate 122 and the holding rod 124 are raised and lowered by the lifting unit 126, and the body plate 122 and the holding rod 124 move vertically upward or vertically downward while holding a plurality of substrates W. The lifting unit 126 has a driving source and a lifting mechanism. The driving source drives the lifting mechanism to raise and lower the body plate 122 and the holding rod 124 . The drive source includes a motor, for example. The lifting mechanism includes, for example, a rack/pinion mechanism or a ball screw.

更具體而言,升降單元126使基板保持部120於處理位置(圖1(b)所示之位置)與退避位置(圖1(a)所示之位置)之間升降。如圖1(b)所示,當基板保持部120於保持有複數塊基板W之狀態下朝鉛直下方(Z方向)下降而移動至處理位置時,複數塊基板W被投入至內槽112。詳細而言,保持於基板保持部120之複數塊基板W移動至內槽112內。其結果,將複數塊基板W浸漬於內槽112內之處理液中,由處理液進行處理。另一方面,如圖1(a)所示,當基板保持部120移動至退避位置時,保持於基板保持部120之複數塊基板W移動至內槽112之上方,自處理液提起。More specifically, the lifting unit 126 raises and lowers the substrate holding part 120 between the processing position (the position shown in FIG. 1(b) ) and the retreat position (the position shown in FIG. 1(a) ). As shown in FIG. 1( b ), when the substrate holding part 120 moves down vertically downward (Z direction) while holding the plurality of substrates W and moves to the processing position, the plurality of substrates W are put into the inner tank 112 . Specifically, the plurality of substrates W held in the substrate holding part 120 move into the inner groove 112 . As a result, the plurality of substrates W are immersed in the processing liquid in the inner tank 112 and processed by the processing liquid. On the other hand, as shown in FIG. 1(a) , when the substrate holding part 120 moves to the retracted position, the plurality of substrates W held in the substrate holding part 120 move above the inner tank 112 and are lifted up from the processing liquid.

接著,參考圖1及圖2,說明本實施形態之基板處理裝置100。圖2係本實施形態之基板處理裝置100之模式圖。Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 and 2 . FIG. 2 is a schematic diagram of the substrate processing apparatus 100 of this embodiment.

如圖2所示,基板處理裝置100具備處理槽110、基板保持部120、處理液供給部130、循環部140、排液部150、及控制裝置180。控制裝置180控制基板保持部120、處理液供給部130、循環部140及排液部150。As shown in FIG. 2 , the substrate processing apparatus 100 includes a processing tank 110 , a substrate holding unit 120 , a processing liquid supply unit 130 , a circulation unit 140 , a liquid drain unit 150 , and a control device 180 . The control device 180 controls the substrate holding part 120, the processing liquid supply part 130, the circulation part 140, and the liquid discharge part 150.

處理槽110貯存處理液L。基板保持部120保持基板W。基板保持部120包含升降部。可藉由基板保持部120將複數塊基板W一併浸漬於貯存在處理槽110之處理液L中。The treatment tank 110 stores the treatment liquid L. The substrate holding part 120 holds the substrate W. The substrate holding part 120 includes a lifting part. The plurality of substrates W can be immersed in the processing liquid L stored in the processing tank 110 through the substrate holding part 120 .

處理液供給部130對處理槽110供給處理液。處理液供給部130具有硫酸供給部132、及過氧化氫供給部134。硫酸供給部132對處理槽110供給硫酸。過氧化氫供給部134對處理槽110供給過氧化氫水。The processing liquid supply unit 130 supplies the processing liquid to the processing tank 110 . The processing liquid supply part 130 has a sulfuric acid supply part 132 and a hydrogen peroxide supply part 134. The sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110 . The hydrogen peroxide supply unit 134 supplies hydrogen peroxide water to the treatment tank 110 .

如上所述,過氧化氫隨著時間經過分解而產生水。因此,為將處理槽110之處理液之濃度維持固定,硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水。典型而言,自硫酸供給部132供給之每單位時間之硫酸之量較自過氧化氫供給部134供給之每單位時間之過氧化氫水之量多。例如,硫酸之供給量(體積)與過氧化氫水之供給量(體積)之比率為5:1~10:1。As mentioned above, hydrogen peroxide decomposes over time to produce water. Therefore, in order to maintain the concentration of the treatment liquid in the treatment tank 110 constant, the sulfuric acid supply part 132 and the hydrogen peroxide supply part 134 supply sulfuric acid and hydrogen peroxide water to the treatment tank 110 . Typically, the amount of sulfuric acid per unit time supplied from the sulfuric acid supply part 132 is greater than the amount of hydrogen peroxide water per unit time supplied from the hydrogen peroxide supply part 134 . For example, the ratio of the supply amount (volume) of sulfuric acid to the supply amount (volume) of hydrogen peroxide water is 5:1 to 10:1.

循環部140使貯存於處理槽110之處理液L循環。於循環部140使處理槽110之處理液L循環時,將處理液加熱至特定溫度。又,可於循環部140使處理槽110之處理液L循環時,對處理液進行過濾而自處理液去除雜質。The circulation unit 140 circulates the treatment liquid L stored in the treatment tank 110 . When the circulation unit 140 circulates the treatment liquid L in the treatment tank 110, the treatment liquid is heated to a specific temperature. In addition, when the circulation unit 140 circulates the treatment liquid L in the treatment tank 110, the treatment liquid may be filtered to remove impurities from the treatment liquid.

排液部150將貯存於處理槽110之處理液L排出。可藉由排液部150,排出處理槽110之處理液。又,排液部150將貯存於處理槽110之處理液L排出,且硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水,藉此,可將貯存於處理槽110之處理液L更換為新的處理液。The liquid discharge part 150 discharges the processing liquid L stored in the processing tank 110 . The processing liquid in the processing tank 110 can be discharged through the liquid drainage part 150 . In addition, the liquid discharge part 150 discharges the treatment liquid L stored in the treatment tank 110, and the sulfuric acid supply part 132 and the hydrogen peroxide supply part 134 supply sulfuric acid and hydrogen peroxide water to the treatment tank 110, whereby the treatment liquid L stored in the treatment tank 110 can be discharged. The treatment liquid L in the tank 110 is replaced with a new treatment liquid.

如上所述,處理槽110貯存處理液L。處理液L係硫酸及過氧化氫水之混合液。處理液L中,硫酸之濃度(質量濃度)為80%以上且90%以下,過氧化氫濃度(質量濃度)為0.8%以上且2.0%以下。As described above, the treatment tank 110 stores the treatment liquid L. The treatment liquid L is a mixed liquid of sulfuric acid and hydrogen peroxide water. In the treatment liquid L, the sulfuric acid concentration (mass concentration) is 80% or more and 90% or less, and the hydrogen peroxide concentration (mass concentration) is 0.8% or more and 2.0% or less.

此處,處理槽110為雙重槽構造。處理槽110具有內槽112及外槽114。內槽112及外槽114各自具有向上打開之上部開口。內槽112構成為可貯存處理液L,且收納複數塊基板W。外槽114設置於內槽112之上部開口之外側面。外槽114之上緣之高度較內槽112之上緣之高度高。Here, the processing tank 110 has a double tank structure. The processing tank 110 has an inner tank 112 and an outer tank 114. The inner groove 112 and the outer groove 114 each have an upper opening that opens upward. The inner tank 112 is configured to store the processing liquid L and accommodate a plurality of substrates W. The outer groove 114 is disposed on the outer side of the upper opening of the inner groove 112 . The height of the upper edge of the outer groove 114 is higher than the height of the upper edge of the inner groove 112 .

處理槽110進而具有蓋116。蓋116可相對於內槽112之上部開口開閉。藉由將蓋116關閉,蓋116可將內槽112之上部開口封閉。The processing tank 110 further has a cover 116 . The cover 116 can be opened and closed relative to the upper opening of the inner groove 112 . By closing the cover 116, the cover 116 can seal the upper opening of the inner groove 112.

蓋116具有開門部116a、及開門部116b。開門部116a位於內槽112之上部開口中之X方向之一側。開門部116a配置於內槽112之上緣附近,且可相對於內槽112之上部開口開閉。開門部116b位於內槽112之上部開口中之X方向之另一側。開門部116b配置於內槽112之上緣附近,可相對於內槽112之上部開口開閉。藉由將開門部116a及開門部116b關閉而覆蓋內槽112之上部開口,可將處理槽110之內槽112封閉。The cover 116 has a door opening 116a and a door opening 116b. The door opening 116a is located on one side of the upper opening of the inner groove 112 in the X direction. The door opening 116a is disposed near the upper edge of the inner groove 112, and can be opened and closed relative to the upper opening of the inner groove 112. The door opening 116b is located on the other side of the upper opening of the inner groove 112 in the X direction. The door opening 116b is disposed near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112 . By closing the door portion 116a and the door portion 116b to cover the upper opening of the inner tank 112, the inner tank 112 of the treatment tank 110 can be closed.

基板保持部120保持基板W。基板保持部120於保持有基板W之狀態下朝鉛直上方或鉛直下方移動。藉由基板保持部120朝鉛直下方移動,由基板保持部120保持之基板W被浸漬於貯存於內槽112之處理液L中。The substrate holding part 120 holds the substrate W. The substrate holding part 120 moves vertically upward or vertically downward while holding the substrate W. As the substrate holding portion 120 moves vertically downward, the substrate W held by the substrate holding portion 120 is immersed in the processing liquid L stored in the inner tank 112 .

基板保持部120包含本體板122、及保持桿124。本體板122係於鉛直方向(Z方向)延伸之板。保持桿124自本體板122之一主表面朝水平方向(X方向)延伸。此處,3根保持桿124自本體板122之一主表面朝Y方向延伸。於沿著紙面之近前方向排列有複數塊基板W之狀態下,由複數根保持桿124抵接各基板W之下緣,而將複數塊基板W以立起姿勢(鉛直姿勢)保持。The substrate holding part 120 includes a body plate 122 and a holding rod 124 . The body plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends in the horizontal direction (X direction) from one main surface of the body plate 122 . Here, three holding rods 124 extend in the Y direction from one main surface of the body plate 122 . In a state where a plurality of substrates W are arranged along the front direction of the paper, a plurality of holding rods 124 are in contact with the lower edge of each substrate W to hold the plurality of substrates W in an upright posture (vertical posture).

基板保持部120可進而包含升降單元126。升降單元126使本體板122於保持於基板保持部120之基板W位於內槽112內之處理位置(圖2所示之位置)、與保持於基板保持部120之基板W位於內槽112之上方之退避位置(未圖示)之間升降。因此,藉由利用升降單元126使本體板122移動至處理位置,而將保持於保持桿124之複數塊基板W浸漬於處理液中。藉此,對基板W實施處理。The substrate holding part 120 may further include a lifting unit 126 . The lifting unit 126 positions the main plate 122 at a processing position (the position shown in FIG. 2 ) where the substrate W held by the substrate holding part 120 is located in the inner tank 112 , and the substrate W held by the substrate holding part 120 is positioned above the inner tank 112 between the retreat position (not shown). Therefore, by moving the body plate 122 to the processing position using the lifting unit 126, the plurality of substrates W held on the holding rod 124 are immersed in the processing liquid. Thereby, the substrate W is processed.

硫酸供給部132包含配管132a、及閥132b。自配管132a之一端向處理槽110噴出硫酸。配管132a連接於硫酸供給源。配管132a中配置閥132b。藉由閥132b,可控制對處理槽110供給硫酸。藉由控制裝置180之控制而打開閥132b時,通過配管132a之硫酸供給至處理槽110。處理槽110中,硫酸與處理槽110之處理液混合。The sulfuric acid supply part 132 includes a pipe 132a and a valve 132b. Sulfuric acid is sprayed toward the treatment tank 110 from one end of the pipe 132a. The pipe 132a is connected to a sulfuric acid supply source. The valve 132b is arranged in the pipe 132a. The supply of sulfuric acid to the treatment tank 110 can be controlled by the valve 132b. When the valve 132b is opened under the control of the control device 180, sulfuric acid is supplied to the treatment tank 110 through the pipe 132a. In the treatment tank 110, sulfuric acid is mixed with the treatment liquid in the treatment tank 110.

例如,將自配管132a噴出之硫酸供給至內槽112。當處理液自內槽112之上緣溢出時,溢出之處理液由外槽114接住並回收。此處,硫酸噴出至內槽112。可於內槽112,配置將硫酸自硫酸供給部132供給至內槽112之配管132a之一端。For example, sulfuric acid sprayed from the pipe 132a is supplied to the inner tank 112. When the treatment liquid overflows from the upper edge of the inner tank 112, the overflowing treatment liquid is caught and recovered by the outer tank 114. Here, sulfuric acid is ejected into the inner tank 112 . One end of the pipe 132 a for supplying sulfuric acid from the sulfuric acid supply part 132 to the inner tank 112 may be disposed in the inner tank 112 .

過氧化氫供給部134包含配管134a、及閥134b。自配管134a之一端,向處理槽110噴出過氧化氫水。配管134a連接於過氧化氫水供給源。配管134a中配置閥134b。藉由閥134b,可控制對處理槽110供給過氧化氫水。藉由控制裝置180之控制打開閥134b時,將通過配管134a之過氧化氫水供給至處理槽110。處理槽110中,過氧化氫水與處理槽110之處理液混合。The hydrogen peroxide supply unit 134 includes a pipe 134a and a valve 134b. Hydrogen peroxide water is sprayed toward the treatment tank 110 from one end of the pipe 134a. The pipe 134a is connected to the hydrogen peroxide water supply source. The valve 134b is arranged in the pipe 134a. The supply of hydrogen peroxide water to the treatment tank 110 can be controlled by the valve 134b. When the valve 134b is opened under the control of the control device 180, the hydrogen peroxide water passing through the pipe 134a is supplied to the treatment tank 110. In the treatment tank 110, the hydrogen peroxide water is mixed with the treatment liquid in the treatment tank 110.

例如,自配管134a噴出之過氧化氫水供給至內槽112。當處理液自內槽112之上緣溢出時,溢出之處理液由外槽114接住並回收。此處,過氧化氫水噴出至內槽112。可於內槽112,配置將過氧化氫水自過氧化氫供給部134供給至內槽112之配管134a之一端。For example, the hydrogen peroxide water sprayed from the pipe 134a is supplied to the inner tank 112. When the treatment liquid overflows from the upper edge of the inner tank 112, the overflowing treatment liquid is caught and recovered by the outer tank 114. Here, the hydrogen peroxide water is sprayed into the inner tank 112 . One end of the pipe 134a for supplying hydrogen peroxide water from the hydrogen peroxide supply part 134 to the inner tank 112 may be disposed in the inner tank 112.

循環部140包含配管141、泵142、過濾器143、加熱器144、調整閥145、閥146及循環液供給管148。泵142、過濾器143、加熱器144、調整閥145及閥146依序自配管141之上游朝向下游配置。The circulation unit 140 includes a pipe 141, a pump 142, a filter 143, a heater 144, a regulating valve 145, a valve 146, and a circulating liquid supply pipe 148. The pump 142, the filter 143, the heater 144, the regulating valve 145, and the valve 146 are arranged in order from the upstream to the downstream of the pipe 141.

配管141將自處理槽110排出之處理液再次引導至處理槽110。詳細而言,配管141之上游端位於外槽114,配管141之下游端位於內槽112。配管141之下游端與位於內槽112之循環液供給管148連接。The pipe 141 guides the processing liquid discharged from the processing tank 110 to the processing tank 110 again. Specifically, the upstream end of the pipe 141 is located in the outer tank 114 , and the downstream end of the pipe 141 is located in the inner tank 112 . The downstream end of the pipe 141 is connected to the circulating liquid supply pipe 148 located in the inner tank 112 .

泵142將處理液自配管141輸送至循環液供給管148。過濾器143過濾流過配管141之處理液。過濾器143過濾並去除流過配管141之處理液中之微粒等異物。The pump 142 delivers the processing liquid from the pipe 141 to the circulating liquid supply pipe 148 . The filter 143 filters the treatment liquid flowing through the pipe 141 . The filter 143 filters and removes foreign matter such as particles in the treatment liquid flowing through the pipe 141 .

加熱器144將流過配管141之處理液加熱。藉由加熱器144調整處理液之溫度。加熱器144將流過配管141之處理液加熱,而調整為處理溫度(例如,約100℃~120℃)。加熱器144亦可將處理液加熱且測定處理液之溫度。該情形時,加熱器144具有加熱部且具有溫度測定部。The heater 144 heats the processing liquid flowing through the pipe 141 . The temperature of the treatment liquid is adjusted by the heater 144. The heater 144 heats the processing liquid flowing through the pipe 141 and adjusts it to a processing temperature (for example, about 100°C to 120°C). The heater 144 can also heat the processing liquid and measure the temperature of the processing liquid. In this case, the heater 144 has a heating part and a temperature measurement part.

調整閥145調節配管141之開度,而調整供給至循環液供給管148之處理液之流量。調整閥145調整處理液之流量。調整閥145包含於內部設置有閥座之閥主體(未圖示)、將閥座開閉之閥體、及使閥體於開位置與閉位置之間移動之致動器(未圖示)。關於其他調整閥亦同樣。閥146將配管141開閉。另,亦可省略調整閥145。該情形時,藉由控制泵142之控制調整供給至循環液供給管148之處理液之流量。The adjustment valve 145 adjusts the opening of the pipe 141 to adjust the flow rate of the processing liquid supplied to the circulating liquid supply pipe 148 . The regulating valve 145 regulates the flow rate of the treatment liquid. The adjustment valve 145 includes a valve body (not shown) with a valve seat inside, a valve body that opens and closes the valve seat, and an actuator (not shown) that moves the valve body between an open position and a closed position. The same applies to other regulating valves. The valve 146 opens and closes the pipe 141. In addition, the adjustment valve 145 may be omitted. In this case, the flow rate of the processing liquid supplied to the circulating liquid supply pipe 148 is adjusted by controlling the control pump 142 .

循環液供給管148配置於內槽112。此處,循環液供給管148配置於處理槽110之內槽112之底部。循環液供給管148配置於貯存於內槽112之處理液L內。循環液供給管148對內槽112供給循環後之處理液。The circulating fluid supply pipe 148 is arranged in the inner tank 112 . Here, the circulating liquid supply pipe 148 is arranged at the bottom of the inner tank 112 of the treatment tank 110 . The circulating liquid supply pipe 148 is arranged in the treatment liquid L stored in the inner tank 112 . The circulating liquid supply pipe 148 supplies the circulated treatment liquid to the inner tank 112 .

排液部150具有排液配管151、閥152、排液配管153、閥154、及閥155。藉由排液配管151及閥152,排出內槽112之處理液。藉由排液配管153、閥154及閥155,排出外槽114之處理液。The drain part 150 has a drain pipe 151, a valve 152, a drain pipe 153, a valve 154, and a valve 155. The treatment liquid in the inner tank 112 is discharged through the drain pipe 151 and the valve 152. The treatment liquid in the outer tank 114 is discharged through the drain pipe 153, the valve 154 and the valve 155.

於內槽112之底壁,連接排液配管151。排液配管151中配置閥152。閥152藉由控制裝置180進行開閉。將閥152打開,藉此,貯存於內槽112內之處理液通過排液配管151排出至外部。排出之處理液輸送至排液處理裝置(未圖示)進行處理。A drain pipe 151 is connected to the bottom wall of the inner tank 112 . A valve 152 is arranged in the drain pipe 151 . The valve 152 is opened and closed by the control device 180 . By opening the valve 152, the treatment liquid stored in the inner tank 112 is discharged to the outside through the drain pipe 151. The discharged treatment liquid is transported to a discharge treatment device (not shown) for processing.

配管141中連接排液配管153。此處,排液配管153於較泵142更下游處與配管141連接。配管141中,於與排液配管153之連接部之下游配置閥154。閥155位於排液配管153。藉由打開閥154且關閉閥155,處理槽110之處理液可通過配管141返回至處理槽110,可將處理槽110之處理液循環。又,藉由關閉閥154且打開閥155,處理槽110之處理液可通過配管141及排液配管153排出。A drain pipe 153 is connected to the pipe 141 . Here, the drain pipe 153 is connected to the pipe 141 downstream of the pump 142 . In the pipe 141, a valve 154 is arranged downstream of the connection part with the drain pipe 153. The valve 155 is located in the drain pipe 153 . By opening the valve 154 and closing the valve 155, the treatment liquid in the treatment tank 110 can be returned to the treatment tank 110 through the pipe 141, and the treatment liquid in the treatment tank 110 can be circulated. Furthermore, by closing the valve 154 and opening the valve 155, the processing liquid in the processing tank 110 can be discharged through the pipe 141 and the drain pipe 153.

另,圖2中,為避免圖式過於複雜,顯示出1個調整閥145及1個閥146,但調整閥145及閥146之至少一者亦可設置複數個。In addition, in FIG. 2 , in order to avoid overly complicating the diagram, one adjustment valve 145 and one valve 146 are shown, but at least one of the adjustment valves 145 and 146 may be provided in plural numbers.

控制裝置180例如使用微型電腦構成。控制裝置180具有中央處理運算器(Central Processing Unit:CPU)等運算單元、固定記憶體器件、硬碟等記憶單元、及輸入輸出單元。記憶單元中記憶有運算單元執行之程式。The control device 180 is configured using a microcomputer, for example. The control device 180 has a computing unit such as a central processing unit (CPU), a fixed memory device, a memory unit such as a hard disk, and an input/output unit. The memory unit stores programs executed by the arithmetic unit.

接著,參考圖1~圖3,說明本發明之基板處理裝置100之實施形態。圖3係本實施形態之基板處理裝置100之模式性方塊圖。Next, an embodiment of the substrate processing apparatus 100 of the present invention will be described with reference to FIGS. 1 to 3 . FIG. 3 is a schematic block diagram of the substrate processing apparatus 100 of this embodiment.

如圖3所示,控制裝置180具備控制部182及記憶部184。控制部182控制基板處理裝置100之各部之動作。As shown in FIG. 3 , the control device 180 includes a control unit 182 and a storage unit 184 . The control unit 182 controls the operations of each unit of the substrate processing apparatus 100 .

控制部182包含處理器。處理器例如具有中央處理運算器(Central Processing Unit:CPU)。或,處理器亦可具有泛用運算器。The control unit 182 includes a processor. The processor has, for example, a central processing unit (Central Processing Unit: CPU). Alternatively, the processor may also have a general-purpose arithmetic unit.

記憶部184記憶資料及電腦程式。記憶部184包含主記憶裝置及輔助記憶裝置。主記憶裝置例如為半導體記憶體。輔助記憶裝置例如為半導體記憶體及/或硬碟。記憶部184亦可包含可移除媒體。控制部182之處理器執行記憶部184所記憶之電腦程式,而執行基板處理方法。The memory unit 184 stores data and computer programs. The memory unit 184 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk. Memory 184 may also include removable media. The processor of the control unit 182 executes the computer program stored in the memory unit 184 to execute the substrate processing method.

控制裝置180依照預設之程式,控制基板保持部120、硫酸供給部132、過氧化氫供給部134、循環部140及排液部150。詳細而言,控制裝置180控制升降單元126、泵142、過濾器143、加熱器144等之動作。又,控制裝置180控制閥132b、閥134b、閥146、閥152、閥154、閥155之開閉動作。再者,控制裝置180控制調整閥145之開度調整動作。The control device 180 controls the substrate holding part 120, the sulfuric acid supply part 132, the hydrogen peroxide supply part 134, the circulation part 140 and the liquid discharge part 150 according to a preset program. Specifically, the control device 180 controls the operations of the lifting unit 126, the pump 142, the filter 143, the heater 144, and the like. Furthermore, the control device 180 controls the opening and closing operations of the valves 132b, 134b, 146, 152, 154, and 155. Furthermore, the control device 180 controls the opening adjustment action of the adjustment valve 145 .

基板處理裝置100具有濃度感測器162。濃度感測器162測定處理槽110內之處理液中之硫酸濃度及過氧化氫濃度。The substrate processing apparatus 100 has a concentration sensor 162 . The concentration sensor 162 measures the sulfuric acid concentration and the hydrogen peroxide concentration in the treatment liquid in the treatment tank 110 .

例如,濃度感測器162安裝於處理槽110。濃度感測器162測量表示處理槽110所貯存之處理液之比重之值。濃度感測器162測量處理槽110之背壓。For example, the concentration sensor 162 is installed in the treatment tank 110 . The concentration sensor 162 measures a value indicating the specific gravity of the treatment liquid stored in the treatment tank 110 . The concentration sensor 162 measures the back pressure of the processing tank 110 .

例如,濃度感測器162之前端配置於距處理槽110之處理液面特定深度之位置。於濃度感測器162中,對濃度感測器162之前端供給氣體,於處理槽110之處理液內形成氣泡。藉此,檢測貯存於處理槽110之處理液之液壓,作為配置於距處理槽110之液面特定深度之位置之濃度感測器162之前端部之氣壓。作為氣體,典型而言使用氮氣。藉由預先測定氣壓與處理液之硫酸濃度、過氧化氫濃度之關係,事先製作表示氣壓與處理液之關係之對照表,可根據由氣體形成氣泡之氣壓測量處理液之比重。For example, the front end of the concentration sensor 162 is disposed at a specific depth from the processing liquid level of the processing tank 110 . In the concentration sensor 162 , gas is supplied to the front end of the concentration sensor 162 to form bubbles in the processing liquid in the processing tank 110 . Thereby, the hydraulic pressure of the processing liquid stored in the processing tank 110 is detected as the air pressure at the front end of the concentration sensor 162 arranged at a specific depth from the liquid level of the processing tank 110 . As the gas, nitrogen gas is typically used. By measuring the relationship between the air pressure and the sulfuric acid concentration and hydrogen peroxide concentration of the treatment liquid in advance, and making a comparison table showing the relationship between the air pressure and the treatment liquid in advance, the specific gravity of the treatment liquid can be measured based on the air pressure at which bubbles are formed by the gas.

又,控制部182藉由執行記憶於記憶部184之電腦程式,而作為基板資訊取得部182a及處理液調整步驟選擇部182b發揮功能。因此,控制部182包含基板資訊取得部182a及處理液調整步驟選擇部182b。In addition, the control unit 182 functions as the substrate information acquisition unit 182a and the processing liquid adjustment step selection unit 182b by executing the computer program stored in the memory unit 184. Therefore, the control unit 182 includes a substrate information acquisition unit 182a and a processing liquid adjustment step selection unit 182b.

基板資訊取得部182a於基板處理裝置100處理基板W之前,取得表示基板W相關之資訊之基板資訊。基板資訊亦可顯示於將基板W搬入至基板處理裝置100之前進行之處理。The substrate information acquisition unit 182a acquires substrate information indicating information related to the substrate W before the substrate W is processed by the substrate processing apparatus 100. The substrate information may also display the processing performed before the substrate W is loaded into the substrate processing apparatus 100 .

處理液調整步驟選擇部182b選擇進行液體更換步驟及濃度調整步驟之哪一者,作為調整處理槽110之處理液之處理液調整步驟。處理液調整步驟選擇部182b基於基板資訊,選擇液體更換步驟及濃度調整步驟之任一者。稍後敘述液體更換步驟及濃度調整步驟。The processing liquid adjustment step selection unit 182b selects which of the liquid replacement step and the concentration adjustment step is to be performed as a processing liquid adjustment step for adjusting the processing liquid in the processing tank 110 . The processing liquid adjustment step selection unit 182b selects either a liquid replacement step or a concentration adjustment step based on the substrate information. The liquid replacement procedure and concentration adjustment procedure will be described later.

再者,控制部182藉由執行記憶於記憶部184之電腦程式,而作為處理液資訊取得部182c發揮功能。因此,控制部182包含處理液資訊取得部182c。處理液資訊取得部182c取得表示處理槽110之處理液相關之資訊之處理液資訊。例如,處理液資訊取得部182c基於濃度感測器162之測定結果取得處理液資訊。Furthermore, the control unit 182 functions as the processing liquid information acquisition unit 182c by executing the computer program stored in the memory unit 184. Therefore, the control unit 182 includes a processing liquid information acquisition unit 182c. The processing liquid information acquisition unit 182c acquires processing liquid information indicating information related to the processing liquid in the processing tank 110 . For example, the processing liquid information acquisition unit 182 c obtains the processing liquid information based on the measurement result of the concentration sensor 162 .

接著,參考圖1~圖4,說明本實施形態之基板處理方法。圖4係本實施形態之基板處理方法之流程圖。Next, the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 4 . FIG. 4 is a flow chart of the substrate processing method of this embodiment.

如圖4所示,步驟S10中,取得表示基板處理裝置100所處理之基板相關之資訊之基板資訊。例如,基板資訊取得部182a自記憶部184取得基板資訊。As shown in FIG. 4 , in step S10 , substrate information indicating information related to the substrate processed by the substrate processing apparatus 100 is obtained. For example, the substrate information acquisition unit 182a acquires the substrate information from the storage unit 184.

例如,基板資訊顯示於搬入至基板處理裝置100之前對基板W進行之處理。一例中,基板資訊顯示於將基板W搬入至基板處理裝置100之前已對抗蝕劑進行灰化處理。或,基板資訊顯示於將基板W搬入至基板處理裝置100之前已對抗蝕劑進行離子注入。或,基板資訊顯示基板W為進行元件分離氧化處理之前之狀態。For example, the substrate information displays the processing performed on the substrate W before being loaded into the substrate processing apparatus 100 . In one example, the substrate information shows that the resist has been ashed before the substrate W is loaded into the substrate processing apparatus 100 . Or, the substrate information shows that the resist has been ion-implanted before the substrate W is loaded into the substrate processing apparatus 100 . Or, the substrate information shows that the substrate W is in a state before component separation and oxidation treatment.

步驟S20中,選擇處理液調整步驟。控制部182基於基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為處理液調整步驟。例如,處理液調整步驟選擇部182b選擇液體更換步驟及濃度調整步驟之任一者。In step S20, a processing liquid adjustment step is selected. The control unit 182 selects either a liquid replacement step or a concentration adjustment step as the processing liquid adjustment step based on the substrate information. For example, the processing liquid adjustment step selection unit 182b selects either a liquid replacement step or a concentration adjustment step.

例如,於基板W係即便於將適當處理成為基板處理裝置100之處理對象之對象基板所需之處理液之濃度範圍設定得相對寬鬆時,亦可適當處理之基板,於該情形時,控制部182選擇液體更換步驟作為處理液調整步驟。作為一例,於為自已對抗蝕劑進行灰化處理之基板去除殘渣而處理基板之情形時,即便相對寬鬆地設定處理液之濃度範圍,亦可適當地處理基板。因此,於基板係已對抗蝕劑進行灰化處理後之基板之情形時,控制部182選擇液體更換步驟。For example, when the substrate W is a substrate that can be appropriately processed even if the concentration range of the processing liquid required to appropriately process the target substrate to be processed by the substrate processing apparatus 100 is set relatively loosely, in this case, the control unit 182 Select the liquid replacement step as the treatment fluid adjustment step. As an example, when processing a substrate for removing residues from a substrate that has been subjected to ashing treatment of a resist, the substrate can be appropriately processed even if the concentration range of the processing liquid is set relatively loosely. Therefore, when the substrate is a substrate that has undergone ashing treatment of the resist, the control unit 182 selects the liquid replacement step.

另一方面,於基板W係除非將適當處理對象基板所需之處理液之濃度範圍設定得相對狹窄,否則無法適當地處理之基板之情形時,控制部182選擇濃度調整步驟作為處理液調整步驟。作為一例,於基板W具有已進行離子注入之抗蝕劑之情形時,除非相對嚴格地設定處理液之濃度範圍,否則無法適當地去除、剝離抗蝕劑。因此,於基板W係具有已進行離子注入之抗蝕劑之基板之情形時,控制部182選擇濃度調整步驟。On the other hand, when the substrate W is a substrate that cannot be processed appropriately unless the concentration range of the processing liquid required to properly process the target substrate is set to a relatively narrow range, the control unit 182 selects the concentration adjustment step as the processing liquid adjustment step. . As an example, when the substrate W has a resist that has been ion-implanted, the resist cannot be properly removed or stripped unless the concentration range of the processing liquid is set relatively strictly. Therefore, when the substrate W is a substrate having a resist that has been ion-implanted, the control unit 182 selects the concentration adjustment step.

或,於對元件分離後之基板進行氧化處理之情形時,除非相對嚴格地設定處理液之濃度範圍,否則無法適當地處理基板。因此,於基板W係元件分離後要被氧化處理之基板之情形時,控制部182選擇濃度調整步驟。Or, when the substrate after device separation is subjected to oxidation treatment, the substrate cannot be properly processed unless the concentration range of the processing liquid is set relatively strictly. Therefore, when the substrate W is a substrate to be oxidized after component separation, the control unit 182 selects the concentration adjustment step.

如此,控制部182基於基板資訊,對於處理槽110之處理液選擇液體更換步驟及濃度調整步驟之任一者。典型而言,於對象基板到達基板處理裝置100之前,控制部182基於基板資訊選擇處理液調整步驟。In this way, the control unit 182 selects either a liquid replacement step or a concentration adjustment step for the processing liquid in the processing tank 110 based on the substrate information. Typically, before the target substrate reaches the substrate processing apparatus 100, the control unit 182 selects a processing liquid adjustment step based on the substrate information.

於步驟S20中選擇液體更換步驟之情形時,處理進行至步驟S30。另一方面,於步驟S20中選擇濃度調整步驟之情形時,處理進行至步驟S40。When the liquid replacement step is selected in step S20, the process proceeds to step S30. On the other hand, when the density adjustment step is selected in step S20, the process proceeds to step S40.

於步驟S30中,進行液體更換步驟。藉由液體更換步驟,調整處理槽110之處理液。本說明書中,有時將選擇液體更換步驟時之處理液之調整記載為第1處理液調整步驟。In step S30, a liquid replacement step is performed. Through the liquid replacement step, the processing liquid in the processing tank 110 is adjusted. In this manual, the adjustment of the processing liquid when the liquid replacement step is selected may be described as the first processing liquid adjustment step.

該情形時,判定處理槽110之處理液是否滿足基準。基準可基於處理槽110之處理液之硫酸濃度及/或過氧化氫濃度而設定。In this case, it is determined whether the processing liquid in the processing tank 110 satisfies the standard. The standard may be set based on the sulfuric acid concentration and/or hydrogen peroxide concentration of the treatment liquid in the treatment tank 110 .

或,基準亦可基於自將處理槽110之處理液進行液體更換起之時間而設定。或,基準亦可基於在對處理槽110之處理液進行液體更換後所處理之基板W之組數而設定。基準亦可基於自將前一塊基板浸漬至處理槽110之處理液起經過之時間而設定。Alternatively, the reference may be set based on the time since the processing liquid in the processing tank 110 was replaced. Alternatively, the reference may be set based on the number of groups of substrates W processed after the processing liquid in the processing tank 110 is replaced. The reference may also be set based on the elapsed time since the previous substrate was immersed in the processing liquid of the processing tank 110 .

於處理槽110之處理液滿足基準之情形時,不排出處理槽110之處理液。但,即便於該情形時,為維持過氧化氫水之分解之過氧化氫濃度,過氧化氫供給部134亦可以固定量對處理槽110持續供給過氧化氫水。When the treatment liquid in the treatment tank 110 meets the standard, the treatment liquid in the treatment tank 110 is not discharged. However, even in this case, in order to maintain the hydrogen peroxide concentration at which the hydrogen peroxide water is decomposed, the hydrogen peroxide supply unit 134 may continue to supply hydrogen peroxide water to the treatment tank 110 in a fixed amount.

另一方面,於處理槽110之處理液不滿足基準之情形時,對處理槽110之處理液之至少一部分進行更換。該情形時,排出處理槽110之處理液之至少一部分,另一方面,對處理槽110供給處理液。On the other hand, when the processing liquid in the processing tank 110 does not meet the standard, at least part of the processing liquid in the processing tank 110 is replaced. In this case, at least part of the processing liquid in the processing tank 110 is discharged, and on the other hand, the processing liquid is supplied to the processing tank 110 .

於排出處理槽110之處理液之情形時,一例中,排出外槽114之處理液。該情形時,控制部182驅動泵142,打開閥155並關閉閥154。藉此,可排出外槽114之處理液。又,排出內槽112之處理液。例如,控制部182藉由打開閥152,而排出內槽112之處理液。When the treatment liquid in the treatment tank 110 is discharged, in one example, the treatment liquid in the outer tank 114 is discharged. In this case, the control unit 182 drives the pump 142 to open the valve 155 and close the valve 154. Thereby, the processing liquid in the outer tank 114 can be discharged. Furthermore, the treatment liquid in the inner tank 112 is discharged. For example, the control unit 182 opens the valve 152 to discharge the processing liquid in the inner tank 112 .

又,對處理槽110供給處理液。該情形時,處理液供給部130對處理槽110供給處理液。例如,硫酸供給部132對處理槽110供給硫酸。過氧化氫供給部134對處理槽110供給過氧化氫水。藉此,調整處理槽110之處理液。硫酸供給部132及過氧化氫供給部134以處理槽110中被供給之包含硫酸及過氧化氫水之處理液成為特定濃度之比例,分別供給硫酸及過氧化氫水。該情形時,藉由與硫酸及過氧化氫水之反應,處理液之溫度上升。Furthermore, the processing liquid is supplied to the processing tank 110 . In this case, the processing liquid supply unit 130 supplies the processing liquid to the processing tank 110 . For example, the sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110 . The hydrogen peroxide supply unit 134 supplies hydrogen peroxide water to the treatment tank 110 . Thereby, the processing liquid in the processing tank 110 is adjusted. The sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 respectively supply sulfuric acid and hydrogen peroxide water in a ratio such that the treatment liquid containing sulfuric acid and hydrogen peroxide water supplied to the treatment tank 110 reaches a specific concentration. In this case, the temperature of the treatment liquid rises due to the reaction with sulfuric acid and hydrogen peroxide water.

另,為將處理液維持特定溫度,可藉由驅動泵142及加熱器144,使處理液一面循環一面加熱。該情形時,加熱器144根據需要將處理液加熱。例如,於處理液之溫度低於特定溫度之情形時,加熱器144以上升至特定溫度之方式將處理液加熱。另一方面,當藉由與硫酸及過氧化氫水之反應而處理液之溫度上升至高於特定溫度時,加熱器144以下降至處理液之溫度之方式停止處理液之加熱。接著,處理進行至步驟S50A。In addition, in order to maintain the processing liquid at a specific temperature, the pump 142 and the heater 144 can be driven to circulate and heat the processing liquid. In this case, the heater 144 heats the processing liquid as necessary. For example, when the temperature of the processing liquid is lower than a specific temperature, the heater 144 heats the processing liquid by raising the temperature to a specific temperature. On the other hand, when the temperature of the treatment liquid rises above a specific temperature due to the reaction with sulfuric acid and hydrogen peroxide water, the heater 144 stops heating the treatment liquid in a manner to lower the temperature of the treatment liquid. Next, the process proceeds to step S50A.

步驟S50A中,將基板W浸漬於處理槽110之處理液中。其後,自處理槽110之處理液取出基板W。如上結束基板處理。In step S50A, the substrate W is immersed in the processing liquid of the processing tank 110 . Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110 . The substrate processing is completed as above.

步驟S40中,進行濃度調整步驟。藉由濃度調整步驟,調整處理槽110之處理液。本說明書中,有時將選擇濃度調整步驟時之處理液之調整記載為第2處理液調整步驟。In step S40, a density adjustment step is performed. Through the concentration adjustment step, the treatment liquid in the treatment tank 110 is adjusted. In this specification, the adjustment of the treatment liquid when the concentration adjustment step is selected may be described as the second treatment liquid adjustment step.

該情形時,調整處理槽110之處理液之濃度。例如,調整處理槽110之處理液中之過氧化氫濃度。一例中,增加處理槽110之處理液中之過氧化氫濃度。In this case, the concentration of the treatment liquid in the treatment tank 110 is adjusted. For example, the hydrogen peroxide concentration in the treatment liquid of the treatment tank 110 is adjusted. In one example, the concentration of hydrogen peroxide in the treatment liquid of the treatment tank 110 is increased.

或,調整處理槽110之處理液中之硫酸濃度。一例中,增加處理槽110之處理液中之硫酸濃度。Or, adjust the sulfuric acid concentration in the treatment liquid of the treatment tank 110 . In one example, the concentration of sulfuric acid in the treatment liquid of the treatment tank 110 is increased.

典型而言,處理液供給部130對處理槽110供給處理液。例如,硫酸供給部132對處理槽110供給硫酸。過氧化氫供給部134對處理槽110供給過氧化氫水。硫酸供給部132及過氧化氫供給部134以處理槽110中被供給之包含硫酸及過氧化氫水之處理液成為特定濃度之比例,分別供給硫酸及過氧化氫水。Typically, the processing liquid supply unit 130 supplies the processing liquid to the processing tank 110 . For example, the sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110 . The hydrogen peroxide supply unit 134 supplies hydrogen peroxide water to the treatment tank 110 . The sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 respectively supply sulfuric acid and hydrogen peroxide water in a ratio such that the treatment liquid containing sulfuric acid and hydrogen peroxide water supplied to the treatment tank 110 reaches a specific concentration.

例如,於增加處理槽110之處理液中之過氧化氫濃度之情形時,硫酸供給部132及過氧化氫供給部134以增大過氧化氫水之比率而使處理槽110中之過氧化氫濃度增加之方式,供給硫酸及過氧化氫水。For example, when the concentration of hydrogen peroxide in the treatment liquid of the treatment tank 110 is increased, the sulfuric acid supply part 132 and the hydrogen peroxide supply part 134 increase the ratio of hydrogen peroxide water to increase the hydrogen peroxide concentration in the treatment tank 110 . To increase the concentration, supply sulfuric acid and hydrogen peroxide water.

該情形時,使處理槽110之處理液循環。此處,為將處理液維持特定溫度,亦可藉由驅動泵142及加熱器144,使處理液一面循環一面加熱。In this case, the treatment liquid in the treatment tank 110 is circulated. Here, in order to maintain the processing liquid at a specific temperature, the pump 142 and the heater 144 may be driven to circulate and heat the processing liquid.

控制部182供給硫酸及過氧化氫水,直至濃度感測器162中測定出之硫酸濃度及/或過氧化氫濃度成為特定濃度為止。又,控制部182以濃度感測器162中測定出之硫酸濃度及/或過氧化氫濃度維持特定濃度之方式,供給硫酸及過氧化氫水。如此,控制部182可使用濃度感測器162,藉由反饋控制調整硫酸濃度及/或過氧化氫濃度。另,濃度調整於將基板W浸漬於處理槽110之前一刻進行,於遍歷特定期間未將基板W浸漬於處理槽110之情形時,優選為不進行濃度調整。接著,處理進行至步驟S50B。The control unit 182 supplies sulfuric acid and hydrogen peroxide water until the sulfuric acid concentration and/or the hydrogen peroxide concentration measured by the concentration sensor 162 reaches a specific concentration. Furthermore, the control unit 182 supplies sulfuric acid and hydrogen peroxide water so that the sulfuric acid concentration and/or the hydrogen peroxide concentration measured by the concentration sensor 162 are maintained at a specific concentration. In this way, the control unit 182 can use the concentration sensor 162 to adjust the sulfuric acid concentration and/or the hydrogen peroxide concentration through feedback control. In addition, the concentration adjustment is performed immediately before the substrate W is immersed in the treatment tank 110. When the substrate W is not immersed in the treatment tank 110 for a specific period, it is preferable that the concentration adjustment is not performed. Next, the process proceeds to step S50B.

步驟S50B中,將基板浸漬於已進行過氧化氫濃度之調整之處理液中。其後,自處理槽110之處理液取出基板W。如上結束基板處理。In step S50B, the substrate is immersed in the treatment liquid in which the concentration of hydrogen peroxide has been adjusted. Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110 . The substrate processing is completed as above.

根據本實施形態,由根據基板W以不同之態樣調整後之處理液處理基板。例如,於基板處理裝置100中要處理之基板亦可由調整為相對寬鬆之濃度範圍之處理液處理之情形時,於液體更換步驟中調整處理槽110之處理液。藉此,僅於不滿足基準之情形時,對處理槽110之處理液進行液體更換。因此,可抑制處理槽110之處理液之更換頻率,可減少處理液之成本。又,於基板處理裝置100中要處理之基板需以調整為相對嚴格之濃度範圍之處理液處理之情形時,於濃度調整步驟中調整處理槽110之處理液。藉此,可避免於未搬入基板之情形時以濃度調整後之狀態維持處理槽110之處理液,且適當地處理搬入之基板。因此,根據本實施形態,可根據基板W避免硫酸及過氧化氫水之過量使用。According to this embodiment, the substrate W is processed with the processing liquid adjusted in different ways according to the substrate W. For example, when the substrate to be processed in the substrate processing apparatus 100 can also be processed by a processing liquid adjusted to a relatively loose concentration range, the processing liquid in the processing tank 110 is adjusted in the liquid replacement step. Thereby, the processing liquid in the processing tank 110 is replaced only when the standard is not met. Therefore, the replacement frequency of the treatment liquid in the treatment tank 110 can be suppressed, and the cost of the treatment liquid can be reduced. In addition, when the substrate to be processed in the substrate processing apparatus 100 needs to be processed with a processing liquid adjusted to a relatively strict concentration range, the processing liquid in the processing tank 110 is adjusted in the concentration adjustment step. Thereby, it is possible to avoid maintaining the processing liquid in the processing tank 110 in a concentration-adjusted state when the substrate has not been loaded, and to properly process the loaded substrate. Therefore, according to this embodiment, excessive use of sulfuric acid and hydrogen peroxide water can be avoided depending on the substrate W.

接著,參考圖1~圖5,說明本實施形態之基板處理裝置100之液體更換步驟。圖5(a)~圖5(c)係用以說明本實施形態之基板處理方法中之液體更換步驟之模式圖。Next, the liquid replacement procedure of the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 5 . 5(a) to 5(c) are schematic diagrams for explaining the liquid replacement step in the substrate processing method of this embodiment.

如圖5(a)所示,於處理槽110中貯存處理液。此處,於內槽112及外槽114各者貯存有定量之處理液。如上所述,自內槽112溢出之處理液流入至外槽114。將內槽112之定量設定為內槽112之容器之最大量。As shown in FIG. 5(a) , the treatment liquid is stored in the treatment tank 110 . Here, a certain amount of processing liquid is stored in each of the inner tank 112 and the outer tank 114 . As mentioned above, the treatment liquid overflowing from the inner tank 112 flows into the outer tank 114 . The quantitative quantity of the inner tank 112 is set to the maximum quantity of containers in the inner tank 112 .

將外槽114之定量設定為少於外槽114之容器之最大量之量。當多於定量之處理液流入至外槽114時,控制部182驅動泵142使外槽114之處理液流出至外部。The quantity of the outer tank 114 is set to be less than the maximum quantity of containers in the outer tank 114 . When more than a certain amount of the treatment liquid flows into the outer tank 114, the control unit 182 drives the pump 142 to cause the treatment liquid in the outer tank 114 to flow out to the outside.

如圖5(b)所示,排出處理槽110之處理液。例如,於排出內槽112之處理液之情形時,控制部182打開閥152排出內槽112之處理液。As shown in FIG. 5(b) , the processing liquid in the processing tank 110 is discharged. For example, when the processing liquid in the inner tank 112 is discharged, the control unit 182 opens the valve 152 to discharge the processing liquid in the inner tank 112 .

又,於排出外槽114之處理液之情形時,控制部182藉由驅動泵142且關閉閥154並打開閥155,而排出外槽114之處理液。When the processing liquid in the outer tank 114 is discharged, the control unit 182 drives the pump 142 and closes the valve 154 and opens the valve 155 to discharge the processing liquid in the outer tank 114 .

自處理槽110排出之處理液之量亦可根據自上一次進行液體更換起經過之時間而設定。例如,於自上一次進行液體更換起經過之時間相對較長之情形時,將自處理槽110排出之處理液之量設定得相對較多。反之,於自上一次進行液體更換起經過之時間相對較短之情形時,將自處理槽110排出之處理液之量設定得相對較少。The amount of treatment liquid discharged from the treatment tank 110 can also be set based on the time elapsed since the last liquid replacement was performed. For example, when the elapsed time since the last liquid replacement was performed is relatively long, the amount of the processing liquid discharged from the processing tank 110 is set to be relatively large. On the contrary, when the time elapsed since the last liquid replacement was performed is relatively short, the amount of the processing liquid discharged from the processing tank 110 is set to be relatively small.

或,自處理槽110排出之處理液之量亦可根據自上一次浸漬基板起經過之時間而設定。於自上一次浸漬基板起經過之時間相對較長之情形時,將自處理槽110排出之處理液之量設定得相對較多。反之,於自上一次浸漬基板起經過之時間相對較短之情形時,將自處理槽110排出之處理液之量設定得相對較少。Alternatively, the amount of processing liquid discharged from the processing tank 110 may also be set based on the time that has elapsed since the last time the substrate was immersed. When the elapsed time since the last immersion of the substrate is relatively long, the amount of the processing liquid discharged from the processing tank 110 is set to be relatively large. On the contrary, when the elapsed time since the last immersion of the substrate is relatively short, the amount of the processing liquid discharged from the processing tank 110 is set to be relatively small.

典型而言,於自處理槽110排出處理液之情形時,處理槽110之處理液不循環。但,亦可一面使處理槽110之處理液循環,一面自處理槽110排出處理液。Typically, when the treatment liquid is discharged from the treatment tank 110, the treatment liquid in the treatment tank 110 is not circulated. However, it is also possible to discharge the treatment liquid from the treatment tank 110 while circulating the treatment liquid in the treatment tank 110 .

如圖5(c)所示,處理液供給部130對處理槽110供給處理液。詳細而言,硫酸供給部132對處理槽110供給硫酸。又,過氧化氫供給部134對處理槽110供給過氧化氫水。該情形時,控制部182以硫酸供給部132及過氧化氫供給部134分別對處理槽110供給硫酸及過氧化氫水之方式,控制硫酸供給部132及過氧化氫供給部134。As shown in FIG. 5(c) , the processing liquid supply unit 130 supplies the processing liquid to the processing tank 110 . Specifically, the sulfuric acid supply unit 132 supplies sulfuric acid to the treatment tank 110 . In addition, the hydrogen peroxide supply unit 134 supplies hydrogen peroxide water to the treatment tank 110 . In this case, the control unit 182 controls the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 so that the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide water to the treatment tank 110 , respectively.

於對處理槽110供給處理液後,處理槽110之處理液經由循環部140循環。例如,控制部182驅動泵142打開調整閥145、閥146,且打開閥154關閉閥155,藉此使處理槽110之處理液自處理槽110通過配管141循環至處理槽110。又,藉由控制部182驅動加熱器144,而將流過配管141之處理液加熱。After the processing liquid is supplied to the processing tank 110 , the processing liquid in the processing tank 110 is circulated through the circulation unit 140 . For example, the control unit 182 drives the pump 142 to open the regulating valve 145 and the valve 146, and opens the valve 154 and closes the valve 155, thereby circulating the treatment liquid in the treatment tank 110 from the treatment tank 110 to the treatment tank 110 through the pipe 141. Furthermore, the controller 182 drives the heater 144 to heat the processing liquid flowing through the pipe 141 .

此時,為維持處理槽110內之處理液,硫酸供給部132及過氧化氫供給部134可對處理槽110供給硫酸及過氧化氫水。自硫酸供給部132供給之硫酸及自過氧化氫供給部134供給之過氧化氫水之量之比率與液體更換前相同。At this time, in order to maintain the treatment liquid in the treatment tank 110, the sulfuric acid supply part 132 and the hydrogen peroxide supply part 134 can supply sulfuric acid and hydrogen peroxide water to the treatment tank 110. The ratio of the amounts of sulfuric acid supplied from the sulfuric acid supply part 132 and the amount of hydrogen peroxide water supplied from the hydrogen peroxide supply part 134 is the same as before the liquid replacement.

如上所述,可藉由液體更換,調整處理槽110之處理液。根據本實施形態,可排出處理槽110之處理液之一部分且對處理槽110供給處理液。因此,可將處理槽110之處理液迅速調整為適於基板處理之處理條件。又,由於未完全廢棄處理槽110之處理液,故可減少基板處理成本。As mentioned above, the processing liquid in the processing tank 110 can be adjusted by liquid replacement. According to this embodiment, part of the processing liquid in the processing tank 110 can be discharged and the processing liquid can be supplied to the processing tank 110 . Therefore, the processing liquid in the processing tank 110 can be quickly adjusted to processing conditions suitable for substrate processing. In addition, since the processing liquid in the processing tank 110 is not completely discarded, the substrate processing cost can be reduced.

接著,參考圖1~圖6,說明本實施形態之基板處理方法中之液體更換步驟。圖6係顯示本實施形態之基板處理方法中液體更換步驟時之處理槽110內之硫酸濃度及過氧化氫濃度之時間變化之圖表。圖6中,線Lsp表示硫酸濃度之時間變化。線Lhp表示過氧化氫濃度之時間變化。Next, the liquid replacement step in the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 6 . FIG. 6 is a graph showing temporal changes in the sulfuric acid concentration and the hydrogen peroxide concentration in the processing tank 110 during the liquid replacement step in the substrate processing method of this embodiment. In Fig. 6, line Lsp represents the time change of the sulfuric acid concentration. The line Lhp represents the temporal change in hydrogen peroxide concentration.

如線Lsp所示,於液體更換期間Pp之前,硫酸濃度大致固定。但,嚴格而言,硫酸濃度會隨著時間之經過而逐減低。這是因為於處理槽110內過氧化氫水與硫酸反應分解而產生水。As shown by the line Lsp, the sulfuric acid concentration is approximately constant until the liquid replacement period Pp. However, strictly speaking, the sulfuric acid concentration will gradually decrease over time. This is because hydrogen peroxide water reacts and decomposes with sulfuric acid in the treatment tank 110 to produce water.

於液體更換期間Pp,處理槽110之處理液至少部分地排出。又,於液體更換期間Pp,重新對處理槽110供給硫酸及過氧化氫水。典型而言,於開始排出處理槽110內之處理液後,對處理槽110供給新的處理液。但,處理槽110內之處理液之排出及供給亦可於任意時序進行。During the liquid replacement period Pp, the treatment liquid in the treatment tank 110 is at least partially drained. In addition, during the liquid replacement period Pp, sulfuric acid and hydrogen peroxide water are supplied to the treatment tank 110 again. Typically, after the treatment liquid in the treatment tank 110 starts to be discharged, new treatment liquid is supplied to the treatment tank 110 . However, the processing liquid in the processing tank 110 can be discharged and supplied at any timing.

於液體更換期間Pp之後,與液體更換期間Pp之前相比,硫酸濃度增加。其後,硫酸濃度隨著時間之經過而逐漸減低。After the liquid replacement period Pp, the sulfuric acid concentration increases compared to before the liquid replacement period Pp. Thereafter, the sulfuric acid concentration gradually decreased with the passage of time.

如線Lhp所示,於液體更換期間Pp之前,過氧化氫濃度大致固定。但,嚴格而言,過氧化氫濃度隨著時間之經過而逐漸減低。這是因為於處理槽110內過氧化氫水與硫酸反應分解而產生水。As shown by the line Lhp, the hydrogen peroxide concentration is approximately constant until the liquid replacement period Pp. However, strictly speaking, the concentration of hydrogen peroxide gradually decreases over time. This is because hydrogen peroxide water reacts and decomposes with sulfuric acid in the treatment tank 110 to produce water.

於液體更換期間Pp結束後,與液體更換期間Pp之前相比,過氧化氫濃度增加。其後,過氧化氫濃度隨著時間之經過而減低。After the liquid replacement period Pp ends, the hydrogen peroxide concentration increases compared to before the liquid replacement period Pp. Thereafter, the hydrogen peroxide concentration decreases with the passage of time.

另,於圖6中,於液體更換期間Pp之前及之後,使處理槽110之處理液一面經由循環部160循環一面加熱。亦可於液體更換期間Pp,使處理槽110之處理液一面經由循環部160循環一面加熱。In addition, in FIG. 6 , before and after the liquid replacement period Pp, the treatment liquid in the treatment tank 110 is heated while circulating through the circulation unit 160 . During the liquid replacement period Pp, the treatment liquid in the treatment tank 110 may be heated while circulating through the circulation unit 160 .

接著,參考圖1~圖7,說明本實施形態之基板處理方法。圖7係於本實施形態之基板處理方法中選擇液體更換步驟時之流程圖。Next, the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 7 . FIG. 7 is a flowchart when a liquid replacement step is selected in the substrate processing method of this embodiment.

如圖7所示,於步驟S102中,判定基板處理裝置100處理之基板W是否為液體更換步驟之對象基板。例如,於基板W為已對抗蝕劑進行灰化處理之基板之情形時,控制部182判定為基板W是液體更換步驟之對象基板。典型而言,於基板到達基板處理裝置100之前,控制部182判定基板W是否為對象基板。As shown in FIG. 7 , in step S102 , it is determined whether the substrate W processed by the substrate processing apparatus 100 is the target substrate of the liquid replacement step. For example, when the substrate W is a substrate that has been ashed with resist, the control unit 182 determines that the substrate W is the target substrate of the liquid replacement step. Typically, before the substrate reaches the substrate processing apparatus 100, the control unit 182 determines whether the substrate W is the target substrate.

於基板W非對象基板之情形時(於步驟S102中否(No)),處理返回至步驟S102。另一方面,於基板W為對象基板之情形時(於步驟S102中是(Yes)),處理進行至步驟S104。When the substrate W is not the target substrate (No in step S102), the process returns to step S102. On the other hand, when the substrate W is the target substrate (Yes in step S102), the process proceeds to step S104.

於步驟S104中,判定處理槽110之處理液是否滿足特定基準。特定基準作為表示不調整處理槽110之處理液即可適當地處理基板W之指標而設定。於處理槽110之處理液滿足特定基準之情形時,不排出處理槽110之處理液。另一方面,於處理槽110之處理液不滿足特定基準之情形時,排出處理槽110之處理液並進行調整。In step S104, it is determined whether the processing liquid in the processing tank 110 meets a specific criterion. The specific standard is set as an index indicating that the substrate W can be appropriately processed without adjusting the processing liquid in the processing tank 110 . When the treatment liquid in the treatment tank 110 meets a specific standard, the treatment liquid in the treatment tank 110 is not discharged. On the other hand, when the treatment liquid in the treatment tank 110 does not meet the specific standard, the treatment liquid in the treatment tank 110 is discharged and adjusted.

特定基準可基於處理槽110之處理液濃度而設定。例如,特定基準基於處理槽110之處理液中之過氧化氫濃度而設定。一例中,於處理槽110之處理液中之過氧化氫濃度為特定值以上之情形時,控制部182判定為滿足特定基準。另一方面,於處理槽110之處理液中之過氧化氫濃度低於特定值之情形時,控制部182判定為不滿足特定基準。The specific standard may be set based on the concentration of the treatment liquid in the treatment tank 110 . For example, the specific reference is set based on the concentration of hydrogen peroxide in the treatment liquid of the treatment tank 110 . In one example, when the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 is equal to or higher than a specific value, the control unit 182 determines that the specific criterion is met. On the other hand, when the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 is lower than a specific value, the control unit 182 determines that the specific criterion is not satisfied.

於處理槽110之處理液滿足特定基準之情形時(於步驟S104中是),處理進行至步驟S112。另一方面,於處理槽110之處理液不滿足特定基準之情形時(於步驟S104中否),處理進行至步驟S106。When the processing liquid in the processing tank 110 meets the specific criterion (YES in step S104), the process proceeds to step S112. On the other hand, when the processing liquid in the processing tank 110 does not satisfy the specific criterion (NO in step S104), the process proceeds to step S106.

步驟S106中,排出處理槽110之處理液。排出貯存於處理槽110之處理液之至少一部分。控制部182藉由驅動泵142,打開閥154並關閉閥155,而排出外槽114之處理液。又,控制部182藉由打開閥152,而排出內槽112之處理液。In step S106, the processing liquid in the processing tank 110 is discharged. At least part of the treatment liquid stored in the treatment tank 110 is discharged. The control unit 182 drives the pump 142 to open the valve 154 and close the valve 155 to discharge the treatment liquid in the outer tank 114 . Furthermore, the control unit 182 opens the valve 152 to discharge the processing liquid in the inner tank 112 .

步驟S108中,對處理槽110供給處理液。處理液供給部130對處理槽110供給處理液。藉由控制部182之控制,硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水。In step S108, the processing liquid is supplied to the processing tank 110. The processing liquid supply unit 130 supplies the processing liquid to the processing tank 110 . Under the control of the control unit 182 , the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 supply sulfuric acid and hydrogen peroxide water to the treatment tank 110 .

步驟S110中,停止對處理槽110供給處理液。藉由控制部182之控制,停止自硫酸供給部132及過氧化氫供給部134對處理槽110供給硫酸及過氧化氫水。In step S110, the supply of the processing liquid to the processing tank 110 is stopped. Under the control of the control unit 182, the supply of sulfuric acid and hydrogen peroxide water from the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 to the treatment tank 110 is stopped.

步驟S112中,一面使處理槽110內之處理液循環,一面將處理液加熱。藉由控制部182之控制,驅動泵142並打開調整閥145、閥146,且打開閥154關閉閥155,藉此使處理槽110之處理液自處理槽110通過配管141循環至處理槽110。又,藉由控制部182之控制,加熱器144將流過配管141之處理液加熱。In step S112, the treatment liquid in the treatment tank 110 is heated while circulating the treatment liquid. Under the control of the control unit 182 , the pump 142 is driven to open the regulating valve 145 and the valve 146 , and opens the valve 154 and closes the valve 155 , thereby circulating the treatment liquid in the treatment tank 110 from the treatment tank 110 to the treatment tank 110 through the pipe 141 . Furthermore, under the control of the control unit 182, the heater 144 heats the processing liquid flowing through the pipe 141.

步驟S114中,判定處理液之溫度是否為特定溫度。於處理液之溫度並非特定溫度之情形時(於步驟S114中否),處理返回至步驟S112。另一方面,於處理液之溫度為特定溫度之情形時(於步驟S114中是),處理進行至步驟S116。In step S114, it is determined whether the temperature of the processing liquid is a specific temperature. When the temperature of the processing liquid is not the specific temperature (NO in step S114), the process returns to step S112. On the other hand, when the temperature of the processing liquid is the specific temperature (YES in step S114), the process proceeds to step S116.

步驟S116中,將基板W浸漬於處理槽110之處理液中。典型而言,基板保持部120於保持有基板W之狀態下朝處理槽110下降,將基板W浸漬於處理槽110之處理液中。此時,處理液供給部130亦可不對處理槽110供給硫酸及過氧化氫水。或,對於處理槽110之處理液,處理液供給部130亦可僅對處理槽110供給過氧化氫水。任一情形時,皆優選為將加熱器144與泵142一起驅動,藉此一面使處理槽110之處理液循環一面將處理槽110之處理液加熱。In step S116, the substrate W is immersed in the processing liquid of the processing tank 110. Typically, the substrate holding part 120 descends toward the processing tank 110 while holding the substrate W, and immerses the substrate W in the processing liquid of the processing tank 110 . At this time, the processing liquid supply unit 130 may not supply sulfuric acid and hydrogen peroxide water to the processing tank 110 . Alternatively, with respect to the treatment liquid in the treatment tank 110 , the treatment liquid supply unit 130 may supply only hydrogen peroxide water to the treatment tank 110 . In any case, it is preferable to drive the heater 144 and the pump 142 together to heat the treatment liquid in the treatment tank 110 while circulating the treatment liquid in the treatment tank 110 .

其後,自處理槽110提起基板W。典型而言,自基板處理裝置100搬出基板W。Thereafter, the substrate W is lifted up from the processing tank 110 . Typically, the substrate W is unloaded from the substrate processing apparatus 100 .

步驟S118中,判定基板處理裝置100接下來要處理之基板W是否為對象基板。典型而言,於下一塊基板到達基板處理裝置100之前,控制部182判定基板W是否為對象基板。In step S118, it is determined whether the substrate W to be processed next by the substrate processing apparatus 100 is a target substrate. Typically, before the next substrate arrives at the substrate processing apparatus 100, the control unit 182 determines whether the substrate W is the target substrate.

於下一塊基板W並非對象基板之情形時(於步驟S118中否),處理結束。另一方面,於下一塊基板W為對象基板之情形時(於步驟S118中是),處理進行至步驟S120。When the next substrate W is not the target substrate (NO in step S118), the process ends. On the other hand, when the next substrate W is the target substrate (YES in step S118), the process proceeds to step S120.

於步驟S120中,判定處理槽110之處理液是否滿足特定基準。特定基準與步驟S104同樣設定。In step S120, it is determined whether the processing liquid in the processing tank 110 meets a specific criterion. The specific criterion is set in the same manner as in step S104.

於處理槽110之處理液不滿足特定基準之情形時(於步驟S120中否),處理返回至步驟S106。另一方面,於處理槽110之處理液滿足特定基準之情形時(於步驟S120中是),處理返回至步驟S116。該情形時,處理液供給部130亦可不對處理槽110之處理液供給硫酸及過氧化氫水。或,處理液供給部130亦可只對處理槽110之處理液供給過氧化氫水。任一情形時,皆優選為將加熱器144與泵142一起驅動,藉此一面使處理槽110之處理液循環一面將處理槽110之處理液加熱。When the processing liquid in the processing tank 110 does not meet the specific criterion (NO in step S120), the process returns to step S106. On the other hand, when the processing liquid in the processing tank 110 meets the specific criterion (Yes in step S120), the process returns to step S116. In this case, the treatment liquid supply unit 130 may not supply sulfuric acid and hydrogen peroxide water to the treatment liquid in the treatment tank 110 . Alternatively, the processing liquid supply unit 130 may supply hydrogen peroxide water only to the processing liquid in the processing tank 110 . In any case, it is preferable to drive the heater 144 and the pump 142 together to heat the treatment liquid in the treatment tank 110 while circulating the treatment liquid in the treatment tank 110 .

本實施形態中,如上所述,於處理槽110之處理液滿足特定基準之情形時,不排出處理液而浸漬基板W。另一方面,於處理槽110之處理液不滿足特定基準之情形時,排出處理槽110之處理液之至少一部分,重新供給硫酸及過氧化氫水,藉此至少部分更換處理槽110之處理液。藉此,可減少更換處理液之液體之次數,且抑制處理液之成本增加。In this embodiment, as described above, when the processing liquid in the processing tank 110 meets a specific criterion, the substrate W is immersed without discharging the processing liquid. On the other hand, when the treatment liquid in the treatment tank 110 does not meet the specific standard, at least part of the treatment liquid in the treatment tank 110 is discharged, and sulfuric acid and hydrogen peroxide water are resupplied, thereby at least partially replacing the treatment liquid in the treatment tank 110 . This can reduce the number of replacements of the treatment liquid and suppress an increase in the cost of the treatment liquid.

如上所述,已參考圖5~圖7,說明本實施形態之基板處理方法中之液體更換步驟及選擇液體更換步驟時之流程圖。另,本實施形態之基板處理方法中之濃度調整步驟如以下般進行。As described above, the flow chart of the liquid replacement step and the selected liquid replacement step in the substrate processing method of this embodiment has been described with reference to FIGS. 5 to 7 . In addition, the concentration adjustment step in the substrate processing method of this embodiment is performed as follows.

接著,參考圖1~圖8,說明本實施形態之基板處理方法中之濃度調整步驟。圖8(a)~圖8(c)係用以說明本實施形態之基板處理方法中之濃度調整步驟之模式圖。Next, the density adjustment step in the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 8 . 8(a) to 8(c) are schematic diagrams for explaining the density adjustment step in the substrate processing method of this embodiment.

如圖8(a)所示,維持處理槽110內之處理液之狀態。此處,於內槽112及外槽114各者貯存有定量之處理液。例如,處理槽110內之處理液藉由一面循環一面加熱,而維持固定之狀態。As shown in FIG. 8(a) , the state of the processing liquid in the processing tank 110 is maintained. Here, a certain amount of processing liquid is stored in each of the inner tank 112 and the outer tank 114 . For example, the treatment liquid in the treatment tank 110 is maintained in a fixed state by being heated while circulating.

例如,處理槽110內之處理液維持硫酸濃度75%以上且90%以下,過氧化氫濃度0.8%以上且2.0%以下,溫度100℃以上且140℃以下之狀態。一例中,處理槽110內維持之處理液為硫酸濃度82%,過氧化氫濃度1.0%,溫度110℃。For example, the treatment liquid in the treatment tank 110 maintains a sulfuric acid concentration of 75% to 90%, a hydrogen peroxide concentration of 0.8% to 2.0%, and a temperature of 100°C to 140°C. In one example, the treatment liquid maintained in the treatment tank 110 has a sulfuric acid concentration of 82%, a hydrogen peroxide concentration of 1.0%, and a temperature of 110°C.

藉由控制部182之控制,維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。Through the control of the control unit 182, the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid are maintained. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 , and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110 . In addition, the heater 144 heats the treatment liquid with a constant amount of electric power.

如圖8(b)所示,調整處理槽110之處理液之濃度。此時,變更自硫酸供給部132供給之硫酸及自過氧化氫供給部134供給之過氧化氫水之量之比率。例如,於即將將基板W浸漬於處理槽110之處理液之前調整處理槽110之處理液之濃度。As shown in FIG. 8(b) , the concentration of the treatment liquid in the treatment tank 110 is adjusted. At this time, the ratio of the amounts of sulfuric acid supplied from the sulfuric acid supply part 132 and the hydrogen peroxide water supplied from the hydrogen peroxide supply part 134 is changed. For example, the concentration of the processing liquid in the processing tank 110 is adjusted just before the substrate W is immersed in the processing liquid in the processing tank 110 .

此處,於維持處理槽110之處理液中之硫酸濃度之狀態下增加過氧化氫濃度。該情形時,控制部182以增加過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度增加為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。Here, the hydrogen peroxide concentration is increased while maintaining the sulfuric acid concentration in the treatment liquid in the treatment tank 110 . In this case, the control unit 182 controls the hydrogen peroxide supply unit 134 to increase the supply amount of hydrogen peroxide water until the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 increases. In addition, the control unit 182 controls the sulfuric acid supply unit 132 to supply sulfuric acid to a level that maintains the sulfuric acid concentration in the treatment liquid in the treatment tank 110 .

一例中,處理槽110內維持之處理液為硫酸濃度82%,過氧化氫濃度1.4%,溫度110℃。In one example, the treatment liquid maintained in the treatment tank 110 has a sulfuric acid concentration of 82%, a hydrogen peroxide concentration of 1.4%, and a temperature of 110°C.

其後,控制部182使基板W浸漬於處理槽110之處理液中,維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度,直至自處理槽110之處理液提起基板W為止。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。Thereafter, the control unit 182 immerses the substrate W in the treatment liquid of the treatment tank 110, and maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid until the substrate W is removed from the treatment tank 110. 110 of the processing liquid until the substrate W is lifted up. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 , and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110 . In addition, the heater 144 heats the treatment liquid with a constant amount of electric power.

控制部182自處理槽110之處理液提起基板W後,變更處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。典型而言,控制部182將處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度之任一者,變更為浸漬基板W之前之狀態。After lifting the substrate W from the processing liquid in the processing tank 110, the control unit 182 changes the temperature of the processing liquid in the processing tank 110, the sulfuric acid concentration of the processing liquid, and the hydrogen peroxide concentration in the processing liquid. Typically, the control unit 182 changes any one of the temperature of the processing liquid in the processing tank 110 , the sulfuric acid concentration of the processing liquid, and the hydrogen peroxide concentration in the processing liquid to the state before the substrate W is immersed.

如圖8(c)所示,恢復處理槽110之處理液之狀態。此處,於維持處理槽110之處理液中之硫酸濃度之狀態下降低過氧化氫濃度。該情形時,控制部182以減少過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度降低為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。此時,再次變更自硫酸供給部132供給之硫酸及自過氧化氫供給部134供給之過氧化氫水之量之比率。As shown in FIG. 8(c) , the state of the processing liquid in the processing tank 110 is restored. Here, the hydrogen peroxide concentration is reduced while maintaining the sulfuric acid concentration in the treatment liquid in the treatment tank 110 . In this case, the control unit 182 controls the hydrogen peroxide supply unit 134 to reduce the supply amount of hydrogen peroxide water until the hydrogen peroxide concentration in the treatment liquid in the treatment tank 110 decreases. In addition, the control unit 182 controls the sulfuric acid supply unit 132 to supply sulfuric acid to a level that maintains the sulfuric acid concentration in the treatment liquid in the treatment tank 110 . At this time, the ratio of the amounts of sulfuric acid supplied from the sulfuric acid supply part 132 and the hydrogen peroxide water supplied from the hydrogen peroxide supply part 134 is changed again.

一例中,於處理槽110內維持之處理液為硫酸濃度82%,過氧化氫濃度1.0%,溫度110℃。In one example, the treatment liquid maintained in the treatment tank 110 has a sulfuric acid concentration of 82%, a hydrogen peroxide concentration of 1.0%, and a temperature of 110°C.

其後,控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。Thereafter, the control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 , and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110 . In addition, the heater 144 heats the treatment liquid with a constant amount of electric power.

接著,參考圖1~圖9,說明本實施形態之基板處理方法中之濃度調整步驟。圖9係顯示本實施形態之基板處理方法中,濃度調整步驟時之處理槽110內之硫酸濃度及過氧化氫濃度之時間變化之圖表。圖9中,線Lsc表示硫酸濃度之時間變化。線Lhc表示過氧化氫濃度之時間變化。Next, the density adjustment step in the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 9 . FIG. 9 is a graph showing temporal changes in the sulfuric acid concentration and the hydrogen peroxide concentration in the processing tank 110 during the concentration adjustment step in the substrate processing method of this embodiment. In Fig. 9, line Lsc represents the time change of the sulfuric acid concentration. Line Lhc represents the temporal change in hydrogen peroxide concentration.

如線Lsc所示,於濃度調整期間Pc之前,硫酸濃度維持目標濃度Tsb。但,嚴格而言,硫酸濃度隨著時間之經過而相對於目標濃度Tsb變動。這是因為硫酸供給部132基於濃度感測器162之測定結果,間歇性對處理槽110供給硫酸。此處,當硫酸濃度減低而達到目標濃度Tsb時,硫酸供給部132對處理槽110供給特定量之硫酸。因此,硫酸濃度自目標濃度Tsb暫時增加。As shown by the line Lsc, before the concentration adjustment period Pc, the sulfuric acid concentration maintains the target concentration Tsb. However, strictly speaking, the sulfuric acid concentration changes with the passage of time relative to the target concentration Tsb. This is because the sulfuric acid supply unit 132 intermittently supplies sulfuric acid to the treatment tank 110 based on the measurement result of the concentration sensor 162 . Here, when the sulfuric acid concentration decreases and reaches the target concentration Tsb, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 . Therefore, the sulfuric acid concentration temporarily increases from the target concentration Tsb.

於濃度調整期間Pc,對處理槽110供給於液體更換期間Pp成為新的處理液之硫酸及過氧化氫水。典型而言,濃度調整期間Pc係將基板W浸漬於處理槽110之處理液之前一刻之期間。During the concentration adjustment period Pc, the sulfuric acid and hydrogen peroxide water that became the new processing liquid during the liquid replacement period Pp are supplied to the treatment tank 110 . Typically, the concentration adjustment period Pc is a period immediately before the substrate W is immersed in the processing liquid of the processing tank 110 .

此處,與濃度調整期間Pc之前相比,硫酸濃度於濃度調整期間Pc之後亦維持目標濃度Tsb。該情形時,嚴格而言,硫酸濃度亦隨著時間之經過而相對於目標濃度Tsb變動。Here, compared with before the concentration adjustment period Pc, the sulfuric acid concentration also maintains the target concentration Tsb after the concentration adjustment period Pc. In this case, strictly speaking, the sulfuric acid concentration also changes with the passage of time relative to the target concentration Tsb.

另一方面,如線Lhc所示,於濃度調整期間Pc之前,過氧化氫濃度維持目標濃度Tob1。但,嚴格而言,過氧化氫濃度隨著時間之經過而相對於目標濃度Tob1變動。這是因為過氧化氫供給部134間歇性對處理槽110供給過氧化氫水。此處,當過氧化氫濃度減低而達到目標濃度Tob1時,過氧化氫供給部134亦對處理槽110供給特定量之過氧化氫水。因此,過氧化氫濃度自目標濃度Tob1暫時增加。On the other hand, as shown by the line Lhc, before the concentration adjustment period Pc, the hydrogen peroxide concentration maintains the target concentration Tob1. However, strictly speaking, the hydrogen peroxide concentration changes with the passage of time relative to the target concentration Tob1. This is because the hydrogen peroxide supply unit 134 intermittently supplies hydrogen peroxide water to the treatment tank 110 . Here, when the hydrogen peroxide concentration decreases and reaches the target concentration Tob1, the hydrogen peroxide supply part 134 also supplies a specific amount of hydrogen peroxide water to the treatment tank 110. Therefore, the hydrogen peroxide concentration temporarily increases from the target concentration Tob1.

與濃度調整期間Pc之前相比,過氧化氫濃度於濃度調整期間Pc之後增加。這是因為藉由濃度調整,過氧化氫水之目標濃度已自目標濃度Tob1變更為目標濃度Tob2。但,嚴格而言,過氧化氫濃度隨著時間之經過而相對於目標濃度Tob2變動。如上所述,這是因為過氧化氫供給部134間歇性對處理槽110供給過氧化氫水。The hydrogen peroxide concentration increases after the concentration adjustment period Pc compared with before the concentration adjustment period Pc. This is because the target concentration of the hydrogen peroxide water has been changed from the target concentration Tob1 to the target concentration Tob2 through concentration adjustment. However, strictly speaking, the hydrogen peroxide concentration changes with the passage of time relative to the target concentration Tob2. As described above, this is because the hydrogen peroxide supply unit 134 intermittently supplies hydrogen peroxide water to the treatment tank 110 .

其後,若經過特定期間,未預定將基板W浸漬於處理槽110之處理液,則過氧化氫濃度之目標濃度自目標濃度Tob2恢復為目標濃度Tob1。Thereafter, if the substrate W is not scheduled to be immersed in the treatment liquid of the treatment tank 110 for a specific period of time, the target concentration of hydrogen peroxide concentration is restored from the target concentration Tob2 to the target concentration Tob1.

接著,參考圖1~圖10,說明本發明之基板處理裝置100之實施形態。圖10(a)係顯示本實施形態之基板處理方法中處理槽110內之硫酸濃度之時間變化之圖表,圖10(b)係顯示本實施形態之基板處理方法中處理槽110內之過氧化氫濃度之時間變化之圖表。Next, an embodiment of the substrate processing apparatus 100 of the present invention will be described with reference to FIGS. 1 to 10 . FIG. 10(a) is a graph showing the temporal change of the sulfuric acid concentration in the processing tank 110 in the substrate processing method of this embodiment. FIG. 10(b) is a graph showing the peroxidation rate in the processing tank 110 in the substrate processing method of this embodiment. Graph of hydrogen concentration over time.

如圖10(a)所示,硫酸濃度相對於目標濃度Ts變動。這是因為硫酸供給部132基於濃度感測器162之測定結果,間歇性對處理槽110供給硫酸。As shown in FIG. 10(a) , the sulfuric acid concentration fluctuates relative to the target concentration Ts. This is because the sulfuric acid supply unit 132 intermittently supplies sulfuric acid to the treatment tank 110 based on the measurement result of the concentration sensor 162 .

詳細而言,當硫酸供給部132停止供給硫酸特定期間後,硫酸濃度隨著時間之經過逐漸降低。當濃度感測器162測定出硫酸濃度達到下限Tsd時,控制部182以硫酸供給部132對處理槽110供給特定量之硫酸之方式控制硫酸供給部132。另,由硫酸供給部132供給之硫酸之量以由濃度感測器162測定出之硫酸濃度不超過上限Tsu之方式設定。因此,硫酸濃度隨著時間經過相對於目標濃度Ts變動。Specifically, after the sulfuric acid supply unit 132 stops supplying sulfuric acid for a specific period, the sulfuric acid concentration gradually decreases with the passage of time. When the concentration sensor 162 detects that the sulfuric acid concentration reaches the lower limit Tsd, the control unit 182 controls the sulfuric acid supply unit 132 so that the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 . In addition, the amount of sulfuric acid supplied from the sulfuric acid supply part 132 is set so that the sulfuric acid concentration measured by the concentration sensor 162 does not exceed the upper limit Tsu. Therefore, the sulfuric acid concentration changes with the passage of time relative to the target concentration Ts.

如圖10(b)所示,過氧化氫濃度相對於目標濃度Th變動。這是因為過氧化氫供給部134基於濃度感測器162之測定結果,間歇性對處理槽110供給過氧化氫水。As shown in FIG. 10(b) , the hydrogen peroxide concentration fluctuates relative to the target concentration Th. This is because the hydrogen peroxide supply unit 134 intermittently supplies hydrogen peroxide water to the treatment tank 110 based on the measurement result of the concentration sensor 162 .

詳細而言,當過氧化氫供給部134停止供給過氧化氫水特定期間後,過氧化氫濃度隨著時間之經過逐漸降低。當濃度感測器162測定出過氧化氫濃度達到下限Thd時,控制部182以過氧化氫供給部134對處理槽110供給特定量之過氧化氫水之方式控制過氧化氫供給部134。另,由過氧化氫供給部134供給之過氧化氫水之量以由濃度感測器162測定出之過氧化氫濃度不超過上限Thu之方式設定。因此,過氧化氫濃度隨著時間之經過而相對於目標濃度Th變動。Specifically, after the hydrogen peroxide supply unit 134 stops supplying the hydrogen peroxide water for a specific period, the hydrogen peroxide concentration gradually decreases as time passes. When the concentration sensor 162 detects that the hydrogen peroxide concentration reaches the lower limit Thd, the control unit 182 controls the hydrogen peroxide supply unit 134 so that the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110 . In addition, the amount of hydrogen peroxide water supplied from the hydrogen peroxide supply unit 134 is set so that the hydrogen peroxide concentration measured by the concentration sensor 162 does not exceed the upper limit Thu. Therefore, the hydrogen peroxide concentration changes with the passage of time relative to the target concentration Th.

另,如圖10(a)及圖10(b)所示,硫酸濃度及過氧化氫濃度亦可對目標濃度進行反饋控制。又,反饋控制適宜於濃度調整步驟中進行。但,反饋控制亦可於液體更換步驟中進行。In addition, as shown in Figure 10(a) and Figure 10(b) , the sulfuric acid concentration and the hydrogen peroxide concentration can also be feedback-controlled on the target concentration. In addition, feedback control is preferably performed in the concentration adjustment step. However, feedback control can also be performed during the liquid replacement step.

接著,參考圖1~圖11,說明本實施形態之基板處理方法中之濃度調整步驟。圖11係本實施形態之基板處理方法中選擇濃度調整步驟時之流程圖。Next, the concentration adjustment step in the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 11 . FIG. 11 is a flowchart when selecting a density adjustment step in the substrate processing method of this embodiment.

如圖11所示,於步驟S202中,維持處理槽110內之處理液之狀態。控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度及過氧化氫濃度。控制部182基於濃度感測器162之結果,以處理液之硫酸濃度及過氧化氫濃度分別成為特定值之方式,控制硫酸供給部132及過氧化氫供給部134。又,控制部182基於由加熱器144測定出之溫度,以處理液維持特定溫度之方式控制加熱器144。As shown in FIG. 11 , in step S202 , the state of the processing liquid in the processing tank 110 is maintained. The control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110 and the sulfuric acid concentration and hydrogen peroxide concentration of the treatment liquid. Based on the result of the concentration sensor 162, the control unit 182 controls the sulfuric acid supply unit 132 and the hydrogen peroxide supply unit 134 so that the sulfuric acid concentration and the hydrogen peroxide concentration of the treatment liquid reach specific values respectively. Furthermore, the control unit 182 controls the heater 144 so that the processing liquid maintains a specific temperature based on the temperature measured by the heater 144 .

步驟S204中,判定基板處理裝置100處理之基板W是否為要進行濃度調整之對象基板。典型而言,於基板到達基板處理裝置100之前,控制部182判定基板W是否為對象基板。In step S204, it is determined whether the substrate W processed by the substrate processing apparatus 100 is a target substrate for density adjustment. Typically, before the substrate reaches the substrate processing apparatus 100, the control unit 182 determines whether the substrate W is the target substrate.

例如,於基板W為具有已進行離子注入之抗蝕劑之基板之情形時,控制部182判定為基板W是要進行濃度調整之對象基板。或,於基板W為進行元件分離後之氧化處理之基板之情形時,控制部182判定為基板W是要進行濃度調整之對象基板。For example, when the substrate W is a substrate having a resist that has been ion-implanted, the control unit 182 determines that the substrate W is a target substrate for concentration adjustment. Or, when the substrate W is a substrate subjected to oxidation treatment after element separation, the control unit 182 determines that the substrate W is a target substrate for concentration adjustment.

於基板W並非對象基板之情形時(於步驟S204中否),處理返回至步驟S202。另一方面,於基板W為對象基板之情形時(於步驟S204中是),處理進行至步驟S206。When the substrate W is not the target substrate (NO in step S204), the process returns to step S202. On the other hand, when the substrate W is the target substrate (YES in step S204), the process proceeds to step S206.

步驟S206中,增加處理槽110內之處理液中之過氧化氫濃度。典型而言,控制部182以增加過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度增加為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。In step S206, the hydrogen peroxide concentration in the treatment liquid in the treatment tank 110 is increased. Typically, the control unit 182 controls the hydrogen peroxide supply unit 134 to increase the supply amount of hydrogen peroxide water until the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 increases. In addition, the control unit 182 controls the sulfuric acid supply unit 132 to supply sulfuric acid to a level that maintains the sulfuric acid concentration in the treatment liquid in the treatment tank 110 .

步驟S208中,判定處理液之濃度調整是否結束。當過氧化氫濃度增加且濃度感測器162顯示特定值時,結束處理液之濃度調整。In step S208, it is determined whether the concentration adjustment of the processing liquid is completed. When the hydrogen peroxide concentration increases and the concentration sensor 162 displays a specific value, the concentration adjustment of the treatment liquid is completed.

於處理液之調整未結束之情形時(於步驟S208中否),處理返回至步驟S208。另一方面,於處理液之調整結束之情形時(於步驟S208中是),處理進行至步驟S210。When the adjustment of the processing liquid has not been completed (NO in step S208), the process returns to step S208. On the other hand, when the adjustment of the processing liquid is completed (YES in step S208), the process proceeds to step S210.

步驟S210中,維持處理槽110內之處理液之狀態。控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。In step S210, the state of the processing liquid in the processing tank 110 is maintained. The control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 , and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110 . In addition, the heater 144 heats the treatment liquid with a constant amount of electric power.

步驟S212中,將基板W浸漬於處理槽110之處理液中。典型而言,將基板W搬入至基板處理裝置100,浸漬於處理槽110之處理液。其後,自基板處理裝置100搬入基板W。其後,處理進行至步驟S214。In step S212, the substrate W is immersed in the processing liquid of the processing tank 110. Typically, the substrate W is loaded into the substrate processing apparatus 100 and immersed in the processing liquid of the processing tank 110 . Thereafter, the substrate W is loaded from the substrate processing apparatus 100 . Thereafter, the process proceeds to step S214.

步驟S214中,判定是否存在基板處理裝置100接下來應處理之基板W,且,該基板W是否為對象基板。典型而言,於下一塊基板到達基板處理裝置100之前,控制部182判定有無下一塊基板W及下一塊基板W是否為對象基板。In step S214, it is determined whether there is a substrate W that the substrate processing apparatus 100 should process next, and whether the substrate W is a target substrate. Typically, before the next substrate reaches the substrate processing apparatus 100, the control unit 182 determines whether there is the next substrate W and whether the next substrate W is the target substrate.

於無下一塊基板W、或下一塊基板W並非對象基板之情形時(於步驟S214中否),處理進行至步驟S216。另一方面,於有下一塊基板W,且該基板W為對象基板之情形時(於步驟S214中是),處理返回至步驟S210。When there is no next substrate W or the next substrate W is not the target substrate (NO in step S214), the process proceeds to step S216. On the other hand, when there is the next substrate W and the substrate W is the target substrate (Yes in step S214), the process returns to step S210.

步驟S216中,降低處理槽110內之處理液之過氧化氫濃度。典型而言,控制部182以減少過氧化氫水之供給量,直至處理槽110內之處理液中之過氧化氫濃度降低為止之方式,控制過氧化氫供給部134。又,控制部182以依維持處理槽110內之處理液中之硫酸濃度之程度供給硫酸之方式,控制硫酸供給部132。In step S216, the hydrogen peroxide concentration of the treatment liquid in the treatment tank 110 is reduced. Typically, the control unit 182 controls the hydrogen peroxide supply unit 134 to reduce the supply amount of hydrogen peroxide water until the concentration of hydrogen peroxide in the treatment liquid in the treatment tank 110 decreases. In addition, the control unit 182 controls the sulfuric acid supply unit 132 to supply sulfuric acid to a level that maintains the sulfuric acid concentration in the treatment liquid in the treatment tank 110 .

步驟S218中,判定處理液之濃度調整是否結束。當過氧化氫濃度降低且濃度感測器162顯示特定值時,結束處理液之濃度調整。In step S218, it is determined whether the concentration adjustment of the processing liquid is completed. When the hydrogen peroxide concentration decreases and the concentration sensor 162 displays a specific value, the concentration adjustment of the treatment liquid is completed.

於處理液之調整未結束之情形時(於步驟S218中否),處理返回至步驟S216。另一方面,於處理液之調整結束之情形時(於步驟S218中是),處理進行至步驟S220。When the adjustment of the processing liquid has not been completed (NO in step S218), the process returns to step S216. On the other hand, when the adjustment of the processing liquid is completed (YES in step S218), the process proceeds to step S220.

於步驟S220中,維持處理槽110內之處理液之狀態。控制部182維持處理槽110內之處理液之溫度、處理液之硫酸濃度、及處理液內之過氧化氫濃度。詳細而言,硫酸供給部132對處理槽110供給特定量之硫酸,過氧化氫供給部134對處理槽110供給特定量之過氧化氫水。又,加熱器144以恆定量之電力將處理液加熱。In step S220, the state of the processing liquid in the processing tank 110 is maintained. The control unit 182 maintains the temperature of the treatment liquid in the treatment tank 110, the sulfuric acid concentration of the treatment liquid, and the hydrogen peroxide concentration in the treatment liquid. Specifically, the sulfuric acid supply unit 132 supplies a specific amount of sulfuric acid to the treatment tank 110 , and the hydrogen peroxide supply unit 134 supplies a specific amount of hydrogen peroxide water to the treatment tank 110 . In addition, the heater 144 heats the treatment liquid with a constant amount of electric power.

根據本實施形態,如上所述,調整處理槽110之處理液之濃度。根據本實施形態,於將基板W浸漬於處理槽110之前一刻,將處理槽110之處理液調整為適於處理基板W之濃度。因此,於非濃度調整之對象之基板之情形時,亦可不調整處理槽110之處理液之濃度,可避免過氧化氫水之過量使用。According to this embodiment, as described above, the concentration of the treatment liquid in the treatment tank 110 is adjusted. According to this embodiment, just before the substrate W is immersed in the processing tank 110, the processing liquid in the processing tank 110 is adjusted to a concentration suitable for processing the substrate W. Therefore, when the substrate is not the target of concentration adjustment, the concentration of the treatment liquid in the treatment tank 110 does not need to be adjusted, thereby avoiding excessive use of hydrogen peroxide water.

又,於圖9及圖11中,作為濃度調整之一例,於基板W為對象基板之情形時,增加過氧化氫濃度,但本實施形態不限定於此。於基板W為對象基板之情形時,亦可增加硫酸濃度。Furthermore, in FIGS. 9 and 11 , as an example of concentration adjustment, when the substrate W is the target substrate, the hydrogen peroxide concentration is increased, but the present embodiment is not limited to this. When the substrate W is the target substrate, the sulfuric acid concentration may be increased.

又,於圖4所示之流程圖中,處理液調整步驟基於在基板處理裝置100處理基板之前進行之表示基板相關之資訊之基板資訊而選擇,但本實施形態不限定於此。處理液調整步驟亦可基於基板資訊與另外之資訊而選擇。In addition, in the flowchart shown in FIG. 4 , the processing liquid adjustment step is selected based on the substrate information indicating information related to the substrate performed before the substrate processing apparatus 100 processes the substrate, but the present embodiment is not limited to this. Processing fluid adjustment steps can also be selected based on substrate information and other information.

接著,參考圖1~圖12,說明本實施形態之基板處理方法。圖12係本實施形態之基板處理方法之流程圖。Next, the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 12 . FIG. 12 is a flow chart of the substrate processing method of this embodiment.

如圖12所示,步驟S10中,取得基板處理裝置100處理之基板W相關之基板資訊。例如,基板資訊取得部182a自記憶部184取得基板資訊。As shown in FIG. 12 , in step S10 , substrate information related to the substrate W processed by the substrate processing apparatus 100 is obtained. For example, the substrate information acquisition unit 182a acquires the substrate information from the storage unit 184.

於步驟S10A中,取得表示處理槽110之處理液之狀態之處理液資訊。處理液資訊可表示處理槽110之處理液中之硫酸濃度、過氧化氫濃度及溫度之任一者。例如,濃度感測器162測定處理槽110內之處理液中之硫酸濃度及過氧化氫濃度。又,加熱器144測定處理液之溫度。處理液資訊取得部182c自濃度感測器162及/或加熱器144取得處理液資訊。In step S10A, processing liquid information indicating the state of the processing liquid in the processing tank 110 is obtained. The treatment liquid information may indicate any one of the sulfuric acid concentration, the hydrogen peroxide concentration, and the temperature in the treatment liquid of the treatment tank 110 . For example, the concentration sensor 162 measures the sulfuric acid concentration and hydrogen peroxide concentration in the treatment liquid in the treatment tank 110 . Furthermore, the heater 144 measures the temperature of the processing liquid. The processing liquid information acquisition unit 182 c obtains the processing liquid information from the concentration sensor 162 and/or the heater 144 .

步驟S20中,選擇處理液調整步驟。控制部182基於基板資訊及處理液資訊,選擇以液體更換步驟或濃度調整步驟之哪一者調整處理槽110之處理液。典型而言,控制部182於基板W到達基板處理裝置100之前,基於基板資訊及處理液資訊,選擇處理液調整步驟。In step S20, a processing liquid adjustment step is selected. The control unit 182 selects which one of the liquid replacement step or the concentration adjustment step to adjust the processing liquid in the processing tank 110 based on the substrate information and the processing liquid information. Typically, the control unit 182 selects a processing liquid adjustment step based on the substrate information and the processing liquid information before the substrate W reaches the substrate processing apparatus 100 .

例如,基於基板資訊,設定處理槽110之處理液之目標值。一例中,根據於搬入至基板處理裝置100之前對基板W進行之處理,設定處理槽110之處理液中之目標硫酸濃度、目標過氧化氫濃度及目標溫度。For example, based on the substrate information, the target value of the processing liquid in the processing tank 110 is set. In one example, the target sulfuric acid concentration, the target hydrogen peroxide concentration, and the target temperature in the processing liquid of the processing tank 110 are set based on the processing performed on the substrate W before being loaded into the substrate processing apparatus 100 .

處理液調整步驟選擇部182b選擇處理液調整步驟。例如,處理液調整步驟選擇部182b自基於基板資訊設定之目標硫酸濃度、目標過氧化氫濃度及目標溫度、與處理液資訊所示之處理槽110中之處理液之硫酸濃度、目標過氧化氫濃度及目標溫度之差量,選擇處理液調整步驟。例如,於差量相對較大之情形時,處理液調整步驟選擇部182b選擇液體更換步驟,作為處理液調整步驟。另一方面,於差量相對較小之情形時,處理液調整步驟選擇部182b選擇濃度調整步驟,作為處理液調整步驟。The processing liquid adjustment step selection unit 182b selects a processing liquid adjustment step. For example, the processing liquid adjustment step selection unit 182b selects the target sulfuric acid concentration, target hydrogen peroxide concentration, and target temperature set based on the substrate information, and the sulfuric acid concentration, target hydrogen peroxide concentration of the processing liquid in the processing tank 110 shown in the processing liquid information. The difference between concentration and target temperature is used to select the treatment liquid adjustment procedure. For example, when the difference is relatively large, the processing liquid adjustment step selection unit 182b selects a liquid replacement step as the processing liquid adjustment step. On the other hand, when the difference is relatively small, the processing liquid adjustment step selection unit 182b selects the concentration adjustment step as the processing liquid adjustment step.

步驟S20中選擇液體更換步驟之情形時,處理進行至步驟S30。另一方面,步驟S20中選擇濃度調整步驟之情形時,處理進行至步驟S40。When the liquid replacement step is selected in step S20, the process proceeds to step S30. On the other hand, when the density adjustment step is selected in step S20, the process proceeds to step S40.

步驟S30中,進行液體更換步驟。藉由液體更換步驟,調整處理槽110之處理液。如上所述,判定處理槽110之處理液是否滿足基準。於處理液滿足基準之情形時,不排出處理槽110之處理液。於處理液不滿足基準之情形時,排出處理槽110之處理液並重新對處理槽110供給硫酸及過氧化氫水。其後,處理進行至步驟S50A。In step S30, a liquid replacement step is performed. Through the liquid replacement step, the processing liquid in the processing tank 110 is adjusted. As described above, it is determined whether the processing liquid in the processing tank 110 satisfies the standard. When the treatment liquid meets the standard, the treatment liquid in the treatment tank 110 is not discharged. When the treatment liquid does not meet the standard, the treatment liquid in the treatment tank 110 is discharged and sulfuric acid and hydrogen peroxide water are supplied to the treatment tank 110 again. Thereafter, the process proceeds to step S50A.

步驟S50A中,將基板W浸漬於處理槽110之處理液。其後,自處理槽110之處理液取出基板W。如上結束基板處理。In step S50A, the substrate W is immersed in the processing liquid of the processing tank 110 . Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110 . The substrate processing is completed as above.

步驟S40中,進行濃度調整步驟。該情形時,調整處理槽110之處理液之濃度。接著,處理進行至步驟S50B。In step S40, a density adjustment step is performed. In this case, the concentration of the treatment liquid in the treatment tank 110 is adjusted. Next, the process proceeds to step S50B.

步驟S50B中,將基板浸漬於處理槽110之處理液中。其後,自處理槽110之處理液取出基板W。如上結束基板處理。In step S50B, the substrate is immersed in the processing liquid of the processing tank 110 . Thereafter, the substrate W is taken out from the processing liquid in the processing tank 110 . The substrate processing is completed as above.

根據本實施形態,不僅考慮基板資訊還考慮處理液資訊,選擇處理液調整步驟。因此,亦可考慮調整處理液所需之時間而適當地處理基板W。According to this embodiment, not only the substrate information but also the processing liquid information is considered to select the processing liquid adjustment step. Therefore, the time required for adjusting the processing liquid can also be considered to appropriately process the substrate W.

又,於參考圖1~圖12上述之說明中,出於避免發明過於複雜之目的,於1個基板處理裝置100中處理基板W,但本實施形態不限定於此。基板W亦可於2個以上之基板處理裝置100中處理。In addition, in the above description with reference to FIGS. 1 to 12 , in order to avoid overly complicating the invention, the substrate W is processed in one substrate processing apparatus 100 , but the present embodiment is not limited to this. The substrate W can also be processed in two or more substrate processing apparatuses 100 .

接著,參考圖13,說明具備本實施形態之基板處理裝置100之基板處理系統10。圖13係具備本實施形態之基板處理裝置100之基板處理系統10之模式圖。圖13所示之基板處理系統10具備第1基板處理裝置100A~第3基板處理裝置100C。Next, the substrate processing system 10 including the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 13 . FIG. 13 is a schematic diagram of the substrate processing system 10 including the substrate processing apparatus 100 of this embodiment. The substrate processing system 10 shown in FIG. 13 includes a first substrate processing device 100A to a third substrate processing device 100C.

如圖13所示,基板處理系統10具備投入部20、複數個收納部30、交接機構40、移出部50、緩衝單元BU、第1搬送裝置CTC、第2搬送裝置WTR、複數個基板處理裝置100、及控制裝置180。As shown in FIG. 13 , the substrate processing system 10 includes an input unit 20 , a plurality of storage units 30 , a transfer mechanism 40 , a removal unit 50 , a buffer unit BU, a first transport device CTC, a second transport device WTR, and a plurality of substrate processing devices. 100, and control device 180.

複數個基板處理裝置100具備第1基板處理裝置100A、第2基板處理裝置100B、及第3基板處理裝置100C。第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C排列配置於一方向上。例如,第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C與第1搬送裝置CTC之搬送路徑相鄰,自第1搬送裝置CTC之搬送路徑附近,依序配置第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C。The plurality of substrate processing apparatuses 100 include a first substrate processing apparatus 100A, a second substrate processing apparatus 100B, and a third substrate processing apparatus 100C. The first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are arranged side by side in one direction. For example, the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C are adjacent to the transport path of the first transport device CTC, and are sequentially arranged from the vicinity of the transport path of the first transport device CTC. Substrate processing apparatus 100A, second substrate processing apparatus 100B, and third substrate processing apparatus 100C.

此處,第1基板處理裝置100A~第3基板處理裝置100C貯存包含硫酸及過氧化氫水之處理液。亦可對第1基板處理裝置100A~第3基板處理裝置100C各者,投入進行過不同處理之基板W。Here, the first substrate processing apparatus 100A to the third substrate processing apparatus 100C store a processing liquid containing sulfuric acid and hydrogen peroxide water. The substrate W that has been processed differently may be input to each of the first substrate processing apparatus 100A to the third substrate processing apparatus 100C.

由基板處理裝置100處理之基板W自投入部20搬入。投入部20包含複數個載置台22。由基板處理裝置100處理後之基板W自移出部50搬出。移出部50包含複數個載置台52。The substrate W processed by the substrate processing apparatus 100 is loaded from the loading unit 20 . The input part 20 includes a plurality of placement tables 22 . The substrate W processed by the substrate processing apparatus 100 is carried out from the removal part 50 . The removal part 50 includes a plurality of mounting tables 52 .

投入部20中載置收納有基板W之收納部30。載置於投入部20之收納部30收納未進行基板處理裝置100之處理之基板W。此處,2個收納部30分別載置於2個載置台22。The storage portion 30 in which the substrate W is stored is placed in the input portion 20 . The storage portion 30 placed on the input portion 20 stores the substrate W that has not been processed by the substrate processing apparatus 100 . Here, the two storage units 30 are placed on the two mounting tables 22 respectively.

複數個收納部30各者收納複數個基板W。各基板W以水平姿勢收納於收納部30。收納部30例如為FOUP(Front Opening Unified Pod:前開式晶片傳送盒)。Each of the plurality of storage portions 30 stores a plurality of substrates W. Each substrate W is stored in the storage portion 30 in a horizontal posture. The storage unit 30 is, for example, a FOUP (Front Opening Unified Pod).

載置於移出部50之收納部30收納由基板處理裝置100處理後之基板W。移出部50包含複數個載置台52。2個收納部30分別載置於2個載置台52上。移出部50將已處理之基板W收納於收納部30,連同收納部30一起移出。The storage portion 30 placed on the removal portion 50 stores the substrate W processed by the substrate processing apparatus 100 . The removal part 50 includes a plurality of mounting tables 52. The two storage parts 30 are respectively placed on the two mounting tables 52. The removal part 50 stores the processed substrate W in the storage part 30 and moves it out together with the storage part 30 .

緩衝單元BU與投入部20及移出部50相鄰配置。緩衝單元BU將載置於投入部20之收納部30連同基板W一起提入內部,且將收納部30載置於架子(未圖示)。又,緩衝單元BU接收已處理之基板W將其收納於收納部30,且將收納部30載置於架子。於緩衝單元BU內,配置有交接機構40。The buffer unit BU is arranged adjacent to the input unit 20 and the removal unit 50 . The buffer unit BU lifts the storage part 30 placed in the insertion part 20 into the inside together with the substrate W, and places the storage part 30 on a shelf (not shown). Furthermore, the buffer unit BU receives the processed substrate W, stores it in the storage part 30, and places the storage part 30 on the rack. The transfer mechanism 40 is arranged in the buffer unit BU.

交接機構40於投入部20及移出部50與架子之間交接收納部30。又,交接機構40對第1搬送裝置CTC進行僅基板W之交接。即,交接機構40對第1搬送裝置CTC進行一組基板W之交接。The transfer mechanism 40 transfers the receiving part 30 between the input part 20 and the removal part 50 and the shelf. Furthermore, the transfer mechanism 40 transfers only the substrate W to the first transport device CTC. That is, the transfer mechanism 40 transfers a set of substrates W to the first transfer device CTC.

第1搬送裝置CTC於自交接機構40接收到未處理之複數塊基板W組後,將複數塊基板W之姿勢自水平姿勢轉換為垂直姿勢,並將複數塊基板W移交給第2搬送裝置WTR。又,第1搬送裝置CTC於自第2搬送裝置WTR接收到已處理之複數塊基板W組後,將複數塊基板W之姿勢自垂直姿勢轉換為水平姿勢,並將基板W組移交給交接機構40。After receiving the unprocessed plurality of substrates W from the transfer mechanism 40 , the first conveying device CTC converts the postures of the plurality of substrates W from the horizontal posture to the vertical posture, and transfers the plurality of substrates W to the second conveying device WTR. . Furthermore, after receiving the processed plurality of substrate groups W from the second transportation apparatus WTR, the first transport device CTC converts the postures of the plurality of substrates W from the vertical posture to the horizontal posture, and transfers the substrate group W to the transfer mechanism. 40.

第2搬送裝置WTR可沿基板處理系統10之長度方向,自第3基板處理裝置100C移動至第2基板處理裝置100B。第2搬送裝置WTR可將基板W組搬入及搬出至第1基板處理裝置100A、第2基板處理裝置100B及第3基板處理裝置100C。The second transport device WTR can move from the third substrate processing device 100C to the second substrate processing device 100B along the length direction of the substrate processing system 10 . The second transport device WTR can transport the group of substrates W into and out of the first substrate processing apparatus 100A, the second substrate processing apparatus 100B, and the third substrate processing apparatus 100C.

控制裝置180控制基板處理系統10之各種動作。詳細而言,控制裝置180控制交接機構40、第1搬送裝置CTC、第2搬送裝置WTR、及基板處理裝置100。The control device 180 controls various operations of the substrate processing system 10 . Specifically, the control device 180 controls the transfer mechanism 40 , the first transfer device CTC, the second transfer device WTR, and the substrate processing device 100 .

控制裝置180包含控制部182及記憶部184。控制部182具有處理器。控制部182例如具有中央處理運算器。或,控制部182亦可具有泛用運算器。The control device 180 includes a control unit 182 and a memory unit 184 . The control unit 182 has a processor. The control unit 182 includes, for example, a central processing unit. Alternatively, the control unit 182 may have a general-purpose arithmetic unit.

記憶部184記憶資料及電腦程式。資料包含製程資料。製程資料包含顯示複數個製程之資訊。複數個製程各者規定基板W之處理內容及處理順序。The memory unit 184 stores data and computer programs. The data includes manufacturing process data. Process data contains information showing multiple processes. Each of the plurality of processes defines the processing content and processing sequence of the substrate W.

記憶部184包含主記憶裝置及輔助記憶裝置。主記憶裝置例如為半導體記憶體。輔助記憶裝置例如為半導體記憶體及/或硬碟。記憶部184亦可包含可移除媒體。記憶部184相當於非暫時性電腦可讀取記憶媒體之一例。The memory unit 184 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk. Memory 184 may also include removable media. The memory unit 184 is equivalent to an example of a non-transitory computer-readable storage medium.

記憶部184中記憶有已預設順序之電腦程式。基板處理裝置100依照電腦程式所規定之順序而動作。控制部182執行記憶部184所記憶之電腦程式,而執行基板處理動作。控制部182之處理器藉由執行記憶於記憶部184之電腦程式,而控制交接機構40、第1搬送裝置CTC、第2搬送裝置WTR、及基板處理裝置100。The memory unit 184 stores computer programs with preset sequences. The substrate processing apparatus 100 operates according to the sequence specified by the computer program. The control unit 182 executes the computer program stored in the memory unit 184 to perform substrate processing operations. The processor of the control unit 182 controls the transfer mechanism 40 , the first transfer device CTC, the second transfer device WTR, and the substrate processing device 100 by executing the computer program stored in the memory unit 184 .

以上,已一面參考圖式一面說明本發明之實施形態。但,本發明不限於上述實施形態,可於不脫離其主旨之範圍內以各種態樣實施。又,可藉由適當組合上述實施形態所揭示之複數個構成要件,而形成各種發明。例如,亦可自實施形態所示之所有構成要件中刪除若干構成要件。再者,亦可適當組合跨及不同實施形態之構成要件。為容易理解,圖式以各個構成要件為主體模式性顯示,圖示之各構成要件之厚度、長度、個數、間隔等係為便於製作圖式而作,有與實際不同之情形。又,上述實施形態所示之各構成要件之材質、形狀、尺寸等為一例,無特別限定,可於實質上不脫離本發明之效果之範圍內進行各種變更。 [產業上之可用性] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various forms without departing from the scope of the invention. In addition, various inventions can be formed by appropriately combining the plurality of constituent elements disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, the constituent elements spanning different implementation forms can also be appropriately combined. To facilitate understanding, the drawings are shown schematically with each constituent element as the main body. The thickness, length, number, spacing, etc. of each constituent element shown in the illustrations are made for the convenience of making the drawings, and may be different from the actual ones. In addition, the materials, shapes, dimensions, etc. of each component shown in the above embodiment are just examples and are not particularly limited, and various changes can be made within the scope that does not substantially deviate from the effects of the present invention. [Industrial availability]

本發明適宜用於基板處理裝置及基板處理方法。The present invention is suitably used in a substrate processing apparatus and a substrate processing method.

10:基板處理系統 20:投入部 22:載置台 30:收納部 40:交接機構 50:移出部 52:載置台 100:基板處理裝置 100A:第1基板處理裝置 100B:第2基板處理裝置 100C:第3基板處理裝置 110:處理槽 112:內槽 114:外槽 116:蓋 116a,116b:開門部 120:基板保持部 122:本體板 124:保持桿 126:升降單元 130:處理液供給部 132:硫酸供給部 132a:配管 132b:閥 134:過氧化氫供給部 134a:配管 134b:閥 140:循環部 141:配管 142:泵 143:過濾器 144:加熱器 145:調整閥 146,152,154,155:閥 148:循環液供給管 150:排液部 151:排液配管 153:排液配管 162:濃度感測器 180:控制裝置 182:控制部 182a:基板資訊取得部 182b:處理液調整步驟選擇部 182c:處理液資訊取得部 184:記憶部 BU:緩衝單元 CTC:第1搬送裝置 L:處理液 Lhc,Lhp,Lsc,Lsp:線 Pc:濃度調整期間 Pp:液體更換期間 S10,S10A,S20,S30,S40,S50A,S50B:步驟 S102,S104,S106,S108,S110,S112,S114,S116,S118,S120:步驟 S202,S204,S206,S208,S210,S212,S214,S216,S218,S220:步驟 Th,Ts,Tsb:目標濃度 Thd,Tsd:下限 Thu,Tsu:上限 Tob1,Tob2:目標濃度 W:基板 WTR:第2搬送裝置 10:Substrate processing system 20:Investment Department 22: Loading platform 30: Storage Department 40: Handover agency 50:Remove Department 52: Loading platform 100:Substrate processing device 100A: 1st substrate processing device 100B: Second substrate processing device 100C: 3rd substrate processing device 110: Processing tank 112:Inner tank 114:Outer tank 116: cover 116a,116b: door opening 120:Substrate holding part 122:Body board 124:Hold rod 126:Lifting unit 130: Treatment liquid supply department 132: Sulfuric acid supply department 132a:Piping 132b: valve 134: Hydrogen peroxide supply department 134a:Piping 134b: valve 140:Circulation Department 141:Piping 142:Pump 143:Filter 144:Heater 145:Adjusting valve 146,152,154,155: valve 148:Circulating fluid supply pipe 150: Drainage part 151: Drainage piping 153:Drainage piping 162:Concentration sensor 180:Control device 182:Control Department 182a:Substrate information acquisition department 182b: Treatment liquid adjustment step selection part 182c: Processing fluid information acquisition department 184:Memory department BU: buffer unit CTC: 1st conveyor L: treatment liquid Lhc,Lhp,Lsc,Lsp: line Pc: Concentration adjustment period Pp: during liquid replacement S10, S10A, S20, S30, S40, S50A, S50B: Steps S102, S104, S106, S108, S110, S112, S114, S116, S118, S120: Steps S202, S204, S206, S208, S210, S212, S214, S216, S218, S220: Steps Th, Ts, Tsb: target concentration Thd, Tsd: lower limit Thu, Tsu: upper limit Tob1, Tob2: target concentration W: substrate WTR: 2nd conveyor

圖1(a)及(b)係本實施形態之基板處理裝置之模式性立體圖。 圖2係本實施形態之基板處理裝置之模式圖。 圖3係本實施形態之基板處理裝置之模式性方塊圖。 圖4係本實施形態之基板處理方法之流程圖。 圖5(a)~(c)係用以說明本實施形態之基板處理方法中之液體更換步驟之模式圖。 圖6係顯示本實施形態之基板處理方法中,液體更換步驟時之處理槽內之硫酸濃度及過氧化氫濃度之時間變化之圖表。 圖7係本實施形態之基板處理方法中選擇液體更換步驟時之流程圖。 圖8(a)~(c)係顯示本實施形態之基板處理方法中之濃度調整步驟之模式圖。 圖9係顯示本實施形態之基板處理方法中,濃度調整時之處理槽內之硫酸濃度及過氧化氫濃度之時間變化之圖表。 圖10(a)及(b)係顯示本實施形態之基板處理方法中處理槽內之硫酸濃度及過氧化氫濃度之時間變化之圖表。 圖11係本實施形態之基板處理方法中選擇濃度調整步驟時之流程圖。 圖12係本實施形態之基板處理方法之流程圖。 圖13係具備本實施形態之基板處理裝置之基板處理系統之模式圖。 1(a) and (b) are schematic perspective views of the substrate processing apparatus of this embodiment. FIG. 2 is a schematic diagram of the substrate processing apparatus of this embodiment. FIG. 3 is a schematic block diagram of the substrate processing apparatus of this embodiment. FIG. 4 is a flow chart of the substrate processing method of this embodiment. 5 (a) to (c) are schematic diagrams for explaining the liquid replacement step in the substrate processing method of this embodiment. FIG. 6 is a graph showing the time changes of the sulfuric acid concentration and the hydrogen peroxide concentration in the processing tank during the liquid replacement step in the substrate processing method of this embodiment. FIG. 7 is a flowchart when a liquid replacement step is selected in the substrate processing method of this embodiment. 8(a) to (c) are schematic diagrams showing the concentration adjustment steps in the substrate processing method of this embodiment. FIG. 9 is a graph showing temporal changes in the sulfuric acid concentration and the hydrogen peroxide concentration in the treatment tank during concentration adjustment in the substrate processing method of this embodiment. 10(a) and (b) are graphs showing temporal changes in the sulfuric acid concentration and the hydrogen peroxide concentration in the processing tank in the substrate processing method of this embodiment. FIG. 11 is a flowchart when selecting a density adjustment step in the substrate processing method of this embodiment. FIG. 12 is a flow chart of the substrate processing method of this embodiment. FIG. 13 is a schematic diagram of a substrate processing system including the substrate processing apparatus of this embodiment.

S10,S20,S30,S40,S50A,S50B:步驟 S10, S20, S30, S40, S50A, S50B: steps

Claims (7)

一種基板處理方法,其係於貯存有包含硫酸及過氧化氫水之處理液之處理槽中,將基板浸漬於上述處理液中而處理上述基板者,且包含以下步驟: 於將上述基板浸漬於上述處理槽之上述處理液之前,取得顯示上述基板相關之資訊之基板資訊; 基於上述基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為調整上述處理液之處理液調整步驟; 第1處理液調整步驟,其於上述選擇之步驟中選擇上述液體更換步驟之情形時,於上述處理槽之上述處理液不滿足特定條件時,自上述處理槽排出上述處理槽之上述處理液之至少一部分,對上述處理槽供給硫酸及過氧化氫水而調整上述處理槽之上述處理液; 第2處理液調整步驟,其於上述選擇之步驟中選擇上述濃度調整步驟之情形時,一面使上述處理槽之上述處理液經由連接於上述處理槽之配管循環,一面調整上述處理槽之上述處理液之濃度;及 使於上述第1處理液調整步驟或上述第2處理液調整步驟中調整後之上述處理槽之上述處理液,一面經由連接於上述處理槽之配管循環,一面將上述基板浸漬於上述處理槽之上述處理液。 A method for treating a substrate, which involves immersing the substrate in a treatment tank containing a treatment liquid containing sulfuric acid and hydrogen peroxide water to process the substrate, and includes the following steps: Before immersing the above-mentioned substrate in the above-mentioned treatment liquid in the above-mentioned treatment tank, obtain substrate information showing information related to the above-mentioned substrate; Based on the above substrate information, select any one of the liquid replacement step and the concentration adjustment step as the processing liquid adjustment step to adjust the above processing liquid; The first treatment liquid adjustment step is to discharge the treatment liquid in the treatment tank from the treatment tank when the treatment liquid in the treatment tank does not meet specific conditions when the liquid replacement step is selected in the above selection step. At least part of the method supplies sulfuric acid and hydrogen peroxide water to the treatment tank to adjust the treatment liquid in the treatment tank; In the second treatment liquid adjustment step, when the concentration adjustment step is selected among the above selection steps, the treatment in the treatment tank is adjusted while the treatment liquid in the treatment tank is circulated through the piping connected to the treatment tank. the concentration of the liquid; and The substrate is immersed in the processing tank while the processing liquid in the processing tank adjusted in the first processing liquid adjustment step or the second processing liquid adjustment step is circulated through a pipe connected to the processing tank. The above treatment liquid. 如請求項1之基板處理方法,其中 於取得上述基板資訊之步驟中,上述基板資訊顯示已對上述基板之抗蝕劑進行灰化處理之情形時,於上述選擇之步驟中選擇上述液體更換步驟; 於取得上述基板資訊之步驟中,上述基板資訊顯示已對上述基板之抗蝕劑進行離子注入、及已將上述基板進行元件分離之任一者之情形時,於上述選擇之步驟中選擇上述濃度調整步驟。 Such as the substrate processing method of claim 1, wherein In the step of obtaining the above-mentioned substrate information, when the above-mentioned substrate information shows that the resist of the above-mentioned substrate has been ashed, select the above-mentioned liquid replacement step in the above-mentioned selection step; In the step of obtaining the above-mentioned substrate information, if the above-mentioned substrate information shows that the resist of the above-mentioned substrate has been ion-implanted or the above-mentioned substrate has been subjected to element separation, the above-mentioned concentration is selected in the above-mentioned selection step. Adjustment steps. 如請求項1或2之基板處理方法,其中 於上述第1處理液調整步驟中,於上述處理槽之上述處理液滿足特定條件之情形時,不排出上述處理槽之上述處理液。 Such as the substrate processing method of claim 1 or 2, wherein In the first treatment liquid adjustment step, when the treatment liquid in the treatment tank satisfies a specific condition, the treatment liquid in the treatment tank is not discharged. 如請求項1或2之基板處理方法,其中 上述第1處理液調整步驟包含以下步驟:於浸漬上述基板之前,基於將基板浸漬於上述處理槽之處理液起經過之時間,設定自上述處理槽排出之上述處理液之量。 Such as the substrate processing method of claim 1 or 2, wherein The first processing liquid adjustment step includes the step of setting the amount of the processing liquid discharged from the processing tank based on the elapsed time since the substrate was immersed in the processing liquid in the processing tank before immersing the substrate. 如請求項1或2之基板處理方法,其中 上述第2處理液調整步驟包含以下步驟:基於測定上述處理槽之上述處理液之濃度之濃度感測器之測定結果,調整上述處理液之過氧化氫濃度。 Such as the substrate processing method of claim 1 or 2, wherein The above-mentioned second treatment liquid adjustment step includes the following step: adjusting the hydrogen peroxide concentration of the above-mentioned treatment liquid based on the measurement result of the concentration sensor that measures the concentration of the above-mentioned treatment liquid in the above-mentioned treatment tank. 如請求項1或2之基板處理方法,其中 上述第2處理液調整步驟包含以下步驟: 於將上述基板浸漬於上述處理槽之上述處理液之前,以增加上述處理槽之上述處理液之過氧化氫濃度之方式對上述處理槽供給過氧化氫水;及 於將上述基板浸漬於上述處理槽之上述處理液之後,降低上述處理槽之上述處理液之過氧化氫濃度。 Such as the substrate processing method of claim 1 or 2, wherein The above-mentioned second treatment liquid adjustment step includes the following steps: Before the substrate is immersed in the treatment liquid in the treatment tank, hydrogen peroxide water is supplied to the treatment tank in a manner to increase the hydrogen peroxide concentration of the treatment liquid in the treatment tank; and After the substrate is immersed in the treatment liquid in the treatment tank, the concentration of hydrogen peroxide in the treatment liquid in the treatment tank is reduced. 一種基板處理裝置,其具備: 處理槽,其貯存包含硫酸及過氧化氫水之處理液; 循環部,其具有供上述處理槽之上述處理液循環之配管; 排液部,其排出上述處理槽之上述處理液; 處理液供給部,其對上述處理槽供給硫酸及過氧化氫水; 基板保持部,其保持基板,並將上述基板浸漬於上述處理槽之上述處理液;及 控制部,其控制上述循環部、上述排液部、上述處理液供給部及上述基板保持部;且 上述控制部於將上述基板浸漬於上述處理槽之上述處理液之前,基於顯示上述基板相關之資訊之基板資訊,選擇液體更換步驟及濃度調整步驟之任一者,作為調整上述處理液之處理液調整步驟; 於選擇上述液體更換步驟之情形時,上述控制部以進行第1處理液調整步驟之方式,控制上述排液部及上述處理液供給部,且上述第1處理液調整步驟於上述處理槽之上述處理液不滿足特定條件時,自上述處理槽排出上述處理槽之上述處理液之至少一部分,使上述處理液供給部對上述處理槽供給上述硫酸及上述過氧化氫水而調整上述處理槽之上述處理液; 於選擇上述濃度調整步驟之情形時,上述控制部以進行第2處理液調整步驟之方式,控制上述循環部及上述處理液供給部,且上述第2處理液調整步驟一面使上述處理槽之上述處理液經由上述循環部之上述配管循環,一面調整上述處理液之濃度; 上述控制部以一面使於上述第1處理液調整步驟或上述第2處理液調整步驟中調整後之上述處理槽之上述處理液,經由上述循環部之上述配管循環,一面將上述基板浸漬於上述處理槽之上述處理液之方式,控制上述循環部及上述基板保持部。 A substrate processing device having: A treatment tank that stores a treatment solution containing sulfuric acid and hydrogen peroxide water; A circulation section having a pipe for circulating the treatment liquid in the treatment tank; A drain part that drains the above-mentioned treatment liquid in the above-mentioned treatment tank; A treatment liquid supply unit that supplies sulfuric acid and hydrogen peroxide water to the treatment tank; a substrate holding part that holds the substrate and immerses the substrate in the processing liquid in the processing tank; and a control unit that controls the circulation unit, the liquid drain unit, the processing liquid supply unit, and the substrate holding unit; and Before the substrate is immersed in the treatment liquid in the treatment tank, the control unit selects either a liquid replacement step or a concentration adjustment step as the treatment liquid for adjusting the treatment liquid based on the substrate information that displays information related to the substrate. Adjustment steps; When the above-mentioned liquid replacement step is selected, the above-mentioned control part controls the above-mentioned liquid discharge part and the above-mentioned processing liquid supply part in a manner to perform the first processing liquid adjustment step, and the above-mentioned first processing liquid adjustment step is performed on the above-mentioned part of the above-mentioned processing tank. When the treatment liquid does not meet the specific conditions, at least part of the treatment liquid in the treatment tank is discharged from the treatment tank, and the treatment liquid supply part supplies the sulfuric acid and the hydrogen peroxide water to the treatment tank to adjust the above-mentioned temperature of the treatment tank. treatment fluid; When the concentration adjustment step is selected, the control unit controls the circulation unit and the treatment liquid supply unit to perform a second treatment liquid adjustment step, and the second treatment liquid adjustment step causes the above-mentioned concentration of the treatment tank to The treatment liquid is circulated through the piping of the circulation unit while adjusting the concentration of the treatment liquid; The control unit immerses the substrate in the treatment tank while circulating the treatment liquid in the treatment tank adjusted in the first treatment liquid adjustment step or the second treatment liquid adjustment step through the pipe of the circulation unit. The processing liquid in the processing tank controls the circulation unit and the substrate holding unit.
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