TWI849313B - 光加熱裝置及加熱處理方法 - Google Patents

光加熱裝置及加熱處理方法 Download PDF

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Publication number
TWI849313B
TWI849313B TW110116695A TW110116695A TWI849313B TW I849313 B TWI849313 B TW I849313B TW 110116695 A TW110116695 A TW 110116695A TW 110116695 A TW110116695 A TW 110116695A TW I849313 B TWI849313 B TW I849313B
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TW
Taiwan
Prior art keywords
aforementioned
light
substrate
main surface
processing chamber
Prior art date
Application number
TW110116695A
Other languages
English (en)
Chinese (zh)
Other versions
TW202205386A (zh
Inventor
北川鉄也
溝尻貴文
中村祥章
横森岳彦
金津桂太
Original Assignee
日商牛尾電機股份有限公司
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Publication date
Application filed by 日商牛尾電機股份有限公司 filed Critical 日商牛尾電機股份有限公司
Publication of TW202205386A publication Critical patent/TW202205386A/zh
Application granted granted Critical
Publication of TWI849313B publication Critical patent/TWI849313B/zh

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H05B45/18—Controlling the intensity of the light using temperature feedback
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H05B47/155—Coordinated control of two or more light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H05B47/16—Controlling the light source by timing means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Resistance Heating (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Furnace Details (AREA)
TW110116695A 2020-07-10 2021-05-10 光加熱裝置及加熱處理方法 TWI849313B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-118998 2020-07-10
JP2020118998A JP7501177B2 (ja) 2020-07-10 2020-07-10 光加熱装置及び加熱処理方法

Publications (2)

Publication Number Publication Date
TW202205386A TW202205386A (zh) 2022-02-01
TWI849313B true TWI849313B (zh) 2024-07-21

Family

ID=79173377

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110116695A TWI849313B (zh) 2020-07-10 2021-05-10 光加熱裝置及加熱處理方法

Country Status (5)

Country Link
US (1) US12171051B2 (enExample)
JP (1) JP7501177B2 (enExample)
KR (1) KR102796647B1 (enExample)
CN (1) CN113921419A (enExample)
TW (1) TWI849313B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12125723B2 (en) * 2018-06-25 2024-10-22 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus
US12322613B2 (en) * 2019-08-07 2025-06-03 Samsung Electronics Co., Ltd. Pressure heating apparatus
JP7445571B2 (ja) * 2020-09-24 2024-03-07 東京エレクトロン株式会社 加熱装置及び加熱方法
JP7750154B2 (ja) * 2022-03-28 2025-10-07 ウシオ電機株式会社 光加熱装置、加熱処理方法
JP7750120B2 (ja) * 2022-01-26 2025-10-07 ウシオ電機株式会社 光加熱装置
JP2024129925A (ja) * 2023-03-14 2024-09-30 株式会社Ｓｃｒｅｅｎホールディングス 放射率調整方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132692A1 (en) * 2001-12-25 2003-07-17 Hiromasa Eguchi Flash emitting device and radiant heating apparatus
US20170309529A1 (en) * 2008-05-02 2017-10-26 Applied Materials, Inc. System for non radial temperature control for rotating substrates

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261038A (ja) 2001-03-02 2002-09-13 Tokyo Electron Ltd 熱処理装置
JP4558411B2 (ja) * 2004-08-24 2010-10-06 富士通セミコンダクター株式会社 急速熱処理装置及び方法
US7102141B2 (en) * 2004-09-28 2006-09-05 Intel Corporation Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
JP4862280B2 (ja) 2005-05-18 2012-01-25 ウシオ電機株式会社 半導体ウエハ急速加熱装置
US9498845B2 (en) * 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US9499909B2 (en) * 2013-03-15 2016-11-22 Applied Materials, Inc. Methods for photo-excitation of precursors in epitaxial processes using a rotary scanning unit
JP6770915B2 (ja) * 2017-03-08 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7461214B2 (ja) 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7677797B2 (ja) * 2021-01-07 2025-05-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP2024046797A (ja) * 2022-09-26 2024-04-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2024116492A (ja) * 2023-02-16 2024-08-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132692A1 (en) * 2001-12-25 2003-07-17 Hiromasa Eguchi Flash emitting device and radiant heating apparatus
US20170309529A1 (en) * 2008-05-02 2017-10-26 Applied Materials, Inc. System for non radial temperature control for rotating substrates

Also Published As

Publication number Publication date
KR102796647B1 (ko) 2025-04-16
KR20220007520A (ko) 2022-01-18
TW202205386A (zh) 2022-02-01
US20220015213A1 (en) 2022-01-13
CN113921419A (zh) 2022-01-11
JP2022015867A (ja) 2022-01-21
JP7501177B2 (ja) 2024-06-18
US12171051B2 (en) 2024-12-17

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