KR102796647B1 - 광 가열 장치 및 가열 처리 방법 - Google Patents

광 가열 장치 및 가열 처리 방법 Download PDF

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Publication number
KR102796647B1
KR102796647B1 KR1020210085416A KR20210085416A KR102796647B1 KR 102796647 B1 KR102796647 B1 KR 102796647B1 KR 1020210085416 A KR1020210085416 A KR 1020210085416A KR 20210085416 A KR20210085416 A KR 20210085416A KR 102796647 B1 KR102796647 B1 KR 102796647B1
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South Korea
Prior art keywords
light
substrate
chamber
main surface
heating device
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KR1020210085416A
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English (en)
Korean (ko)
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KR20220007520A (ko
Inventor
데쓰야 기타가와
다카후미 미조지리
요시아키 나카무라
다케히코 요코모리
게이타 가나즈
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우시오덴키 가부시키가이샤
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Publication of KR20220007520A publication Critical patent/KR20220007520A/ko
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H05B45/18—Controlling the intensity of the light using temperature feedback
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H05B47/155—Coordinated control of two or more light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H05B47/16—Controlling the light source by timing means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Resistance Heating (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Furnace Details (AREA)
KR1020210085416A 2020-07-10 2021-06-30 광 가열 장치 및 가열 처리 방법 Active KR102796647B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020118998A JP7501177B2 (ja) 2020-07-10 2020-07-10 光加熱装置及び加熱処理方法
JPJP-P-2020-118998 2020-07-10

Publications (2)

Publication Number Publication Date
KR20220007520A KR20220007520A (ko) 2022-01-18
KR102796647B1 true KR102796647B1 (ko) 2025-04-16

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Country Link
US (1) US12171051B2 (enExample)
JP (1) JP7501177B2 (enExample)
KR (1) KR102796647B1 (enExample)
CN (1) CN113921419A (enExample)
TW (1) TWI849313B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12125723B2 (en) * 2018-06-25 2024-10-22 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus
US12322613B2 (en) * 2019-08-07 2025-06-03 Samsung Electronics Co., Ltd. Pressure heating apparatus
JP7445571B2 (ja) * 2020-09-24 2024-03-07 東京エレクトロン株式会社 加熱装置及び加熱方法
JP7750154B2 (ja) * 2022-03-28 2025-10-07 ウシオ電機株式会社 光加熱装置、加熱処理方法
JP7750120B2 (ja) * 2022-01-26 2025-10-07 ウシオ電機株式会社 光加熱装置
JP2024129925A (ja) * 2023-03-14 2024-09-30 株式会社Ｓｃｒｅｅｎホールディングス 放射率調整方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261038A (ja) 2001-03-02 2002-09-13 Tokyo Electron Ltd 熱処理装置

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JP4029613B2 (ja) * 2001-12-25 2008-01-09 ウシオ電機株式会社 閃光放射装置および光加熱装置
JP4558411B2 (ja) * 2004-08-24 2010-10-06 富士通セミコンダクター株式会社 急速熱処理装置及び方法
US7102141B2 (en) * 2004-09-28 2006-09-05 Intel Corporation Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
JP4862280B2 (ja) 2005-05-18 2012-01-25 ウシオ電機株式会社 半導体ウエハ急速加熱装置
US9498845B2 (en) * 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
TWI395272B (zh) * 2008-05-02 2013-05-01 Applied Materials Inc 用於旋轉基板之非徑向溫度控制系統
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US9499909B2 (en) * 2013-03-15 2016-11-22 Applied Materials, Inc. Methods for photo-excitation of precursors in epitaxial processes using a rotary scanning unit
JP6770915B2 (ja) * 2017-03-08 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7461214B2 (ja) 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7677797B2 (ja) * 2021-01-07 2025-05-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP2024046797A (ja) * 2022-09-26 2024-04-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2024116492A (ja) * 2023-02-16 2024-08-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261038A (ja) 2001-03-02 2002-09-13 Tokyo Electron Ltd 熱処理装置

Also Published As

Publication number Publication date
TWI849313B (zh) 2024-07-21
KR20220007520A (ko) 2022-01-18
TW202205386A (zh) 2022-02-01
US20220015213A1 (en) 2022-01-13
CN113921419A (zh) 2022-01-11
JP2022015867A (ja) 2022-01-21
JP7501177B2 (ja) 2024-06-18
US12171051B2 (en) 2024-12-17

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