TWI847456B - Plasma treatment equipment - Google Patents
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- TWI847456B TWI847456B TW111150201A TW111150201A TWI847456B TW I847456 B TWI847456 B TW I847456B TW 111150201 A TW111150201 A TW 111150201A TW 111150201 A TW111150201 A TW 111150201A TW I847456 B TWI847456 B TW I847456B
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- 238000009832 plasma treatment Methods 0.000 title description 3
- 239000002245 particle Substances 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 24
- 238000002834 transmittance Methods 0.000 description 19
- 230000005540 biological transmission Effects 0.000 description 18
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- -1 quartz glass Chemical compound 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
一種電漿處理裝置，使高頻電流流經設置於真空容器的外部的天線而在所述真空容器內產生電漿，所述電漿處理裝置包括：狹縫板，堵塞形成於所述真空容器的面向所述天線的位置的開口；介電板，自所述真空容器的外側堵塞形成於所述狹縫板的狹縫；以及遮罩板，自所述真空容器的內側隔開間隙地覆蓋所述狹縫。 A plasma processing device allows a high-frequency current to flow through an antenna disposed outside a vacuum container to generate plasma in the vacuum container. The plasma processing device includes: a slit plate that blocks an opening formed in the vacuum container at a position facing the antenna; a dielectric plate that blocks a slit formed in the slit plate from the outside of the vacuum container; and a mask plate that covers the slit from the inside of the vacuum container with a gap.
Description
本發明是有關於一種使用電漿對被處理物進行處理的電漿處理裝置。 The present invention relates to a plasma processing device that uses plasma to process a processed object.
以往提出有一種電漿處理裝置，使高頻電流流經天線，由藉此產生的感應場產生感應耦合型的電漿(簡稱ICP(Inductively Coupled Plasma))，使用所述感應耦合型的電漿對基板等被處理物實施處理。作為此種電漿處理裝置，專利文獻1中揭示了：藉由將天線配置於真空容器的外部，使自天線產生的高頻磁場通過以堵塞真空容器的側壁的開口的方式設置的磁場透射窗而透射至真空容器內，從而在真空容器內產生電漿。 In the past, a plasma processing device has been proposed, which allows a high-frequency current to flow through an antenna, and generates an inductively coupled plasma (abbreviated as ICP (Inductively Coupled Plasma)) by the inductive field generated thereby, and uses the inductively coupled plasma to process a substrate or other object to be processed. As such a plasma processing device, Patent Document 1 discloses that: by arranging the antenna outside a vacuum container, the high-frequency magnetic field generated by the antenna is transmitted into the vacuum container through a magnetic field transmission window arranged in a manner to block the opening of the side wall of the vacuum container, thereby generating plasma in the vacuum container.
該專利文獻1的電漿處理裝置包括：金屬製的狹縫板，堵塞真空容器的開口；以及介電板，自真空容器的外側堵塞形成於狹縫板的狹縫。在該電漿處理裝置中，使金屬製的狹縫板及重疊於該狹縫板的介電板承擔作為磁場透射窗的功能，因此，與僅使介電板承擔作為磁場透射窗的功能的情況相比，可減小磁場透射窗的厚度。藉此，可縮短自天線至真空容器內為止的距離，從而可將自天線產生的高頻磁場效率良好地供給至真空容器內。 The plasma processing device of the patent document 1 includes: a metal slit plate that blocks the opening of the vacuum container; and a dielectric plate that blocks the slit formed in the slit plate from the outside of the vacuum container. In the plasma processing device, the metal slit plate and the dielectric plate superimposed on the slit plate function as a magnetic field transmission window, so that the thickness of the magnetic field transmission window can be reduced compared to the case where only the dielectric plate functions as a magnetic field transmission window. In this way, the distance from the antenna to the vacuum container can be shortened, so that the high-frequency magnetic field generated by the antenna can be efficiently supplied to the vacuum container.
[現有技術文獻] [Prior art literature]
[專利文獻] [Patent Literature]
專利文獻1：國際公開2020-188809號公報 Patent document 1: International Publication No. 2020-188809
然而，在所述專利文獻1的電漿處理裝置的結構中，由在狹縫附近生成的電漿產生的堆積物、或由因濺射等引起的粒子的繞入而產生的堆積物堆積於介電板，若此種堆積物為導電性，則形成狹縫的內側面經由堆積物而導電。於是，藉由自天線產生的高頻磁場，在狹縫板中亦流動沿著天線的長邊方向的高頻電流，藉由狹縫板或堆積物的發熱而對介電板進行加熱。其結果，有可能會產生介電板的熱應變，或者因介電板與堆積物的化學反應而產生強度降低，從而導致介電板破損等。 However, in the structure of the plasma processing device of the patent document 1, the deposits generated by the plasma generated near the slit or the deposits generated by the entanglement of particles due to spattering, etc. are deposited on the dielectric plate. If such deposits are conductive, the inner side of the slit is conductive through the deposits. Therefore, due to the high-frequency magnetic field generated by the antenna, a high-frequency current along the long side of the antenna also flows in the slit plate, and the dielectric plate is heated by the heat generated by the slit plate or the deposits. As a result, thermal strain of the dielectric plate may occur, or strength may be reduced due to chemical reaction between the dielectric plate and the deposits, thereby causing damage to the dielectric plate, etc.
而且，若如上所述般狹縫間藉由堆積物而導電，則介電板的表面被導電化，因此自天線產生的高頻磁場被屏蔽，透射至真空容器內的高頻磁場降低，從而引起電漿密度的降低或不穩定性。 Furthermore, if the narrow gap is electrically conductive through the deposits as described above, the surface of the dielectric plate is electrically conductive, thus shielding the high-frequency magnetic field generated by the antenna and reducing the high-frequency magnetic field transmitted into the vacuum container, thereby causing a decrease in plasma density or instability.
進而，介電板亦有可能因所生成的電漿的熱或由電漿產生的來自被處理物的輻射而溫度上升從而導致破損。 Furthermore, the dielectric board may also be damaged due to the heat of the generated plasma or the radiation from the processed object generated by the plasma, causing the temperature to rise.
本發明是為了一舉解決所述問題而成者，其主要課題在於，於在真空容器的外部配置天線，並將介電板與狹縫板重疊而構成磁場透射窗的電漿處理裝置中，防止介電板的污染並抑制高頻磁場的透射率的降低及由感應電流引起的發熱，並且抑制由電 漿引起的介電板的溫度上升。 The present invention is designed to solve the above-mentioned problems in one fell swoop. Its main subject is to prevent the contamination of the dielectric plate and suppress the reduction of the transmittance of the high-frequency magnetic field and the heat caused by the induced current in a plasma processing device in which an antenna is arranged outside a vacuum container and a dielectric plate and a slit plate are overlapped to form a magnetic field transmission window, and to suppress the temperature rise of the dielectric plate caused by plasma.
即，本發明的電漿處理裝置使高頻電流流經設置於真空容器的外部的天線而在所述真空容器內產生電漿，所述電漿處理裝置的特徵在於包括：狹縫板，堵塞形成於所述真空容器的面向所述天線的位置的開口；介電板，自所述真空容器的外側堵塞形成於所述狹縫板的狹縫；以及遮罩板，自所述真空容器的內側隔開間隙地覆蓋所述狹縫。 That is, the plasma processing device of the present invention allows a high-frequency current to flow through an antenna disposed outside a vacuum container to generate plasma in the vacuum container, and the plasma processing device is characterized in that it includes: a slit plate that blocks an opening formed in the vacuum container at a position facing the antenna; a dielectric plate that blocks the slit formed in the slit plate from the outside of the vacuum container; and a mask plate that covers the slit from the inside of the vacuum container with a gap.
若為此種結構，則藉由利用遮罩板自真空容器的內側覆蓋形成於狹縫板的狹縫，自真空容器的內側觀察時介電板被隱藏，因此可防止導電性的飛濺物等附著於介電板而造成污染。藉此，可防止介電板的表面被導電化，抑制高頻磁場的透射率的降低，並且亦可防止在介電板的表面流動感應電流而引起的發熱。而且，由於在遮罩板與狹縫板之間設置有間隙，因此可減小沿著天線而在遮罩板及狹縫板中產生的感應電流，可效率良好地抑制高頻磁場的透射率的降低。 With this structure, the slit formed in the slit plate is covered by a shield plate from the inner side of the vacuum container, and the dielectric plate is hidden when observed from the inner side of the vacuum container, thereby preventing conductive splashes from adhering to the dielectric plate and causing contamination. In this way, the surface of the dielectric plate can be prevented from being conductive, the reduction in the transmittance of the high-frequency magnetic field can be suppressed, and the heat caused by the flow of the induced current on the surface of the dielectric plate can also be prevented. In addition, since a gap is provided between the shield plate and the slit plate, the induced current generated in the shield plate and the slit plate along the antenna can be reduced, and the reduction in the transmittance of the high-frequency magnetic field can be efficiently suppressed.
另外，由於藉由遮罩板來覆蓋狹縫，因此自狹縫露出的介電板不會直接暴露於電漿或被處理物，因此可抑制由輻射等引起的介電板的溫度上升從而防止破損。 In addition, since the slit is covered by a mask plate, the dielectric plate exposed from the slit will not be directly exposed to plasma or the workpiece, so the temperature rise of the dielectric plate caused by radiation, etc. can be suppressed to prevent damage.
另外，較佳為，所述電漿處理裝置中，所述遮罩板形成有自厚度方向觀察時與所述天線交叉的多個狹縫，藉由形成於所述多個狹縫間的樑狀區域來覆蓋所述狹縫板的狹縫。 In addition, it is preferred that in the plasma processing device, the mask plate is formed with a plurality of slits intersecting the antenna when viewed from the thickness direction, and the slits of the slit plate are covered by a beam-shaped region formed between the plurality of slits.
如此一來，藉由在遮罩板形成多個狹縫，可使高頻磁場效率良好地地透射至真空容器的內側。進而，由於以與天線交叉的方式形成有多個狹縫，因此可減小沿著天線在遮罩板中流動的感應電流。藉此，可抑制遮罩板中的高頻磁場的透射率的降低，且可抑制遮罩板的溫度上升及由伴隨於此的輻射引起的介電板的溫度上升。 Thus, by forming a plurality of slits in the shield plate, the high-frequency magnetic field can be efficiently transmitted to the inner side of the vacuum container. Furthermore, since a plurality of slits are formed in a manner intersecting the antenna, the induced current flowing in the shield plate along the antenna can be reduced. In this way, the reduction in the transmittance of the high-frequency magnetic field in the shield plate can be suppressed, and the temperature rise of the shield plate and the temperature rise of the dielectric plate caused by the radiation accompanying this can be suppressed.
另外，較佳為，所述電漿處理裝置包括多枚所述遮罩板，所述遮罩板沿著其厚度方向隔開間隙，所述各遮罩板的所述樑狀區域沿著天線的長邊方向相互錯開地覆蓋所述狹縫板的狹縫。 In addition, preferably, the plasma processing device includes a plurality of the mask plates, the mask plates are separated by gaps along the thickness direction, and the beam-shaped regions of the mask plates cover the slits of the slit plates in a staggered manner along the long side direction of the antenna.
如此一來，藉由利用多個遮罩板的樑狀區域來覆蓋狹縫板的狹縫，與利用單一的遮罩板覆蓋狹縫板的狹縫的情況相比，可減小各遮罩板的樑狀區域的寬度(沿著天線的長度)。藉此，可減小各遮罩板中產生的感應電流，且可進一步抑制高頻磁場的透射率的降低。另外，由於可抑制起因於各遮罩板的高頻磁場的透射率的降低，因此可擴大狹縫板中的各狹縫寬度，而且縮窄該狹縫間的寬度，從而可更進一步增大高頻磁場的透射率。 In this way, by using the beam-shaped areas of multiple shielding plates to cover the slits of the slit plate, the width of the beam-shaped area of each shielding plate (the length along the antenna) can be reduced compared to the case where the slits of the slit plate are covered with a single shielding plate. In this way, the induced current generated in each shielding plate can be reduced, and the reduction in the transmittance of the high-frequency magnetic field can be further suppressed. In addition, since the reduction in the transmittance of the high-frequency magnetic field caused by each shielding plate can be suppressed, the width of each slit in the slit plate can be expanded, and the width between the slits can be narrowed, thereby further increasing the transmittance of the high-frequency magnetic field.
此處，在多個遮罩板相互接觸的情形時，藉由實效的樑狀區域的寬度變大，感應電流容易在遮罩板中流動，但在所述結構中，以相互不接觸的方式隔開間隙地設置多個遮罩板，因此可減小實效的樑用區域的寬度，藉此，可減小各遮罩板中產生的感應電流，從而可有效果地抑制高頻磁場的透射率。 Here, when multiple shield plates are in contact with each other, the width of the effective beam-shaped area becomes larger, and the induced current easily flows in the shield plate. However, in the above structure, multiple shield plates are arranged at intervals in a manner that they do not contact each other, so the width of the effective beam-use area can be reduced, thereby reducing the induced current generated in each shield plate, thereby effectively suppressing the transmittance of the high-frequency magnetic field.
進而，藉由相互隔開間隙地設置多個遮罩板，亦可抑制由於多個遮罩板相互接觸而會沿著天線產生的電漿密度的不均。 Furthermore, by providing multiple shielding plates with gaps between them, it is also possible to suppress the unevenness of plasma density along the antenna caused by the contact between the multiple shielding plates.
在包括狹縫板及遮罩板的所述結構中，作為整體的高頻磁場的透射率成為不將各板積層而僅使用單體時的透射率的積。因此，就抑制高頻磁場的透射率的降低的觀點而言，較佳為使遮罩板的各樑狀區域的寬度較不具有遮罩板時的狹縫板的樑狀區域的寬度窄，具體而言，例如較佳為10mm以下，更佳為5mm以下。基於同樣的理由，狹縫板中的各狹縫間的寬度例如較佳為10mm以下，更佳為5mm以下。 In the structure including the slit plate and the shield plate, the transmittance of the high-frequency magnetic field as a whole becomes the product of the transmittance when the plates are not stacked and only a single body is used. Therefore, from the perspective of suppressing the reduction of the transmittance of the high-frequency magnetic field, it is preferred to make the width of each beam-shaped area of the shield plate narrower than the width of the beam-shaped area of the slit plate without the shield plate, specifically, for example, preferably less than 10 mm, more preferably less than 5 mm. For the same reason, the width between each slit in the slit plate is preferably less than 10 mm, more preferably less than 5 mm.
若使遮罩板的各樑狀區域的寬度處於此種範圍內，則即便設為利用遮罩板覆蓋狹縫板的結構，亦可充分減小遮罩板中流動的感應電流，從而可有效果地抑制高頻磁場的透射率的降低。 If the width of each beam-shaped region of the shield plate is within this range, even if the shield plate is used to cover the slit plate, the induced current flowing in the shield plate can be sufficiently reduced, thereby effectively suppressing the reduction in the transmittance of the high-frequency magnetic field.
另外，較佳為，所述電漿處理裝置中，所述遮罩板連接於所述狹縫板的向內面上的設定於所述狹縫的延伸方向外側的連接區域。 In addition, it is preferred that in the plasma processing device, the mask plate is connected to a connection area on the inner surface of the slit plate that is set outside the extension direction of the slit.
遮罩板與狹縫板的連接部位特別容易流動感應電流，若設為此種結構，在狹縫板的向內面上，在遠離天線的位置連接遮罩板，因此可效率良好地抑制高頻磁場的透射率的降低。 The connection between the shield plate and the slit plate is particularly prone to the flow of induced current. If this structure is used, the shield plate is connected to the inner surface of the slit plate at a position far away from the antenna, so the reduction in the transmittance of the high-frequency magnetic field can be effectively suppressed.
另外，較佳為，所述電漿處理裝置中，在所述狹縫板中的連接區域的附近形成有供冷卻介質流動的流路。 In addition, it is preferred that in the plasma processing device, a flow path for the cooling medium to flow is formed near the connection area in the slit plate.
如此一來，可在對狹縫板進行冷卻的同時亦對遮罩板進行冷卻，從而可抑制由輻射引起的熱向介電板的流動。 In this way, the slit plate can be cooled while the shield plate is cooled, thereby suppressing the flow of heat caused by radiation to the dielectric plate.
另外，所述電漿處理裝置中，所述遮罩板亦可安裝於形成有所述開口的所述真空容器的側壁、或者介於該側壁與所述狹縫板之間的凸緣構件。 In addition, in the plasma processing device, the mask plate can also be installed on the side wall of the vacuum container having the opening, or on a flange member between the side wall and the slit plate.
如此一來，可將遮罩板與狹縫板分離地設置，因此可提高作業性。 In this way, the mask plate and the slit plate can be set separately, thereby improving workability.
就抑制由來自遮罩板的輻射引起的介電板的溫度上升的觀點而言，較佳為遮罩板與狹縫板的間隙寬。另一方面，若間隙過寬，則會在間隙內生成電漿，被處理物的周邊的電漿密度有可能降低。因此，遮罩板與狹縫板的間隙的沿著厚度方向的長度較佳為5mm以下。 From the perspective of suppressing the temperature rise of the dielectric plate caused by radiation from the shield plate, the gap width between the shield plate and the slit plate is preferred. On the other hand, if the gap is too wide, plasma will be generated in the gap, and the plasma density around the processed object may decrease. Therefore, the length of the gap between the shield plate and the slit plate along the thickness direction is preferably less than 5 mm.
另外，根據所使用的氣體種類、氣壓或施加至天線的電流的大小，有可能會在遮罩板與狹縫板的間隙處產生電漿。 In addition, depending on the type of gas used, the air pressure, or the amount of current applied to the antenna, plasma may be generated in the gap between the mask plate and the slit plate.
因此，較佳為，所述電漿處理裝置中，在所述狹縫板與所述遮罩板的間隙內設置有遮蔽壁，所述遮蔽壁對沿著所述天線的長邊方向運動的帶電粒子進行遮蔽。 Therefore, it is preferred that in the plasma processing device, a shielding wall is provided in the gap between the slit plate and the shielding plate, and the shielding wall shields the charged particles moving along the long side direction of the antenna.
如此一來，可藉由遮蔽壁來抑制間隙內的帶電粒子沿著天線的長邊方向的運動，從而可防止在間隙內產生放電。 In this way, the shielding wall can suppress the movement of charged particles in the gap along the long side of the antenna, thereby preventing discharge from occurring in the gap.
另外，較佳為，所述電漿處理裝置中，所述狹縫板及所述遮罩板為接地電位，或者被施加交流電壓。 In addition, it is preferred that in the plasma processing device, the slit plate and the mask plate are at ground potential or are applied with an alternating voltage.
如此一來，藉由在利用遮罩板遮蔽高頻電場的基礎上施加必要的電壓，對電漿任意地賦予電位，而可控制帶電粒子向相向的基板等被處理物的入射能量。 In this way, by applying the necessary voltage on the basis of shielding the high-frequency electric field with a mask plate, the potential can be arbitrarily given to the plasma, and the incident energy of the charged particles to the opposite substrate or other processed object can be controlled.
藉由如此構成的本發明，於在真空容器的外部配置天線，且將介電板與狹縫板重疊而構成磁場透射窗的電漿處理裝置中，可防止介電板的污染並抑制高頻磁場的透射率的降低及由感應電流引起的發熱，並且可抑制由電漿引起的介電板的溫度上升。 By means of the present invention thus constructed, in a plasma processing device in which an antenna is arranged outside a vacuum container and a dielectric plate and a slit plate are overlapped to form a magnetic field transmission window, contamination of the dielectric plate can be prevented, a decrease in the transmittance of a high-frequency magnetic field and heat generation caused by an induced current can be suppressed, and a temperature rise of the dielectric plate caused by plasma can be suppressed.
1:真空容器 1: Vacuum container
1a:上壁 1a: Upper wall
1x:開口 1x: Open
2:天線 2: Antenna
2a:供電端部 2a: Power supply end
2b:終端部 2b: Terminal end
3:高頻電源 3: High frequency power supply
4:真空排氣裝置 4: Vacuum exhaust device
5:基板保持器 5: Substrate holder
6:偏壓電源 6: Bias power supply
7:狹縫板 7: Slit board
7c:流路 7c: Flow path
7p:突出部 7p: protrusion
7R:連接區域 7R: Connection area
7x:狹縫 7x: Narrow seam
8:介電板 8: Dielectric board
9:遮罩板 9: Mask board
9a:突起部 9a: protrusion
9p:突出部 9p: protrusion
9x:狹縫 9x: Narrow seam
9z:樑狀區域 9z: beam-shaped area
11:氣體導入口 11: Gas inlet
31:整合電路 31: Integrated circuit
51:加熱器 51: Heater
71、91:向外面 71, 91: outwards
72:向內面 72: Inward
100:電漿處理裝置 100: Plasma treatment device
G、G':間隙 G, G': gap
IR:高頻電流 IR: High frequency current
O:基板 O: Substrate
P:感應耦合型電漿 P: Inductively coupled plasma
S:密封構件 S: Sealing components
SW:遮蔽壁 SW: Shelter wall
W:磁場透射窗 W: Magnetic field transmission window
圖1是示意性地表示一實施方式的電漿處理裝置的結構的縱剖面圖。 FIG1 is a longitudinal cross-sectional view schematically showing the structure of a plasma processing device according to one embodiment.
圖2是示意性地表示該實施方式的電漿處理裝置的結構的橫剖面圖。 FIG2 is a cross-sectional view schematically showing the structure of the plasma processing device of this embodiment.
圖3是示意性地表示該實施方式中的磁場透射窗附近的結構的剖面圖。 FIG3 is a cross-sectional view schematically showing the structure near the magnetic field transmission window in this embodiment.
圖4是自真空容器的內側觀察該實施方式中的磁場透射窗附近的結構的平面圖。 FIG4 is a plan view of the structure near the magnetic field transmission window in this embodiment as viewed from the inner side of the vacuum container.
圖5是自真空容器的內側觀察該實施方式中的磁場透射窗附近的結構的立體圖。 FIG5 is a three-dimensional diagram of the structure near the magnetic field transmission window in this embodiment observed from the inner side of the vacuum container.
圖6是示意性地表示另一實施方式中的磁場透射窗附近的結構的縱剖面圖。 FIG6 is a longitudinal cross-sectional view schematically showing the structure near the magnetic field transmission window in another embodiment.
圖7是示意性地表示另一實施方式中的磁場透射窗附近的結構的橫剖面圖。 FIG7 is a cross-sectional view schematically showing the structure near the magnetic field transmission window in another embodiment.
圖8是示意性地表示另一實施方式中的磁場透射窗附近的結 構的橫剖面圖。 FIG8 is a cross-sectional view schematically showing the structure near the magnetic field transmission window in another embodiment.
圖9是示意性地表示另一實施方式中的磁場透射窗附近的結構的橫剖面圖。 FIG9 is a cross-sectional view schematically showing the structure near the magnetic field transmission window in another embodiment.
以下，參照圖式對本發明的電漿處理裝置的一實施方式進行說明。 Below, an implementation method of the plasma processing device of the present invention is described with reference to the drawings.
<裝置結構> <Device structure>
本實施方式的電漿處理裝置100使用感應耦合型的電漿P對基板O實施處理。此處，基板O例如為液晶顯示器或有機電致發光(electroluminescent，EL)顯示器等平板顯示器(Flat Panel Display，FPD)用的基板、柔性顯示器用的柔性基板等。另外，對基板O實施的處理例如為利用電漿化學氣相沈積(Chemical Vapor Deposition，CVD)法的膜形成、蝕刻、灰化、濺鍍等。 The plasma processing device 100 of this embodiment uses an inductively coupled plasma P to process a substrate O. Here, the substrate O is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescent (EL) display, a flexible substrate for a flexible display, etc. In addition, the processing performed on the substrate O is, for example, film formation, etching, ashing, sputtering, etc. using a plasma chemical vapor deposition (CVD) method.
再者，該電漿處理裝置100在藉由電漿CVD法進行膜形成的情形時亦稱為電漿CVD裝置，在進行蝕刻的情形時亦稱為電漿蝕刻裝置，在進行灰化的情形時亦稱為電漿灰化裝置，在進行濺鍍的情形時亦稱為電漿濺鍍裝置。 Furthermore, the plasma processing device 100 is also called a plasma CVD device when performing film formation by a plasma CVD method, a plasma etching device when performing etching, a plasma ashing device when performing ashing, and a plasma sputtering device when performing sputtering.
具體而言，如圖1及圖2所示，電漿處理裝置100包括：真空容器1，經真空排氣且被導入氣體；天線2，設置於真空容器1的外部；以及高頻電源3，對天線2施加高頻。在所述結構中，藉由自高頻電源3對天線2施加高頻，而在天線2中流動高頻電流IR，在真空容器1內產生感應電場而生成感應耦合型的電漿P。 Specifically, as shown in FIG. 1 and FIG. 2 , the plasma processing device 100 includes: a vacuum container 1, which is evacuated and into which gas is introduced; an antenna 2, which is arranged outside the vacuum container 1; and a high-frequency power supply 3, which applies a high frequency to the antenna 2. In the structure, by applying a high frequency from the high-frequency power supply 3 to the antenna 2, a high-frequency current IR flows in the antenna 2, and an induced electric field is generated in the vacuum container 1 to generate an inductively coupled plasma P.
真空容器1例如為金屬製的容器，在其壁(此處為上壁1a)形成有沿厚度方向貫通的開口1x。此處，該真空容器1電性接地，其內部藉由真空排氣裝置4進行真空排氣。 The vacuum container 1 is, for example, a metal container, and an opening 1x is formed on its wall (here, the upper wall 1a) that passes through in the thickness direction. Here, the vacuum container 1 is electrically grounded, and its interior is vacuum-exhausted by a vacuum exhaust device 4.
另外，例如經由設置於流量調整器(省略圖示)或真空容器1的一個或多個氣體導入口11向真空容器1內導入氣體。氣體設為與對基板O實施的處理內容相應的氣體即可。例如，在藉由電漿CVD法對基板進行膜形成的情形時，氣體為原料氣體或利用稀釋氣體(例如H2)將其稀釋所得的氣體。若進一步列舉具體例，則在原料氣體為SiH4的情形時，可在基板上形成Si膜，在為SiH4+NH3的情形時，可在基板上形成SiN膜，在為SiH4+O2的情形時，可在基板上形成SiO2膜，在為SiF4+N2的情形時，可在基板上形成SiN：F膜(氮氟化矽膜)。 In addition, gas is introduced into the vacuum container 1, for example, through one or more gas introduction ports 11 provided in a flow rate regulator (not shown) or the vacuum container 1. The gas may be a gas corresponding to the processing content to be performed on the substrate O. For example, when a film is formed on the substrate by a plasma CVD method, the gas is a raw material gas or a gas obtained by diluting it with a diluent gas (for example, H 2 ). To give more specific examples, when the raw material gas is SiH 4 , a Si film can be formed on the substrate, when it is SiH 4 + NH 3 , a SiN film can be formed on the substrate, when it is SiH 4 + O 2 , a SiO 2 film can be formed on the substrate, and when it is SiF 4 + N 2 , a SiN:F film (silicon nitride fluoride film) can be formed on the substrate.
在該真空容器1的內部設置有保持基板O的基板保持器5。如該例子般，亦可自偏壓電源6對基板保持器5施加偏壓電壓。偏壓電壓例如為負的直流電壓、負的偏壓電壓等，但並不限於此。藉由此種偏壓電壓，例如可控制電漿P中的正離子入射至基板O時的能量，從而可進行形成於基板O的表面的膜的結晶度的控制等。可在基板保持器5內預先設置對基板O進行加熱的加熱器51。 A substrate holder 5 for holding the substrate O is provided inside the vacuum container 1. As in this example, a bias voltage can also be applied to the substrate holder 5 from the bias power supply 6. The bias voltage is, for example, a negative DC voltage, a negative bias voltage, etc., but is not limited thereto. By means of such a bias voltage, for example, the energy of positive ions in the plasma P when incident on the substrate O can be controlled, thereby controlling the crystallinity of the film formed on the surface of the substrate O. A heater 51 for heating the substrate O can be pre-set in the substrate holder 5.
如圖1及圖2所示，天線2以面向形成於真空容器1的開口1x的方式配置。再者，天線2的根數不限於一根，亦可設置多根天線2。 As shown in FIG. 1 and FIG. 2 , the antenna 2 is arranged to face the opening 1x formed in the vacuum container 1. Furthermore, the number of antennas 2 is not limited to one, and multiple antennas 2 may be provided.
如圖2所示，天線2的作為其一端部的供電端部2a經 由整合電路31而連接有高頻電源3，作為另一端部的終端部2b直接接地。再者，終端部2b亦可經由電容器或線圈等接地。 As shown in FIG2 , the power supply end 2a of the antenna 2 as one end is connected to the high-frequency power source 3 via the integrated circuit 31, and the terminal end 2b as the other end is directly grounded. Furthermore, the terminal end 2b can also be grounded via a capacitor or a coil.
高頻電源3可經由整合電路31而在天線2中流動高頻電流IR。高頻的頻率例如為通常的13.56MHz，但並不限於此，可適宜變更。 The high-frequency power source 3 can flow the high-frequency current IR in the antenna 2 via the integrated circuit 31. The frequency of the high frequency is, for example, the usual 13.56MHz, but it is not limited to this and can be changed appropriately.
該電漿處理裝置100更包括：狹縫板7，自真空容器1的外側堵塞形成於真空容器1的壁(上壁1a)的開口1x；以及介電板8，自真空容器1的外側堵塞形成於狹縫板7的狹縫7x。 The plasma processing device 100 further includes: a slit plate 7, which blocks the opening 1x formed on the wall (upper wall 1a) of the vacuum container 1 from the outside of the vacuum container 1; and a dielectric plate 8, which blocks the slit 7x formed on the slit plate 7 from the outside of the vacuum container 1.
狹縫板7使由天線2產生的高頻磁場在真空容器1內透射，並且防止電場自真空容器1的外部進入真空容器1的內部。具體而言，該狹縫板7為沿著天線2的長邊方向形成有多個沿其厚度方向貫通而成的狹縫7x的平板狀者。該狹縫板7較佳為機械強度較後述的介電板8高，且較佳為厚度尺寸較介電板8大。並且，自厚度方向觀察時，多個狹縫7x相互平行且以與天線2交叉(具體而言為正交)的方式形成。多個狹縫7x均為相同形狀(具體而言為俯視矩形形狀)，沿著天線2的長邊方向的長度(寬度)例如為5mm以上且30mm以下，但並不限於此。 The slit plate 7 allows the high-frequency magnetic field generated by the antenna 2 to pass through the vacuum container 1, and prevents the electric field from entering the vacuum container 1 from the outside. Specifically, the slit plate 7 is a flat plate having a plurality of slits 7x formed along the long side of the antenna 2 and extending in the thickness direction thereof. The slit plate 7 preferably has a higher mechanical strength than the dielectric plate 8 described later, and preferably has a larger thickness than the dielectric plate 8. Furthermore, when viewed from the thickness direction, the plurality of slits 7x are parallel to each other and are formed in a manner intersecting (specifically, orthogonal to) the antenna 2. The multiple slits 7x are all of the same shape (specifically, a rectangular shape when viewed from above), and the length (width) along the long side of the antenna 2 is, for example, greater than 5 mm and less than 30 mm, but is not limited thereto.
若更具體地進行說明，則狹縫板7是藉由將例如選自包含Cu、Al、Zn、Ni、Sn、Si、Ti、Fe、Cr、Nb、C、Mo、W或Co的群組中的一種金屬或該些的合金(例如不鏽鋼合金、鋁合金等)等金屬材料進行軋製加工(例如冷軋或熱軋)等所製造，例如厚度為約5mm。但製造方法或厚度並不限於此，可根據規格適 宜變更。 To explain more specifically, the slit plate 7 is manufactured by rolling (e.g., cold rolling or hot rolling) a metal material such as a metal selected from a group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co or an alloy thereof (e.g., stainless steel alloy, aluminum alloy, etc.), and the thickness is, for example, about 5 mm. However, the manufacturing method or thickness is not limited thereto and can be appropriately changed according to the specifications.
該狹縫板7在俯視時較真空容器的開口1x大，且在被上壁1a支撐的狀態下堵塞開口1x。在狹縫板7與上壁1a之間介插有O形環或墊圈等密封構件S(參照圖1及圖2)，該些之間被真空密封。 The slit plate 7 is larger than the opening 1x of the vacuum container when viewed from above, and blocks the opening 1x while being supported by the upper wall 1a. A sealing member S such as an O-ring or a gasket is inserted between the slit plate 7 and the upper wall 1a (see Figures 1 and 2), and the space between them is vacuum-sealed.
介電板8設置於狹縫板7中朝向真空容器1的外側的向外面71(朝向真空容器1的內部的向內面的背面)，以堵塞狹縫板7的狹縫7x。 The dielectric plate 8 is disposed on the outer surface 71 of the slit plate 7 facing the outer side of the vacuum container 1 (the back side of the inner surface facing the inside of the vacuum container 1) to block the slit 7x of the slit plate 7.
介電板8整體包含介電物質，呈平板狀，例如包含氧化鋁、碳化矽、氮化矽等陶瓷、石英玻璃、無鹼玻璃等無機材料、氟樹脂(例如鐵氟龍)等樹脂材料等。再者，就減少介電損失的觀點而言，構成介電板8的材料較佳為介電損耗正切為0.01以下者，更佳為0.005以下者。 The dielectric plate 8 as a whole comprises a dielectric material and is in the form of a flat plate, for example, ceramics such as aluminum oxide, silicon carbide, silicon nitride, inorganic materials such as quartz glass, alkali-free glass, resin materials such as fluororesins (such as Teflon), etc. Furthermore, from the perspective of reducing dielectric loss, the material constituting the dielectric plate 8 is preferably one with a dielectric loss tangent of 0.01 or less, and more preferably one with a dielectric loss tangent of 0.005 or less.
此處使介電板8的板厚小於狹縫板7的板厚，但並不限定於此，例如在對真空容器1進行真空排氣的狀態下，具備可承受自狹縫7x受到的真空容器1的內外的差壓的強度即可，可根據狹縫7x的條數或長度等規格適宜設定。但就縮短天線2與真空容器1之間的距離的觀點而言，較佳為較薄。 Here, the thickness of the dielectric plate 8 is made smaller than that of the slit plate 7, but it is not limited to this. For example, when the vacuum container 1 is evacuated, it only needs to have a strength that can withstand the differential pressure between the inside and outside of the vacuum container 1 received by the slit 7x. It can be appropriately set according to the specifications such as the number or length of the slit 7x. However, from the perspective of shortening the distance between the antenna 2 and the vacuum container 1, it is better to be thinner.
藉由所述結構，狹縫板7及介電板8作為使由天線2產生的磁場透射的磁場透射窗W發揮功能。即，若自高頻電源3對天線2施加高頻，則由天線2產生的高頻磁場透射包含狹縫板7及介電板8的磁場透射窗W而形成(供給)至真空容器1內。藉 此，在真空容器1內的空間產生感應電場，從而生成感應耦合型的電漿P。 With the above structure, the slit plate 7 and the dielectric plate 8 function as a magnetic field transmission window W that transmits the magnetic field generated by the antenna 2. That is, if a high frequency is applied to the antenna 2 from the high frequency power source 3, the high frequency magnetic field generated by the antenna 2 is transmitted through the magnetic field transmission window W including the slit plate 7 and the dielectric plate 8 and is formed (supplied) into the vacuum container 1. Thus, an induced electric field is generated in the space inside the vacuum container 1, thereby generating an inductively coupled plasma P.
並且，如圖1及圖2所示，本實施方式的電漿處理裝置100更包括遮罩板9，所述遮罩板9自真空容器1的內側隔開間隙G地覆蓋形成於狹縫板7的各狹縫7x。 Furthermore, as shown in FIG. 1 and FIG. 2 , the plasma processing device 100 of the present embodiment further includes a mask plate 9, and the mask plate 9 covers each slit 7x formed in the slit plate 7 with a gap G separated from the inner side of the vacuum container 1.
若更具體地進行說明，則如圖3~圖5所示，遮罩板9為沿著天線2的長邊方向形成有多個沿其厚度方向貫通而成的狹縫9x的平板狀者。自厚度方向觀察時，所述多個狹縫9x相互平行，且形成為與形成於狹縫板7的多個狹縫7x平行。此處，各狹縫9x形成為與天線2交叉(具體地而言為正交)。多個狹縫9x均形成為相同形狀(具體而言為俯視矩形形狀)。 To explain more specifically, as shown in Figures 3 to 5, the shield plate 9 is a flat plate having multiple slits 9x formed along the long side of the antenna 2 and extending in the thickness direction thereof. When viewed from the thickness direction, the multiple slits 9x are parallel to each other and are formed to be parallel to the multiple slits 7x formed in the slit plate 7. Here, each slit 9x is formed to intersect the antenna 2 (specifically, orthogonal). The multiple slits 9x are all formed in the same shape (specifically, a rectangular shape when viewed from above).
在遮罩板9中的相鄰的狹縫9x間形成有與各狹縫9x平行的樑狀區域9z。該樑狀區域9z以與形成於狹縫板7的多個狹縫7x對應的方式形成有多個，藉由各樑狀區域9z來覆蓋狹縫板7的各狹縫7x。此處，沿著天線2的長邊方向的樑狀區域9z的長度(寬度)與狹縫板7的狹縫7x的寬度大致相同，各樑狀區域9z覆蓋狹縫板7的各狹縫7x的大致全部。再者，就提高磁場的透射率的觀點而言，各樑狀區域9z的寬度越窄越較佳，例如較佳為10mm以下，更佳為5mm以下。另外，各樑狀區域9z亦可形成為僅覆蓋各狹縫7x的一部分。 A beam-shaped region 9z parallel to each slit 9x is formed between adjacent slits 9x in the mask plate 9. A plurality of beam-shaped regions 9z are formed in a manner corresponding to the plurality of slits 7x formed in the slit plate 7, and each beam-shaped region 9z covers each slit 7x of the slit plate 7. Here, the length (width) of the beam-shaped region 9z along the long side direction of the antenna 2 is substantially the same as the width of the slit 7x of the slit plate 7, and each beam-shaped region 9z covers substantially all of each slit 7x of the slit plate 7. Furthermore, from the perspective of improving the transmittance of the magnetic field, the narrower the width of each beam-shaped region 9z, the better, for example, preferably less than 10 mm, and more preferably less than 5 mm. In addition, each beam-shaped region 9z can also be formed to cover only a portion of each slit 7x.
另外，遮罩板9連接於狹縫板7的設定於向內面72的連接區域7R。該連接區域7R設定於狹縫板7的向內面72上的多 個狹縫7x的延伸方向的兩外側，且為沿著天線2的長邊方向延伸的長條狀的區域。在遮罩板9的向外面91形成有朝向狹縫板7的向內面72突出的突起部9a，該突起部9a連接於狹縫板7的設定於向內面72的連接區域7R。突起部9a形成於遮罩板9的向外面91中的沿著多個狹縫9x的延伸方向的兩外側，且形成沿著天線2的長邊方向自遮罩板9的其中一端部延伸至另一端部的棒狀。再者，遮罩板9電性連接於狹縫板7且均設為接地電位。 In addition, the shield plate 9 is connected to the connection area 7R set on the inner surface 72 of the slit plate 7. The connection area 7R is set on both outer sides of the extension direction of the multiple slits 7x on the inner surface 72 of the slit plate 7, and is a long strip-shaped area extending along the long side direction of the antenna 2. A protrusion 9a protruding toward the inner surface 72 of the slit plate 7 is formed on the outer surface 91 of the shield plate 9, and the protrusion 9a is connected to the connection area 7R set on the inner surface 72 of the slit plate 7. The protrusion 9a is formed on both outer sides of the outer surface 91 of the shield plate 9 along the extension direction of the multiple slits 9x, and is formed in a rod shape extending from one end of the shield plate 9 to the other end along the long side direction of the antenna 2. Furthermore, the shielding plate 9 is electrically connected to the slit plate 7 and both are set to ground potential.
進而，遮罩板9被設置為，其向外面91與狹縫板7的向內面72大致平行(即，隔開一定的間隙G)。遮罩板9的向外面與狹縫板7的向內面72的間隙G的尺寸較佳為設定為5mm以下的值。 Furthermore, the shielding plate 9 is arranged so that its outer surface 91 is roughly parallel to the inner surface 72 of the slit plate 7 (i.e., separated by a certain gap G). The size of the gap G between the outer surface of the shielding plate 9 and the inner surface 72 of the slit plate 7 is preferably set to a value of less than 5 mm.
具體而言，遮罩板9例如包括選自包含Cu、Al、Zn、Ni、Sn、Si、Ti、Fe、Cr、Nb、C、Mo、W或Co的群組中的一種金屬或該些的合金(例如不鏽鋼合金、鋁合金等)等金屬材料。遮罩板9的厚度較佳為較狹縫板7的厚度小，例如為約5mm以下。但是，遮罩板9的厚度並不限於此，可根據規格適宜變更。 Specifically, the shield plate 9 includes, for example, a metal selected from the group consisting of Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co or an alloy thereof (e.g., stainless steel alloy, aluminum alloy, etc.). The thickness of the shield plate 9 is preferably smaller than the thickness of the slit plate 7, for example, about 5 mm or less. However, the thickness of the shield plate 9 is not limited thereto and can be appropriately changed according to the specifications.
另外，在該實施方式中，在狹縫板7形成有(或設置有)供水等冷卻介質流動的流路7c。該流路7c沿著天線2的長邊方向形成於狹縫板7中的連接區域7R的附近。此處，流路7c形成為沿著狹縫板7的厚度方向位於連接區域7R的正上方。 In addition, in this embodiment, a flow path 7c for the flow of a cooling medium such as water is formed (or provided) in the slit plate 7. The flow path 7c is formed near the connection area 7R in the slit plate 7 along the long side direction of the antenna 2. Here, the flow path 7c is formed to be located directly above the connection area 7R along the thickness direction of the slit plate 7.
<本實施方式的效果> <Effects of this implementation method>
根據如此構成的本實施方式的電漿處理裝置100，藉由利用 遮罩板9自真空容器1的內側覆蓋形成於狹縫板7的狹縫7x，自真空容器1的內側觀察時介電板8被隱藏，因此可防止導電性的飛濺物等附著於介電板8而造成污染。藉此，可防止介電板8的表面被導電化，抑制高頻磁場的透射率的降低，並且亦可防止在介電板8的表面流動感應電流而引起的發熱。而且，由於在遮罩板9與狹縫板7之間設置有間隙G，因此可減小沿著天線2而在遮罩板9及狹縫板7中產生的感應電流，可效率良好地抑制高頻磁場的透射率的降低。 According to the plasma processing device 100 of the present embodiment constructed in this way, by using the shield plate 9 to cover the slit 7x formed in the slit plate 7 from the inner side of the vacuum container 1, the dielectric plate 8 is hidden when observed from the inner side of the vacuum container 1, thereby preventing conductive splashes and the like from adhering to the dielectric plate 8 and causing contamination. In this way, the surface of the dielectric plate 8 can be prevented from being conductive, the reduction in the transmittance of the high-frequency magnetic field can be suppressed, and the heat caused by the flow of the induced current on the surface of the dielectric plate 8 can also be prevented. In addition, since a gap G is provided between the shield plate 9 and the slit plate 7, the induced current generated in the shield plate 9 and the slit plate 7 along the antenna 2 can be reduced, and the reduction in the transmittance of the high-frequency magnetic field can be efficiently suppressed.
另外，由於藉由遮罩板9來覆蓋狹縫板7的狹縫7x，因此自狹縫7x露出的介電板8不會直接暴露於電漿或被處理物中，因此可抑制由輻射等引起的介電板8的溫度上升，從而可防止破損。 In addition, since the slit 7x of the slit plate 7 is covered by the mask plate 9, the dielectric plate 8 exposed from the slit 7x will not be directly exposed to the plasma or the processed object, so the temperature rise of the dielectric plate 8 caused by radiation, etc. can be suppressed, thereby preventing damage.
藉由在遮罩板9形成多個狹縫9x，可使高頻磁場效率良好地透射至真空容器1的內側。進而，由於以與天線2交叉的方式形成多個狹縫9x，因此可減小沿著天線2在遮罩板9中流動的感應電流。藉此，可抑制遮罩板9中的高頻磁場的透射率的降低，而且可抑制遮罩板9的溫度上升及由伴隨於此的輻射引起的介電板8的溫度上升。 By forming a plurality of slits 9x in the shield plate 9, the high-frequency magnetic field can be efficiently transmitted to the inner side of the vacuum container 1. Furthermore, since the plurality of slits 9x are formed in a manner intersecting with the antenna 2, the induced current flowing in the shield plate 9 along the antenna 2 can be reduced. In this way, the reduction in the transmittance of the high-frequency magnetic field in the shield plate 9 can be suppressed, and the temperature rise of the shield plate 9 and the temperature rise of the dielectric plate 8 caused by the radiation accompanying it can be suppressed.
<其他變形實施方式> <Other variant implementation methods>
再者，本發明並不限於所述實施方式。 Furthermore, the present invention is not limited to the above-described implementation methods.
例如，如圖6及圖7所示，其他實施方式的電漿處理裝置100可包括多個(兩個以上)的遮罩板9，所述多個遮罩板9沿著其厚度方向相互隔開間隙G'，藉由所述多個遮罩板9來覆蓋 形成於狹縫板7的狹縫7x。在該情形時，只要使各遮罩板9中的樑狀區域9z的寬度均較狹縫板7的狹縫7x的寬度窄，並且將各遮罩板9中的樑狀區域9z形成於沿著天線2的長邊方向相互錯開的位置即可。在該情形時，各遮罩板9中的樑狀區域9z的寬度可相互相等，亦可不同。另外，各遮罩板9中的樑狀區域9z自厚度方向觀察時可相互重疊，亦可不重疊。另外，各遮罩板9間的間隙G'的大小並無特別限定，例如較佳為5mm以下。 For example, as shown in FIG. 6 and FIG. 7 , the plasma processing device 100 of another embodiment may include a plurality of (more than two) shield plates 9, the plurality of shield plates 9 being spaced apart from each other by a gap G' along the thickness direction thereof, and the plurality of shield plates 9 being used to cover the slit 7x formed in the slit plate 7. In this case, it is sufficient to make the width of the beam-shaped region 9z in each shield plate 9 narrower than the width of the slit 7x of the slit plate 7, and to form the beam-shaped region 9z in each shield plate 9 at mutually staggered positions along the long side direction of the antenna 2. In this case, the widths of the beam-shaped regions 9z in each shield plate 9 may be equal to or different from each other. In addition, the beam-shaped regions 9z in each shielding plate 9 may or may not overlap each other when viewed from the thickness direction. In addition, the size of the gap G' between each shielding plate 9 is not particularly limited, for example, it is preferably less than 5 mm.
另外，在另一實施方式的電漿處理裝置100中，亦可在狹縫板7與遮罩板9的間隙G內設置有遮蔽壁SW，所述遮蔽壁SW對沿著天線2的長邊方向運動的帶電粒子進行遮蔽。該遮蔽壁SW可具有形成為與天線2的長邊方向交叉(具體而言為正交)的壁面。自天線2的長邊方向觀察時，遮蔽壁SW可形成為將間隙G的全部或一部分遮蔽。並且，該遮蔽壁SW可沿著天線2的長邊方向設置多個。多個遮蔽壁SW較佳為相互平行，且沿著天線2的長邊方向以一定的間隔(間距)設置。沿著天線2的長邊方向的多個遮蔽壁SW間的間隔(間距)可與狹縫板7的狹縫7x間的間隔相等，亦可不同。 In addition, in another embodiment of the plasma processing device 100, a shielding wall SW may be provided in the gap G between the slit plate 7 and the shielding plate 9, and the shielding wall SW shields the charged particles moving along the long side direction of the antenna 2. The shielding wall SW may have a wall surface formed to intersect (specifically, be orthogonal to) the long side direction of the antenna 2. When observed from the long side direction of the antenna 2, the shielding wall SW may be formed to shield all or part of the gap G. Furthermore, a plurality of shielding walls SW may be provided along the long side direction of the antenna 2. The plurality of shielding walls SW are preferably parallel to each other and provided at certain intervals (spacing) along the long side direction of the antenna 2. The spacing (distance) between the multiple shielding walls SW along the long side direction of the antenna 2 can be equal to or different from the spacing between the slits 7x of the slit plate 7.
具體而言，例如如圖8所示，亦可在狹縫板7的向內面72形成有朝向遮罩板9的向外面91向間隙G內突出的突出部7p，由該突出部7p構成遮蔽壁SW。另外，如圖9所示，亦可在遮罩板9的向外面91形成有朝向狹縫板7的向內面72向間隙G內突出的突出部9p，由該突出部9p構成遮蔽壁SW。 Specifically, for example, as shown in FIG8 , a protrusion 7p that protrudes toward the outer surface 91 of the shield plate 9 and into the gap G may be formed on the inner surface 72 of the slit plate 7, and the shielding wall SW is formed by the protrusion 7p. In addition, as shown in FIG9 , a protrusion 9p that protrudes toward the inner surface 72 of the slit plate 7 and into the gap G may be formed on the outer surface 91 of the shield plate 9, and the shielding wall SW is formed by the protrusion 9p.
另外，在所述實施方式中，遮罩板9連接於狹縫板7的向內面72，但並不限於此。在其他實施方式中，遮罩板9可安裝於形成有開口1x的真空容器1的側壁1a、或者設置成介於側壁1a與狹縫板7之間的凸緣構件。 In addition, in the embodiment described above, the shielding plate 9 is connected to the inward surface 72 of the slit plate 7, but is not limited thereto. In other embodiments, the shielding plate 9 may be mounted on the side wall 1a of the vacuum container 1 having the opening 1x, or may be provided as a flange member between the side wall 1a and the slit plate 7.
除此以外，本發明並不限於所述實施方式，當然能夠在不脫離其主旨的範圍內進行各種變形。 In addition, the present invention is not limited to the above-described implementation method, and various modifications can be made without departing from the scope of its main purpose.
[工業上的可利用性] [Industrial Availability]
於在真空容器的外部配置天線，將介電板與狹縫板重疊而構成磁場透射窗的電漿處理裝置中，防止介電板的污染並抑制高頻磁場的透射率的降低及由感應電流引起的發熱，並且抑制由電漿引起的介電板的溫度上升。 In a plasma processing device in which an antenna is arranged outside a vacuum container and a dielectric plate and a slit plate are overlapped to form a magnetic field transmission window, contamination of the dielectric plate is prevented, a decrease in the transmittance of a high-frequency magnetic field and heat generation caused by an induced current are suppressed, and a temperature rise of the dielectric plate caused by plasma is suppressed.
1:真空容器 1: Vacuum container
1a:上壁 1a: Upper wall
1x:開口 1x: Open
2:天線 2: Antenna
3:高頻電源 3: High frequency power supply
4:真空排氣裝置 4: Vacuum exhaust device
5:基板保持器 5: Substrate holder
6:偏壓電源 6: Bias power supply
7:狹縫板 7: Slit board
7c:流路 7c: Flow path
7x:狹縫 7x: Narrow seam
8:介電板 8: Dielectric board
9:遮罩板 9: Mask board
11:氣體導入口 11: Gas inlet
31:整合電路 31: Integrated circuit
51:加熱器 51: Heater
71、91:向外面 71, 91: outwards
72:向內面 72: Inward
100:電漿處理裝置 100: Plasma treatment device
IR:高頻電流 IR: High frequency current
O:基板 O: Substrate
P:感應耦合型電漿 P: Inductively coupled plasma
S:密封構件 S: Sealing components
W:磁場透射窗 W: Magnetic field transmission window
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022004886A JP2023104093A (en) | 2022-01-17 | 2022-01-17 | Plasma processing apparatus |
| JP2022-004886 | 2022-01-17 |
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| TW202331784A TW202331784A (en) | 2023-08-01 |
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| KR (1) | KR20240095371A (en) |
| CN (1) | CN118235526A (en) |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201606845A (en) * | 2014-05-12 | 2016-02-16 | Tokyo Electron Ltd | Plasma treatment device and exhaust structure thereof |
| TW201717710A (en) * | 2015-07-22 | 2017-05-16 | Tokyo Electron Ltd | Plasma processing device which is provided with plasma resistance and has a light-weight metal window |
| US20200058467A1 (en) * | 2009-10-27 | 2020-02-20 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2021052170A (en) * | 2019-09-17 | 2021-04-01 | 東京エレクトロン株式会社 | Plasma processing device |
| JP2021168276A (en) * | 2020-04-13 | 2021-10-21 | 日新電機株式会社 | Plasma source and plasma processing apparatus |
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| JP7403052B2 (en) * | 2020-01-27 | 2023-12-22 | 日新電機株式会社 | Plasma source and plasma processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200058467A1 (en) * | 2009-10-27 | 2020-02-20 | Tokyo Electron Limited | Plasma processing apparatus |
| TW201606845A (en) * | 2014-05-12 | 2016-02-16 | Tokyo Electron Ltd | Plasma treatment device and exhaust structure thereof |
| TW201717710A (en) * | 2015-07-22 | 2017-05-16 | Tokyo Electron Ltd | Plasma processing device which is provided with plasma resistance and has a light-weight metal window |
| JP2021052170A (en) * | 2019-09-17 | 2021-04-01 | 東京エレクトロン株式会社 | Plasma processing device |
| JP2021168276A (en) * | 2020-04-13 | 2021-10-21 | 日新電機株式会社 | Plasma source and plasma processing apparatus |
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| KR20240095371A (en) | 2024-06-25 |
| CN118235526A (en) | 2024-06-21 |
| TW202331784A (en) | 2023-08-01 |
| WO2023136008A1 (en) | 2023-07-20 |
| JP2023104093A (en) | 2023-07-28 |
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