TWI840450B - Shower heads and gas handling devices - Google Patents

Shower heads and gas handling devices Download PDF

Info

Publication number
TWI840450B
TWI840450B TW108141737A TW108141737A TWI840450B TW I840450 B TWI840450 B TW I840450B TW 108141737 A TW108141737 A TW 108141737A TW 108141737 A TW108141737 A TW 108141737A TW I840450 B TWI840450 B TW I840450B
Authority
TW
Taiwan
Prior art keywords
corrosion
gas
substrate
diffusion space
gas diffusion
Prior art date
Application number
TW108141737A
Other languages
Chinese (zh)
Other versions
TW202034364A (en
Inventor
田中孝幸
杉山正樹
島村貴春
大森貴史
南雅人
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202034364A publication Critical patent/TW202034364A/en
Application granted granted Critical
Publication of TWI840450B publication Critical patent/TWI840450B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

[課題]提供即使使用高腐蝕性之處理氣體亦可以抑制腐蝕之噴淋頭及氣體處理裝置。 [解決手段]一種噴淋頭,其係在對基板施予氣體處理之氣體處理裝置中,對配置基板之腔室內,供給腐蝕性之處理氣體,該噴淋頭具備:基座構件;噴淋板,其係具有吐出處理氣體之複數氣體吐出孔;氣體擴散空間,其係被設置在基座構件和噴淋板之間之一部分,導入處理氣體,與複數氣體吐出孔連通,基座構件及噴淋板係基材由金屬構成,基座構件之面對於氣體擴散空間的部分,以及噴淋板之面對於氣體擴散空間及氣體吐出孔之部分被耐蝕性金屬材或耐蝕性皮膜覆蓋。[Topic] Provide a shower head and gas treatment device that can suppress corrosion even when using highly corrosive process gases. [Solution] A shower head supplies a corrosive treatment gas to a chamber in which a substrate is arranged in a gas treatment device for applying gas treatment to a substrate. The shower head comprises: a base member; a spray plate having a plurality of gas discharge holes for discharging the treatment gas; a gas diffusion space which is a portion disposed between the base member and the spray plate, into which the treatment gas is introduced and which is connected to the plurality of gas discharge holes. The base member and the spray plate are substrates made of metal, and a portion of the base member facing the gas diffusion space and a portion of the spray plate facing the gas diffusion space and the gas discharge holes are covered with a corrosion-resistant metal material or a corrosion-resistant film.

Description

噴淋頭及氣體處理裝置Shower heads and gas handling devices

本揭示係關於噴淋頭及氣體處理裝置。The present disclosure relates to showerheads and gas handling devices.

在液晶顯示裝置(LCD)等之平面面板顯示器(FPD)製造工程中,存在對矩形狀之玻璃基板之特定膜進行電漿蝕刻等之電漿處理的工程。作為如此之電漿處理裝置,具有如可以取得高真空度且高密度之電漿的大優點的感應耦合電漿(Inductively Coupled Plasma:ICP)處理裝置受到注目。In the manufacturing process of flat panel displays (FPD) such as liquid crystal display devices (LCD), there is a process of plasma processing such as plasma etching of a specific film on a rectangular glass substrate. As such a plasma processing device, an inductively coupled plasma (ICP) processing device has attracted attention because of its great advantages such as being able to obtain high vacuum and high density plasma.

以往之感應耦合電漿處理裝置係與被處理基板對應之矩形狀的介電質窗介於高頻天線和處理室之間,但是隨著基板之大型化,近來提案有使用金屬窗之感應耦合電漿處理裝置(專利文獻1)。在專利文獻1中,藉由分割矩形狀之金屬窗,絕緣被分割之金屬窗彼此,構成處理室之天壁,使構成金屬窗之複數分割片持有吐出氣體之噴淋頭的功能,而將處理氣體導入至腔室內。藉由如此之裝置,進行電漿蝕刻之情況,使用Cl2 氣體般之腐蝕性高的氣體。 [先前技術文獻] [專利文獻]In the past, an inductively coupled plasma processing device had a rectangular dielectric window corresponding to the substrate to be processed between the high-frequency antenna and the processing chamber. However, as the size of the substrate increases, an inductively coupled plasma processing device using a metal window has recently been proposed (Patent Document 1). In Patent Document 1, the rectangular metal window is divided and insulated from each other to form the ceiling of the processing chamber. The multiple divided pieces constituting the metal window function as a showerhead for discharging gas, and the processing gas is introduced into the chamber. When such a device is used for plasma etching, a highly corrosive gas such as Cl2 gas is used. [Prior Technical Document] [Patent Document]

[專利文獻1]日本特開2016-225018號公報[Patent Document 1] Japanese Patent Application Publication No. 2016-225018

[發明所欲解決之問題][The problem the invention is trying to solve]

本揭示提供即使使用高腐蝕性之處理氣體亦可以抑制腐蝕之噴淋頭及氣體處理裝置。 [解決問題之技術手段]The present disclosure provides a shower head and a gas treatment device that can suppress corrosion even when using highly corrosive treatment gas. [Technical means to solve the problem]

與本揭示之一態樣有關之噴淋頭係在對基板施予氣體處理之氣體處理裝置中,對配置基板之腔室內,供給腐蝕性之處理氣體,該噴淋頭具備:基座構件;噴淋板,其係具有吐出處理氣體之複數氣體吐出孔;及氣體擴散空間,其係被設置在上述基座構件和上述噴淋板之間之一部分,導入上述處理氣體,與上述複數氣體吐出孔連通,上述基座構件及上述噴淋板係基材由金屬構成,上述基座構件之面對於上述氣體擴散空間的部分,以及上述噴淋板之面對於上述氣體擴散空間及上述氣體吐出孔之部分被耐蝕性金屬材或耐蝕性皮膜覆蓋。 [發明之效果]A shower head related to one aspect of the present disclosure is a gas treatment device for applying gas treatment to a substrate, and supplies a corrosive treatment gas to a chamber in which the substrate is arranged. The shower head comprises: a base member; a shower plate having a plurality of gas discharge holes for discharging the treatment gas; and a gas diffusion space, which is a portion disposed between the base member and the shower plate, into which the treatment gas is introduced and which is connected to the plurality of gas discharge holes. The base member and the shower plate are substrates made of metal, and a portion of the base member facing the gas diffusion space and a portion of the shower plate facing the gas diffusion space and the gas discharge holes are covered with a corrosion-resistant metal material or a corrosion-resistant film. [Effect of the invention]

若藉由本揭示時,提供即使使用高腐蝕性之處理氣體亦可以抑制腐蝕之噴淋頭及氣體處理裝置。According to the present disclosure, a shower head and a gas treatment device are provided which can suppress corrosion even when using highly corrosive treatment gas.

以下,參照附件圖面針對實施型態予以說明。 [電漿處理裝置] 首先,針對適用與一實施型態有關之噴淋頭的電漿處理裝置進行說明。圖1為表示適用一實施型態所涉及之噴淋頭之電漿處理裝置之一例的剖面圖。The following is a description of the embodiment with reference to the attached drawings. [Plasma treatment device] First, a plasma treatment device for a shower head applicable to an embodiment is described. FIG1 is a cross-sectional view showing an example of a plasma treatment device for a shower head applicable to an embodiment.

圖1所示之電漿處理裝置係作為感應耦合電漿處理裝置而被構成,可以適合使用於在矩形基板,例如FPD用玻璃基板上形成薄膜電晶體之時的金屬膜之蝕刻。The plasma processing apparatus shown in FIG. 1 is constructed as an inductively coupled plasma processing apparatus and can be suitably used for etching a metal film when forming a thin film transistor on a rectangular substrate, for example, a glass substrate for FPD.

該感應耦合電漿處理裝置具有由導電性材料,例如內壁面被陽極氧化處理之由鋁所構成之角筒形狀之氣密的本體容器1。該本體容器1被組裝成可分解,藉由接地線1a被電性接地。The inductively coupled plasma processing device has an airtight main body container 1 made of a conductive material, such as aluminum whose inner wall surface is anodized and has a square tube shape. The main body container 1 is assembled to be decomposable and is electrically grounded via a grounding wire 1a.

本體容器1藉由與本體容器1絕緣而形成的矩形狀之噴淋頭2被區劃成上下,上側成為區劃天線室之天線容器3,下側成為區劃處理室之腔室(處理容器)4。噴淋頭2當作金屬窗發揮功能,構成腔室4之天壁。The main body container 1 is divided into upper and lower parts by a rectangular shower head 2 insulated from the main body container 1. The upper part becomes an antenna container 3 for dividing the antenna room, and the lower part becomes a chamber (processing container) 4 for dividing the processing room. The shower head 2 functions as a metal window and constitutes the ceiling of the chamber 4.

在天線容器3之側壁3a和腔室4之側壁4a之間,設置有朝至本體容器1之內側突出的支持棚架5,及支持樑6。支持棚架5及支持樑6係由導電性材料構成,以鋁等之金屬為佳。噴淋頭2係經由絕緣構件7被分割成複數而構成。而且,被分割成複數之噴淋頭2之分割部分經由絕緣構件7被支持於支持棚架5及支持樑6。支持樑6成為藉由複數根之吊桿(無圖示),被吊在本體容器1之頂棚的狀態。另外,即使藉由複數根之吊桿(無圖示)從本體容器1之頂棚懸吊噴淋頭2,以取代設置支持樑6亦可。A support frame 5 and a support beam 6 protruding toward the inner side of the main body container 1 are provided between the side wall 3a of the antenna container 3 and the side wall 4a of the chamber 4. The support frame 5 and the support beam 6 are made of a conductive material, preferably a metal such as aluminum. The shower head 2 is divided into a plurality of parts via an insulating member 7. Moreover, the divided parts of the shower head 2 are supported by the support frame 5 and the support beam 6 via the insulating member 7. The support beam 6 is suspended from the ceiling of the main body container 1 by a plurality of hanging rods (not shown). In addition, the shower head 2 may be suspended from the ceiling of the main body container 1 by a plurality of hanging rods (not shown) instead of providing the support beam 6.

成為金屬窗之噴淋頭2之各分割部50如後述般,基材由非磁性體之金屬構成,具有基座構件52、具有複數氣體吐出孔54之噴淋板53,和基座構件52和噴淋板53之間之一部分的箱型氣體擴散空間51。在基座構件52之中央部具有凹部,基座構件52之凹部之外側部分和噴淋板53被螺絲固定,被基座構件52之凹部和噴淋板53包圍之區域成為氣體擴散空間51。在氣體擴散空間51,從處理氣體供給機構20經由氣體供給管21導入處理氣體。氣體擴散空間51與複數氣體吐出孔54連通,處理氣體從氣體擴散空間51經由複數氣體吐出孔54被吐出。As described later, each division part 50 of the shower head 2 serving as a metal window has a base member 52, a shower plate 53 having a plurality of gas ejection holes 54, and a box-shaped gas diffusion space 51 in a portion between the base member 52 and the shower plate 53. A concave portion is provided in the center of the base member 52, and the outer side portion of the concave portion of the base member 52 and the shower plate 53 are fixed by screws, and the area surrounded by the concave portion of the base member 52 and the shower plate 53 serves as the gas diffusion space 51. In the gas diffusion space 51, the process gas is introduced from the process gas supply mechanism 20 through the gas supply pipe 21. The gas diffusion space 51 is communicated with a plurality of gas discharge holes 54 , and the processing gas is discharged from the gas diffusion space 51 through the plurality of gas discharge holes 54 .

在噴淋頭2之上方的天線容器3內,以面對於噴淋頭2之與腔室4側相反側之面之方式,配置高頻天線13。高頻天線13係由導電性材料,例如銅等構成,被配置成藉由由絕緣構件構成之間隔物(無圖示)從噴淋頭2間隔開,在與矩形狀之噴淋頭2對應之面內,被形成例如漩渦狀。再者,即使被形成環狀亦可,天線即使為一根亦可即使為複數根亦可。A high frequency antenna 13 is arranged in the antenna container 3 above the shower head 2 so as to face the surface of the shower head 2 opposite to the chamber 4. The high frequency antenna 13 is made of a conductive material such as copper, and is arranged to be separated from the shower head 2 by a spacer (not shown) made of an insulating member, and is formed into, for example, a spiral shape in the surface corresponding to the rectangular shower head 2. Furthermore, it may be formed into a ring shape, and the antenna may be one or more.

在各高頻天線13,經由供電線16、匹配部17連接有第1高頻電源18。而且,在電漿處理之間,例如13.56MHz之高頻電力經由從第1高頻電源18延伸之供電線16而被供給至高頻天線13。依此,如後述般,經由被作為金屬窗發揮功能之噴淋頭2激起的循環電流,在腔室4內形成感應電場。而且,藉由該感應電場,在腔室4內之噴淋頭2正下方之電漿生成空間S,從噴淋頭2被供給之處理氣體被電漿化,生成感應耦合電漿。即是,高頻天線13及第1高頻電源18作為電漿生成機構而發揮功能。Each high frequency antenna 13 is connected to a first high frequency power source 18 via a power supply line 16 and a matching unit 17. During plasma processing, for example, high frequency power of 13.56 MHz is supplied to the high frequency antenna 13 via the power supply line 16 extending from the first high frequency power source 18. Accordingly, as described later, a circulating current excited by the shower head 2 functioning as a metal window forms an induced electric field in the chamber 4. Furthermore, by the induced electric field, the processing gas supplied from the shower head 2 is plasmatized in the plasma generating space S directly below the shower head 2 in the chamber 4, generating inductively coupled plasma. That is, the high frequency antenna 13 and the first high frequency power source 18 function as a plasma generating mechanism.

在腔室4內之底部,以夾著噴淋頭2而與高頻天線13對向之方式,用以載置作為被處理基板的矩形狀之FPD用玻璃基板(以下單記載為基板)G的載置台23經由絕緣體構件24被固定。載置台23係由導電性材料,例如表面被陽極氧化處理之鋁所構成。被載置於載置台23之基板G係藉由靜電夾具(無圖式)被吸附保持。At the bottom of the chamber 4, a mounting table 23 for mounting a rectangular FPD glass substrate (hereinafter simply referred to as a substrate) G as a substrate to be processed is fixed via an insulating member 24 in a manner that sandwiches the shower head 2 and faces the high-frequency antenna 13. The mounting table 23 is made of a conductive material, such as aluminum with an anodized surface. The substrate G mounted on the mounting table 23 is held by adsorption by an electrostatic fixture (not shown).

在載置台23之上部周緣部設置絕緣性之屏蔽環25a,在載置台23之周面設置有絕緣環25b。在載置台23,經本體容器1之底壁、絕緣體構件24被插通用以搬入搬出基板G之升降銷26。升降銷26係藉由被設置在本體容器1外之升降機構(無圖示)而升降驅動來進行基板G之搬入搬出。An insulating shielding ring 25a is provided on the upper peripheral portion of the mounting table 23, and an insulating ring 25b is provided on the peripheral surface of the mounting table 23. In the mounting table 23, a lifting pin 26 for carrying in and out the substrate G is inserted through the bottom wall of the main container 1 and the insulating member 24. The lifting pin 26 is lifted and driven by a lifting mechanism (not shown) provided outside the main container 1 to carry in and out the substrate G.

本體容器1外,設置匹配器28及第2高頻電源29,在載置台23藉由供電線28a經由匹配器28連接有第2高頻電源29。該第2高頻電源29係在電漿處理中,對載置台23施加偏壓用之高頻電力,例如頻率為3.2MHz之高頻電力。藉由該偏壓用之高頻電力被生成的自偏壓,在腔室4內之電漿中之離子有效地被引入基板G。A matching device 28 and a second high-frequency power source 29 are provided outside the main body container 1. The second high-frequency power source 29 is connected to the mounting table 23 through the matching device 28 via a power supply line 28a. The second high-frequency power source 29 applies a high-frequency power for biasing the mounting table 23 during plasma processing, for example, a high-frequency power with a frequency of 3.2 MHz. The ions in the plasma in the chamber 4 are effectively introduced into the substrate G by the self-bias generated by the high-frequency power for biasing.

並且,在載置台23內設置有用以控制基板G之溫度,由加熱器等之加熱手段或冷媒流路等構成之溫度控制機構,和溫度感測器(任一者皆無圖式)。相對於該些機構或構件的配管或配線,皆通過被設置在本體容器1之底面及絕緣體構件24之開口部1b而被導出至本體容器1外。Furthermore, a temperature control mechanism composed of a heating means such as a heater or a cooling medium flow path, and a temperature sensor (neither of which is shown in the figure) are provided in the mounting table 23 to control the temperature of the substrate G. The pipes or wiring corresponding to these mechanisms or components are all led out of the main body container 1 through the opening 1b provided on the bottom surface of the main body container 1 and the insulating member 24.

在腔室4之側壁4a,設置用以搬入搬出基板G之搬入搬出口27a,及開關此之閘閥27。再者,在腔室4之底部經排氣管31連接包含真空泵等之排氣裝置30。藉由該排氣裝置30,腔室4被排氣,在電漿處理中,腔室4內被設定、維持在特定之真空環境(例如1.33Pa)。The side wall 4a of the chamber 4 is provided with a loading and unloading port 27a for loading and unloading the substrate G, and a gate valve 27 for opening and closing the port. Furthermore, an exhaust device 30 including a vacuum pump is connected to the bottom of the chamber 4 through an exhaust pipe 31. The chamber 4 is exhausted by the exhaust device 30, and during the plasma treatment, the chamber 4 is set and maintained in a specific vacuum environment (e.g., 1.33 Pa).

在被載置於載置台23之基板G之背面側,形成有冷卻空間(無圖式),設置有用以供給當作一定壓力之熱傳達用氣體之He氣體的He氣體流路41。如此一來,藉由將熱傳達用氣體供給至基板G之背面側,可以在真空下抑制基板G之電漿處理所致的溫度上升或溫度變化。A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 41 is provided for supplying He gas as a heat transfer gas at a certain pressure. In this way, by supplying the heat transfer gas to the back side of the substrate G, the temperature rise or temperature change caused by the plasma treatment of the substrate G can be suppressed under vacuum.

該感應耦合電漿處理裝置進一步具有控制部100。控制部100由電腦構成,具有由控制電漿處理裝置之各構成部的CPU構成的主控制部、輸入裝置、輸出裝置、顯示裝置和記憶裝置。在記憶裝置記憶在電漿處理裝置被實行之各種處理之參數,再者,設定儲存有用以控制在電漿處理裝置被實行的處理之程式,即是處理配方的記憶媒體。主控制部係以叫出被記憶於記憶媒體之特定處理配方,根據其處理配方使電漿處理裝置實行特定處理之方式進行控制。The inductively coupled plasma processing device further has a control unit 100. The control unit 100 is composed of a computer, and has a main control unit composed of a CPU that controls each component of the plasma processing device, an input device, an output device, a display device, and a memory device. The memory device stores parameters of various processes performed in the plasma processing device, and further, a memory medium is set to store a program for controlling the processes performed in the plasma processing device, that is, a process recipe. The main control unit controls the plasma processing device by calling out a specific process recipe stored in the memory medium and causing the plasma processing device to perform a specific process according to the process recipe.

[噴淋頭] 接著,針對與一實施型態所涉及之噴淋頭2予以詳細說明。 感應耦合電漿藉由在高頻天線流通高頻電流,在其周圍產生磁場,利用藉由其磁場所激起的感應電場產生高頻放電,依此生成的電漿。使用一片金屬窗作為腔室4之天壁之情況,在被設置成在面內被圍繞在圓周方向的高頻天線13中,因渦電流及磁場不到達至金屬窗之背面側,即是腔室4側,故不生成電漿。因此,在本實施型態中,設為以藉由在高頻天線13流通的高頻電流產生的磁場及渦電流到達至腔室4側之方式,以絕緣構件7將作為金屬窗發揮功能之噴淋頭2分割成複數的構造。[Shower head] Next, a detailed description is given of the shower head 2 involved in one embodiment. Inductively coupled plasma generates plasma by passing a high-frequency current through a high-frequency antenna, generating a magnetic field around it, and generating high-frequency discharge using the induced electric field excited by the magnetic field. In the case of using a metal window as the wall of the chamber 4, in the high-frequency antenna 13 that is arranged to be surrounded in a circumferential direction within a plane, the eddy current and the magnetic field do not reach the back side of the metal window, that is, the side of the chamber 4, so plasma is not generated. Therefore, in this embodiment, the shower head 2 functioning as a metal window is divided into a plurality of parts by the insulating member 7 in such a manner that the magnetic field and eddy current generated by the high-frequency current flowing through the high-frequency antenna 13 reach the chamber 4 side.

噴淋頭2之分割部50係基座構件52之基材及噴淋板53之基材由非磁性之金屬構成,至少基座構件52之基材由例如鋁(或含鋁合金)構成。基座構件52和噴淋板53之間被密封構件(在圖1中無圖示)密封。The partition 50 of the shower head 2 is composed of a base member 52 and a base member of a shower plate 53 made of non-magnetic metal, and at least the base member 52 is made of, for example, aluminum (or an aluminum alloy). The base member 52 and the shower plate 53 are sealed by a sealing member (not shown in FIG. 1 ).

與噴淋頭2之處理氣體接觸的部分,即是分割部50之基座構件52之面對於氣體擴散空間51之部分,以及噴淋板53之面對於氣體擴散空間51及氣體吐出孔54之部分,被即使被具備即使與被導入至氣體擴散空間51之處理氣體接觸亦不腐蝕之程度之腐蝕性的耐蝕性金屬材或耐腐蝕性皮膜覆蓋。再者,密封構件係被設置成處理氣體不與基座構件52之基材及噴淋板53之基材直接接觸。 以下,針對噴淋頭2(分割部50)之幾個具體例予以說明。The portion of the shower head 2 that contacts the processing gas, that is, the portion of the base member 52 of the partition 50 facing the gas diffusion space 51, and the portion of the shower plate 53 facing the gas diffusion space 51 and the gas discharge hole 54, is covered with a corrosion-resistant metal material or a corrosion-resistant film having a degree of corrosion resistance that does not corrode even when in contact with the processing gas introduced into the gas diffusion space 51. Furthermore, the sealing member is arranged so that the processing gas does not directly contact the base material of the base member 52 and the base material of the shower plate 53. Below, several specific examples of the shower head 2 (partition 50) are described.

[第1例] 圖2為表示噴淋頭2(分割部50)之第1例的剖面圖。在本例中,基座構件52之基材61及噴淋板53之基材71皆為鋁製。作為鋁材以使用表面被陽極氧化處理者為佳。[First Example] Figure 2 is a cross-sectional view showing the first example of the shower head 2 (dividing portion 50). In this example, the base material 61 of the base member 52 and the base material 71 of the shower plate 53 are both made of aluminum. It is preferable to use an aluminum material whose surface is anodized.

基座構件52具有被設置成在面對於氣體擴散空間51之部分覆蓋基材61的由耐蝕性金屬構成的蓋構件62。蓋構件62構成沿著氣體擴散空間51之箱型形狀。作為構成蓋構件62之耐蝕性金屬,以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。The base member 52 has a cover member 62 made of a corrosion-resistant metal and arranged to cover the base member 61 at a portion facing the gas diffusion space 51. The cover member 62 is formed into a box shape along the gas diffusion space 51. As the corrosion-resistant metal constituting the cover member 62, stainless steel or nickel-based alloys such as Hoechst or nickel-containing metals are preferred. Other corrosion-resistant metals such as titanium can also be used.

噴淋板53具有被設置在面對於氣體吐出孔54之部分的複數套筒72,和被設置在面對於氣體擴散空間51之部分的耐蝕性皮膜73,和被設置在面對於電漿生成空間S之部分的耐電漿性皮膜74。The spray plate 53 has a plurality of sleeves 72 provided at a portion facing the gas discharge hole 54, a corrosion-resistant film 73 provided at a portion facing the gas diffusion space 51, and a plasma-resistant film 74 provided at a portion facing the plasma generation space S.

套筒72被嵌入至基材71,規定氣體吐出孔54。套筒72由耐蝕性金屬或陶瓷構成。作為耐蝕性金屬,以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。作為陶瓷,可以使用氧化鋁、石英等。The sleeve 72 is embedded in the base material 71 to define the gas discharge hole 54. The sleeve 72 is made of corrosion-resistant metal or ceramic. As the corrosion-resistant metal, stainless steel or nickel-based alloys such as Hoechst or nickel-containing metals are preferred. Other corrosion-resistant metals such as titanium can also be used. As ceramics, alumina, quartz, etc. can be used.

氣體吐出孔54具有氣體擴散空間51側之大直徑部,和電漿生成空間S側之小直徑部。使電漿生成空間S側成為小直徑部,係防止電漿從電漿生成空間S進入至氣體吐出孔54的深處之故。The gas discharge hole 54 has a large diameter portion on the gas diffusion space 51 side and a small diameter portion on the plasma generation space S side. The small diameter portion on the plasma generation space S side is used to prevent plasma from entering the plasma generation space S into the depth of the gas discharge hole 54.

耐蝕性皮膜73係由相對於處理氣體具有耐蝕性之材料構成。作為耐蝕性皮膜73,以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳,以氧化鋁(Al2 O3 )熔射皮膜為特佳。作為溶射皮膜,使用浸漬材浸漬者為更佳,作為浸漬材,使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。The corrosion-resistant film 73 is made of a material that is corrosion-resistant to the process gas. A ceramic spray film or Teflon (registered trademark) coating is preferred as the corrosion-resistant film 73, and an alumina (Al 2 O 3 ) spray film is particularly preferred. As the spray film, a film impregnated with an impregnating material is more preferred, and as the impregnating material, a synthetic resin such as acrylic resin, epoxy resin or silicone resin is used.

耐電漿性皮膜74係相對於被生成在電漿空間S之處理氣體之電漿具有耐久性之材料構成。作為耐電漿性皮膜74,以陶瓷熔射皮膜為佳,以耐電漿性高的氧化釔(Y2 O3 )熔射皮膜或Y-Al-Si-O系混合熔射皮膜(氧化釔、氧化鋁及二氧化矽(或是氮化矽)之混合熔射皮膜等之含釔氧化物熔射皮膜為更佳。作為熔射皮膜,以使浸漬材浸漬者為更佳,作為浸漬材,使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。The plasma-resistant film 74 is made of a material that is durable against the plasma of the processing gas generated in the plasma space S. As the plasma-resistant film 74, a ceramic spray film is preferred, and a yttrium oxide spray film such as a yttrium oxide ( Y2O3 ) spray film or a Y-Al-Si-O system mixed spray film (a mixed spray film of yttrium oxide, aluminum oxide and silicon dioxide (or silicon nitride)) having high plasma resistance is more preferred. As a spray film, one that is impregnated with an impregnating material is more preferred, and as an impregnating material, a synthetic resin such as an acrylic resin, an epoxy resin or a silicone resin is used.

基座構件52之基材61和噴淋板53之基材71係以在氣體擴散空間51之外側接觸之方式藉由螺絲被固定,在其接觸部之內側,以密封兩者之間之方式設置有密封構件81。具有在蓋構件62之端部不接觸於噴淋板53之表面的狀態被彎曲的彎曲部62a,彎曲部62a係在以推壓環狀密封構件81之方式接觸的狀態下被設置。彎曲部62a之前端部接觸於基座構件52之表面。密封構件81藉由彎曲部62a被保持。再者,密封構件81接觸於耐蝕性皮膜73。依此,腐蝕性之處理氣體到達至基材61及基材71之氣體擴散空間51之外側部分被阻止。蓋構件62係藉由安裝構件82被安裝於基材61。在安裝構件82和蓋構件62之間設置密封構件89,腐蝕性之處理氣體到達至基材61之情形被阻止。再者,蓋構件62在不接觸於噴淋板53之表面而設置有間隙之狀態下被彎曲。因此,可以抑制在噴淋頭2激起循環電流之時,可以在蓋構件62和基材71之間發生局部放電。並且,抑制由於熱膨脹差等導致蓋構件62和噴淋板53之摩擦引起的微粒產生。The base member 61 of the base member 52 and the base member 71 of the spray plate 53 are fixed by screws in a manner of contacting each other outside the gas diffusion space 51, and a sealing member 81 is provided inside the contact portion in a manner of sealing the two. The cover member 62 has a bent portion 62a that is bent in a state where the end portion does not contact the surface of the spray plate 53, and the bent portion 62a is provided in a state of contacting the annular sealing member 81 in a manner of pressing. The front end portion of the bent portion 62a contacts the surface of the base member 52. The sealing member 81 is retained by the bent portion 62a. Furthermore, the sealing member 81 contacts the corrosion-resistant film 73. Accordingly, the corrosive process gas is prevented from reaching the outer side portion of the gas diffusion space 51 of the substrate 61 and the substrate 71. The cover member 62 is mounted on the substrate 61 by the mounting member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 62, and the corrosive process gas is prevented from reaching the substrate 61. Furthermore, the cover member 62 is bent in a state where a gap is provided without contacting the surface of the spray plate 53. Therefore, it is possible to suppress the occurrence of local discharge between the cover member 62 and the substrate 71 when the circulating current is excited by the spray head 2. In addition, the generation of particles caused by the friction between the cover member 62 and the spray plate 53 due to the difference in thermal expansion is suppressed.

如此一來,可以以比較簡易的構成,使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋,不會使既有的噴淋頭2之構造有太大變化,而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者,由於藉由密封構件81被密封,可以有效果地抑制腐蝕性之處理氣體到達至基座構件52之基材61及噴淋板53之基材71。並且,因密封構件81使用相對於腐蝕性之處理氣體具有耐蝕性之氟橡膠等,故密封構件81之腐蝕也被抑制。In this way, the gas contacting parts facing the gas diffusion space 51 and the gas discharge hole 54 can be covered with corrosion-resistant materials with a relatively simple structure, without greatly changing the structure of the existing shower head 2, and can effectively suppress the corrosion of the shower head 2 to the relatively corrosive process gas. Furthermore, since the sealing member 81 is sealed, the corrosive process gas can be effectively suppressed from reaching the base material 61 of the base member 52 and the base material 71 of the shower plate 53. In addition, since the sealing member 81 uses fluororubber or the like that is corrosion-resistant to the relatively corrosive process gas, the corrosion of the sealing member 81 is also suppressed.

[第2例] 圖3為表示噴淋頭2(分割部50)之第2例的剖面圖。在本例中,基本構造與第1例相同。在本例中,密封構件81非蓋構件62,以構成環狀之耐蝕性固定構件83被保持、固定之點與第1例不同。耐蝕性固定構件83係由PTFE (polytetrafluoroethylene)般之絕緣性之耐蝕性樹脂構成,藉由固定構件84被固定。固定構件84係藉由安裝構件82與蓋構件62一起被安裝於基材61。在安裝構件82和蓋構件62之間設置密封構件89,腐蝕性之處理氣體到達至基材61之情形被阻止。再者,即使在本例中,密封構件81接觸於蓋構件62及耐蝕性皮膜73。因此,本例也可以取得與第1例相同的效果。再者,因以由絕緣性之耐蝕性樹脂構成之耐蝕性固定構件83保持設置在基座構件52和噴淋板53之間的密封構件81,故可以防止在耐蝕性固定構件83和噴淋板53之間產生放電之情形。[Second Example] Figure 3 is a cross-sectional view showing the second example of the shower head 2 (dividing portion 50). In this example, the basic structure is the same as that of the first example. In this example, the sealing member 81 is not the cover member 62, but is held and fixed by the corrosion-resistant fixing member 83 forming a ring, which is different from the first example. The corrosion-resistant fixing member 83 is made of an insulating corrosion-resistant resin such as PTFE (polytetrafluoroethylene) and is fixed by the fixing member 84. The fixing member 84 is installed on the substrate 61 together with the cover member 62 through the mounting member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 62 to prevent the corrosive process gas from reaching the substrate 61. Furthermore, in this example, the sealing member 81 is in contact with the cover member 62 and the corrosion-resistant film 73. Therefore, this example can also obtain the same effect as the first example. Furthermore, since the sealing member 81 disposed between the base member 52 and the spray plate 53 is held by the corrosion-resistant fixing member 83 made of an insulating corrosion-resistant resin, it is possible to prevent discharge from occurring between the corrosion-resistant fixing member 83 and the spray plate 53.

[第3例] 圖4為表示噴淋頭2(分割部50)之第3例的剖面圖。在本例中,噴淋板53與第1例相同,具有基材71、複數套筒72、耐蝕性皮膜73和耐電漿性皮膜74。[Third Example] Figure 4 is a cross-sectional view showing the third example of the shower head 2 (dividing portion 50). In this example, the shower plate 53 is the same as the first example, and has a base material 71, a plurality of sleeves 72, an corrosion-resistant film 73, and a plasma-resistant film 74.

另外,基座構件52具有被形成覆蓋基材61之氣體擴散空間51上面側之面的耐蝕性皮膜63,和被設置成覆蓋基材61之氣體擴散空間51側面側之面的由耐蝕性金屬構成的環狀構件64。In addition, the base member 52 has a corrosion-resistant film 63 formed to cover the upper surface side of the gas diffusion space 51 of the substrate 61, and a ring-shaped member 64 made of a corrosion-resistant metal provided to cover the side surface side of the gas diffusion space 51 of the substrate 61.

作為耐蝕性皮膜63,與上述耐蝕性皮膜73相同,以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳,以氧化鋁熔射皮膜為特佳。作為熔射皮膜,使用使浸漬材浸漬者為更佳,作為浸漬材,使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。As the corrosion-resistant film 63, similar to the corrosion-resistant film 73, a ceramic spray film or Teflon (registered trademark) coating is preferred, and an alumina spray film is particularly preferred. As the spray film, it is more preferred to use a film impregnated with an impregnating material, and as the impregnating material, a synthetic resin such as acrylic resin, epoxy resin or silicone resin is used.

環狀構件64由耐蝕性金屬構成。作為耐蝕性金屬,以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。The ring member 64 is made of a corrosion-resistant metal. Stainless steel, nickel-based alloys such as Hoechst, and nickel-containing metals are preferred as the corrosion-resistant metal. Other corrosion-resistant metals such as titanium may also be used.

在環狀構件64之上面及下面形成環狀溝,在該些溝,分別嵌入密封構件85及86。密封構件85及86分別成為被密接於形成有基座構件52之形成有耐蝕性皮膜63的面,及噴淋板53之形成有耐蝕性皮膜73的面。基座構件52之基材61和噴淋板53之基材71藉由螺絲固定被固定,基座構件52和環狀構件64之間,及環狀構件64和噴淋板53之間藉由密封構件85及86被密封。Annular grooves are formed on the upper and lower surfaces of the annular member 64, and sealing members 85 and 86 are respectively embedded in these grooves. The sealing members 85 and 86 are respectively formed to be closely attached to the surface of the base member 52 formed with the corrosion-resistant film 63 and the surface of the spray plate 53 formed with the corrosion-resistant film 73. The base member 61 of the base member 52 and the base member 71 of the spray plate 53 are fixed by screw fixing, and the base member 52 and the annular member 64, and the annular member 64 and the spray plate 53 are sealed by the sealing members 85 and 86.

如此一來,即使在本例中,亦可以以比較簡易的構成,使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋,不會使既有的噴淋頭2之構造有太大變化,而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者,因密封構件85及86密接於以耐蝕性金屬形成的環狀構件64、耐蝕性皮膜63、73,故腐蝕性之處理氣體從和環狀構件64之間隙到達至基材61及基材71之情形也被阻止。再者,因密封構件85及86使用相對於腐蝕性之處理氣體具有耐蝕性之氟橡膠等,故處理氣體所致的腐蝕也被抑制。Thus, even in this example, the gas contacting parts facing the gas diffusion space 51 and the gas discharge hole 54 can be covered with corrosion-resistant materials with a relatively simple structure, without greatly changing the structure of the existing shower head 2, and can effectively suppress the corrosion of the shower head 2 relative to the corrosive process gas. Furthermore, since the sealing members 85 and 86 are in close contact with the annular member 64 formed of the corrosion-resistant metal and the corrosion-resistant films 63 and 73, the corrosive process gas is prevented from reaching the substrates 61 and 71 from the gap between the sealing members 85 and 86 and the annular member 64. Furthermore, since the sealing members 85 and 86 are made of fluororubber or the like which is resistant to the corrosive process gas, corrosion caused by the process gas is also suppressed.

[第4例] 圖5為表示噴淋頭2(分割部50)之第4例的剖面圖。在本例中,雖然基本構造與第3例相同,但是在基材61之氣體擴散空間51上面側之面,設置與蓋構件62相同的由耐蝕性金屬構成之蓋構件65,以取代第3例之耐蝕性皮膜63之點不同。蓋構件65係藉由安裝構件82被安裝於基材61。在安裝構件82和蓋構件65之間設置密封構件89,腐蝕性之處理氣體到達至基材61之情形被阻止。[Example 4] Figure 5 is a cross-sectional view showing the fourth example of the shower head 2 (dividing portion 50). In this example, although the basic structure is the same as that of the third example, a cover member 65 made of a corrosion-resistant metal similar to the cover member 62 is provided on the upper side of the gas diffusion space 51 of the substrate 61, replacing the corrosion-resistant film 63 of the third example. The cover member 65 is mounted on the substrate 61 by the mounting member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 65, and the corrosive process gas is prevented from reaching the substrate 61.

在本例中,與第3例略相同,面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋,可以取得與第3例相同的效果。In this example, similar to the third example, the gas diffusion space 51 and the gas outlet hole 54 that are in contact with the gas are all covered with corrosion-resistant materials, so that the same effect as the third example can be achieved.

[第5例] 圖6為表示噴淋頭2(分割部50)之第5例的剖面圖。在本例中,設置有第4例之蓋構件65和環狀構件64成為一體的一體構件66者,其他與第4例相同。一體構件66係與圖4之例相同,藉由安裝構件82被安裝於基材61。在安裝構件82和一體構件66之間設置密封構件89,腐蝕性之處理氣體到達至基材61之情形被阻止。[Fifth Example] Figure 6 is a cross-sectional view showing the fifth example of the shower head 2 (dividing portion 50). In this example, an integrated member 66 is provided in which the cover member 65 and the annular member 64 of the fourth example are integrated, and the rest is the same as the fourth example. The integrated member 66 is the same as the example of Figure 4 and is mounted on the substrate 61 by the mounting member 82. A sealing member 89 is provided between the mounting member 82 and the integrated member 66 to prevent the corrosive process gas from reaching the substrate 61.

因此,除了取得與第4例相同之效果之外,可以消除在第4例中存在的處理氣體從蓋構件65和環狀構件64之間隙露出至基座構件52之基材61側之虞。Therefore, in addition to achieving the same effect as in the fourth example, the risk of the process gas leaking from the gap between the cover member 65 and the ring member 64 to the substrate 61 side of the base member 52, which exists in the fourth example, can be eliminated.

[第6例] 圖7為表示噴淋頭2(分割部50)之第6例的剖面圖。在本例中,噴淋板53與第1例相同,具有基材71、複數套筒72、耐蝕性皮膜73和耐電漿性皮膜74。[Sixth Example] Figure 7 is a cross-sectional view showing the sixth example of the shower head 2 (dividing portion 50). In this example, the shower plate 53 is the same as the first example, and has a base material 71, a plurality of sleeves 72, an corrosion-resistant film 73, and a plasma-resistant film 74.

另外,基座構件52在面對於基材61之氣體擴散空間51之部分的全面具有耐蝕性皮膜67。作為耐蝕性皮膜67,與上述耐蝕性皮膜73相同,以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳,以氧化鋁熔射皮膜為特佳。作為溶射皮膜,使用浸漬材浸漬者為更佳,作為浸漬材,使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。In addition, the base member 52 has a corrosion-resistant film 67 on the entire surface of the portion of the gas diffusion space 51 facing the substrate 61. As the corrosion-resistant film 67, similar to the corrosion-resistant film 73, a ceramic spray film or a Teflon (registered trademark) coating is preferred, and an alumina spray film is particularly preferred. As the spray film, it is more preferred to use an impregnation material, and as the impregnation material, a synthetic resin such as an acrylic resin, an epoxy resin, or a silicone resin is used.

再者,在基座構件52之基材61之下面的氣體擴散空間51之外側部分,形成有環狀溝52a。耐蝕性皮膜67係沿著基材61之下面延伸至氣體擴散空間51之外方,也被形成在環狀溝52a內。再者,噴淋板53之耐蝕性皮膜73沿著基材71之上面而延伸至與氣體擴散空間之外方的環狀溝52a對應的部分。Furthermore, an annular groove 52a is formed on the outer side of the gas diffusion space 51 on the lower surface of the substrate 61 of the base member 52. The corrosion-resistant film 67 extends along the lower surface of the substrate 61 to the outside of the gas diffusion space 51 and is also formed in the annular groove 52a. Furthermore, the corrosion-resistant film 73 of the spray plate 53 extends along the upper surface of the substrate 71 to the portion corresponding to the annular groove 52a outside the gas diffusion space.

基座構件52之基材61和噴淋板53之基材71在環狀之密封構件87被插入至環狀溝52a內之狀態被螺絲固定。作為密封構件87,可以使用相對於腐蝕性處理氣體具有腐蝕性之氟橡膠等。The base member 61 of the base member 52 and the base member 71 of the spray plate 53 are screwed and fixed in a state where the annular sealing member 87 is inserted into the annular groove 52a. As the sealing member 87, fluororubber or the like which is corrosive to the corrosive process gas can be used.

如此一來,即使在本例中,亦可以以比較簡易的構成,使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋,不會使既有的噴淋頭2之構造有太大變化,而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者,基座構件52和噴淋板53之接縫之部分,因密封構件87介於耐蝕性皮膜67及73之間,故可以更有效果地抑制腐蝕性之處理氣體所致的腐蝕。Thus, even in this example, the gas contacting parts facing the gas diffusion space 51 and the gas discharge hole 54 can be covered with the corrosion-resistant material with a relatively simple structure, without greatly changing the structure of the existing shower head 2, and can effectively suppress the corrosion of the shower head 2 relative to the corrosive process gas. Furthermore, the joint between the base member 52 and the shower plate 53 can more effectively suppress the corrosion caused by the corrosive process gas because the sealing member 87 is interposed between the corrosion-resistant films 67 and 73.

[第7例] 圖8為表示噴淋頭2(分割部50)之第7例的剖面圖。在本例中,基座構件52與第6例相同,在基材61之面對於氣體擴散空間51之部分的全面具有耐蝕性皮膜67。腐蝕性皮膜67係沿著基材61之下面延伸至氣體擴散空間51之外方。但是,在氣體擴散空間51之周緣部設置傾斜之點,及無形成環狀溝之點與第6例不同。[Seventh Example] Figure 8 is a cross-sectional view of the seventh example of the shower head 2 (dividing portion 50). In this example, the base member 52 is the same as the sixth example, and the entire portion of the base member 61 facing the gas diffusion space 51 has a corrosion-resistant film 67. The corrosion-resistant film 67 extends along the bottom surface of the base member 61 to the outside of the gas diffusion space 51. However, the points where the peripheral portion of the gas diffusion space 51 is inclined and the points where the annular groove is not formed are different from the sixth example.

另外,噴淋板53具有由耐蝕性金屬構成之基材75,在面對於基材75之電漿生成空間S之部分,形成耐電漿性皮膜74。氣體吐出孔54直接被形成在基材75。基材75露出至氣體擴散空間51及氣體吐出孔54。作為構成基材75之耐蝕性金屬,以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。在較噴淋板53之上面之氣體擴散空間51更外側部分,形成環狀溝53a。另外,基座構件52之耐蝕性皮膜67往較環狀溝53a更外側延伸。In addition, the spray plate 53 has a substrate 75 made of a corrosion-resistant metal, and a plasma-resistant film 74 is formed on a portion of the plasma generating space S facing the substrate 75. The gas discharge hole 54 is directly formed on the substrate 75. The substrate 75 is exposed to the gas diffusion space 51 and the gas discharge hole 54. As the corrosion-resistant metal constituting the substrate 75, stainless steel or nickel-based alloys such as Herschel and nickel-containing metals are preferred. Other corrosion-resistant metals such as titanium can also be used. An annular groove 53a is formed on the outer side of the gas diffusion space 51 on the upper side of the spray plate 53. In addition, the corrosion-resistant film 67 of the base member 52 extends to the outer side of the annular groove 53a.

基座構件52之基材61和噴淋板53之基材75在環狀之密封構件88被插入至環狀溝53a內之狀態被螺絲固定。作為密封構件88,可以使用相對於腐蝕性處理氣體具有腐蝕性之氟橡膠等。The base material 61 of the base member 52 and the base material 75 of the spray plate 53 are screwed and fixed in a state where the annular sealing member 88 is inserted into the annular groove 53a. As the sealing member 88, fluororubber or the like which is corrosive to the corrosive process gas can be used.

因基座構件52之體積大,故由於重量限制等,難使用不鏽鋼等之耐蝕性金屬,但是噴淋板53之體積小,故如本例般,能夠以不鏽鋼等之耐蝕性金屬構成除了耐電漿性皮膜74外的部分全體。Since the base member 52 is large in size, it is difficult to use corrosion-resistant metals such as stainless steel due to weight restrictions, etc. However, the spray plate 53 is small in size, so as in this example, the entire body except for the plasma-resistant film 74 can be made of corrosion-resistant metals such as stainless steel.

如此一來,即使在本例中,亦可以以比較簡易的構成,使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋,不會使既有的噴淋頭2之構造有太大變化,而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者,基座構件52和噴淋板53之接縫之部分,藉由由耐蝕性皮膜67及耐蝕性金屬構成之基材75被密封,再者,因密封構件88介於該些之間,故可以更有效果地抑制腐蝕性之處理氣體所致的腐蝕。Thus, even in this example, the gas contacting parts facing the gas diffusion space 51 and the gas discharge hole 54 can be covered with corrosion-resistant materials with a relatively simple structure, without greatly changing the structure of the existing shower head 2, and can effectively suppress the corrosion of the shower head 2 relative to the corrosive process gas. Furthermore, the joint between the base member 52 and the shower plate 53 is sealed by the base material 75 composed of the corrosion-resistant film 67 and the corrosion-resistant metal, and further, because the sealing member 88 is interposed therebetween, the corrosion caused by the corrosive process gas can be more effectively suppressed.

再者,藉由被設置在氣體擴散空間51之周緣部設置傾斜,故氣體擴散室51之側面成為緩和(以剖面看時為鈍角),故例如藉由熔射形成耐蝕性皮膜67之時,可以形成熔射材粒子之附著密度高的緻密膜。Furthermore, by being inclined at the periphery of the gas diffusion space 51, the side surface of the gas diffusion chamber 51 becomes gentle (blunt when viewed in cross section), so that when the corrosion-resistant film 67 is formed by spraying, for example, a dense film with a high adhesion density of the sprayed material particles can be formed.

[第8例] 圖9為表示噴淋頭2(分割部50)之第8例的剖面圖。在本例中,基本構造與第7例相同。在本例中,在基座構件52中,在面對於基材61之氣體擴散空間51之部分的全面,設置由耐蝕性金屬構成之蓋構件68,以取代耐蝕性皮膜67之點與第7例不同。作為耐蝕性金屬,以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。另外,蓋構件68係藉由安裝構件82被安裝於基材61。在安裝構件82和蓋構件68之間設置密封構件89,腐蝕性之處理氣體到達至基材61之情形被阻止。[Example 8] Figure 9 is a cross-sectional view of the shower head 2 (dividing portion 50) of Example 8. In this example, the basic structure is the same as that of Example 7. In this example, in the base member 52, a cover member 68 made of corrosion-resistant metal is provided on the entire portion of the gas diffusion space 51 facing the substrate 61, which is different from Example 7 in that the corrosion-resistant film 67 is replaced by a cover member 68. As the corrosion-resistant metal, nickel-containing metals such as stainless steel or nickel-based alloys such as Herschel are preferred. Other corrosion-resistant metals such as titanium can also be used. In addition, the cover member 68 is mounted on the substrate 61 by the mounting member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 68, and corrosive process gases are prevented from reaching the substrate 61.

在本例中,由於第7例之腐蝕性皮膜67僅置換成由耐蝕性金屬構成之蓋構件68,故可以取得與第7例相同的效果。In this example, since the corrosive film 67 of the seventh example is merely replaced by a cover member 68 made of a corrosion-resistant metal, the same effect as that of the seventh example can be obtained.

(電漿處理裝置之動作) 接著,針對使用如上述般所構成之感應耦合電漿處理裝置而對基板G施予電漿處理例如電漿蝕刻處理之時之處理動作予以說明。(Operation of plasma processing device) Next, the processing operation when the substrate G is subjected to plasma processing, such as plasma etching processing, using the inductively coupled plasma processing device constructed as described above will be described.

首先,在使閘閥27成為開啟之狀態藉由搬運機構(無圖示)將形成有特定膜之基板G從搬入搬出口27a搬入至腔室4內,載置於載置台23之載置面。接著,藉由靜電夾具(無圖示)將基板G固定在載置台23上。而且,邊藉由排氣裝置30對腔室4內進行真空排氣,邊藉由壓力控制閥(無圖示),將腔室4內維持在例如0.66~26.6Pa程度之壓力氛圍。在該狀態下,從處理氣體供給機構20經由氣體供給管21對具有金屬窗之功能的噴淋頭2供給處理氣體,使處理氣體從噴淋頭2噴淋狀地吐出至腔室4內。First, the substrate G formed with a specific film is carried into the chamber 4 from the loading and unloading port 27a by the transport mechanism (not shown) with the gate valve 27 opened, and is placed on the mounting surface of the mounting table 23. Then, the substrate G is fixed on the mounting table 23 by an electrostatic clamp (not shown). Moreover, while the chamber 4 is vacuum-exhausted by the exhaust device 30, the pressure atmosphere in the chamber 4 is maintained at, for example, 0.66 to 26.6 Pa by the pressure control valve (not shown). In this state, the processing gas is supplied from the processing gas supply mechanism 20 through the gas supply pipe 21 to the shower head 2 having the function of a metal window, so that the processing gas is ejected from the shower head 2 into the chamber 4 in a spraying manner.

再者,此時在基板G之背面側之冷卻空間,為了迴避基板G之溫度上升或溫度變化,經He氣體流路41,供給當作熱傳達用氣體之He氣體。Furthermore, at this time, in the cooling space on the back side of the substrate G, in order to avoid the temperature rise or temperature change of the substrate G, He gas serving as heat transfer gas is supplied through the He gas flow path 41.

接著,從第1高頻電源18對高頻天線13施加例如1MHz以上27MHz以下之高頻,依此,經由當作金屬窗發揮功能之噴淋頭2而在腔室4內生成均勻的感應電場。藉由如此所生成之感應電場,在腔室4內處理氣體電漿化,生成高密度之感應耦合電漿。藉由該電漿,對基板G,進行電漿蝕刻處理。Next, a high frequency of, for example, 1 MHz to 27 MHz is applied to the high frequency antenna 13 from the first high frequency power source 18, thereby generating a uniform induced electric field in the chamber 4 through the shower head 2 functioning as a metal window. The induced electric field generated in this way plasmatizes the processing gas in the chamber 4, generating a high-density inductively coupled plasma. The plasma is used to perform plasma etching on the substrate G.

作為處理氣體,雖然自以往使用氟系或氯系之腐蝕性氣體,但是在最近,藉由處理裝置之高溫化等,處理氣體之腐蝕性更增加。判斷出在使用如此之高腐蝕性之處理氣體之情況,即使針對尤其較電漿空間S更上游部分之電漿化之前的階段之接觸部分,也必須進行充分的腐蝕對策。As a processing gas, fluorine or chlorine corrosive gases have been used in the past, but recently, the corrosiveness of the processing gas has increased due to the high temperature of the processing equipment. It is judged that when using such a highly corrosive processing gas, even for the contact part before plasma formation, especially in the upstream part of the plasma space S, sufficient corrosion countermeasures must be taken.

在專利文獻1中,針對在被供給處理氣體之噴淋頭2內部中之防止腐蝕對策並無記載。Patent Document 1 does not describe any measures to prevent corrosion inside the shower head 2 to which the process gas is supplied.

於是,在本實施型態中,以耐蝕性金屬材或耐蝕性皮膜覆蓋接觸於噴淋頭2(分割部50)之處理氣體的部分,即是基座構件52之面對於氣體擴散空間51之部分,以及噴淋板53之面對於氣體擴散空間51及氣體吐出孔54之部分。依此,可以以比較簡易的構成,抑制金屬製之噴淋頭之接觸氣體部分的腐蝕。Therefore, in this embodiment, the portion of the shower head 2 (dividing portion 50) that contacts the processing gas, that is, the portion of the base member 52 facing the gas diffusion space 51, and the portion of the shower plate 53 facing the gas diffusion space 51 and the gas discharge hole 54 are covered with a corrosion-resistant metal material or a corrosion-resistant film. In this way, the corrosion of the portion of the metal shower head that contacts the gas can be suppressed with a relatively simple structure.

具體而言,如上述第1~第8例所示般,基座構件52之面對於氣體擴散空間51之部分,使用由不鏽鋼等之耐蝕性金屬構成之蓋構件62、陶瓷熔射皮膜般之耐蝕性皮膜63、67、由耐蝕性金屬構成之環狀構件64。再者,在噴淋板53之面對於氣體擴散空間51之部分設置耐蝕性皮膜73,在面對於氣體吐出孔54之部分,設置由耐蝕性金屬或陶瓷構成之套筒72, 或由耐蝕性金屬構成噴淋板53之基材71本身。依此,可以有效果地抑制噴淋頭2之高腐蝕性之處理氣體所致的腐蝕。Specifically, as shown in the first to eighth examples, the portion of the base member 52 facing the gas diffusion space 51 uses a cover member 62 made of a corrosion-resistant metal such as stainless steel, corrosion-resistant films 63 and 67 such as ceramic spray films, and a ring member 64 made of a corrosion-resistant metal. Furthermore, a corrosion-resistant film 73 is provided on the portion of the spray plate 53 facing the gas diffusion space 51, and a sleeve 72 made of a corrosion-resistant metal or ceramics, or a base material 71 of the spray plate 53 itself made of a corrosion-resistant metal, is provided on the portion facing the gas discharge hole 54. In this way, corrosion caused by the highly corrosive process gas of the spray head 2 can be effectively suppressed.

再者,因在基座構件52之基材61及噴淋板53之基材71之間,被耐蝕性金屬或耐蝕性皮膜密封,並且被密封構件81、85、86、87、88密封,故處理氣體到達至有腐蝕性可能的金屬部之情形被阻止。Furthermore, since the base member 52 substrate 61 and the spray plate 53 substrate 71 are sealed by corrosion-resistant metal or corrosion-resistant film and sealed by sealing members 81, 85, 86, 87, 88, the process gas is prevented from reaching the potentially corrosive metal parts.

作為耐蝕性皮膜,以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳。尤其,在使用Cl2 氣體等之鹵系的高腐蝕性之處理氣體之情況,以氧化鋁熔射皮膜為佳。再者,熔射皮膜以浸漬材被浸漬者為佳。藉由使浸漬材浸漬,熔射皮膜之氣孔被封孔,可以更有效果地抑制高腐蝕性之處理氣體所致的腐蝕。作為浸漬材,可使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。該些樹脂藉由選擇硬化劑之材料作為主劑,可以使填充性或腐蝕性成為良好,可以更提升封孔所致的腐蝕抑制效果。As the corrosion-resistant film, ceramic spray film or Teflon (registered trademark) coating is preferred. In particular, when using a halogen-based highly corrosive processing gas such as Cl2 gas, an alumina spray film is preferred. Furthermore, the spray film is preferably one in which the impregnated material is impregnated. By impregnating the impregnated material, the pores of the spray film are sealed, and the corrosion caused by the highly corrosive processing gas can be more effectively suppressed. As the impregnated material, a synthetic resin such as acrylic resin, epoxy resin or silicone resin can be used. These resins can improve the filling property or corrosion resistance by selecting the material of the hardener as the main agent, and can further enhance the corrosion inhibition effect caused by sealing.

再者,因在噴淋板53之面對於電漿空間S之面,被相對於處理氣體之電漿具有耐電漿性之耐電漿性皮膜74覆蓋,故處理氣體對電漿之耐性高。作為耐電漿性皮膜74,以陶瓷熔射皮膜為佳,尤其氧化釔(Y2 O3 )熔射皮膜或Y-Al-Si-O系混合熔射皮膜(氧化釔、氧化鋁及二氧化矽(或是氮化矽)之混合熔射皮膜)等之含釔氧化物熔射皮膜為更佳,可以取得更高的耐電漿性。再者,從取得更高的耐電漿性之觀點來看,熔射皮膜以使浸漬材浸漬而予以封孔者為更佳。即使在此情況下,作為含浸材,可以使用使填充性或耐電漿性成為良好之丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。 (其他之適用)Furthermore, since the surface of the spray plate 53 facing the plasma space S is covered with a plasma-resistant film 74 having plasma resistance to the plasma of the process gas, the process gas has high resistance to the plasma. As the plasma-resistant film 74, a ceramic spray film is preferred, and a yttrium oxide spray film such as a yttrium oxide ( Y2O3 ) spray film or a Y-Al-Si-O system mixed spray film (a mixed spray film of yttrium oxide, aluminum oxide and silicon dioxide (or silicon nitride)) is more preferred, which can obtain higher plasma resistance. Furthermore, from the viewpoint of obtaining higher plasma resistance, a spray film that is sealed by impregnation with an impregnating material is more preferred. Even in this case, as the impregnation material, a synthetic resin such as acrylic resin, epoxy resin or silicone resin can be used to improve the filling property and plasma resistance. (Other applicable)

以上,雖然針對實施型態予以說明,但是應理解成此次揭示的實施型態所有的點皆為例示,並非用以限制者。上述實施型態在不脫離附件的申請專利範圍及其主旨的情況下,即使以各種型態進行省略、替換或變更亦可。Although the above is a description of the embodiments, it should be understood that the embodiments disclosed this time are all illustrative and not limiting. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the attached patent application and its gist.

例如,在上述實施型態中,雖然使用感應耦合電漿處理裝置之例,但是不限定於此,若基材為金屬之噴淋頭時,即使為電容耦合電漿處理裝置等之其他電漿處理裝置亦可,即使為不使用電漿之氣體處理亦可。再者,雖然以非磁性之金屬構成基座構件之基材及噴淋板之基材,但是若為感應耦合電漿處理裝置以外時,則不限定於非磁性金屬。For example, in the above-mentioned embodiment, although an inductively coupled plasma processing apparatus is used, it is not limited to this. If the substrate is a metal shower head, other plasma processing apparatuses such as a capacitively coupled plasma processing apparatus may be used, and gas processing without using plasma may also be used. Furthermore, although the substrate of the base member and the substrate of the shower plate are made of non-magnetic metal, if it is other than an inductively coupled plasma processing apparatus, it is not limited to non-magnetic metal.

再者,在上述實施型態中,雖然以蝕刻裝置為例進行說明,但是不限定於此,若為灰化或CVD等之使用腐蝕性高的氣體的氣體處理裝置時則可以適用。Furthermore, in the above-mentioned embodiment, although the etching apparatus is described as an example, the present invention is not limited thereto and can be applied to any gas processing apparatus using a highly corrosive gas such as ashing or CVD.

1:本體容器 2:噴淋頭 3:天線容器 4:腔室 5:支撐棚架 6:支持樑 7:絕緣構件 13:高頻天線 18:第1高頻電源 20:處理氣體供給機構 50:分割部 51:氣體擴散空間 52:基座構件 53:噴淋板 54:氣體吐出孔 61:基材 62,65,68:蓋構件 66:一體構件 63,67:耐蝕性皮膜 64:環狀構件 71,75:基材 72:套筒 73:耐蝕性皮膜 74:耐電漿性皮膜 81,85,86,87,88,89:密封構件 G:基板1: Main body container 2: Sprinkler head 3: Antenna container 4: Chamber 5: Support frame 6: Support beam 7: Insulation member 13: High frequency antenna 18: First high frequency power source 20: Processing gas supply mechanism 50: Divider 51: Gas diffusion space 52: Base member 53: Sprinkler plate 54: Gas outlet hole 61: Base material 62,65,68: Cover member 66: Integrated member 63,67: Corrosion-resistant film 64: Ring member 71,75: Base material 72: Sleeve 73: Corrosion-resistant film 74: Plasma-resistant film 81,85,86,87,88,89: Sealing member G: Substrate

[圖1]為表示適用一實施型態所涉及之噴淋頭之電漿處理裝置之一例的剖面圖。 [圖2]為表示噴淋頭之第1例的剖面圖。 [圖3]為表示噴淋頭之第2例的剖面圖。 [圖4]為表示噴淋頭之第3例的剖面圖。 [圖5]為表示噴淋頭之第4例的剖面圖。 [圖6]為表示噴淋頭之第5例的剖面圖。 [圖7]為表示噴淋頭之第6例的剖面圖。 [圖8]為表示噴淋頭之第7例的剖面圖。 [圖9]為表示噴淋頭之第8例的剖面圖。[FIG. 1] is a cross-sectional view showing an example of a plasma treatment device using a shower head according to an embodiment. [FIG. 2] is a cross-sectional view showing the first example of a shower head. [FIG. 3] is a cross-sectional view showing the second example of a shower head. [FIG. 4] is a cross-sectional view showing the third example of a shower head. [FIG. 5] is a cross-sectional view showing the fourth example of a shower head. [FIG. 6] is a cross-sectional view showing the fifth example of a shower head. [FIG. 7] is a cross-sectional view showing the sixth example of a shower head. [FIG. 8] is a cross-sectional view showing the seventh example of a shower head. [FIG. 9] is a cross-sectional view showing the eighth example of a shower head.

2:噴淋頭 2: Shower head

50:分割部 50: Division

51:氣體擴散空間 51: Gas diffusion space

52:基座構件 52: Base components

53:噴淋板 53:Spray board

54:氣體吐出孔 54: Gas outlet hole

61:基材 61: Base material

62:蓋構件 62: Cover component

62a:彎曲部 62a: bend

71:基材 71: Base material

72:套筒 72: Sleeve

73:耐蝕性皮膜 73: Corrosion-resistant film

74:耐電漿性皮膜 74: Plasma-resistant film

81,89:密封構件 81,89: Sealing components

82:安裝構件 82: Installation components

S:電漿生成空間 S: Plasma generation space

Claims (16)

一種噴淋頭,其係在對基板施予氣體處理之氣體處理裝置中,對配置基板之腔室內,供給腐蝕性之處理氣體,該噴淋頭具備:基座構件;噴淋板,其係具有吐出處理氣體之複數氣體吐出孔;氣體擴散空間,其係被設置在上述基座構件和上述噴淋板之間之一部分,導入上述處理氣體,與上述複數氣體吐出孔連通,上述基座構件及上述噴淋板係基材由金屬構成,上述基座構件之面對於上述氣體擴散空間的部分,以及上述噴淋板之面對於上述氣體擴散空間及上述氣體吐出孔之部分,被耐蝕性金屬材或耐蝕性皮膜覆蓋,上述基座構件具有以鋁或含鋁合金構成之基材,和以覆蓋上述基材之方式被設置在面對於上述氣體擴散空間之部分的作為上述耐蝕性金屬材而被構成的蓋構件,上述基座構件及上述噴淋板之較上述氣體擴散空間更外側之部分接觸,以密封構件被密封之狀態下被固定,在上述蓋構件之端部,形成在不接觸於上述噴淋板之表面的狀態被彎曲的彎曲部,上述密封構件接觸於上述噴淋板之上述耐蝕性皮膜或耐蝕性材,並且藉由上述彎曲部被推壓之狀態被保持。 A shower head is used in a gas treatment device for applying gas treatment to a substrate, and supplies a corrosive treatment gas to a chamber in which the substrate is arranged. The shower head comprises: a base member; a shower plate having a plurality of gas discharge holes for discharging the treatment gas; a gas diffusion space, which is a portion disposed between the base member and the shower plate, into which the treatment gas is introduced and which is connected to the plurality of gas discharge holes. The base member and the shower plate are made of a metal substrate, and a portion of the base member facing the gas diffusion space and a portion of the shower plate facing the gas diffusion space and the gas discharge holes are made of a corrosion-resistant The base member is covered with a corrosion-resistant metal material or a corrosion-resistant film, the base member has a substrate made of aluminum or an aluminum-containing alloy, and a cover member made of the corrosion-resistant metal material and arranged in a manner covering the substrate at a portion facing the gas diffusion space, the base member is in contact with a portion of the spray plate that is further outside the gas diffusion space, and is fixed in a sealed state by a sealing member, and a bent portion that is bent in a state of not contacting the surface of the spray plate is formed at the end of the cover member, the sealing member contacts the corrosion-resistant film or corrosion-resistant material of the spray plate, and is maintained in a state of being pressed by the bent portion. 如請求項1所記載之噴淋頭,其中上述耐蝕性金屬材由含鎳金屬構成。 The shower head as described in claim 1, wherein the corrosion-resistant metal material is composed of nickel-containing metal. 如請求項2所記載之噴淋頭,其中上述含鎳金屬為不鏽鋼或鎳基合金。 For the sprinkler head described in claim 2, the nickel-containing metal is stainless steel or a nickel-based alloy. 如請求項1或2所記載之噴淋頭,其中上述耐蝕性皮膜為陶瓷熔射皮膜。 A shower head as described in claim 1 or 2, wherein the corrosion-resistant coating is a ceramic spray coating. 如請求項4所記載之噴淋頭,其中上述陶磁熔射皮膜為氧化鋁熔射皮膜。 The shower head described in claim 4, wherein the ceramic spray coating is an aluminum oxide spray coating. 如請求項4所記載之噴淋頭,其中上述陶瓷熔射皮膜係以由合成樹脂構成之封孔材被封孔。 As described in claim 4, the above-mentioned ceramic spray coating is sealed with a sealing material composed of a synthetic resin. 如請求項1至3中之任一項所記載之噴淋頭,其中上述基座構件具有:由鋁或含鋁合金被構成,具有與上述氣體擴散空間對應之凹部的基材,和被形成覆蓋上述基材之上述氣體擴散空間之上面側之面的耐蝕性皮膜,和被設置成覆蓋上述基材之上述氣體擴散空間之側面側之面的由耐蝕性金屬構成的環狀構件。 A shower head as described in any one of claims 1 to 3, wherein the base member comprises: a substrate made of aluminum or an aluminum-containing alloy and having a recess corresponding to the gas diffusion space, a corrosion-resistant film formed to cover the upper surface of the gas diffusion space of the substrate, and an annular member made of corrosion-resistant metal arranged to cover the side surface of the gas diffusion space of the substrate. 如請求項1至3中之任一項所記載之噴淋頭,其中上述基座構件具有:由鋁或含鋁合金被構成,具有與上述氣體擴散空間對應之凹部的基材,和被形成覆蓋上述基材之上述氣體擴散空間之上面側之面的作為上述耐蝕性金屬材而被構成的蓋構件,和被設置成覆蓋上述基材之上述氣體擴散空間之側面側之面的由耐蝕性金屬構成的環狀構件。 A shower head as described in any one of claims 1 to 3, wherein the base member comprises: a substrate made of aluminum or an aluminum-containing alloy and having a recess corresponding to the gas diffusion space, a cover member made of the corrosion-resistant metal material and formed to cover the upper surface side of the gas diffusion space of the substrate, and an annular member made of corrosion-resistant metal and arranged to cover the side surface side of the gas diffusion space of the substrate. 如請求項8所記載之噴淋頭,其中上述蓋構件和上述環狀構件被形成一體。 A shower head as described in claim 8, wherein the cover member and the annular member are formed as one body. 如請求項7所記載之噴淋頭,其中進一步具有被設置在上述環狀構件和上述基座構件之間,以及上述環狀構件和上述噴淋板之間的密封構件。 The shower head as described in claim 7 further comprises a sealing member disposed between the annular member and the base member, and between the annular member and the shower plate. 如請求項1至3中之任一項所記載之噴淋頭,其中上述基座構件之面對於上述氣體擴散空間的部分被耐蝕性皮膜覆蓋,上述噴淋板之面對於上述氣體擴散空間的部分被耐蝕性皮膜覆蓋,上述基座構件側之上述耐蝕性皮膜,和上述噴淋板側之耐蝕性皮膜,延伸至較上述氣體擴散空間更外側之部分,成為該些彼此不接觸的狀態,在較上述氣體擴散空間更外側之部分,具有被形成在上述基座構件側之上述耐蝕性皮膜和上述噴淋板側之耐蝕性皮膜之間的密封構件。 A shower head as recited in any one of claims 1 to 3, wherein the portion of the base member facing the gas diffusion space is covered with a corrosion-resistant film, the portion of the spray plate facing the gas diffusion space is covered with a corrosion-resistant film, the corrosion-resistant film on the side of the base member and the corrosion-resistant film on the side of the spray plate extend to a portion further outward from the gas diffusion space, and are in a state where they do not contact each other, and a sealing member is formed between the corrosion-resistant film on the side of the base member and the corrosion-resistant film on the side of the spray plate at a portion further outward from the gas diffusion space. 如請求項1至3中之任一項所記載之噴淋頭,其中上述噴淋板具有由鋁或含鋁合金構成的基材,和被設置成在面對於上述氣體擴散空間之部分覆蓋上述基材之耐蝕性皮膜,和被嵌入至上述基材,被設置成覆蓋上述複數氣體吐出孔的複數套筒。 A shower head as described in any one of claims 1 to 3, wherein the shower plate has a substrate made of aluminum or an aluminum-containing alloy, a corrosion-resistant film arranged to cover the substrate in a portion facing the gas diffusion space, and a plurality of sleeves embedded in the substrate and arranged to cover the plurality of gas discharge holes. 如請求項1至3中之任一項所記載之噴淋頭,其中 上述噴淋板具有由耐蝕性金屬材構成之基材,上述基材露出至上述氣體擴散空間及上述氣體吐出孔。 A shower head as described in any one of claim items 1 to 3, wherein the shower plate has a substrate made of a corrosion-resistant metal material, and the substrate is exposed to the gas diffusion space and the gas discharge hole. 如請求項13所記載之噴淋頭,其中上述基座構件具有由鋁或含鋁合金構成的基材,和被設置成在面對於上述氣體擴散空間之部分覆蓋上述基材的作為上述耐蝕性金屬材被構成的蓋構件或耐蝕性皮膜,上述蓋構件或上述耐蝕性皮膜延伸至較上述氣體擴散空間更外側,密封構件介於較上述噴淋板之上述基材,和較上述氣體擴散空間更外側部分的上述蓋構件或上述耐蝕性皮膜之間。 The shower head as described in claim 13, wherein the base member has a substrate made of aluminum or an aluminum-containing alloy, and a cover member or a corrosion-resistant film made of the corrosion-resistant metal material arranged to cover the substrate at a portion facing the gas diffusion space, the cover member or the corrosion-resistant film extending to the outside of the gas diffusion space, and the sealing member is between the substrate of the shower plate and the cover member or the corrosion-resistant film at the outside of the gas diffusion space. 如請求項1至3中之任一項所記載之噴淋頭,其中上述氣體處理裝置係在上述腔室內生成處理氣體之電漿而進行電漿處理之電漿處理裝置,上述噴淋板具有被形成在上述電漿接觸之面的耐電漿性皮膜。 A shower head as recited in any one of claims 1 to 3, wherein the gas treatment device is a plasma treatment device that generates plasma of the treatment gas in the chamber to perform plasma treatment, and the shower plate has a plasma-resistant film formed on the surface contacted by the plasma. 一種氣體處理裝置,係用以對基板施予氣體處理,該氣體處理裝置之特徵為,具備:腔室,用以收容基板;載置台,其係在上述腔室內載置基板;及如請求項1至請求項15中之任一項所記載之噴淋頭,其係在上述腔室內,被設置成與上述載置台相向,對上述腔室內供給用以生成電漿之腐蝕性的處理氣體。 A gas treatment device is used to perform gas treatment on a substrate, and the gas treatment device is characterized by comprising: a chamber for accommodating the substrate; a mounting table for mounting the substrate in the chamber; and a shower head as described in any one of claim 1 to claim 15, which is arranged in the chamber to face the mounting table and supply a corrosive treatment gas for generating plasma into the chamber.
TW108141737A 2018-11-30 2019-11-18 Shower heads and gas handling devices TWI840450B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018224855A JP7126431B2 (en) 2018-11-30 2018-11-30 shower head and gas treater
JP2018-224855 2018-11-30

Publications (2)

Publication Number Publication Date
TW202034364A TW202034364A (en) 2020-09-16
TWI840450B true TWI840450B (en) 2024-05-01

Family

ID=70909022

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108141737A TWI840450B (en) 2018-11-30 2019-11-18 Shower heads and gas handling devices

Country Status (4)

Country Link
JP (1) JP7126431B2 (en)
KR (1) KR102279535B1 (en)
CN (1) CN111261485B (en)
TW (1) TWI840450B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230069200A (en) * 2020-09-17 2023-05-18 램 리써치 코포레이션 Hybrid showerhead with separate facing plate for high temperature process
TW202232564A (en) * 2020-10-15 2022-08-16 日商東京威力科創股份有限公司 Fastening structure, plasma processing apparatus, and fastening method
JP7507663B2 (en) 2020-11-17 2024-06-28 東京エレクトロン株式会社 Fastening structure, fastening method, and plasma processing apparatus
US20220254660A1 (en) * 2021-02-05 2022-08-11 Linco Technology Co., Ltd. Substrate processing apparatus
KR102676987B1 (en) * 2021-03-17 2024-06-24 도쿄엘렉트론가부시키가이샤 Gas treatment apparatus
JP7494244B2 (en) 2021-06-02 2024-06-03 東京エレクトロン株式会社 Shower head, electrode unit, gas supply unit, substrate processing apparatus and substrate processing system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969514A (en) * 1995-09-01 1997-03-11 Mitsubishi Electric Corp Vacuum processing system and production of semiconductor device
TW201627528A (en) * 2014-10-29 2016-08-01 東京威力科創股份有限公司 Film forming apparatus and shower head
JP2017022356A (en) * 2015-07-10 2017-01-26 東京エレクトロン株式会社 Plasma processing device and shower head
TW201830518A (en) * 2013-07-20 2018-08-16 美商應用材料股份有限公司 Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761040B2 (en) * 1995-06-26 2006-03-29 株式会社アルバック Structural material for vacuum apparatus and structural member for vacuum apparatus
JP3559920B2 (en) * 1996-07-29 2004-09-02 東京エレクトロン株式会社 Plasma processing equipment
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
JP4628900B2 (en) * 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP2008010579A (en) * 2006-06-28 2008-01-17 Renesas Technology Corp Semiconductor device manufacturing apparatus
JP2011228343A (en) * 2010-04-15 2011-11-10 Fujifilm Corp Manufacturing method for gas supply electrode
JP5782293B2 (en) * 2011-05-10 2015-09-24 東京エレクトロン株式会社 Plasma generating electrode and plasma processing apparatus
CN103524044A (en) * 2012-07-05 2014-01-22 周业投资股份有限公司 Top electrode of reaction tank device for etching equipment
JP2014157944A (en) * 2013-02-15 2014-08-28 Toshiba Corp Gas supply member and plasma processing apparatus
JP6228400B2 (en) * 2013-07-16 2017-11-08 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
JP2016225018A (en) 2015-05-27 2016-12-28 東京エレクトロン株式会社 Gas processing device and multi-division shower head used for the same
CN106340434B (en) * 2015-07-10 2018-12-14 东京毅力科创株式会社 Plasma processing apparatus and spray head

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969514A (en) * 1995-09-01 1997-03-11 Mitsubishi Electric Corp Vacuum processing system and production of semiconductor device
TW201830518A (en) * 2013-07-20 2018-08-16 美商應用材料股份有限公司 Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
TW201627528A (en) * 2014-10-29 2016-08-01 東京威力科創股份有限公司 Film forming apparatus and shower head
JP2017022356A (en) * 2015-07-10 2017-01-26 東京エレクトロン株式会社 Plasma processing device and shower head

Also Published As

Publication number Publication date
JP2020088317A (en) 2020-06-04
CN111261485A (en) 2020-06-09
KR102279535B1 (en) 2021-07-19
KR20200066217A (en) 2020-06-09
JP7126431B2 (en) 2022-08-26
TW202034364A (en) 2020-09-16
CN111261485B (en) 2022-12-06

Similar Documents

Publication Publication Date Title
TWI840450B (en) Shower heads and gas handling devices
TWI813699B (en) Jet head and plasma treatment device
KR20200103556A (en) Stage and substrate processing apparatus
KR101798733B1 (en) Shield ring and substrate mounting table
TW202232564A (en) Fastening structure, plasma processing apparatus, and fastening method
JP7182916B2 (en) Plasma processing equipment
JP7145625B2 (en) Substrate mounting structure and plasma processing apparatus
JP7316863B2 (en) Joining structure and joining method of first conductive member and second conductive member, and substrate processing apparatus
JP7500397B2 (en) Plasma processing apparatus, its manufacturing method, and plasma processing method
JP7537846B2 (en) Processing vessel, plasma processing apparatus, and method for manufacturing processing vessel
JP7507663B2 (en) Fastening structure, fastening method, and plasma processing apparatus
JP7519893B2 (en) Showerhead manufacturing method, showerhead, and plasma processing apparatus
JP2001104774A (en) Plasma treatment apparatus
JP2022065608A (en) Fastening structure, plasma processing device, and fastening method