JP2001104774A - Plasma treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus capable of preparing and using the most suitable gas ring in response to environments of use such as kinds of reactive gas to be used, plasma conditions and the like in a short time. SOLUTION: This plasma treatment apparatus 1A has a treatment chamber 2 in which a semiconductor wafer W is disposed. A reactive gas is fed into the chamber 2 through a reactive gas-jetting ring (gas ring) 80 and plasma is generated to perform plasma treatment of the wafer W. The gas ring 80 comprises a gas feed part 8200 fed with the reactive gas and a plasma exposure part 8100 and the gas feed part 8200 is freely detachably attached to the plasma exposure part 8100. The gas feed part 8200 is constituted of a material having a heat resistance and a corrosion resistance higher than those of the plasma exposure part 8100.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing plasma etching, plasma CVD, sputtering, or the like on a surface of an object to be processed, for example, a semiconductor wafer, a glass substrate of a liquid crystal display panel, or an information recording disk. Things.

[0002]

2. Description of the Related Art First, a conventional plasma processing apparatus will be described with reference to FIGS.

FIG. 11 is a sectional side view showing the structure of a conventional plasma processing apparatus, FIG. 12 is a back view of a gas ring which is a component of the plasma processing apparatus shown in FIG. 11, and FIG. It is sectional drawing on the AA line of the shown gas ring.

In the following description, a semiconductor wafer will be described as an object to be processed.

FIG. 11 shows an example of a conventional plasma processing apparatus. The inductive plasma processing apparatus 1 having such a configuration and structure is manufactured by Allianc of Ramsearch Co., Ltd.
e9400. This plasma processing apparatus 1
Is mainly a processing chamber (chamber) 2 formed in a cylindrical shape from aluminum or the like, a lower electrode 3 disposed in the processing chamber 2, , A reactive gas supply device 5 for supplying a reactive gas into the processing chamber 2, and the like.

An opening 21 for loading and unloading the semiconductor wafer W is formed in one side wall of the processing chamber 2, and the gas in the processing chamber 2 is exhausted to the other side wall facing the opening 21. An exhaust port 22 is formed outside of the opening 21 and the exhaust port 22 to open and close the opening 21 and the exhaust port 22 to maintain an airtight inside the processing chamber 2. (Shown).

The lower electrode 3 is provided on the inner surface of the bottom of the processing chamber 2 and includes an electrode stage 31, an insulating ring 32, a high-frequency generator 33, and the like. The electrode stage 31 receives the semiconductor wafer W loaded from the opening 21.
And a function of attracting ions to the surface of the chucked semiconductor wafer W by applying a high frequency. The static electricity and the high frequency are generated by the high frequency generator 33. An insulating ring 32 made of ceramic is fitted around the outer periphery of the electrode stage 31 and is insulated from a reactive gas ejection ring (hereinafter simply referred to as a “gas ring”) 51 described later.

The reactive gas supply device 5 is a means for supplying a reactive gas necessary for semiconductor wafer processing (plasma formation) into the processing chamber 2, and includes a gas ring 51 and a reactive gas supply pipe ( Hereinafter, it is simply referred to as a “gas supply pipe”) 52 and the like.

The structure of the gas ring 51 is shown in FIGS.
As shown in FIG. 3, a flat truncated cone shape is formed inside the space 5110, and the center of the inner space 5110 is the outer periphery of the insulating ring 32 fitted on the outer periphery of the electrode stage 31. 51 with a diameter that fits
30 is open. A gas supply ring portion 5120 is formed by a horizontal plate on the outer periphery of the lower end of the gas ring 51. An annular gas supply groove 5121 having a rectangular cross section is formed in a portion approximately one-third from the outer periphery of the back surface of the gas supply ring portion 5120. A plurality, in the illustrated example, 16 gas supply holes 5122 are opened. These gas supply holes 5122 are, for example, through holes having a diameter of about 1 mm, and are opened on the surface (upper surface) of the gas supply ring 5120. In addition, the gas supply groove 512
A pair of mounting holes 5123 centered at 1 are formed. The gas supply pipe 5 is provided in these mounting holes 5123.
2 is attached. Further, on the back surface of the gas supply ring portion 5120, two seal ring grooves 5124 and 512 are formed concentrically with the gas supply groove 5121 interposed therebetween.
5 are formed.

The gas ring 51 having such a structure is disposed at the bottom of the processing chamber 2, and is provided at the opening 5130 with the electrode stage 31.
The electrode stage 31, the insulating ring 32 and a part of the high frequency generator 33 are housed in the internal space 5110 so that the surface of the insulating ring 32 is exposed. Gas ring 5
Mounting hole 51 formed in the first gas supply ring portion 5120
23, a gas supply pipe 52 is inserted from below,
It is fastened and fixed with a hexagon nut 6 from above. A gas outlet 5210 is formed at the distal end of the gas supply pipe 52. When the gas supply pipe 52 is attached to the gas supply ring 5120 and fixed as described above, the gas It is formed at a position that opens into the supply groove 5121. Note that the base end of the gas supply pipe 52 is connected to a reactive gas supply source (not shown).

When the semiconductor wafer W mounted on the electrode stage 31 is to be removed, the semiconductor wafer W
A lifting device 7 is provided for lifting a plurality of pins 71 for lifting the lift. The detailed structure is omitted.

The plasma generator 4 includes a high-frequency generator 41, an induction coil 42, an insulating plate 43, a partition plate 45, and the like. The high-frequency generator 41 incorporates an electronic circuit and the like for supplying a high-frequency current to the induction coil 42, and a detailed configuration thereof and a description thereof will be omitted. The induction coil 42 is formed in a spirally wound structure, and is insulated by an insulating plate 43 and a plurality of insulators 44.
Supported. The induction coil 42 having such a structure faces the upper part of the processing chamber 2 so as to face the electrode stage 31,
It is arranged outside the processing chamber 2. Induction coil 42
A quartz partition plate 45 is disposed between the processing chamber 2 and the processing chamber 2 so that the high frequency from the induction coil 42 passes through the processing chamber 2 but the processing chamber 2 does not allow the air to enter the processing chamber 2. 2
It plays the role of a seal that keeps the inside vacuum.

When a plasma process such as an etching process or a CVD process is performed on the surface of a semiconductor wafer W, which is one of the objects to be processed, by the plasma processing apparatus 1 having the above-described configuration, the semiconductor wafer W is opened through the opening 21. Is loaded and placed on the electrode stage 31, and the inside of the processing chamber 2 is set to a predetermined degree of vacuum. Then, the high frequency generators 33 and 41 are operated to apply a high frequency into the processing chamber 2 from the high frequency generator 41, and the semiconductor wafer W is electrostatically chucked to the electrode stage 31 by static electricity from the high frequency generator 33 and the high frequency is applied. Is applied. Further, a reactive gas is supplied from the gas supply pipe 52 into the processing chamber 2 via the gas ring 51, and the reactive gas is ionized by the plasma generated by the induction coil 42, and the ions are applied to the electrode stage 31. The high frequency is attracted to the surface of the semiconductor wafer W.

The supply of the reactive gas from the gas supply pipe 52 into the processing chamber 2 is performed as follows. That is, under a predetermined pressure, the reactive gas is ejected from the gas ejection port 5210 formed at the tip of the gas supply pipe 52 into the gas supply groove 5121 of the gas ring 51, and the reactive gas is supplied through the gas supply groove 5121. 16 gas supply holes 5122
From the inside of the processing chamber 2.

[0015]

Conventionally, the gas ring 51 having the above-mentioned structure is used for the reactive gas to be used and the processing chamber 2.
The gas supply ring unit 51 according to the use environment in the processing chamber 2 such as the reaction temperature, the degree of vacuum, the type of plasma processing, etc.
When an attempt is made to change the back surface of the gas ring 20 contacted with the reactive gas to a high corrosion resistance, the back surface of the gas supply ring portion 5120 of the gas ring 51, which has been subjected to an anodic oxide film treatment, is usually provided as follows. It was used after being subjected to various surface treatments. That is, 1. 1. Surface coating by Teflon coating 2. Surface coating processing by spraying ceramic etc. It was necessary to perform plating and the like to apply a metal coating such as nickel and chromium.

On the other hand, these surface treatments, on the other hand, often have a high processing temperature during construction, and
The sealing performance of the anodic oxide film applied to the surface (plasma irradiated surface) of the gas ring 51, which is originally a plasma resistant application, is due to the evaporation of the adsorbed moisture in the boehmite layer of the anodic oxide film or the adsorbed moisture inside the cell. If the gas ring thus produced is brought into the processing chamber 2 where plasma is generated due to a decrease in temperature and a thermal cycle, the degree of vacuum is reduced, and the semiconductor wafer is processed (when plasma is irradiated). In addition, the abrasion loss of the anodic oxide coating increases significantly, and the abrasion and scattering of the coating dust adheres to the surface of the semiconductor wafer W being processed, causing an increase in the amount of contamination.

With respect to the corrosion resistance, none of the above surface treatments can withstand a long-time contact with a high-temperature, highly corrosive gas, and eventually erodes the anodic oxide film layer underlying the film. In this case, aluminum as a base material is corroded.
Once such corrosion occurs, the aluminum and the reactive gas react with each other. In particular, by reaction with a halogen-based gas, for example, in the case of chlorine gas, 40.0 Kcal /
mol of aluminum intermolecular bonding force is 118.0 Kc
becomes Al _X Cl _Y compound of al / mol, then, in contact with a fluorine gas, it changes to strong 159.0Kcal / molAlF _X compounds than intermolecular bonds with the chlorine gas. These aluminum compounds have been found to be carried along with the reactive gas near the surface of the semiconductor wafer during semiconductor wafer processing, causing various obstacles.

Accordingly, the present invention is intended to solve these problems, and an optimal gas ring is prepared in a short time according to the type of reactive gas to be used and the use environment such as plasma conditions. It is an object of the present invention to obtain a usable plasma processing apparatus.

[0019]

Therefore, in the plasma processing apparatus according to the first aspect of the present invention, an object to be processed is placed in a processing chamber, and a reactive gas ejection ring is formed in the processing chamber. A plasma processing apparatus for performing plasma processing on the object by generating plasma by supplying the reactive gas to the processing object by supplying the reactive gas ejection ring to a gas supply unit to which the reactive gas is supplied and a plasma directly exposed to the plasma. The gas supply unit is configured to be detachably attached to the plasma exposure unit,
The gas supply unit is made of a material having higher heat resistance and corrosion resistance than the plasma exposure unit, thereby solving the above-mentioned problem.

In the plasma processing apparatus according to the second aspect of the present invention, an object to be processed is placed in a processing chamber, a reactive gas is supplied into the processing chamber via a reactive gas blowing ring, and plasma is generated. In the plasma processing apparatus that generates and performs plasma processing on the object to be processed, the reactive gas ejection ring includes a gas supply unit supplied with a reactive gas and a plasma exposed unit directly exposed to plasma, The gas supply unit is configured to be detachably attached to the plasma exposure unit, and the gas supply unit is formed of a material having higher heat resistance and corrosion resistance than the plasma exposure unit. The above problem is solved by controlling the supply pressure of the reactive gas to be supplied to the gas ejection ring under the principle of the critical expansion condition of the gas and supplying the gas.

Further, in the plasma processing apparatus according to the third aspect of the present invention, in the plasma processing apparatus according to the first or second aspect, the plasma-exposed portion has an opening at the center where the electrode stage is fitted. An open hollow frusto-conical portion and a ring mounting portion formed horizontally from a lower peripheral portion of the frusto-conical portion, further comprising a gas supply portion to which the reactive gas is supplied is a ring-shaped portion. The above problem is solved by a structure that is detachably attached to the back surface of the attachment portion.

Therefore, according to the first aspect of the present invention,
According to the type of the reactive gas used and / or the plasma conditions, an optimum reactive gas ejection ring of the combination of the gas supply unit and the plasma exposure unit can be selected and used.

According to the second aspect of the present invention, in addition to the above-described operation, the reactive gas supplied into the processing chamber leaks from the gap where the gas supply unit and the plasma exposure unit are opposed to each other and are in contact with each other. Never do.

Furthermore, according to the third aspect of the present invention, even if the plasma-exposed portion or the gas supply portion is deformed or damaged, only the member can be easily replaced and restarted in a short time. In addition to this, equipment costs can be reduced.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIGS.
A plasma processing apparatus according to a preferred embodiment of the present invention will be described.

FIG. 1 is a cross-sectional side view showing a configuration of a plasma processing apparatus according to an embodiment of the present invention. FIG. 2 is a rear plan view of a gas ring according to an embodiment of the present invention mounted on FIG.
FIG. 4 is a cross-sectional side view of the gas ring shown in FIG. 2 along the line AA, FIG. 4 is a partially enlarged view of the gas ring shown in FIG. 3, and FIG. FIG. 5B is an enlarged view of a portion encircled by an arrow C, FIG. 5 is a rear plan view of a plasma-exposed portion which is one component of the gas ring shown in FIG. 2, and FIG. FIG. 7 is a partial enlarged view of the gas ring shown in FIG. 6, and FIG. 7A is an enlarged view of a part circled by an arrow B, and FIG.
5 is an enlarged view of a portion circled by an arrow C, FIG. 5C is a cross-sectional view taken along a line DD in FIG. 5, and FIG. 8 is a view of a gas supply ring portion which is another component of the gas ring shown in FIG. FIG. 9 is a plan view of the back surface, and FIG.
10 is a partially enlarged view of the gas supply ring portion shown in FIG. 9, FIG. 10A is an enlarged view of a part circled by an arrow B, and FIG. 8 is an enlarged view of a portion surrounded by a circle, and FIG. C is a cross-sectional view taken along line DD in FIG.

First, a plasma processing apparatus according to an embodiment of the present invention will be described with reference to FIG.

In FIG. 1, reference numeral 1A indicates a plasma processing apparatus of the present invention. The plasma processing apparatus 1A of the present invention includes:
Only the configuration and structure of the gas ring (reactive gas ejection ring) of the present invention indicated by reference numeral 80 are different,
Since the structural parts are the same as those of the conventional plasma processing apparatus shown in FIG. 11, the same structures and structural parts are denoted by the same reference numerals, and descriptions of those structures and structures are omitted.

The gas ring 80 is, as shown in FIGS. 2 and 3, a plasma-exposed portion 8 directly exposed to plasma.
100 (FIGS. 5 to 7) and a gas supply unit 8200 (FIGS. 8 to 10) to which a reactive gas is supplied. The gas supply unit 8200 has a structure that can be fitted into the plasma exposure unit 8100, and is configured to be removably attached to the plasma exposure unit 8100 with fixing means such as screws. The gas supply section 8200 is formed of a material having higher heat resistance and corrosion resistance than the plasma exposure section 8100.

More specifically, as shown in FIGS. 5 and 7, the plasma-exposed portion 8100 has an opening 8111 at the center where the electrode stage 31 and the insulating ring 32 can be fitted. Is a flat ring mounting portion which is formed horizontally from a truncated cone portion 8110 of a hollow 8112 and a lower peripheral portion of the truncated cone portion 8110 and to which the gas supply portion 8200 to which a reactive gas is supplied is mounted on the back surface. 8120.

A ring-shaped mounting groove 8121 having a rectangular cross section is formed on the back surface of the ring mounting portion 8120. The mounting groove 8121 is precisely formed by cutting or the like with a size along the outer diameter of the gas supply ring portion so that the gas supply portion 8200 described later can be fitted as closely as possible. On the bottom surface of the mounting groove 8121, a plurality of gas jet ports 8122 having a diameter of 1 mm similar to the gas jet ports 5210, 16 in the illustrated example, having a diameter of 1 mm are formed at equal intervals. These gas outlets 8122
7B and FIG. 7C, the mounting groove 8 is enlarged.
A hole is formed at the center of a circular concave hole 8123 having a relatively large diameter formed on the bottom surface of 121 and penetrates to the surface to which plasma is directly irradiated. The dimensions of the inner diameter and the depth of these circular concave holes 8123 correspond to the outer diameter and the length of the cylindrical projections 8216 formed in the gas supply unit 8200 described later. Reference numeral 8216 denotes a fitting hole.

Then, as shown in FIG. 7A, the ring mounting portion 812 in which the mounting groove 8121 is formed.
A pair of circular concave holes 8124 having a depth capable of forming the same surface as the hexagon nut 53, which is one of the fixing means, is formed on the surface on the side opposite to the surface 0 at an angular interval of 180 degrees. The gas supply pipe 52 has a through hole 8125 through which the distal end of the gas supply pipe 52 can be inserted through each of the circular concave holes 8124 and the mounting concave grooves 8121. Further, as shown in FIGS. 5, 6 and 7A, female screws 8126 capable of screwing the gas supply portion 8200 are formed at a plurality of positions of the mounting groove 8121, for example, at four positions in the illustrated example. ing.

The plasma exposed portion 8100 is, for example,
It is made of aluminum, and its surface is anodized. In addition, the mounting groove 8121
The inner surface is finished smoothly.

Next, referring also to FIGS. 8 to 10,
The structure of the gas supply unit 8200 will be described. This gas supply unit 8200 is plate-shaped and has an annular shape.
The outer diameter dimension is the thickness of the mounting groove 8121 in the thickness.
And the inner diameter and the outer diameter thereof are finished to the dimensions corresponding to the respective dimensions of the mounting groove 8121. Further, the surface, the inner peripheral surface, and the outer peripheral surface of the gas supply unit 8200 are finished smoothly so as to be in close contact with the bottom surface, the inner peripheral surface, and the outer peripheral surface of the mounting groove 8121.

On the back surface of the gas supply portion 8200, there are provided a gas supply groove 5121 formed on the back surface of the gas supply ring portion 5120 and concave grooves 5124 and 5125 formed on both sides thereof for mounting a seal ring. A similar gas supply groove 8210 and concave grooves 8211 and 8212 formed on both sides thereof, on which seal rings are mounted, are formed concentrically.

Then, on the bottom of the gas supply groove 8210,
Sixteen gas inlet holes 8213 having a diameter of 1 mm penetrate at equal angular intervals in accordance with the positions of the 16 gas outlets 8122. These gas introduction holes 8213 are provided in FIG.
B and FIG. 10C, the gas supply grooves 8 are enlarged.
It is formed so as to penetrate the center of a columnar projection 8216 formed on the surface opposite to the side where the 210 is formed (the side facing the plasma exposed portion 8100). The outer diameter and length dimension of these cylindrical projections 8216 match the inner diameter and depth of the circular concave hole 8123 formed in the plasma-exposed portion 8100, and are formed in dimensions that allow fitting. As described later, each of the gas introduction holes 8213 is formed by a corresponding one of the columnar projections 8216 and a corresponding one of the circular concave holes 8123.
Are fitted to the gas outlets 8122 formed at the centers of the circular concave holes 8123 when they are fitted.

Further, the gas supply groove 8210 is formed with a pair of mounting holes 8214 having a diameter into which the tip of the gas supply pipe 52 can be inserted at an angular interval of 180 degrees.

Further, inside the concave groove 8211, four mounting holes 8215 each having a size of 90 degrees, into which a mounting screw for mounting the gas supply portion 8200 to the plasma exposed portion 8100 can be inserted. It is opened at angular intervals.

The plasma exposure unit 8100 and the gas supply unit 8200 having the structures described above are assembled as follows. That is, the gas supply unit 8200 is configured such that the pair of through holes 8214 coincides with the pair of through holes 8125 of the plasma exposure unit 8100, and that each of the columnar projections 8216 of the gas supply unit 8200 has the plasma exposure unit 8200. The gas supply unit 8200 is pushed in to fit the respective circular concave holes 8123 into the respective circular concave holes 8123, and the respective column-shaped projections 8216 are fitted into the respective circular concave holes 8123. 8
After fitting into the mounting recessed groove 8121 of 100, it is tightened and fixed with four mounting screws 91. The component assembled in this way is the gas ring 80 shown in FIGS.

The gas ring 80 is formed by
1, 8212 with a seal ring (not shown) fitted therein, as shown in FIG.
The gas supply pipe 52 is disposed so as to surround the electrode stage 31 and the insulating ring 32, and the distal end of the gas supply pipe 52 inserted from below the bottom thereof has a through hole 8214 of the gas supply unit 8200 and a through hole of the plasma exposure unit 8100. 8125
The gas supply pipe 52 is attached by tightening the male screw at the distal end of the circular concave hole 8124 through the through hole through the hexagon nut 53, and the gas ring 80 is fixed to the bottom inner surface of the processing chamber 2.

When the plasma processing apparatus 1A of the present invention is configured as described above and the reactive gas is supplied to the gas ring 80 from the gas supply pipe 52, the reactive gas is supplied to the distal end of the gas supply pipe 52. From the gas ejection port 5210 formed in the gas supply portion 8200 to the gas supply groove 82
10, and the ejected reactive gas passes through the respective gas introduction holes 8213 and the respective gas ejection ports 8122 of the plasma exposure section 8100 and is injected into the processing chamber 2. The supply of the reactive gas is the same as that in the conventional plasma processing apparatus 1.

As described above, the gas ring 80 according to the present invention is provided with the gas supply unit 82
Since the components are assembled by fitting the components of No. 00, there is a concern that the reactive gas may leak from the mating surface of the two components. If the supply pressure of the reactive gas is controlled and supplied to the gas ring 80, the above concern can be solved. That is, the reactive gas that has passed through the annular gas supply groove 8210 is filled with the gas introduction hole 82 which is a thin tube having a diameter of 1 mm.
13 and the gas outlet 8122, the gas pressure in the gas supply groove 8210 is supplied so as to satisfy a relationship of at least twice the gas pressure near the outlet of the thin tube having a diameter of 1 mm. The flow rate of the reactive gas can be proportional to the gas pressure in the gas supply groove 8210. When the ratio between the gas supply pressure and the gas pressure near the capillary outlet is smaller than 0.54, for example, in the case of nitrogen gas, the flow rate in the capillary becomes sonic speed by the principle of the critical expansion condition of the reactive gas. Can be equal.
This is because, even if a gap is formed in the abutting surface between the plasma exposure unit 8100 and the gas supply unit 8200, there is practically no possibility that the reactive gas stays in the gap or leaks in the lateral direction. , On the mating surface,
It does not require cumbersome assembly work such as bonding and press-fitting both parts with an adhesive or a sealing agent, or a special jig.

Therefore, the gas ring 80 of the present invention not only prevents the reactive gas from leaking but also provides a gas supply section 82.
00 can be removably assembled to the plasma-exposed portion 8100 by mechanical fixing means such as mounting screws, which means that the type of reactive gas to be used and the process conditions in the processing chamber 2 such as plasma conditions. If the shape is the same, the gas supply unit 8200 with a different material
By preparing a plurality of types of parts of the plasma exposure unit 8100 in advance, it is possible to use a combination of the gas supply unit 8200 and the plasma exposure unit 8100 that is optimal for the process conditions. Examples of the material of the gas supply unit 8200 include polyimide resin, Teflon resin, glass, and stainless steel.

Also, as described above, the plasma exposed portion 810
Since the gas supply unit 8200 and the gas supply unit 8200 can be assembled with mechanical fixing means such as mounting screws, unnecessary gas is discharged into the processing chamber 2 unlike the case of assembling using chemical fixing means. There is no.

Furthermore, even if the plasma-exposed portion 8100 or the gas supply portion 8200 has a defect such as deformation or loss, the defective component can be easily replaced and repaired if necessary.

[0046]

As described above, according to the plasma processing apparatus of the present invention, the gas ring (reactive gas ejection ring) 80 is connected to the plasma exposure unit 8100 and the gas supply unit 82.
Due to the division into 00 parts: 1. Both components optimal for the process conditions of the object to be processed in the processing chamber 2 can be selected and used easily in a short time. Since both parts can be made only by mechanical cutting,
2. No special or expensive manufacturing equipment or manufacturing process is required. 3. Since both parts can be fastened by mechanical fastening means, assembly or disassembly is easy. Since both parts can be fastened by a mechanical fastening means, many excellent effects can be obtained in that unnecessary gas is not released into the processing chamber as compared with other fastening means.

[Brief description of the drawings]

FIG. 1 is a sectional side view showing a configuration of a plasma processing apparatus according to an embodiment of the present invention.

FIG. 2 is a rear plan view of the gas ring according to the embodiment of the present invention mounted on FIG. 1;

FIG. 3 is a cross-sectional side view of the gas ring shown in FIG. 2 taken along line AA.

4 is an enlarged view of a part of the gas ring shown in FIG. 3, wherein FIG. 4A is an enlarged view of a part circled by an arrow B, and FIG.
Is an enlarged view of a part circled by an arrow C.

FIG. 5 is a rear plan view of a plasma-exposed portion, which is a component of the gas ring shown in FIG. 2;

FIG. 6 is a cross-sectional view taken along line AA in FIG.

7 is a partially enlarged view of the gas ring shown in FIG. 6, wherein FIG. 7A is an enlarged view of a part circled by an arrow B, and FIG.
5 is an enlarged view of a part circled by an arrow C, and FIG. C is a cross-sectional view taken along line DD in FIG.

FIG. 8 is a rear plan view of a gas supply ring portion which is another component of the gas ring shown in FIG. 2;

9 is a cross-sectional side view of the gas supply ring section shown in FIG. 8 taken along line AA.

10 is an enlarged view of a part of the gas supply ring portion shown in FIG. 9, wherein FIG. 10A is an enlarged view of a part circled by an arrow B, and FIG. Enlarged view of figure C
FIG. 10 is a sectional view taken along line DD in FIG. 8.

FIG. 11 is a sectional side view showing a configuration of a conventional plasma processing apparatus.

FIG. 12 is a back view of a gas ring which is a component of the plasma processing apparatus shown in FIG.

FIG. 13 is a cross-sectional view of the gas ring shown in FIG. 12 taken along the line AA.

[Explanation of symbols]

1A: Plasma processing apparatus of the present invention, 2: Processing chamber, 3: Lower electrode, 31: Electrode stage, 32: Insulating ring, 33
... High frequency generator, 4 ... Plasma generator, 41 ... High frequency generator, 42 ... Induction coil, 45 ... Partition plate, 5A ...
Reactive gas supply device, 52: Gas supply pipe, 53: Hex nut, 7: Lift device, 80: Gas ring (reactive gas ejection ring) of the present invention, 8100: Plasma exposed portion, 8111: Opening, 8120: Ring Mounting part, 81
21: mounting groove, 8122: gas outlet, 8123: circular hole, 8124: circular hole, 8125: through hole, 81
26 ... female screw, 8200 ... gas supply part, 8210 ... gas supply groove, 8211, 8212 ... concave groove, 8213 ... gas introduction hole, 8214 ... through hole, 8215 ... mounting hole, 8216
… Cylindrical projection

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/31 H05H 1/46 M 5F103 H05H 1/46 H01L 21/302 BF Term (Reference) 4G075 AA30 AA62 BC02 BC06 BC10 BD12 BD14 CA47 EB43 EC03 EE02 FA12 FB04 FC06 FC09 4K029 CA06 DA04 DA06 DC27 4K030 EA03 EA06 FA01 5F004 BA04 BB13 BB28 BB29 CA02 5F045 EB03 EB05 EE17 EF04 EF05 EF08 BB11 BB11 BB11 BB08

Claims (3)

[Claims] An object to be processed is placed in a processing chamber, a reactive gas is supplied into the processing chamber through a reactive gas ejection ring, and plasma is generated to perform plasma processing on the object to be processed. In the processing apparatus, the reactive gas ejection ring includes a gas supply unit to which a reactive gas is supplied and a plasma exposure unit that is directly exposed to plasma, and the gas supply unit is provided with respect to the plasma exposure unit. A plasma processing apparatus, wherein the gas supply section is formed of a material having higher heat resistance and corrosion resistance than the plasma exposure section. 2. An object to be processed is placed in a processing chamber, a reactive gas is supplied into the processing chamber via a reactive gas ejection ring, and plasma is generated to perform plasma processing on the object to be processed. In the processing apparatus, the reactive gas ejection ring includes a gas supply unit to which a reactive gas is supplied and a plasma exposure unit that is directly exposed to plasma, and the gas supply unit is provided with respect to the plasma exposure unit. The gas supply unit is made of a material having higher heat resistance and corrosion resistance than the plasma exposure unit, and is supplied to the reactive gas ejection ring. A plasma processing apparatus, characterized in that the supply pressure of a reactive gas is controlled and supplied under the principle of a critical expansion condition of a gas. 3. The plasma-exposed portion includes a hollow truncated cone having an opening into which the electrode stage is fitted in a central portion, and a ring mounting portion formed horizontally from a lower peripheral portion of the truncated cone. 2. The plasma processing apparatus according to claim 1, wherein a gas supply unit to which the reactive gas is supplied is configured to be detachably attached to a back surface of the ring attachment unit. .