TWI831112B - Nozzle type deposition apparatus - Google Patents
Nozzle type deposition apparatus Download PDFInfo
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- TWI831112B TWI831112B TW111100693A TW111100693A TWI831112B TW I831112 B TWI831112 B TW I831112B TW 111100693 A TW111100693 A TW 111100693A TW 111100693 A TW111100693 A TW 111100693A TW I831112 B TWI831112 B TW I831112B
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- nozzle
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- type deposition
- deposition device
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- 230000008021 deposition Effects 0.000 title claims abstract description 66
- 239000002994 raw material Substances 0.000 claims abstract description 82
- 238000000151 deposition Methods 0.000 claims description 65
- 239000007789 gas Substances 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
本發明涉及噴嘴型沉積裝置，更詳細地，涉及將用於沉積圖案的原料按所需提供於圖案沉積，並進行沉積，可最小化原料的使用量，並且根據僅在需要形成圖案的部位供給原料，從而可進行精確的圖案沉積，並防止原料的擴散，可從根源上防止原料沉積到其他部位，利用加熱氣體可防止供給原料的排管及噴嘴的堵塞，並根據以噴嘴方式供給原料，從而可簡易並有效地構成沉積裝置的噴嘴型沉積裝置。 The present invention relates to a nozzle-type deposition apparatus, and more specifically, to supplying raw materials for pattern deposition to pattern deposition as required and performing deposition, minimizing the usage amount of the raw materials, and supplying the raw materials only to areas where pattern formation is required. The raw material can be deposited in a precise pattern and prevent the spread of the raw material. It can prevent the raw material from being deposited in other parts at the root. The heated gas can prevent the clogging of the exhaust pipe and nozzle that supplies the raw material, and the raw material can be supplied through the nozzle. Therefore, the nozzle-type deposition device of the deposition device can be constructed simply and effectively.
Description
本發明涉及為了在基板上形成圖案，吐出用於形成圖案的原料並且照射雷射進行沉積的沉積裝置。更詳細地，在基板上形成用於各種電路配線的圖案，但是，以往這些電路圖案是在如化學氣相沉積裝置（Chemical Vapor Deposition, CVD）的大規模設備中形成，但本發明涉及在普通的大氣環境下，在基板上形成微細的電路圖案的沉積裝置。The present invention relates to a deposition device that discharges a raw material for forming a pattern and irradiates it with laser to deposit it in order to form a pattern on a substrate. In more detail, patterns for various circuit wirings are formed on the substrate. However, these circuit patterns have been formed in large-scale equipment such as chemical vapor deposition equipment (Chemical Vapor Deposition, CVD) in the past. However, the present invention relates to conventional circuit patterns. A deposition device that forms fine circuit patterns on a substrate in an atmospheric environment.
薄膜圖案形成在用於驅動含有半導體晶片並包括LCD、OLED的平板顯示器的基板上，並且薄膜圖案通常使用諸如CVD的大規模設備進行沉積。尤其，通常是通過利用遮罩的曝光、蝕刻、沉積固定來製造奈米級或微米級單位的微細的圖案。Thin film patterns are formed on substrates used to drive flat panel displays containing semiconductor wafers and including LCDs, OLEDs, and are typically deposited using large-scale equipment such as CVD. In particular, fine patterns in units of nanometers or micrometers are usually produced by exposure, etching, and deposition fixation using masks.
在包括LCD、OLED的平板顯示器中，一般都是在基板上沉積用於表示影像發光的構造和用於像素的開/關的配線電路，但是，形成電路圖案的基板由於各種原因會出現如微細的電路的斷線/短路等缺陷，並且用於修復這些缺陷的修復過程是必不可少的。對於修復製程，需要切割或連接形成在基板上的圖案。在連接圖案的過程中，需要沉積微細的圖案，但是，以往將形成圖案的金屬原料供應到包括具有缺陷的一定區域，並對需要沉積圖案的部位照射雷射從而進行沉積。In flat panel displays including LCD and OLED, structures for expressing image light emission and wiring circuits for turning on/off pixels are generally deposited on the substrate. However, the substrate on which the circuit pattern is formed may have fine particles due to various reasons. of circuits have defects such as broken wires/short circuits, and a repair process for repairing these defects is essential. For the repair process, the pattern formed on the substrate needs to be cut or connected. In the process of connecting patterns, it is necessary to deposit a fine pattern. However, in the past, the metal raw material for forming the pattern was supplied to a certain area including the defect, and the area where the pattern was to be deposited was irradiated with laser to deposit.
韓國註冊專利第10-0739443號公開一種以往的薄膜圖案沉積裝置，其揭露了在薄膜沉積用腔內供應金屬原料氣體以形成局部金屬原料環境，並在需要形成圖案的位置照射雷射進行沉積的裝置。這種薄膜圖案沉積裝置不是在大規模的腔內形成，而是在大氣中的某些區域形成金屬原料環境，從而具有有效地進行局部薄膜沉積的優點，但是一定的區域內必須形成為金屬原料環境，因此，金屬原料的使用量過多，且為了形成金屬原料環境，需要額外的元件，如氣幕，並且隨著在一定區域內形成金屬原料環境，在不必要的部分沉積金屬原料，從而存在薄膜圖案形成過程中引起另一個缺陷的問題，並且在有效沉積微細的圖案當中存在限制，還存在可能損壞如柔性基板的易受熱的基板的問題。Korean registered patent No. 10-0739443 discloses a conventional thin film pattern deposition device, which discloses a method of supplying a metal raw material gas in a thin film deposition chamber to form a local metal raw material environment, and irradiating laser at the location where the pattern needs to be formed for deposition. device. This thin film pattern deposition device is not formed in a large-scale cavity, but forms a metal raw material environment in certain areas in the atmosphere, thus having the advantage of effectively performing local thin film deposition. However, a certain area must be formed into a metal raw material environment. environment, therefore, excessive amounts of metal raw materials are used, and in order to form a metal raw material environment, additional elements such as air curtains are required, and as a metal raw material environment is formed in a certain area, metal raw materials are deposited in unnecessary parts, thereby existing Another problem is that defects are caused during the thin film patterning process, and there are limitations in effectively depositing fine patterns, and there is also a problem that substrates that are susceptible to heat such as flexible substrates may be damaged.
＜技術問題＞＜Technical issues＞
為了解決上述的問題，本發明提供一種噴嘴型沉積裝置，將用於沉積圖案的原料按所需提供於圖案沉積，並進行沉積，可最小化原料的使用量，並且根據僅在需要形成圖案的部位供給原料，從而可進行精確的圖案沉積，並防止原料的擴散，可從根源上防止原料沉積到其他部位，利用加熱氣體可防止供給原料的排管及噴嘴的堵塞，並且根據以噴嘴方式供給原料，從而可簡易並有效地構成沉積裝置。 ＜技術方案＞ In order to solve the above-mentioned problems, the present invention provides a nozzle-type deposition device that supplies raw materials for pattern deposition to the pattern deposition as needed and performs deposition, thereby minimizing the usage of raw materials and forming patterns only when needed. The raw material is supplied to each position, thereby enabling precise pattern deposition and preventing the spread of the raw material. It can prevent the raw material from being deposited in other parts from the source. The use of heated gas can prevent the clogging of the exhaust pipe and nozzle supplying the raw material, and supply the raw material in the form of a nozzle. raw materials, so that the deposition device can be constructed simply and effectively. ＜Technical Solution＞
為了達到上述的目的，本發明的噴嘴型沉積裝置，用於在基板上沉積圖案，所述噴嘴型沉積裝置包括：雷射模組，照射雷射，用於在所述基板上形成圖案；第一噴嘴，吐出欲沉積的原料，用於在所述基板上沉積圖案；第二噴嘴，形成在所述第一噴嘴的外框部，噴射以預定的溫度加熱的氣體；噴嘴外殼，在內部收納所述第一噴嘴及第二噴嘴；以及加熱部，收納在所述噴嘴外殼內部用於加熱所述第一噴嘴及第二噴嘴。In order to achieve the above objects, the nozzle-type deposition device of the present invention is used to deposit patterns on a substrate. The nozzle-type deposition device includes: a laser module, irradiating laser, and used to form patterns on the substrate; A nozzle that spits out the raw material to be deposited for depositing patterns on the substrate; a second nozzle that is formed on the outer frame of the first nozzle that injects gas heated at a predetermined temperature; a nozzle housing that is stored inside The first nozzle and the second nozzle; and a heating part housed inside the nozzle housing for heating the first nozzle and the second nozzle.
另外，所述第一噴嘴插入並安裝在第二噴嘴的內部，從所述第二噴嘴噴出的氣體沿著第一噴嘴的外框部被噴射。In addition, the first nozzle is inserted and installed inside the second nozzle, and the gas ejected from the second nozzle is ejected along the outer frame of the first nozzle.
另外，所述第一噴嘴從第二噴嘴的末端按預定的長度被突出地設置，所述第二噴嘴從所述噴嘴外殼的末端按預定的長度被突出地設置。In addition, the first nozzle is protruded by a predetermined length from the end of the second nozzle, and the second nozzle is protruded by a predetermined length from the end of the nozzle housing.
另外，通過所述第二噴嘴噴出的氣體沿第一噴嘴的外框部被噴射，噴射至比沉積到所述基板的圖案更廣的預定的一定區域。In addition, the gas ejected through the second nozzle is ejected along the outer frame of the first nozzle to a predetermined certain area wider than the pattern deposited on the substrate.
另外，從所述第一噴嘴噴射的原料是包含鎢、鈷的金屬粉末，從所述第二噴嘴噴射的氣體是包含氬的惰性氣體。In addition, the raw material injected from the first nozzle is a metal powder containing tungsten and cobalt, and the gas injected from the second nozzle is an inert gas containing argon.
另外，所述噴嘴外殼是由金屬材料形成的塊狀，所述噴嘴型沉積裝置還包括：收納孔，用於收納所述第一噴嘴、第二噴嘴及加熱部的兩個以上。In addition, the nozzle housing is in a block shape formed of a metal material, and the nozzle-type deposition device further includes a storage hole for accommodating two or more of the first nozzle, the second nozzle, and the heating part.
另外，在所述噴嘴外殼的外框部的部分或者全部配置熱遮罩部件，用於防止從噴嘴外殼產生的熱傳遞到外部。In addition, a heat shield member is disposed on part or all of the outer frame of the nozzle housing to prevent heat generated from the nozzle housing from being transferred to the outside.
另外，所述噴嘴型沉積裝置，進一步包括：吸入部，吸入從所述第一噴嘴及第二噴嘴吐出/噴出的原料及氣體中用於沉積圖案後剩餘的原料及氣體。In addition, the nozzle-type deposition device further includes a suction part for sucking in the raw materials and gases remaining after being used to deposit patterns among the raw materials and gases ejected/discharged from the first nozzle and the second nozzle.
另外，所述吸入部以形成在基板的圖案為中心，在與所述第一噴嘴及第二噴嘴相對的位置以曲線形態配置。In addition, the suction portion is arranged in a curved shape at a position facing the first nozzle and the second nozzle, centered on the pattern formed on the substrate.
另外，所述第一噴嘴及第二噴嘴傾斜地安裝在基板，在所述吸入部形成兩個以上的吸入流路，所述吸入流路用於吸入從所述第一噴嘴及第二噴嘴吐出/噴出的原料及氣體中用於沉積圖案後剩餘的原料及氣體，並且所述吸入流路被配置成具有所述第一噴嘴及第二噴嘴的對稱的傾斜度。 ＜發明效果＞ In addition, the first nozzle and the second nozzle are installed obliquely on the substrate, and two or more suction flow paths are formed in the suction part, and the suction flow path is used to suck in the / discharged from the first nozzle and the second nozzle. Among the ejected raw materials and gases, the remaining raw materials and gases are used for pattern deposition, and the suction flow path is configured to have a symmetrical inclination of the first nozzle and the second nozzle. ＜Effects of the invention＞
如上所述構成的本發明，根據以噴嘴形態供給沉積所需的原料，可最小化原料的使用量，並具有可極小化浪費原料的效果。The present invention configured as described above has the effect of supplying raw materials required for deposition in the form of a nozzle, thereby minimizing the amount of raw materials used and minimizing waste of raw materials.
另外，根據通過噴嘴向圖案沉積所需的部位供給原料，可精確、準確地形成微細的圖案。In addition, by supplying raw materials through the nozzle to the parts required for pattern deposition, fine patterns can be formed accurately and accurately.
另外，將加熱氣體不僅供給到供給原料的噴嘴的外框部，而且供給到形成沉積的一定區域，從而可從根源上防止噴嘴堵塞及在不必要的部位沉積原料。In addition, the heating gas is supplied not only to the outer frame of the nozzle that supplies the raw material, but also to a certain area where the deposition is formed, thereby preventing the nozzle from being clogged and the raw material from being deposited in unnecessary locations.
另外，通過噴嘴形態的沉積裝置可以使沉積裝置的構造小型化，從而沉積裝置的運營及安裝方便，並且可有效地執行維護。In addition, the structure of the deposition device can be miniaturized by the nozzle-shaped deposition device, so that operation and installation of the deposition device can be facilitated, and maintenance can be performed efficiently.
以下，參照附圖對本發明的噴嘴型沉積裝置進行詳細地說明。Hereinafter, the nozzle type deposition apparatus of the present invention will be described in detail with reference to the drawings.
圖1是顯示根據本發明一實施例的噴嘴型沉積裝置的立體圖；圖2是顯示根據本發明一實施例在噴嘴型沉積裝置中的第一噴嘴和第二噴嘴的放大立體圖；圖3是顯示通過本發明的噴嘴型沉積裝置形成圖案的視圖；圖4是顯示根據本發明一實施例的噴嘴型沉積裝置的吸入部的立體圖；以及圖5是顯示根據本發明一實施例包含吸入部的噴嘴型沉積裝置形成圖案沉積的視圖。FIG. 1 is a perspective view showing a nozzle-type deposition device according to an embodiment of the present invention; FIG. 2 is an enlarged perspective view showing a first nozzle and a second nozzle in a nozzle-type deposition device according to an embodiment of the present invention; FIG. 3 is a perspective view showing a nozzle-type deposition device according to an embodiment of the present invention. A view of a pattern formed by a nozzle-type deposition device according to the present invention; FIG. 4 is a perspective view showing a suction portion of a nozzle-type deposition device according to an embodiment of the present invention; and FIG. 5 is a nozzle including a suction portion according to an embodiment of the present invention. A view of a deposition device forming pattern deposition.
沉積圖案，尤其是沉積微細的圖案的製程在如CVD的大規模設備形成，並且以往具有在大氣中沉積薄膜的薄膜沉積腔裝置，但是相比於現有的CVD設備雖然構造簡單，但是需要形成局部的金屬原料環境，並且除了用於圖案沉積的少量的金屬原料之外，剩餘的金屬原料被扔掉，因此存在浪費金屬原料的嚴重問題。另外，為了形成局部的金屬原料環境，需要用於阻斷與大氣的附加構造，因此，具有構造複雜的問題。The deposition pattern, especially the deposition of fine patterns, is formed in large-scale equipment such as CVD. In the past, there was a thin film deposition chamber device for depositing thin films in the atmosphere. However, compared to the existing CVD equipment, although the structure is simple, it requires localized formation. The environment of metal raw materials, and except for a small amount of metal raw materials used for pattern deposition, the remaining metal raw materials are thrown away, so there is a serious problem of wasting metal raw materials. In addition, in order to form a local metal raw material environment, an additional structure for blocking the atmosphere is required, so there is a problem of a complicated structure.
本發明的噴嘴型沉積裝置包括：雷射模組100，對在需要沉積形成圖案的基板10上的原料30照射用於加熱並進行沉積的雷射；第一噴嘴200，以噴嘴形態吐出作為在基板10上用於沉積圖案的原材料的原料30；第二噴嘴300，防止向第一噴嘴200移動的原料30的硬化而可能發生的噴嘴堵塞並且為了將包括沉積圖案的部位的一定區域50與外部斷絕，形成在第一噴嘴200的外框部並噴射以預定的溫度加熱的加熱氣體40；噴嘴外殼400，在內部收納第一噴嘴200及第二噴嘴300；及加熱部500，收納在噴嘴外殼400內部，用於加熱第一噴嘴200及第二噴嘴300。The nozzle-type deposition device of the present invention includes: a laser module 100, which irradiates the raw material 30 on the substrate 10 that needs to be deposited to form a pattern with a laser for heating and deposition; a first nozzle 200, which spits out as a The raw material 30 of the raw material for depositing the pattern on the substrate 10; the second nozzle 300 prevents the nozzle clogging that may occur due to the hardening of the raw material 30 moving to the first nozzle 200 and in order to separate a certain area 50 including the portion of the deposited pattern from the outside. The cutoff is formed on the outer frame of the first nozzle 200 and injects the heating gas 40 heated at a predetermined temperature; the nozzle housing 400 houses the first nozzle 200 and the second nozzle 300 inside; and the heating part 500 is housed in the nozzle housing. 400 is used to heat the first nozzle 200 and the second nozzle 300 .
本發明的雷射模組100是從第一噴嘴200向在基板10上需要沉積的位置吐出的原料30供給雷射，所述雷射用於將原料30進行加熱並硬化，從而進行沉積的構造。原料30根據在基板上需要形成的圖案而不同，例如，使用鎢（W）時，需照射對應於此的雷射。因此，根據雷射的波長、輸出、脈衝寬度等原料30的材料，有必要選擇可供給適合的雷射的雷射模組100。另外，根據原料30的材料，為了供給適當的雷射，選擇雷射模組100之後，為了向在基板10沉積圖案的位置照射雷射，也可通過光學模組（圖中未示）變更雷射的路徑。當然，可通過光學模組變更雷射的路徑，如果基板10的大小較小，則也可移動基板10。The laser module 100 of the present invention has a structure in which a laser is supplied from a first nozzle 200 to a raw material 30 ejected from a position on a substrate 10 that needs to be deposited. The laser is used to heat and harden the raw material 30 to perform deposition. . The raw material 30 differs according to the pattern to be formed on the substrate. For example, when tungsten (W) is used, a laser corresponding to this needs to be irradiated. Therefore, it is necessary to select the laser module 100 that can provide a suitable laser according to the material of the raw material 30 such as the wavelength, output, and pulse width of the laser. In addition, according to the material of the raw material 30, in order to supply an appropriate laser, after selecting the laser module 100, in order to irradiate the laser to the position where the pattern is deposited on the substrate 10, the laser can also be changed through the optical module (not shown in the figure). shooting path. Of course, the path of the laser can be changed through the optical module, and if the size of the substrate 10 is small, the substrate 10 can also be moved.
本發明的第一噴嘴200是將原料30吐出至基板10上需要沉積的位置的構造。通過第一噴嘴200吐出的原料30是來自如起泡器（圖中未示）氣化固體金屬或者變換為粉末形態，通過第一噴嘴200後端的原料連接部210接收。由起泡器變換的氣體或者粉末化的原料通過排管流路傳遞至第一噴嘴200，通過排管流路及第一噴嘴200吐出至基板上的原料30根據材料而不同，但是，具有降到一定的溫度以下時硬化的特性。即，為了防止排管流路及第一噴嘴200的堵塞，維持一定溫度以上是非常重要的。第一噴嘴200的材料可根據吐出的原料30而不同，但是，為了有利於維持到一定的溫度以上，較佳使用熱傳導率高並且耐久性高的金屬材料。當然，為了防止原料30的硬化，較佳使用表面粗糙度小的材料。另外，噴嘴的直徑根據沉積的圖案的寬度而不同，但是製作成微細是有利的。但是，噴嘴的直徑越小，微量的原料30硬化也會產生噴嘴堵塞，因此，較佳考慮圖案的寬度和需吐出的原料30的材料等進行確定。The first nozzle 200 of the present invention is configured to discharge the raw material 30 to a position on the substrate 10 where deposition is required. The raw material 30 ejected through the first nozzle 200 is vaporized solid metal from a bubbler (not shown in the figure) or converted into powder form, and is received through the raw material connection part 210 at the rear end of the first nozzle 200 . The gas converted by the bubbler or the powdered raw material is transferred to the first nozzle 200 through the exhaust pipe flow path, and the raw material 30 discharged onto the substrate through the exhaust pipe flow path and the first nozzle 200 varies depending on the material, but has a reduced The property of hardening below a certain temperature. That is, in order to prevent the discharge pipe flow path and the first nozzle 200 from clogging, it is very important to maintain a temperature above a certain level. The material of the first nozzle 200 may vary depending on the raw material 30 to be discharged. However, in order to facilitate maintaining the temperature above a certain level, it is preferable to use a metal material with high thermal conductivity and high durability. Of course, in order to prevent the raw material 30 from hardening, it is better to use a material with small surface roughness. In addition, the diameter of the nozzle varies depending on the width of the pattern to be deposited, but it is advantageous to make it fine. However, the smaller the diameter of the nozzle, the hardening of a trace amount of the raw material 30 will cause clogging of the nozzle. Therefore, it is better to determine the width of the pattern and the material of the raw material 30 to be discharged.
本發明的第二噴嘴300是配置在第一噴嘴200的外框部並根據第一噴嘴200的外框部噴射按預定的溫度加熱的加熱氣體40的構造。如上所述，第一噴嘴200是作為氣化或者粉末形態的原料30通過的構造，降到一定溫度以下時，原料30被硬化從而發生噴嘴堵塞的現象。第二噴嘴300是為了防止這些噴嘴的堵塞，向第一噴嘴200的外框部噴射按一定的溫度加熱的加熱氣體40，從而將第一噴嘴200維持到原料30不發生硬化的溫度以上的構造。加熱氣體40通過第二噴嘴300後端的加熱氣體連接部310接收。例如，如圖1、圖2所示，在第二噴嘴300內部插入安裝第一噴嘴200，則供給到第二噴嘴300的加熱氣體40整體上加熱第一噴嘴200，因此，如上所述的第二噴嘴300可從根源上防止由原料30的硬化導致的噴嘴堵塞。當然，在第一噴嘴200的外框部配置多個第二噴嘴300，也可得到相同的效果，但是，相比於將第一噴嘴200插入到內部效果降低。另外，如圖3所示，從第二噴嘴300噴射的加熱氣體40沿著第一噴嘴200的外框部到達基板10進行噴射，則用於沉積圖案並且剩餘的原料30被硬化在圖案之外的部位，從而可從根源上防止產生缺陷。另外，沉積圖案時形成局部的原料30的環境是有利的，因此，也可具有與外部阻斷的效果。通過第二噴嘴300噴射的加熱氣體40防止與原料30的反應，同時極大化與外部的阻斷效果，較佳使用惰性氣體。另外，較佳地，使用分子量大的惰性氣體氬氣（Ar）防止加熱氣體40的溫度急劇降低，並且提高與外部的阻斷效果。The second nozzle 300 of the present invention is arranged on the outer frame of the first nozzle 200 and injects the heating gas 40 heated at a predetermined temperature based on the outer frame of the first nozzle 200 . As described above, the first nozzle 200 has a structure through which the raw material 30 in the form of vaporization or powder passes. When the temperature drops below a certain level, the raw material 30 is hardened and the nozzle is clogged. In order to prevent clogging of these nozzles, the second nozzle 300 injects the heating gas 40 heated at a certain temperature into the outer frame of the first nozzle 200 to maintain the first nozzle 200 at a temperature higher than the temperature at which the raw material 30 does not harden. . The heating gas 40 is received through the heating gas connection portion 310 at the rear end of the second nozzle 300 . For example, as shown in FIGS. 1 and 2 , if the first nozzle 200 is inserted and installed inside the second nozzle 300 , the heating gas 40 supplied to the second nozzle 300 will heat the first nozzle 200 as a whole. Therefore, as described above, the first nozzle 200 will be heated. The two nozzles 300 can fundamentally prevent nozzle clogging caused by the hardening of the raw material 30 . Of course, the same effect can be obtained by arranging a plurality of second nozzles 300 in the outer frame of the first nozzle 200, but the effect is lower than that of inserting the first nozzle 200 into the interior. In addition, as shown in FIG. 3 , the heated gas 40 injected from the second nozzle 300 reaches the substrate 10 along the outer frame of the first nozzle 200 for injection, and is used to deposit the pattern and the remaining raw material 30 is hardened outside the pattern. parts, thereby preventing defects from occurring at the source. In addition, the environment where the local raw material 30 is formed when depositing the pattern is favorable, and therefore, it can also have the effect of blocking from the outside. The heating gas 40 injected through the second nozzle 300 prevents reaction with the raw material 30 and maximizes the blocking effect with the outside. It is preferable to use an inert gas. In addition, it is preferable to use argon (Ar), an inert gas with a large molecular weight, to prevent the temperature of the heating gas 40 from rapidly decreasing and to improve the blocking effect from the outside.
本發明的噴嘴外殼400是形成本發明的噴嘴型沉積裝置的本體，並收納第一噴嘴200和第二噴嘴300及下述的加熱部500的構造。噴嘴外殼400的內部需收納包括第一噴嘴200直至加熱部500，因此，當然需要包括固定第一噴嘴200、第二噴嘴300及加熱部500的工具。將噴嘴外殼400由一個塊狀製作之後，配置可收納第一噴嘴200及第二噴嘴300和加熱部500的收納孔410，則具有將從加熱部500產生的熱可完全地傳遞至第一噴嘴200及第二噴嘴300的優點。另外，不需要另外的用於固定的工具，並且僅將一個噴嘴外殼400固定在設備即可，因此具有便於安裝及維護的優點。只是，從加熱部500產生的熱傳遞至整個噴嘴外殼400的本體，因此，較佳地，將熱遮罩部件420配置在噴嘴外殼400的外部，從而使熱無法傳遞到設備。The nozzle housing 400 of the present invention forms the main body of the nozzle-type deposition apparatus of the present invention and houses the first nozzle 200 and the second nozzle 300 as well as the heating unit 500 described below. The interior of the nozzle housing 400 needs to accommodate the first nozzle 200 to the heating part 500. Therefore, it is of course necessary to include tools for fixing the first nozzle 200, the second nozzle 300 and the heating part 500. After the nozzle housing 400 is made from one block, and the storage hole 410 that can accommodate the first nozzle 200 and the second nozzle 300 and the heating part 500 is configured, the heat generated from the heating part 500 can be completely transferred to the first nozzle. 200 and the advantages of the second nozzle 300. In addition, no additional tools for fixing are required, and only one nozzle housing 400 can be fixed to the device, so it has the advantage of easy installation and maintenance. However, the heat generated from the heating part 500 is transferred to the entire body of the nozzle housing 400. Therefore, it is preferable to dispose the heat shield member 420 outside the nozzle housing 400 so that the heat cannot be transferred to the device.
本發明的加熱部500是將第一噴嘴200及第二噴嘴300加熱至一定溫度以上的構造。即使由第二噴嘴300供給加熱至一定溫度以上的加熱氣體40，第二噴嘴300具有自身的長度，並且到基板10時加熱氣體40需維持並達到一定溫度以上，因此，為了維持加熱氣體40的溫度需要加熱部500。另外，較佳地，加熱部500不是僅安裝在一側，而是將以第二噴嘴300為中心對稱地安裝。只是，安裝多個可極大化加熱效果，但是製造費用變高，因此，根據精確的溫度調整和製造費用，較佳地，根據安裝本發明的噴嘴型沉積裝置的環境進行選擇。The heating unit 500 of the present invention has a structure that heats the first nozzle 200 and the second nozzle 300 to a temperature equal to or higher than a certain temperature. Even if the heating gas 40 heated to a certain temperature or above is supplied from the second nozzle 300 , the second nozzle 300 has its own length, and the heating gas 40 needs to maintain and reach above a certain temperature when reaching the substrate 10 . Therefore, in order to maintain the temperature of the heating gas 40 The temperature requires the heating unit 500. In addition, preferably, the heating part 500 is not installed only on one side, but is installed symmetrically with the second nozzle 300 as the center. However, installing a plurality of devices can maximize the heating effect, but the manufacturing cost becomes high. Therefore, it is preferable to select according to the environment in which the nozzle type deposition device of the present invention is installed based on precise temperature adjustment and manufacturing cost.
本發明的吸入部600是吸入從第一噴嘴200吐出的原料30用於沉積圖案後剩餘的原料30及噴射至第二噴嘴300的加熱氣體40，並向外部排出的構造。如圖4所示的一示例，較佳地，吸入部600配置成圍繞第二噴嘴300的外框部的形態。另外，為了有效地吸入被吸入的原料30及加熱氣體40，較佳地，吸入流路610形成多個。另外，為了圖案20的沉積，需照射雷射，因此，較佳地，為了精確的沉積，將第一噴嘴200傾斜地安裝在基板之後，以垂直於基板照射雷射。因此，吸入流路610對應於傾斜的第一噴嘴200被傾斜地形成，則具有不向外部散開並且可有效地吸入的效果。另外，如圖5所示，將噴嘴外殼400傾斜地安裝之後，將吸入部600安裝在位於相對面，則具有可更有效地吸入原料30和加熱氣體40的效果。The suction part 600 of the present invention is a structure that sucks in the raw material 30 remaining after the raw material 30 discharged from the first nozzle 200 is used for pattern deposition and the heated gas 40 sprayed to the second nozzle 300, and discharges the raw material 30 to the outside. As shown in an example in FIG. 4 , preferably, the suction part 600 is arranged in a shape surrounding the outer frame part of the second nozzle 300 . In addition, in order to effectively inhale the sucked raw material 30 and the heated gas 40, it is preferable to form a plurality of suction flow paths 610. In addition, in order to deposit the pattern 20, a laser needs to be irradiated. Therefore, preferably, for accurate deposition, the first nozzle 200 is installed obliquely behind the substrate to irradiate the laser perpendicularly to the substrate. Therefore, if the suction flow path 610 is formed to be inclined corresponding to the inclined first nozzle 200, it has the effect of effectively inhaling the air without spreading to the outside. In addition, as shown in FIG. 5 , after the nozzle housing 400 is installed obliquely, and the suction part 600 is installed on the opposite surface, there is an effect that the raw material 30 and the heating gas 40 can be sucked in more effectively.
10:基板 20:圖案 30:原料 40:加熱氣體 50:一定區域 100:雷射模組 200:第一噴嘴 210:原料連接部 300:第二噴嘴 310:加熱氣體連接部 400:噴嘴外殼 410:收納孔 420:熱遮罩部件 500:加熱部 600:吸入部 610:吸入流路 10:Substrate 20:Pattern 30:Raw materials 40: Heating gas 50: Certain area 100:Laser module 200: first nozzle 210: Raw material connection part 300: Second nozzle 310: Heating gas connection part 400:Nozzle housing 410: Storage hole 420:Thermal mask parts 500:Heating department 600: Inhalation part 610: Suction flow path
圖1是顯示根據本發明一實施例的噴嘴型沉積裝置的立體圖； 圖2是顯示根據本發明一實施例在噴嘴型沉積裝置中的第一噴嘴和第二噴嘴的放大立體圖； 圖3是顯示通過本發明的噴嘴型沉積裝置形成圖案的視圖； 圖4是顯示根據本發明一實施例的噴嘴型沉積裝置的吸入部的立體圖；以及 圖5是顯示根據本發明一實施例包含吸入部的噴嘴型沉積裝置形成圖案沉積的視圖。 Figure 1 is a perspective view showing a nozzle type deposition device according to an embodiment of the present invention; 2 is an enlarged perspective view showing a first nozzle and a second nozzle in a nozzle-type deposition device according to an embodiment of the present invention; 3 is a view showing pattern formation by the nozzle-type deposition device of the present invention; 4 is a perspective view showing the suction part of the nozzle-type deposition device according to an embodiment of the present invention; and FIG. 5 is a view showing pattern deposition using a nozzle-type deposition device including a suction part according to an embodiment of the present invention.
200:第一噴嘴 200: first nozzle
210:原料連接部 210: Raw material connection part
300:第二噴嘴 300: Second nozzle
310:加熱氣體連接部 310: Heating gas connection part
400:噴嘴外殼 400:Nozzle housing
410:收納孔 410: Storage hole
420:熱遮罩部件 420:Thermal mask parts
500:加熱部 500:Heating department
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| TW200926282A (en) * | 2007-05-10 | 2009-06-16 | Linde Inc | Laser activated fluorine treatment of silicon substrates |
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| JP3082716B2 (en) * | 1997-08-08 | 2000-08-28 | 日本電気株式会社 | Laser CVD apparatus and method |
| KR102100801B1 (en) * | 2018-04-12 | 2020-04-14 | 참엔지니어링(주) | Deposition apparatus and method |
| KR102310047B1 (en) * | 2019-06-07 | 2021-10-08 | 참엔지니어링(주) | Deposition apparatus |
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| TW200926282A (en) * | 2007-05-10 | 2009-06-16 | Linde Inc | Laser activated fluorine treatment of silicon substrates |
| TWI716587B (en) * | 2016-05-12 | 2021-01-21 | 南韓商燦美工程股份有限公司 | Forming apparatus for pattern line |
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