TWI829864B - 光電陰極發射器及其操作方法 - Google Patents
光電陰極發射器及其操作方法 Download PDFInfo
- Publication number
- TWI829864B TWI829864B TW109104970A TW109104970A TWI829864B TW I829864 B TWI829864 B TW I829864B TW 109104970 A TW109104970 A TW 109104970A TW 109104970 A TW109104970 A TW 109104970A TW I829864 B TWI829864 B TW I829864B
- Authority
- TW
- Taiwan
- Prior art keywords
- photocathode
- layer
- array
- plasmonic
- emitter
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000010894 electron beam technology Methods 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 20
- 239000007769 metal material Substances 0.000 claims description 17
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 32
- 238000007689 inspection Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000013500 data storage Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 241000769223 Thenea Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/063—Geometrical arrangement of electrodes for beam-forming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3425—Metals, metal alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06333—Photo emission
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962806822P | 2019-02-17 | 2019-02-17 | |
| US62/806,822 | 2019-02-17 | ||
| US16/789,650 | 2020-02-13 | ||
| US16/789,650 US11495428B2 (en) | 2019-02-17 | 2020-02-13 | Plasmonic photocathode emitters at ultraviolet and visible wavelengths |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202101505A TW202101505A (zh) | 2021-01-01 |
| TWI829864B true TWI829864B (zh) | 2024-01-21 |
Family
ID=72043672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109104970A TWI829864B (zh) | 2019-02-17 | 2020-02-17 | 光電陰極發射器及其操作方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11495428B2 (https=) |
| EP (1) | EP3912182A4 (https=) |
| JP (2) | JP7329609B2 (https=) |
| KR (1) | KR102615663B1 (https=) |
| TW (1) | TWI829864B (https=) |
| WO (1) | WO2020168139A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11217416B2 (en) | 2019-09-27 | 2022-01-04 | Kla Corporation | Plasmonic photocathode emitters |
| CN112420466B (zh) * | 2020-10-29 | 2021-11-19 | 清华大学 | 表面等离激元诱导的电子发射源 |
| CN112908807B (zh) * | 2021-01-13 | 2024-07-02 | 陕西理工大学 | 一种光电阴极及其应用 |
| KR102714203B1 (ko) | 2021-12-23 | 2024-10-04 | 계명대학교 산학협력단 | 플라즈몬 나노입자를 포함하는 박막형 광학소재 제조방법 |
| CN119252723B (zh) * | 2024-09-26 | 2025-10-24 | 杭州邦齐州科技有限公司 | 一种光电阴极用级联增强型光学输入窗 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0862792B1 (en) * | 1995-11-22 | 2004-06-02 | Intevac, Inc. | Integrated photocathode |
| US20050285128A1 (en) * | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
| TW201701501A (zh) * | 2015-05-21 | 2017-01-01 | 克萊譚克公司 | 包括在具有硼層之矽基板上之場發射極陣列之光電陰極 |
| US20170076907A1 (en) * | 2015-09-11 | 2017-03-16 | Kabushiki Kaisha Toshiba | Electron beam irradiation device |
| TW201830448A (zh) * | 2016-12-20 | 2018-08-16 | 美商克萊譚克公司 | 具有釕塗層之電子束發射器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5576559A (en) * | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
| US6538256B1 (en) * | 2000-08-17 | 2003-03-25 | Applied Materials, Inc. | Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance |
| US7015467B2 (en) | 2002-10-10 | 2006-03-21 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
| US7301263B2 (en) | 2004-05-28 | 2007-11-27 | Applied Materials, Inc. | Multiple electron beam system with electron transmission gates |
| JP4939033B2 (ja) * | 2005-10-31 | 2012-05-23 | 浜松ホトニクス株式会社 | 光電陰極 |
| JP4995660B2 (ja) * | 2007-07-30 | 2012-08-08 | 浜松ホトニクス株式会社 | 光電陰極 |
| CN102187425B (zh) | 2008-10-16 | 2013-11-06 | 小利兰·斯坦福大学托管委员会 | 光子增强型热离子发射 |
| US8196217B2 (en) | 2009-08-14 | 2012-06-05 | The Board Of Trustees Of The Leland Stanford Junior University | Tip-enhanced resonant apertures |
| KR101038923B1 (ko) | 2010-02-02 | 2011-06-03 | 전북대학교산학협력단 | 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법 |
| JP2012069459A (ja) * | 2010-09-27 | 2012-04-05 | Hamamatsu Photonics Kk | 撮像装置 |
| KR101182359B1 (ko) | 2010-12-13 | 2012-09-20 | 한국과학기술원 | 메탈 나노 입자의 표면 플라즈몬 공명 특성을 적용하여 강화된 음극선 발광 형광체의 구조 |
| WO2012126792A1 (en) | 2011-03-18 | 2012-09-27 | Ecole Polytechnique Federale De Lausanne (Epfl) | Electron beam apparatus |
| US9287057B2 (en) | 2013-06-05 | 2016-03-15 | City University Of Hong Kong | Plasmonic enhanced tandem dye-sensitized solar cell with metallic nanostructures |
| KR102320646B1 (ko) | 2014-07-24 | 2021-11-04 | 유니버셜 디스플레이 코포레이션 | 향상층(들)을 갖는 oled 디바이스 |
| US9418814B2 (en) | 2015-01-12 | 2016-08-16 | Uchicago Argonne, Llc | Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond |
| US10074509B2 (en) | 2015-06-07 | 2018-09-11 | Purdue Research Foundation | Plasmon-excited electron beam array for complementary patterning |
| US9984846B2 (en) | 2016-06-30 | 2018-05-29 | Kla-Tencor Corporation | High brightness boron-containing electron beam emitters for use in a vacuum environment |
| JP6867568B2 (ja) | 2016-11-07 | 2021-04-28 | 国立大学法人東京工業大学 | ナノスケール光陰極電子源 |
| JP6501285B2 (ja) * | 2017-04-05 | 2019-04-17 | 株式会社Photo electron Soul | 電子線発生装置、および、電子線適用装置 |
| CN107275168B (zh) | 2017-06-06 | 2019-03-29 | 东南大学 | 一种基于氮化钛的新型纳米结构光阴极 |
| US10395884B2 (en) | 2017-10-10 | 2019-08-27 | Kla-Tencor Corporation | Ruthenium encapsulated photocathode electron emitter |
| US10535493B2 (en) | 2017-10-10 | 2020-01-14 | Kla-Tencor Corporation | Photocathode designs and methods of generating an electron beam using a photocathode |
| CN108231507B (zh) | 2017-12-12 | 2020-06-23 | 东南大学 | 一种基于新型纳米结构的光阴极及其制备方法 |
| CN108630510A (zh) | 2018-05-21 | 2018-10-09 | 南京理工大学 | 变掺杂GaN纳米线阵列光电阴极及其制备方法 |
| US10714295B2 (en) * | 2018-09-18 | 2020-07-14 | Kla-Tencor Corporation | Metal encapsulated photocathode electron emitter |
| US11217416B2 (en) * | 2019-09-27 | 2022-01-04 | Kla Corporation | Plasmonic photocathode emitters |
-
2020
- 2020-02-13 US US16/789,650 patent/US11495428B2/en active Active
- 2020-02-14 EP EP20754952.8A patent/EP3912182A4/en active Pending
- 2020-02-14 KR KR1020217029634A patent/KR102615663B1/ko active Active
- 2020-02-14 JP JP2021547727A patent/JP7329609B2/ja active Active
- 2020-02-14 WO PCT/US2020/018199 patent/WO2020168139A1/en not_active Ceased
- 2020-02-17 TW TW109104970A patent/TWI829864B/zh active
-
2023
- 2023-07-05 JP JP2023110436A patent/JP7599526B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0862792B1 (en) * | 1995-11-22 | 2004-06-02 | Intevac, Inc. | Integrated photocathode |
| US20050285128A1 (en) * | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
| TW201701501A (zh) * | 2015-05-21 | 2017-01-01 | 克萊譚克公司 | 包括在具有硼層之矽基板上之場發射極陣列之光電陰極 |
| US20170076907A1 (en) * | 2015-09-11 | 2017-03-16 | Kabushiki Kaisha Toshiba | Electron beam irradiation device |
| TW201830448A (zh) * | 2016-12-20 | 2018-08-16 | 美商克萊譚克公司 | 具有釕塗層之電子束發射器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7329609B2 (ja) | 2023-08-18 |
| JP2022521190A (ja) | 2022-04-06 |
| US11495428B2 (en) | 2022-11-08 |
| WO2020168139A9 (en) | 2020-09-24 |
| TW202101505A (zh) | 2021-01-01 |
| EP3912182A1 (en) | 2021-11-24 |
| KR102615663B1 (ko) | 2023-12-19 |
| WO2020168139A1 (en) | 2020-08-20 |
| US20200266019A1 (en) | 2020-08-20 |
| JP2023118869A (ja) | 2023-08-25 |
| EP3912182A4 (en) | 2022-12-28 |
| KR20210118223A (ko) | 2021-09-29 |
| JP7599526B2 (ja) | 2024-12-13 |
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