KR102615663B1 - 자외선 및 가시광선 파장의 플라즈몬 포토캐소드 이미터 - Google Patents

자외선 및 가시광선 파장의 플라즈몬 포토캐소드 이미터 Download PDF

Info

Publication number
KR102615663B1
KR102615663B1 KR1020217029634A KR20217029634A KR102615663B1 KR 102615663 B1 KR102615663 B1 KR 102615663B1 KR 1020217029634 A KR1020217029634 A KR 1020217029634A KR 20217029634 A KR20217029634 A KR 20217029634A KR 102615663 B1 KR102615663 B1 KR 102615663B1
Authority
KR
South Korea
Prior art keywords
photocathode
layer
emitter
plasmonic
plasmonic structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217029634A
Other languages
English (en)
Korean (ko)
Other versions
KR20210118223A (ko
Inventor
카테리나 이오아케이미디
길다르도 델가도
프랜시스 힐
개리 로페즈
미구엘 에이 곤잘레스
앨런 브로디
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20210118223A publication Critical patent/KR20210118223A/ko
Application granted granted Critical
Publication of KR102615663B1 publication Critical patent/KR102615663B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3425—Metals, metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
KR1020217029634A 2019-02-17 2020-02-14 자외선 및 가시광선 파장의 플라즈몬 포토캐소드 이미터 Active KR102615663B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962806822P 2019-02-17 2019-02-17
US62/806,822 2019-02-17
US16/789,650 2020-02-13
US16/789,650 US11495428B2 (en) 2019-02-17 2020-02-13 Plasmonic photocathode emitters at ultraviolet and visible wavelengths
PCT/US2020/018199 WO2020168139A1 (en) 2019-02-17 2020-02-14 Plasmonic photocathode emitters at ultraviolet and visible wavelengths

Publications (2)

Publication Number Publication Date
KR20210118223A KR20210118223A (ko) 2021-09-29
KR102615663B1 true KR102615663B1 (ko) 2023-12-19

Family

ID=72043672

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217029634A Active KR102615663B1 (ko) 2019-02-17 2020-02-14 자외선 및 가시광선 파장의 플라즈몬 포토캐소드 이미터

Country Status (6)

Country Link
US (1) US11495428B2 (https=)
EP (1) EP3912182A4 (https=)
JP (2) JP7329609B2 (https=)
KR (1) KR102615663B1 (https=)
TW (1) TWI829864B (https=)
WO (1) WO2020168139A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11217416B2 (en) 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters
CN112420466B (zh) * 2020-10-29 2021-11-19 清华大学 表面等离激元诱导的电子发射源
CN112908807B (zh) * 2021-01-13 2024-07-02 陕西理工大学 一种光电阴极及其应用
KR102714203B1 (ko) 2021-12-23 2024-10-04 계명대학교 산학협력단 플라즈몬 나노입자를 포함하는 박막형 광학소재 제조방법
CN119252723B (zh) * 2024-09-26 2025-10-24 杭州邦齐州科技有限公司 一种光电阴极用级联增强型光学输入窗

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170076907A1 (en) * 2015-09-11 2017-03-16 Kabushiki Kaisha Toshiba Electron beam irradiation device
US20180174794A1 (en) * 2016-12-20 2018-06-21 Kla-Tencor Corporation Electron Beam Emitters with Ruthenium Coating
WO2018186294A1 (ja) 2017-04-05 2018-10-11 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ 電子線発生装置、および、電子線適用装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US5912500A (en) * 1995-11-22 1999-06-15 Intevac, Inc. Integrated photocathode
US6538256B1 (en) * 2000-08-17 2003-03-25 Applied Materials, Inc. Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
US7015467B2 (en) 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
US20050285128A1 (en) 2004-02-10 2005-12-29 California Institute Of Technology Surface plasmon light emitter structure and method of manufacture
US7301263B2 (en) 2004-05-28 2007-11-27 Applied Materials, Inc. Multiple electron beam system with electron transmission gates
JP4939033B2 (ja) * 2005-10-31 2012-05-23 浜松ホトニクス株式会社 光電陰極
JP4995660B2 (ja) * 2007-07-30 2012-08-08 浜松ホトニクス株式会社 光電陰極
CN102187425B (zh) 2008-10-16 2013-11-06 小利兰·斯坦福大学托管委员会 光子增强型热离子发射
US8196217B2 (en) 2009-08-14 2012-06-05 The Board Of Trustees Of The Leland Stanford Junior University Tip-enhanced resonant apertures
KR101038923B1 (ko) 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
JP2012069459A (ja) * 2010-09-27 2012-04-05 Hamamatsu Photonics Kk 撮像装置
KR101182359B1 (ko) 2010-12-13 2012-09-20 한국과학기술원 메탈 나노 입자의 표면 플라즈몬 공명 특성을 적용하여 강화된 음극선 발광 형광체의 구조
WO2012126792A1 (en) 2011-03-18 2012-09-27 Ecole Polytechnique Federale De Lausanne (Epfl) Electron beam apparatus
US9287057B2 (en) 2013-06-05 2016-03-15 City University Of Hong Kong Plasmonic enhanced tandem dye-sensitized solar cell with metallic nanostructures
KR102320646B1 (ko) 2014-07-24 2021-11-04 유니버셜 디스플레이 코포레이션 향상층(들)을 갖는 oled 디바이스
US9418814B2 (en) 2015-01-12 2016-08-16 Uchicago Argonne, Llc Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond
US10748730B2 (en) * 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
US10074509B2 (en) 2015-06-07 2018-09-11 Purdue Research Foundation Plasmon-excited electron beam array for complementary patterning
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment
JP6867568B2 (ja) 2016-11-07 2021-04-28 国立大学法人東京工業大学 ナノスケール光陰極電子源
CN107275168B (zh) 2017-06-06 2019-03-29 东南大学 一种基于氮化钛的新型纳米结构光阴极
US10395884B2 (en) 2017-10-10 2019-08-27 Kla-Tencor Corporation Ruthenium encapsulated photocathode electron emitter
US10535493B2 (en) 2017-10-10 2020-01-14 Kla-Tencor Corporation Photocathode designs and methods of generating an electron beam using a photocathode
CN108231507B (zh) 2017-12-12 2020-06-23 东南大学 一种基于新型纳米结构的光阴极及其制备方法
CN108630510A (zh) 2018-05-21 2018-10-09 南京理工大学 变掺杂GaN纳米线阵列光电阴极及其制备方法
US10714295B2 (en) * 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11217416B2 (en) * 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170076907A1 (en) * 2015-09-11 2017-03-16 Kabushiki Kaisha Toshiba Electron beam irradiation device
JP2017053823A (ja) 2015-09-11 2017-03-16 株式会社東芝 電子線照射装置
US20180174794A1 (en) * 2016-12-20 2018-06-21 Kla-Tencor Corporation Electron Beam Emitters with Ruthenium Coating
WO2018186294A1 (ja) 2017-04-05 2018-10-11 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ 電子線発生装置、および、電子線適用装置

Also Published As

Publication number Publication date
JP7329609B2 (ja) 2023-08-18
JP2022521190A (ja) 2022-04-06
US11495428B2 (en) 2022-11-08
WO2020168139A9 (en) 2020-09-24
TW202101505A (zh) 2021-01-01
EP3912182A1 (en) 2021-11-24
WO2020168139A1 (en) 2020-08-20
US20200266019A1 (en) 2020-08-20
JP2023118869A (ja) 2023-08-25
TWI829864B (zh) 2024-01-21
EP3912182A4 (en) 2022-12-28
KR20210118223A (ko) 2021-09-29
JP7599526B2 (ja) 2024-12-13

Similar Documents

Publication Publication Date Title
KR102615663B1 (ko) 자외선 및 가시광선 파장의 플라즈몬 포토캐소드 이미터
KR102466578B1 (ko) 다수의 전자 빔들을 생성하는 광음극 방출기 시스템
US10804069B2 (en) Photocathode designs and methods of generating an electron beam using a photocathode
US10395884B2 (en) Ruthenium encapsulated photocathode electron emitter
TWI798270B (zh) 產生及測量電子束之系統及方法
KR102545439B1 (ko) 금속 봉지화된 포토캐소드 전자 방출기
KR102662487B1 (ko) 플라즈몬 포토캐소드 이미터

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20210914

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20230208

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20230517

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20230913

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20231214

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20231214

End annual number: 3

Start annual number: 1

PG1601 Publication of registration