TWI828481B - Semiconductor process equipment and wafer transmission system thereof - Google Patents
Semiconductor process equipment and wafer transmission system thereof Download PDFInfo
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- TWI828481B TWI828481B TW111148904A TW111148904A TWI828481B TW I828481 B TWI828481 B TW I828481B TW 111148904 A TW111148904 A TW 111148904A TW 111148904 A TW111148904 A TW 111148904A TW I828481 B TWI828481 B TW I828481B
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title description 30
- 238000012546 transfer Methods 0.000 claims abstract description 222
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 238000001816 cooling Methods 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 6
- 238000003032 molecular docking Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 242
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明涉及半導體製程設備領域,具體地,涉及一種晶圓傳輸系統和一種包括該晶圓傳輸系統的半導體製程設備。 The present invention relates to the field of semiconductor processing equipment, and in particular, to a wafer transfer system and a semiconductor processing equipment including the wafer transfer system.
碳化矽(SiC)是一種有著獨特物理和化學性質的半導體材料,組成碳化矽晶體的矽碳鍵鍵能非常大(4.6eV),其禁帶度寬為2.3~3.3eV,且擁有高硬度、高化學惰性、寬禁帶以及良好的熱穩定性,使碳化矽功率器件能夠在300℃的高溫下進行工作,甚至保證碳化矽功率器件的性能在更高的溫度環境下也不會降低,在相同電壓條件下,碳化矽功率器件的通態電阻比矽基功率器件小一個數量級以上,這也使得碳化矽功率器件的電能轉化率較矽基功率器件的要高。然而也正是由於其性能的特殊性,碳化矽器件製造難度大、成品率低、器件價格偏高,限制了其全面推廣的步伐。 Silicon carbide (SiC) is a semiconductor material with unique physical and chemical properties. The silicon-carbon bond energy making up the silicon carbide crystal is very large (4.6eV), its bandgap is 2.3~3.3eV, and it has high hardness and High chemical inertness, wide bandgap and good thermal stability enable silicon carbide power devices to operate at high temperatures of 300°C, and even ensure that the performance of silicon carbide power devices will not be degraded in higher temperature environments. Under the same voltage conditions, the on-state resistance of silicon carbide power devices is more than an order of magnitude smaller than that of silicon-based power devices, which also makes the power conversion rate of silicon carbide power devices higher than that of silicon-based power devices. However, precisely because of the particularity of its performance, silicon carbide devices are difficult to manufacture, have low yields, and have high device prices, which limits the pace of their comprehensive promotion.
外延生長是碳化矽功率半導體器件製造製程中的首道工序,不同於矽外延工序採用1000℃~1200℃的外延溫度,碳化矽外延採用的溫度通常為1500℃~1800℃,且碳化矽外延的生長時間一般較長。在此條件下,若採用以往在矽外延製程條件下直接取片的方式,容易增加 碳化矽晶圓的表面缺陷,因此需要將裝載碳化矽晶圓的托盤整體放入或取出製程腔室。即,需要先將製程前晶圓放置在托盤上,再將托盤與晶圓整體傳入反應腔中進行製程,在製程完成後,需將托盤與晶圓整體傳出反應腔,再從托盤上取下晶圓。 Epitaxial growth is the first process in the manufacturing process of silicon carbide power semiconductor devices. Unlike the silicon epitaxy process, which uses an epitaxial temperature of 1000℃~1200℃, the temperature used in silicon carbide epitaxy is usually 1500℃~1800℃, and the temperature of silicon carbide epitaxy is The growth time is generally longer. Under this condition, if the previous method of directly removing the wafer under silicon epitaxy process conditions is used, it is easy to increase the The surface defects of the silicon carbide wafer require the entire tray containing the silicon carbide wafer to be placed into or taken out of the process chamber. That is, the pre-process wafer needs to be placed on the tray first, and then the tray and wafer are transferred into the reaction chamber as a whole for the process. After the process is completed, the tray and wafer need to be transferred out of the reaction chamber as a whole, and then removed from the tray. Remove the wafer.
然而,在現有技術中,將晶圓放置在托盤上以及由托盤上取下的製程步驟均需要人為參與,極大地拉低了半導體製程的效率;並且,人為取放片極易使細小顆粒掉落至晶圓表面,造成晶圓污染或者劃傷晶圓的表面,影響碳化矽晶圓的成品率。 However, in the existing technology, the process steps of placing the wafer on the tray and taking it off from the tray require human intervention, which greatly reduces the efficiency of the semiconductor process; moreover, manual handling of the wafer can easily cause fine particles to fall out. Falling onto the surface of the wafer, causing contamination of the wafer or scratching the surface of the wafer, affecting the yield of silicon carbide wafers.
因此,如何提供一種應用於碳化矽晶圓且能夠實現自動化傳片、取片的傳輸系統,成為本領域亟待解決的技術問題。 Therefore, how to provide a transmission system for silicon carbide wafers that can realize automatic wafer transfer and removal has become an urgent technical problem in this field that needs to be solved.
本發明旨在提供一種晶圓傳輸系統以及包括該晶圓傳輸系統的半導體製程設備,該晶圓傳輸系統能夠實現碳化矽晶圓的自動化傳片、取片。 The present invention aims to provide a wafer transfer system and semiconductor processing equipment including the wafer transfer system. The wafer transfer system can realize automatic transfer and removal of silicon carbide wafers.
為實現上述目的,作為本發明的一個方面,提供一種晶圓傳輸系統,該晶圓傳輸系統包括傳輸腔、第一傳輸組件、載入腔、第二傳輸組件和校準腔,其中,該傳輸腔具有用於與反應腔連通的腔室對接口;該載入腔的一側與該傳輸腔連通,另一側具有選擇性開啟的傳輸口;該第二傳輸組件用於通過該傳輸口將晶圓傳輸至該載入腔中的托盤上,以及由該載入腔中的托盤上取下晶圓並將該晶圓通過該傳輸口傳出該載入腔;該校準腔與該傳輸腔連通,且該校準腔中設置有校準組件,該校準組件用於對傳入該校準腔中的托盤的位置進行校準;該第一傳輸組件設置在該傳輸腔中,用於將該托盤傳入該校準腔中,且配合該校準組件對該托盤的位置 進行校準,並將校準後的該托盤由該校準腔中取出並傳入該載入腔中,還用於將該載入腔中承載有晶圓的該托盤由該載入腔中取出並通過該腔室對接口傳入該反應腔中,以及將該反應腔中的該托盤取出。 In order to achieve the above object, as an aspect of the present invention, a wafer transfer system is provided. The wafer transfer system includes a transfer cavity, a first transfer component, a loading cavity, a second transfer component and a calibration cavity, wherein the transfer cavity It has a chamber docking port for communicating with the reaction chamber; one side of the loading chamber is connected to the transfer chamber, and the other side has a selectively opened transfer port; the second transfer component is used to transfer the crystal through the transfer port. The wafer is transferred to the tray in the loading chamber, and the wafer is removed from the tray in the loading chamber and transferred out of the loading chamber through the transfer port; the calibration chamber is connected to the transfer chamber , and the calibration cavity is provided with a calibration component, which is used to calibrate the position of the tray introduced into the calibration cavity; the first transmission component is provided in the transmission cavity, used to transfer the tray into the in the calibration chamber, and match the position of the calibration component to the tray Perform calibration, take out the calibrated tray from the calibration chamber and transfer it into the loading chamber, and also take the tray carrying the wafer in the loading chamber out of the loading chamber and pass it through The chamber interface is introduced into the reaction chamber, and the tray in the reaction chamber is taken out.
可選地,該載入腔包括腔體、基座、頂針驅動組件和多個頂針,該基座設置在該腔體中,該基座具有用於承載該托盤的承載面,該頂針驅動組件用於驅動多個該頂針由該承載面的下方向上從該基座穿出並一一對應地穿過該托盤上的多個頂針孔,或者驅動多個該頂針下降至該承載面下方。 Optionally, the loading cavity includes a cavity, a base, an ejector pin driving assembly and a plurality of ejector pins. The base is disposed in the cavity, the base has a bearing surface for carrying the tray, and the ejector pin driving assembly It is used to drive a plurality of the ejector pins to pass upward from the base from the bottom of the bearing surface and pass through the plurality of ejector pin holes on the tray one by one, or to drive a plurality of the ejector pins to descend below the bearing surface.
可選地,該頂針驅動組件包括安裝板、升降杆和升降驅動組件,多個該頂針設置在該安裝板上,該基座的承載面上形成有安裝槽,該安裝槽的底部形成有貫穿至該基座底部的第一通孔,該安裝板設置在該安裝槽中,該升降杆的頂端穿過該第一通孔與該安裝板固定連接,該升降驅動組件用於驅動該升降杆升降,以帶動該安裝板及其上設置的多個該頂針升降。 Optionally, the ejector pin driving assembly includes a mounting plate, a lifting rod and a lifting driving assembly. A plurality of the ejector pins are arranged on the mounting plate. A mounting groove is formed on the bearing surface of the base, and a through-hole is formed at the bottom of the mounting groove. to the first through hole at the bottom of the base, the mounting plate is arranged in the mounting groove, the top end of the lifting rod passes through the first through hole and is fixedly connected to the mounting plate, and the lifting drive assembly is used to drive the lifting rod Lifting to drive the mounting plate and the plurality of ejector pins provided thereon to rise and fall.
可選地,多個該頂針分為多組,每組中的多個該頂針與該基座的軸線之間的徑向距離相等。 Optionally, the plurality of ejector pins are divided into multiple groups, and the radial distance between the plurality of ejector pins in each group and the axis of the base is equal.
可選地,該升降驅動組件設置在該腔體的下方,該腔體的底壁上形成有第二通孔,該第二通孔與該第一通孔同軸設置;該升降杆的底端通過該第二通孔穿出至該腔體的外部;該升降驅動組件包括升降驅動部和彈性驅動部;該升降驅動部的驅動軸用於在上升時與該升降杆的底端接觸,並推動該升降杆上升;該彈性驅動部用於向該升降杆施加向下的彈力,以在該驅動軸下降時,驅動該升降杆下降。 Optionally, the lifting drive assembly is provided below the cavity, and a second through hole is formed on the bottom wall of the cavity, and the second through hole is coaxially arranged with the first through hole; the bottom end of the lifting rod Pass through the second through hole to the outside of the cavity; the lift drive assembly includes a lift drive part and an elastic drive part; the drive shaft of the lift drive part is used to contact the bottom end of the lift rod when rising, and Push the lifting rod to rise; the elastic driving part is used to apply downward elastic force to the lifting rod, so as to drive the lifting rod to descend when the driving shaft descends.
可選地,該升降杆的底端具有弧形凸面;該升降驅動部的 驅動軸的頂端具有水平接觸面,在該升降驅動部的驅動軸推動該升降杆上升時,該水平接觸面與該弧形凸面接觸。 Optionally, the bottom end of the lifting rod has an arc-shaped convex surface; the lifting driving part The top end of the driving shaft has a horizontal contact surface, and when the driving shaft of the lifting driving part pushes the lifting rod to rise, the horizontal contact surface contacts the arc-shaped convex surface.
可選地,該彈性驅動部包括彈簧、擋環和導向座,該導向座與該腔體的底部固定連接,該導向座的底面形成有導向槽,該導向槽的底面上形成有貫穿至該導向座的頂面的第三通孔,該第三通孔與該第二通孔連通;該升降杆的底端穿過該第三通孔和該導向槽,該擋環和該彈簧均套設在該升降杆上,其中,該擋環位於該導向槽的底面下方,且與該升降杆固定連接;該彈簧位於該導向槽中且位於該擋環與該導向槽的底面之間,該彈簧用於向該擋環施加該彈力。 Optionally, the elastic driving part includes a spring, a blocking ring and a guide seat. The guide seat is fixedly connected to the bottom of the cavity. A guide groove is formed on the bottom surface of the guide seat. A guide groove is formed on the bottom surface of the guide groove that penetrates to the cavity. The third through hole on the top surface of the guide seat is connected to the second through hole; the bottom end of the lifting rod passes through the third through hole and the guide groove, and the retaining ring and the spring are both covered is provided on the lifting rod, wherein the blocking ring is located below the bottom surface of the guide groove and is fixedly connected to the lifting rod; the spring is located in the guide groove and between the blocking ring and the bottom surface of the guide groove, the The spring is used to apply the elastic force to the retaining ring.
可選地,該校準組件包括托盤校準器和旋轉座,該托盤校準器用於檢測傳入該校準腔中的該托盤的旋轉角度以及該托盤中心的水平位置;該第一傳輸組件用於在將該托盤傳入該校準腔中後,根據該托盤校準器的反饋信號調整該托盤的水平位置,使該托盤中心的水平位置與該旋轉座的旋轉軸的水平位置對正,再將該托盤放置在該旋轉座上;該旋轉座用於驅動該托盤繞該旋轉軸,直至該托盤上的特徵結構朝向第一預設角度。 Optionally, the calibration component includes a tray calibrator and a rotating base. The tray calibrator is used to detect the rotation angle of the tray introduced into the calibration chamber and the horizontal position of the center of the tray; the first transmission component is used to transfer the After the tray is introduced into the calibration chamber, the horizontal position of the tray is adjusted according to the feedback signal of the tray calibrator so that the horizontal position of the center of the tray is aligned with the horizontal position of the rotation axis of the rotating base, and then the tray is placed On the rotating base; the rotating base is used to drive the tray around the rotation axis until the feature structure on the tray faces the first preset angle.
可選地,該托盤校準器位於該旋轉座的上方,且能夠在預設位置豎直向下發射檢測信號,並根據反射信號判斷該托盤上的特徵結構是否旋轉至朝向該第一預設角度。 Optionally, the tray calibrator is located above the rotating base and can emit a detection signal vertically downward at a preset position, and determine whether the feature structure on the tray is rotated toward the first preset angle based on the reflected signal. .
可選地,該晶圓傳輸系統還包括固定平臺,該載入腔和該第二傳輸組件均固定設置在該固定平臺上。 Optionally, the wafer transfer system further includes a fixed platform, and the loading chamber and the second transfer component are both fixedly arranged on the fixed platform.
可選地,該晶圓傳輸系統還包括固定設置在該固定平臺上的晶圓校準器,該晶圓校準器用於對晶圓的旋轉方向進行校準,使該晶圓 上的特徵結構朝向第二預設角度;該固定平臺還包括用於設置片盒的第一片盒固定位和第二片盒固定位,該第二傳輸組件、該載入腔和該傳輸腔的中心位於同一直線上,且該第一片盒固定位和該第二片盒固定位分別位於該第二傳輸組件在垂直於該第二傳輸組件的中心與該載入腔的中心之間連線方向上的兩側;該第二傳輸組件用於在將該晶圓由該第一片盒固定位的片盒中取出後,先將該晶圓傳入該晶圓校準器中,並在該晶圓校準器對該晶圓的旋轉方向進行校準後,通過該傳輸口將該晶圓傳輸至該載入腔中的托盤上;以及,在將該晶圓由該載入腔中取出後,先將該晶圓傳入該晶圓校準器中,並在該晶圓校準器對該晶圓的旋轉方向進行校準後,將該晶圓傳輸至該第二片盒固定位的片盒中。 Optionally, the wafer transfer system also includes a wafer calibrator fixedly arranged on the fixed platform. The wafer calibrator is used to calibrate the rotation direction of the wafer so that the wafer The characteristic structure on the film cassette faces the second preset angle; the fixed platform also includes a first film cassette fixing position and a second film cassette fixing position for setting the film cassette, the second transmission component, the loading chamber and the transmission chamber The centers are located on the same straight line, and the first cassette fixing position and the second cassette fixing position are respectively located between the center of the second transfer component perpendicular to the center of the second transfer component and the center of the loading chamber. both sides in the line direction; the second transfer component is used to first transfer the wafer into the wafer aligner after taking the wafer out of the wafer cassette fixed in the first cassette, and then After the wafer aligner calibrates the rotation direction of the wafer, it transfers the wafer to the tray in the loading chamber through the transfer port; and, after taking out the wafer from the loading chamber , first transfer the wafer into the wafer calibrator, and after the wafer calibrator calibrates the rotation direction of the wafer, transfer the wafer to the cassette in the second cassette fixed position .
可選地,該晶圓傳輸系統還包括固定設置在該固定平臺上的托盤支撐塊,該托盤支撐塊的頂部具有用於承載托盤的托盤支撐面,且該托盤支撐塊在朝向該第二傳輸組件的方向形成有開口;該第二傳輸組件還用於伸入該開口並由該托盤支撐面的下方升高至高於該托盤支撐面的位置,以將該托盤支撐面上承載的該托盤取下,再將該托盤放入該載入腔中。 Optionally, the wafer transfer system further includes a tray support block fixedly arranged on the fixed platform, the top of the tray support block has a tray support surface for carrying the tray, and the tray support block faces the second transfer An opening is formed in the direction of the assembly; the second transmission assembly is also used to extend into the opening and rise from below the pallet support surface to a position higher than the pallet support surface to take out the pallet carried on the pallet support surface. down, and then place the tray into the loading cavity.
可選地,該晶圓傳輸系統還包括冷卻腔,該冷卻腔與該傳輸腔連通,該第一傳輸組件用於在將裝有該晶圓的該托盤從該反應腔中取出後,先將其放入該冷卻腔中,待該托盤及其上承載的該晶圓冷卻至預設溫度後,再將其傳輸至該校準腔中;該傳輸腔的中心與該校準腔的中心之間的連線以及該傳輸腔的中心與該冷卻腔的中心之間的連線,均與該第二傳輸組件的中心和該傳輸腔的中心之間的連線成45°夾角。 Optionally, the wafer transfer system further includes a cooling chamber, the cooling chamber is connected to the transfer chamber, and the first transfer component is used to first transfer the tray containing the wafer from the reaction chamber. It is placed in the cooling cavity, and after the tray and the wafer carried on it are cooled to the preset temperature, it is then transferred to the calibration cavity; the distance between the center of the transfer cavity and the center of the calibration cavity The connection line and the connection line between the center of the transmission cavity and the center of the cooling cavity are both at an angle of 45° to the connection line between the center of the second transmission component and the center of the transmission cavity.
作為本發明的第二個方面,提供一種半導體製程設備,包 括晶圓傳輸系統和反應腔,該晶圓傳輸系統用於向該反應腔中傳入承載有晶圓的托盤以及將承載有晶圓的托盤由該反應腔中取出,且該晶圓傳輸系統為前面所述的晶圓傳輸系統。 As a second aspect of the present invention, a semiconductor manufacturing equipment is provided, including It includes a wafer transfer system and a reaction chamber. The wafer transfer system is used to introduce a tray carrying a wafer into the reaction chamber and take out the tray carrying the wafer from the reaction chamber, and the wafer transfer system It is the wafer transfer system described above.
在本發明提供的晶圓傳輸系統和半導體製程設備中,晶圓傳輸系統包括傳輸腔、校準腔和載入腔,第一傳輸組件能夠配合校準腔對托盤的位置進行校準,並將校準後的托盤放入載入腔中。第二傳輸組件能夠將製程前的晶圓放置在校準後的托盤上,或者由校準後的托盤上取下位置確定的晶圓,從而可以實現將晶圓自動放置在托盤上以及自動將晶圓由托盤上取下,晶圓及托盤的整個傳輸過程無需人為干預,進而提高了半導體製程效率,並降低了晶圓表面附著顆粒造成晶圓污染或損傷的概率,提高了晶圓(例如,碳化矽晶圓)的產品良率。 In the wafer transfer system and semiconductor process equipment provided by the present invention, the wafer transfer system includes a transfer cavity, a calibration cavity and a loading cavity. The first transfer component can cooperate with the calibration cavity to calibrate the position of the tray, and transfer the calibrated The tray is placed into the loading chamber. The second transfer component can place the pre-process wafer on the calibrated pallet, or remove the wafer at a determined position from the calibrated pallet, thereby enabling automatic placement of the wafer on the pallet and automatic transfer of the wafer to the pallet. Removed from the tray, the entire transfer process of the wafer and the tray does not require human intervention, thereby improving the efficiency of the semiconductor process, reducing the probability of wafer contamination or damage caused by particles attached to the surface of the wafer, and improving the efficiency of the wafer (for example, carbonization silicon wafer) product yield.
10:晶圓 10:wafer
20:托盤 20:pallet
30:反應腔室 30:Reaction chamber
40:片盒 40: film box
100:傳輸腔 100:Transmission cavity
200:第一傳輸組件 200: First transmission component
300:校準腔 300: Calibration cavity
310:托盤校準器 310:Pallet Calibrator
400:載入腔 400:Loading cavity
410:門閥 410:gate valve
420:門閥驅動機構 420: Gate valve driving mechanism
430:腔體 430:Cavity
440:基座 440:Pedestal
450:頂針 450: thimble
460:安裝板 460:Mounting plate
461:連接部 461:Connection Department
462:條形部 462: Strip part
463:連接孔 463:Connection hole
464:頂針固定孔 464: Ejector fixing hole
470:升降杆 470:Lifting rod
471:半球部 471:Hemisphere
480:升降驅動組件 480: Lift drive assembly
480a:升降驅動部 480a:Lifting drive part
480b:彈性驅動部 480b: Elastic drive part
481:彈簧 481:Spring
482:擋環 482:Blocking ring
483:導向座 483:Guide seat
500:第二傳輸組件 500: Second transmission component
600:晶圓校準器 600: Wafer aligner
700:托盤支撐塊 700:Pallet support block
710:開口 710:Open your mouth
800:冷卻腔 800: Cooling chamber
當結合附圖閱讀時,從以下詳細描述最佳理解本揭露之態樣。應注意,根據產業中之標準實踐,各種構件未按比例繪製。事實上,為了論述的清楚起見可任意增大或減小各種構件之尺寸。 The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion.
圖1是本發明實施例提供的晶圓傳輸系統的結構示意圖;圖2是本發明實施例提供的晶圓傳輸系統中載入腔的結構示意圖;圖3是本發明實施例提供的晶圓傳輸系統中載入腔在另一視角下的結構示意圖;圖4是圖3中載入腔的A區域局部示意圖;圖5是本發明實施例提供的晶圓傳輸系統中載入腔中的安裝板的結構示意圖;圖6是本發明實施例中托盤的結構示意圖; 圖7是圖6中托盤的A區域局部示意圖;圖8是本發明實施例中托盤與晶圓之前的位置關係示意圖;圖9是本發明實施例提供的晶圓傳輸系統中托盤支撐塊的結構示意圖;圖10是本發明實施例提供的晶圓傳輸系統中第二傳輸組件由托盤支撐塊上取下托盤的原理示意圖;圖11是本發明實施例提供的晶圓傳輸系統中第一傳輸組件由載入腔中取出托盤的原理示意圖;圖12是本發明實施例提供的晶圓傳輸系統中第二傳輸組件向載入腔中的托盤上傳輸晶圓的原理示意圖。 FIG. 1 is a schematic structural diagram of a wafer transfer system provided by an embodiment of the present invention; FIG. 2 is a schematic structural diagram of a loading cavity in the wafer transfer system provided by an embodiment of the present invention; FIG. 3 is a schematic structural diagram of a wafer transfer system provided by an embodiment of the present invention. A schematic structural diagram of the loading cavity in the system from another perspective; Figure 4 is a partial schematic diagram of area A of the loading cavity in Figure 3; Figure 5 is a mounting plate in the loading cavity in the wafer transfer system provided by an embodiment of the present invention The structural schematic diagram; Figure 6 is the structural schematic diagram of the tray in the embodiment of the present invention; Figure 7 is a partial schematic diagram of area A of the tray in Figure 6; Figure 8 is a schematic diagram of the positional relationship between the tray and the wafer in the embodiment of the present invention; Figure 9 is the structure of the tray support block in the wafer transfer system provided by the embodiment of the present invention. Schematic diagram; Figure 10 is a principle schematic diagram of the second transmission component in the wafer transmission system provided by the embodiment of the present invention, and the tray is removed from the tray support block; Figure 11 is the first transmission component in the wafer transmission system provided by the embodiment of the present invention A schematic diagram of the principle of taking out the tray from the loading cavity; FIG. 12 is a schematic diagram of the principle of transferring the wafer to the tray in the loading cavity by the second transfer component in the wafer transfer system provided by the embodiment of the present invention.
以下揭露提供用於實施本揭露之不同構件之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。當然,此等僅為實例且非意欲限制。舉例而言,在以下描述中之一第一構件形成於一第二構件上方或上可包含其中該第一構件及該第二構件經形成為直接接觸之實施例,且亦可包含其中額外構件可形成在該第一構件與該第二構件之間,使得該第一構件及該第二構件可不直接接觸之實施例。另外,本揭露可在各個實例中重複參考數字及/或字母。此重複出於簡化及清楚之目的且本身不指示所論述之各個實施例及/或組態之間的關係。 The following disclosure provides many different embodiments or examples of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the following description in which a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members Embodiments may be formed between the first member and the second member such that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numbers and/or letters in various instances. This repetition is for simplicity and clarity and does not inherently indicate a relationship between the various embodiments and/or configurations discussed.
此外,為便於描述,諸如「下面」、「下方」、「下」、「上方」、「上」及類似者之空間相對術語可在本文中用於描述一個元件或構件與另一(些)元件或構件之關係,如圖中圖解說明。空間相對術語意欲涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。設備 可以其他方式定向(旋轉90度或按其他定向)且因此可同樣解釋本文中使用之空間相對描述詞。 In addition, for ease of description, spatially relative terms such as “below,” “below,” “lower,” “above,” “upper,” and the like may be used herein to describe one element or component in relation to another(s). The relationship between components or components, as illustrated in the figure. Spatially relative terms are intended to cover different orientations of the device in use or operation other than the orientation depicted in the figures. equipment May be otherwise oriented (rotated 90 degrees or at other orientations) and therefore the spatially relative descriptors used herein interpreted equally.
儘管陳述本揭露之寬泛範疇之數值範圍及參數係近似值,然儘可能精確地報告特定實例中陳述之數值。然而,任何數值固有地含有必然由於見於各自測試量測中之標準偏差所致之某些誤差。再者,如本文中使用,術語「大約」通常意謂在一給定值或範圍之10%、5%、1%或0.5%內。替代地,術語「大約」意謂在由此項技術之一般技術者考量時處於平均值之一可接受標準誤差內。除在操作/工作實例中以外,或除非以其他方式明確指定,否則諸如針對本文中揭露之材料之數量、時間之持續時間、溫度、操作條件、數量之比率及其類似者之全部數值範圍、數量、值及百分比應被理解為在全部例項中由術語「大約」修飾。相應地,除非相反地指示,否則本揭露及隨附發明申請專利範圍中陳述之數值參數係可根據需要變化之近似值。至少,應至少鑑於所報告有效數位之數目且藉由應用普通捨入技術解釋各數值參數。範圍可在本文中表達為從一個端點至另一端點或在兩個端點之間。本文中揭露之全部範圍包含端點,除非另有指定。 Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the values stated in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, the term "approximately" means within one acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless otherwise expressly specified, all numerical ranges such as quantities, durations of time, temperatures, operating conditions, ratios of quantities, and the like for materials disclosed herein, Quantities, values and percentages should be understood to be modified in all instances by the term "approximately". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the patent claims of this disclosure and accompanying invention claims are approximations that may vary as necessary. At a minimum, each numerical parameter should be interpreted in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one endpoint to the other endpoint or between two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.
為解決上述技術問題,作為本發明的一個方面,提供一種晶圓傳輸系統,如圖1所示,該晶圓傳輸系統包括傳輸腔100、第一傳輸組件200、校準腔300、載入腔400和第二傳輸組件500,其中,傳輸腔100具有用於與反應腔30連通的腔室對接口;載入腔400的一側與傳輸腔100連通,另一側具有選擇性開啟的傳輸口,即該傳輸口可以開啟或關閉;第二傳輸組件500用於通過傳輸口將晶圓10傳輸至載入腔400中的托盤20上,以及由載入腔400中的托盤20上取下晶圓10並將晶圓10通過傳輸口傳 出載入腔400;校準腔300與傳輸腔100連通,且校準腔300中設置有校準組件,校準組件用於對傳入校準腔300中的托盤20的位置(具體包括托盤20的水平位置及托盤20的旋轉角度)進行校準;第一傳輸組件200設置在傳輸腔100中,用於將托盤20傳入校準腔300中,且配合校準組件對托盤20的位置進行校準,並將校準後的托盤20由校準腔300中取出並傳入載入腔400中,還用於將載入腔400中承載有晶圓10的托盤20由載入腔400中取出並通過腔室對接口傳入反應腔30中,以及將反應腔30中的托盤20取出。 In order to solve the above technical problems, as an aspect of the present invention, a wafer transfer system is provided. As shown in Figure 1, the wafer transfer system includes a transfer cavity 100, a first transfer component 200, a calibration cavity 300, and a loading cavity 400. and the second transfer assembly 500, wherein the transfer chamber 100 has a chamber interface for communicating with the reaction chamber 30; one side of the loading chamber 400 is connected to the transfer chamber 100, and the other side has a selectively opened transfer port, That is, the transfer port can be opened or closed; the second transfer component 500 is used to transfer the wafer 10 to the tray 20 in the loading chamber 400 through the transfer port, and to remove the wafer from the tray 20 in the loading chamber 400 10 and pass the wafer 10 through the transfer port The calibration cavity 300 is connected to the transmission cavity 100, and a calibration component is provided in the calibration cavity 300. The calibration component is used to determine the position of the tray 20 (specifically including the horizontal position and the horizontal position of the tray 20) introduced into the calibration cavity 300. The rotation angle of the tray 20) is calibrated; the first transmission component 200 is disposed in the transmission cavity 100, used to transfer the tray 20 into the calibration cavity 300, and cooperates with the calibration component to calibrate the position of the tray 20, and transfer the calibrated The tray 20 is taken out from the calibration chamber 300 and introduced into the loading chamber 400. It is also used to take out the tray 20 carrying the wafer 10 in the loading chamber 400 from the loading chamber 400 and introduce the reaction through the chamber interface. into the reaction chamber 30, and take out the tray 20 from the reaction chamber 30.
示例性地,第一傳輸組件200為真空機械手,第二傳輸組件500為大氣機械手。 For example, the first transmission component 200 is a vacuum manipulator, and the second transmission component 500 is an atmospheric manipulator.
在本發明實施例中,晶圓傳輸系統包括傳輸腔100、校準腔300和載入腔400,第一傳輸組件200能夠配合校準組件對托盤20的位置進行校準,並將校準後的托盤20放入載入腔400中。第二傳輸組件500能夠將製程前的晶圓10放置在校準後的托盤20上,或者由校準後的托盤20上取下位置確定的晶圓10,從而可以實現將晶圓10自動放置在托盤20上以及自動將晶圓10由托盤20上取下,晶圓10及托盤20的整個傳輸過程無需人為干預,進而提高了半導體製程效率,並降低了晶圓表面附著顆粒造成晶圓污染或損傷的概率,提高了晶圓(例如,碳化矽晶圓)的產品良率。 In the embodiment of the present invention, the wafer transfer system includes a transfer cavity 100, a calibration cavity 300 and a loading cavity 400. The first transfer component 200 can cooperate with the calibration component to calibrate the position of the tray 20 and place the calibrated tray 20 on it. into the loading cavity 400. The second transfer component 500 can place the pre-process wafer 10 on the calibrated pallet 20, or remove the wafer 10 at a determined position from the calibrated pallet 20, so that the wafer 10 can be automatically placed on the pallet. 20 and automatically remove the wafer 10 from the tray 20. The entire transfer process of the wafer 10 and the tray 20 does not require human intervention, thereby improving the efficiency of the semiconductor process and reducing the contamination or damage of the wafer caused by particles adhering to the surface of the wafer. probability, improving the product yield of wafers (for example, silicon carbide wafers).
需要說明的是,傳輸腔100具有控制內部氣體壓力的功能。具體地,如圖1至圖3所示,載入腔400的傳輸口處設置有門閥410和門閥驅動機構420,門閥驅動機構420用於驅動門閥410選擇性地封閉傳輸口,即開啟或封閉傳輸口,在第二傳輸組件500對載入腔400進行取放片 操作(即向載入腔400中傳入晶圓10或由載入腔400中取出晶圓10)前,傳輸腔100內部氣壓由真空(或接近真空)變化至與外界大氣壓相同,而後門閥驅動機構420驅動門閥410將傳輸口開啟;在第二傳輸組件500對載入腔400進行取放片操作後,門閥驅動機構420驅動門閥410將傳輸口封閉,傳輸腔100抽真空,以便後續通過腔室對接口與反應腔30連通,使第一傳輸組件200在真空環境下對反應腔30進行取放片操作,從而防止大氣中的顆粒及污染物進入反應腔30中,提高晶圓加工環境的潔淨度。 It should be noted that the transmission chamber 100 has the function of controlling internal gas pressure. Specifically, as shown in FIGS. 1 to 3 , a gate valve 410 and a gate valve driving mechanism 420 are provided at the transfer port of the loading chamber 400 . The gate valve driving mechanism 420 is used to drive the gate valve 410 to selectively close the transfer port, that is, to open or close the transfer port. The transfer port is used to pick and place films from the loading chamber 400 in the second transfer assembly 500. Before operation (i.e., transferring the wafer 10 into the loading chamber 400 or taking out the wafer 10 from the loading chamber 400), the internal air pressure of the transfer chamber 100 changes from vacuum (or close to vacuum) to the same as the external atmospheric pressure, and the back door valve is driven. The mechanism 420 drives the door valve 410 to open the transfer port; after the second transfer assembly 500 performs a pick-and-place operation on the loading chamber 400, the door valve driving mechanism 420 drives the door valve 410 to close the transfer port, and the transfer chamber 100 is evacuated to facilitate subsequent passage through the chamber. The chamber interface is connected to the reaction chamber 30, allowing the first transfer component 200 to perform a pick-and-place operation on the reaction chamber 30 in a vacuum environment, thereby preventing particles and pollutants in the atmosphere from entering the reaction chamber 30, and improving the safety of the wafer processing environment. Cleanliness.
作為本發明的一種可選實施方式,晶圓10和托盤20均具有用於區分朝向的特徵結構,通過識別晶圓10上特徵結構的朝向即可確定晶圓上形成的圖案或元器件(如,晶片)的位置,同樣地,通過識別托盤20上特徵結構的朝向即可確定托盤20的旋轉方向,進而實現對其上承載的晶圓10的精確定位。 As an optional embodiment of the present invention, both the wafer 10 and the tray 20 have characteristic structures for distinguishing orientations. By identifying the orientation of the characteristic structures on the wafer 10, the patterns or components (such as components) formed on the wafer can be determined. , wafer), similarly, the rotation direction of the tray 20 can be determined by identifying the orientation of the feature structures on the tray 20, thereby achieving precise positioning of the wafer 10 carried thereon.
具體地,如圖6、圖7所示,托盤20上的特徵結構可以為形成在托盤20邊緣上的缺口21;如圖8所示,晶圓10上的特徵結構可以為形成在晶圓10一側邊緣的平邊f;如圖6、圖8所示,托盤20的承載面上形成有用於容納晶圓10的容納槽22,容納槽22的邊緣輪廓與晶圓10的邊緣輪廓對應,即,容納槽22也具有相應的平邊g,晶圓10放置在托盤20上後嵌入至容納槽22中,從而提高托盤20在反應腔30中帶動晶圓10旋轉時晶圓10與托盤20之間相對位置的穩定性。 Specifically, as shown in FIGS. 6 and 7 , the characteristic structure on the tray 20 may be a notch 21 formed on the edge of the tray 20 ; as shown in FIG. 8 , the characteristic structure on the wafer 10 may be a gap 21 formed on the edge of the wafer 10 The flat edge f on one side edge; as shown in Figures 6 and 8, an accommodating groove 22 for accommodating the wafer 10 is formed on the bearing surface of the tray 20, and the edge profile of the accommodating groove 22 corresponds to the edge profile of the wafer 10. That is, the accommodating groove 22 also has a corresponding flat edge g. The wafer 10 is placed on the tray 20 and then embedded into the accommodating groove 22 , thereby improving the distance between the wafer 10 and the tray 20 when the tray 20 drives the wafer 10 to rotate in the reaction chamber 30 relative position stability.
可選地,如圖6、圖7所示,托盤20的特徵結構(例如,缺口21)的朝向與其容納槽22的平邊g朝向相同。可選地,托盤20的材質可以為石墨。 Optionally, as shown in FIGS. 6 and 7 , the orientation of the feature structure (for example, the notch 21 ) of the tray 20 is the same as the orientation of the flat side g of its receiving groove 22 . Optionally, the material of the tray 20 may be graphite.
作為本發明的一種可選實施方式,校準組件包括托盤校準 器310和旋轉座(圖1中旋轉座被托盤20遮擋而未示出),托盤校準器310用於檢測傳入校準腔300中的托盤20的旋轉角度以及托盤20中心的水平位置;第一傳輸組件200用於在將托盤20傳入校準腔300中後,根據托盤校準器310的反饋信號調整托盤20的水平位置,使托盤20中心的水平位置與旋轉座的旋轉軸的水平位置對正,再將托盤20放置在旋轉座上;旋轉座用於驅動托盤20繞旋轉軸旋轉,直至托盤20上的特徵結構(例如,缺口21)朝向第一預設角度。 As an optional embodiment of the present invention, the calibration component includes a tray calibration The tray calibrator 310 and the rotating base (the rotating base is blocked by the tray 20 in Figure 1 and is not shown), the tray calibrator 310 is used to detect the rotation angle of the tray 20 introduced into the calibration chamber 300 and the horizontal position of the center of the tray 20; first The transmission assembly 200 is used to adjust the horizontal position of the tray 20 according to the feedback signal of the tray calibrator 310 after the tray 20 is transferred into the calibration chamber 300, so that the horizontal position of the center of the tray 20 is aligned with the horizontal position of the rotation axis of the rotating base. , and then place the tray 20 on the rotating base; the rotating base is used to drive the tray 20 to rotate around the rotation axis until the characteristic structure (for example, the notch 21) on the tray 20 faces the first preset angle.
在本發明實施例中,第一傳輸組件200能夠根據托盤校準器310的反饋信號調整托盤20的水平位置,使托盤20的軸線與旋轉座的旋轉軸的軸線對正,即,使托盤20的軸線在水平面上的投影的中心與旋轉座的旋轉軸的軸線在水平面上的投影的中心重合。具體地,托盤校準器310能夠將托盤20的軸線相對於旋轉座的旋轉軸的軸線沿X軸、Y軸方向的偏移量反饋至第一傳輸組件200,X軸、Y軸為托盤校準器310建立的X-Y水平直角坐標系的兩條軸,第一傳輸組件200根據托盤校準器310的上述反饋資訊移動托盤20的水平位置,對托盤20進行反向位置補償(即,使托盤20沿X軸、Y軸進行與偏移量大小相等,且方向相反的位移),從而使托盤20的軸線與旋轉座的旋轉軸的軸線對正。 In the embodiment of the present invention, the first transmission assembly 200 can adjust the horizontal position of the tray 20 according to the feedback signal of the tray calibrator 310, so that the axis of the tray 20 is aligned with the axis of the rotation axis of the rotating base, that is, the axis of the tray 20 is aligned with the axis of the rotation axis of the rotating base. The center of the projection of the axis on the horizontal plane coincides with the center of the projection of the axis of the rotation axis of the rotating base on the horizontal plane. Specifically, the pallet calibrator 310 can feed back to the first transmission assembly 200 the offset of the axis of the pallet 20 relative to the axis of the rotation axis of the rotary base along the X-axis and Y-axis. The X-axis and Y-axis are the pallet calibrator. 310 establishes the two axes of the X-Y horizontal rectangular coordinate system, the first transmission component 200 moves the horizontal position of the pallet 20 according to the above-mentioned feedback information from the pallet calibrator 310, and performs reverse position compensation on the pallet 20 (that is, moving the pallet 20 along the The Y-axis and the Y-axis perform a displacement equal to the offset amount and in the opposite direction), so that the axis of the tray 20 is aligned with the axis of the rotation axis of the rotating base.
旋轉座能夠驅動托盤20繞旋轉軸旋轉,直至托盤20上的特徵結構(例如,缺口21)朝向第一預設角度,從而實現對托盤20的水平位置及朝向的校準,進而保證第一傳輸組件200將托盤20重新由校準腔300中取出並送入載入腔400中時托盤20的水平位置及朝向的準確性。 The rotating base can drive the tray 20 to rotate around the rotation axis until the characteristic structure (for example, the notch 21) on the tray 20 faces the first preset angle, thereby achieving the calibration of the horizontal position and orientation of the tray 20, thereby ensuring the first transmission component 200 The accuracy of the horizontal position and orientation of the tray 20 when the tray 20 is taken out of the calibration chamber 300 and sent into the loading chamber 400 again.
作為本發明的一種可選實施方式,托盤校準器310基於光學測距原理對托盤20上的特徵結構進行檢測,以判斷托盤20上的特徵結 構是否朝向第一預設角度。具體地,如圖1所示,托盤校準器310位於旋轉座的上方,且能夠在預設位置豎直向下發射檢測信號,並根據反射信號判斷托盤20上的特徵結構是否朝向第一預設角度,旋轉座在托盤校準器310根據反射信號判定該特徵結構已朝向第一預設角度後停止轉動,從而實現對托盤20旋轉方向的校準。 As an optional implementation of the present invention, the tray calibrator 310 detects the characteristic structures on the tray 20 based on the principle of optical distance measurement to determine the characteristic structures on the tray 20 . Whether the structure is facing the first preset angle. Specifically, as shown in FIG. 1 , the tray calibrator 310 is located above the rotating base, and can emit detection signals vertically downward at a preset position, and determine whether the feature structure on the tray 20 is facing the first preset position based on the reflected signal. angle, the rotating base stops rotating after the tray calibrator 310 determines that the characteristic structure has moved toward the first preset angle based on the reflected signal, thereby achieving calibration of the rotation direction of the tray 20 .
例如,當托盤20上的特徵結構為缺口21時,托盤校準器310能夠在預設位置豎直向下發射檢測信號,在缺口21未朝向第一預設角度時,缺口21未到達托盤校準器310所在的預設位置的正下方,此時檢測信號將在托盤20的上表面反射形成反射信號,當缺口21朝向第一預設角度時,缺口21到達托盤校準器310所在的預設位置的正下方,此時檢測信號穿過缺口21向下傳播至托盤20下方的物體(如,校準腔300的腔體底壁、旋轉座或者其他設置在托盤20下方的物體)後再發生反射,從而使托盤校準器310接收到的反射信號發生改變,進而判定缺口21已朝向第一預設角度。 For example, when the characteristic structure on the pallet 20 is the notch 21, the pallet calibrator 310 can emit the detection signal vertically downward at the preset position. When the notch 21 is not facing the first preset angle, the notch 21 has not reached the pallet calibrator. Just below the preset position where 310 is located, the detection signal will be reflected on the upper surface of the tray 20 to form a reflection signal. When the notch 21 faces the first preset angle, the notch 21 reaches the preset position where the tray calibrator 310 is located. Directly below, at this time, the detection signal propagates downward through the gap 21 to the objects below the tray 20 (such as the bottom wall of the calibration chamber 300, the rotating seat, or other objects arranged below the tray 20) and then reflects. The reflected signal received by the tray calibrator 310 is changed, and then it is determined that the notch 21 is facing the first preset angle.
需要說明的是,第二傳輸組件500在拾取晶圓10時,晶圓10的朝向即為確定的角度,以保證晶圓10的平邊f與托盤20上容納槽22的平邊g對正。具體地,可通過晶圓傳輸系統中的其他校準模組對放入載入腔400前的晶圓10進行校準。例如,作為本發明的一種可選實施方式,如圖1所示,該晶圓傳輸系統還包括晶圓校準器600,晶圓校準器600用於對晶圓10的旋轉方向進行校準,使晶圓10上的特徵結構(例如,平邊f)朝向第二預設角度,第二傳輸組件500用於在將晶圓10由片盒40中取出後,先將晶圓10傳入晶圓校準器600中,並在晶圓校準器600對晶圓10的旋轉方向進行校準後,通過傳輸口將晶圓10傳輸至載入腔400中的托盤20上。 It should be noted that when the second transfer component 500 picks up the wafer 10, the orientation of the wafer 10 is a certain angle to ensure that the flat edge f of the wafer 10 is aligned with the flat edge g of the receiving groove 22 on the tray 20. . Specifically, the wafer 10 before being placed in the loading chamber 400 can be calibrated through other calibration modules in the wafer transfer system. For example, as an optional implementation of the present invention, as shown in Figure 1, the wafer transfer system also includes a wafer calibrator 600. The wafer calibrator 600 is used to calibrate the rotation direction of the wafer 10 so that the wafer 10 can The feature structure (for example, the flat edge f) on the circle 10 faces the second preset angle, and the second transfer component 500 is used to first transfer the wafer 10 into the wafer calibration after taking the wafer 10 out of the cassette 40 In the wafer 600 , and after the wafer aligner 600 calibrates the rotation direction of the wafer 10 , the wafer 10 is transferred to the tray 20 in the loading cavity 400 through the transfer port.
在本發明實施例中,校準腔300中的校準組件能夠對托盤20的旋轉角度進行校準,晶圓校準器600能夠對晶圓10的旋轉角度進行校準,第一預設角度與第二預設角度設置為,特徵結構(例如,缺口21)朝向第一預設角度的托盤20被第一傳輸組件200由校準腔300中取出並傳入載入腔400中後,特徵結構(例如,平邊f)朝向第二預設角度的晶圓10被第二傳輸組件500由晶圓校準器600中取出並傳入載入腔400中,此時晶圓10上的特徵結構(例如,平邊f)與托盤20上的容納槽22的平邊g的位置及角度相互對應。 In the embodiment of the present invention, the calibration component in the calibration chamber 300 can calibrate the rotation angle of the tray 20, and the wafer calibrator 600 can calibrate the rotation angle of the wafer 10. The first preset angle and the second preset angle The angle is set such that after the tray 20 with the feature structure (eg, notch 21 ) facing the first preset angle is taken out of the calibration chamber 300 by the first transfer assembly 200 and transferred into the loading chamber 400 , the feature structure (eg, flat edge) f) The wafer 10 facing the second preset angle is taken out of the wafer aligner 600 by the second transfer assembly 500 and transferred into the loading chamber 400. At this time, the characteristic structures on the wafer 10 (for example, flat edges f ) corresponds to the position and angle of the flat side g of the receiving groove 22 on the tray 20 .
為提高在載入腔400中將晶圓10放置在托盤20上或由托盤20上取下的平穩性,作為本發明的一種優選實施方式,如圖3、圖4所示,載入腔400包括腔體430、基座440、頂針驅動組件和多個頂針450(PIN),基座440設置在腔體430中,基座440具有用於承載托盤20的承載面,頂針驅動組件用於驅動多個頂針450由承載面的下方向上從基座440穿出並一一對應地穿過托盤20上的多個頂針孔,或者驅動多個頂針450下降至承載面下方。 In order to improve the stability of placing the wafer 10 on or removing the wafer 10 from the tray 20 in the loading cavity 400, as a preferred embodiment of the present invention, as shown in Figures 3 and 4, the loading cavity 400 It includes a cavity 430, a base 440, an ejector pin driving assembly and a plurality of ejector pins 450 (PINs). The base 440 is disposed in the cavity 430. The base 440 has a bearing surface for carrying the tray 20. The ejector pin driving assembly is used for driving. The plurality of ejector pins 450 pass upward from the base 440 from the bottom of the bearing surface and pass through the plurality of ejector pin holes on the tray 20 one by one, or the plurality of ejector pins 450 are driven to descend below the bearing surface.
在本發明實施例中,載入腔400包括腔體430、基座440、頂針驅動組件和多個頂針450,頂針驅動組件能夠驅動多個頂針450向上穿出基座440的承載面並穿過托盤20上的多個頂針孔,或者驅動多個頂針450向下縮回承載面下方,從而可以在第二傳輸組件500向托盤20上放置晶圓10時,先通過頂針驅動組件驅動多個頂針450升起,將晶圓10放置在多個頂針450上,再通過頂針驅動組件驅動多個頂針450下降,使晶圓10平穩地落在托盤20上;同樣地,在第二傳輸組件500由托盤20上取下晶圓10時,先通過頂針驅動組件驅動多個頂針450升起,將晶圓10頂起至脫離 托盤20,從而可通過第二傳輸組件500由多個頂針450上取下晶圓10,進而提高了在載入腔400中將晶圓10放置在托盤20上或由托盤20上取下的平穩性,保證了晶圓10與托盤20之間位置的穩定性。 In the embodiment of the present invention, the loading cavity 400 includes a cavity 430, a base 440, an ejection pin driving assembly and a plurality of ejection pins 450. The ejection pin driving assembly can drive the plurality of ejection pins 450 upward and out of the bearing surface of the base 440 and through Multiple ejector pin holes on the tray 20, or multiple ejector pins 450 can be driven downward and retracted below the carrying surface, so that when the second transfer assembly 500 places the wafer 10 on the tray 20, the ejector pin driving assembly can first drive multiple ejector pins 450. The ejector pins 450 rise, place the wafer 10 on the plurality of ejector pins 450, and then drive the plurality of ejector pins 450 down through the ejector pin driving assembly, so that the wafer 10 falls smoothly on the tray 20; similarly, in the second transport assembly 500 When removing the wafer 10 from the tray 20 , first drive the plurality of ejector pins 450 to rise through the ejector pin driving assembly to lift the wafer 10 until it is detached. The tray 20 can be used to remove the wafer 10 from the plurality of ejector pins 450 through the second transfer assembly 500 , thereby improving the stability of placing the wafer 10 on the tray 20 or removing the wafer 10 from the tray 20 in the loading chamber 400 . This ensures the stability of the position between the wafer 10 and the tray 20 .
為保證多個頂針450頂端高度的一致性,以提高晶圓10的水平度,作為本發明的一種優選實施方式,如圖4所示,頂針驅動組件包括安裝板460、升降杆470和升降驅動組件480,多個頂針450設置在安裝板460上,基座440的承載面上形成有安裝槽,安裝槽的底部形成有貫穿至基座440底部的第一通孔a,安裝板460設置在安裝槽中,升降杆470的頂端穿過第一通孔a與安裝板460固定連接,升降驅動組件480用於驅動升降杆470在第一通孔a中運動,以帶動安裝板460及其上設置的多個頂針450升降。 In order to ensure the consistency of the top heights of multiple ejector pins 450 and improve the levelness of the wafer 10, as a preferred embodiment of the present invention, as shown in Figure 4, the ejector pin drive assembly includes a mounting plate 460, a lift rod 470 and a lift drive. In the assembly 480, a plurality of ejector pins 450 are arranged on the mounting plate 460. A mounting slot is formed on the bearing surface of the base 440. A first through hole a is formed at the bottom of the mounting slot that penetrates to the bottom of the base 440. The mounting plate 460 is arranged on In the installation slot, the top of the lifting rod 470 passes through the first through hole a and is fixedly connected to the mounting plate 460. The lifting drive assembly 480 is used to drive the lifting rod 470 to move in the first through hole a to drive the mounting plate 460 and the mounting plate 460. Set of multiple ejector pins 450 lifts.
在本發明實施例中,多個頂針450設置在安裝板460上,升降驅動組件480通過升降杆470驅動安裝板460帶動多個頂針450升降,從而實現多個頂針450的同步運動,保證了多個頂針450沿豎直方向進給量的一致性,進而保證了晶圓10與托盤20之間的平行度。 In the embodiment of the present invention, multiple ejector pins 450 are arranged on the mounting plate 460, and the lifting drive assembly 480 drives the mounting plate 460 through the lifting rod 470 to drive the multiple ejector pins 450 to move up and down, thereby realizing the synchronous movement of the multiple ejector pins 450 and ensuring that multiple ejector pins 450 move up and down. The feed amount of each ejector pin 450 in the vertical direction is consistent, thus ensuring the parallelism between the wafer 10 and the tray 20 .
為提高晶圓傳輸系統對不同尺寸的晶圓10以及托盤20的相容性,作為本發明的一種優選實施方式,如圖4、圖5所示,安裝板460上固定設置有多組頂針450,每組中的多個頂針450與基座440的軸線之間的徑向距離相等,從而可實現相容不同尺寸的晶圓10以及托盤20。可選的,不同組中的多個頂針450與基座440的軸線之間的徑向距離可以相等,也可以不等。 In order to improve the compatibility of the wafer transfer system for wafers 10 and trays 20 of different sizes, as a preferred embodiment of the present invention, as shown in FIGS. 4 and 5 , multiple sets of ejector pins 450 are fixedly provided on the mounting plate 460 , the radial distance between the plurality of ejector pins 450 in each group and the axis of the base 440 is equal, thereby achieving compatibility with wafers 10 and trays 20 of different sizes. Optionally, the radial distance between the multiple ejector pins 450 in different groups and the axis of the base 440 may be equal or unequal.
作為本發明的一種可選實施方式,如圖5所示,安裝板460包括連接部461和周向等間隔固定設置在連接部461四周的三個條形部 462,連接部461的中心形成有連接孔463,升降杆470的頂端固定設置在連接孔463中;條形部462沿徑向延伸,且條形部462上形成有多個沿徑向間隔分佈的頂針固定孔464,每組頂針450包括底端一一對應地固定設置在三個條形部462上的三個頂針固定孔464中的三根頂針450。 As an optional embodiment of the present invention, as shown in FIG. 5 , the mounting plate 460 includes a connecting portion 461 and three strip portions fixedly arranged at equal intervals around the connecting portion 461 in the circumferential direction. 462, a connecting hole 463 is formed in the center of the connecting portion 461, and the top end of the lifting rod 470 is fixedly arranged in the connecting hole 463; the strip portion 462 extends in the radial direction, and a plurality of strip portions 462 are formed at intervals in the radial direction. Each set of ejector pins 450 includes three ejector pins 450 whose bottom ends are fixed in three ejector pin fixing holes 464 on the three strip portions 462 one-to-one.
即,對於任一尺寸的晶圓10以及托盤20,均可通過三個條形部462上的位於同一分度圓上的三根頂針450組成對應的三針結構,該三針結構穿過托盤20上的三個頂針孔並通過三針的頂端形成對晶圓10平面的穩定定位,且每根頂針450的頂端受力均相等,不會因受力不均導致晶圓10傾斜,實現晶圓10的穩定起落。 That is, for the wafer 10 and the tray 20 of any size, a corresponding three-pin structure can be formed by three ejection pins 450 on the three bar-shaped portions 462 located on the same index circle, and the three-pin structure passes through the tray 20 The three ejection pin holes on the top of the ejection pin 450 form a stable positioning on the plane of the wafer 10 through the tops of the three pins, and the tops of each ejection pin 450 are equally stressed, so that the wafer 10 will not be tilted due to uneven stress, thereby achieving a stable positioning of the wafer 10. The steady rise and fall of the circle 10.
為保證多個頂針450運動方向的穩定性,作為本發明的一種優選實施方式,如圖4所示,升降驅動組件480設置在腔體430的下方,腔體430的底壁上形成有第二通孔b,第二通孔b與第一通孔a同軸設置;升降杆470的底端通過第二通孔b穿出至腔體430的外部;升降驅動組件480包括升降驅動部480a和彈性驅動部480b;升降驅動部480a的驅動軸用於在上升時與升降杆470的底端接觸,並推動升降杆470上升;彈性驅動部480b用於向升降杆470施加向下的彈力,以在升降驅動部480a的驅動軸下降時,驅動升降杆470下降。 In order to ensure the stability of the movement direction of the plurality of ejector pins 450, as a preferred embodiment of the present invention, as shown in Figure 4, the lifting drive assembly 480 is disposed below the cavity 430, and a second ejector is formed on the bottom wall of the cavity 430. Through hole b, the second through hole b is coaxially arranged with the first through hole a; the bottom end of the lifting rod 470 penetrates to the outside of the cavity 430 through the second through hole b; the lifting driving assembly 480 includes a lifting driving part 480a and an elastic The driving part 480b; the driving shaft of the lifting driving part 480a is used to contact the bottom end of the lifting rod 470 when rising, and push the lifting rod 470 to rise; the elastic driving part 480b is used to apply downward elastic force to the lifting rod 470 to lift the lifting rod 470. When the drive shaft of the lifting drive part 480a moves downward, the lifting rod 470 is driven downward.
在本發明實施例中,升降杆470的底端具有弧形凸面471,該弧形凸面471例如為半球面;升降驅動部480a的驅動軸的頂端具有水平接觸面e,在升降驅動部480a的驅動軸推動升降杆470上升時,水平接觸面e與弧形凸面471接觸。通過水平接觸面e對升降杆470的底端的弧形凸面471進行上頂的方式驅動升降杆470上升,能夠有效保證升降驅動部480a僅對升降杆470施加豎直向上的頂升力,不會對升降杆470施加水平 方向的力導致升降杆470的方向偏斜,進而能夠有效保證多個頂針450運動方向的穩定性,提高了晶圓10的水平度。 In the embodiment of the present invention, the bottom end of the lifting rod 470 has an arc-shaped convex surface 471, which is, for example, a hemispherical surface; the top end of the driving shaft of the lifting driving part 480a has a horizontal contact surface e. When the driving shaft pushes the lifting rod 470 upward, the horizontal contact surface e contacts the arc-shaped convex surface 471 . The lifting rod 470 is driven to rise by pushing up the arc-shaped convex surface 471 at the bottom end of the lifting rod 470 through the horizontal contact surface e, which can effectively ensure that the lifting driving part 480a only exerts a vertical upward lifting force on the lifting rod 470 and will not lift the lifting rod 470 . Lift rod 470 applies level The directional force causes the direction of the lifting rod 470 to deflect, which can effectively ensure the stability of the movement directions of the multiple ejector pins 450 and improve the levelness of the wafer 10 .
作為本發明的一種可選實施方式,如圖4所示,彈性驅動部480b包括彈簧481、擋環482和導向座483,導向座483與腔體430的底部固定連接,導向座483的底面形成有導向槽d,導向槽d的底面上形成有貫穿至導向座483的頂面的第三通孔c,該第三通孔c與第二通孔b連通。 As an optional embodiment of the present invention, as shown in Figure 4, the elastic driving part 480b includes a spring 481, a blocking ring 482 and a guide seat 483. The guide seat 483 is fixedly connected to the bottom of the cavity 430, and the bottom surface of the guide seat 483 forms There is a guide groove d, and a third through hole c penetrating to the top surface of the guide base 483 is formed on the bottom surface of the guide groove d. The third through hole c is connected with the second through hole b.
升降杆470的底端穿過第三通孔c和導向座483的導向槽d,擋環482和彈簧481均套設在升降杆470上,其中,擋環482位於導向槽d的底面下方,且與升降杆470固定連接;彈簧481位於導向槽d中且位於擋環482與導向槽d的底面之間,彈簧481用於向擋環482施加彈力,以使升降杆470下降。 The bottom end of the lifting rod 470 passes through the third through hole c and the guide groove d of the guide seat 483. The blocking ring 482 and the spring 481 are both sleeved on the lifting rod 470, where the blocking ring 482 is located below the bottom surface of the guide groove d. And fixedly connected with the lifting rod 470; the spring 481 is located in the guide groove d and between the blocking ring 482 and the bottom surface of the guide groove d. The spring 481 is used to apply elastic force to the blocking ring 482 to lower the lifting rod 470.
在本發明實施例中,彈性驅動部480b包括彈簧481、擋環482和導向座483,彈簧481套設在升降杆470上且位於導向座483的導向槽d中,從而能夠有效防止彈簧481向外彈出,提高裝置整體的可靠性。並且,彈簧481在升降杆470的外壁與導向槽d內壁的雙重導向作用下,通過彈力推動擋環482帶動升降杆470下降,進一步降低了升降杆470沿水平方向受到的分力,從而進一步保證了多個頂針450運動方向的穩定性,提高了晶圓10的水平度。 In the embodiment of the present invention, the elastic driving part 480b includes a spring 481, a blocking ring 482 and a guide seat 483. The spring 481 is sleeved on the lifting rod 470 and located in the guide groove d of the guide seat 483, thereby effectively preventing the spring 481 from moving towards the guide seat 483. pops out to improve the overall reliability of the device. Moreover, under the dual guiding action of the outer wall of the lifting rod 470 and the inner wall of the guide groove d, the spring 481 pushes the retaining ring 482 through the elastic force to drive the lifting rod 470 to descend, further reducing the component force received by the lifting rod 470 in the horizontal direction, thereby further This ensures the stability of the movement directions of the multiple ejector pins 450 and improves the levelness of the wafer 10 .
在開始進行半導體製程時,例如,對同一批次晶圓10中的第一片晶圓10進行半導體製程時,需由外界通過載入腔400向傳輸腔100中傳入托盤20,為實現自動運行該步驟,實現全面自動化控制,作為本發明的一種優選實施方式,如圖1、圖9所示,該晶圓傳輸系統還包括托盤支撐塊700,托盤支撐塊700的頂部具有用於承載托盤20的托盤支撐面,且 托盤支撐塊700在朝向第二傳輸組件500的方向形成有開口710。 When starting a semiconductor process, for example, when performing a semiconductor process on the first wafer 10 in the same batch of wafers 10 , the tray 20 needs to be introduced into the transfer chamber 100 from the outside through the loading chamber 400 . In order to achieve automatic Run this step to achieve comprehensive automated control. As a preferred embodiment of the present invention, as shown in Figures 1 and 9, the wafer transfer system also includes a tray support block 700. The top of the tray support block 700 has a structure for carrying the tray. 20mm pallet support surface, and The tray support block 700 is formed with an opening 710 in a direction toward the second transport assembly 500 .
如圖10所示,第二傳輸組件500還用於在開始進行半導體製程時伸入開口710,並由托盤支撐面的下方升高至高於托盤支撐面,從而將托盤支撐面上承載的托盤20取下,再將托盤20放入載入腔400中。 As shown in FIG. 10 , the second transmission assembly 500 is also used to extend into the opening 710 when the semiconductor process is started, and to be raised from below the tray support surface to above the tray support surface, thereby transferring the tray 20 carried on the tray support surface. Take it off and put the tray 20 into the loading cavity 400 .
為提高完成半導體製程後的晶圓10的冷卻效率,作為本發明的一種優選實施方式,如圖1所示,該晶圓傳輸系統還包括冷卻腔800,冷卻腔800與傳輸腔100連通。在每一片晶圓10加工完成後,第一傳輸組件200將裝有晶圓10的托盤20從反應腔30中取出後,先將其放入冷卻腔800中,待托盤20及其上承載的晶圓10冷卻至室溫後,再將其傳輸至校準腔300中,對托盤20進行校準,而後再將其放入載入腔400中使晶圓10與托盤20分離。 In order to improve the cooling efficiency of the wafer 10 after completing the semiconductor process, as a preferred embodiment of the present invention, as shown in FIG. 1 , the wafer transfer system further includes a cooling chamber 800 , and the cooling chamber 800 is connected with the transfer chamber 100 . After each wafer 10 is processed, the first transfer assembly 200 takes out the tray 20 containing the wafer 10 from the reaction chamber 30 and first puts it into the cooling chamber 800 . After the wafer 10 is cooled to room temperature, it is transferred to the calibration chamber 300 to calibrate the tray 20 , and then is placed into the loading chamber 400 to separate the wafer 10 from the tray 20 .
為保證不同腔室之間位置的穩定性,作為本發明的一種優選實施方式,如圖1所示,該晶圓傳輸系統還包括固定平臺900,載入腔400、晶圓校準器600、托盤支撐塊700、第二傳輸組件500均固定設置在固定平臺900上。 In order to ensure the stability of the positions between different chambers, as a preferred embodiment of the present invention, as shown in Figure 1, the wafer transfer system also includes a fixed platform 900, a loading chamber 400, a wafer aligner 600, and a tray. The support block 700 and the second transmission component 500 are both fixedly installed on the fixed platform 900 .
具體地,作為本發明的一種可選實施方式,如圖1所示,傳輸腔100為正八棱柱結構,載入腔400與腔室對接口分別位於傳輸腔100相對的兩個側面上,固定平臺900與載入腔400位置對應,校準腔300與冷卻腔800分別設置在傳輸腔100上與載入腔400一側相鄰的兩個側壁上,即圖1中傳輸腔100右側的上、下呈45°夾角的兩個側面上,傳輸腔100的中心與校準腔300的中心之間的連線以及傳輸腔100的中心與冷卻腔800的中心之間的連線,均與第二傳輸組件500和傳輸腔100的中心之間的連線呈45°夾角;第二傳輸組件500位於載入腔400背離傳輸腔100的一側,第二 傳輸組件500、載入腔400和傳輸腔100的中心位於同一直線上。 Specifically, as an optional embodiment of the present invention, as shown in Figure 1, the transmission chamber 100 has a regular octagonal prism structure, the loading chamber 400 and the chamber interface are respectively located on two opposite sides of the transmission chamber 100, and the fixed platform 900 corresponds to the position of the loading cavity 400. The calibration cavity 300 and the cooling cavity 800 are respectively provided on the two side walls of the transmission cavity 100 adjacent to the side of the loading cavity 400, that is, the upper and lower sides of the right side of the transmission cavity 100 in Figure 1 On the two sides with an included angle of 45°, the connection between the center of the transmission cavity 100 and the center of the calibration cavity 300 and the connection between the center of the transmission cavity 100 and the center of the cooling cavity 800 are both connected to the second transmission component. 500 and the center of the transfer chamber 100 form an included angle of 45°; the second transfer component 500 is located on the side of the loading cavity 400 away from the transfer cavity 100, and the second The centers of the transfer assembly 500, the loading chamber 400 and the transfer chamber 100 are located on the same straight line.
可選地,固定平臺900還包括用於設置片盒40的兩個片盒固定位,包括第一片盒固定位(在圖1中位於第二傳輸組件500上方)和第二片盒固定位(在圖1中位於第二傳輸組件500下方),分別用於設置裝載製程前晶圓和製程後晶圓的片盒40。 Optionally, the fixed platform 900 also includes two cassette fixing positions for setting the cassette 40, including a first cassette fixing position (located above the second transport assembly 500 in Figure 1) and a second cassette fixing position. (located below the second transport assembly 500 in FIG. 1 ), respectively used to set the cassettes 40 for loading pre-process wafers and post-process wafers.
為提高晶圓傳輸系統結構的緊湊性,提高晶圓10的傳輸精度及傳輸效率,作為本發明的一種優選實施方式,如圖1所示,兩個片盒固定位元分別位於第二傳輸組件500在垂直於第二傳輸組件500與載入腔400之間連線方向上的兩側(即圖1中第二傳輸組件500的上下兩側)。 In order to improve the compactness of the wafer transmission system structure and improve the transmission accuracy and transmission efficiency of the wafer 10, as a preferred embodiment of the present invention, as shown in Figure 1, two cassette fixed bits are respectively located in the second transmission component 500 is on both sides perpendicular to the connecting direction between the second transmission component 500 and the loading cavity 400 (ie, the upper and lower sides of the second transmission component 500 in FIG. 1 ).
第二傳輸組件500用於在將晶圓10由第一片盒固定位的片盒40中取出後,先將晶圓10傳入晶圓校準器600中,並在晶圓校準器600對晶圓10的旋轉方向進行校準後,通過傳輸口將晶圓10傳輸至載入腔400中的托盤20上;以及,在將晶圓10由載入腔中取出後,先將晶圓10傳入晶圓校準器600中,並在晶圓校準器600對晶圓10的旋轉方向進行校準後,將晶圓10傳輸至第二片盒固定位的片盒40中。 The second transfer component 500 is used to first transfer the wafer 10 into the wafer aligner 600 after taking the wafer 10 out of the wafer cassette 40 where the first wafer cassette is fixed, and align the wafer 10 in the wafer aligner 600 After the rotation direction of the circle 10 is calibrated, the wafer 10 is transferred to the tray 20 in the loading cavity 400 through the transfer port; and, after the wafer 10 is taken out of the loading cavity, the wafer 10 is first transferred in In the wafer aligner 600, and after the wafer aligner 600 calibrates the rotation direction of the wafer 10, the wafer 10 is transferred to the cassette 40 in the second cassette fixed position.
可選地,托盤支撐塊700與晶圓校準器600相對於第二傳輸組件500與載入腔400之間的連線對稱設置,例如,以圖1中的上下左右方向為基準,托盤支撐塊700位於第二傳輸組件500左上48°的方向,且托盤支撐塊700的開口710朝向第二傳輸組件500的中心,晶圓校準器600位於第二傳輸組件500左下48°的方向。 Optionally, the tray support block 700 and the wafer aligner 600 are arranged symmetrically with respect to the connection between the second transfer assembly 500 and the loading chamber 400. For example, based on the up, down, left and right directions in Figure 1, the tray support block 700 is located in a direction of 48° to the upper left of the second transfer assembly 500, and the opening 710 of the tray support block 700 is toward the center of the second transfer assembly 500. The wafer aligner 600 is located in a direction of 48° to the lower left of the second transfer assembly 500.
需要說明的是,為展示托盤20或晶圓10在各腔室、裝置工位元上時與該腔室、裝置之間的位置關係,圖1中各腔室、裝置均顯示為載入有托盤20或晶圓10的狀態。例如,校準腔300、載入腔400、冷卻腔 800均顯示為載入有托盤20及其上承載的晶圓10的狀態,托盤支撐塊700顯示為載入有托盤20的狀態,晶圓校準器600顯示為載入有晶圓10的狀態。然而在實際使用中,這些腔室、裝置工位元中僅部分工位上載有托盤20或晶圓10。 It should be noted that, in order to demonstrate the positional relationship between the tray 20 or the wafer 10 and the chamber or device when it is on each chamber or device station, each chamber and device in Figure 1 is shown as loaded. The state of the tray 20 or wafer 10. For example, calibration chamber 300, loading chamber 400, cooling chamber 800 is shown as being loaded with the tray 20 and the wafer 10 carried thereon, the tray support block 700 is shown as being loaded with the tray 20 , and the wafer aligner 600 is shown as being loaded with the wafer 10 . However, in actual use, only some of these chambers and device stations carry the trays 20 or wafers 10 .
作為本發明的第二個方面,提供一種半導體製程設備,包括晶圓傳輸系統和反應腔30,該晶圓傳輸系統用於向反應腔30中傳入承載有晶圓10的托盤20以及將承載有晶圓10的托盤20由反應腔30中取出,且該晶圓傳輸系統為本發明實施例提供的晶圓傳輸系統。 As a second aspect of the present invention, a semiconductor processing equipment is provided, including a wafer transfer system and a reaction chamber 30 . The wafer transfer system is used to transfer the tray 20 carrying the wafer 10 into the reaction chamber 30 and transfer the loaded tray 20 to the reaction chamber 30 . The tray 20 with the wafer 10 is taken out from the reaction chamber 30, and the wafer transfer system is a wafer transfer system provided by the embodiment of the present invention.
在本發明實施例提供的半導體製程設備中,晶圓傳輸系統包括傳輸腔100、校準腔300和載入腔400,第一傳輸組件200能夠配合校準腔300對托盤20的位置進行校準,並將校準後的托盤20放入載入腔400中,從而在第二傳輸組件500能夠將製程前的晶圓10放置在校準後的托盤20上,或者由校準後的托盤20上取下位置確定的晶圓10,實現將晶圓10自動放置在托盤20上以及自動將晶圓10由托盤20上取下,晶圓10及托盤20的整個傳輸過程無需人為干預,進而提高了半導體製程效率,並降低了晶圓表面附著顆粒造成晶圓污染或損傷的概率,提高了晶圓(例如,碳化矽晶圓)的產品良率。 In the semiconductor processing equipment provided by the embodiment of the present invention, the wafer transfer system includes a transfer cavity 100, a calibration cavity 300 and a loading cavity 400. The first transfer component 200 can cooperate with the calibration cavity 300 to calibrate the position of the tray 20, and The calibrated pallet 20 is placed into the loading cavity 400, so that the pre-process wafer 10 can be placed on the calibrated pallet 20 by the second transfer assembly 500, or the position determined by the removal position of the calibrated pallet 20. The wafer 10 can automatically place the wafer 10 on the tray 20 and automatically remove the wafer 10 from the tray 20. The entire transmission process of the wafer 10 and the tray 20 does not require human intervention, thereby improving the efficiency of the semiconductor process and It reduces the probability of wafer contamination or damage caused by particles attached to the wafer surface, and improves the product yield of wafers (for example, silicon carbide wafers).
為便於技術人員理解,以下提供一種利用本發明實施例提供的晶圓傳輸系統對同一批次晶圓進行半導體加工的具體實施例:在第一次製程開始前(即對第一片晶圓10進行半導體製程前),第二傳輸組件500伸入托盤支撐塊700的開口710,並由托盤支撐面的下方升高至高於托盤支撐塊700的托盤支撐面(如圖10所示),從而將托盤支撐面上承載的托盤20取下; 門閥驅動機構420驅動門閥410打開,第二傳輸組件500將托盤20送入載入腔400中並放置在基座440上(此時托盤20的旋轉方向未校準)。 In order to facilitate the understanding of technicians, the following provides a specific embodiment of using the wafer transfer system provided by the embodiment of the present invention to perform semiconductor processing on the same batch of wafers: before the first process starts (that is, the first wafer 10 (before semiconductor manufacturing process), the second transmission component 500 extends into the opening 710 of the tray support block 700 and is raised from below the tray support surface to above the tray support surface of the tray support block 700 (as shown in FIG. 10 ), thereby Remove the pallet 20 carried on the pallet support surface; The gate valve driving mechanism 420 drives the gate valve 410 to open, and the second transport assembly 500 sends the tray 20 into the loading chamber 400 and places it on the base 440 (the rotation direction of the tray 20 is not calibrated at this time).
門閥驅動機構420驅動門閥410關閉並將外界大氣與腔室環境隔絕,第一傳輸組件由載入腔400中取出托盤20(如圖11所示)。 The gate valve driving mechanism 420 drives the gate valve 410 to close and isolate the outside atmosphere from the chamber environment. The first transfer assembly takes out the tray 20 from the loading chamber 400 (as shown in FIG. 11 ).
第一傳輸組件將托盤20送入校準腔300中,並根據托盤校準器310的反饋信號(托盤20中心的水平位置相對於旋轉座的旋轉軸的水平位置沿X軸、Y軸方向的偏移量)調整托盤20的水平位置,使托盤20中心的水平位置與旋轉座的旋轉軸的水平位置對正。隨後將托盤20放置在旋轉座上,旋轉座驅動托盤20旋轉至托盤校準器310檢測到驅動托盤20上的缺口21旋轉至預設位置後停止旋轉。 The first transmission component sends the tray 20 into the calibration chamber 300, and adjusts the position of the tray 20 along the X-axis and Y-axis according to the feedback signal from the tray calibrator 310 (the horizontal position of the center of the tray 20 relative to the horizontal position of the rotation axis of the rotating base). (measurement) to adjust the horizontal position of the tray 20 so that the horizontal position of the center of the tray 20 is aligned with the horizontal position of the rotation axis of the rotating base. The tray 20 is then placed on the rotating base, and the rotating base drives the tray 20 to rotate until the tray calibrator 310 detects that the notch 21 on the driving tray 20 rotates to a preset position and then stops rotating.
第一傳輸組件將校準後的托盤20從校準腔300中取出,並再次放回載入腔400中的基座440上,頂針驅動組件驅動多個頂針450向上穿過托盤20上的多個頂針孔。 The first transport assembly takes the calibrated tray 20 out of the calibration chamber 300 and puts it back on the base 440 in the loading chamber 400 again. The ejector pin driving assembly drives the plurality of ejector pins 450 upward to pass through the plurality of ejector pins on the tray 20 . pinhole.
門閥驅動機構420驅動門閥410打開,第二傳輸組件500將第一片晶圓10由第一片盒固定位的片盒40中取出並放入晶圓校準器600中對晶圓的旋轉方向進行校準,再將校準後的晶圓10傳輸至載入腔400中升起的多個頂針450上(如圖12所示)。門閥驅動機構420驅動門閥410關閉並將外界大氣與腔室環境隔絕。 The gate valve driving mechanism 420 drives the gate valve 410 to open, and the second transfer assembly 500 takes out the first wafer 10 from the wafer cassette 40 where the first wafer cassette is fixed and puts it into the wafer aligner 600 to adjust the rotation direction of the wafer. After calibration, the calibrated wafer 10 is then transferred to the plurality of ejectors 450 raised in the loading cavity 400 (as shown in FIG. 12 ). The gate valve driving mechanism 420 drives the gate valve 410 to close and isolate the outside atmosphere from the chamber environment.
頂針驅動組件驅動多個頂針450向下縮回,使晶圓10落入托盤20上的容納槽22中。 The ejector pin driving assembly drives the plurality of ejector pins 450 to retract downward, so that the wafer 10 falls into the receiving groove 22 on the tray 20 .
第一傳輸組件將托盤20及其上承載的晶圓10由載入腔400中取出並傳入反應腔30中進行半導體製程。 The first transfer component takes out the tray 20 and the wafer 10 carried thereon from the loading chamber 400 and transfers it into the reaction chamber 30 for semiconductor processing.
在每一片晶圓10完成半導體製程後,第一傳輸組件將托盤20及其上承載的完成製程的晶圓10由反應腔30中取出並傳入冷卻腔800中待托盤20及其上承載的晶圓10冷卻至室溫後,再將其傳輸至校準腔300中,對托盤20進行校準,而後再將其放入載入腔400中。,頂針驅動組件驅動多個頂針450向上穿過托盤20上的多個頂針孔,使晶圓10與托盤20分離。 After each wafer 10 completes the semiconductor process, the first transport component takes out the tray 20 and the wafers 10 carried thereon from the reaction chamber 30 and transfers them to the cooling chamber 800 to wait for the tray 20 and the wafers 10 carried thereon. After the wafer 10 is cooled to room temperature, it is transferred to the calibration chamber 300 , the tray 20 is calibrated, and then it is placed into the loading chamber 400 . , the ejector pin driving assembly drives the plurality of ejector pins 450 upward through the plurality of ejector pin holes on the tray 20 to separate the wafer 10 from the tray 20 .
門閥驅動機構420驅動門閥410打開,第二傳輸組件500將晶圓10由多個頂針450上取下並放入晶圓校準器600中對晶圓的旋轉方向進行校準,再將校準後的晶圓10傳輸至第二片盒固定位的片盒40中。 The gate valve driving mechanism 420 drives the gate valve 410 to open. The second transfer assembly 500 removes the wafer 10 from the plurality of ejector pins 450 and puts it into the wafer aligner 600 to calibrate the rotation direction of the wafer. The calibrated wafer is then calibrated. The circle 10 is transferred to the cassette 40 in the second cassette fixing position.
隨後,第二傳輸組件500將下一片晶圓10由第一片盒固定位的片盒40中取出並放入晶圓校準器600中對晶圓的旋轉方向進行校準,再將校準後的晶圓10傳輸至載入腔400中升起的多個頂針450上。門閥驅動機構420驅動門閥410關閉並將外界大氣與腔室環境隔絕。 Subsequently, the second transfer assembly 500 takes out the next wafer 10 from the wafer cassette 40 where the first wafer cassette is fixed and puts it into the wafer aligner 600 to calibrate the rotation direction of the wafer, and then calibrates the calibrated wafer. The circle 10 is transferred to the plurality of ejector pins 450 raised in the loading chamber 400 . The gate valve driving mechanism 420 drives the gate valve 410 to close and isolate the outside atmosphere from the chamber environment.
重複第二傳輸組件500將待加工的晶圓10由第一片盒固定位的片盒40中取出至第二傳輸組件500將完成加工的晶圓10傳入第二片盒固定位的片盒40的步驟,即可實現晶圓10的全自動化生產。 Repeat the second transfer assembly 500 to take out the wafer 10 to be processed from the cassette 40 in the first cassette fixed position to the second transfer assembly 500 to transfer the processed wafer 10 into the second cassette fixed position. In 40 steps, fully automated production of wafer 10 can be achieved.
前述內容概括數項實施例之特徵,使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解,其等可容易地使用本揭露作為用於設計或修改用於實行本文仲介紹之實施例之相同目的及/或達成相同優點之其他製程及結構之一基礎。熟習此項技術者亦應瞭解,此等等效構造不背離本揭露之精神及範疇,且其等可在不背離本揭露之精神及範疇之情況下在本文中作出各種改變、置換及更改。 The foregoing content summarizes the features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can be variously changed, replaced and modified herein without departing from the spirit and scope of the present disclosure.
10:晶圓 10:wafer
20:托盤 20:pallet
30:反應腔室 30:Reaction chamber
40:片盒 40: film box
100:傳輸腔 100:Transmission cavity
200:第一傳輸組件 200: First transmission component
300:校準腔 300: Calibration cavity
310:托盤校準器 310:Pallet Calibrator
400:載入腔 400:Loading cavity
410:門閥 410:gate valve
500:第二傳輸組件 500: Second transmission component
600:晶圓校準器 600: Wafer aligner
700:托盤支撐塊 700:Pallet support block
800:冷卻腔 800: Cooling chamber
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CN114883234A (en) * | 2022-05-05 | 2022-08-09 | 希科半导体科技(苏州)有限公司 | Transfer device and method for automatically transferring multiple wafers and vapor deposition system |
CN114953231A (en) * | 2022-05-27 | 2022-08-30 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and calibration device |
CN115050677A (en) * | 2022-06-20 | 2022-09-13 | 上海福赛特机器人有限公司 | Wafer transmission device and method |
CN115116913B (en) * | 2022-06-22 | 2024-04-26 | 南京原磊纳米材料有限公司 | Multi-piece type wafer transmission mechanism |
CN116254599B (en) * | 2023-05-16 | 2023-08-08 | 南京原磊纳米材料有限公司 | Dynamic seal deposition device for epitaxy |
CN116815140B (en) * | 2023-06-21 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
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CN117316846B (en) * | 2023-11-30 | 2024-03-08 | 浙江果纳半导体技术有限公司 | Wafer transmission equipment |
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