TWI825860B - Plasma treatment device - Google Patents
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- TWI825860B TWI825860B TW111127052A TW111127052A TWI825860B TW I825860 B TWI825860 B TW I825860B TW 111127052 A TW111127052 A TW 111127052A TW 111127052 A TW111127052 A TW 111127052A TW I825860 B TWI825860 B TW I825860B
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- 238000009832 plasma treatment Methods 0.000 title claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 62
- 230000007246 mechanism Effects 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 10
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 239000012809 cooling fluid Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- -1 quartz glass Chemical compound 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01J37/32082—Radio frequency generated discharge
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Abstract
本發明對被處理物均勻地進行電漿處理。電漿處理裝置(1)包括:真空容器(2),於內部收容被處理物(W1);天線(6),設置於真空容器(2)的外部,且產生高頻磁場;磁場導入窗(3),設置於真空容器(2)的壁面(22),且將高頻磁場導入至真空容器(2)的內部;以及機構部(7),於天線(6)產生高頻磁場的狀態下,使天線(6)沿著磁場導入窗(3)平行移動。The invention performs plasma treatment on the object to be treated uniformly. The plasma processing device (1) includes: a vacuum container (2), which houses the object to be processed (W1) inside; an antenna (6), which is installed outside the vacuum container (2) and generates a high-frequency magnetic field; a magnetic field introduction window ( 3), which is installed on the wall surface (22) of the vacuum container (2) and introduces the high-frequency magnetic field into the interior of the vacuum container (2); and the mechanism part (7), when the antenna (6) generates the high-frequency magnetic field , making the antenna (6) move parallel along the magnetic field introduction window (3).
Description
本發明是有關於一種電漿處理裝置。The present invention relates to a plasma treatment device.
於專利文獻1中揭示了一種電漿處理裝置,所述電漿處理裝置包括:金屬板,形成有狹縫;電介質板,與金屬板接觸而被支持,並堵塞狹縫;以及天線,以與金屬板相向的方式設置於處理室的外部,並產生高頻磁場。專利文獻1所揭示的電漿處理裝置可將自天線產生的高頻磁場效率良好地供給至處理室。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本公開專利公報「日本專利特開2020-198282號公報」[Patent Document 1] Japanese Patent Publication "Japanese Patent Publication No. 2020-198282"
[發明所欲解決之課題][Problem to be solved by the invention]
於專利文獻1所揭示的電漿處理裝置中,於處理室的外部排列配置有呈直線狀的多個天線。由於越接近天線電漿越強,因此於所述電漿處理裝置中,存在無法對配置於處理室的被處理物均勻地進行電漿處理的問題。In the plasma processing apparatus disclosed in
本發明的一形態的目的在於對被處理物均勻地進行電漿處理。 [解決課題之手段] An object of one aspect of the present invention is to uniformly plasma process an object to be processed. [Means to solve the problem]
為解決所述課題,本發明的一形態的電漿處理裝置,包括:真空容器,於內部收容被處理物;天線,設置於所述真空容器的外部,且產生高頻磁場;磁場導入窗,設置於所述真空容器的壁面,且為了於所述真空容器的內部產生電漿,將所述高頻磁場導入至所述真空容器的內部;以及機構部,於所述天線產生所述高頻磁場的狀態下,使所述天線沿著所述磁場導入窗平行移動。 [發明的效果] In order to solve the above problems, a plasma processing apparatus according to one aspect of the present invention includes: a vacuum container that accommodates an object to be processed inside; an antenna that is installed outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window. is provided on the wall surface of the vacuum container, and introduces the high-frequency magnetic field into the interior of the vacuum container in order to generate plasma inside the vacuum container; and a mechanism part that generates the high-frequency magnetic field in the antenna Under the magnetic field state, the antenna is moved parallel along the magnetic field introduction window. [Effects of the invention]
根據本發明的一形態,可對被處理物均勻地進行電漿處理。According to one aspect of the present invention, the object to be treated can be subjected to plasma treatment uniformly.
〔實施方式1〕
<電漿處理裝置1的結構>
圖1是表示本發明的實施方式1的電漿處理裝置1的剖面結構的剖面圖。於圖1中,將天線6移動的方向設為X軸方向,將自真空容器2朝向磁場導入窗3的方向設為Z軸方向,將與X軸方向及Z軸方向此兩個方向正交的方向設為Y軸方向。X軸方向、Y軸方向及Z軸方向是相互正交的方向。圖1的符號101及符號102表示天線6藉由機構部7於X軸方向上移動的情形。再者,於圖1中,關於天線6及機構部7,並非剖面圖而是自Y軸方向觀察的圖。
[Embodiment 1]
<Structure of
如圖1所示,電漿處理裝置1是使用電感耦合型的電漿P1對基板等被處理物W1實施電漿處理的裝置。此處,基板是例如液晶顯示器或有機電致發光(electroluminescence,EL)顯示器等平板顯示器(flat panel display,FPD)用的基板、或可撓性顯示器用的可撓性基板等。另外,被處理物W1可為用於各種用途的半導體基板。進而,被處理物W1例如如工具等般並不限於基板狀的形態。對被處理物W1實施的處理例如是利用電漿化學氣相沈積(Chemical Vapor Deposition,CVD)法或者濺鍍法的膜形成、利用電漿的蝕刻、灰化、被覆膜除去等。As shown in FIG. 1 , the
電漿處理裝置1包括:真空容器2、磁場導入窗3、天線6、機構部7、高頻電源8以及保持部9。關於高頻電源8,示於圖2。於真空容器2的內部形成有被真空排氣且被導入氣體的處理室21。於處理室21內收容保持部9,保持部9是對被處理物W1進行保持的平台。真空容器2例如是金屬製的容器。於真空容器2的壁面22形成有於厚度方向貫通的開口部23。真空容器2電性接地。The
導入至處理室21的氣體只要與對收容於處理室21的被處理物W1實施的處理內容對應即可。例如,於藉由電漿CVD法對被處理物W1進行膜形成的情況下,氣體是原料氣體或用H
2等稀釋氣體將其稀釋後的氣體。若進一步列舉具體例,則於原料氣體為SiH
4的情況下,可於被處理物W1上形成Si膜,於原料氣體為SiH
4+NH
3的情況下,可於被處理物W1上形成SiN膜,於原料氣體為SiH
4+O
2的情況下,可於被處理物W1上形成SiO
2膜,於原料氣體為SiF
4+N
2的情況下,可於被處理物W1上形成SiN:F膜(氟化矽氮化膜)。
The gas introduced into the
磁場導入窗3具有金屬板4及電介質板5。磁場導入窗3為了於處理室21產生電漿P1,將自天線6產生的高頻磁場導入至處理室21。朝向Z軸方向依次配置金屬板4及電介質板5。The magnetic
圖2是僅示出圖1所示的電漿處理裝置1的說明上必要的構件的立體圖。再者,於圖2中,省略了真空容器2、電介質板5及框體B1等的圖示。圖2的符號201及符號202表示天線6藉由機構部7於X軸方向上移動的情形。FIG. 2 is a perspective view showing only components necessary for explanation of the
金屬板4以堵塞開口部23的方式設置於真空容器2的壁面22。於金屬板4形成有在Z軸方向上貫通金屬板4的多個狹縫41。多個狹縫41分別於X軸方向(第一方向)上延伸,並且多個狹縫41以沿著Y軸方向(第二方向)排列的方式配置。金屬板4以與被處理物W1的表面實質上平行的方式配置。The
電介質板5自真空容器2的外部側與金屬板4相接地設置,並且與金屬板4重疊。另外,電介質板5以自真空容器2的外部側堵塞多個狹縫41的方式設置於金屬板4的天線6側的表面。電介質板5將真空容器2的內部與外部隔離。藉此,可藉由電介質板5維持處理室21的真空狀態。更具體而言,藉由堵塞開口部23的金屬板4以及堵塞多個狹縫41的電介質板5來維持處理室21的真空狀態。The
電介質板5的整體由電介質物質構成,電介質板5呈平板狀。構成電介質板5的材料可為氧化鋁、碳化矽或氮化矽等陶瓷、石英玻璃、無鹼玻璃等無機材料、聚醯亞胺或鐵氟隆(Teflon)(註冊商標)等氟樹脂之類的樹脂材料。於構成電介質板5的材料中包含鐵氟隆的情況下,電介質板5局部地具有透過性的區域,亦可為於鐵氟隆片上接著有玻璃片的結構。The entire
天線6呈直線狀,設置於真空容器2的外部,且以與磁場導入窗3相向並且於Y軸方向上延伸的方式被機構部7支持。藉由天線6設置於真空容器2的外部,與天線6設置於真空容器2的內部的情況相比,可減小自天線6向被處理物W1的輻射熱的影響。藉此,亦可對包含膜材料的被處理物W1進行電漿處理。天線6以與收容於處理室21的被處理物W1的表面實質上平行的方式配置。The
天線6若經由機構部7自高頻電源8被施加高頻電力,則產生高頻磁場。藉此,於被處理室21包圍的空間產生感應電場,於所述空間中生成感應耦合型的電漿P1。自天線6產生的高頻磁場透過電介質板5及多個狹縫41而被供給至處理室21。When high-frequency power is applied from the high-
<機構部7的結構>
機構部7於天線6產生高頻磁場的狀態下使天線6沿著磁場導入窗3於X軸方向上平行移動。此時,機構部7使天線6沿著平面F1平行移動。平面F1與XY平面平行,並且與被處理物W1的表面平行。
<Structure of
天線6藉由於多個狹縫41延伸的方向即X軸方向上平行移動,可自狹縫41持續地向被處理物W1供給自天線6產生的高頻磁場,因此可有效率地對被處理物W1進行電漿處理。另外,可對表面積大的被處理物W1進行電漿處理。The
如圖2所示,機構部7具有臂A1~臂A6、以及連結部C1~連結部C4。當自高頻電源8向天線6供給高頻電力時,電流自高頻電源8按照臂A5、連結部C2、臂A2、連結部C1、臂A1、天線6、臂A3、連結部C3、臂A4、連結部C4及臂A6的順序流動。臂A1~臂A6分別是具有導電性的構件。As shown in FIG. 2 , the
臂A1~臂A6是用以對天線6進行支持並向天線6供給高頻電力的構件。臂A1具有直線部A11及旋轉軸A12。直線部A11的一端與天線6的供電側端部61連接,直線部A11的另一端與旋轉軸A12彎曲地連接。The arms A1 to A6 are members for supporting the
連結部C1以能夠轉動的方式將臂A1、臂A2間連結。連結部C1具有作為第一構件的第一圓板C11以及作為第二構件的第二圓板C12。第一圓板C11與旋轉軸A12一起受到固定。即,第一圓板C11固定於與連結部C1連接的臂A1的其中一個臂端。第二圓板C12與臂A2的旋轉軸A22一起受到固定。即,第二圓板C12固定於與連結部C1連接的臂A2的另一個臂端。The connection part C1 rotatably connects the arm A1 and the arm A2. The connection part C1 has a first circular plate C11 as a first member and a second circular plate C12 as a second member. The first circular plate C11 is fixed together with the rotation axis A12. That is, the first circular plate C11 is fixed to one of the arm ends of the arm A1 connected to the connecting portion C1. The second circular plate C12 is fixed together with the rotation axis A22 of the arm A2. That is, the second circular plate C12 is fixed to the other arm end of the arm A2 connected to the connection part C1.
臂A2具有直線部A21以及旋轉軸A22、旋轉軸A23。直線部A21的一端與旋轉軸A22彎曲地連接,直線部A21的另一端與旋轉軸A23彎曲地連接。Arm A2 has linear portion A21 and rotation axes A22 and A23. One end of the straight portion A21 is curvedly connected to the rotation axis A22, and the other end of the straight portion A21 is curvedly connected to the rotation axis A23.
連結部C2以能夠轉動的方式將臂A2、臂A5間連結。連結部C2具有作為第一構件的第一圓板C21以及作為第二構件的第二圓板C22。第一圓板C21與旋轉軸A23一起受到固定。即,第一圓板C21固定於與連結部C2連接的臂A2的其中一個臂端。第二圓板C22與作為旋轉軸的臂A5一起受到固定。即,第二圓板C22固定於與連結部C2連接的臂A5的另一個臂端。臂A5的其中一個臂端與高頻電源8電性連接。The connection part C2 rotatably connects the arms A2 and A5. The connection part C2 has a first circular plate C21 as a first member and a second circular plate C22 as a second member. The first circular plate C21 is fixed together with the rotation axis A23. That is, the first circular plate C21 is fixed to one of the arm ends of the arm A2 connected to the connecting portion C2. The second circular plate C22 is fixed together with the arm A5 as a rotation axis. That is, the second circular plate C22 is fixed to the other arm end of the arm A5 connected to the connection part C2. One of the arm ends of the arm A5 is electrically connected to the high-
臂A3的一端與天線6的接地側端部62連接。臂A3、連結部C3、臂A4及連結部C4的結構分別與臂A1、連結部C1、臂A2及連結部C2的結構相同。臂A6的其中一個臂端電性接地、即與地面連接,且臂A6的另一個臂端與連結部C4連接。One end of the arm A3 is connected to the ground-
<連結部C1的結構>
圖3是表示圖2所示的電漿處理裝置1所包括的機構部7的連結部C1的剖面結構的剖面圖。於連結部C1,較佳為第一圓板C11與第二圓板C12能夠相對地旋轉,並且第一圓板C11與第二圓板C12構成電容器。藉此,於藉由該電容器降低天線6所致的電抗的基礎上,藉由第一圓板C11與第二圓板C12相對地旋轉,可達成使天線6沿著磁場導入窗3平行移動的結構。以下進行具體說明。
<Structure of connection part C1>
FIG. 3 is a cross-sectional view showing the cross-sectional structure of the connection portion C1 of the
如圖3所示,連結部C1具有包含樹脂的框體B1。框體B1對第一圓板C11以及第二圓板C12隔著間隙G1平行地進行保持,並且將其支持為能夠相互地旋轉,以使第一圓板C11與第二圓板C12構成平行平板電容器。藉此,第一圓板C11與第二圓板C12於連結部C1能夠相互地旋轉,並且可構成平行平板電容器。於框體B1的內部,相互空開間隔且平行地形成有凹部71、凹部72。凹部71、凹部72分別呈環狀地形成於框體B1的內部。第一圓板C11進入凹部71,且第二圓板C12進入凹部72。As shown in FIG. 3 , the connection part C1 has a frame B1 made of resin. The frame B1 holds the first circular plate C11 and the second circular plate C12 in parallel across the gap G1 and supports them so as to be rotatable with each other so that the first circular plate C11 and the second circular plate C12 form a parallel flat plate. capacitor. Thereby, the first circular plate C11 and the second circular plate C12 can rotate with each other at the connecting portion C1, and can form a parallel plate capacitor. Inside the frame B1, recessed
於框體B1的兩側形成有開口部73、開口部74,旋轉軸A12進入開口部73,且旋轉軸A22進入開口部74。於開口部73與旋轉軸A12之間設置有密封構件75,於開口部74與旋轉軸A22之間設置有密封構件76。密封構件75、密封構件76用於防止框體B1的內部所填充的冷卻液洩漏至框體B1的外部,例如為O型環。
於天線6、臂A1~臂A6及連結部C1~連結部C4形成有供冷卻液流通的流路FL1。於連結部C1中,於旋轉軸A12、旋轉軸A22的內部形成有流路FL1。藉此,由於可抑制天線6、臂A1~臂A6及連結部C1~連結部C4的發熱,因此可降低自天線6、臂A1~臂A6及連結部C1~連結部C4對被處理物W1造成的熱影響。A flow path FL1 through which coolant flows is formed in the
天線6、臂A1~臂A6是於內部形成有供冷卻液流通的流路FL1的中空構造的管。藉由使冷卻液於形成於旋轉軸A12、旋轉軸A22的內部的流路FL1中流通,從而向框體B1的內部填充冷卻液。作為於流路FL1中流通的冷卻液,就電絕緣的觀點而言,較佳為高電阻的水,例如較佳為純水或與其接近的水。另外,作為該冷卻液,例如亦可使用氟系惰性液體等水以外的液體製冷劑。The
於機構部7設置有使連結部C1的第一圓板C11與第二圓板C12相對地旋轉的馬達M1、馬達M2。具體而言,馬達M1設置於旋轉軸A12,且馬達M2設置於旋轉軸A22。馬達M1、馬達M2與電漿處理裝置1所包括的控制部10電性連接。The
藉由馬達M1進行旋轉,旋轉軸A12進行旋轉,與旋轉軸A12連接的直線部A11繞與Y軸方向平行且沿著旋轉軸A12的軸進行旋轉。藉由馬達M2進行旋轉,旋轉軸A22進行旋轉,與旋轉軸A22連接的直線部A21繞與Y軸方向平行且沿著旋轉軸A22的軸進行旋轉。When the motor M1 rotates, the rotation axis A12 rotates, and the linear portion A11 connected to the rotation axis A12 rotates around an axis parallel to the Y-axis direction and along the rotation axis A12. When the motor M2 rotates, the rotation axis A22 rotates, and the linear portion A21 connected to the rotation axis A22 rotates around an axis parallel to the Y-axis direction and along the rotation axis A22.
控制部10藉由馬達M1、馬達M2的旋轉角度對天線6的平行移動進行控制。控制部10向馬達M1、馬達M2發送控制訊號,以使天線6沿著圖1所示的平面F1平行移動。藉由利用馬達M1、馬達M2使連結部C1的第一圓板C11與第二圓板C12相對地旋轉,可藉由控制部10容易地進行基於馬達M1、馬達M2的旋轉動作的天線6的定位。連結部C2~連結部C4的剖面結構與圖3所示的連結部C1的剖面結構相同。馬達M2亦可設置於旋轉軸A23上而非設置於旋轉軸A22上。The
藉由以上所述,於電漿處理裝置1中,由於產生高頻磁場的天線6相對於設置於真空容器2的壁面22的磁場導入窗3而平行移動,因此可對被處理物W1均勻地進行電漿處理。另外,由於機構部7使天線6於真空容器2的外部平行移動,因此可抑制於處理室21內設置移動機構時顆粒的產生。As described above, in the
〔實施方式2〕
以下說明本發明的實施方式2。再者,為了便於說明,對具有與實施方式1中說明的構件相同功能的構件標注相同的符號,且不重覆其說明。圖4是表示本發明的實施方式2的電漿處理裝置1A的剖面結構的剖面圖。
[Embodiment 2]
如圖4所示,電漿處理裝置1A與實施方式1的電漿處理裝置1的不同點在於包括檢測部11。檢測部11對由天線6產生的電漿P1的發光進行檢測。具體而言,檢測部11例如是分光器,對特定波長的發光強度進行檢測。檢測部11於處理室21內設置有多個,且配置於被處理物W1與金屬板4之間。多個檢測部11於X軸方向上排列,且以與被處理物W1的表面實質上平行的方式配置。As shown in FIG. 4 ,
控制部10亦與多個檢測部11連接,基於由多個檢測部11檢測出的電漿P1的發光,對藉由機構部7進行的天線6的平行移動進行控制。具體而言,控制部10基於由多個檢測部11檢測出的特定波長下的電漿P1的發光強度,對基於機構部7的天線6的移動速度進行控制。藉此,能夠一面對電漿P1的發光進行檢測一面調整天線6的位置,因此可容易地進行電漿P1的處理的調整。The
〔實施方式3〕
以下說明本發明的實施方式3。再者,為了便於說明,對具有與實施方式1中說明的構件相同功能的構件標注相同的符號,且不重覆其說明。圖5是僅示出本發明的實施方式3的電漿處理裝置1B的說明上必要的構件的立體圖。再者,於圖5中,省略了真空容器2及電介質板5等的圖示。圖5的符號301及符號302表示天線6藉由機構部7A於X軸方向上移動的情形。
[Embodiment 3]
如圖5所示,電漿處理裝置1B與實施方式1的電漿處理裝置1的不同點在於機構部7被變更為機構部7A。機構部7A具有連接部81、臂82~臂85、台車91、以及軌道93、軌道94。連接部81經由配線W2與高頻電源8電性連接,並且與臂82、臂84電性連接。臂82~臂85分別是具有導電性的構件。As shown in FIG. 5 , the
臂82的一端與連接部81電性連接,臂82的另一端與臂83的一端彎曲地連接。臂83的另一端與天線6的一端連接。臂84的一端與連接部81電性連接,臂84的另一端與臂85的一端彎曲地連接。臂85的另一端與天線6的另一端連接。One end of the
連接部81設置於台車91上,台車91的車輪92於軌道93、軌道94上移動。軌道93、軌道94以與被處理物W1的表面實質上平行的方式配置。軌道93、軌道94於X軸方向上延伸。The connecting
藉由車輪92於軌道93、軌道94上移動,天線6沿著磁場導入窗3平行移動。於車輪92設置有未圖示的馬達,該馬達與控制部10電性連接。控制部10藉由設置於車輪92的馬達的旋轉角度對天線6的平行移動進行控制。As the
〔實施方式4〕
以下說明本發明的實施方式4。再者,為了便於說明,對具有與實施方式1中說明的構件相同功能的構件標注相同的符號,且不重覆其說明。圖6是表示本發明的實施方式3的電漿處理裝置所包括的機構部的連結部CN1、連結部CN2的剖面結構的剖面圖。於圖6中省略了控制部10。
[Embodiment 4]
於實施方式3的電漿處理裝置中,與實施方式1的電漿處理裝置1相比,如圖6的符號401所示,連結部C1被變更為連結部CN1,旋轉軸A12被變更為臂構件AR1,框體B1被變更為框體B2。連結部CN1具有作為第一構件的框體B2以及作為第二構件的第二圓板C12。框體B2與臂構件AR1一起受到固定。即,框體B2固定於與連結部CN1連接的臂的其中一個臂端。亦可於臂構件AR1形成流路FL1。框體B2是具有導電性的構件。In the plasma processing apparatus of
於框體B2的單側形成開口部72A,旋轉軸A22進入開口部72A。於開口部72A與旋轉軸A22之間設置有密封構件73A。密封構件73A用於防止框體B2的內部所填充的冷卻液洩漏至框體B2的外部,例如為O型環。An
另外,框體B2以及第二圓板C12能夠相對地旋轉,並且框體B2與第二圓板C12構成電容器。具體而言,於框體B2的內壁71A與第二圓板C12之間構成電容器。In addition, the frame B2 and the second disc C12 are relatively rotatable, and the frame B2 and the second disc C12 constitute a capacitor. Specifically, a capacitor is formed between the
旋轉軸A22於開口部72A被密封構件73A支持為能夠旋轉。即,框體B2將第二圓板C12支持為能夠旋轉。藉此,可達成框體B2不旋轉地被固定、並且第二圓板C12能夠旋轉的結構。因此,不需要馬達M1,從而可減少旋轉所需的馬達的數量。The rotation shaft A22 is rotatably supported by the sealing
<變形例>
圖6的符號402是表示圖6的符號401所示的連結部CN1的變形例的剖面結構的剖面圖。如圖6的符號402所示,與連結部CN1相比,連結部CN2可將框體B2變更為框體B3,將旋轉軸A22變更為旋轉軸AR2。
<Modification>
Reference numeral 402 in FIG. 6 is a cross-sectional view showing a cross-sectional structure of a modified example of the connection portion CN1 indicated by
連結部CN2具有作為第一構件的框體B3以及作為第二構件的圓板CA、圓板CB、圓板CC。框體B3與臂構件AR1一起受到固定。即,框體B3固定於與連結部CN2連接的臂的其中一個臂端。框體B3是具有導電性的構件。The connection part CN2 has the frame B3 as a 1st member, and the circular plate CA, the circular plate CB, and the circular plate CC as the 2nd member. The frame B3 is fixed together with the arm member AR1. That is, the frame B3 is fixed to one of the arm ends of the arms connected to the connection part CN2. The frame B3 is a conductive member.
於框體B3的單側形成有開口部74B,旋轉軸AR2進入開口部74B。於開口部74B與旋轉軸AR2之間設置有密封構件75B。密封構件75B用於防止框體B3的內部所填充的冷卻液洩漏至框體B3的外部,例如為O型環。An
另外,框體B3與圓板CA、圓板CB、圓板CC能夠相對地旋轉,並且框體B3與圓板CA、圓板CB、圓板CC構成電容器。圓板CA、圓板CB、圓板CC相互空開間隔且平行地設置於旋轉軸AR2。於框體B3的內部,相互空開間隔且平行地形成有凸部72B、凸部73B。凸部72B、凸部73B分別呈環狀地形成於框體B3的內部。In addition, the frame B3 and the circular plates CA, the circular plates CB, and the circular plates CC are relatively rotatable, and the frame B3 and the circular plates CA, the circular plates CB, and the circular plates CC constitute a capacitor. The circular plates CA, the circular plates CB, and the circular plates CC are spaced apart from each other and arranged in parallel to the rotation axis AR2. Inside the frame B3,
圓板CA配置於框體B3的內壁71B與凸部72B之間,且圓板CB配置於凸部72B與凸部73B之間,圓板CC配置於凸部73B的附近。藉此,於圓板CA與凸部72B之間構成電容器,於圓板CB與凸部72B、凸部73B之間構成電容器,於圓板CC與凸部73B之間構成電容器。旋轉軸AR2於開口部74B被密封構件75B支持為能夠旋轉。即,框體B3將圓板CA、圓板CB、圓板CC支持為能夠旋轉。The circular plate CA is arranged between the
本發明並不限定於以上所述的各實施方式,於請求項所示的範圍內能夠進行各種變更,關於將不同實施方式中分別揭示的技術手段適當組合而得的實施方式,亦包含於本發明的技術範圍內。The present invention is not limited to each embodiment described above, and various modifications can be made within the scope indicated in the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in this disclosure. within the technical scope of the invention.
1、1A、1B:電漿處理裝置
2:真空容器
3:磁場導入窗
4:金屬板
5:電介質板
6:天線
7、7A:機構部
8:高頻電源
9:保持部
10:控制部
11:檢測部
21:處理室
22:壁面
23:開口部
41:狹縫
61:供電側端部
62:接地側端部
71、72:凹部
71A、71B:內壁
72B、73B:凸部
72A、73、74、74B:開口部
73A、75、75B、76:密封構件
81:連接部
82~85、A1~A6:臂
91:台車
92:車輪
93、94:軌道
101、102、201、202、301、302、401、402:符號
A11:直線部
A12:旋轉軸
A21:直線部
A22、A23、AR2:旋轉軸
AR1:臂構件
B1:框體
B2、B3:框體(第一構件)
C1~C4、CN1、CN2:連結部
C11、C21:第一圓板(第一構件)
C12、C22:第二圓板(第二構件、圓板)
CA、CB、CC:圓板
F1:平面
G1:間隙
M1、M2:馬達
P1:電漿
W1:被處理物
W2:配線
X、Y、Z:軸
1, 1A, 1B: Plasma treatment device
2: Vacuum container
3: Magnetic field introduction window
4:Metal plate
5: Dielectric board
6:
圖1是表示本發明的實施方式1的電漿處理裝置的剖面結構的剖面圖。
圖2是圖1所示的電漿處理裝置的立體圖。
圖3是表示圖2所示的電漿處理裝置所包括的機構部的連結部的剖面結構的剖面圖。
圖4是表示本發明的實施方式2的電漿處理裝置的剖面結構的剖面圖。
圖5是本發明的實施方式3的電漿處理裝置的立體圖。
圖6是表示本發明的實施方式3的電漿處理裝置所包括的機構部的連結部的剖面結構的剖面圖。
FIG. 1 is a cross-sectional view showing the cross-sectional structure of the plasma processing apparatus according to
1:電漿處理裝置 1: Plasma treatment device
2:真空容器 2: Vacuum container
3:磁場導入窗 3: Magnetic field introduction window
4:金屬板 4:Metal plate
5:電介質板 5: Dielectric board
6:天線 6:Antenna
7:機構部 7: Institutional Department
9:保持部 9:Maintenance Department
21:處理室 21:Processing room
22:壁面 22:Wall
23:開口部 23:Opening part
101、102:符號 101, 102: Symbols
F1:平面 F1: Plane
P1:電漿 P1: Plasma
W1:被處理物 W1: object to be processed
X、Y、Z:軸 X, Y, Z: axis
Claims (9)
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CN101622698A (en) * | 2007-03-08 | 2010-01-06 | 东京毅力科创株式会社 | Plasma processing apparatus, plasma processing method, and storage medium |
TW201145345A (en) * | 2010-02-19 | 2011-12-16 | Ulvac Inc | Plasma processing device and plasma processing method |
US20150129133A1 (en) * | 2013-11-12 | 2015-05-14 | Allied Techfinders Co., Ltd. | Plasma device |
TW202046372A (en) * | 2019-06-05 | 2020-12-16 | 日商日新電機股份有限公司 | Plasma processing apparatus |
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JP2004055600A (en) * | 2002-07-16 | 2004-02-19 | Tokyo Electron Ltd | Plasma processing apparatus |
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CN101622698A (en) * | 2007-03-08 | 2010-01-06 | 东京毅力科创株式会社 | Plasma processing apparatus, plasma processing method, and storage medium |
TW201145345A (en) * | 2010-02-19 | 2011-12-16 | Ulvac Inc | Plasma processing device and plasma processing method |
US20150129133A1 (en) * | 2013-11-12 | 2015-05-14 | Allied Techfinders Co., Ltd. | Plasma device |
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