TWI825860B - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

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TWI825860B
TWI825860B TW111127052A TW111127052A TWI825860B TW I825860 B TWI825860 B TW I825860B TW 111127052 A TW111127052 A TW 111127052A TW 111127052 A TW111127052 A TW 111127052A TW I825860 B TWI825860 B TW I825860B
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antenna
magnetic field
plasma processing
plasma
vacuum container
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TW202306443A (en
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松尾大輔
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日商日新電機股份有限公司
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract

本發明對被處理物均勻地進行電漿處理。電漿處理裝置（1）包括：真空容器（2），於內部收容被處理物（W1）；天線（6），設置於真空容器（2）的外部，且產生高頻磁場；磁場導入窗（3），設置於真空容器（2）的壁面（22），且將高頻磁場導入至真空容器（2）的內部；以及機構部（7），於天線（6）產生高頻磁場的狀態下，使天線（6）沿著磁場導入窗（3）平行移動。The invention performs plasma treatment on the object to be treated uniformly. The plasma processing device (1) includes: a vacuum container (2), which houses the object to be processed (W1) inside; an antenna (6), which is installed outside the vacuum container (2) and generates a high-frequency magnetic field; a magnetic field introduction window ( 3), which is installed on the wall surface (22) of the vacuum container (2) and introduces the high-frequency magnetic field into the interior of the vacuum container (2); and the mechanism part (7), when the antenna (6) generates the high-frequency magnetic field , making the antenna (6) move parallel along the magnetic field introduction window (3).

Description

電漿處理裝置Plasma treatment device

本發明是有關於一種電漿處理裝置。The present invention relates to a plasma treatment device.

於專利文獻1中揭示了一種電漿處理裝置，所述電漿處理裝置包括：金屬板，形成有狹縫；電介質板，與金屬板接觸而被支持，並堵塞狹縫；以及天線，以與金屬板相向的方式設置於處理室的外部，並產生高頻磁場。專利文獻1所揭示的電漿處理裝置可將自天線產生的高頻磁場效率良好地供給至處理室。 [現有技術文獻] [專利文獻] Patent Document 1 discloses a plasma processing device that includes a metal plate with a slit formed therein, a dielectric plate that is supported in contact with the metal plate and blocks the slit, and an antenna that communicates with the metal plate. The metal plates are placed outside the processing chamber in such a way that they face each other and generate a high-frequency magnetic field. The plasma processing apparatus disclosed in Patent Document 1 can efficiently supply the high-frequency magnetic field generated from the antenna to the processing chamber. [Prior art documents] [Patent Document]

[專利文獻1]日本公開專利公報「日本專利特開2020-198282號公報」[Patent Document 1] Japanese Patent Publication "Japanese Patent Publication No. 2020-198282"

[發明所欲解決之課題][Problem to be solved by the invention]

於專利文獻1所揭示的電漿處理裝置中，於處理室的外部排列配置有呈直線狀的多個天線。由於越接近天線電漿越強，因此於所述電漿處理裝置中，存在無法對配置於處理室的被處理物均勻地進行電漿處理的問題。In the plasma processing apparatus disclosed in Patent Document 1, a plurality of linear antennas are arranged in an array outside the processing chamber. Since the plasma is stronger as it is closer to the antenna, there is a problem that the plasma processing apparatus cannot perform plasma processing uniformly on the object to be processed arranged in the processing chamber.

本發明的一形態的目的在於對被處理物均勻地進行電漿處理。 [解決課題之手段] An object of one aspect of the present invention is to uniformly plasma process an object to be processed. [Means to solve the problem]

為解決所述課題，本發明的一形態的電漿處理裝置，包括：真空容器，於內部收容被處理物；天線，設置於所述真空容器的外部，且產生高頻磁場；磁場導入窗，設置於所述真空容器的壁面，且為了於所述真空容器的內部產生電漿，將所述高頻磁場導入至所述真空容器的內部；以及機構部，於所述天線產生所述高頻磁場的狀態下，使所述天線沿著所述磁場導入窗平行移動。 [發明的效果] In order to solve the above problems, a plasma processing apparatus according to one aspect of the present invention includes: a vacuum container that accommodates an object to be processed inside; an antenna that is installed outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window. is provided on the wall surface of the vacuum container, and introduces the high-frequency magnetic field into the interior of the vacuum container in order to generate plasma inside the vacuum container; and a mechanism part that generates the high-frequency magnetic field in the antenna Under the magnetic field state, the antenna is moved parallel along the magnetic field introduction window. [Effects of the invention]

根據本發明的一形態，可對被處理物均勻地進行電漿處理。According to one aspect of the present invention, the object to be treated can be subjected to plasma treatment uniformly.

〔實施方式1〕 ＜電漿處理裝置1的結構＞ 圖1是表示本發明的實施方式1的電漿處理裝置1的剖面結構的剖面圖。於圖1中，將天線6移動的方向設為X軸方向，將自真空容器2朝向磁場導入窗3的方向設為Z軸方向，將與X軸方向及Z軸方向此兩個方向正交的方向設為Y軸方向。X軸方向、Y軸方向及Z軸方向是相互正交的方向。圖1的符號101及符號102表示天線6藉由機構部7於X軸方向上移動的情形。再者，於圖1中，關於天線6及機構部7，並非剖面圖而是自Y軸方向觀察的圖。 [Embodiment 1] <Structure of plasma processing device 1> FIG. 1 is a cross-sectional view showing the cross-sectional structure of a plasma processing apparatus 1 according to Embodiment 1 of the present invention. In FIG. 1 , let the direction in which the antenna 6 moves be the X-axis direction, let the direction from the vacuum container 2 toward the magnetic field introduction window 3 be the Z-axis direction, and let the two directions orthogonal to the The direction is set to the Y-axis direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are mutually orthogonal directions. Symbols 101 and 102 in FIG. 1 represent a state in which the antenna 6 moves in the X-axis direction by the mechanism unit 7 . In addition, in FIG. 1 , the antenna 6 and the mechanism part 7 are not cross-sectional views but views viewed from the Y-axis direction.

如圖1所示，電漿處理裝置1是使用電感耦合型的電漿P1對基板等被處理物W1實施電漿處理的裝置。此處，基板是例如液晶顯示器或有機電致發光（electroluminescence，EL）顯示器等平板顯示器（flat panel display，FPD）用的基板、或可撓性顯示器用的可撓性基板等。另外，被處理物W1可為用於各種用途的半導體基板。進而，被處理物W1例如如工具等般並不限於基板狀的形態。對被處理物W1實施的處理例如是利用電漿化學氣相沈積（Chemical Vapor Deposition，CVD）法或者濺鍍法的膜形成、利用電漿的蝕刻、灰化、被覆膜除去等。As shown in FIG. 1 , the plasma processing device 1 is a device that performs plasma processing on a target object W1 such as a substrate using an inductively coupled plasma P1. Here, the substrate is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, a flexible substrate for a flexible display, or the like. In addition, the object W1 to be processed may be a semiconductor substrate used for various purposes. Furthermore, the object W1 to be processed, such as a tool, is not limited to a substrate-shaped form. The processing performed on the object W1 is, for example, film formation using a plasma chemical vapor deposition (CVD) method or a sputtering method, etching using plasma, ashing, and coating film removal.

電漿處理裝置1包括：真空容器2、磁場導入窗3、天線6、機構部7、高頻電源8以及保持部9。關於高頻電源8，示於圖2。於真空容器2的內部形成有被真空排氣且被導入氣體的處理室21。於處理室21內收容保持部9，保持部9是對被處理物W1進行保持的平台。真空容器2例如是金屬製的容器。於真空容器2的壁面22形成有於厚度方向貫通的開口部23。真空容器2電性接地。The plasma processing apparatus 1 includes a vacuum container 2 , a magnetic field introduction window 3 , an antenna 6 , a mechanism part 7 , a high-frequency power supply 8 and a holding part 9 . The high-frequency power supply 8 is shown in FIG. 2 . A processing chamber 21 in which vacuum is exhausted and gas is introduced is formed inside the vacuum container 2 . The holding part 9 is housed in the processing chamber 21 and is a platform that holds the object W1 to be processed. The vacuum container 2 is, for example, a metal container. An opening 23 penetrating through the wall surface 22 of the vacuum container 2 in the thickness direction is formed. The vacuum container 2 is electrically grounded.

導入至處理室21的氣體只要與對收容於處理室21的被處理物W1實施的處理內容對應即可。例如，於藉由電漿CVD法對被處理物W1進行膜形成的情況下，氣體是原料氣體或用H 2等稀釋氣體將其稀釋後的氣體。若進一步列舉具體例，則於原料氣體為SiH 4的情況下，可於被處理物W1上形成Si膜，於原料氣體為SiH 4+NH 3的情況下，可於被處理物W1上形成SiN膜，於原料氣體為SiH 4+O 2的情況下，可於被處理物W1上形成SiO 2膜，於原料氣體為SiF 4+N 2的情況下，可於被處理物W1上形成SiN：F膜（氟化矽氮化膜）。 The gas introduced into the processing chamber 21 only needs to correspond to the processing content to be performed on the object W1 accommodated in the processing chamber 21 . For example, when forming a film on the object W1 to be processed by the plasma CVD method, the gas is a raw material gas or a gas diluted with a diluting gas such as H 2 . If further specific examples are given, when the source gas is SiH 4 , a Si film can be formed on the object W1 to be processed, and when the source gas is SiH 4 +NH 3 , SiN can be formed on the object W1 to be processed. Film, when the raw material gas is SiH 4 +O 2 , a SiO 2 film can be formed on the object to be processed W1, and when the raw material gas is SiF 4 +N 2 , an SiN film can be formed on the object to be processed W1: F film (fluorosilicone nitride film).

磁場導入窗3具有金屬板4及電介質板5。磁場導入窗3為了於處理室21產生電漿P1，將自天線6產生的高頻磁場導入至處理室21。朝向Z軸方向依次配置金屬板4及電介質板5。The magnetic field introduction window 3 has a metal plate 4 and a dielectric plate 5 . The magnetic field introduction window 3 introduces the high-frequency magnetic field generated from the antenna 6 into the processing chamber 21 in order to generate plasma P1 in the processing chamber 21 . The metal plate 4 and the dielectric plate 5 are arranged in order toward the Z-axis direction.

圖2是僅示出圖1所示的電漿處理裝置1的說明上必要的構件的立體圖。再者，於圖2中，省略了真空容器2、電介質板5及框體B1等的圖示。圖2的符號201及符號202表示天線6藉由機構部7於X軸方向上移動的情形。FIG. 2 is a perspective view showing only components necessary for explanation of the plasma processing apparatus 1 shown in FIG. 1 . In addition, in FIG. 2 , illustration of the vacuum container 2 , the dielectric plate 5 , the frame B1 , etc. is omitted. Symbols 201 and 202 in FIG. 2 indicate that the antenna 6 moves in the X-axis direction by the mechanism part 7 .

金屬板4以堵塞開口部23的方式設置於真空容器2的壁面22。於金屬板4形成有在Z軸方向上貫通金屬板4的多個狹縫41。多個狹縫41分別於X軸方向（第一方向）上延伸，並且多個狹縫41以沿著Y軸方向（第二方向）排列的方式配置。金屬板4以與被處理物W1的表面實質上平行的方式配置。The metal plate 4 is provided on the wall surface 22 of the vacuum container 2 so as to block the opening 23 . The metal plate 4 is formed with a plurality of slits 41 penetrating the metal plate 4 in the Z-axis direction. The plurality of slits 41 each extend in the X-axis direction (first direction), and the plurality of slits 41 are arranged along the Y-axis direction (second direction). The metal plate 4 is arranged substantially parallel to the surface of the object W1.

電介質板5自真空容器2的外部側與金屬板4相接地設置，並且與金屬板4重疊。另外，電介質板5以自真空容器2的外部側堵塞多個狹縫41的方式設置於金屬板4的天線6側的表面。電介質板5將真空容器2的內部與外部隔離。藉此，可藉由電介質板5維持處理室21的真空狀態。更具體而言，藉由堵塞開口部23的金屬板4以及堵塞多個狹縫41的電介質板5來維持處理室21的真空狀態。The dielectric plate 5 is provided in contact with the metal plate 4 from the outside side of the vacuum container 2 and overlaps the metal plate 4 . In addition, the dielectric plate 5 is provided on the surface of the metal plate 4 on the antenna 6 side so as to block the plurality of slits 41 from the outside of the vacuum container 2 . The dielectric plate 5 isolates the inside of the vacuum container 2 from the outside. Thereby, the vacuum state of the processing chamber 21 can be maintained by the dielectric plate 5 . More specifically, the vacuum state of the processing chamber 21 is maintained by the metal plate 4 that closes the opening 23 and the dielectric plate 5 that closes the plurality of slits 41 .

電介質板5的整體由電介質物質構成，電介質板5呈平板狀。構成電介質板5的材料可為氧化鋁、碳化矽或氮化矽等陶瓷、石英玻璃、無鹼玻璃等無機材料、聚醯亞胺或鐵氟隆（Teflon）（註冊商標）等氟樹脂之類的樹脂材料。於構成電介質板5的材料中包含鐵氟隆的情況下，電介質板5局部地具有透過性的區域，亦可為於鐵氟隆片上接著有玻璃片的結構。The entire dielectric plate 5 is made of a dielectric material, and the dielectric plate 5 has a flat plate shape. The material constituting the dielectric plate 5 may be alumina, ceramics such as silicon carbide or silicon nitride, inorganic materials such as quartz glass, alkali-free glass, or fluororesins such as polyimide or Teflon (registered trademark). resin material. When the material constituting the dielectric plate 5 contains Teflon, the dielectric plate 5 may have a partially transparent area, or may have a structure in which a glass sheet is bonded to the Teflon sheet.

天線6呈直線狀，設置於真空容器2的外部，且以與磁場導入窗3相向並且於Y軸方向上延伸的方式被機構部7支持。藉由天線6設置於真空容器2的外部，與天線6設置於真空容器2的內部的情況相比，可減小自天線6向被處理物W1的輻射熱的影響。藉此，亦可對包含膜材料的被處理物W1進行電漿處理。天線6以與收容於處理室21的被處理物W1的表面實質上平行的方式配置。The antenna 6 has a linear shape, is installed outside the vacuum container 2 , and is supported by the mechanism part 7 so as to face the magnetic field introduction window 3 and extend in the Y-axis direction. By disposing the antenna 6 outside the vacuum vessel 2 , compared with the case where the antenna 6 is disposed inside the vacuum vessel 2 , the influence of radiated heat from the antenna 6 to the object W1 can be reduced. Thereby, the object to be processed W1 including the membrane material can also be subjected to plasma treatment. The antenna 6 is arranged substantially parallel to the surface of the object W1 accommodated in the processing chamber 21 .

天線6若經由機構部7自高頻電源8被施加高頻電力，則產生高頻磁場。藉此，於被處理室21包圍的空間產生感應電場，於所述空間中生成感應耦合型的電漿P1。自天線6產生的高頻磁場透過電介質板5及多個狹縫41而被供給至處理室21。When high-frequency power is applied from the high-frequency power supply 8 via the mechanism unit 7 , the antenna 6 generates a high-frequency magnetic field. Thereby, an induced electric field is generated in the space surrounded by the processing chamber 21 , and the inductive coupling type plasma P1 is generated in the space. The high-frequency magnetic field generated from the antenna 6 is supplied to the processing chamber 21 through the dielectric plate 5 and the plurality of slits 41 .

＜機構部7的結構＞ 機構部7於天線6產生高頻磁場的狀態下使天線6沿著磁場導入窗3於X軸方向上平行移動。此時，機構部7使天線6沿著平面F1平行移動。平面F1與XY平面平行，並且與被處理物W1的表面平行。 ＜Structure of Organization Department 7＞ The mechanism part 7 moves the antenna 6 parallel in the X-axis direction along the magnetic field introduction window 3 in a state where the antenna 6 generates a high-frequency magnetic field. At this time, the mechanism part 7 moves the antenna 6 in parallel along the plane F1. The plane F1 is parallel to the XY plane and parallel to the surface of the object W1.

天線6藉由於多個狹縫41延伸的方向即X軸方向上平行移動，可自狹縫41持續地向被處理物W1供給自天線6產生的高頻磁場，因此可有效率地對被處理物W1進行電漿處理。另外，可對表面積大的被處理物W1進行電漿處理。The antenna 6 can continuously supply the high-frequency magnetic field generated by the antenna 6 from the slits 41 to the object W1 to be processed by moving in parallel in the direction in which the plurality of slits 41 extend, that is, the X-axis direction, so that the object to be processed can be efficiently processed. Material W1 was subjected to plasma treatment. In addition, plasma treatment can be performed on the object W1 having a large surface area.

如圖2所示，機構部7具有臂A1～臂A6、以及連結部C1～連結部C4。當自高頻電源8向天線6供給高頻電力時，電流自高頻電源8按照臂A5、連結部C2、臂A2、連結部C1、臂A1、天線6、臂A3、連結部C3、臂A4、連結部C4及臂A6的順序流動。臂A1～臂A6分別是具有導電性的構件。As shown in FIG. 2 , the mechanism part 7 has arms A1 to A6 and connecting parts C1 to C4. When the high-frequency power is supplied from the high-frequency power supply 8 to the antenna 6, the current flows from the high-frequency power supply 8 according to the arm A5, the connecting part C2, the arm A2, the connecting part C1, the arm A1, the antenna 6, the arm A3, the connecting part C3, the arm A4, connecting part C4 and arm A6 flow sequentially. Each of the arms A1 to A6 is a conductive member.

臂A1～臂A6是用以對天線6進行支持並向天線6供給高頻電力的構件。臂A1具有直線部A11及旋轉軸A12。直線部A11的一端與天線6的供電側端部61連接，直線部A11的另一端與旋轉軸A12彎曲地連接。The arms A1 to A6 are members for supporting the antenna 6 and supplying high-frequency power to the antenna 6 . The arm A1 has a linear portion A11 and a rotation axis A12. One end of the linear portion A11 is connected to the power feeding side end 61 of the antenna 6, and the other end of the linear portion A11 is curvedly connected to the rotation axis A12.

連結部C1以能夠轉動的方式將臂A1、臂A2間連結。連結部C1具有作為第一構件的第一圓板C11以及作為第二構件的第二圓板C12。第一圓板C11與旋轉軸A12一起受到固定。即，第一圓板C11固定於與連結部C1連接的臂A1的其中一個臂端。第二圓板C12與臂A2的旋轉軸A22一起受到固定。即，第二圓板C12固定於與連結部C1連接的臂A2的另一個臂端。The connection part C1 rotatably connects the arm A1 and the arm A2. The connection part C1 has a first circular plate C11 as a first member and a second circular plate C12 as a second member. The first circular plate C11 is fixed together with the rotation axis A12. That is, the first circular plate C11 is fixed to one of the arm ends of the arm A1 connected to the connecting portion C1. The second circular plate C12 is fixed together with the rotation axis A22 of the arm A2. That is, the second circular plate C12 is fixed to the other arm end of the arm A2 connected to the connection part C1.

臂A2具有直線部A21以及旋轉軸A22、旋轉軸A23。直線部A21的一端與旋轉軸A22彎曲地連接，直線部A21的另一端與旋轉軸A23彎曲地連接。Arm A2 has linear portion A21 and rotation axes A22 and A23. One end of the straight portion A21 is curvedly connected to the rotation axis A22, and the other end of the straight portion A21 is curvedly connected to the rotation axis A23.

連結部C2以能夠轉動的方式將臂A2、臂A5間連結。連結部C2具有作為第一構件的第一圓板C21以及作為第二構件的第二圓板C22。第一圓板C21與旋轉軸A23一起受到固定。即，第一圓板C21固定於與連結部C2連接的臂A2的其中一個臂端。第二圓板C22與作為旋轉軸的臂A5一起受到固定。即，第二圓板C22固定於與連結部C2連接的臂A5的另一個臂端。臂A5的其中一個臂端與高頻電源8電性連接。The connection part C2 rotatably connects the arms A2 and A5. The connection part C2 has a first circular plate C21 as a first member and a second circular plate C22 as a second member. The first circular plate C21 is fixed together with the rotation axis A23. That is, the first circular plate C21 is fixed to one of the arm ends of the arm A2 connected to the connecting portion C2. The second circular plate C22 is fixed together with the arm A5 as a rotation axis. That is, the second circular plate C22 is fixed to the other arm end of the arm A5 connected to the connection part C2. One of the arm ends of the arm A5 is electrically connected to the high-frequency power supply 8 .

臂A3的一端與天線6的接地側端部62連接。臂A3、連結部C3、臂A4及連結部C4的結構分別與臂A1、連結部C1、臂A2及連結部C2的結構相同。臂A6的其中一個臂端電性接地、即與地面連接，且臂A6的另一個臂端與連結部C4連接。One end of the arm A3 is connected to the ground-side end 62 of the antenna 6 . The structures of the arm A3, the connecting portion C3, the arm A4 and the connecting portion C4 are the same as the structures of the arm A1, the connecting portion C1, the arm A2 and the connecting portion C2 respectively. One arm end of the arm A6 is electrically grounded, that is, connected to the ground, and the other arm end of the arm A6 is connected to the connecting portion C4.

＜連結部C1的結構＞ 圖3是表示圖2所示的電漿處理裝置1所包括的機構部7的連結部C1的剖面結構的剖面圖。於連結部C1，較佳為第一圓板C11與第二圓板C12能夠相對地旋轉，並且第一圓板C11與第二圓板C12構成電容器。藉此，於藉由該電容器降低天線6所致的電抗的基礎上，藉由第一圓板C11與第二圓板C12相對地旋轉，可達成使天線6沿著磁場導入窗3平行移動的結構。以下進行具體說明。 ＜Structure of connection part C1＞ FIG. 3 is a cross-sectional view showing the cross-sectional structure of the connection portion C1 of the mechanism portion 7 included in the plasma processing apparatus 1 shown in FIG. 2 . In the connection part C1, it is preferable that the first circular plate C11 and the second circular plate C12 can relatively rotate, and the first circular plate C11 and the second circular plate C12 constitute a capacitor. Thereby, on the basis of reducing the reactance caused by the antenna 6 by the capacitor, the antenna 6 can be moved parallel along the magnetic field introduction window 3 by the relative rotation of the first circular plate C11 and the second circular plate C12. structure. The details are explained below.

如圖3所示，連結部C1具有包含樹脂的框體B1。框體B1對第一圓板C11以及第二圓板C12隔著間隙G1平行地進行保持，並且將其支持為能夠相互地旋轉，以使第一圓板C11與第二圓板C12構成平行平板電容器。藉此，第一圓板C11與第二圓板C12於連結部C1能夠相互地旋轉，並且可構成平行平板電容器。於框體B1的內部，相互空開間隔且平行地形成有凹部71、凹部72。凹部71、凹部72分別呈環狀地形成於框體B1的內部。第一圓板C11進入凹部71，且第二圓板C12進入凹部72。As shown in FIG. 3 , the connection part C1 has a frame B1 made of resin. The frame B1 holds the first circular plate C11 and the second circular plate C12 in parallel across the gap G1 and supports them so as to be rotatable with each other so that the first circular plate C11 and the second circular plate C12 form a parallel flat plate. capacitor. Thereby, the first circular plate C11 and the second circular plate C12 can rotate with each other at the connecting portion C1, and can form a parallel plate capacitor. Inside the frame B1, recessed portions 71 and 72 are formed in parallel and spaced apart from each other. The recessed portions 71 and 72 are each annularly formed inside the frame B1. The first circular plate C11 enters the recess 71 , and the second circular plate C12 enters the recess 72 .

於框體B1的兩側形成有開口部73、開口部74，旋轉軸A12進入開口部73，且旋轉軸A22進入開口部74。於開口部73與旋轉軸A12之間設置有密封構件75，於開口部74與旋轉軸A22之間設置有密封構件76。密封構件75、密封構件76用於防止框體B1的內部所填充的冷卻液洩漏至框體B1的外部，例如為O型環。Openings 73 and 74 are formed on both sides of the frame B1. The rotation axis A12 enters the opening 73, and the rotation axis A22 enters the opening 74. A sealing member 75 is provided between the opening 73 and the rotating shaft A12, and a sealing member 76 is provided between the opening 74 and the rotating shaft A22. The sealing members 75 and 76 are used to prevent the cooling liquid filled in the inside of the frame B1 from leaking to the outside of the frame B1, and are, for example, O-rings.

於天線6、臂A1～臂A6及連結部C1～連結部C4形成有供冷卻液流通的流路FL1。於連結部C1中，於旋轉軸A12、旋轉軸A22的內部形成有流路FL1。藉此，由於可抑制天線6、臂A1～臂A6及連結部C1～連結部C4的發熱，因此可降低自天線6、臂A1～臂A6及連結部C1～連結部C4對被處理物W1造成的熱影響。A flow path FL1 through which coolant flows is formed in the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4. In the connection part C1, a flow path FL1 is formed inside the rotation shaft A12 and the rotation shaft A22. Thereby, since the heat generation of the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4 can be suppressed, the impact on the object W1 to be processed from the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4 can be reduced. Thermal effects caused.

天線6、臂A1～臂A6是於內部形成有供冷卻液流通的流路FL1的中空構造的管。藉由使冷卻液於形成於旋轉軸A12、旋轉軸A22的內部的流路FL1中流通，從而向框體B1的內部填充冷卻液。作為於流路FL1中流通的冷卻液，就電絕緣的觀點而言，較佳為高電阻的水，例如較佳為純水或與其接近的水。另外，作為該冷卻液，例如亦可使用氟系惰性液體等水以外的液體製冷劑。The antenna 6 and the arms A1 to A6 are hollow-structured tubes in which a flow path FL1 for cooling fluid is formed. By causing the coolant to flow through the flow path FL1 formed inside the rotating shafts A12 and A22, the coolant is filled into the inside of the frame B1. From the viewpoint of electrical insulation, the coolant flowing through the flow path FL1 is preferably high-resistance water, for example, pure water or water close to it. In addition, as the cooling liquid, a liquid refrigerant other than water, such as a fluorine-based inert liquid, may be used.

於機構部7設置有使連結部C1的第一圓板C11與第二圓板C12相對地旋轉的馬達M1、馬達M2。具體而言，馬達M1設置於旋轉軸A12，且馬達M2設置於旋轉軸A22。馬達M1、馬達M2與電漿處理裝置1所包括的控制部10電性連接。The mechanism part 7 is provided with the motor M1 and the motor M2 which relatively rotate the 1st disk C11 and the 2nd disk C12 of the connection part C1. Specifically, the motor M1 is provided on the rotation axis A12, and the motor M2 is provided on the rotation axis A22. The motors M1 and M2 are electrically connected to the control unit 10 included in the plasma processing apparatus 1 .

藉由馬達M1進行旋轉，旋轉軸A12進行旋轉，與旋轉軸A12連接的直線部A11繞與Y軸方向平行且沿著旋轉軸A12的軸進行旋轉。藉由馬達M2進行旋轉，旋轉軸A22進行旋轉，與旋轉軸A22連接的直線部A21繞與Y軸方向平行且沿著旋轉軸A22的軸進行旋轉。When the motor M1 rotates, the rotation axis A12 rotates, and the linear portion A11 connected to the rotation axis A12 rotates around an axis parallel to the Y-axis direction and along the rotation axis A12. When the motor M2 rotates, the rotation axis A22 rotates, and the linear portion A21 connected to the rotation axis A22 rotates around an axis parallel to the Y-axis direction and along the rotation axis A22.

控制部10藉由馬達M1、馬達M2的旋轉角度對天線6的平行移動進行控制。控制部10向馬達M1、馬達M2發送控制訊號，以使天線6沿著圖1所示的平面F1平行移動。藉由利用馬達M1、馬達M2使連結部C1的第一圓板C11與第二圓板C12相對地旋轉，可藉由控制部10容易地進行基於馬達M1、馬達M2的旋轉動作的天線6的定位。連結部C2～連結部C4的剖面結構與圖3所示的連結部C1的剖面結構相同。馬達M2亦可設置於旋轉軸A23上而非設置於旋轉軸A22上。The control unit 10 controls the parallel movement of the antenna 6 through the rotation angles of the motors M1 and M2. The control unit 10 sends control signals to the motors M1 and M2 to move the antenna 6 in parallel along the plane F1 shown in FIG. 1 . By relatively rotating the first disk C11 and the second disk C12 of the connection part C1 using the motors M1 and M2, the control part 10 can easily perform the operation of the antenna 6 based on the rotation operation of the motors M1 and M2. position. The cross-sectional structure of the connection parts C2 to C4 is the same as the cross-sectional structure of the connection part C1 shown in FIG. 3 . The motor M2 may also be disposed on the rotation axis A23 instead of the rotation axis A22.

藉由以上所述，於電漿處理裝置1中，由於產生高頻磁場的天線6相對於設置於真空容器2的壁面22的磁場導入窗3而平行移動，因此可對被處理物W1均勻地進行電漿處理。另外，由於機構部7使天線6於真空容器2的外部平行移動，因此可抑制於處理室21內設置移動機構時顆粒的產生。As described above, in the plasma processing apparatus 1, the antenna 6 that generates a high-frequency magnetic field moves in parallel with respect to the magnetic field introduction window 3 provided on the wall surface 22 of the vacuum container 2, so that the object W1 to be processed can be uniformly Perform plasma treatment. In addition, since the mechanism part 7 moves the antenna 6 in parallel outside the vacuum container 2, it is possible to suppress the generation of particles when a moving mechanism is installed in the processing chamber 21.

〔實施方式2〕 以下說明本發明的實施方式2。再者，為了便於說明，對具有與實施方式1中說明的構件相同功能的構件標注相同的符號，且不重覆其說明。圖4是表示本發明的實施方式2的電漿處理裝置1A的剖面結構的剖面圖。 [Embodiment 2] Embodiment 2 of the present invention will be described below. In addition, for convenience of explanation, the same symbols are attached to the members having the same functions as those described in Embodiment 1, and the description thereof will not be repeated. FIG. 4 is a cross-sectional view showing the cross-sectional structure of a plasma processing apparatus 1A according to Embodiment 2 of the present invention.

如圖4所示，電漿處理裝置1A與實施方式1的電漿處理裝置1的不同點在於包括檢測部11。檢測部11對由天線6產生的電漿P1的發光進行檢測。具體而言，檢測部11例如是分光器，對特定波長的發光強度進行檢測。檢測部11於處理室21內設置有多個，且配置於被處理物W1與金屬板4之間。多個檢測部11於X軸方向上排列，且以與被處理物W1的表面實質上平行的方式配置。As shown in FIG. 4 , plasma processing apparatus 1A is different from plasma processing apparatus 1 according to Embodiment 1 in that it includes a detection unit 11 . The detection unit 11 detects the light emission of the plasma P1 generated by the antenna 6 . Specifically, the detection unit 11 is, for example, a spectrometer, and detects the intensity of light emission at a specific wavelength. A plurality of detection units 11 are provided in the processing chamber 21 and are arranged between the object W1 and the metal plate 4 . The plurality of detection parts 11 are arranged in the X-axis direction and are arranged substantially parallel to the surface of the object W1 to be processed.

控制部10亦與多個檢測部11連接，基於由多個檢測部11檢測出的電漿P1的發光，對藉由機構部7進行的天線6的平行移動進行控制。具體而言，控制部10基於由多個檢測部11檢測出的特定波長下的電漿P1的發光強度，對基於機構部7的天線6的移動速度進行控制。藉此，能夠一面對電漿P1的發光進行檢測一面調整天線6的位置，因此可容易地進行電漿P1的處理的調整。The control unit 10 is also connected to the plurality of detection units 11 and controls the parallel movement of the antenna 6 by the mechanism unit 7 based on the light emission of the plasma P1 detected by the plurality of detection units 11 . Specifically, the control unit 10 controls the moving speed of the antenna 6 by the mechanism unit 7 based on the luminescence intensity of the plasma P1 at a specific wavelength detected by the plurality of detection units 11 . Thereby, the position of the antenna 6 can be adjusted while detecting the light emission of the plasma P1, and therefore the processing of the plasma P1 can be easily adjusted.

〔實施方式3〕 以下說明本發明的實施方式3。再者，為了便於說明，對具有與實施方式1中說明的構件相同功能的構件標注相同的符號，且不重覆其說明。圖5是僅示出本發明的實施方式3的電漿處理裝置1B的說明上必要的構件的立體圖。再者，於圖5中，省略了真空容器2及電介質板5等的圖示。圖5的符號301及符號302表示天線6藉由機構部7A於X軸方向上移動的情形。 [Embodiment 3] Embodiment 3 of the present invention will be described below. In addition, for convenience of explanation, the same symbols are attached to the members having the same functions as those described in Embodiment 1, and the description thereof will not be repeated. FIG. 5 is a perspective view showing only components necessary for explanation of the plasma processing apparatus 1B according to Embodiment 3 of the present invention. In addition, in FIG. 5 , illustration of the vacuum container 2 , the dielectric plate 5 , etc. is omitted. Symbols 301 and 302 in FIG. 5 indicate that the antenna 6 moves in the X-axis direction by the mechanism part 7A.

如圖5所示，電漿處理裝置1B與實施方式1的電漿處理裝置1的不同點在於機構部7被變更為機構部7A。機構部7A具有連接部81、臂82～臂85、台車91、以及軌道93、軌道94。連接部81經由配線W2與高頻電源8電性連接，並且與臂82、臂84電性連接。臂82～臂85分別是具有導電性的構件。As shown in FIG. 5 , the plasma processing apparatus 1B is different from the plasma processing apparatus 1 of Embodiment 1 in that the mechanism part 7 is changed to a mechanism part 7A. The mechanism part 7A has a connection part 81, arms 82 to 85, a trolley 91, and rails 93 and 94. The connection part 81 is electrically connected to the high-frequency power supply 8 via the wiring W2, and is also electrically connected to the arms 82 and 84. Each of the arms 82 to 85 is a conductive member.

臂82的一端與連接部81電性連接，臂82的另一端與臂83的一端彎曲地連接。臂83的另一端與天線6的一端連接。臂84的一端與連接部81電性連接，臂84的另一端與臂85的一端彎曲地連接。臂85的另一端與天線6的另一端連接。One end of the arm 82 is electrically connected to the connecting portion 81 , and the other end of the arm 82 is curvedly connected to one end of the arm 83 . The other end of the arm 83 is connected to one end of the antenna 6 . One end of the arm 84 is electrically connected to the connecting portion 81 , and the other end of the arm 84 is curvedly connected to one end of the arm 85 . The other end of the arm 85 is connected to the other end of the antenna 6 .

連接部81設置於台車91上，台車91的車輪92於軌道93、軌道94上移動。軌道93、軌道94以與被處理物W1的表面實質上平行的方式配置。軌道93、軌道94於X軸方向上延伸。The connecting part 81 is provided on the trolley 91 , and the wheels 92 of the trolley 91 move on the rails 93 and 94 . The rails 93 and 94 are arranged substantially parallel to the surface of the object W1. The rails 93 and 94 extend in the X-axis direction.

藉由車輪92於軌道93、軌道94上移動，天線6沿著磁場導入窗3平行移動。於車輪92設置有未圖示的馬達，該馬達與控制部10電性連接。控制部10藉由設置於車輪92的馬達的旋轉角度對天線6的平行移動進行控制。As the wheels 92 move on the rails 93 and 94 , the antenna 6 moves parallel along the magnetic field introduction window 3 . The wheel 92 is provided with a motor (not shown), and this motor is electrically connected to the control unit 10 . The control unit 10 controls the parallel movement of the antenna 6 based on the rotation angle of the motor provided on the wheel 92 .

〔實施方式4〕 以下說明本發明的實施方式4。再者，為了便於說明，對具有與實施方式1中說明的構件相同功能的構件標注相同的符號，且不重覆其說明。圖6是表示本發明的實施方式3的電漿處理裝置所包括的機構部的連結部CN1、連結部CN2的剖面結構的剖面圖。於圖6中省略了控制部10。 [Embodiment 4] Embodiment 4 of the present invention will be described below. In addition, for convenience of explanation, the same symbols are attached to the members having the same functions as those described in Embodiment 1, and the description thereof will not be repeated. 6 is a cross-sectional view showing the cross-sectional structure of the connecting portion CN1 and the connecting portion CN2 of the mechanical portion included in the plasma processing apparatus according to Embodiment 3 of the present invention. The control unit 10 is omitted in FIG. 6 .

於實施方式3的電漿處理裝置中，與實施方式1的電漿處理裝置1相比，如圖6的符號401所示，連結部C1被變更為連結部CN1，旋轉軸A12被變更為臂構件AR1，框體B1被變更為框體B2。連結部CN1具有作為第一構件的框體B2以及作為第二構件的第二圓板C12。框體B2與臂構件AR1一起受到固定。即，框體B2固定於與連結部CN1連接的臂的其中一個臂端。亦可於臂構件AR1形成流路FL1。框體B2是具有導電性的構件。In the plasma processing apparatus of Embodiment 3, compared with the plasma processing apparatus 1 of Embodiment 1, as shown by reference numeral 401 in FIG. 6 , the connection part C1 is changed to the connection part CN1 and the rotation axis A12 is changed to an arm. Member AR1 and frame B1 are changed to frame B2. The connection part CN1 has the frame B2 as a 1st member, and the 2nd disc C12 as a 2nd member. The frame B2 is fixed together with the arm member AR1. That is, the frame B2 is fixed to one of the arm ends of the arms connected to the connection part CN1. The flow path FL1 may be formed in the arm member AR1. The frame B2 is a conductive member.

於框體B2的單側形成開口部72A，旋轉軸A22進入開口部72A。於開口部72A與旋轉軸A22之間設置有密封構件73A。密封構件73A用於防止框體B2的內部所填充的冷卻液洩漏至框體B2的外部，例如為O型環。An opening 72A is formed on one side of the frame B2, and the rotation axis A22 enters the opening 72A. A sealing member 73A is provided between the opening 72A and the rotation shaft A22. The sealing member 73A is used to prevent the cooling liquid filled in the inside of the frame B2 from leaking to the outside of the frame B2, and is, for example, an O-ring.

另外，框體B2以及第二圓板C12能夠相對地旋轉，並且框體B2與第二圓板C12構成電容器。具體而言，於框體B2的內壁71A與第二圓板C12之間構成電容器。In addition, the frame B2 and the second disc C12 are relatively rotatable, and the frame B2 and the second disc C12 constitute a capacitor. Specifically, a capacitor is formed between the inner wall 71A of the frame B2 and the second circular plate C12.

旋轉軸A22於開口部72A被密封構件73A支持為能夠旋轉。即，框體B2將第二圓板C12支持為能夠旋轉。藉此，可達成框體B2不旋轉地被固定、並且第二圓板C12能夠旋轉的結構。因此，不需要馬達M1，從而可減少旋轉所需的馬達的數量。The rotation shaft A22 is rotatably supported by the sealing member 73A in the opening 72A. That is, the frame B2 rotatably supports the second circular plate C12. Thereby, it is possible to achieve a structure in which the frame B2 is fixed without rotating and the second circular plate C12 is rotatable. Therefore, the motor M1 is not required, and the number of motors required for rotation can be reduced.

＜變形例＞ 圖6的符號402是表示圖6的符號401所示的連結部CN1的變形例的剖面結構的剖面圖。如圖6的符號402所示，與連結部CN1相比，連結部CN2可將框體B2變更為框體B3，將旋轉軸A22變更為旋轉軸AR2。 ＜Modification＞ Reference numeral 402 in FIG. 6 is a cross-sectional view showing a cross-sectional structure of a modified example of the connection portion CN1 indicated by reference numeral 401 in FIG. 6 . As shown by reference numeral 402 in FIG. 6 , compared with the connecting portion CN1 , the connecting portion CN2 can change the frame B2 to the frame B3 and change the rotation axis A22 to the rotation axis AR2.

連結部CN2具有作為第一構件的框體B3以及作為第二構件的圓板CA、圓板CB、圓板CC。框體B3與臂構件AR1一起受到固定。即，框體B3固定於與連結部CN2連接的臂的其中一個臂端。框體B3是具有導電性的構件。The connection part CN2 has the frame B3 as a 1st member, and the circular plate CA, the circular plate CB, and the circular plate CC as the 2nd member. The frame B3 is fixed together with the arm member AR1. That is, the frame B3 is fixed to one of the arm ends of the arms connected to the connection part CN2. The frame B3 is a conductive member.

於框體B3的單側形成有開口部74B，旋轉軸AR2進入開口部74B。於開口部74B與旋轉軸AR2之間設置有密封構件75B。密封構件75B用於防止框體B3的內部所填充的冷卻液洩漏至框體B3的外部，例如為O型環。An opening 74B is formed on one side of the frame B3, and the rotation axis AR2 enters the opening 74B. A sealing member 75B is provided between the opening 74B and the rotation axis AR2. The sealing member 75B is used to prevent the cooling liquid filled in the inside of the frame B3 from leaking to the outside of the frame B3, and is, for example, an O-ring.

另外，框體B3與圓板CA、圓板CB、圓板CC能夠相對地旋轉，並且框體B3與圓板CA、圓板CB、圓板CC構成電容器。圓板CA、圓板CB、圓板CC相互空開間隔且平行地設置於旋轉軸AR2。於框體B3的內部，相互空開間隔且平行地形成有凸部72B、凸部73B。凸部72B、凸部73B分別呈環狀地形成於框體B3的內部。In addition, the frame B3 and the circular plates CA, the circular plates CB, and the circular plates CC are relatively rotatable, and the frame B3 and the circular plates CA, the circular plates CB, and the circular plates CC constitute a capacitor. The circular plates CA, the circular plates CB, and the circular plates CC are spaced apart from each other and arranged in parallel to the rotation axis AR2. Inside the frame B3, convex portions 72B and 73B are formed in parallel and spaced apart from each other. The convex portion 72B and the convex portion 73B are each annularly formed inside the frame B3.

圓板CA配置於框體B3的內壁71B與凸部72B之間，且圓板CB配置於凸部72B與凸部73B之間，圓板CC配置於凸部73B的附近。藉此，於圓板CA與凸部72B之間構成電容器，於圓板CB與凸部72B、凸部73B之間構成電容器，於圓板CC與凸部73B之間構成電容器。旋轉軸AR2於開口部74B被密封構件75B支持為能夠旋轉。即，框體B3將圓板CA、圓板CB、圓板CC支持為能夠旋轉。The circular plate CA is arranged between the inner wall 71B of the frame B3 and the convex part 72B, the circular plate CB is arranged between the convex part 72B and the convex part 73B, and the circular plate CC is arranged near the convex part 73B. Thereby, a capacitor is formed between the circular plate CA and the convex portion 72B, a capacitor is formed between the circular plate CB and the convex portions 72B and 73B, and a capacitor is formed between the circular plate CC and the convex portion 73B. The rotation shaft AR2 is rotatably supported by the sealing member 75B in the opening 74B. That is, the frame B3 rotatably supports the discs CA, CB, and CC.

本發明並不限定於以上所述的各實施方式，於請求項所示的範圍內能夠進行各種變更，關於將不同實施方式中分別揭示的技術手段適當組合而得的實施方式，亦包含於本發明的技術範圍內。The present invention is not limited to each embodiment described above, and various modifications can be made within the scope indicated in the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in this disclosure. within the technical scope of the invention.

1、1A、1B:電漿處理裝置 2:真空容器 3:磁場導入窗 4:金屬板 5:電介質板 6:天線 7、7A:機構部 8:高頻電源 9:保持部 10:控制部 11:檢測部 21:處理室 22:壁面 23:開口部 41:狹縫 61:供電側端部 62:接地側端部 71、72:凹部 71A、71B:內壁 72B、73B:凸部 72A、73、74、74B:開口部 73A、75、75B、76:密封構件 81:連接部 82～85、A1～A6:臂 91:台車 92:車輪 93、94:軌道 101、102、201、202、301、302、401、402:符號 A11:直線部 A12:旋轉軸 A21:直線部 A22、A23、AR2:旋轉軸 AR1:臂構件 B1:框體 B2、B3:框體（第一構件） C1～C4、CN1、CN2:連結部 C11、C21:第一圓板（第一構件） C12、C22:第二圓板（第二構件、圓板） CA、CB、CC:圓板 F1:平面 G1:間隙 M1、M2:馬達 P1:電漿 W1:被處理物 W2:配線 X、Y、Z:軸 1, 1A, 1B: Plasma treatment device 2: Vacuum container 3: Magnetic field introduction window 4:Metal plate 5: Dielectric board 6:Antenna 7. 7A: Institutional Department 8: High frequency power supply 9:Maintenance Department 10:Control Department 11:Testing Department 21:Processing room 22:Wall 23:Opening part 41:Slit 61:Power supply side end 62: Ground side end 71, 72: concave part 71A, 71B: Inner wall 72B, 73B: convex part 72A, 73, 74, 74B: opening 73A, 75, 75B, 76: sealing components 81:Connection part 82～85, A1～A6: Arm 91: Trolley 92:wheels 93, 94: Orbit 101, 102, 201, 202, 301, 302, 401, 402: symbols A11: Straight line part A12:Rotation axis A21: Straight line part A22, A23, AR2: rotation axis AR1: Arm member B1: Frame B2, B3: frame (first component) C1～C4, CN1, CN2: connecting part C11, C21: first circular plate (first component) C12, C22: Second circular plate (second member, circular plate) CA, CB, CC: round plate F1: Plane G1: Gap M1, M2: motor P1: Plasma W1: object to be processed W2: Wiring X, Y, Z: axis

圖1是表示本發明的實施方式1的電漿處理裝置的剖面結構的剖面圖。 圖2是圖1所示的電漿處理裝置的立體圖。 圖3是表示圖2所示的電漿處理裝置所包括的機構部的連結部的剖面結構的剖面圖。 圖4是表示本發明的實施方式2的電漿處理裝置的剖面結構的剖面圖。 圖5是本發明的實施方式3的電漿處理裝置的立體圖。 圖6是表示本發明的實施方式3的電漿處理裝置所包括的機構部的連結部的剖面結構的剖面圖。 FIG. 1 is a cross-sectional view showing the cross-sectional structure of the plasma processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a perspective view of the plasma processing apparatus shown in FIG. 1 . FIG. 3 is a cross-sectional view showing the cross-sectional structure of a connecting portion of the mechanism portion included in the plasma processing apparatus shown in FIG. 2 . 4 is a cross-sectional view showing the cross-sectional structure of the plasma processing apparatus according to Embodiment 2 of the present invention. FIG. 5 is a perspective view of the plasma processing apparatus according to Embodiment 3 of the present invention. 6 is a cross-sectional view showing a cross-sectional structure of a connecting portion of a mechanism portion included in the plasma processing apparatus according to Embodiment 3 of the present invention.

1:電漿處理裝置 1: Plasma treatment device

2:真空容器 2: Vacuum container

3:磁場導入窗 3: Magnetic field introduction window

4:金屬板 4:Metal plate

5:電介質板 5: Dielectric board

6:天線 6:Antenna

7:機構部 7: Institutional Department

9:保持部 9:Maintenance Department

21:處理室 21:Processing room

22:壁面 22:Wall

23:開口部 23:Opening part

101、102:符號 101, 102: Symbols

F1:平面 F1: Plane

P1:電漿 P1: Plasma

W1:被處理物 W1: object to be processed

X、Y、Z:軸 X, Y, Z: axis

Claims (9)

一種電漿處理裝置，其特徵在於包括：真空容器，於內部收容被處理物；天線，設置於所述真空容器的外部，且產生高頻磁場；磁場導入窗，設置於所述真空容器的壁面，且為了於所述真空容器的內部產生電漿，將所述高頻磁場導入至所述真空容器的內部；以及機構部，於所述天線產生所述高頻磁場的狀態下，使所述天線沿著所述磁場導入窗平行移動，其中，所述機構部具有多個臂，用於對所述天線進行支持並且向所述天線供給高頻電力。 A plasma processing device, characterized by comprising: a vacuum container that accommodates an object to be processed inside; an antenna that is disposed outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window that is disposed on the wall of the vacuum container. , and in order to generate plasma inside the vacuum container, introduce the high-frequency magnetic field into the inside of the vacuum container; and a mechanism part that causes the antenna to generate the high-frequency magnetic field in a state where the high-frequency magnetic field is generated by the antenna. The antenna moves in parallel along the magnetic field introduction window, wherein the mechanism part has a plurality of arms for supporting the antenna and supplying high-frequency power to the antenna. 如請求項1所述的電漿處理裝置，其中，所述磁場導入窗具有將所述真空容器的內部與外部進行隔離的電介質板。 The plasma processing apparatus according to claim 1, wherein the magnetic field introduction window has a dielectric plate that isolates the inside of the vacuum container from the outside. 如請求項2所述的電漿處理裝置，其中，所述磁場導入窗更具有與所述電介質板相接地設置的、形成有多個狹縫的金屬板，所述多個狹縫分別於第一方向上延伸，並且所述多個狹縫以沿著與所述第一方向正交的第二方向排列的方式配置，所述天線是以於所述第二方向上延伸的方式配置的直線狀的天線，所述機構部使所述天線於所述第一方向上平行移動。 The plasma processing device according to claim 2, wherein the magnetic field introduction window further has a metal plate grounded with the dielectric plate and formed with a plurality of slits, and the plurality of slits are respectively located at Extending in a first direction, and the plurality of slits are arranged in a manner arranged along a second direction orthogonal to the first direction, and the antenna is arranged in a manner extending in the second direction. A linear antenna, the mechanism part moves the antenna in parallel in the first direction. 如請求項1至請求項3中任一項所述的電漿處理裝 置，其中，所述機構部更具有：連結部，以能夠轉動的方式將所述臂間連結，所述連結部具有：第一構件，固定於與所述連結部連接的其中一個臂端；以及第二構件，固定於與所述連結部連接的另一個臂端；所述第一構件與所述第二構件能夠相對地旋轉，並且所述第一構件與所述第二構件構成電容器。 The plasma treatment device as described in any one of claims 1 to 3 Wherein, the mechanism part further has: a connecting part to rotatably connect the arms, and the connecting part has: a first member fixed to one of the arm ends connected to the connecting part; and a second member fixed to the other arm end connected to the connecting portion; the first member and the second member are relatively rotatable, and the first member and the second member constitute a capacitor. 如請求項4所述的電漿處理裝置，其中，於所述機構部設置馬達，所述馬達使所述連結部的所述第一構件與所述第二構件相對地旋轉，所述電漿處理裝置更包括控制部，所述控制部藉由所述馬達的旋轉角度對所述天線的平行移動進行控制。 The plasma processing apparatus according to claim 4, wherein the mechanism portion is provided with a motor that relatively rotates the first member and the second member of the connecting portion, and the plasma processing device The processing device further includes a control unit that controls the parallel movement of the antenna through the rotation angle of the motor. 如請求項4所述的電漿處理裝置，其中，所述連結部具有框體，所述框體對第一圓板以及第二圓板隔著間隙平行地進行保持，並且將其支持為能夠相互地旋轉，以使作為所述第一構件的所述第一圓板與作為所述第二構件的所述第二圓板構成平行平板電容器。 The plasma processing apparatus according to claim 4, wherein the connecting portion has a frame that holds the first circular plate and the second circular plate in parallel with a gap therebetween and supports them so as to be able to Rotate each other so that the first disc as the first member and the second disc as the second member form a parallel plate capacitor. 如請求項4所述的電漿處理裝置，其中，作為所述第一構件的框體將作為所述第二構件的圓板支持為能夠旋轉。 The plasma processing apparatus according to claim 4, wherein the frame as the first member rotatably supports the disk as the second member. 如請求項4所述的電漿處理裝置，其中，於所述天線、所述臂及所述連結部形成有供冷卻液流通的流路。 The plasma processing apparatus according to claim 4, wherein a flow path for cooling fluid to circulate is formed in the antenna, the arm, and the connecting portion. 如請求項1至請求項3中任一項所述的電漿處理裝 置，更包括：檢測部，對自所述天線產生的電漿的發光進行檢測；以及控制部，基於由所述檢測部檢測出的電漿的發光，對藉由所述機構部進行的所述天線的平行移動進行控制。 The plasma treatment device as described in any one of claims 1 to 3 The device further includes: a detection unit that detects luminescence of plasma generated from the antenna; and a control unit that controls all operations performed by the mechanism unit based on the luminescence of plasma detected by the detection unit. The parallel movement of the antenna is controlled.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622698A (en) * 2007-03-08 2010-01-06 东京毅力科创株式会社 Plasma processing apparatus, plasma processing method, and storage medium
TW201145345A (en) * 2010-02-19 2011-12-16 Ulvac Inc Plasma processing device and plasma processing method
US20150129133A1 (en) * 2013-11-12 2015-05-14 Allied Techfinders Co., Ltd. Plasma device
TW202046372A (en) * 2019-06-05 2020-12-16 日商日新電機股份有限公司 Plasma processing apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055600A (en) * 2002-07-16 2004-02-19 Tokyo Electron Ltd Plasma processing apparatus
JP6337354B2 (en) * 2015-01-20 2018-06-06 パナソニックＩｐマネジメント株式会社 Fine particle production apparatus and fine particle production method
JP7238613B2 (en) * 2019-06-05 2023-03-14 日新電機株式会社 Plasma processing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622698A (en) * 2007-03-08 2010-01-06 东京毅力科创株式会社 Plasma processing apparatus, plasma processing method, and storage medium
TW201145345A (en) * 2010-02-19 2011-12-16 Ulvac Inc Plasma processing device and plasma processing method
US20150129133A1 (en) * 2013-11-12 2015-05-14 Allied Techfinders Co., Ltd. Plasma device
TW202046372A (en) * 2019-06-05 2020-12-16 日商日新電機股份有限公司 Plasma processing apparatus

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