201145345 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於感應耦合型之電漿處理裝置以及電 漿處理方法。 【先前技術】 從先前技術起，在半導體裝置之製造工程中，使用電 漿來進行各種處理一事，係爲週知。在進行此種處理之電 漿處理裝置中，爲了處理速度之提升等，係對於電漿之高 密度化有所謀求。作爲能夠產生高密度電漿的電漿處理裝 置之例，係週知有ICP (感應耦合電漿）型之電漿處理裝 置（例如，參考專利文獻1 )。 在上述專利文獻1所記載之裝置中，係沿著藉由介電 質材料所構成之真空腔的上壁，而將直徑相異之2根的天 線線圈作了同心配置。而後，若是將特定之氣體導入至真 空腔內，並且從高頻電源來透過匹配箱而對於兩天線線圈 投入高頻電力，則係產生在真空腔內所形成之磁場的時間 變化，藉由此，係感應有電場，藉由此電場，電子係被加 速，經由此，而在真空腔內產生高密度之電漿。 在上述種類之電漿處理裝置中，若是導入至真空腔內 之氣體的種類等之處理條件或者是真空腔之使用狀態有所 相異，則就算是對於兩天線線圈投入同等之高頻電力，該 時刻之電場強度分布亦會在真空腔內變化，起因於此，電 漿密度分布會變化。於此種情況時，若是藉由上述電漿處 201145345 理裝置來進行蝕刻或成膜等之特定的處理，則會有在應處 理之基板面內而使蝕刻速度或成膜速度成爲不均一的問題 〇 爲了解決此種問題，在上述專利文獻1所記載之裝置 中，係提案有：藉由對於投入至兩天線線圈處之高頻電力 的相對性之分配比例作變更，來使真空腔內之電場強度分 布變化，並改善電漿密度分布。 另外，在對於天線線圈而投入高頻電力時，係設爲藉 由匹配箱來使電漿負載之阻抗和高頻電源之阻抗相互整合 ，並相對於電漿負載來安定地將高頻電力投入。但是，若 是如同上述專利文獻1所記載一般，而對於投入至兩天線 線圏處之高頻電力的相對性之分配比例作變更，則在匹配 箱處之阻抗的整合點係可能會在廣範圍內而變化。若是如 此這般地而使整合點在廣範圍內變化，則係必須要將匹配 箱之整合範圍增廣，而有著使匹配箱之控制變得複雜或者 是由於解析度之降低而造成高頻電力之投入變得不安定之 問題。進而，亦有著會成爲需要可變電容等之零件而使得 高頻電源之電路構成變得複雜的問題。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2008-2708 1 5號公報 【發明內容】 〔發明所欲解決之課題〕 -6 - 201145345 本發明，係有鑑於上述之點，而以提供一種不需變更 高頻電源以及匹配箱之構成便能夠使真空腔內之電漿密度 分布改變的電漿處理裝置以及電漿處理方法一事，作爲課 題。 〔用以解決課題之手段〕 爲了解決上述課題，本發明，係爲一種電漿處理裝置 ，係具備有：真空腔、和在此真空腔之藉由介電質材料所 形成的特定之壁面的外側處而沿著此壁面來作了同心配置 的複數之天線線圈、和透過匹配箱而被與各天線線圈作連 接之高頻電源，將特定之氣體導入至真空腔內，並從高頻 電源來透過匹配箱而對於各天線線圏供給高頻電力，以在 真空腔內而產生感應耦合型之電漿，該電漿處理裝置，其 特徵爲：係具備有將複數之天線線圈在與前述壁面相正交 之方向上而作相對移動之移動手段》 若依據本發明，則由於係具備有使複數之天線線圈在 與真空腔之壁面相正交的方向上作相對移動之移動手段， 因此，若是使複數之天線線圈在與壁面相正交之方向上作 相對移動，則係能夠在真空腔內所產生之電場強度以及磁 場強度的分布係局部性地作變化，並使真空腔內之電漿密 度分布局部性地作變化。 如此這般，在本發明中，在爲了使於真空腔內所產生 之電場強度以及磁場強度的分布作變化時，由於係並不需 要對於高頻電源或匹配相之構成或者是所投入之高頻電力 201145345 施加變更，而是設爲使天線線圈作相對移動之構成，因此 ，不會有阻抗之整合點在廣範圍內而作變化的情況，而能 夠安定地將高頻電力投入。進而，亦不會有高頻電源之電 路構成變得複雜的情況。而，若是將本發明是用在乾蝕刻 裝置或者是成膜裝置中，則只要因應於處理條件或使用狀 況等來對於電漿密度分布作適當的變更，便能夠得到蝕刻 速度或成膜速度之在基板面內的所期望之分布。 另外，在本發明之複數的天線線圈之構成中，不僅是 設爲將直徑相異者作了同心配置之構成的情況，而亦包含 有當將同一形狀或者是形狀相異者沿著壁面作了配置時而 以使複數之同心圓以波紋狀來作了擴散的方式所構成之情 況等。 又，當以使複數之同心圓以波紋狀來擴散的方式而將 複數之天線線圈作了配置的情況時，較理想，前述移動手 段，係採用能夠將各天線線圈之一部份作局部性的相對移 動之構成。藉由此，係能夠使在真空腔內所產生之電場強 度以及磁場強度的分布作局部性的變化，並使電漿密度變 化。 又，爲了解決上述課題，本發明，係爲一種電漿處理 裝置，係具備有：真空腔、和在此真空腔之藉由介電質材 料所形成的特定之壁面的外側處而沿著此壁面來作了同心 配置的漩渦狀之天線線圈、和透過匹配箱而被與此天線線 圈作連接之高頻電源，將特定之氣體導入至真空腔內，並 從高頻電源來透過匹配箱而對於天線線圈供給高頻電力， -8- 201145345 以在真空腔內而產生感應耦合型之電漿，該電漿處理裝置 ，其特徵爲··係具備有使天線線圈和通過天線線圈之中心 而在徑方向上作延伸的直線相交之複數場所中的從中心起 而相距等距離之2個場所，在與前述壁面相正交之方向上 而作相對移動之移動手段。 另外，在本發明中，所謂從中心起而相距等距離’係 並非指從中心起而相距之距離爲嚴密性地一致，而是指從 中心起所相距之距離爲實質性相等。又，所謂漩渦狀之天 線線圈，係並不被限定於將1根的天線線圈以漩渦狀來作 了捲繞者，而亦可爲將2根以上作了連接所構成者。 又，爲了解決上述課題，本發明，係爲一種電漿處理 方法，係爲使用如申請專利範圍第1〜3項中之任一項所記 載之電漿處理裝置，而將特定之氣體導入至真空腔內，並 且從高頻電源來透過匹配箱而對於各天線線圈供給高頻電 力，來在真空腔內使感應耦合型之電漿產生，並使用此電 漿來在真空腔內對於處理基板而施加電漿處理，該電漿處 理方法，其特徵爲：在對於處理基板進行電漿處理時，係 使天線線圈全體性地或者是部分性地在與特定之壁面相正 交的方向上作相對移動。 【實施方式】 以下，參考圖面，針對將本發明適用在ICP型之乾蝕 刻裝置中的實施型態作說明。 參考圖1，乾蝕刻裝置，係具備有可形成真空氛圍之 -9- 201145345 圓筒形狀的真空腔1。真空腔1之上壁10，係藉由石英或陶 瓷等之介電質材料所形成。在上壁1 0之上側，係沿著此上 壁1 〇而同心狀地配置有直徑相異之2根的C形之天線線圈2 a 、2b。作爲天線線圈2a、2b，係使用有導電率爲高之金屬 製的板材或者是中空圓筒形狀者。在各天線線圈2a、2b之 其中一端處，係透過匹配箱3而被連接有第1高頻電源4， 各天線線圈2a、2b之另外一端，係被接地。在真空腔1之 相互對向的側壁處，係分別被連接有氣體導入管5。兩氣 體導入管5，係經由省略圖示之質量流控制器而與氣體源 相通連。 在真空腔1之底部中央處，係被設置有將被進行電漿 處理之基板S作保持的基板平台6。又，在基板平台6之上 面，係被設置有基板電極，並透過阻隔電容器7而被與第2 高頻電源8作連接。而，在電漿處理中，係成爲能夠對於 基板S來施加特定之偏壓電位。另外，圖1中，9係爲被與 省略圖示之渦輪分子幫浦、旋轉幫浦以及可變電導閥等所 成之真空排氣手段作了連接的排氣管。 接著，若是對於使用有上述蝕刻裝置之基板的蝕刻方 法作說明，則首先，係將基板S保持在基板平台6上。在此 狀態下而將真空腔1作真空抽氣，之後，將因應於應在真 空腔1內所處理之基板而適當選擇了的特定之氣體（蝕刻 氣體）透過氣體導入管5來作導入》而後，係從第1高頻電 源4來透過匹配箱3而對於各天線線圈2a、2b供給特定之高 頻電力。與此同時地，對於基板而透過第2高頻電源8來施 -10- 201145345 加偏壓電壓。藉由此，因應於在兩天線線圈2a、 動的電流之方向或電流値，在真空腔1內係被形 以及電場，在真空腔1內係被形成有感應耦合型 而後，在電漿中所電離了的氣體離子，係藉由偏 被朝向基板S拉入，藉由此，基板S係被蝕刻。 於此，若是製程氣體之種類、蝕刻時之真？ 壓力（依據排氣速度或者是製程氣體導入量等） 條件、或者是對於真空腔1之內壁面的反應副生 著等的真空腔1之使用狀態有所改變，則在真空目 生之磁場強度以及電場強度的分布係會變化，起 電漿密度分布係會變化。於此種情況時，蝕刻速 板面內而有所變化。 在本實施形態中，係設爲下述之構成：亦即 置有用以使位置在內側之天線線圈（以下，稱作 線線圈」）2a和位置在外側之天線線圏（以下， 側天線線圈」）2b於與上壁10相正交之方向（0 下方向）而作相對移動之移動手段Μ。以下，針 段Μ之構成作詳述。 移動手段Μ，係如圖1以及圖2中所示一般， 線圈2a、2b作保持之保持部21a、21b，和與保ί 21b之上面作了連結的驅動軸22a、22bg，以及使 22 a、22b朝上移動或者是朝下移動之驅動部23a 構成之。於此情況，將內側天線線圈2a作保持 21a，係藉由特定長度之板材所構成，其之兩端 2 b處所流 成有磁場 之電漿。 壓電位而 g腔1內的 等之製程 成物之附 空1內所產 因於此， 度會在基 是，係設 「內側天 稱作「外 β 1中之上 對移動手 由將天線 寺部21a、 此驅動軸 、23b ，而 之保持部 ，係在內 -11 - 201145345 側天線線圈2a之直徑方向的2個場所處被作了螺桿鎖合。 又，將外側天線線圈2b作保持之保持部21b，係藉由板片 所構成，板片21b，係在外側天線線圈2b之周方向上，存 在有特定間隔地而被設置在2個場所處。又，驅動部23a、 23b，係分別藉由多段式空氣汽缸或者是步進馬達而構成 之。 在進行蝕刻處理時（例如，先於蝕刻處理之前），係 藉由其中一者之驅動部23a、23b來使驅動軸22a、22b朝上 移動或者是朝下移動，並使內側天線線圈2a以及外側天線 線圈2b在上下方向上作相對移動，而使上壁1 0和內側天線 線圈2a之間隔G1以及上壁10和外側天線線圈2b之間隔G2相 互地變化。藉由此，在真空腔1內所產生之磁場強度以及 電場強度係局部性地變化，若是如同上述一般而在真空腔 1內使電漿產生，則真空腔1內之電漿密度分布係改變。藉 由此，係能夠將蝕刻速度之基板面內的均一性提升。另外 ，使其作相對移動之量，係只要預先藉由實驗來取得即可 〇 接著，爲了對於本發明之效果作確認，係使用上述乾 蝕刻裝置而進行了以下之實驗。 首先，作爲應蝕刻之基板S，而使用φ 3 00mm之矽晶 圓，並作爲蝕刻氣體而使用了氯氣。之後，作爲蝕刻條件 ，將氯氣流量設爲lOOsccm，將蝕刻時之動作壓力設爲 〇.5Pa，將投入至內側天線線圈2a以及外側天線線圈2b之 雙方處的高頻電力（頻率13.56MHz )設爲3 00W，並將投 -12- 201145345201145345 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an inductive coupling type plasma processing apparatus and a plasma processing method. [Prior Art] From the prior art, it has been known to use plasma to perform various processes in the manufacturing process of a semiconductor device. In the plasma processing apparatus which performs such a treatment, in order to improve the processing speed and the like, it is desired to increase the density of the plasma. As an example of a plasma processing apparatus capable of producing a high-density plasma, an ICP (Inductively Coupled Plasma) type plasma processing apparatus is known (for example, refer to Patent Document 1). In the apparatus described in the above Patent Document 1, two antenna coils having different diameters are concentrically arranged along the upper wall of the vacuum chamber formed of a dielectric material. Then, if a specific gas is introduced into the vacuum chamber and high frequency power is supplied from the high frequency power source through the matching box, high frequency power is applied to the two antenna coils, thereby generating a time variation of the magnetic field formed in the vacuum chamber. The electric field is induced by the electric field, and the electron system is accelerated, thereby generating a high-density plasma in the vacuum chamber. In the plasma processing apparatus of the above type, if the processing conditions such as the type of the gas introduced into the vacuum chamber or the use state of the vacuum chamber are different, even if the same high-frequency power is applied to the two antenna coils, The electric field intensity distribution at this moment also changes within the vacuum chamber, and as a result, the plasma density distribution changes. In this case, if the specific processing such as etching or film formation is performed by the plasma chamber 201145345, the etching rate or the film forming speed may be uneven in the surface of the substrate to be processed. In order to solve such a problem, in the device described in Patent Document 1, it is proposed to change the ratio of the relative power of the high-frequency power input to the two antenna coils in the vacuum chamber. The electric field intensity distribution changes and the plasma density distribution is improved. In addition, when high-frequency power is applied to the antenna coil, it is assumed that the impedance of the plasma load and the impedance of the high-frequency power source are integrated with each other by the matching box, and the high-frequency power is stably input with respect to the plasma load. . However, if the ratio of the relative distribution of the high-frequency power input to the two antenna turns is changed as described in the above Patent Document 1, the integration point of the impedance at the matching box may be in a wide range. Change internally. If the integration point is changed in a wide range, the integration range of the matching box must be widened, and the control of the matching box may be complicated or the high frequency power may be caused by the decrease of the resolution. The investment has become unstable. Further, there is a problem that a circuit such as a variable capacitor is required, and the circuit configuration of the high-frequency power source is complicated. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] JP-A-2008-2708 1 5 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] -6 - 201145345 The present invention has been made in view of the above points. Further, it is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of changing the plasma density distribution in a vacuum chamber without changing the configuration of the high-frequency power source and the matching box. [Means for Solving the Problems] In order to solve the above problems, the present invention is a plasma processing apparatus including a vacuum chamber and a specific wall surface formed by a dielectric material in the vacuum chamber. a plurality of antenna coils arranged concentrically along the wall surface, and a high-frequency power source connected to each antenna coil through a matching box, introducing a specific gas into the vacuum chamber, and from the high-frequency power source A high-frequency power is supplied to each antenna coil through a matching box to generate an inductively coupled plasma in a vacuum chamber, and the plasma processing apparatus is characterized in that a plurality of antenna coils are provided in the foregoing According to the present invention, there is a moving means for relatively moving the plurality of antenna coils in a direction orthogonal to the wall surface of the vacuum chamber, so that the moving means for moving relative to each other in the direction perpendicular to the wall surface is If the plurality of antenna coils are relatively moved in a direction orthogonal to the wall surface, the electric field strength and the magnetic field strength which can be generated in the vacuum chamber are divided. Based changes made locally, and a vacuum chamber of a plasma density distribution for the changes locally. In this way, in the present invention, in order to change the distribution of the electric field strength and the magnetic field strength generated in the vacuum chamber, since the configuration of the high-frequency power source or the matching phase is not required or the input is high. Since the frequency power 201145345 is changed, the antenna coil is configured to move relative to each other. Therefore, the integration point of the impedance does not change over a wide range, and the high-frequency power can be stably input. Further, there is no case where the circuit configuration of the high-frequency power source is complicated. On the other hand, if the present invention is used in a dry etching apparatus or a film forming apparatus, an etching rate or a film forming speed can be obtained by appropriately changing the plasma density distribution in accordance with processing conditions, use conditions, and the like. The desired distribution within the plane of the substrate. Further, in the configuration of the plurality of antenna coils of the present invention, not only the case where the diameters are differently arranged is concentrically arranged, but also the case where the same shape or the shape is different is made along the wall surface. In the case of arranging, the concentric circles of the plural are formed in a corrugated manner. Further, when a plurality of antenna coils are arranged such that a plurality of concentric circles are diffused in a corrugated manner, it is preferable that the moving means adopts a part of each antenna coil. The composition of the relative movement. Thereby, the distribution of the electric field intensity and the magnetic field strength generated in the vacuum chamber can be locally changed, and the plasma density can be changed. Moreover, in order to solve the above problems, the present invention is a plasma processing apparatus including a vacuum chamber and an outer side of a specific wall surface formed by a dielectric material in the vacuum chamber. The wall surface is formed by a concentrically arranged spiral antenna coil and a high-frequency power source connected to the antenna coil through a matching box, and a specific gas is introduced into the vacuum chamber and passed through the matching box from the high-frequency power source. The antenna coil is supplied with high-frequency power, -8-201145345 to generate an inductively coupled plasma in a vacuum chamber, and the plasma processing apparatus is characterized in that the antenna coil is provided with a center of the antenna coil and the antenna coil. In the plurality of places where the straight lines intersecting in the radial direction intersect, the two places which are equidistant from the center are moved in a direction orthogonal to the wall surface. Further, in the present invention, the term "equal distance from the center" does not mean that the distance from the center is strictly coincident, but the distance from the center is substantially equal. In addition, the spiral coil antenna is not limited to one in which one antenna coil is wound in a spiral shape, and two or more antennas may be connected. In order to solve the above problems, the present invention provides a plasma processing method using a plasma processing apparatus according to any one of claims 1 to 3, wherein a specific gas is introduced into the plasma processing apparatus. Inductively coupled plasma is generated in a vacuum chamber by supplying high frequency power to each antenna coil through a matching box from a high frequency power source, and using the plasma to process the substrate in the vacuum chamber And applying a plasma treatment method, the plasma processing method is characterized in that, when the plasma processing is performed on the processing substrate, the antenna coil is made wholly or partially in a direction orthogonal to the specific wall surface. Relative movement. [Embodiment] Hereinafter, an embodiment in which the present invention is applied to an ICP type dry etching apparatus will be described with reference to the drawings. Referring to Fig. 1, a dry etching apparatus is provided with a vacuum chamber 1 having a cylindrical shape of -9-201145345 which can form a vacuum atmosphere. The upper wall 10 of the vacuum chamber 1 is formed of a dielectric material such as quartz or ceramic. On the upper side of the upper wall 10, two C-shaped antenna coils 2a, 2b having different diameters are arranged concentrically along the upper wall 1''. As the antenna coils 2a and 2b, a metal plate material having a high electrical conductivity or a hollow cylindrical shape is used. At one of the antenna coils 2a and 2b, the first high-frequency power source 4 is connected to the matching box 3, and the other end of each of the antenna coils 2a and 2b is grounded. At the mutually opposite side walls of the vacuum chamber 1, gas introduction pipes 5 are respectively connected. The two gas introduction pipes 5 are connected to a gas source via a mass flow controller (not shown). At the center of the bottom of the vacuum chamber 1, a substrate platform 6 for holding the substrate S subjected to plasma treatment is provided. Further, a substrate electrode is provided on the upper surface of the substrate stage 6, and is connected to the second high-frequency power source 8 through the blocking capacitor 7. Further, in the plasma processing, it is possible to apply a specific bias potential to the substrate S. Further, in Fig. 1, reference numeral 9 denotes an exhaust pipe which is connected to a vacuum exhausting means such as a turbo molecular pump, a rotary pump, and a variable conductance valve (not shown). Next, in the case of an etching method using a substrate having the above etching apparatus, first, the substrate S is held on the substrate stage 6. In this state, the vacuum chamber 1 is evacuated, and then a specific gas (etching gas) appropriately selected in accordance with the substrate to be processed in the vacuum chamber 1 is introduced through the gas introduction pipe 5 for introduction. Then, the specific high-frequency power is supplied to the antenna coils 2a and 2b through the matching box 3 from the first high-frequency power source 4. At the same time, a bias voltage is applied to the substrate through the second high-frequency power source 8 by applying a bias voltage of -10 201145345. Thereby, in response to the direction of the current flowing in the two antenna coils 2a or the current 値, the shape and the electric field are formed in the vacuum chamber 1, and an inductive coupling type is formed in the vacuum chamber 1, and then in the plasma. The ionized gas ions are pulled toward the substrate S by the bias, whereby the substrate S is etched. Here, if it is the type of process gas and the true time of etching? The pressure (depending on the exhaust speed or the amount of the process gas introduced) or the use of the vacuum chamber 1 for the reaction of the inner wall surface of the vacuum chamber 1 or the like, the magnetic field strength in the vacuum And the distribution of the electric field strength will change, and the plasma density distribution will change. In this case, the speed of the slab is changed in the plane. In the present embodiment, an antenna coil (hereinafter referred to as a coil) 2a having a position inside and an antenna coil positioned at the outside (hereinafter, a side antenna coil) are provided. ”2b is a moving means for relative movement in the direction orthogonal to the upper wall 10 (zero direction). Hereinafter, the configuration of the needle segment will be described in detail. The moving means Μ, as shown in Figs. 1 and 2, the coils 2a, 2b are held by the holding portions 21a, 21b, and the drive shafts 22a, 22bg connected to the upper surface of the guaranty 21b, and 22 a The drive unit 23a that moves 22b upward or moves downward. In this case, the inner antenna coil 2a is held 21a by a plate of a specific length, and a magnetic field of a magnetic field is formed at both ends 2b. The piezoelectric position and the process in the g-cavity 1 are produced in the empty space 1 of the process, and the degree will be at the base, and the inner side is called "the outer β1 is above the moving hand." The antenna temple portion 21a, the drive shaft, and the holding portion are screw-locked at two places in the diameter direction of the antenna coil 2a on the side of the inner-11 - 201145345. Further, the outer antenna coil 2b is used. The holding portion 21b is formed by a plate piece, and the plate piece 21b is provided at two places at a predetermined interval in the circumferential direction of the outer antenna coil 2b. Further, the driving portions 23a, 23b Each of them is constituted by a multi-stage air cylinder or a stepping motor. When the etching process is performed (for example, before the etching process), the drive shaft 22a is driven by one of the driving portions 23a, 23b. 22b moves upward or downward, and moves the inner antenna coil 2a and the outer antenna coil 2b in the up and down direction, and the gap between the upper wall 10 and the inner antenna coil 2a G1 and the upper wall 10 and the outer side. The interval G2 of the antenna coils 2b varies from each other. Thereby, the magnetic field strength and the electric field intensity generated in the vacuum chamber 1 are locally changed. If the plasma is generated in the vacuum chamber 1 as described above, the plasma density distribution in the vacuum chamber 1 is changed. Thereby, the uniformity in the surface of the substrate at the etching rate can be improved. Further, the amount of relative movement can be obtained by an experiment in advance, and in order to confirm the effect of the present invention, The following experiment was carried out using the dry etching apparatus described above. First, a φ 300 mm ruthenium wafer was used as the substrate S to be etched, and chlorine gas was used as an etching gas. Thereafter, chlorine gas flow rate was used as an etching condition. In the case of 100 sqcm, the operating pressure at the time of etching is set to 〇5 Pa, and the high-frequency power (frequency 13.56 MHz) input to both the inner antenna coil 2a and the outer antenna coil 2b is set to 300 W, and - 201145345
入至基板電極6處之偏壓電力（頻率12.5MHz)設爲800W 〇 在實驗開始時，使2個的天線線圈2a、2 b與上壁10相 抵接，並將上壁10和天線線圈2a、2b之間隔Gl、G2的雙方 設爲〇，而以上述之條件來作了蝕刻（比較例）。又，在 使外側天線線圈2b與上壁10作了抵接的狀態下，藉由移動 手段Μ來使內側天線線圈2 a朝上移動，並分別將間隔G 1變 更爲8mm (發明1 ) 、16mm (發明2 ) 、24mm (發明3 )， 來對於其他之矽晶圓而以相同之蝕刻條件來作了蝕刻。 圖3，係爲將對於藉由上述條件而作了蝕刻時之蝕刻 速度的分布作了測定之結果作展示者。蝕刻速度之測定點 ，係設爲在通過矽晶圓之中心的線上之5點（將圖1中之左 方向作爲一方向，而設爲-145mm、-75mm、0mm (基板中 心）、75mm、14 5mm )。 若依據上述實驗，則可以得知，在比較例中，在基板 中心處之蝕刻速度係局部性地變高，其結果，在基板面內 之蝕刻速度係成爲不均一》相對於此，如同發明1〜發明3 一般，可以得知，若是使內側天線線圈2a朝上移動並使間 隔G1改變，則蝕刻速度係相對於比較例之結果而有所改變 。而，在發明1中，可以得知，在基板面內之蝕刻速度的 均一性係顯著的提升。 另外，雖然並未特別展示有實驗例並作說明，但是， 亦得知了，若是蝕刻條件或真空腔之使用狀態有所改變， 則真空腔1內所產生之磁場強度以及電場強度之分布係會 -13- 201145345 有所變化。在此種情況時，例如，當在使用同一之蝕刻裝 置並對氣體之種類作改變而對於基板進行蝕刻一般的情況 時，係只要對於蝕刻氣體之每一種類，而分別因應於蝕刻 條件來預先求取出能夠得到所期望之蝕刻速度的均一性之 間隔G 1、G2，並以成爲所求取出之間隔G 1、G2的方式來 使內側天線線圈2a以及外側天線線圈2b作相對移動即可。 又，亦可構成爲因應於真空腔1之使用狀態來自動性地使 內側天線線圈2a以及外側天線線圈2b作相對移動。 以上，雖係針對將本發明適用在蝕刻裝置中之實施形 態而作了說明，但是，本發明，係並不被限定於上述形態 。本發明，係亦可適用在藉由濺鍍法或者是電漿CVD法來 成膜一般的情況中。 又，在上述實施形態中，係以沿著上壁10來配置直徑 相異之C形的內側天線線圈2a以及外側天線線圈2b，並藉 由使內側天線線圈2a或者是外側天線線圈2b分別一體性（ 全體性）地朝上移動或者是朝下移動來使其作相對移動者 爲例’而作了說明，但是，係並不被限定於此。 作爲變形例之天線線圈，亦可如圖4中所示一般，使 用在將相同形狀之3根的天線線圈12a、12b、12c沿著上壁 而作了組合配置時，使其成爲直徑相異之2個的同心圓以 波紋狀而作了擴散一般的形狀者。作爲將各天線線圏12a ' 12b、12c作保持之保持部21c，係使用有由圓板狀之基 $211和以從此基部之外周端起來朝向徑方向外側而延伸 的方式來設置了的支持片212所構成者，支持片212之前端 •14- 201145345 ，係在構成天線線圈12a、12b、12c之內周圓的部分處， 而分別被作了螺桿鎖合。於此情況，構成天線線圈1 2a、 12b、12c之外周圓的部分，係使用固定構件24而固定在真 空腔1之上壁10處。藉由此，若是藉由驅動部23c來使驅動 軸22c朝上移動或朝下移動，則構成天線線圈12a、12b、 12c之內周圓的部分，係成爲一體性地移動。 又，作爲其他變形例之天線線圈，係可如圖5中所示 —般，使用將1根的天線線圈捲繞成漩渦狀而構成者。於 此種情況時，係在天線線圏20和通過天線線圈20之中心〇 而在徑方向上延伸之直線L，其兩者間所交叉的場所中， 於相距中心〇而成爲等間隔的位置PI、P2處，將特定長度 之保持部21的兩端部預先作螺桿鎖合。而後，將藉由驅動 部23而朝上移動或朝下移動之驅動軸22，與保持部21作連 結。藉由此，經由使被捲繞成漩渦狀之天線線圈20的一部 份相對於其他部分來朝上移動或朝下移動，係能夠使在真 空腔1內所產生之磁場強度以及電場強度作局部性的變化 。另外，係能夠使用2根的天線線圈，來設爲沿著真空腔1 之上壁10而將天線線圈配置爲游渦狀’於此種情況時，係 只要在內側部分與外側部分間之連結場所處設置移動手段 ，並構成爲能夠使內側部分和外側部分作相對移動即可。 進而，在上述實施形態中，雖係以爲了使外側天線線 圏2b朝上移動或朝下移動而設置了 2個的移動手段Μ者爲例 來作了說明’但是，移動手段之數量，係因應於天線線圈 之種類或直徑而適宜作變更。又，亦可藉由追隨手段來構 -15- 201145345 成移動手段之其中一方。作爲追隨手段30，係如圖6中所 示一般，只要以藉由將外側天線線圈2b之自身重量作抵消 的力來將天線線圈2b朝向上方向作推壓的由板彈簧或者是 線圈彈簧等所成的彈性手段31來構成之即可。於此情況， 係在被固定於鈾刻裝置之特定位置34處的支持構件33處， 而將外側天線線圈2b之一部份，透過彈性手段31和支持構 件3 2來預先作吊設。而後，例如，當藉由移動手段來使外 側天線線圈2b之相對向的部分朝上移動時，若是外側天線 線圏2b由於自身重量而傾斜，則藉由將此自身重量作抵消 之力，外側天線線圈2b係被作推壓，而外側天線線圈2b係 被保持爲略水平。若依據此，則能夠將使天線線圈作相對 移動之驅動部減少，而能夠謀求低成本化。 【圖式簡單說明】 〔圖1〕對於適用有本發明之乾蝕刻裝置的構成作模 式性展示之剖面圖。 〔圖2〕圖1之乾蝕刻裝置的平面圖。 〔圖3〕對於使內側以及外側天線線圈作相對移動並 進行了蝕刻的情況時之蝕刻速度的分布作展示之圖。 〔圖4〕對於天線線圈之變形例作展示的平面圖。 〔圖5〕對於天線線圈之其他變形例作展示的平面圖 〇 〔圖6〕追隨手段之模式性剖面圖》 -16- 201145345 【主要元件符號說明】 1 :真空腔 2 a :內側天線線圈 2b :外側天線線圈 3 :匹配箱 4 :第1高頻電源 20 :天線線圈 Μ :移動手段The bias power (frequency 12.5 MHz) entering the substrate electrode 6 was set to 800 W. At the start of the experiment, the two antenna coils 2a and 2b were brought into contact with the upper wall 10, and the upper wall 10 and the antenna coil 2a were attached. Both of G1 and G2 at intervals of 2b were set to 〇, and etching was performed under the above conditions (Comparative Example). Further, in a state in which the outer antenna coil 2b is brought into contact with the upper wall 10, the inner antenna coil 2a is moved upward by the moving means ,, and the interval G1 is changed to 8 mm (Invention 1), 16 mm (Invention 2) and 24 mm (Invention 3) were etched under the same etching conditions for other wafers. Fig. 3 is a graph showing the results of measuring the distribution of the etching rate when etching by the above conditions. The measurement point of the etching rate is set to 5 points on the line passing through the center of the germanium wafer (the left direction in FIG. 1 is taken as one direction, and is set to -145 mm, -75 mm, 0 mm (substrate center), 75 mm, 14 5mm ). According to the above experiment, it can be seen that in the comparative example, the etching rate at the center of the substrate is locally increased, and as a result, the etching rate in the surface of the substrate is not uniform. 1 to Invention 3 In general, it can be seen that if the inner antenna coil 2a is moved upward and the interval G1 is changed, the etching rate is changed with respect to the result of the comparative example. Further, in Invention 1, it is understood that the uniformity of the etching rate in the plane of the substrate is remarkably improved. In addition, although the experimental examples are not specifically shown, it is also known that if the etching conditions or the use state of the vacuum chamber are changed, the distribution of the magnetic field strength and the electric field strength generated in the vacuum chamber 1 is Meeting-13- 201145345 has changed. In this case, for example, when the same etching apparatus is used and the type of the gas is changed to etch the substrate in general, it is necessary to preliminarily correspond to each type of the etching gas in accordance with the etching conditions. It is preferable to take out the gaps G1 and G2 at which the desired etching speed can be obtained, and to move the inner antenna coil 2a and the outer antenna coil 2b relatively to each other so as to obtain the interval G1 and G2 to be taken out. Further, the inner antenna coil 2a and the outer antenna coil 2b may be automatically moved in accordance with the use state of the vacuum chamber 1. Although the above description has been made on the embodiment in which the present invention is applied to an etching apparatus, the present invention is not limited to the above embodiment. The present invention can also be applied to a case where a film is formed by a sputtering method or a plasma CVD method. Further, in the above-described embodiment, the C-shaped inner antenna coil 2a and the outer antenna coil 2b having different diameters are arranged along the upper wall 10, and the inner antenna coil 2a or the outer antenna coil 2b are integrated. The description is made by taking the case of moving (upwardly) upwards or moving downward to make it relatively movable. However, it is not limited thereto. As an antenna coil of a modified example, as shown in FIG. 4, when three antenna coils 12a, 12b, and 12c having the same shape are combined and arranged along the upper wall, they are made to have different diameters. The two concentric circles are diffused in a general shape in a corrugated shape. As the holding portion 21c for holding the antenna turns 12a' 12b and 12c, a support piece for extending from the outer peripheral end of the base toward the outer side in the radial direction is used. In the case of 212, the front end of the support piece 212, 14-201145345, is screwed together at a portion which constitutes the inner circumference of the antenna coils 12a, 12b, and 12c. In this case, the portion constituting the outer circumference of the antenna coils 1 2a, 12b, and 12c is fixed to the upper wall 10 of the true cavity 1 by using the fixing member 24. As a result, when the drive shaft 22c is moved upward or downward by the drive unit 23c, the portions of the inner circumferences of the antenna coils 12a, 12b, and 12c are integrally moved. Further, as an antenna coil of another modification, as shown in FIG. 5, one antenna coil can be wound into a spiral shape. In this case, the antenna line 20 and the straight line L extending in the radial direction through the center of the antenna coil 20 are equally spaced from each other in a place where they intersect at a distance from the center. At both PI and P2, both end portions of the holding portion 21 of a specific length are screwed in advance. Then, the drive shaft 22 which is moved upward or downward by the drive portion 23 is coupled to the holding portion 21. Thereby, by moving a portion of the antenna coil 20 wound into a spiral shape upward or downward relative to the other portions, the strength of the magnetic field and the electric field strength generated in the vacuum chamber 1 can be made. Local changes. In addition, it is possible to use two antenna coils to arrange the antenna coils to be in a spiral shape along the upper wall 10 of the vacuum chamber 1. In this case, the connection between the inner portion and the outer portion is used. The moving means is provided at the place, and it is configured such that the inner portion and the outer portion can be relatively moved. Further, in the above-described embodiment, the case where two moving means are provided to move the outer antenna wire 2b upward or downward is described as an example. However, the number of moving means is It is suitable to change depending on the type or diameter of the antenna coil. In addition, it is also possible to construct one of the means of mobility by following the means of follow-up -15-201145345. As the following means 30, as shown in FIG. 6, a plate spring or a coil spring or the like which pushes the antenna coil 2b upward by a force which cancels the weight of the outer antenna coil 2b by itself is used. The elastic means 31 formed may be formed. In this case, at a support member 33 fixed at a specific position 34 of the uranium engraving device, a portion of the outer antenna coil 2b is preliminarily suspended by the elastic means 31 and the support member 32. Then, for example, when the opposing portion of the outer antenna coil 2b is moved upward by the moving means, if the outer antenna wire 2b is tilted by its own weight, the force is offset by the weight of the outer side. The antenna coil 2b is pushed while the outer antenna coil 2b is held slightly horizontal. According to this, it is possible to reduce the number of driving portions for relatively moving the antenna coil, and it is possible to reduce the cost. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A cross-sectional view schematically showing a configuration of a dry etching apparatus to which the present invention is applied. [Fig. 2] A plan view of the dry etching apparatus of Fig. 1. Fig. 3 is a view showing the distribution of the etching speed in the case where the inner and outer antenna coils are relatively moved and etched. Fig. 4 is a plan view showing a modification of the antenna coil. Fig. 5 is a plan view showing another modification of the antenna coil. Fig. 6 is a schematic sectional view of the follow-up means. -16- 201145345 [Description of main components] 1 : Vacuum chamber 2 a : Inner antenna coil 2b: Outer antenna coil 3: Matching box 4: First high frequency power supply 20: Antenna coil Μ: Moving means