CN116998224A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
CN116998224A
CN116998224A CN202280021245.5A CN202280021245A CN116998224A CN 116998224 A CN116998224 A CN 116998224A CN 202280021245 A CN202280021245 A CN 202280021245A CN 116998224 A CN116998224 A CN 116998224A
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CN
China
Prior art keywords
antenna
processing apparatus
plasma processing
magnetic field
disk
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CN202280021245.5A
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Chinese (zh)
Inventor
松尾大辅
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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Publication of CN116998224A publication Critical patent/CN116998224A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention uniformly performs plasma treatment on an object to be treated. A plasma processing device (1) is provided with: a vacuum container (2) for accommodating an object (W1) to be processed therein; an antenna (6) which is provided outside the vacuum container (2) and generates a high-frequency magnetic field; a magnetic field introduction window (3) which is provided on a wall surface (22) of the vacuum container (2) and which introduces a high-frequency magnetic field into the vacuum container (2); and a mechanism unit (7) for moving the antenna (6) in parallel along the magnetic field introduction window (3) in a state in which the antenna (6) generates a high-frequency magnetic field.

Description

Plasma processing apparatus
Technical Field
The present invention relates to a plasma processing apparatus.
Background
Patent document 1 discloses a plasma processing apparatus including: a metal plate having a slit formed therein; a dielectric plate which is supported in contact with the metal plate and blocks the slit; and an antenna provided outside the processing chamber so as to face the metal plate, and generating a high-frequency magnetic field. The plasma processing apparatus disclosed in patent document 1 can efficiently supply a high-frequency magnetic field generated from an antenna to a processing chamber.
Prior art literature
Patent literature
Patent document 1: japanese laid-open patent publication No. 2020-198282 "
Disclosure of Invention
Problems to be solved by the invention
In the plasma processing apparatus disclosed in patent document 1, a plurality of antennas are arranged in a straight line outside a processing chamber. Since the plasma is stronger as it approaches the antenna, there is a problem in that the plasma processing apparatus cannot uniformly process the object to be processed placed in the processing chamber.
An object of an embodiment of the present invention is to uniformly perform plasma treatment on an object to be treated.
Technical means for solving the problems
In order to solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: a vacuum container for accommodating an object to be processed therein; an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; a magnetic field introduction window provided on a wall surface of the vacuum chamber, and configured to introduce the high-frequency magnetic field into the vacuum chamber so as to generate plasma in the vacuum chamber; and a mechanism unit that moves the antenna in parallel along the magnetic field introduction window in a state where the high-frequency magnetic field is generated by the antenna.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an embodiment of the present invention, plasma treatment can be uniformly performed on an object to be treated.
Drawings
FIG. 1 is a cross-sectional view showing a cross-sectional structure of a plasma processing apparatus according to embodiment 1 of the present invention.
Fig. 2 is a perspective view of the plasma processing apparatus shown in fig. 1.
Fig. 3 is a cross-sectional view showing a cross-sectional structure of a connecting portion of a mechanism portion included in the plasma processing apparatus shown in fig. 2.
FIG. 4 is a cross-sectional view showing a cross-sectional structure of a plasma processing apparatus according to embodiment 2 of the present invention.
Fig. 5 is a perspective view of a plasma processing apparatus according to embodiment 3 of the present invention.
FIG. 6 is a cross-sectional view showing a cross-sectional structure of a connecting portion of a mechanism unit included in the plasma processing apparatus according to embodiment 3 of the present invention.
Detailed Description
[ embodiment 1]
Structure of plasma processing apparatus 1
Fig. 1 is a cross-sectional view showing a cross-sectional structure of a plasma processing apparatus 1 according to embodiment 1 of the present invention. In fig. 1, the direction in which the antenna 6 moves is the X-axis direction, the direction from the vacuum chamber 2 toward the magnetic field introduction window 3 is the Z-axis direction, and the direction orthogonal to both the X-axis direction and the Z-axis direction is the Y-axis direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are mutually orthogonal directions. Reference numerals 101 and 102 in fig. 1 denote a case where the antenna 6 is moved in the X-axis direction by the mechanism 7. In fig. 1, the antenna 6 and the mechanism 7 are not cross-sectional views but are viewed from the Y-axis direction.
As shown in fig. 1, the plasma processing apparatus 1 is an apparatus that performs plasma processing on an object to be processed W1 such as a substrate using an inductively coupled plasma P1. Here, the substrate is, for example, a substrate for a flat panel display (flat panel display, FPD) such as a liquid crystal display or an organic Electroluminescence (EL) display, or a flexible substrate for a flexible display. The object W1 to be processed may be a semiconductor substrate used for various purposes. Further, the object W1 to be processed is not limited to a substrate-like shape, for example, as in a tool. The treatment to be performed on the object W1 is, for example, film formation by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method or a sputtering method, etching by plasma, ashing, removal of a coating film, or the like.
The plasma processing apparatus 1 includes: a vacuum vessel 2, a magnetic field introduction window 3, an antenna 6, a mechanism 7, a high-frequency power supply 8, and a holding unit 9. Fig. 2 shows the high-frequency power supply 8. A processing chamber 21 into which a gas is introduced while being evacuated is formed inside the vacuum chamber 2. The holding portion 9 is accommodated in the processing chamber 21, and the holding portion 9 is a stage for holding the object W1 to be processed. The vacuum vessel 2 is, for example, a metal vessel. An opening 23 penetrating in the thickness direction is formed in the wall surface 22 of the vacuum chamber 2. The vacuum vessel 2 is electrically grounded.
The gas introduced into the processing chamber 21 may be a gas corresponding to the processing content of the object W1 stored in the processing chamber 21. For example, in the case of forming a film on the object W1 by the plasma CVD method, the gas is a source gas or H is used 2 And the like, and the diluted gas is diluted by the diluent gas. Further specifically, the source gas is SiH 4 In the case of (2), a Si film may be formed on the object W1 to be processed, and SiH may be used as the source gas 4 +NH 3 In the case of (2), a SiN film may be formed on the object W1, and SiH may be used as the source gas 4 +O 2 In the case of (2), siO can be formed on the object W1 to be processed 2 A membrane of SiF as a raw material gas 4 +N 2 In the case of (2), siN may be formed on the object W1: f film (silicon fluoride nitride film).
The magnetic field introduction window 3 has a metal plate 4 and a dielectric plate 5. The magnetic field introduction window 3 introduces the high-frequency magnetic field generated from the antenna 6 into the processing chamber 21 in order to generate the plasma P1 in the processing chamber 21. The metal plate 4 and the dielectric plate 5 are disposed in this order in the Z-axis direction.
Fig. 2 is a perspective view showing only the components necessary for the explanation of the plasma processing apparatus 1 shown in fig. 1. In fig. 2, the vacuum vessel 2, the dielectric plate 5, the housing B1, and the like are not shown. Reference numerals 201 and 202 in fig. 2 denote the case where the antenna 6 is moved in the X-axis direction by the mechanism 7.
The metal plate 4 is provided on the wall surface 22 of the vacuum chamber 2 so as to close the opening 23. The metal plate 4 is formed with a plurality of slits 41 penetrating the metal plate 4 in the Z-axis direction. The plurality of slits 41 extend in the X-axis direction (first direction), respectively, and the plurality of slits 41 are arranged in a manner aligned along the Y-axis direction (second direction). The metal plate 4 is disposed substantially parallel to the surface of the object W1.
The dielectric plate 5 is provided so as to be in contact with the metal plate 4 from the outside of the vacuum vessel 2, and overlaps the metal plate 4. The dielectric plate 5 is provided on the surface of the metal plate 4 on the antenna 6 side so as to block the plurality of slits 41 from the outside of the vacuum chamber 2. The dielectric plate 5 isolates the inside of the vacuum vessel 2 from the outside. Thereby, the vacuum state of the processing chamber 21 can be maintained by the dielectric plate 5. More specifically, the vacuum state of the processing chamber 21 is maintained by the metal plate 4 closing the opening 23 and the dielectric plate 5 closing the plurality of slits 41.
The dielectric plate 5 is entirely made of a dielectric substance, and the dielectric plate 5 has a flat plate shape. The material constituting the dielectric plate 5 may be a ceramic such as alumina, silicon carbide, or silicon nitride, an inorganic material such as quartz glass, or alkali-free glass, or a resin material such as a fluororesin such as polyimide or Teflon (registered trademark). When the material constituting the dielectric plate 5 includes teflon, the dielectric plate 5 may have a partially permeable region, or may have a structure in which a glass sheet is bonded to a teflon sheet.
The antenna 6 is provided in a straight line outside the vacuum chamber 2, and is supported by the mechanism 7 so as to face the magnetic field introduction window 3 and extend in the Y-axis direction. By providing the antenna 6 outside the vacuum chamber 2, the influence of the radiant heat from the antenna 6 on the object W1 to be processed can be reduced as compared with the case where the antenna 6 is provided inside the vacuum chamber 2. Thus, the object W1 including the film material can be subjected to plasma treatment. The antenna 6 is disposed substantially parallel to the surface of the object W1 to be processed accommodated in the processing chamber 21.
When high-frequency power is applied from the high-frequency power source 8 through the mechanism 7, the antenna 6 generates a high-frequency magnetic field. Thereby, an induced electric field is generated in the space surrounded by the processing chamber 21, and the inductively coupled plasma P1 is generated in the space. The high-frequency magnetic field generated from the antenna 6 is supplied to the processing chamber 21 through the dielectric plate 5 and the plurality of slits 41.
Structure of mechanism 7
The mechanism 7 moves the antenna 6 in parallel in the X-axis direction along the magnetic field introduction window 3 in a state where the antenna 6 generates a high-frequency magnetic field. At this time, the mechanism 7 moves the antenna 6 in parallel along the plane F1. The plane F1 is parallel to the XY plane and parallel to the surface of the object W1 to be processed.
The antenna 6 is moved in parallel in the X-axis direction, which is the direction in which the plurality of slits 41 extend, and the high-frequency magnetic field generated from the antenna 6 can be continuously supplied from the slits 41 to the object W1 to be processed, so that the object W1 to be processed can be efficiently plasma-processed. In addition, the surface area of the object W1 to be processed can be subjected to plasma processing.
As shown in fig. 2, the mechanism 7 includes arms A1 to A6 and connection portions C1 to C4. When high-frequency power is supplied from the high-frequency power supply 8 to the antenna 6, current flows from the high-frequency power supply 8 in the order of the arm A5, the connection portion C2, the arm A2, the connection portion C1, the arm A1, the antenna 6, the arm A3, the connection portion C3, the arm A4, the connection portion C4, and the arm A6. The arms A1 to A6 are members having conductivity.
The arms A1 to A6 are members for supporting the antenna 6 and supplying high-frequency power to the antenna 6. The arm A1 has a linear portion a11 and a rotation axis a12. One end of the linear portion a11 is connected to the power supply side end portion 61 of the antenna 6, and the other end of the linear portion a11 is connected to the rotation shaft a12 in a curved manner.
The connecting portion C1 rotatably connects the arms A1 and A2. The coupling portion C1 has a first disk C11 as a first member and a second disk C12 as a second member. The first disk C11 is fixed together with the rotation shaft a12. That is, the first disk C11 is fixed to one of the arm ends of the arm A1 connected to the connecting portion C1. The second disk C12 is fixed together with the rotation axis a22 of the arm A2. That is, the second disk C12 is fixed to the other arm end of the arm A2 connected to the connecting portion C1.
The arm A2 has a straight portion a21, a rotation axis a22, and a rotation axis a23. One end of the linear portion a21 is connected to the rotation axis a22 in a curved manner, and the other end of the linear portion a21 is connected to the rotation axis a23 in a curved manner.
The connection portion C2 rotatably connects the arms A2 and A5. The coupling portion C2 has a first disk C21 as a first member and a second disk C22 as a second member. The first disk C21 is fixed together with the rotation shaft a23. That is, the first disk C21 is fixed to one arm end of the arm A2 connected to the connecting portion C2. The second disk C22 is fixed together with the arm A5 as a rotation shaft. That is, the second disk C22 is fixed to the other arm end of the arm A5 connected to the connecting portion C2. One of the arm ends of the arm A5 is electrically connected to the high-frequency power source 8.
One end of the arm A3 is connected to the ground-side end 62 of the antenna 6. The arm A3, the connecting portion C3, the arm A4, and the connecting portion C4 have the same structures as the arm A1, the connecting portion C1, the arm A2, and the connecting portion C2, respectively. One arm end of the arm A6 is electrically grounded, i.e., connected to the ground, and the other arm end of the arm A6 is connected to the connecting portion C4.
Structure of connecting portion C1
Fig. 3 is a cross-sectional view showing a cross-sectional structure of the connecting portion C1 of the mechanism portion 7 included in the plasma processing apparatus 1 shown in fig. 2. In the connection portion C1, the first disk C11 and the second disk C12 are preferably rotatable relative to each other, and the first disk C11 and the second disk C12 constitute a capacitor. In this way, the reactance of the antenna 6 is reduced by the capacitor, and the first disk C11 and the second disk C12 are rotated relatively to each other, whereby the antenna 6 can be moved in parallel along the magnetic field introduction window 3. The following will explain the present invention in detail.
As shown in fig. 3, the connecting portion C1 has a frame B1 containing a resin. The frame B1 holds the first disk C11 and the second disk C12 in parallel with the gap G1 therebetween, and supports them so as to be rotatable with respect to each other, so that the first disk C11 and the second disk C12 constitute a parallel plate capacitor. Thus, the first disk C11 and the second disk C12 can mutually rotate at the connection portion C1, and can constitute a parallel plate capacitor. Inside the housing B1, recesses 71 and 72 are formed in parallel with each other with a space therebetween. The concave portions 71 and 72 are formed in the inside of the housing B1 in a ring shape. The first circular plate C11 enters the recess 71, and the second circular plate C12 enters the recess 72.
An opening 73 and an opening 74 are formed on both sides of the housing B1, the rotation shaft a12 enters the opening 73, and the rotation shaft a22 enters the opening 74. A seal member 75 is provided between the opening 73 and the rotary shaft a12, and a seal member 76 is provided between the opening 74 and the rotary shaft a22. The seal members 75 and 76 are used to prevent the coolant filled in the inside of the casing B1 from leaking to the outside of the casing B1, and are, for example, O-rings.
The antenna 6, the arms A1 to A6, and the connection portions C1 to C4 are formed with a flow path FL1 through which the cooling liquid flows. In the connection portion C1, a flow path FL1 is formed inside the rotation shafts a12 and a22. This suppresses heat generation from the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4, and thus reduces the thermal influence from the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4 on the object W1 to be processed.
The antenna 6 and the arms A1 to A6 are hollow pipes in which a flow path FL1 through which the cooling liquid flows is formed. The coolant is circulated through the flow path FL1 formed in the rotation shafts a12 and a22, whereby the inside of the housing B1 is filled with the coolant. The coolant flowing through the flow path FL1 is preferably water having a high electric resistance, for example, pure water or water close thereto, from the viewpoint of electrical insulation. As the cooling liquid, for example, a liquid refrigerant other than water such as a fluorine-based inert liquid may be used.
The mechanism 7 is provided with motors M1 and M2 for rotating the first disk C11 and the second disk C12 of the coupling unit C1 relative to each other. Specifically, the motor M1 is provided to the rotation shaft a12, and the motor M2 is provided to the rotation shaft a22. The motors M1 and M2 are electrically connected to a control unit 10 included in the plasma processing apparatus 1.
The motor M1 rotates the rotation shaft a12, and the linear portion a11 connected to the rotation shaft a12 rotates around an axis parallel to the Y-axis direction and along the rotation shaft a12. The motor M2 rotates the rotation shaft a22, and the linear portion a21 connected to the rotation shaft a22 rotates around the axis parallel to the Y-axis direction and along the rotation shaft a22.
The control unit 10 controls the parallel movement of the antenna 6 by the rotation angles of the motors M1 and M2. The control unit 10 transmits control signals to the motors M1 and M2 to move the antenna 6 in parallel along the plane F1 shown in fig. 1. By rotating the first disk C11 and the second disk C12 of the coupling unit C1 relative to each other by the motors M1 and M2, the control unit 10 can easily position the antenna 6 by the rotation operation of the motors M1 and M2. The cross-sectional structures of the connecting portions C2 to C4 are the same as the cross-sectional structure of the connecting portion C1 shown in fig. 3. The motor M2 may be provided on the rotation shaft a23 instead of the rotation shaft a22.
As described above, in the plasma processing apparatus 1, the antenna 6 generating the high-frequency magnetic field moves in parallel with the magnetic field introduction window 3 provided on the wall surface 22 of the vacuum chamber 2, and thus the object W1 to be processed can be uniformly plasma processed. Further, since the mechanism 7 moves the antenna 6 in parallel outside the vacuum chamber 2, generation of particles can be suppressed when the moving mechanism is provided in the processing chamber 21.
[ embodiment 2]
Embodiment 2 of the present invention is described below. For convenience of explanation, members having the same functions as those described in embodiment 1 are denoted by the same reference numerals, and the description thereof will not be repeated. Fig. 4 is a cross-sectional view showing a cross-sectional structure of a plasma processing apparatus 1A according to embodiment 2 of the present invention.
As shown in fig. 4, the plasma processing apparatus 1A is different from the plasma processing apparatus 1 of embodiment 1 in that a detection unit 11 is included. The detection unit 11 detects the light emission of the plasma P1 generated by the antenna 6. Specifically, the detection unit 11 is, for example, a spectroscope, and detects the emission intensity of a specific wavelength. The detection unit 11 is provided in plurality in the processing chamber 21 and is disposed between the object W1 to be processed and the metal plate 4. The plurality of detection units 11 are arranged in the X-axis direction and are arranged substantially parallel to the surface of the object W1.
The control unit 10 is also connected to the plurality of detection units 11, and controls the parallel movement of the antenna 6 by the mechanism unit 7 based on the light emission of the plasma P1 detected by the plurality of detection units 11. Specifically, the control unit 10 controls the movement speed of the antenna 6 by the mechanism unit 7 based on the light emission intensity of the plasma P1 at the specific wavelength detected by the plurality of detection units 11. This allows the position of the antenna 6 to be adjusted while detecting the light emission of the plasma P1, and thus the process of the plasma P1 can be easily adjusted.
[ embodiment 3]
Embodiment 3 of the present invention is described below. For convenience of explanation, members having the same functions as those described in embodiment 1 are denoted by the same reference numerals, and the description thereof will not be repeated. Fig. 5 is a perspective view showing only the components necessary for the explanation of the plasma processing apparatus 1B according to embodiment 3 of the present invention. In fig. 5, the vacuum vessel 2, the dielectric plate 5, and the like are not shown. Reference numerals 301 and 302 in fig. 5 denote the case where the antenna 6 is moved in the X-axis direction by the mechanism 7A.
As shown in fig. 5, the plasma processing apparatus 1B is different from the plasma processing apparatus 1 of embodiment 1 in that the mechanism 7 is changed to a mechanism 7A. The mechanism 7A includes a connection portion 81, arms 82 to 85, a carriage 91, a rail 93, and a rail 94. The connection portion 81 is electrically connected to the high-frequency power source 8 via the wiring W2, and is electrically connected to the arms 82 and 84. The arms 82 to 85 are members having conductivity, respectively.
One end of the arm 82 is electrically connected to the connection portion 81, and the other end of the arm 82 is curvedly connected to one end of the arm 83. The other end of the arm 83 is connected to one end of the antenna 6. One end of the arm 84 is electrically connected to the connection portion 81, and the other end of the arm 84 is curvedly connected to one end of the arm 85. The other end of the arm 85 is connected to the other end of the antenna 6.
The connection portion 81 is provided on the carriage 91, and wheels 92 of the carriage 91 move on the rails 93 and 94. The rails 93 and 94 are disposed substantially parallel to the surface of the object W1. The rails 93, 94 extend in the X-axis direction.
The antenna 6 moves in parallel along the magnetic field introduction window 3 by the wheels 92 moving on the rails 93, 94. The wheels 92 are provided with motors, not shown, which are electrically connected to the control unit 10. The control unit 10 controls the parallel movement of the antenna 6 by the rotation angle of a motor provided to the wheel 92.
[ embodiment 4]
Embodiment 4 of the present invention is described below. For convenience of explanation, members having the same functions as those described in embodiment 1 are denoted by the same reference numerals, and the description thereof will not be repeated. Fig. 6 is a cross-sectional view showing the cross-sectional structures of the connecting portions CN1 and CN2 of the mechanism portion included in the plasma processing apparatus according to embodiment 3 of the present invention. The control unit 10 is omitted in fig. 6.
In the plasma processing apparatus according to embodiment 3, as compared with the plasma processing apparatus 1 according to embodiment 1, as shown by reference numeral 401 in fig. 6, the connection portion C1 is changed to the connection portion CN1, the rotation axis a12 is changed to the arm member AR1, and the housing B1 is changed to the housing B2. The connection portion CN1 includes a frame B2 as a first member and a second disk C12 as a second member. The frame B2 is fixed together with the arm member AR 1. That is, the frame B2 is fixed to one of the arm ends of the arm connected to the connecting portion CN 1. The flow path FL1 may be formed in the arm member AR 1. The frame B2 is a member having conductivity.
An opening 72A is formed on one side of the housing B2, and the rotation shaft a22 enters the opening 72A. A seal member 73A is provided between the opening 72A and the rotation shaft a22. The seal member 73A is for preventing the coolant filled in the inside of the frame B2 from leaking to the outside of the frame B2, for example, an O-ring.
The frame B2 and the second disk C12 are rotatable relative to each other, and the frame B2 and the second disk C12 constitute a capacitor. Specifically, a capacitor is formed between the inner wall 71A of the housing B2 and the second disk C12.
The rotary shaft a22 is rotatably supported by the seal member 73A at the opening 72A. That is, the frame B2 rotatably supports the second disk C12. This makes it possible to fix the frame B2 so as not to rotate and to rotate the second disk C12. Therefore, the motor M1 is not required, so that the number of motors required for rotation can be reduced.
< modification >
Reference numeral 402 in fig. 6 is a cross-sectional view showing a cross-sectional structure of a modification of the connecting portion CN1 shown in reference numeral 401 in fig. 6. As shown in reference numeral 402 of fig. 6, the connecting portion CN2 may change the frame B2 to the frame B3 and the rotation axis a22 to the rotation axis AR2, compared to the connecting portion CN 1.
The connection portion CN2 includes a frame B3 as a first member, and a disk CA, a disk CB, and a disk CC as a second member. The frame B3 is fixed together with the arm member AR 1. That is, the frame B3 is fixed to one of the arm ends of the arm connected to the connecting portion CN 2. The frame B3 is a member having conductivity.
An opening 74B is formed on one side of the housing B3, and the rotation shaft AR2 enters the opening 74B. A seal member 75B is provided between the opening 74B and the rotary shaft AR2. The seal member 75B is for preventing the coolant filled in the inside of the frame B3 from leaking to the outside of the frame B3, for example, an O-ring.
The frame B3 is rotatable relative to the disks CA, CB, and CC, and the frame B3 and the disks CA, CB, and CC constitute a capacitor. The disks CA, CB, CC are disposed in parallel with the rotation shaft AR2 with a space therebetween. Inside the housing B3, the convex portions 72B and 73B are formed in parallel with each other with a space therebetween. The convex portions 72B and 73B are formed in a ring shape inside the housing B3.
The disk CA is disposed between the inner wall 71B of the housing B3 and the projection 72B, the disk CB is disposed between the projection 72B and the projection 73B, and the disk CC is disposed in the vicinity of the projection 73B. Thus, a capacitor is formed between the disk CA and the convex portion 72B, a capacitor is formed between the disk CB and the convex portion 72B and the convex portion 73B, and a capacitor is formed between the disk CC and the convex portion 73B. The rotary shaft AR2 is rotatably supported by the seal member 75B at the opening 74B. That is, the frame B3 rotatably supports the disk CA, the disk CB, and the disk CC.
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments in which the technical means disclosed in the different embodiments are appropriately combined are also included in the technical scope of the present invention.
Description of symbols
1. 1A, 1B: plasma processing apparatus
2: vacuum container
3: magnetic field leading-in window
4: metal plate
5: dielectric plate
6: antenna
7. 7A: mechanism part
10: control unit
11: detection unit
22: wall surface
41: slit(s)
82-85, A1-A6: arm
B1: frame body
B2 and B3: frame (first component)
C1 to C4, CN1, CN2: connecting part
C11, C21: first circular plate (first component)
C12, C22: second circular plate (second component, circular plate)
CA. CB, CC: circular plate
FL1: flow path
G1: gap of
M1 and M2: motor with a motor housing
P1: plasma body
W1: object to be treated

Claims (9)

1. A plasma processing apparatus, characterized by comprising: a vacuum container for accommodating an object to be processed therein;
an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field;
a magnetic field introduction window provided on a wall surface of the vacuum chamber, and configured to introduce the high-frequency magnetic field into the vacuum chamber so as to generate plasma in the vacuum chamber; and
and a mechanism unit that moves the antenna in parallel along the magnetic field introduction window in a state where the high-frequency magnetic field is generated by the antenna.
2. The plasma processing apparatus according to claim 1, wherein the magnetic field introduction window has a dielectric plate that isolates an inside of the vacuum chamber from an outside.
3. The plasma processing apparatus according to claim 2, wherein the magnetic field introduction window further comprises a metal plate having a plurality of slits formed therein and disposed in contact with the dielectric plate,
the plurality of slits each extend in a first direction and are arranged in a manner to be aligned along a second direction orthogonal to the first direction,
the antenna is a linear antenna arranged to extend in the second direction,
the mechanism section moves the antenna in parallel in the first direction.
4. A plasma processing apparatus according to any one of claims 1 to 3, wherein the mechanism section has:
a plurality of arms for supporting the antenna and supplying high-frequency power to the antenna; and
a connecting part for rotatably connecting the arms,
the connecting portion has:
a first member fixed to one of the arm ends connected to the connecting portion; and
a second member fixed to the other arm end connected to the connecting portion;
the first member and the second member are relatively rotatable, and the first member and the second member constitute a capacitor.
5. The plasma processing apparatus according to claim 4, wherein a motor is provided in the mechanism portion, the motor rotates the first member and the second member of the coupling portion relative to each other,
the plasma processing apparatus further includes a control section that controls parallel movement of the antenna by a rotation angle of the motor.
6. The plasma processing apparatus according to claim 4 or 5, wherein the coupling portion has a frame that holds a first disk and a second disk in parallel with a gap therebetween and supports them so as to be rotatable with respect to each other, so that the first disk as the first member and the second disk as the second member constitute a parallel plate capacitor.
7. The plasma processing apparatus according to claim 4 or 5, wherein a frame body as the first member rotatably supports a disk as the second member.
8. The plasma processing apparatus according to any one of claims 4 to 7, wherein a flow path through which a cooling liquid flows is formed in the antenna, the arm, and the connecting portion.
9. The plasma processing apparatus according to any one of claims 1 to 4, characterized by further comprising: a detection unit configured to detect light emission of plasma generated from the antenna; and
and a control unit configured to control the parallel movement of the antenna by the mechanism unit based on the light emission of the plasma detected by the detection unit.
CN202280021245.5A 2021-07-26 2022-07-11 Plasma processing apparatus Pending CN116998224A (en)

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JP2021121666A JP2023017411A (en) 2021-07-26 2021-07-26 Plasma processing system
PCT/JP2022/027182 WO2023008152A1 (en) 2021-07-26 2022-07-11 Plasma processing apparatus

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