TWI823099B - 曝光設備，曝光方法及物件製造方法 - Google Patents

曝光設備，曝光方法及物件製造方法 Download PDF

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Publication number
TWI823099B
TWI823099B TW110119995A TW110119995A TWI823099B TW I823099 B TWI823099 B TW I823099B TW 110119995 A TW110119995 A TW 110119995A TW 110119995 A TW110119995 A TW 110119995A TW I823099 B TWI823099 B TW I823099B
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TW
Taiwan
Prior art keywords
light
solid
distribution
emitting element
collimating lens
Prior art date
Application number
TW110119995A
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English (en)
Chinese (zh)
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TW202212983A (zh
Inventor
鈴木敢士
八講学
Original Assignee
日商佳能股份有限公司
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Publication of TW202212983A publication Critical patent/TW202212983A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/005—Diaphragms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Prostheses (AREA)
  • Eyeglasses (AREA)
TW110119995A 2020-06-04 2021-06-02 曝光設備，曝光方法及物件製造方法 TWI823099B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-097739 2020-06-04
JP2020097739A JP7508278B2 (ja) 2020-06-04 2020-06-04 露光装置、露光方法、及び物品の製造方法

Publications (2)

Publication Number Publication Date
TW202212983A TW202212983A (zh) 2022-04-01
TWI823099B true TWI823099B (zh) 2023-11-21

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Country Status (5)

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US (1) US11841614B2 (https=)
JP (1) JP7508278B2 (https=)
KR (1) KR102900819B1 (https=)
CN (1) CN113759666B (https=)
TW (1) TWI823099B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7677004B2 (ja) * 2021-07-08 2025-05-15 ウシオ電機株式会社 照明光学系および露光装置
JP7751484B2 (ja) * 2021-12-27 2025-10-08 キヤノン株式会社 露光装置及び物品の製造方法
WO2025069249A1 (ja) * 2023-09-27 2025-04-03 株式会社ニコン 駆動方法、光源ユニット、照明ユニット、露光装置、及び露光方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070211231A1 (en) * 2006-03-07 2007-09-13 Suda Hiromi Exposure apparatus and device manufacturing method
US20090040497A1 (en) * 2007-08-08 2009-02-12 Canon Kabushiki Kaisha Exposure apparatus, adjusting method, exposure method, and device fabrication method
US20100220306A1 (en) * 2009-02-27 2010-09-02 Malach Joseph D Solid-state array for lithography illumination
US20180128458A1 (en) * 2016-07-21 2018-05-10 Citizen Electronics Co., Ltd. Light-emitting apparatus
CN108803244A (zh) * 2017-04-27 2018-11-13 上海微电子装备（集团）股份有限公司 照明装置及照明方法和一种光刻机

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2308667A (en) * 1995-12-29 1997-07-02 Hyundai Electronics Ind Exposure equipment for a semiconductor device
US6233039B1 (en) * 1997-06-05 2001-05-15 Texas Instruments Incorporated Optical illumination system and associated exposure apparatus
US7489387B2 (en) * 2006-11-30 2009-02-10 Canon Kabushiki Kaisha Exposure apparatus and device fabrication method
WO2015015749A1 (ja) 2013-08-02 2015-02-05 株式会社ニコンエンジニアリング 光源および露光装置
JP6128348B2 (ja) 2015-03-26 2017-05-17 ウシオ電機株式会社 光源装置、露光装置
JP6651124B2 (ja) 2015-03-28 2020-02-19 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP6506899B2 (ja) 2015-10-08 2019-04-24 日亜化学工業株式会社 発光装置、集積型発光装置および発光モジュール
JP2018092078A (ja) * 2016-12-06 2018-06-14 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法
JP7267761B2 (ja) 2019-01-31 2023-05-02 キヤノン株式会社 光源装置、照明装置、露光装置及び物品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070211231A1 (en) * 2006-03-07 2007-09-13 Suda Hiromi Exposure apparatus and device manufacturing method
US20090040497A1 (en) * 2007-08-08 2009-02-12 Canon Kabushiki Kaisha Exposure apparatus, adjusting method, exposure method, and device fabrication method
US20100220306A1 (en) * 2009-02-27 2010-09-02 Malach Joseph D Solid-state array for lithography illumination
US20180128458A1 (en) * 2016-07-21 2018-05-10 Citizen Electronics Co., Ltd. Light-emitting apparatus
CN108803244A (zh) * 2017-04-27 2018-11-13 上海微电子装备（集团）股份有限公司 照明装置及照明方法和一种光刻机

Also Published As

Publication number Publication date
TW202212983A (zh) 2022-04-01
CN113759666B (zh) 2024-09-13
JP7508278B2 (ja) 2024-07-01
KR20210150997A (ko) 2021-12-13
JP2021189397A (ja) 2021-12-13
US20210382397A1 (en) 2021-12-09
KR102900819B1 (ko) 2025-12-15
CN113759666A (zh) 2021-12-07
US11841614B2 (en) 2023-12-12

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