KR102900819B1 - 노광 장치, 노광 방법, 및 물품의 제조 방법 - Google Patents

노광 장치, 노광 방법, 및 물품의 제조 방법

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Publication number
KR102900819B1
KR102900819B1 KR1020210072134A KR20210072134A KR102900819B1 KR 102900819 B1 KR102900819 B1 KR 102900819B1 KR 1020210072134 A KR1020210072134 A KR 1020210072134A KR 20210072134 A KR20210072134 A KR 20210072134A KR 102900819 B1 KR102900819 B1 KR 102900819B1
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KR
South Korea
Prior art keywords
light
solid
emitting element
distribution
optical axis
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KR1020210072134A
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English (en)
Korean (ko)
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KR20210150997A (ko
Inventor
칸지 스즈키
마나부 핫코
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20210150997A publication Critical patent/KR20210150997A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/005—Diaphragms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Prostheses (AREA)
  • Eyeglasses (AREA)
KR1020210072134A 2020-06-04 2021-06-03 노광 장치, 노광 방법, 및 물품의 제조 방법 Active KR102900819B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-097739 2020-06-04
JP2020097739A JP7508278B2 (ja) 2020-06-04 2020-06-04 露光装置、露光方法、及び物品の製造方法

Publications (2)

Publication Number Publication Date
KR20210150997A KR20210150997A (ko) 2021-12-13
KR102900819B1 true KR102900819B1 (ko) 2025-12-15

Family

ID=78787272

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210072134A Active KR102900819B1 (ko) 2020-06-04 2021-06-03 노광 장치, 노광 방법, 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US11841614B2 (https=)
JP (1) JP7508278B2 (https=)
KR (1) KR102900819B1 (https=)
CN (1) CN113759666B (https=)
TW (1) TWI823099B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7677004B2 (ja) * 2021-07-08 2025-05-15 ウシオ電機株式会社 照明光学系および露光装置
JP7751484B2 (ja) * 2021-12-27 2025-10-08 キヤノン株式会社 露光装置及び物品の製造方法
WO2025069249A1 (ja) * 2023-09-27 2025-04-03 株式会社ニコン 駆動方法、光源ユニット、照明ユニット、露光装置、及び露光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100220306A1 (en) * 2009-02-27 2010-09-02 Malach Joseph D Solid-state array for lithography illumination
JP2016188878A (ja) * 2015-03-28 2016-11-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
US20180128458A1 (en) * 2016-07-21 2018-05-10 Citizen Electronics Co., Ltd. Light-emitting apparatus

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
GB2308667A (en) * 1995-12-29 1997-07-02 Hyundai Electronics Ind Exposure equipment for a semiconductor device
US6233039B1 (en) * 1997-06-05 2001-05-15 Texas Instruments Incorporated Optical illumination system and associated exposure apparatus
JP2007242775A (ja) * 2006-03-07 2007-09-20 Canon Inc 露光装置及びデバイス製造方法
US7489387B2 (en) * 2006-11-30 2009-02-10 Canon Kabushiki Kaisha Exposure apparatus and device fabrication method
JP2009043933A (ja) * 2007-08-08 2009-02-26 Canon Inc 露光装置、調整方法、露光方法及びデバイス製造方法
WO2015015749A1 (ja) 2013-08-02 2015-02-05 株式会社ニコンエンジニアリング 光源および露光装置
JP6128348B2 (ja) 2015-03-26 2017-05-17 ウシオ電機株式会社 光源装置、露光装置
JP6506899B2 (ja) 2015-10-08 2019-04-24 日亜化学工業株式会社 発光装置、集積型発光装置および発光モジュール
JP2018092078A (ja) * 2016-12-06 2018-06-14 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法
CN108803244B (zh) 2017-04-27 2021-06-18 上海微电子装备（集团）股份有限公司 照明装置及照明方法和一种光刻机
JP7267761B2 (ja) 2019-01-31 2023-05-02 キヤノン株式会社 光源装置、照明装置、露光装置及び物品の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100220306A1 (en) * 2009-02-27 2010-09-02 Malach Joseph D Solid-state array for lithography illumination
JP2016188878A (ja) * 2015-03-28 2016-11-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
US20180128458A1 (en) * 2016-07-21 2018-05-10 Citizen Electronics Co., Ltd. Light-emitting apparatus

Also Published As

Publication number Publication date
TW202212983A (zh) 2022-04-01
TWI823099B (zh) 2023-11-21
CN113759666B (zh) 2024-09-13
JP7508278B2 (ja) 2024-07-01
KR20210150997A (ko) 2021-12-13
JP2021189397A (ja) 2021-12-13
US20210382397A1 (en) 2021-12-09
CN113759666A (zh) 2021-12-07
US11841614B2 (en) 2023-12-12

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