TWI823046B - 晶圓結構 - Google Patents
晶圓結構 Download PDFInfo
- Publication number
- TWI823046B TWI823046B TW110101004A TW110101004A TWI823046B TW I823046 B TWI823046 B TW I823046B TW 110101004 A TW110101004 A TW 110101004A TW 110101004 A TW110101004 A TW 110101004A TW I823046 B TWI823046 B TW I823046B
- Authority
- TW
- Taiwan
- Prior art keywords
- inkjet
- wafer
- wafer structure
- inches
- ink supply
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 106
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000007639 printing Methods 0.000 claims abstract description 47
- 239000011241 protective layer Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 17
- 238000007641 inkjet printing Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- -1 aluminum silicon copper Chemical compound 0.000 claims description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 239000005360 phosphosilicate glass Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910016570 AlCu Inorganic materials 0.000 claims description 2
- 229910000951 Aluminide Inorganic materials 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910021124 PdAg Inorganic materials 0.000 claims description 2
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 2
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- MELCCCHYSRGEEL-UHFFFAOYSA-N hafnium diboride Chemical compound [Hf]1B=B1 MELCCCHYSRGEEL-UHFFFAOYSA-N 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims 2
- OOAWCECZEHPMBX-UHFFFAOYSA-N oxygen(2-);uranium(4+) Chemical compound [O-2].[O-2].[U+4] OOAWCECZEHPMBX-UHFFFAOYSA-N 0.000 claims 1
- FCTBKIHDJGHPPO-UHFFFAOYSA-N uranium dioxide Inorganic materials O=[U]=O FCTBKIHDJGHPPO-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 91
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000013461 design Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UUQFGGZKYHEYHH-UHFFFAOYSA-N O.O.[O-2].[O-2].[O-2].[U+6] Chemical compound O.O.[O-2].[O-2].[O-2].[U+6] UUQFGGZKYHEYHH-UHFFFAOYSA-N 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04541—Specific driving circuit
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- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
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- B41J2202/03—Specific materials used
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/11—Embodiments of or processes related to ink-jet heads characterised by specific geometrical characteristics
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
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Abstract
一種晶圓結構,包含晶片基板及至少一噴墨晶片。晶片基板為一矽基材,以半導體製程製出。至少一噴墨晶片以半導體製程製生成於晶片基板上,並切割成至少一噴墨晶片。噴墨晶片包含複數個墨滴產生器。複數個墨滴產生器以半導體製程製出生成於晶片基板上,且每一墨滴產生器包含熱障層、加熱電阻層、導電層、保護層、障壁層、供墨腔室及噴孔。
Description
本案關於一種晶圓結構,尤指以半導體製程製出適用於噴墨列印之噴墨晶片之晶圓結構。
目前市面上常見的印表機除雷射印表機外,噴墨印表機是另一種被廣泛使用的機種,其具有價格低廉、操作容易以及低噪音等優點,且可列印於如紙張、相片紙等多種噴墨媒體。而噴墨印表機之列印品質主要取決於墨水匣的設計等因素,尤其以噴墨晶片釋出墨滴至噴墨媒體之設計為墨水匣設計的重要考量因素。
如第1圖所示,以目前噴墨列印市場中所生產噴墨晶片係由一晶圓結構以半導體製程所製出,現階段墨滴產生器1’生產皆以6英吋以下晶圓結構所製出;然,該噴墨晶片之墨滴產生器1’ 以半導體製程所製出後會再覆蓋一噴孔板11’在其上所構成,而該噴孔板11’上有貫通至少一噴孔111’,供以對應到該墨滴產生器1’之一供墨腔室1a’之上方,促使該供墨腔室1a’所加熱之墨水得由該噴孔111’噴出噴印在列印媒介上。因此該噴孔板11’上之設計需要另外先行加工該噴孔111’,無法與該噴墨晶片之墨滴產生器1’同時在半導體製程上製出,不僅增加了製造工序,又該噴孔111’要精準對位去對應到該供墨腔室1a’之位置,要將該噴孔板11’ 對位覆蓋在該噴墨晶片之墨滴產生器1’上需要相對高的精準度;如此所製造出來該噴墨晶片製造成本高,這也是該噴墨晶片之製造成本不利於市場競爭力之關鍵因素。
又,在噴墨晶片在追求更高的高解析度與更高速列印之列印品質要求下,對於競爭激烈的噴墨列印市場中,噴墨印表機的售價下降的很快速,因此搭配墨水匣之噴墨晶片之製造成本以及更高解析度與更高速列印之設計成本就會取決於市場競爭力之關鍵因素。
但,以目前噴墨列印市場中所生產噴墨晶片係由一晶圓結構以半導體製程所製出,現階段噴墨晶片生產皆以6英吋以下晶圓結構所製出,又要同時追求更高的高解析度與更高速列印之列印品質要求下,相對噴墨晶片之可列印範圍(printing swath)之設計要變更大、更長,可大幅提高列印速度,如此噴墨晶片所需求整體面積就更大,因此要在6英吋以下有限面積之晶圓結構上製出需求噴墨晶片數量就會相當地受到限制,進而製造成本也無法有效地降低。
舉例說明,例如,一片6英吋以下晶圓結構製出噴墨晶片之可列印範圍(printing swath)為0.56英吋(inch)大概至多切割生成334顆噴墨晶片。若在一片6英吋以下晶圓結構上生成噴墨晶片之可列印範圍(printing swath)超過1英吋(inch)或者頁寬可列印範圍(printing swath)A4尺寸(8.3英吋(inch)來製出更高的高解析度與更高速列印之列印品質要求下,相對要在6吋以下有限面積之晶圓結構上製出需求噴墨晶片數量就會相當的受到限制,數量更少,在6吋以下有限面積之晶圓結構上製出需求噴墨晶片就會有浪費剩餘之空白面積,這些空百面積就會佔去整片晶圓面積的空餘率超過20%以上,相當浪費,進而製造成本也無法有效的降低。
有鑑於此,要如何符合噴墨列印市場中追求噴墨晶片之更低製造成本,以及追求更高解析度與更高速列印之列印品質,是本案最主要研發之主要課題。
本案之主要目的係提供一種晶圓結構,包含一晶片基板及複數個噴墨晶片,利用半導體製程來製出該晶片基板,促使該晶片基板上可佈置更多需求數量之噴墨晶片,也在相同的噴墨晶片半導體製程直接生成不同可列印範圍(printing swath)尺寸之噴墨晶片,同時在以半導體製程來製出之墨滴產生器過程中,並能同時將該墨滴產生器之供墨腔室及噴孔一體成型生成於障壁層中,因此如此製出噴墨晶片之半導體製程製出過程可以佈置需求更高解析度及更高性能之列印噴墨設計,最後切割成需求實施應用於噴墨列印之噴墨晶片,達到噴墨晶片之更低製造成本,以及追求更高解析度與更高速列印之列印品質。
本案之一廣義實施態樣為提供一種晶圓結構,包含:一晶片基板,為一矽基材,以至少12英吋(in)以上晶圓之半導體製程製出;至少一噴墨晶片,以半導體製程製直接生成於該晶片基板上,並切割成至少一個該噴墨晶片實施應用於噴墨列印;該噴墨晶片包含:複數個墨滴產生器,以半導體製程製出生成於該晶片基板上,且每一該墨滴產生器包含一熱障層、一加熱電阻層、一導電層、一保護層、一障壁層、一供墨腔室及一噴孔。
其中,該熱障層為一絕緣隔熱材料形成於該晶片基板上,該加熱電阻層為一電阻材料形成於該熱障層上,該導電層為一導電材料,該導電層之一部分形成於該加熱電阻層上,該保護層之一部分形成於該加熱電阻層上,該保護層之其他部分形成於該導電層上,而該障壁層為一高分子材料形成於該保護層上,且該供墨腔室及該噴孔一體成型於該障壁層中,且該供墨腔室底部連通該保護層,該供墨腔室頂部連通該噴孔。
體現本案特徵與優點的實施例將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化,其皆不脫離本案的範圍,且其中的說明及圖示在本質上當作說明之用,而非用以限制本案。
請參閱第2圖所示,本案提供一種晶圓結構2,包含:一晶片基板20及複數個噴墨晶片21。其中晶片基板20為一矽基材,以半導體製程製出。在具體實施例中,晶片基板20可以利用12英吋(inch)晶圓之半導體製程製出;或者,在另一具體實施例中,晶片基板20可以利用16英吋(inch)晶圓之半導體製程製出。
上述之複數個噴墨晶片21,分別以半導體製程製直接生成於晶片基板20上,並切割成至少一噴墨晶片21實施應用於上述之噴墨頭111上噴墨列印。而噴墨晶片21分別包含:複數個墨滴產生器22,以半導體製程製出生成於晶片基板20上,又如第3圖所示,每一墨滴產生器22包含一熱障層221、一加熱電阻層222、一導電層223、一保護層224、一障壁層225、一供墨腔室226及一噴孔227。
其中,熱障層221為一絕緣隔熱材料形成於晶片基板20上,絕緣隔熱材料可為場氧化物(FOX)、二氧化矽(SiO
2)、氮化矽(Si
3N
4)及磷矽玻璃(PSG)之其中之一。
加熱電阻層222為一電阻材料形成於熱障層221上,電阻材料可為多晶矽(Poly silicon)、鋁化鉭(TaAl)、鉭(Ta)、氮化鉭(TaN)、二矽化鉭(Si
2Ta)、碳(C)、碳化矽(SiC)、氧化銦錫(ITO)、氧化鋅(ZnO)、硫化鎘(CdS)、二硼化鉿(HfB
2)、鈦鎢合金(TiW)、氮化鈦(TiN)之其中之一。
導電層223為一導電材料,導電材料為鋁(Al)、鋁銅合金(AlCu)、鋁矽合金(AlSi)、金(Au)、鈀(Pd)、鈀銀合金(PdAg)、 鉑(Pt)、鋁矽銅(AlSiCu)、鈮(Nb)、釩(V)、鉿(Hf)、鈦(Ti)、鋯(Zr)、釔(Y)之其中之一。
保護層224之一部分形成於加熱電阻層222上,且保護層224之其他部分形成於導電層223上,且保護層224由在下層的第一保護層224A堆疊上層的第二保護層224B所構成,該第一保護層224A為一鈍化材料,鈍化材料為氮化矽(Si
3N
4)、二氧化矽(SiO
2)、二氧化鈦(TiO
2)、二氧化鉿(HfO
2)、二氧化鋯(ZrO
2)、五氧化二鉭(Ta
2O
5)、七氧化二錸(Re
2O
7)、五氧化二鈮(Nb
2O
5)、五氧化二鈾(U
2O
5)、三氧化鎢(WO
3)、氮氧化矽(Si
4O
5N
3)、碳化矽(SiC)之其中之一,第二保護層為一金屬材料,金屬材料為鉭(Ta)、氮化鉭(TaN)、氮化鈦(TiN)、氮化鎢(TiW)之其中之一。
障壁層225為一高分子材料形成於保護層224上,高分子材料為聚醯亞胺(POLYIMIDE)、有機塑膠材料之其中之一;而供墨腔室226及噴孔227一體成型生成於障壁層225中,且供墨腔室226底部連通保護層224,供墨腔室226頂部連通噴孔227。
上述已將墨滴產生器22內部的結構及其所使用之材料詳細揭露,而墨滴產生器22是如何在晶片基板20上實施半導體製程所製出,以下予以說明。
首先在晶片基板20上形成一層熱障層221之薄膜,之後再以濺鍍方式先後鍍上加熱電阻層222與導電層223,並以微影蝕刻之製程釐定所需尺寸,之後再以濺鍍裝置或化學氣相沉積(CVD)裝置鍍上保護層224,再以保護層224上以高分子膜壓模成型出供墨腔室226,在塗佈一層高分子膜壓模成型噴孔227,以構成障壁層225一體成型於保護層224上,如此供墨腔室226及噴孔227一體成型生成於障壁層225中,或者,在另一具體實施例上,係在保護層224上以高分子膜直接以微影蝕刻製程定義出供墨腔室226及噴孔227,如此供墨腔室226及噴孔227一體成型生成於障壁層225中,因此供墨腔室226底部連通保護層224,頂部連通噴孔227。其中晶片基板20為矽基材(SiO
2),加熱電阻層222為鋁化鉭(TaAl)材料,導電層223為鋁(Al)材料,保護層224由在下層的第一保護層224A堆疊上層的第二保護層224B所構成,第一保護層224A為氮化矽(Si
3N
4)材料,第一保護層224A為碳化矽(SiC)材料,障壁層225可以為一種高分子材料。
當然,上述噴墨晶片21之墨滴產生器22在晶片基板20上實施半導體製程所製出,在以微影蝕刻之製程釐定所需尺寸過程中,如第4A圖至第4B圖所示進一步定義出至少一供墨流道23及複數個岐流道24,再以保護層224上以乾膜壓模成型出供墨腔室226,再塗佈一層乾膜壓模成型噴孔227,如此構成如第3圖所示障壁層225一體成形於保護層224上,且供墨腔室226及噴孔227一體成型生成於障壁層225中,供墨腔室226底部連通保護層224,供墨腔室226頂部連通噴孔227,噴孔227如第4D圖所示直接裸露於噴墨晶片21表面構成需求的排列佈置,因此供墨流道23及岐流道24也是同時以半導體製程製出,其中供墨流道23可以提供一墨水,而供墨流道23連通複數個岐流道24,且複數個岐流道24連通每個墨滴產生器22之供墨腔室226。又如第4B圖所示加熱電阻層222成形裸露於供墨腔室226中,加熱電阻層222為具有一長度HL及一寬度HW所構成一矩形面積。
又請參閱第4A圖及第4C圖所示,供墨流道23為至少1個至6個。第4A圖所示單一噴墨晶片21之供墨流道23為1個,可以提供單色墨水,此單色墨水可以分別青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、黑色(K:Black)墨水。如第4C圖所示單一噴墨晶片21之供墨流道23為6個,分別提供黑色(K:Black)、青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、淺青色(LC:Light Cyan)和淡洋紅色(LM:Light Megenta)六色墨水。當然,在另外實施例中,單一噴墨晶片21之供墨流道23也可為4個,分別提供青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、黑色(K:Black)四色墨水。供墨流道23數量可依實際需求設計來佈置。
再請參閱第3圖、第4A圖、第4C圖及第5圖所示,上述導電層223在晶圓結構2上以實施半導體製程所製出,其中導電層223所連接之導體可以90奈米以下之半導體製程製出形成一噴墨控制電路,如此在噴墨控制電路區25可以佈置更多金屬氧化物半導體場效電晶體(MOSFET),去控制加熱電阻層222形成回路而激發加熱或未形成回路則不激發加熱;亦即如第5圖所示加熱電阻層222受到一施加電壓Vp時,電晶體開關Q控制加熱電阻層222接地之回路狀態,當加熱電阻層222之一端接地形成回路而激發加熱,或不接地未形成回路則不激發加熱,其中電晶體開關Q為一金屬氧化物半導體場效電晶體(MOSFET),而導電層223所連接之導體為金屬氧化物半導體場效電晶體(MOSFET)之閘極G;在其他較佳實施例中,導電層223所連接之導體為也可為一互補式金屬氧化物半導體(CMOS)之閘極G,或者導電層223所連接之導體可為一N型金屬氧化物半導體(NMOS)之閘極G。導電層223所連接之導體可依實際噴墨控制電路之需求去搭配選擇適當電晶體開關Q。當然,導電層223所連接之導體可以90~65奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以65~45奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以45~28奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以28~20奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以20~12奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以12~7奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以7~2奈米半導體製程製出形成一噴墨控制電路。可以理解的是,以越精密的半導體製程技術,其在相同的單位體積下可以製出更多組的噴墨控制電路。
由上述說可知,本案提供一種晶圓結構2包含一晶片基板20及複數個噴墨晶片21,利用半導體製程來製出晶片基板20,促使晶片基板20上可佈置更多需求數量之複數個噴墨晶片21,降低晶片基板20對於噴墨晶片21的限制,並且能夠減少晶片基板20上未使用的區域,提升晶片基板20的利用率,降低空餘率,降低製造成本,同時得以追求更高解析度與更高速列印之列印品質。
就以上述噴墨晶片21之解析度及可列印範圍(printing swath)Lp尺寸之設計,以下予以說明。
如第4D圖及第6圖所示,上述之噴墨晶片21具有一長度L及一寬度W之矩形面積,可列印範圍(printing swath)Lp,又噴墨晶片21包含複數個墨滴產生器22,以半導體製程製出生成於晶片基板20上,而噴墨晶片21配置成沿縱向延伸相鄰個墨滴產生器22保持一間距M之複數縱向軸列組(Ar1……Arn),以及配置成沿水平延伸相鄰個墨滴產生器22保持一中心階差間距P之複數水平軸行組(Ac1……Acn),亦即如第7圖所示,座標(Ar1, Ac1)墨滴產生器22與座標(Ar1, Ac2) 墨滴產生器22保持一間距M,座標(Ar1, Ac1)墨滴產生器22與座標(Ar2, Ac1)墨滴產生器22保持一中心階差間距P,而噴墨晶片21之解析度DPI(Dots Per Inch,每一英吋的點數量)即為1/中心階差間距P,因此本案為了需求更高解析度,採以解析度至少600 DPI以上之佈置設計,亦即中心階差間距P為至少1/600英吋(inch)以下。當然,本案噴墨晶片21之解析度DPI也可採以600~1200 DPI之間設計,亦即中心階差間距P為1/600英吋(inch)~1/1200英吋(inch)之間,而本案噴墨晶片21之解析度DPI最佳實例為採以720 DPI設計,亦即中心階差間距P為至少1/720英吋;或者,本案噴墨晶片21之解析度DPI也可採以1200~2400 DPI之間設計,亦即中心階差間距P為1/1200英吋(inch)~1/2400英吋(inch)之間;或者,本案噴墨晶片21之解析度DPI也可採以2400~2400 DPI之間設計,亦即中心階差間距P為至少1/2400英吋(inch)~1/24000英吋(inch)之間;或者,本案噴墨晶片21之解析度DPI也可採以24000~48000DPI之間設計,亦即中心階差間距P為至少1/24000英吋(inch)~1/48000英吋(inch)之間。
上述之噴墨晶片21在晶圓結構2上可佈置之可列印範圍(printing swath) Lp可為至少0.25英吋(inch)以上;當然,噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少0.25英吋(inch)~0.5英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少0.5英吋(inch)~0.75英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少0.75英吋(inch)~1英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少1英吋(inch)~1.25英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少1.25英吋(inch)~1.5英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少1.5英吋(inch)~2英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少2英吋(inch)~4英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少4英吋(inch)~6英吋(inch) ;噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少6英吋(inch)~8英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為至少8英吋(inch)~12英吋(inch);噴墨晶片21之可列印範圍(printing swath) Lp也可以為8.3英吋(inch),而8.3英吋(inch)即為A4紙張之頁寬尺寸,使噴墨晶片21可具備A4紙張之頁寬列印之功能;噴墨晶片21之可列印範圍(printing swath) Lp也可以為11.7英吋(inch),而11.7英吋(inch)為A3紙張之頁寬尺寸,使噴墨晶片21可具備A3紙張之頁寬列印之功能;此外,噴墨晶片21之可列印範圍(printing swath) Lp也可以為12英吋(inch)以上。噴墨晶片21在晶圓結構2上可佈置之寬度W為至少0.5毫米(㎜)~10毫米(㎜)。當然,噴墨晶片21之寬度也可以為至少0.5毫米(㎜)~4毫米(㎜);噴墨晶片21之寬度也可以為至少4毫米(㎜)~10毫米(㎜)。
本案提供一種晶圓結構2包含一晶片基板20及複數個噴墨晶片21,利用半導體製程來製出晶片基板20,促使晶片基板20上可佈置更多需求數量之複數個噴墨晶片21,而複數個噴墨晶片21因此,本案晶圓結構2所切割下來複數個噴墨晶片21,可應用於一噴墨頭111上實施噴墨列印。請參閱第7圖所示,承載系統1主要用來支撐本案之噴墨頭111結構,其中,承載系統1可包含承載架112、控制器113、第一驅動馬達116、位置控制器117、第二驅動馬達119、送紙結構120以及提供整個承載系統1運作能量的電源121。上述之承載架112主要用來容置噴墨頭111且其一端與第一驅動馬達116連接,用以帶動噴墨頭111於掃描軸115方向上沿直線軌跡移動,噴墨頭111可以是可更換地或是永久地安裝在承載架112上,而控制器113係與承載架112相連接,用以傳送控制信號至噴墨頭111上。上述之第一驅動馬達116可為一步進馬達,但不以此為限,其係根據位置控制器117所傳送的控制信號沿著掃描軸115來移動承載架112,而位置控制器117則是藉由儲存器118來確定承載架112於掃描軸115之位置,另外,位置控制器117更可用來控制第二驅動馬達119運作,以驅動噴墨媒體122,例如:紙張,與送紙結構120之間,進而使噴墨媒體122可沿進給軸114方向移動。當噴墨媒體122在列印區域(未圖示)中確定定位後,第一驅動馬達116在位置控制器117的驅動下將使承載架112及噴墨頭111在噴墨媒體122上沿掃描軸115移動而進行列印,於掃描軸115上進行一次或是多次掃描後,位置控制器117將控制第二驅動馬達119運作,以驅動噴墨媒體122與送紙結構120之間,使噴墨媒體122可沿進給軸114方向移動,以將噴墨媒體122的另一區域放置到列印區域中,而第一驅動馬達116將再帶動承載架112及噴墨頭111在噴墨媒體122上沿掃描軸115移動而進行另一行列印,一直重複到所有的列印資料都列印到噴墨媒體122上時,噴墨媒體122將被推出到噴墨印表機之輸出拖架(未圖示)上,以完成列印動作。
綜上所述,本案提供一種晶圓結構,包含一晶片基板及複數個噴墨晶片,利用半導體製程來製出該晶片基板,促使該晶片基板上可佈置更多需求數量之噴墨晶片,亦可在相同的噴墨晶片半導體製程直接生成不同可列印範圍(printing swath)尺寸之噴墨晶片,同時在以半導體製程來製出之墨滴產生器過程中,並能同時將該墨滴產生器之供墨腔室及噴孔一體成型生成於障壁層中,因此如此製出噴墨晶片之半導體製程製出過程可以佈置需求更高解析度及更高性能之列印噴墨設計,最後切割成需求實施應用於噴墨列印之噴墨晶片,達到噴墨晶片之更低製造成本,以及追求更高解析度與更高速列印之列印品質,極具產業利用性。
本案得由熟知此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲保護者。
1’:墨滴產生器
1a’:供墨腔室
11’:噴孔板
111’:噴孔
1:承載系統
111:噴墨頭
112:承載架
113:控制器
114:進給軸
115:掃描軸
116:第一驅動馬達
117:位置控制器
118:儲存器
119:第二驅動馬達
120:送紙結構
121:電源
122:噴墨媒體
2:晶圓結構
20:晶片基板
21:噴墨晶片
22:墨滴產生器
221:熱障層
222:加熱電阻層
223:導電層
224:保護層
224A:第一保護層
224B:第二保護層
225:障壁層
226:供墨腔室
227:噴孔
23:供墨流道
24:岐流道
25:噴墨控制電路區
Ac1......Acn:水平軸行組
Ar1......Arn:縱向軸列組
C:框區域
G:閘極
HL:長度
HW:寬度
L:長度
Lp:可列印範圍
M:間距
P:中心階差間距
Q:電晶體開關
Vp:電壓
W:寬度
第1圖為習知噴墨晶片之墨滴產生器剖面示意圖。
第2圖為本案晶圓結構一較佳實施例示意圖。
第3圖為本案晶圓結構上生成墨滴產生器之剖面示意圖。
第4A圖為本案晶圓結構上噴墨晶片佈置相關供墨流道、岐流道及供墨腔室等元件一較佳實施例示意圖。
第4B圖為第4A圖中C框區域之局部放大圖。
第4C圖為第4A圖中單一噴墨晶片上成形噴孔佈置排列一較佳實施例示意圖。
第4D圖為本案晶圓結構上單一噴墨晶片佈置供墨流道、導電層元件另一較佳實施例示意圖。
第5圖為本案加熱電阻層受導電層控制激發加熱之簡略電路示意圖。
第6圖為本案晶圓結構上生成墨滴產生器之佈置排列放大示意圖。
第7圖為一種適用於噴墨印表機內部之承載系統之結構示意圖。
20:晶片基板
22:墨滴產生器
221:熱障層
222:加熱電阻層
223:導電層
224:保護層
224A:第一保護層
224B:第二保護層
225:障壁層
226:供墨腔室
227:噴孔
Claims (40)
- 一種晶圓結構,包含:一晶片基板,為一矽基材;以及至少一噴墨晶片,生成於該晶片基板上,並切割成至少一該噴墨晶片實施應用於噴墨列印,其中該噴墨晶片包含:至少一供墨流道,提供列印所需墨水;以及複數個墨滴產生器,生成於該晶片基板上,分別連接該至少一供墨流道,且每一該墨滴產生器包含一熱障層、一加熱電阻層、一導電層、一保護層、一障壁層、一供墨腔室及一噴孔;其中,該熱障層為一絕緣隔熱材料形成於該晶片基板上,該加熱電阻層為一電阻材料形成於該熱障層上,該導電層為一導電材料,該導電層之一部分形成於該加熱電阻層上,該保護層之一部分形成於該加熱電阻層上,該保護層之其他部分形成於該導電層上,而該障壁層為一高分子材料形成於該保護層上,且該供墨腔室及該噴孔一體成型於該障壁層中,且該供墨腔室底部連通該保護層,該供墨腔室頂部連通該噴孔;其中,該障壁層包含兩個方向相反的內部側壁用以定義出該墨滴產生器,該障壁層的該內部側壁在與該墨滴產生器底部垂直的方向上重疊於該導電層上,而該保護層的連續部分的頂部表面即為該墨滴產生器的底部;其中,在該墨滴產生器的至少一供墨流道和該供墨腔室之間形成一墨水供應路徑,且該墨水供應路徑被配置在與該供墨腔室底部平行的平面,藉此向該供墨腔室供應墨水。
- 如請求項1所述之晶圓結構,其中該絕緣隔熱材料為場氧化物(FOX)、二氧化矽(SiO2)、氮化矽(Si3N4)及磷矽玻璃(PSG)之其中 之一。
- 如請求項1所述之晶圓結構,其中該電阻材料為多晶矽(Polysilicon)、鋁化鉭(TaAl)、鉭(Ta)、氮化鉭(TaN)、二矽化鉭(Si2Ta)、碳(C)、碳化矽(SiC)、氧化銦錫(ITO)、氧化鋅(ZnO)、硫化鎘(CdS)、二硼化鉿(HfB2)、鈦鎢合金(TiW)、氮化鈦(TiN)之其中之一。
- 如請求項1所述之晶圓結構,其中該導電材料為鋁(Al)、鋁銅合金(AlCu)、鋁矽合金(AlSi)、金(Au)、鈀(Pd)、鈀銀合金(PdAg)、鉑(Pt)、鋁矽銅(AlSiCu)、鈮(Nb)、釩(V)、鉿(Hf)、鈦(Ti)、鋯(Zr)、釔(Y)之其中之一。
- 如請求項1所述之晶圓結構,其中該保護層由在下層的一第一保護層堆疊上層的一第二保護層所構成。
- 如請求項5所述之晶圓結構,其中該第一保護層為一鈍化材料,該鈍化材料為氮化矽(Si3N4)、二氧化矽(SiO2)、二氧化鈦(TiO2)、二氧化鉿(HfO2)、二氧化鋯(ZrO2)、五氧化二鉭(Ta2O5)、七氧化二錸(Re2O7)、五氧化二鈮(Nb2O5)、五氧化二鈾(U2O5)、三氧化鎢(WO3)、氮氧化矽(Si4O5N3)、碳化矽(SiC)之其中之一。
- 如請求項5所述之晶圓結構,其中該第二保護層為一金屬材料,該金屬材料為鉭(Ta)、氮化鉭(TaN)、氮化鈦(TiN)、氮化鎢(TiW)之其中之一。
- 如請求項1所述之晶圓結構,其中該高分子材料為聚醯亞胺(POLYIMIDE)、有機塑膠材料之其中之一。
- 如請求項1所述之晶圓結構,其中該噴墨晶片包含複數個岐流道以半導體製程製出,其中該供墨流道連通複數個該岐流道,且複數個該岐流道連通每個墨滴產生器之該供墨腔室。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以90奈 米以下之半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以90~65奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以65~45奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以45~28奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以28~20奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以20~12奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以12~7奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體以7~2奈米半導體製程製出形成一噴墨控制電路。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體為金屬氧化物半導體場效電晶體之一閘極。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體為互補式金屬氧化物半導體之一閘極。
- 如請求項1所述之晶圓結構,其中該導電層所連接之導體為N型金屬氧化物半導體之一閘極。
- 如請求項9所述之晶圓結構,其中該供墨流道為至少1個至6個。
- 如請求項21所述之晶圓結構,其中該供墨流道為1個,提供單色墨水。
- 如請求項21所述之晶圓結構,其中該供墨流道為4個,分別提供 青色、洋紅色、黃色、黑色,共四色墨水。
- 如請求項21所述之晶圓結構,其中該供墨流道為6個,分別提供黑色、青色、洋紅色、黃色、淺青色和淡洋紅色,共六色墨水。
- 如請求項1所述之晶圓結構,其中該噴墨晶片之一可列印範圍為至少0.25英吋以上,該噴墨晶片之一寬度為0.5毫米~10毫米。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少0.25英吋~0.5英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少0.5英吋~0.75英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少0.75英吋~1英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少1英吋~1.25英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少1.25英吋~1.5英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少1.5英吋~2英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少2英吋~4英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少4英吋~6英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少6英吋~8英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少8英吋~12英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為至少12英吋以上。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為8.3英吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該可列印範圍為11.7吋。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該寬度為至少0.5毫米~4毫米。
- 如請求項25所述之晶圓結構,其中該噴墨晶片之該寬度為至少4毫米~10毫米。
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