TWI784341B - 晶圓結構 - Google Patents
晶圓結構 Download PDFInfo
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- TWI784341B TWI784341B TW109138191A TW109138191A TWI784341B TW I784341 B TWI784341 B TW I784341B TW 109138191 A TW109138191 A TW 109138191A TW 109138191 A TW109138191 A TW 109138191A TW I784341 B TWI784341 B TW I784341B
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- 238000007639 printing Methods 0.000 claims abstract description 82
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000007641 inkjet printing Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 83
- 239000004020 conductor Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000011241 protective layer Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000000976 ink Substances 0.000 claims 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 87
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000748 compression moulding Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000951 Aluminide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Abstract
一種晶圓結構,包含晶片基板及複數個噴墨晶片。晶片基板為矽基材,以至少12英吋以上晶圓之半導體製程製出。複數個噴墨晶片包含至少一第一噴墨晶片及至少一第二噴墨晶片,分別以半導體製程製直接生成於晶片基板上,並切割成至少一第一噴墨晶片及至少一第二噴墨晶片實施應用於噴墨列印。
Description
本案關於一種晶圓結構,尤指以半導體製程製出適用於噴墨列印之噴墨晶片之晶圓結構。
目前市面上常見的印表機除雷射印表機外,噴墨印表機是另一種被廣泛使用的機種,其具有價格低廉、操作容易以及低噪音等優點,且可列印於如紙張、相片紙等多種噴墨媒體。而噴墨印表機之列印品質主要取決於墨水匣的設計等因素,尤其以噴墨晶片釋出墨滴至噴墨媒體之設計為墨水匣設計的重要考量因素。
又在噴墨晶片在追求更高的高解析度與更高速列印之列印品質要求下,對於競爭激烈的噴墨列印市場中,噴墨印表機的售價下降得很快速,因此搭配墨水匣之噴墨晶片之製造成本以及更高解析度與更高速列印之設計成本就會取決於市場競爭力之關鍵因素。
但,以目前噴墨列印市場中所生產噴墨晶片係由一晶圓結構以半導體製程所製出,現階段噴墨晶片生產皆以6吋以下晶圓結構所製出,又要同時追求更高的高解析度與更高速列印之列印品質要求下,相對噴墨晶片之可列印範圍(printing swath)之設計要變更大、更長,始可大幅提高列印速度,如此噴墨晶片所需求整體面積就更大,因此要在6吋以下有限面積之晶圓結構上製出需求噴墨晶片數量就會相當地受到限制,進而製造成本也無法有效地降低。
舉例說明,例如,一片6吋以下晶圓結構製出噴墨晶片之可列印範圍(printing swath)為0.56英吋(inch)大概至多切割生成334顆噴墨晶片。若在一片6吋以下晶圓結構上生成噴墨晶片之可列印範圍(printing swath)超過1英吋(inch)或者頁寬可列印範圍(printing swath)A4尺寸(8.3英吋(inch))來製出更高的高解析度與更高速列印之列印品質要求下,相對要在6吋以下有限面積之晶圓結構上製出需求噴墨晶片數量就會相當的受到限制,數量更少,在6吋以下有限面積之晶圓結構上製出需求噴墨晶片就會有浪費剩餘之空白面積,這些空百面積就會佔去整片晶圓面積的空餘率超過20%以上,相當浪費,進而製造成本也無法有效地降低。
有鑑於此,要如何符合噴墨列印市場中追求噴墨晶片之更低製造成本,以及追求更高解析度與更高速列印之列印品質,是本案最主要研發之主要課題。
本案之主要目的係提供一種晶圓結構,包含一晶片基板及複數個噴墨晶片,利用至少12英吋以上晶圓之半導體製程來製出該晶片基板,促使該晶片基板上可佈置更多需求數量之噴墨晶片,也在相同的噴墨晶片半導體製程直接生成不同可列印範圍(printing swath)尺寸之第一噴墨晶片及第二噴墨晶片,並佈置需求更高解析度及更高性能之列印噴墨設計,以切割成需求實施應用於噴墨列印之第一噴墨晶片及第二噴墨晶片,達到噴墨晶片之更低製造成本,以及追求更高解析度與更高速列印之列印品質。
本案之一廣義實施態樣為提供一種晶圓結構,包含晶片基板及複數個個噴墨晶片。晶片基板為矽基材,以至少12英吋以上晶圓之半導體製程製出。複數個噴墨晶片包含至少一第一噴墨晶片及至少一第二噴墨
晶片,分別以半導體製程製直接生成於晶片基板上,並切割成至少一第一噴墨晶片及至少一第二噴墨晶片實施應用於噴墨列印。
1:承載系統
111:噴墨頭
112:承載架
113:控制器
114:進給軸
115:掃描軸
116:第一驅動馬達
117:位置控制器
118:儲存器
119:第二驅動馬達
120:送紙結構
121:電源
122:噴墨媒體
2:晶圓結構
20:晶片基板
21:噴墨晶片
21A:第一噴墨晶片
21B:第二噴墨晶片
22:墨滴產生器
221:熱障層
222:加熱電阻層
223:導電層
224:保護層
224A:第一層保護層
224B:第二層保護層
225:障壁層
226:供墨腔室
227:噴孔
23:供墨流道
24:岐流道
25:噴墨控制電路區
L、HL:長度
W、HW:寬度
Lp:可列印範圍
Ar1....Arn:從向軸列組
Ac1....Acn:水平軸行組
M:間距
P:中心階差間距
Vp:電壓
Q:電晶體開關
G:閘極
第1圖為本案晶圓結構一較佳實施例示意圖。
第2圖為本案晶圓結構上生成墨滴產生器之剖面示意圖。
第3A圖為本案晶圓結構上噴墨晶片佈置相關供墨流道、岐流道及供墨腔室等元件一較佳實施例示意圖。
第3B圖為第3A圖中C框區域之局部放大圖。
第3C圖為本案晶圓結構上單一噴墨晶片佈置供墨流道、導電層元件另一較佳實施例示意圖。
第3D圖為第3A圖中單一噴墨晶片上成形噴孔佈置排列一較佳實施例示意圖。
第4圖為本案加熱電阻層受導電層控制激發加熱之簡略電路示意圖。
第5圖為本案晶圓結構上生成墨滴產生器之佈置排列放大示意圖。
第6圖為一種適用於噴墨印表機內部之承載系統之結構示意圖。
體現本案特徵與優點的實施例將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化,其皆不脫離本案的範圍,且其中的說明及圖示在本質上當作說明之用,而非用以限制本案。
請參閱第1圖所示,本案提供一種晶圓結構2,包含:一晶片基板20及複數個噴墨晶片21。其中晶片基板20為一矽基材,以至少12英吋(inch)以上晶圓之半導體製程製出。在具體實施例中,晶片基板20可以利用12英吋(inch)晶圓之半導體製程製出;或者,在另一具體實施例中,晶片基板20可以利用16英吋(inch)晶圓之半導體製程製出。
上述之複數個噴墨晶片21,包含至少一第一噴墨晶片21A及至少一第二噴墨晶片21B以半導體製程製直接生成於晶片基板20上,並切割成至少一第一噴墨晶片21A及至少一第二噴墨晶片21B實施應用於上述之噴墨頭111上噴墨列印。而第一噴墨晶片21A及第二噴墨晶片21B分別包含:複數個墨滴產生器22,以半導體製程製出生成於晶片基板20上,又如第2圖所示,每一墨滴產生器22包含一熱障層221、一加熱電阻層222、一導電層223、一保護層224、一障壁層225、一供墨腔室226及一噴孔227。其中熱障層221形成於晶片基板20上,加熱電阻層222形成於熱障層221上,而導電層223及保護層224之一部分形成於加熱電阻層222,且保護層224之其他部分形成於導電層223上,而障壁層225形成於保護層224上,以及供墨腔室226及噴孔227一體成型生成於障壁層225中,且供墨腔室226底部連通保護層224,供墨腔室226頂部連通噴孔227。亦即噴墨晶片21之墨滴產生器22是在晶片基板20上實施半導體製程所製出,以下予以說明。首先在晶片基板20上形成一層熱障層221之薄膜,之後再以濺鍍方式先後鍍上加熱電阻層222與導電層223,並以微影蝕刻之製程釐定所需尺寸,之後再以濺鍍裝置或化學氣相沉積(CVD)裝置鍍上保護層224,再以保護層224上以乾膜壓模成型出供墨腔室226,再塗佈一層乾膜壓模成型噴孔227,構成障壁層225一體成形於保護層224上,如此供墨腔室226及噴孔227一體成型生成於障壁層225中,或者,在另一具體實施例上,係在保護層224上以高分子膜直接以微影蝕刻製程定義出供墨腔室226及噴孔227,如此供墨腔室226及噴孔227一體成型生成於障壁層225中,因此供墨腔室226底部連通保護層224,頂部連通噴孔227。其中晶片基板20為矽基材(SiO2),加熱電阻層222為鋁化鉭(TaAl)材料,導電層223為鋁(Al)材料,保護層224由在下
層的第一層保護層224A堆疊上層的第二層保護層224B所構成,第一層保護層224A可為氮化矽(Si3N4)材料或碳化矽(SiC)材料,障壁層225可以為一種高分子材料。
當然,上述噴墨晶片21之墨滴產生器22在晶片基板20上實施半導體製程所製出,在以微影蝕刻之製程釐定所需尺寸過程中,如第3A圖至第B圖所示進一步定義出至少一供墨流道23及複數個岐流道24,再以保護層224上以乾膜壓模成型出供墨腔室226,再塗佈一層乾膜壓模成型噴孔227,如此構成如第2圖所示障壁層225一體成形於保護層224上,且供墨腔室226及噴孔227一體成型生成於障壁層225中,供墨腔室226底部連通保護層224,供墨腔室226頂部連通噴孔227,噴孔227如第3D圖所示直接裸露於噴墨晶片21表面構成需求的排列佈置,因此供墨流道23及岐流道24也是同時以半導體製程製出,其中供墨流道23可以提供一墨水,而供墨流道23連通複數個岐流道24,且複數個岐流道24連通每個墨滴產生器22之供墨腔室226。又如第3B圖所示加熱電阻層222成形裸露於供墨腔室226中,加熱電阻層為具有一長度HL及一寬度HW所構成一矩形面積。
又請參閱第3A圖及第3C圖所示,供墨流道23為1個至6個。第3A圖所示單一噴墨晶片21之供墨流道23為1個,可以提供單色墨水,此單色墨水可以分別青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、黑色(K:Black)墨水。如第3C圖所示單一噴墨晶片21之供墨流道23為6個,分別提供黑色(K:Black)、青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、淺青色(LC:Light Cyan)和淡洋紅色(LM:Light Megenta)六色墨水。當然,在另外實施例中,單一噴墨晶片21之供墨流道23也可為4個,分別提供青色(C:Cyan)、洋紅色(M:Megenta)、黃
色(Y:Yellow)、黑色(K:Black)四色墨水。供墨流道23數量可依實際需求設計來佈置。
再請參閱第3A圖、第3C圖及第4圖所示,上述導電層223係於晶圓結構2上實施半導體製程所製出,其中導電層223所連接之導體可以至少90奈米以下之半導體製程製出形成一噴墨控制電路,如此在噴墨控制電路區25可以佈置更多金屬氧化物半導體場效電晶體(MOSFET)去控制加熱電阻層222形成回路而激發加熱或未形成回路則不激發加熱;亦即如第4圖所示加熱電阻層222受到一施加電壓Vp時,電晶體開關Q控制加熱電阻層222接地之回路狀態,當加熱電阻層222之一端接地形成回路而激發加熱,或未形成回路則不接地不激發加熱,其中電晶體開關Q為一金屬氧化物半導體場效電晶體(MOSFET),而導電層223所連接之導體為金屬氧化物半導體場效電晶體(MOSFET)之閘極G;在其他較佳實施例中,導電層223所連接之導體為也可為一互補式金屬氧化物半導體(CMOS)之閘極G,或者導電層223所連接之導體可為一N型金屬氧化物半導體(NMOS)之閘極G。導電層223所連接之導體可依實際噴墨控制電路之需求去搭配選擇適當電晶體開關Q。當然,導電層223所連接之導體可以65奈米至90奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以45奈米至65奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以28奈米至45奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以20奈米至28奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以12奈米至20奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以7奈米至12奈米半導體製程製出形成一噴墨控制電路;導電層223所連接之導體可以2奈米至7奈米半導體製程製出形成一噴墨控
制電路。可以理解的是,以越精密的半導體製程技術,其在相同的單位體積下可以製出更多組的噴墨控制電路。
由上述說可知,本案提供一種晶圓結構2包含一晶片基板20及複數個噴墨晶片21,利用至少12英吋(inch)以上晶圓之半導體製程來製出晶片基板20,促使晶片基板20上可佈置更多需求數量之複數個噴墨晶片21,而複數個噴墨晶片21包含至少一第一噴墨晶片21A及至少一第二噴墨晶片21B以半導體製程製直接生成於晶片基板20上,並切割成至少一第一噴墨晶片21A及至少一第二噴墨晶片21B實施應用於噴墨列印,如此在相同的噴墨晶片半導體製程直接生成不同可列印範圍(printing swath)尺寸之第一噴墨晶片21A及第二噴墨晶片21B,如第1圖所示,當晶圓結構2利用至少12英吋(inch)以上晶圓之半導體製程來製出晶片基板20,先佈置需求數量之第二噴墨晶片21B後,剩餘空白面積即可去佈置比較小可列印範圍(printing swath)尺寸之第一噴墨晶片21A,這些空白面積就不會浪費,進而在同一晶圓結構2上在相同的噴墨晶片半導體製程直接生成不同可列印範圍(printing swath)尺寸之第一噴墨晶片21A及第二噴墨晶片21B之製造成本即可有效降低,並且利用這些第一噴墨晶片21A及第二噴墨晶片21B佈置需求更高解析度及更高性能之列印噴墨設計。
就以上述第一噴墨晶片21A及第二噴墨晶片21B之解析度及可列印範圍(printing swath)尺寸之設計,以下予以說明。
如第3D圖及第5圖所示,上述噴墨晶片21之第一噴墨晶片21A及第二噴墨晶片21B分別具有一長度L及一寬度W之矩形面積,可列印範圍(printing swath)Lp,又噴墨晶片21之第一噴墨晶片21A及第二噴墨晶片21B分別包含複數個墨滴產生器22,以半導體製程製出生成於晶片基板
20上,而噴墨晶片21之第一噴墨晶片21A及第二噴墨晶片21B配置成沿縱向延伸相鄰個墨滴產生器22保持一間距M之複數縱向軸列組(Ar1......Arn),以及配置成沿水平延伸相鄰個墨滴產生器22保持一中心階差間距P之複數水平軸行組(Ac1......Acn),亦即如第5圖所示,座標(Ar1,Ac1)墨滴產生器22與座標(Ar1,Ac2)墨滴產生器22保持一間距M,座標(Ar1,Ac1)墨滴產生器22與座標(Ar2,Ac1)墨滴產生器22保持一中心階差間距P,而噴墨晶片21之解析度DPI(Dots Per Inch,每一英吋的點數量)即為1/中心階差間距P,因此本案為了需求更高解析度,採以解析度至少600DPI以上之佈置設計,亦即中心階差間距P為至少1/600英吋(inch)以下。當然,本案噴墨晶片21之解析度DPI也可採以至少600DPI至1200DPI設計,亦即中心階差間距P為至少1/600英吋(inch)至1/1200英吋(inch),而本案噴墨晶片21之解析度DPI最佳實例為採以720英吋DPI設計,亦即中心階差間距為至少1/720英吋(inch);或者,本案噴墨晶片21之解析度DPI也可採以至少1200DPI至2400DPI設計,亦即中心階差間距為至少1/1200英吋(inch)至1/2400英吋(inch);或者,本案噴墨晶片21之解析度DPI也可採以至少2400DPI至2400DPI設計,亦即中心階差間距為至少1/2400英吋(inch)至1/24000英吋(inch);或者,本案噴墨晶片21之解析度DPI也可採以至少24000DPI至48000DPI設計,亦即中心階差間距為至少1/24000英吋(inch)至1/48000英吋(inch)。
上述之第一噴墨晶片21A在晶圓結構2上可佈置之可列印範圍(printing swath)Lp可為至少0.25英吋(inch)至1.5英吋(inch);當然,第一噴墨晶片21A之可列印範圍(printing swath)Lp也可以為至少0.25英吋(inch)至0.5英吋(inch);第一噴墨晶片21A之可列印範圍(printing swath)Lp也可以為至少0.5英吋(inch)至0.75英吋(inch);第一噴墨晶片21A之可列印範圍
(printing swath)Lp也可以為至少0.75英吋(inch)至1英吋(inch);第一噴墨晶片21A之可列印範圍(printing swath)Lp也可以為至少1英吋(inch)至1.25英吋(inch);第一噴墨晶片21A之可列印範圍(printing swath)Lp也可以為至少1.25英吋(inch)至1.5英吋(inch)。第一噴墨晶片21A在晶圓結構2上可佈置之寬度W為至少0.5毫米(mm)至10毫米(mm)。當然,第一噴墨晶片21A之寬度也可以為至少0.5毫米(mm)至4毫米(mm);第一噴墨晶片21A之寬度也可以為至少4毫米(mm)至10毫米(mm)。
上述之第二噴墨晶片21B在晶圓結構2上可佈置所構成長度可涵蓋一列印媒介寬度構成頁寬列印,且第二噴墨晶片21B具有一可列印範圍(printing swath)Lp為至少1.5英吋(inch)以上;當然,第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為8.3英吋(inch),第二噴墨晶片21B噴印於列印媒介寬度之頁寬列印範圍為8.3英吋(inch)(A4尺寸);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為11.7英吋(inch),第二噴墨晶片21B噴印於列印媒介寬度之頁寬列印範圍為11.7英吋(inch)(A3尺寸);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為至少1.5英吋(inch)至2英吋(inch),第二噴墨晶片21B噴印於該列印媒介寬度之頁寬列印範圍為至少1.5英吋(inch)至2英吋(inch);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為至少2英吋(inch)至4英吋(inch),第二噴墨晶片21B噴印於該列印媒介寬度之頁寬列印範圍為2英吋(inch)至4英吋(inch);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為至少4英吋(inch)至6英吋(inch),第二噴墨晶片21B噴印於該列印媒介寬度之頁寬列印範圍為4英吋(inch)至6英吋(inch);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為至少6英吋(inch)至8英吋(inch),第二噴墨晶片21B噴印於列印媒介寬度之頁
寬列印範圍為6英吋(inch)至8英吋(inch);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為至少8英吋(inch)至12英吋(inch),第二噴墨晶片21B噴印於列印媒介寬度之頁寬列印範圍為8英吋(inch)至12英吋(inch);第二噴墨晶片21B之可列印範圍(printing swath)Lp也可以為至少12英吋(inch)以上,第二噴墨晶片21B噴印於列印媒介寬度之頁寬列印範圍為12英吋(inch)以上。
上述之第二噴墨晶片21B在晶圓結構2上可佈置之寬度W為至少0.5毫米(mm)至10毫米(mm)。當然,第二噴墨晶片21B之寬度也可以為至少0.5毫米(mm)至4毫米(mm);第二噴墨晶片21B之寬度也可以為至少4毫米(mm)至10毫米(mm)。
本案提供一種晶圓結構2包含一晶片基板20及複數個噴墨晶片21,利用至少12英吋(inch)以上晶圓之半導體製程來製出晶片基板20,促使晶片基板21上可佈置更多需求數量之複數個噴墨晶片21,而複數個噴墨晶片21包含至少一第一噴墨晶片21A及至少一第二噴墨晶片21B以半導體製程製直接生成於晶片基板20上,並切割成至少一第一噴墨晶片21A及至少一第二噴墨晶片21B實施應用於噴墨列印,因此,本案晶圓結構2所切割下來複數個噴墨晶片21,不論第一噴墨晶片21A及第二噴墨晶片21B之噴墨晶片21,可應用於一噴墨頭111上實施噴墨列印。以下就作以說明,請參閱第6圖所示,承載系統1主要用來支撐本案之噴墨頭111結構,其中,承載系統1可包含承載架112、控制器113、第一驅動馬達116、位置控制器117、第二驅動馬達119、送紙結構120以及提供整個承載系統1運作能量的電源121。上述之承載架112主要用來容置噴墨頭111且其一端與第一驅動馬達116連接,用以帶動噴墨頭111於掃描軸115方向上沿直線軌跡移動,噴墨頭111可以是可更換地或是永久地
安裝在承載架112上,而控制器113係與承載架112相連接,用以傳送控制信號至噴墨頭111上。上述之第一驅動馬達116可為一步進馬達,但不以此為限,其係根據位置控制器117所傳送的控制信號沿著掃描軸115來移動承載架112,而位置控制器117則是藉由儲存器118來確定承載架112於掃描軸115之位置,另外,位置控制器117更可用來控制第二驅動馬達119運作,以驅動噴墨媒體122,例如:紙張,與送紙結構120之間,進而使噴墨媒體122可沿進給軸114方向移動。當噴墨媒體122在列印區域(未圖示)中確定定位後,第一驅動馬達116在位置控制器117的驅動下將使承載架112及噴墨頭111在噴墨媒體122上沿掃描軸115移動而進行列印,於掃描軸115上進行一次或是多次掃描後,位置控制器117將控制第二驅動馬達119運作,以驅動噴墨媒體122與送紙結構120之間,使噴墨媒體122可沿進給軸114方向移動,以將噴墨媒體122的另一區域放置到列印區域中,而第一驅動馬達116將再帶動承載架112及噴墨頭111在噴墨媒體122上沿掃描軸115移動而進行另一行列印,一直重複到所有的列印資料都列印到噴墨媒體122上時,噴墨媒體122將被推出到噴墨印表機之輸出拖架(未圖示)上,以完成列印動作。
綜上所述,本案提供一種晶圓結構,包含一晶片基板及複數個噴墨晶片,利用至少12英吋(inch)以上晶圓之半導體製程來製出該晶片基板,促使該晶片基板上可佈置更多需求數量之噴墨晶片,也在相同的噴墨晶片半導體製程直接生成不同可列印範圍(printing swath)尺寸之第一噴墨晶片及第二噴墨晶片,並佈置需求更高解析度及更高性能之列印噴墨設計,以切割成需求實施應用於噴墨列印之第一噴墨晶片及第二噴墨晶片,達到噴墨晶片之更低製造成本,以及追求更高解析度與更高速列印之列印品質,極具產業利用性。
本案得由熟知此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲保護者。
2:晶圓結構
20:晶片基板
21:噴墨晶片
21A:第一噴墨晶片
21B:第二噴墨晶片
Claims (41)
- 一種晶圓結構,包含:一晶片基板,為一矽基材,以至少12英吋以上晶圓之半導體製程製出;以及複數個噴墨晶片,包含至少一第一噴墨晶片及至少一第二噴墨晶片,分別以半導體製程製直接生成於該晶片基板上,並切割成該至少一第一噴墨晶片及該至少一第二噴墨晶片實施應用於噴墨列印,其中該第一噴墨晶片及該第二噴墨晶片為不同的可列印範圍尺寸,其中先佈置需求數量之該第二噴墨晶片後,剩餘空白面積佈置比較小可列印範圍尺寸之該第一噴墨晶片。
- 如請求項1所述之晶圓結構,其中該晶片基板以12英吋晶圓之半導體製程製出。
- 如請求項1所述之晶圓結構,其中該晶片基板以16英吋晶圓之半導體製程製出。
- 如請求項1所述之晶圓結構,其中該第一噴墨晶片及第二噴墨晶片分別包含:複數個墨滴產生器,以半導體製程製出生成於該晶片基板上,且每一該墨滴產生器包含一熱障層、一加熱電阻層、一導電層、一保護層、一障壁層、一供墨腔室及一噴孔。
- 如請求項4所述之晶圓結構,其中該熱障層形成於該晶片基板上,該加熱電阻層形成於該熱障層上,而該導電層及該保護層之一部分形成於該加熱電阻層上,且該保護層之其他部分形成於該導電層上,而該障壁層形成於該保護層上,以及該供墨腔室及該噴孔一體成型生成於該障壁層中,且該供墨腔室底部連通該保護層,該供墨腔室頂部連通該噴孔。
- 如請求項4所述之晶圓結構,其中該噴墨晶片包含至少一供墨流道及複數個岐流道以半導體製程製出,其中該供墨流道提供一墨水,以及該供墨流道連通複數個該岐流道,且複數個該岐流道連通每個墨滴產生器之該供墨腔室。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以90奈米以下之半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以65奈米至90奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以45奈米至65奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以28奈米至45奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以20奈米至28奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以12奈米至20奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以7奈米至12奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體以2奈米至7奈米半導體製程製出形成一噴墨控制電路。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體為金屬氧化物半導體場效電晶體之閘極。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體為互補式金屬氧化物半導體之閘極。
- 如請求項4所述之晶圓結構,其中該導電層所連接之導體為N型金 屬氧化物半導體之閘極。
- 如請求項6所述之晶圓結構,其中該供墨流道為1個至6個。
- 如請求項18所述之晶圓結構,其中該供墨流道為1個,提供單色墨水。
- 如請求項18所述之晶圓結構,其中該供墨流道為4個,分別提供青色、洋紅色、黃色及黑色四色墨水。
- 如請求項18所述之晶圓結構,其中該供墨流道為6個,分別提供黑色、青色、洋紅色、黃色、淺青色和淡洋紅色等六色墨水。
- 如請求項1所述之晶圓結構,其中該第一噴墨晶片之可列印範圍為至少0.25英吋至1.5英吋,該第一噴墨晶片之寬度為至少0.5毫米至10毫米。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之可列印範圍為至少0.25英吋至0.5英吋。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之可列印範圍為至少0.5英吋至0.75英吋。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之可列印範圍為至少0.75英吋至1英吋。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之可列印範圍為至少1英吋至1.25英吋。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之可列印範圍為至少1.25英吋至1.5英吋。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之寬度為至少0.5毫米至4毫米。
- 如請求項22所述之晶圓結構,其中該第一噴墨晶片之寬度為至少4毫米至10毫米。
- 如請求項1所述之晶圓結構,其中該第二噴墨晶片之寬度為至少0.5毫米至10毫米。
- 如請求項30所述之晶圓結構,其中該第二噴墨晶片之寬度為至少0.5毫米至4毫米。
- 如請求項30所述之晶圓結構,其中該第二噴墨晶片之寬度為至少4毫米至10毫米。
- 如請求項1所述之晶圓結構,其中該第二噴墨晶片所構成長度可涵蓋一列印媒介寬度構成頁寬列印,且該第二噴墨晶片具有一可列印範圍為至少1.5英吋以上。
- 如請求項33所述之晶圓結構,其中第二噴墨晶片之可列印範圍為8.3英吋,以及該第二噴墨晶片噴印於該列印媒介寬度之頁寬列印範圍為8.3英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍為11.7英吋,以及該第二噴墨晶片噴印於該列印媒介寬度之頁寬列印範圍為11.7英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍為至少1.5英吋至2英吋,而該第二噴墨晶片噴印於該列印媒介寬度之該頁寬列印範圍為至少1.5英吋至2英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍為至少2英吋至4英吋,以及該第二噴墨晶片噴印於該列印媒介寬度之該頁寬列印範圍為2英吋至4英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍為至少4英吋至6英吋,以及該第二噴墨晶片噴印於該列印媒介寬度之該頁寬列印範圍為4英吋至6英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍 為至少6英吋至8英吋,以及該第二噴墨晶片噴印於該列印媒介寬度之該頁寬列印範圍為6英吋至8英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍為至少8英吋至12英吋,以及該第二噴墨晶片噴印於該列印媒介寬度之該頁寬列印範圍為8英吋至12英吋。
- 如請求項33所述之晶圓結構,其中該第二噴墨晶片之可列印範圍為至少12英吋以上,以及該第二噴墨晶片噴印於該列印媒介寬度之該頁寬列印範圍為12英吋以上。
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TW201827244A (zh) * | 2016-10-19 | 2018-08-01 | 瑞士商西克帕控股有限公司 | 形成熱噴墨印刷頭的方法、熱噴墨印刷頭及半導體晶圓 |
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