TW200707526A - CMOS compatible piezo-inkjet head - Google Patents

CMOS compatible piezo-inkjet head

Info

Publication number
TW200707526A
TW200707526A TW094126779A TW94126779A TW200707526A TW 200707526 A TW200707526 A TW 200707526A TW 094126779 A TW094126779 A TW 094126779A TW 94126779 A TW94126779 A TW 94126779A TW 200707526 A TW200707526 A TW 200707526A
Authority
TW
Taiwan
Prior art keywords
nanojet
wafer
hole
design
silicon
Prior art date
Application number
TW094126779A
Other languages
Chinese (zh)
Other versions
TWI283890B (en
Inventor
Jung-Tang Huang
Chung-Han Wu
Shuo-Hung Chang
Original Assignee
Chien Hui Chuan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chien Hui Chuan filed Critical Chien Hui Chuan
Priority to TW94126779A priority Critical patent/TWI283890B/en
Publication of TW200707526A publication Critical patent/TW200707526A/en
Application granted granted Critical
Publication of TWI283890B publication Critical patent/TWI283890B/en

Links

Landscapes

  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

This invention disclosed a method to manufacture the nano inkjet head using wafer-level fabrication process. Design by using CMOS process technology on the wafer to make nanojet hole, cavities, refill-proof design of the micro-channel, inlet, and driving wave generator circuits on the same side of the wafer. The devise we called E-TYPE design. First use CMOS process to fabricate metal layers, and oxide layers. Then dry-etch away silicon-dioxide and silicon to get nanojet hole, the refill-proof designed micro-channel, and cavities by MEMS process. Sputter non-wettable material around the nanojet hole to help nanosize-liquid ejection easily. Finally, align and bond nickel vibration membrane and piezoelectric thick film on the said silicon wafer to get the complete PZT nano-inkjet print head structure. Furthermore, the driving wave generator circuits can be designed simultaneously with the said nanojet. Thus, a system-on-chip package nanojet print head can be obtained. Also note that SCREAM (Single Crystal Reactive Etching and Metallization) process can be employed to fabricate the nanojet in E-TYPE design.
TW94126779A 2005-08-08 2005-08-08 CMOS compatible piezo-inkjet head TWI283890B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94126779A TWI283890B (en) 2005-08-08 2005-08-08 CMOS compatible piezo-inkjet head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94126779A TWI283890B (en) 2005-08-08 2005-08-08 CMOS compatible piezo-inkjet head

Publications (2)

Publication Number Publication Date
TW200707526A true TW200707526A (en) 2007-02-16
TWI283890B TWI283890B (en) 2007-07-11

Family

ID=39430912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94126779A TWI283890B (en) 2005-08-08 2005-08-08 CMOS compatible piezo-inkjet head

Country Status (1)

Country Link
TW (1) TWI283890B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102320558A (en) * 2011-09-13 2012-01-18 上海先进半导体制造股份有限公司 Manufacturing method for cavity of full silica-based microfluidic device
CN110998818A (en) * 2017-08-07 2020-04-10 应用材料公司 Process margin expansion using coated parts in plasma etch processes
TWI760912B (en) * 2020-11-03 2022-04-11 研能科技股份有限公司 Wafer structure
TWI768529B (en) * 2020-11-03 2022-06-21 研能科技股份有限公司 Wafer structure
TWI784341B (en) * 2020-11-03 2022-11-21 研能科技股份有限公司 Wafer structure
TWI790504B (en) * 2020-11-24 2023-01-21 研能科技股份有限公司 Wafer structure
US11718094B2 (en) 2020-11-03 2023-08-08 Microjet Technology Co., Ltd. Wafer structure
US11738556B2 (en) 2020-11-24 2023-08-29 Microjet Technology Co., Ltd. Wafer structure

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112013031746B1 (en) * 2011-06-29 2020-10-20 Hewlett-Packard Development Company, L.P stack of piezoelectric inkjet inserts and piezoelectric printhead
TWI661184B (en) * 2017-04-19 2019-06-01 天亮醫療器材股份有限公司 Detection apparatus and inlet structure thereof
EP4298951A1 (en) 2018-06-13 2024-01-03 Samsonite IP Holdings S.ÀR.L. Luggage article split along front and rear major faces

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102320558B (en) * 2011-09-13 2014-03-26 上海先进半导体制造股份有限公司 Manufacturing method for cavity of full silica-based microfluidic device
CN102320558A (en) * 2011-09-13 2012-01-18 上海先进半导体制造股份有限公司 Manufacturing method for cavity of full silica-based microfluidic device
CN110998818B (en) * 2017-08-07 2023-08-01 应用材料公司 Process margin extension using coated parts in plasma etching process
CN110998818A (en) * 2017-08-07 2020-04-10 应用材料公司 Process margin expansion using coated parts in plasma etch processes
US11712890B2 (en) 2020-11-03 2023-08-01 Microjet Technology Co., Ltd. Wafer structure
TWI784341B (en) * 2020-11-03 2022-11-21 研能科技股份有限公司 Wafer structure
US11701884B2 (en) 2020-11-03 2023-07-18 Microjet Technology Co., Ltd. Wafer structure
TWI768529B (en) * 2020-11-03 2022-06-21 研能科技股份有限公司 Wafer structure
TWI760912B (en) * 2020-11-03 2022-04-11 研能科技股份有限公司 Wafer structure
US11718094B2 (en) 2020-11-03 2023-08-08 Microjet Technology Co., Ltd. Wafer structure
TWI790504B (en) * 2020-11-24 2023-01-21 研能科技股份有限公司 Wafer structure
US11738556B2 (en) 2020-11-24 2023-08-29 Microjet Technology Co., Ltd. Wafer structure
TWI826747B (en) * 2020-11-24 2023-12-21 研能科技股份有限公司 Wafer structure
US11850854B2 (en) 2020-11-24 2023-12-26 Microjet Technology Co., Ltd. Wafer structure

Also Published As

Publication number Publication date
TWI283890B (en) 2007-07-11

Similar Documents

Publication Publication Date Title
TW200707526A (en) CMOS compatible piezo-inkjet head
US9738517B2 (en) Mold for forming complex 3D MEMS components
US8280079B2 (en) Piezoelectric microspeaker and method of fabricating the same
JP5709536B2 (en) Silicon substrate processing method
US9604255B2 (en) Method, apparatus and system for a transferable micromachined piezoelectric transducer array
WO2007107736A3 (en) Method for fabricating a mems microphone
JP2018157159A (en) Package and manufacturing method thereof
JP2006306022A5 (en)
CN111216452B (en) Piezoelectric type MEMS ink-jet printing head and manufacturing method
US7585423B2 (en) Liquid discharge head and producing method therefor
Hikichi et al. Wafer-level selective transfer method for FBAR-LSI integration
HK1120935A1 (en) Drive module comprising mems micromotor, process for the production of this module and timepiece fitted with this module
TW200616884A (en) CMOS compatible piezo nano inkjet head
WO2008088069A1 (en) Fine structure body integrating method, fine structure body and micro device
KR20080095337A (en) Inkjet head and manufacturing method thereof
WO2022003251A3 (en) Mems resonator and manufacturing method
JP2011027057A (en) Piezoelectric pump and method for driving the same
JP4259019B2 (en) Manufacturing method of electronic parts
JP2007237525A (en) Method of manufacturing liquid discharge head
WO2012096048A1 (en) Piezoelectric vibration component
TWI222408B (en) Pressure chamber of a piezoelectric ink jet print head and fabrication method thereof
JP5075162B2 (en) Inkjet head manufacturing method
KR20110107595A (en) Manufacturing method of inkjet print head
JPWO2011099316A1 (en) Inkjet head manufacturing method
JP2005144571A (en) Manufacturing method for structure having thin film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees