TW200707526A - CMOS compatible piezo-inkjet head - Google Patents
CMOS compatible piezo-inkjet headInfo
- Publication number
- TW200707526A TW200707526A TW094126779A TW94126779A TW200707526A TW 200707526 A TW200707526 A TW 200707526A TW 094126779 A TW094126779 A TW 094126779A TW 94126779 A TW94126779 A TW 94126779A TW 200707526 A TW200707526 A TW 200707526A
- Authority
- TW
- Taiwan
- Prior art keywords
- nanojet
- wafer
- hole
- design
- silicon
- Prior art date
Links
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
This invention disclosed a method to manufacture the nano inkjet head using wafer-level fabrication process. Design by using CMOS process technology on the wafer to make nanojet hole, cavities, refill-proof design of the micro-channel, inlet, and driving wave generator circuits on the same side of the wafer. The devise we called E-TYPE design. First use CMOS process to fabricate metal layers, and oxide layers. Then dry-etch away silicon-dioxide and silicon to get nanojet hole, the refill-proof designed micro-channel, and cavities by MEMS process. Sputter non-wettable material around the nanojet hole to help nanosize-liquid ejection easily. Finally, align and bond nickel vibration membrane and piezoelectric thick film on the said silicon wafer to get the complete PZT nano-inkjet print head structure. Furthermore, the driving wave generator circuits can be designed simultaneously with the said nanojet. Thus, a system-on-chip package nanojet print head can be obtained. Also note that SCREAM (Single Crystal Reactive Etching and Metallization) process can be employed to fabricate the nanojet in E-TYPE design.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94126779A TWI283890B (en) | 2005-08-08 | 2005-08-08 | CMOS compatible piezo-inkjet head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94126779A TWI283890B (en) | 2005-08-08 | 2005-08-08 | CMOS compatible piezo-inkjet head |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200707526A true TW200707526A (en) | 2007-02-16 |
TWI283890B TWI283890B (en) | 2007-07-11 |
Family
ID=39430912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94126779A TWI283890B (en) | 2005-08-08 | 2005-08-08 | CMOS compatible piezo-inkjet head |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI283890B (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102320558A (en) * | 2011-09-13 | 2012-01-18 | 上海先进半导体制造股份有限公司 | Manufacturing method for cavity of full silica-based microfluidic device |
CN110998818A (en) * | 2017-08-07 | 2020-04-10 | 应用材料公司 | Process margin expansion using coated parts in plasma etch processes |
TWI760912B (en) * | 2020-11-03 | 2022-04-11 | 研能科技股份有限公司 | Wafer structure |
TWI768529B (en) * | 2020-11-03 | 2022-06-21 | 研能科技股份有限公司 | Wafer structure |
TWI784341B (en) * | 2020-11-03 | 2022-11-21 | 研能科技股份有限公司 | Wafer structure |
TWI790504B (en) * | 2020-11-24 | 2023-01-21 | 研能科技股份有限公司 | Wafer structure |
US11718094B2 (en) | 2020-11-03 | 2023-08-08 | Microjet Technology Co., Ltd. | Wafer structure |
US11738556B2 (en) | 2020-11-24 | 2023-08-29 | Microjet Technology Co., Ltd. | Wafer structure |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112013031746B1 (en) * | 2011-06-29 | 2020-10-20 | Hewlett-Packard Development Company, L.P | stack of piezoelectric inkjet inserts and piezoelectric printhead |
TWI661184B (en) * | 2017-04-19 | 2019-06-01 | 天亮醫療器材股份有限公司 | Detection apparatus and inlet structure thereof |
EP4298951A1 (en) | 2018-06-13 | 2024-01-03 | Samsonite IP Holdings S.ÀR.L. | Luggage article split along front and rear major faces |
-
2005
- 2005-08-08 TW TW94126779A patent/TWI283890B/en not_active IP Right Cessation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102320558B (en) * | 2011-09-13 | 2014-03-26 | 上海先进半导体制造股份有限公司 | Manufacturing method for cavity of full silica-based microfluidic device |
CN102320558A (en) * | 2011-09-13 | 2012-01-18 | 上海先进半导体制造股份有限公司 | Manufacturing method for cavity of full silica-based microfluidic device |
CN110998818B (en) * | 2017-08-07 | 2023-08-01 | 应用材料公司 | Process margin extension using coated parts in plasma etching process |
CN110998818A (en) * | 2017-08-07 | 2020-04-10 | 应用材料公司 | Process margin expansion using coated parts in plasma etch processes |
US11712890B2 (en) | 2020-11-03 | 2023-08-01 | Microjet Technology Co., Ltd. | Wafer structure |
TWI784341B (en) * | 2020-11-03 | 2022-11-21 | 研能科技股份有限公司 | Wafer structure |
US11701884B2 (en) | 2020-11-03 | 2023-07-18 | Microjet Technology Co., Ltd. | Wafer structure |
TWI768529B (en) * | 2020-11-03 | 2022-06-21 | 研能科技股份有限公司 | Wafer structure |
TWI760912B (en) * | 2020-11-03 | 2022-04-11 | 研能科技股份有限公司 | Wafer structure |
US11718094B2 (en) | 2020-11-03 | 2023-08-08 | Microjet Technology Co., Ltd. | Wafer structure |
TWI790504B (en) * | 2020-11-24 | 2023-01-21 | 研能科技股份有限公司 | Wafer structure |
US11738556B2 (en) | 2020-11-24 | 2023-08-29 | Microjet Technology Co., Ltd. | Wafer structure |
TWI826747B (en) * | 2020-11-24 | 2023-12-21 | 研能科技股份有限公司 | Wafer structure |
US11850854B2 (en) | 2020-11-24 | 2023-12-26 | Microjet Technology Co., Ltd. | Wafer structure |
Also Published As
Publication number | Publication date |
---|---|
TWI283890B (en) | 2007-07-11 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |