CN1072117C - 喷墨头电阻层的制程 - Google Patents
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Abstract
一种喷墨头电阻层的制程，其系于选定的基板上，以热氧化法(Thermal Oxidation)形成一介电层，再于该介电层上溅镀(Sputtering)一第一电阻层，而于该第一电阻层上溅镀一掺质层，又于该掺质层上溅镀一第二电阻层，继之通过一快速热制程步骤(Rapid Thermal Processing，RTP)，将使该掺质层扩散至该第一电阻层与该第二电阻层，以避免电子迁移现象(Electron Migration)发生，而得到特性较佳的喷墨头结构。
Description
本发明涉及一种喷墨头电阻层的制程，尤指一种可提高喷墨头性能之喷墨头电阻层的制程。
首先，请配合参阅图1，可得知由现有技术制作以电阻加热元件煮沸墨水，使墨水经由喷孔喷出的气泡的气泡式喷墨头时，其系先以一热氧化法(Thermal Oxidation)，形成一二氧化矽层12于一矽基板11上方，并于该二氧化矽层12上形成一电阻层13，而一般于喷墨头电阻层13之制程步骤中，其系直接以一直流溅镀(DC Sputtering)方式形成该电阻层13，且其中该电阻层13系为一钽铝合金(TaAl)层，之后，再形成一铝制导电层14于部分该电阻层13上方，并形成一氮化矽/碳化矽层的保护层15于未被该导电层14覆盖之该电阻层13上方及该导电层14上方，再形成一外隔层16于该保护层15上方，最后涂附上胶著剂，以供固贴一喷嘴片17，使得以完成一喷墨头的制程。
显然地，上述常用作法的缺陷即在于：借助于钽铝合金(TaAl)所形成的电阻层13，由于钽铝合金(TaAl)本身为一高电阻值材料，且将严重导致电子迁移现象(Elcctron Migtation)发生，因而将缩短喷墨头的使用寿命。
本发明主要目的，即在于提供一种可避免电子迁移现象(ElcctronMigtation)发生，以降低电阻层的电阻值，而能提高喷墨头使用寿命之喷墨头电阻层的制程。
本发明的喷墨头电阻层的制程，其制程步骤包括：(a)形成一介电层于一基板上；(b)形成一第一电阻层于该介电层上；(c)形成一掺质层于该第一电阻层上；(d)形成一第二电阻层于该掺质层上；以及(c)施行一热处理步骤，以使该掺质层扩散至该第一电阻层与该第二电阻层，形成该喷墨头的电阻层。
如上所述，该电阻层的制程，其中，该基板系可为一矽基板，且该介电层系以一热氧化法(Thermal Oxidation)之方式，形成于该矽基板上，而较佳地，该介电层系可为一二氧化矽(SiO2)层。
而于该介电层上，以一直流溅镀方式(DC Sputtering)形成该第一电阻层，较佳地，该第一电阻层为一氮化钽(TaN)层；再以一直流溅镀方式(DCSupttering)形成该掺质层于该第一电阻层上方；再以一直流溅镀方式(DCSputtering)形成该第二电阻层于该掺质层上方，当然，较佳地，该第二层电阻层系可为一氮化钽(TaN)层。
而其中，该掺质层中所包含的掺质系可为原子半径为钽(Ta)之10％-30％的元素，较佳地，该掺质层系可为一含铟(In)的金属层，或为一含铅(Pb)的金属层，或为一含镨(Pr)的金属层，抑或为一含钐(Sm)的金属层。
最后，该热处理步骤系采用一快速热制程(Rapid Thermal Processing,RTP)，而借助该快速制程，可使该掺质扩散至该第一电阻层与该第二电阻层，以得到本发明所需的电阻层。
而藉由本案所提供之电阻层，即可于该电阻层上完成喷墨头之后序制程，其步骤包含：借助溅镀法(Sputtering)与光学微影(Photolithography)与蚀刻技术(Etching)之方式，以形成一铝(Al)金属层，再以电浆增强汽相沉积法(PECVD)，或直流溅镀(DC Sputtering)方式，形成一氮矽化合物(SiN)层，再以直流溅镀(DC Sputtering)方式，形成一金(Au)金属层于未被该氮矽化合物层覆盖于该铝金属层上方，以及形成一光阻隔层于部分该氮矽化合物层上方，以形成一墨水储存槽，再借助喷孔处理步骤，即贴附一喷孔片于该光阻隔层上方，以提供至少一供墨水喷出的喷孔；以完成喷墨头的制程步骤。
综上所述，透过本发明所提供的喷墨头电阻层的制程之作法，而所提供的电阻层结构，可明显地避免以常用作法所形成的电子迁移现象(ElectronMigration)发生，而且能使喷墨头后续的其它制程顺利进行，同时，可提供一制程快速、性能较佳且使用寿命长的喷墨头结构。
本发明将通过下列附图及详细说明，可达到更深入了解：
图1为常用喷墨头的结构示意图。
图2(a)-(f)为本发明的较佳实施例制程步骤例示图。
现请参阅图2(a)-(f)，其系为本发明的较佳实施例制程步骤例示图，其中：
图2(a)包括下列步骤：
以一热氧化法(thermal Oxidation)，形成一介电层22于该基板21上，其中，该基板21系为一矽基板，且该介电层22系为一二氧化矽(SiO2)层；
图2(b)包括下列步骤：
以直流溅镀法(DC Sputtering)，形成一第一电阻层231于该二氧化矽(SiO2)层上方，而其中该第一电阻层231系为一氮化钽(TaN)层；
图2(c)系包括下列步骤：
以直流溅镀法(DC Sputtering)，形成一掺质层232于该氮化钽(TaN)层231上方，而其中该掺质层232中所包含的掺质系可为原子半径为钽(Ta)之10％-30％的元素，较佳地，该掺质层232系可为一含铟(In)的金属层，或为一含铅(Pb)的金属层，或为一含镨(Pr)的金属层，抑或为一含钐(Sm)的金属层；
图2(d)系包括下列步骤：
以直流溅镀法(DC Sputtering)，形成一第二电阻层233于该掺质层232上方，而其中该第二电阻层233系可为一氮化钽(TaN)层；
图2(c)系包括下列步骤：
以快速热制程(Rapid Thermal Processing,RTP)之方式，使该掺质层232扩散至该第一电阻层231与该第二电阻层233之中，以得到本发明所需经掺质的电阻层23；
借助本发明所提供的电阻层23，得以避免电子迁移现象(ElectronMigration)发生，则电阻层23将不会因长期过热而损坏。
图2(f)系包括下列步骤：
藉由溅镀法(Sputtering)，及光学策影(photolithography)，以及蚀刻技术(Etching)之方式，以形成一导电层24于该电阻层23上方的部分区域，其中，该导电层24系可为一铝(Al)金属层；
以电浆增强化学汽相沉积法(PECVD)，或直流溅镀(DC Sputtering)方式，形成一保护层25，而其中，该保护层25系可为一氮矽化合物(SiN)层，且该氮矽化合物(SiN)层系形成于未被该铝金属层覆盖的该电阻层23上方及作为导电层24的该铝金属层上的部分区域；
以直流溅镀(DC Sputtering)方式，形成一金属层26于未被该保护层25覆盖之该导电层24上方，而该金属层26系可为一金(Au)金属层；
形成一光阻隔层27于部分该保护层25上方，以形成一墨水储存槽；
再利用喷孔处理步骤，即可贴附一喷孔片28于该光阻隔层27上方，以提供至少一供墨水喷出的喷孔，以完成喷墨头的制程步骤。
如此，藉由本发明所提供的喷墨头电阻层，再继续于该电阻层上完成喷墨头的其余制程步骤，即可有效避免该电阻层电子迁移现象(ElectronMigration)，而使电阻层不会因长期过热而损坏，进而得以延长整组喷墨头的使用寿命。
Claims (10)
1．一种喷墨头电阻层的制程，其特征在于，：制程步骤包括：
a)形成一介电层于一基板上；
b)形成一第一电阻层于该介电层上；
c)形成一掺质层于该第一电阻层上；
d)形成一第二电阻层于该掺质层上；以及
e)施行一热处理步骤，以使掺质层扩散至该第一电阻层与该第二电
阻层，而形成该喷墨头的该电阻层。
2．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(a)中，该基板系可为一矽基板。
3．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(a)中，形成该介电层的方法系可以以一热氧化法，且该介电层可为一二氧化矽层。
4．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(b)中，形成该第一电阻层的方式系可以以一直流溅镀方式，且该第一电阻层系可为一氮化钽层。
5．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(c)中，形成该掺质层之方式系可以以一直流溅镀方式。
6．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(c)中，该掺质层中所包含之掺质系可为原子半径为钽之10％-30％之元素。
7．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(c)中，该掺质层系可为一含铟的金属层，或为一含铅的金属层，或为一镨的金属层，抑或为一含钐的金属层。
8．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(d)中，形成该第二电阻层之方式系可以以一直流溅镀方式。
9．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(d)中，该第二电阻层系可为一氮化钽层。
10．如权利要求1所述的喷墨头电阻层的制程，其特征在于，该步骤(e)中，该热处理步骤系可为一快速热制程，以使该掺质层扩散至该第一电阻层与该第二电阻层之中。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97121341A CN1072117C (zh) | 1997-10-21 | 1997-10-21 | 喷墨头电阻层的制程 |
| DE69829108T DE69829108T2 (de) | 1997-10-21 | 1998-10-21 | Herstellungsverfahren und Struktur eines Tintenstrahldruckkopfes |
| CA 2250788 CA2250788C (en) | 1997-10-21 | 1998-10-21 | Manufacturing process and structure of ink jet printhead |
| EP98250372A EP0930166B1 (en) | 1997-10-21 | 1998-10-21 | Manufacturing process and structure of ink jet printhead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97121341A CN1072117C (zh) | 1997-10-21 | 1997-10-21 | 喷墨头电阻层的制程 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1214992A CN1214992A (zh) | 1999-04-28 |
| CN1072117C true CN1072117C (zh) | 2001-10-03 |
Family
ID=5176249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97121341A Expired - Fee Related CN1072117C (zh) | 1997-10-21 | 1997-10-21 | 喷墨头电阻层的制程 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1072117C (zh) |
| DE (1) | DE69829108T2 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI823046B (zh) * | 2021-01-11 | 2023-11-21 | 研能科技股份有限公司 | 晶圓結構 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1104885A (zh) * | 1994-01-07 | 1995-07-12 | 吴重行 | 青少年近视、散光综合治疗仪 |
| CN1145855A (zh) * | 1995-04-21 | 1997-03-26 | 佳能株式会社 | 喷液记录头及制造它的方法 |
-
1997
- 1997-10-21 CN CN97121341A patent/CN1072117C/zh not_active Expired - Fee Related
-
1998
- 1998-10-21 DE DE69829108T patent/DE69829108T2/de not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1104885A (zh) * | 1994-01-07 | 1995-07-12 | 吴重行 | 青少年近视、散光综合治疗仪 |
| CN1145855A (zh) * | 1995-04-21 | 1997-03-26 | 佳能株式会社 | 喷液记录头及制造它的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1214992A (zh) | 1999-04-28 |
| DE69829108T2 (de) | 2006-04-13 |
| DE69829108D1 (de) | 2005-03-31 |
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