CN114750513A - 晶圆结构 - Google Patents
晶圆结构 Download PDFInfo
- Publication number
- CN114750513A CN114750513A CN202110902091.8A CN202110902091A CN114750513A CN 114750513 A CN114750513 A CN 114750513A CN 202110902091 A CN202110902091 A CN 202110902091A CN 114750513 A CN114750513 A CN 114750513A
- Authority
- CN
- China
- Prior art keywords
- wafer structure
- inches
- inkjet
- layer
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims abstract description 110
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 55
- 230000008569 process Effects 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 239000011241 protective layer Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000000976 ink Substances 0.000 claims description 114
- 239000004020 conductor Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000007641 inkjet printing Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000002861 polymer material Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 239000005360 phosphosilicate glass Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910000951 Aluminide Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910016570 AlCu Inorganic materials 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- UUQFGGZKYHEYHH-UHFFFAOYSA-N O.O.[O-2].[O-2].[O-2].[U+6] Chemical compound O.O.[O-2].[O-2].[O-2].[U+6] UUQFGGZKYHEYHH-UHFFFAOYSA-N 0.000 claims description 2
- 229910021124 PdAg Inorganic materials 0.000 claims description 2
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 2
- -1 aluminum silicon copper Chemical compound 0.000 claims description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims description 2
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- MELCCCHYSRGEEL-UHFFFAOYSA-N hafnium diboride Chemical compound [Hf]1B=B1 MELCCCHYSRGEEL-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000007639 printing Methods 0.000 description 49
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
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Abstract
一种晶圆结构，包含芯片基板及至少一喷墨芯片。芯片基板为一硅基材，以半导体制程制出。至少一喷墨芯片以半导体制程制生成于芯片基板上，并切割成至少一喷墨芯片。喷墨芯片包含多个墨滴产生器。多个墨滴产生器以半导体制程制出生成于芯片基板上，且每一墨滴产生器包含热障层、加热电阻层、导电层、保护层、障壁层、供墨腔室及喷孔。
Description
【技术领域】
本案关于一种晶圆结构，尤指以半导体制程制出适用于喷墨打印的喷墨芯片的晶圆结构。
【背景技术】
目前市面上常见的打印机除激光打印机外，喷墨打印机是另一种被广泛使用的机种，其具有价格低廉、操作容易以及低噪音等优点，且可打印于如纸张、相片纸等多种喷墨媒体。而喷墨打印机的打印品质主要取决于墨水匣的设计等因素，尤其以喷墨芯片释出墨滴至喷墨媒体的设计为墨水匣设计的重要考量因素。
如图1所示，以目前喷墨打印市场中所生产喷墨芯片是由一晶圆结构以半导体制程所制出，现阶段墨滴产生器1’生产皆以6英吋以下晶圆结构所制出；然，该喷墨芯片的墨滴产生器1’以半导体制程所制出后会再覆盖一喷孔板11’在其上所构成，而该喷孔板11’上有贯通至少一喷孔111’，供以对应到该墨滴产生器1’的一供墨腔室1a’的上方，促使该供墨腔室1a’所加热的墨水得由该喷孔111’喷出喷印在打印媒介上。因此该喷孔板11’上的设计需要另外先行加工该喷孔111’，无法与该喷墨芯片的墨滴产生器1’同时在半导体制程上制出，不仅增加了制造工序，又该喷孔111’要精准对位去对应到该供墨腔室1a’的位置，要将该喷孔板11’对位覆盖在该喷墨芯片的墨滴产生器1’上需要相对高的精准度；如此所制造出来该喷墨芯片制造成本高，这也是该喷墨芯片的制造成本不利于市场竞争力的关键因素。
又，在喷墨芯片在追求更高的高解析度与更高速打印的打印品质要求下，对于竞争激烈的喷墨打印市场中，喷墨打印机的售价下降的很快速，因此搭配墨水匣的喷墨芯片的制造成本以及更高解析度与更高速打印的设计成本就会取决于市场竞争力的关键因素。
但，以目前喷墨打印市场中所生产喷墨芯片是由一晶圆结构以半导体制程所制出，现阶段喷墨芯片生产皆以6英吋以下晶圆结构所制出，又要同时追求更高的高解析度与更高速打印的打印品质要求下，相对喷墨芯片的可打印范围(printing swath)的设计要变更大、更长，可大幅提高打印速度，如此喷墨芯片所需求整体面积就更大，因此要在6英吋以下有限面积的晶圆结构上制出需求喷墨芯片数量就会相当地受到限制，进而制造成本也无法有效地降低。
举例说明，例如，一片6英吋以下晶圆结构制出喷墨芯片的可打印范围(printingswath)为0.56英吋(inch)大概至多切割生成334颗喷墨芯片。若在一片6英吋以下晶圆结构上生成喷墨芯片的可打印范围(printing swath)超过1英吋(inch)或者页宽可打印范围(printing swath)A4尺寸(8.3英吋(inch)来制出更高的高解析度与更高速打印的打印品质要求下，相对要在6吋以下有限面积的晶圆结构上制出需求喷墨芯片数量就会相当的受到限制，数量更少，在6吋以下有限面积的晶圆结构上制出需求喷墨芯片就会有浪费剩余的空白面积，这些空白面积就会占去整片晶圆面积的空余率超过20％以上，相当浪费，进而制造成本也无法有效的降低。
有鉴于此，要如何符合喷墨打印市场中追求喷墨芯片的更低制造成本，以及追求更高解析度与更高速打印的打印品质，是本案最主要研发的主要课题。
【发明内容】
本案的主要目的是提供一种晶圆结构，包含一芯片基板及多个喷墨芯片，利用半导体制程来制出该芯片基板，促使该芯片基板上可布置更多需求数量的喷墨芯片，也在相同的喷墨芯片半导体制程直接生成不同可打印范围(printing swath)尺寸的喷墨芯片，同时在以半导体制程来制出的墨滴产生器过程中，并能同时将该墨滴产生器的供墨腔室及喷孔一体成型生成于障壁层中，因此如此制出喷墨芯片的半导体制程制出过程可以布置需求更高解析度及更高性能的打印喷墨设计，最后切割成需求实施应用于喷墨打印的喷墨芯片，达到喷墨芯片的更低制造成本，以及追求更高解析度与更高速打印的打印品质。
本案的一广义实施态样为提供一种晶圆结构，包含：一芯片基板，为一硅基材，以至少12英吋(in)以上晶圆的半导体制程制出；至少一喷墨芯片，以半导体制程制直接生成于该芯片基板上，并切割成至少一个该喷墨芯片实施应用于喷墨打印；该喷墨芯片包含：多个墨滴产生器，以半导体制程制出生成于该芯片基板上，且每一该墨滴产生器包含一热障层、一加热电阻层、一导电层、一保护层、一障壁层、一供墨腔室及一喷孔。
其中，该热障层为一绝缘隔热材料形成于该芯片基板上，该加热电阻层为一电阻材料形成于该热障层上，该导电层为一导电材料，该导电层的一部分形成于该加热电阻层上，该保护层的一部分形成于该加热电阻层上，该保护层的其他部分形成于该导电层上，而该障壁层为一高分子材料形成于该保护层上，且该供墨腔室及该喷孔一体成型于该障壁层中，且该供墨腔室底部连通该保护层，该供墨腔室顶部连通该喷孔。
【附图说明】
图1为已知喷墨芯片的墨滴产生器剖面示意图。
图2为本案晶圆结构一较佳实施例示意图。
图3为本案晶圆结构上生成墨滴产生器的剖面示意图。
图4A为本案晶圆结构上喷墨芯片布置相关供墨流道、岐流道及供墨腔室等元件一较佳实施例示意图。
图4B为图4A中C框区域的局部放大图。
图4C为图4A中单一喷墨芯片上成形喷孔布置排列一较佳实施例示意图。
图4D为本案晶圆结构上单一喷墨芯片布置供墨流道、导电层元件另一较佳实施例示意图。
图5为本案加热电阻层受导电层控制激发加热的简略电路示意图。
图6为本案晶圆结构上生成墨滴产生器的布置排列放大示意图。
图7为一种适用于喷墨打印机内部的承载系统的结构示意图。
【符号说明】
1’：墨滴产生器
1a’：供墨腔室
11’：喷孔板
111’：喷孔
1：承载系统
111：喷墨头
112：承载架
113：控制器
114：进给轴
115：扫描轴
116：第一驱动马达
117：位置控制器
118：储存器
119：第二驱动马达
120：送纸结构
121：电源
122：喷墨媒体
2：晶圆结构
20：芯片基板
21：喷墨芯片
22：墨滴产生器
221：热障层
222：加热电阻层
223：导电层
224：保护层
224A：第一保护层
224B：第二保护层
225：障壁层
226：供墨腔室
227：喷孔
23：供墨流道
24：岐流道
25：喷墨控制电路区
Ac1......Acn：水平轴行组
Ar1......Arn：纵向轴列组
C：框区域
G：栅极
HL：长度
HW：宽度
L：长度
Lp：可打印范围
M：间距
P：中心阶差间距
Q：晶体管开关
Vp：电压
W：宽度
【具体实施方式】
体现本案特征与优点的实施例将在后段的说明中详细叙述。应理解的是本案能够在不同的态样上具有各种的变化，其皆不脱离本案的范围，且其中的说明及图示在本质上当作说明之用，而非用以限制本案。
请参阅图2所示，本案提供一种晶圆结构2，包含：一芯片基板20及多个喷墨芯片21。其中芯片基板20为一硅基材，以半导体制程制出。在具体实施例中，芯片基板20可以利用12英吋(inch)晶圆的半导体制程制出；或者，在另一具体实施例中，芯片基板20可以利用16英吋(inch)晶圆的半导体制程制出。
上述的多个喷墨芯片21，分别以半导体制程制直接生成于芯片基板20上，并切割成至少一喷墨芯片21实施应用于上述的喷墨头111上喷墨打印。而喷墨芯片21分别包含：多个墨滴产生器22，以半导体制程制出生成于芯片基板20上，又如图3所示，每一墨滴产生器22包含一热障层221、一加热电阻层222、一导电层223、一保护层224、一障壁层225、一供墨腔室226及一喷孔227。
其中，热障层221为一绝缘隔热材料形成于芯片基板20上，绝缘隔热材料可为场氧化物(FOX)、二氧化硅(SiO2)、氮化硅(Si3N4)及磷硅玻璃(PSG)的其中之一。
加热电阻层222为一电阻材料形成于热障层221上，电阻材料可为多晶硅(Polysilicon)、铝化钽(TaAl)、钽(Ta)、氮化钽(TaN)、二硅化钽(Si2Ta)、碳(C)、碳化硅(SiC)、氧化铟锡(ITO)、氧化锌(ZnO)、硫化镉(CdS)、二硼化铪(HfB2)、钛钨合金(TiW)、氮化钛(TiN)的其中之一。
导电层223为一导电材料，导电材料为铝(Al)、铝铜合金(AlCu)、铝硅合金(AlSi)、金(Au)、钯(Pd)、钯银合金(PdAg)、铂(Pt)、铝硅铜(AlSiCu)、铌(Nb)、钒(V)、铪(Hf)、钛(Ti)、锆(Zr)、钇(Y)的其中之一。
保护层224的一部分形成于加热电阻层222上，且保护层224的其他部分形成于导电层223上，且保护层224由在下层的第一保护层224A堆叠上层的第二保护层224B所构成，该第一保护层224A为一钝化材料，钝化材料为氮化硅(Si3N4)、二氧化硅(SiO2)、二氧化钛(TiO2)、二氧化铪(HfO2)、二氧化锆(ZrO2)、五氧化二钽(Ta2O5)、七氧化二铼(Re2O7)、五氧化二铌(Nb2O5)、五氧化二铀(U2O5)、三氧化钨(WO3)、氮氧化硅(Si4O5N3)、碳化硅(SiC)的其中之一，第二保护层为一金属材料，金属材料为钽(Ta)、氮化钽(TaN)、氮化钛(TiN)、氮化钨(WN)的其中之一。
障壁层225为一高分子材料形成于保护层224上，高分子材料为聚酰亚胺(POLYIMIDE)、有机塑胶材料的其中之一；而供墨腔室226及喷孔227一体成型生成于障壁层225中，且供墨腔室226底部连通保护层224，供墨腔室226顶部连通喷孔227。
上述已将墨滴产生器22内部的结构及其所使用的材料详细揭露，而墨滴产生器22是如何在芯片基板20上实施半导体制程所制出，以下予以说明。
首先在芯片基板20上形成一层热障层221的薄膜，之后再以溅镀方式先后镀上加热电阻层222与导电层223，并以光刻蚀刻的制程厘定所需尺寸，之后再以溅镀装置或化学气相沉积(CVD)装置镀上保护层224，再以保护层224上以高分子膜压模成型出供墨腔室226，在涂布一层高分子膜压模成型喷孔227，以构成障壁层225一体成型于保护层224上，如此供墨腔室226及喷孔227一体成型生成于障壁层225中，或者，在另一具体实施例上，是在保护层224上以高分子膜直接以光刻蚀刻制程定义出供墨腔室226及喷孔227，如此供墨腔室226及喷孔227一体成型生成于障壁层225中，因此供墨腔室226底部连通保护层224，顶部连通喷孔227。其中芯片基板20为硅基材(SiO2)，加热电阻层222为铝化钽(TaAl)材料，导电层223为铝(Al)材料，保护层224由在下层的第一保护层224A堆叠上层的第二保护层224B所构成，第一保护层224A为氮化硅(Si3N4)材料，第一保护层224A为碳化硅(SiC)材料，障壁层225可以为一种高分子材料。
当然，上述喷墨芯片21的墨滴产生器22在芯片基板20上实施半导体制程所制出，在以光刻蚀刻的制程厘定所需尺寸过程中，如图4A至图4B所示进一步定义出至少一供墨流道23及多个岐流道24，再以保护层224上以干膜压模成型出供墨腔室226，再涂布一层干膜压模成型喷孔227，如此构成如图3所示障壁层225一体成形于保护层224上，且供墨腔室226及喷孔227一体成型生成于障壁层225中，供墨腔室226底部连通保护层224，供墨腔室226顶部连通喷孔227，喷孔227如图4D所示直接裸露于喷墨芯片21表面构成需求的排列布置，因此供墨流道23及岐流道24也是同时以半导体制程制出，其中供墨流道23可以提供一墨水，而供墨流道23连通多个岐流道24，且多个岐流道24连通每个墨滴产生器22的供墨腔室226。又如图4B所示加热电阻层222成形裸露于供墨腔室226中，加热电阻层222为具有一长度HL及一宽度HW所构成一矩形面积。
又请参阅图4A及图4C所示，供墨流道23为至少1个至6个。图4A所示单一喷墨芯片21的供墨流道23为1个，可以提供单色墨水，此单色墨水可以分别青色(C：Cyan)、洋红色(M：Megenta)、黄色(Y：Yellow)、黑色(K：Black)墨水。如图4C所示单一喷墨芯片21的供墨流道23为6个，分别提供黑色(K：Black)、青色(C：Cyan)、洋红色(M：Megenta)、黄色(Y：Yellow)、浅青色(LC：Light Cyan)和淡洋红色(LM：Light Megenta)六色墨水。当然，在另外实施例中，单一喷墨芯片21的供墨流道23也可为4个，分别提供青色(C：Cyan)、洋红色(M：Megenta)、黄色(Y：Yellow)、黑色(K：Black)四色墨水。供墨流道23数量可依实际需求设计来布置。
再请参阅图3、图4A、图4C及图5所示，上述导电层223在晶圆结构2上以实施半导体制程所制出，其中导电层223所连接的导体可以90纳米以下的半导体制程制出形成一喷墨控制电路，如此在喷墨控制电路区25可以布置更多金属氧化物半导体场效晶体管(MOSFET)，去控制加热电阻层222形成回路而激发加热或未形成回路则不激发加热；亦即如图5所示加热电阻层222受到一施加电压Vp时，晶体管开关Q控制加热电阻层222接地的回路状态，当加热电阻层222的一端接地形成回路而激发加热，或不接地未形成回路则不激发加热，其中晶体管开关Q为一金属氧化物半导体场效晶体管(MOSFET)，而导电层223所连接的导体为金属氧化物半导体场效晶体管(MOSFET)的栅极G；在其他较佳实施例中，导电层223所连接的导体为也可为一互补式金属氧化物半导体(CMOS)的栅极G，或者导电层223所连接的导体可为一N型金属氧化物半导体(NMOS)的栅极G。导电层223所连接的导体可依实际喷墨控制电路的需求去搭配选择适当晶体管开关Q。当然，导电层223所连接的导体可以90～65纳米半导体制程制出形成一喷墨控制电路；导电层223所连接的导体可以65～45纳米半导体制程制出形成一喷墨控制电路；导电层223所连接的导体可以45～28纳米半导体制程制出形成一喷墨控制电路；导电层223所连接的导体可以28～20纳米半导体制程制出形成一喷墨控制电路；导电层223所连接的导体可以20～12纳米半导体制程制出形成一喷墨控制电路；导电层223所连接的导体可以12～7纳米半导体制程制出形成一喷墨控制电路；导电层223所连接的导体可以7～2纳米半导体制程制出形成一喷墨控制电路。可以理解的是，以越精密的半导体制程技术，其在相同的单位体积下可以制出更多组的喷墨控制电路。
由上述说可知，本案提供一种晶圆结构2包含一芯片基板20及多个喷墨芯片21，利用半导体制程来制出芯片基板20，促使芯片基板20上可布置更多需求数量的多个喷墨芯片21，降低芯片基板20对于喷墨芯片21的限制，并且能够减少芯片基板20上未使用的区域，提升芯片基板20的利用率，降低空余率，降低制造成本，同时得以追求更高解析度与更高速打印的打印品质。
就以上述喷墨芯片21的解析度及可打印范围(printing swath)Lp尺寸的设计，以下予以说明。
如图4D及图6所示，上述的喷墨芯片21具有一长度L及一宽度W的矩形面积，可打印范围(printing swath)Lp，又喷墨芯片21包含多个墨滴产生器22，以半导体制程制出生成于芯片基板20上，而喷墨芯片21配置成沿纵向延伸相邻个墨滴产生器22保持一间距M的多个纵向轴列组(Ar1……Arn)，以及配置成沿水平延伸相邻个墨滴产生器22保持一中心阶差间距P的多个水平轴行组(Ac1……Acn)，亦即如图7所示，座标(Ar1,Ac1)墨滴产生器22与座标(Ar1,Ac2)墨滴产生器22保持一间距M，座标(Ar1,Ac1)墨滴产生器22与座标(Ar2,Ac1)墨滴产生器22保持一中心阶差间距P，而喷墨芯片21的解析度DPI(Dots Per Inch，每一英吋的点数量)即为1/中心阶差间距P，因此本案为了需求更高解析度，采以解析度至少600DPI以上的布置设计，亦即中心阶差间距P为至少1/600英吋(inch)以下。当然，本案喷墨芯片21的解析度DPI也可采以600～1200DPI之间设计，亦即中心阶差间距P为1/600英吋(inch)～1/1200英吋(inch)之间，而本案喷墨芯片21的解析度DPI最佳实例为采以720DPI设计，亦即中心阶差间距P为至少1/720英吋；或者，本案喷墨芯片21的解析度DPI也可采以1200～2400DPI之间设计，亦即中心阶差间距P为1/1200英吋(inch)～1/2400英吋(inch)之间；或者，本案喷墨芯片21的解析度DPI也可采以2400～2400DPI之间设计，亦即中心阶差间距P为至少1/2400英吋(inch)～1/24000英吋(inch)之间；或者，本案喷墨芯片21的解析度DPI也可采以24000～48000DPI之间设计，亦即中心阶差间距P为至少1/24000英吋(inch)～1/48000英吋(inch)之间。
上述的喷墨芯片21在晶圆结构2上可布置的可打印范围(printing swath)Lp可为至少0.25英吋(inch)以上；当然，喷墨芯片21的可打印范围(printing swath)Lp也可以为至少0.25英吋(inch)～0.5英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少0.5英吋(inch)～0.75英吋(inch)；喷墨芯片21的可打印范围(printingswath)Lp也可以为至少0.75英吋(inch)～1英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少1英吋(inch)～1.25英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少1.25英吋(inch)～1.5英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少1.5英吋(inch)～2英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少2英吋(inch)～4英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少4英吋(inch)～6英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少6英吋(inch)～8英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为至少8英吋(inch)～12英吋(inch)；喷墨芯片21的可打印范围(printing swath)Lp也可以为8.3英吋(inch)，而8.3英吋(inch)即为A4纸张的页宽尺寸，使喷墨芯片21可具备A4纸张的页宽打印的功能；喷墨芯片21的可打印范围(printing swath)Lp也可以为11.7英吋(inch)，而11.7英吋(inch)为A3纸张的页宽尺寸，使喷墨芯片21可具备A3纸张的页宽打印的功能；此外，喷墨芯片21的可打印范围(printingswath)Lp也可以为12英吋(inch)以上。喷墨芯片21在晶圆结构2上可布置的宽度W为至少0.5毫米(㎜)～10毫米(㎜)。当然，喷墨芯片21的宽度也可以为至少0.5毫米(㎜)～4毫米(㎜)；喷墨芯片21的宽度也可以为至少4毫米(㎜)～10毫米(㎜)。
本案提供一种晶圆结构2包含一芯片基板20及多个喷墨芯片21，利用半导体制程来制出芯片基板20，促使芯片基板20上可布置更多需求数量的多个喷墨芯片21，而多个喷墨芯片21因此，本案晶圆结构2所切割下来多个喷墨芯片21，可应用于一喷墨头111上实施喷墨打印。请参阅图7所示，承载系统1主要用来支撑本案的喷墨头111结构，其中，承载系统1可包含承载架112、控制器113、第一驱动马达116、位置控制器117、第二驱动马达119、送纸结构120以及提供整个承载系统1运作能量的电源121。上述的承载架112主要用来容置喷墨头111且其一端与第一驱动马达116连接，用以带动喷墨头111于扫描轴115方向上沿直线轨迹移动，喷墨头111可以是可更换地或是永久地安装在承载架112上，而控制器113是与承载架112相连接，用以传送控制信号至喷墨头111上。上述的第一驱动马达116可为一步进马达，但不以此为限，其是根据位置控制器117所传送的控制信号沿着扫描轴115来移动承载架112，而位置控制器117则是借由储存器118来确定承载架112于扫描轴115的位置，另外，位置控制器117更可用来控制第二驱动马达119运作，以驱动喷墨媒体122，例如：纸张，与送纸结构120之间，进而使喷墨媒体122可沿进给轴114方向移动。当喷墨媒体122在打印区域(未图示)中确定定位后，第一驱动马达116在位置控制器117的驱动下将使承载架112及喷墨头111在喷墨媒体122上沿扫描轴115移动而进行打印，于扫描轴115上进行一次或是多次扫描后，位置控制器117将控制第二驱动马达119运作，以驱动喷墨媒体122与送纸结构120之间，使喷墨媒体122可沿进给轴114方向移动，以将喷墨媒体122的另一区域放置到打印区域中，而第一驱动马达116将再带动承载架112及喷墨头111在喷墨媒体122上沿扫描轴115移动而进行另一行打印，一直重复到所有的打印数据都打印到喷墨媒体122上时，喷墨媒体122将被推出到喷墨打印机的输出拖架(未图示)上，以完成打印动作。
综上所述，本案提供一种晶圆结构，包含一芯片基板及多个喷墨芯片，利用半导体制程来制出该芯片基板，促使该芯片基板上可布置更多需求数量的喷墨芯片，亦可在相同的喷墨芯片半导体制程直接生成不同可打印范围(printing swath)尺寸的喷墨芯片，同时在以半导体制程来制出的墨滴产生器过程中，并能同时将该墨滴产生器的供墨腔室及喷孔一体成型生成于障壁层中，因此如此制出喷墨芯片的半导体制程制出过程可以布置需求更高解析度及更高性能的打印喷墨设计，最后切割成需求实施应用于喷墨打印的喷墨芯片，达到喷墨芯片的更低制造成本，以及追求更高解析度与更高速打印的打印品质，极具产业利用性。
本案得由熟知此技术的人士任施匠思而为诸般修饰，然皆不脱如附申请专利范围所欲保护者。
Claims (40)
1.一种晶圆结构，包含：
一芯片基板，为一硅基材，以至少12英吋以上晶圆的半导体制程制出半导体制程制出；以及
至少一喷墨芯片，以半导体制程制直接生成于该芯片基板上，并切割成至少一该喷墨芯片实施应用于喷墨打印，其中该喷墨芯片包含：
多个墨滴产生器，以半导体制程制出生成于该芯片基板上，且每一该墨滴产生器包含一热障层、一加热电阻层、一导电层、一保护层、一障壁层、一供墨腔室及一喷孔；
其中，该热障层为一绝缘隔热材料形成于该芯片基板上，该加热电阻层为一电阻材料形成于该热障层上，该导电层为一导电材料，该导电层的一部分形成于该加热电阻层上，该保护层的一部分形成于该加热电阻层上，该保护层的其他部分形成于该导电层上，而该障壁层为一高分子材料形成于该保护层上，且该供墨腔室及该喷孔一体成型于该障壁层中，且该供墨腔室底部连通该保护层，该供墨腔室顶部连通该喷孔。
2.如权利要求1所述的晶圆结构，其特征在于，该绝缘隔热材料为场氧化物(FOX)、二氧化硅(SiO2)、氮化硅(Si3N4)及磷硅玻璃(PSG)的其中之一。
3.如权利要求1所述的晶圆结构，其特征在于，该电阻材料为多晶硅(Polysilicon)、铝化钽(TaAl)、钽(Ta)、氮化钽(TaN)、二硅化钽(Si2Ta)、碳(C)、碳化硅(SiC)、氧化铟锡(ITO)、氧化锌(ZnO)、硫化镉(CdS)、二硼化铪(HfB2)、钛钨合金(TiW)、氮化钛(TiN)的其中之一。
4.如权利要求1所述的晶圆结构，其特征在于，该导电材料为铝(Al)、铝铜合金(AlCu)、铝硅合金(AlSi)、金(Au)、钯(Pd)、钯银合金(PdAg)、铂(Pt)、铝硅铜(AlSiCu)、铌(Nb)、钒(V)、铪(Hf)、钛(Ti)、锆(Zr)、钇(Y)的其中之一。
5.如权利要求1所述的晶圆结构，其特征在于，该保护层由在下层的一第一保护层堆叠上层的一第二保护层所构成。
6.如权利要求5所述的晶圆结构，其特征在于，该第一保护层为一钝化材料，该钝化材料为氮化硅(Si3N4)、二氧化硅(SiO2)、二氧化钛(TiO2)、二氧化铪(HfO2)、二氧化锆(ZrO2)、五氧化二钽(Ta2O5)、七氧化二铼(Re2O7)、五氧化二铌(Nb2O5)、五氧化二铀(U2O5)、三氧化钨(WO3)、氮氧化硅(Si4O5N3)、碳化硅(SiC)的其中之一。
7.如权利要求5所述的晶圆结构，其特征在于，该第二保护层为一金属材料，该金属材料为钽(Ta)、氮化钽(TaN)、氮化钛(TiN)、氮化钨(WN)的其中之一。
8.如权利要求1所述的晶圆结构，其特征在于，该高分子材料为聚酰亚胺(POLYIMIDE)、有机塑胶材料的其中之一。
9.如权利要求1所述的晶圆结构，其特征在于，该喷墨芯片包含至少一供墨流道及多个岐流道以半导体制程制出，其中该供墨流道提供一墨水，以及该供墨流道连通多个该岐流道，且多个该岐流道连通每个墨滴产生器的该供墨腔室。
10.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以90纳米以下的半导体制程制出形成一喷墨控制电路。
11.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以90～65纳米半导体制程制出形成一喷墨控制电路。
12.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以65～45纳米半导体制程制出形成一喷墨控制电路。
13.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以45～28纳米半导体制程制出形成一喷墨控制电路。
14.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以28～20纳米半导体制程制出形成一喷墨控制电路。
15.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以20～12纳米半导体制程制出形成一喷墨控制电路。
16.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以12～7纳米半导体制程制出形成一喷墨控制电路。
17.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体以7～2纳米半导体制程制出形成一喷墨控制电路。
18.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体为金属氧化物半导体场效晶体管的一栅极。
19.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体为互补式金属氧化物半导体的一栅极。
20.如权利要求1所述的晶圆结构，其特征在于，该导电层所连接的导体为N型金属氧化物半导体的一栅极。
21.如权利要求9所述的晶圆结构，其特征在于，该供墨流道为至少1个至6个。
22.如权利要求21所述的晶圆结构，其特征在于，该供墨流道为1个，提供单色墨水。
23.如权利要求21所述的晶圆结构，其特征在于，该供墨流道为4个，分别提供青色、洋红色、黄色、黑色，共四色墨水。
24.如权利要求21所述的晶圆结构，其特征在于，该供墨流道为6个，分别提供黑色、青色、洋红色、黄色、浅青色和淡洋红色，共六色墨水。
25.如权利要求1所述的晶圆结构，其特征在于，该喷墨芯片的一可打印范围为至少0.25英吋以上，该喷墨芯片的一宽度为0.5毫米～10毫米。
26.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少0.25英吋～0.5英吋。
27.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少0.5英吋～0.75英吋。
28.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少0.75英吋～1英吋。
29.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少1英吋～1.25英吋。
30.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少1.25英吋～1.5英吋。
31.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少1.5英吋～2英吋。
32.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少2英吋～4英吋。
33.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少4英吋～6英吋。
34.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少6英吋～8英吋。
35.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少8英吋～12英吋。
36.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为至少12英吋以上。
37.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为8.3英吋。
38.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该可打印范围为11.7吋。
39.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该宽度为至少0.5毫米～4毫米。
40.如权利要求25所述的晶圆结构，其特征在于，该喷墨芯片的该宽度为至少4毫米～10毫米。
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| TW110101004A TWI823046B (zh) | 2021-01-11 | 2021-01-11 | 晶圓結構 |
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| CN114536979A (zh) * | 2020-11-24 | 2022-05-27 | 研能科技股份有限公司 | 晶圆结构 |
| CN114750514A (zh) * | 2021-01-11 | 2022-07-15 | 研能科技股份有限公司 | 晶圆结构 |
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| TWI846440B (zh) * | 2023-04-21 | 2024-06-21 | 研能科技股份有限公司 | 噴墨晶片 |
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| US20220219456A1 (en) | 2022-07-14 |
| US11731424B2 (en) | 2023-08-22 |
| TW202228293A (zh) | 2022-07-16 |
| CN114750513B (zh) | 2024-07-12 |
| TWI823046B (zh) | 2023-11-21 |
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