TWI822955B - Workpiece cutting processing method and workpiece cutting processing device - Google Patents

Abstract

An object of the present invention is to provide an X-θ type wire saw device that can cut the workpiece with less deterioration in the Warp value even if the direction in which the Warp value greatly deteriorates (theta direction) is used as the cutting direction of the workpiece. processing method. The cutting processing method of the present invention is a cutting processing method of a workpiece. A line array is formed by a plurality of wire guides and wires. The plurality of wire guides are arranged at predetermined intervals so that they are parallel to each other in the direction of the rotation axes and in the direction of each other. The respective outer surfaces are respectively formed with grooves at predetermined intervals, and the wires are wound in a spiral shape at predetermined intervals in the grooves of the wire guide. n (n≧2) crystal ingots are arranged side by side as a plurality of workpieces for cutting, and the plurality of workpieces are simultaneously pressed against the wire guide while rotating the wire in the axial direction Line array, and the plurality of workpieces are cut and processed into wafer shapes at multiple locations at the same time. The workpieces are single crystal ingots whose central axis direction is the >111> direction or the >100> direction, and at least one of the plurality of workpieces is One is a single crystal ingot with a central axis direction of >111>. The cutting direction of each ingot is set as follows: cut the single crystal ingot with a central axis direction of >111> with a line. When the angle at which the cutting direction deviates from the >110> direction during cutting is θ (°), the sum of θ (θ ₁ +θ ₂ +...+θ _n ) of each of the plurality of workpieces is -30°≦ θ ₁ +θ ₂ +…+θ _n ≦30° [However, the angle θ offset from the (1-10) direction, (-101) direction and (01-1) direction is the counterclockwise direction, and from The angle θ of the (0-11) direction, (-110) direction, and (10-1) direction deviation is the clockwise direction as the positive direction, -30°≦θ≦+30°; and the central axis direction is > The θ of a single crystal ingot with the 100> direction is 0° regardless of the cutting direction].

Description

Workpiece cutting processing method and workpiece cutting processing device

The present invention relates to a workpiece cutting processing method and a workpiece cutting processing device.

In recent years, there has been a demand for enlargement of wafers (increase in diameter), and along with this increase, wire saws are exclusively used for cutting ingots (for example, Patent Document 1). The wire saw makes the wire (high-tension steel wire) travel at high speed, and sprays the refining slurry on the wire while pressing it against the workpiece (for example, crystal ingots of brittle materials such as silicon, glass, and ceramics can be cited as examples. Below, there are also A cutting device that cuts multiple wafers at the same time.

In cutting by a wire saw, first, the workpiece to be cut is held by a workpiece holder having a workpiece plate holding the workpiece via a reinforcing plate and a holder body supporting the workpiece plate. Next, the workpiece holder holding the workpiece is attached to the wire saw, and the workpiece W is pressed against the line formed by the line that the roller with a plurality of grooves is wound around and moves back and forth in the axial direction, thereby pressing the workpiece W Cut into wafer shapes. The wire saw cuts the workpiece in the vertical direction of the workpiece support. Furthermore, each line forming the line array intersects the workpiece holder approximately perpendicularly.

When cutting a wafer from a cylindrical ingot having a crystal orientation such as that of a semiconductor single crystal silicon (hereinafter referred to as a "workpiece"), cutting is performed based on the crystallographic plane of the workpiece. Generally, on the central axis of the cylindrical workpiece (the workpiece There is a deviation between the axis on the shape of the part) and the orientation of the crystallographic axis (normal line of the crystal plane), and this deviation needs to be corrected before cutting (Patent Documents 1 and 2).

The following methods are known to correct the orientation of the crystal axis.

(1) The method is to attach the workpiece to the fixture installed on the wire saw through the reinforcing plate, rotate the workpiece, adjust the orientation in the Y-axis direction, and adjust the attachment angle of the workpiece holder in the X-axis direction ( Called the "X-θ method").

(2) The method is to install the workpiece holder with the workpiece attached to it after the wire saw, and adjust the position inside the wire saw (called "internal operation X-Y tilt method").

(3) The method is to attach the workpiece to the fixture installed on the wire saw through the reinforcing plate. By using a special fixture, the tilt adjustment in the Y-axis direction is performed, and the X-axis direction is based on the attachment angle to the workpiece holder. Perform orientation adjustment (called "external operation X-Y tilt method").

Furthermore, it is known that when slicing a workpiece having an axial orientation other than <100>, such as an axial orientation <111>, the cutting direction (cutting direction of the line) when slicing the workpiece causes the difference between the front and back surfaces of the cut wafer. The damage difference changes (due to the difference in processing resistance), and the slice quality (mainly Warp value) changes significantly (see Patent Document 3).

In addition, the definition of Warp is shown in Figure 4. Warp is a shape parameter related to the deviation of the wafer from the center line plane. It is the maximum in-plane distance between the imaginary central plane of the unadsorbed and fixed wafer and the reference plane. Bow in the figure is a similar evaluation to Warp, and is the shape parameter of the distance between the center of the wafer and the reference plane. In addition, the measurement method is specified in JEIDA-43-1999 and ASTM F1530-94.

[Prior technical literature]

[Patent Document]

[Patent Document 1] Japanese Patent Publication No. 11-48238

[Patent Document 2] Japanese Patent Publication No. 2017-24145

[Patent Document 3] Japanese Patent Publication No. 2014-195025

Therefore, when adjusting the crystal orientation of the workpiece in the Y-axis direction by rotating the workpiece as in the aforementioned (1) And cut off. For example, in the past, cutting was carried out after shifting the allowable range of the specifications.

However, when the orientation specifications are strict, it is impossible to adjust the target to change the orientation, so the general wire saw cannot cut off good products, but it can be adjusted in the X-Y tilt method (mentioned (2) and (3) above). A device or a special fixture that can be adjusted in an X-Y tilt manner for cutting.

However, wire saws that support the X-Y tilt method described in Patent Document 2 are generally expensive, require azimuth alignment during internal operations, and have a problem of low device productivity. Furthermore, in the adjustment using the X-Y tilt method described in Patent Document 2, when the specifications are greatly tilted in the Y direction, there is a large difference in the cutting amount due to the position of the workpiece, and a stable Warp value cannot be obtained.

The present invention was made to solve the above problems, and its object is to provide a workpiece cutting method and a workpiece cutting device that can significantly deteriorate the Warp value. When the direction is used as the cutting direction of the workpiece, it is possible to achieve cutting with less deterioration in the Warp value using an break.

The present invention has been made to achieve the above object, and provides a cutting processing method, which is a cutting processing method of a workpiece, in which a plurality of wire guides are provided, and the plurality of wire guides are arranged at a predetermined interval from each other. The direction of the rotation axis is parallel and grooves are formed at predetermined intervals on their respective outer surfaces, and by winding spiral lines at predetermined intervals in the grooves of the wire guide to form a line array, n (n ≧2) The crystal ingots are arranged side by side as a plurality of workpieces for cutting, and the plurality of workpieces are pressed against the line at the same time by rotating the wire guide so that the wire travels in the axial direction. The plurality of workpieces are cut and processed into wafer shapes at multiple locations at the same time. The workpieces are single crystal ingots whose central axis direction is the <111> direction or the <100> direction, and at least one of the plurality of workpieces is the central axis. For single crystal ingots whose direction is the <111> direction, set the cutting direction of each ingot as follows: When cutting a single crystal ingot whose central axis direction is the <111> direction with a line When the angle at which the cutting direction deviates from the <110> direction is θ (°), the sum of θ (θ ₁ +θ ₂ +...+θ _n ) of the complex workpieces is -30°≦θ ₁ + θ ₂ +...+θ _n ≦30°[However, the angle θ offset from the (1-10) direction, (-101) direction and (01-1) direction takes the counterclockwise direction as the positive direction, and the angle θ offset from (1-10) direction, (-101) direction and (01-1) direction is The angle θ of the deviation in the 0-11) direction, the (-110) direction, and the (10-1) direction takes the clockwise direction as the positive direction, -30°≦θ≦+30°. In addition, the θ of a single crystal ingot whose central axis direction is the <100> direction is 0° regardless of the cutting direction].

According to this cutting processing method, it is possible to use an X-θ method wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method, which is associated with high costs, thereby improving productivity and suppressing the Warp value. worsen.

In this case, the cutting processing method can be performed by setting the cutting direction of each ingot so that θ of each of the plurality of workpieces is not all positive or negative.

This can more effectively suppress the deterioration of the Warp value.

In this case, the cutting processing method can be such that the sum of θ is -5°≦θ ₁ +θ ₂ +...+θ _n ≦5°, more preferably θ ₁ +θ ₂ +...+θ _n =0° to perform cutting.

This can more effectively suppress the deterioration of the Warp value.

At this time, the cutting processing method can make the plurality of workpieces into the first and second crystal ingots. The first crystal ingot uses a single crystal ingot whose central axis direction is the <111> direction, and is set to cut the first crystal ingot with a line. For the first crystal ingot, the angle θ ₁ in which the cutting direction deviates from the <110> direction is in the range of 0°≦θ ₁ ≦30°. For the second crystal ingot, a single crystal ingot whose central axis direction is the <111> direction is used. , and set the angle θ 2 at which _the cutting direction deviates from the <110> direction when cutting the second crystal ingot with a line to be -30°≦θ ₂ ≦0° to perform cutting.

This can more reliably suppress the deterioration of the Warp value.

At this time, the cutting processing method can make the plurality of workpieces into the first crystal ingot and the second crystal ingot. The first crystal ingot uses a single crystal ingot whose central axis direction is the <111> direction, and is set to line cutting. When cutting the first crystal ingot, the angle θ ₁ at which the cutting direction deviates from the <110> direction is -30°≦θ ₁ ≦30°. The second crystal ingot is made using a crystal ingot whose central axis direction is the <100> direction. Make the cut.

This can more reliably suppress the deterioration of the Warp value.

At this time, the cutting processing method may be such that the length and diameter of the second crystal ingot are greater than the length and diameter of the first crystal ingot in the first crystal ingot or the second crystal ingot.

This can further improve productivity and more reliably suppress deterioration of the Warp value.

Furthermore, the present invention provides a workpiece cutting and processing device, which includes a plurality of wire guides, a wire array, n workpiece holding parts, and a control part. The plurality of wire guides are arranged at predetermined intervals to form mutual rotation axes. The directions are parallel and grooves are formed at predetermined intervals on respective outer surfaces; the line array is formed by spirally wound lines at predetermined intervals in the grooves of the wire guide; the n workpiece holding parts are respectively held Using n (n≧2) crystal ingots as plural workpieces for cutting, and a control unit; the control unit controls the wire to travel in the axial direction while rotating the wire guide. The plurality of workpieces are pressed to the line at the same time, and the plurality of workpieces are cut and processed into wafer shapes at multiple locations at the same time. The control unit controls: from the central axis direction to the <111> direction or the <100> direction. Select the workpiece as a single crystal ingot, and make at least one of the plurality of workpieces a single crystal ingot with the central axis direction as the <111> direction. Set the cutting direction of each crystal ingot as follows to perform cutting: When the angle at which the cutting direction deviates from the <110> direction when a single crystal ingot whose central axis is in the <111> direction is cut by a line is defined as θ (°), the sum of θ of each of the plurality of workpieces (θ ₁ +θ ₂ +...+θ _n ) is -30°≦θ ₁ +θ ₂ +...+θ _n ≦30° [However, from the (1-10) direction, (-101) direction The offset angle θ from the (01-1) direction is the counterclockwise direction, and the angle θ offset from the (0-11) direction, (-110) direction, and (10-1) direction is the clockwise direction. is the positive direction, -30°≦θ≦+30°; also, the θ of a single crystal ingot whose central axis direction is the <100> direction is 0° regardless of the cutting direction].

According to this kind of workpiece cutting processing device, it is possible to maintain the productivity of the X-θ type wire saw device associated with low cost and suppress the deterioration of the Warp value.

In this case, it is possible to provide a workpiece cutting and processing device which is controlled by the control unit so that the cutting direction of each crystal ingot is set so that the θ of each of the plurality of workpieces is not all positive or negative. to cut off.

This can more effectively suppress the deterioration of the Warp value.

In this case, it may be a workpiece cutting and processing device, and the workpiece cutting and processing device is controlled by the control unit so that the sum of θ is set to -5°≦θ ₁ +θ ₂ +...+θ _n ≦5°, more preferably θ ₁ +θ ₂ +...+θ _n for cutting.

This can more effectively suppress the deterioration of the Warp value.

At this time, it may be a workpiece cutting and processing device, that is, the cutting and processing device cuts the first crystal ingot and the second crystal ingot that are the plurality of workpieces, and the control unit controls the use of the first crystal ingot. The central axis direction is the <111> direction of a single crystal ingot, and the cutting direction when cutting the first crystal ingot with a line is set to an angle θ ₁ offset from the <110> direction, which is 0°≦θ ₁ ≦ In the range of 30°, the second crystal ingot uses a single crystal ingot whose central axis direction is the <111> direction, and the cutting direction when cutting the second crystal ingot with a line is set to be offset from the <110> direction. The angle θ ₂ is -30°≦θ ₂ ≦0° to perform cutting.

This can more reliably suppress the deterioration of the Warp value.

In this case, it may be a workpiece cutting and processing device that cuts the first crystal ingot and the second crystal ingot that are the plurality of workpieces, and the control unit controls the first crystal ingot to use a central axis. The direction is a single crystal in the <111> direction, and the cutting direction when cutting the first crystal ingot with a line is set to an angle θ ₁ offset from the <110> direction, which is -30°≦θ ₁ ≦30°, The second crystal ingot is cut using a crystal ingot whose central axis direction is the <100> direction.

This can more reliably suppress the deterioration of the Warp value.

As described above, according to the workpiece cutting processing method of the present invention, single crystal ingots having the <111> direction can be cut without complicated operations, improve productivity at low cost, and suppress the increase in Warp value. worsen. Furthermore, according to the workpiece cutting processing device of the present invention, single crystal ingots having the <111> direction can be cut without complicated operations, thereby improving productivity at low cost and suppressing deterioration of the Warp value. .

1,1’: Wire guide

2: line

3: Line array

4,4’: workpiece (crystal ingot)

5,5: Workpiece holding part

6:Control Department

100: Workpiece cutting and processing device (wire saw)

A:arrow

B:arrow

C:arrow

X: direction

Y: direction

θ: Offset angle

FIG. 1 shows a schematic diagram of the workpiece cutting device of the present invention.

Figure 2 is an explanatory diagram of suppression of Warp value deterioration.

Figure 3 shows the relationship between the angle θ at which the cutting direction of the wafer is shifted from the <110> direction and the Warp value obtained in Reference Example 1, Examples 1-3, 6, and Comparative Example 1-3.

Figure 4 shows the definition of Warp.

Figure 5 shows a conceptual diagram of a cross-section perpendicular to the axial direction of a workpiece (single crystal ingot) with axial orientation <111>.

Figure 6 shows the definition of the cutting direction θ of a workpiece (single crystal ingot) with axis orientation <111>.

Figure 7 shows the dependence of the Warp value of the cut wafer on the cutting direction.

Figure 8 shows the dependence of the Warp value (relative value) on the cutting time when cutting a workpiece with the axis orientation <111> at an angle of 30° in which the cutting direction is offset from the <110> direction.

[Form used to implement the invention]

The present invention will be described in detail below, but the present invention is not limited thereto.

As described above, there is a need for a workpiece cutting method and a workpiece cutting device that use a direction in which the Warp value greatly deteriorates as a cutting method. It is also possible to achieve cutting with less deterioration in the Warp value by using a wire saw device in the X-θ method without using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method.

As a result of the inventors' efforts to review the above-mentioned problems, they found that by the following cutting processing method, it is possible to improve productivity by using an X-θ method wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the XY tilt method. , and suppressing the deterioration of the Warp value, the present invention is completed. The cutting processing method is a cutting processing method of a workpiece, in which a plurality of wire guides are provided, and the plurality of wire guides are arranged at predetermined intervals to form mutual rotation axes. The directions are parallel and grooves are formed at predetermined intervals on their respective outer surfaces, and the grooves of the wire guide are wound into spiral lines at predetermined intervals to form a line array, and n (n≧2) The ingots are arranged side by side as a plurality of workpieces for cutting, and the plurality of workpieces are simultaneously pressed against the line array while rotating the wire guide to advance the wire in the axial direction, thereby cutting the plurality of workpieces. The workpiece is cut and processed into a wafer shape at multiple places at the same time. The workpiece is a single crystal ingot whose central axis direction is the <111> direction or the <100> direction, and at least one of the plurality of workpieces has a central axis direction of < For single crystal ingots in the 111> direction, set the cutting direction of each ingot as follows: When cutting a single crystal ingot with the central axis direction in the <111> direction with a line, the cutting direction is from <110>When the angle of direction deviation is θ (°), the sum of θ of each complex workpiece (θ ₁ +θ ₂ +...+θ _n ) is -30°≦θ ₁ +θ ₂ +. ..+θ _n ≦30°[However, the angle θ offset from the (1-10) direction, (-101) direction and (01-1) direction is the positive direction in the counterclockwise direction, and from (0-11) The angle θ of the offset direction, (-110) direction, and (10-1) direction takes the clockwise direction as the positive direction, -30°≦θ≦+30°; and the central axis direction is the single direction of <100> The θ of the crystal ingot is 0° regardless of the cutting direction].

Furthermore, it was discovered that by using the following workpiece cutting processing device, it is possible to improve productivity and suppress the deterioration of the Warp value by using the X-θ method wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the XY tilt method. To complete the present invention, the workpiece cutting and processing device includes a plurality of wire guides, a wire array, n workpiece holding portions, and a control portion. The plurality of wire guides are arranged at predetermined intervals so as to be parallel to each other in the rotation axis direction. And grooves are formed at predetermined intervals on respective outer surfaces; the line array is formed by spirally winding wires at predetermined intervals in the grooves of the wire guide; the n workpiece holding parts are respectively maintained and used as n (n≧2) ingots of a plurality of workpieces to be cut, and a control unit; the control unit controls the wire to advance in the axial direction while rotating the wire guide; The workpieces are pressed to the line at the same time, and the plurality of workpieces are cut and processed into wafer shapes at multiple places at the same time. The control unit controls the direction from the central axis to the <111> direction or the <100> direction. For crystal ingots, select the workpiece, and make at least one of the plurality of workpieces be a single crystal ingot with the central axis direction being the <111> direction. Set the cutting direction of each crystal ingot as follows to perform cutting: When the cutting direction of a single crystal ingot whose central axis is in the <111> direction is cut by a line and deviates from the <110> direction by an angle of θ (°), the sum of θ of each of the plurality of workpieces (θ ₁ +θ ₂ +...+θ _n ) is -30°≦θ ₁ +θ ₂ +...+θ _n ≦30°.

In addition, as described above, the present invention improves productivity by using a wire saw device of the X-θ method, which is associated with low cost, instead of using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method, which is associated with high costs. In addition, it goes without saying that the device used for cutting is not limited to the X-θ method to suppress the deterioration of the Warp value, but can also be implemented in the X-Y tilt method.

Hereinafter, description will be made with reference to the drawings.

As mentioned before, it is known that when slicing a workpiece with axis orientation <111>, due to the cutting direction (the cutting direction of the line) when slicing the workpiece, the surface and back of the cut wafer will be different (due to processing resistance). poor) damage differential change ation, the slice quality (mainly Warp value) changes significantly. In addition, the following description illustrates the use of single crystal silicon as the workpiece. As long as the workpiece has an axis orientation of <111>, it is not limited to single crystal silicon.

Figure 5 shows a conceptual diagram of a cross-section perpendicular to the axis direction of a single crystal silicon with axis orientation <111>. For example, when the cutting direction of the wire saw is the direction shown by the solid arrow shown in Figure 5, the damage difference between the front and back of the wafer is small, and the impact on the Warp value is small. However, when the cutting direction is the direction shown by the dotted arrow in Figure 5, the damage difference between the front and back of the wafer is large, and the Warp value is greatly deteriorated.

In addition, the direction of the solid arrow in Figure 5 is the <110> direction in crystallography. When this specification refers to the "<110> direction", as shown in the solid arrow in Figure 5, it includes the crystallographically equivalent orientation. .

Here, the definition of the cutting direction of a single crystal ingot whose central axis direction is the <111> direction and the <100> direction will be explained with reference to FIG. 6 . In this specification, "the angle θ (°) shifted from the <110> direction" refers to the angle shifted from the <110> direction. At this time, regarding the signs (+ direction, - direction) that indicate the direction of the offset angle, the offset angle θ from the (1-10) direction, (-101) direction, and (01-1) direction is in the counterclockwise direction. is the positive direction, and the angle θ offset from the (0-11) direction, (-110) direction, and (10-1) direction is the clockwise direction. Also, -30°≦θ≦+30°.

For example, when arrow A shown in Figure 6 is the cutting direction, since the angle of deviation from the (1-10) direction is the positive direction in the counterclockwise direction, the angle from the (1-10) direction to the minus (minus) direction is ) direction is offset by 15°, and the angle offset from the <110> direction is "-15°". In addition, when arrow B shown in Figure 6 is the cutting direction, it is offset by 20° from the (1-10) direction to the plus direction, and the angle offset from the <110> direction is "+20°". When arrow C shown in Figure 6 When it is the cutting direction, since the angle of deviation from the (0-11) direction is the clockwise direction, it is shifted by 15° from the (0-11) direction to the positive (plus) direction, from the <110> direction. The offset angle is "+15°". In addition, the offset angle θ is -30°≦θ≦+30° in terms of the symmetry of the crystal orientation. In addition, in FIG. 6 , the (1-10) direction, the (-101) direction, and the (01-1) direction are directions in which the processing resistance characteristics in the cutting direction are equal from the symmetry of the crystal. The signs of the offset angle θ based on these directions are the same. On the other hand, the processing resistance characteristics of the cutting direction in the (0-11) direction, the (-110) direction, and the (10-1) direction are different (opposite) from those in the (1-10) direction. Therefore, the sign of the angle θ offset from the (0-11) direction, (-110) direction, and (10-1) direction is the same as that from the (1-10) direction, (-101) direction, and (01-1 ) direction deviation angle θ has the opposite sign. In addition, the processing resistance characteristics in the cutting direction will be described in detail later.

For a specific example, when the positive and negative directions of θ are regarded as the same reference (the same rotation direction is shown with the same sign), the (1-21) direction shown in Figure 5 will produce the direction from (1-10) Offset by +30°, and offset by -30° from the (0-11) direction. However, since the processing resistance characteristics of the cutting direction in the (1-10) direction and the (0-11) direction are different (opposite), based on the definition of the present invention, the (1-21) direction will be changed from (1-10) The angle θ of the direction deviation is presented as +30°, and the angle θ of the deviation from the (0-11) direction is presented as +30°.

In addition, regarding single crystal ingots whose central axis direction is the <100> direction, as will be explained later, the damage (due to difference in processing resistance) on the front and back of the wafer without the cutting direction is different, so regardless of the cutting direction, θ =0°. In other words, when the central axis direction is the <100> direction of a single crystal ingot, no matter what angle the cutting direction is, it is defined as θ=0°.

Here, Figure 7 shows the dependence of the Warp value of the cut wafer on the cutting direction investigated by the inventor of the present invention when slicing a single crystal silicon with an axis orientation <111>. The horizontal axis displays the angle θ [°] in which the cutting direction deviates from the <110> direction, and the vertical axis displays the Warp value (relative value). As shown in Figure 7, it can be seen that the Warp value is optimal when the cutting direction is 0°, and as the offset angle increases, the Warp value deteriorates (increases).

The inventor of this case further investigated the difference in Warp value caused by the cutting time (ie, cutting speed). Figure 8 shows the relationship between the cutting time and the Warp value (relative value) when the angle θ of the cutting direction shifted from the <110> direction is θ=+30° for single crystal silicon with axis orientation <111>. Figure. As shown in Figure 8, even if the cutting direction is a direction offset by an angle of +30° from the <110> direction, the deterioration of the Warp value can be suppressed by making the cutting time long (making the cutting speed low). However, productivity is significantly reduced.

As a result of intensive investigation, the inventor of this case found that even if the cutting direction of the workpiece is a direction in which the Warp value greatly deteriorates (theta direction), multiple workpieces can be cut simultaneously. The cutting direction or the crystal axis orientation adopts a specific By combining this, a simple device can be used, and the deterioration of the Warp value can be prevented, and productivity can be further improved.

First, a wire saw, which is a workpiece cutting device according to the present invention, will be described with reference to FIG. 1 . FIG. 1 shows an example of a wire saw as a workpiece cutting device according to the present invention. The upper picture in Figure 1 is a picture viewed from the front, and the lower picture is a picture viewed from above. The wire saw 100 includes a plurality of cylindrical wire guides 1 and 1' arranged at predetermined intervals so as to be parallel to each other in the directions of rotation axes, and having grooves formed on the outer surfaces at predetermined intervals. The grooves of the work piece are wound into a line 3 formed into a spiral line 2 at a predetermined pitch, and the work piece holding portion 5 can respectively hold a plurality of work pieces (ingots) 4, 4' to be cut, and the number corresponds to the number of the work pieces. , 5’. During operation (cutting of workpieces), the control unit 6 (omitted in the lower figure of Fig. 1) is controlled to rotate the wire guides 1, 1' by traveling in the axial direction, so that the wire 2 travels in the axial direction. A plurality of workpieces 4, 4' are pressed against the line 3, and the plurality of workpieces 4, 4' are cut into wafer shapes at a plurality of places at the same time.

The wire saw 100, which is a workpiece cutting device of the present invention, has the following structure. The structure includes a number of workpiece holding parts 5, 5' corresponding to the number of workpieces to be cut, for example, two or more clamping parts. , and a plurality of workpieces (crystal ingots) 4, 4' can be arranged side by side and cut simultaneously. As will be described later, the control unit 6 controls the cutting processing device so as to set the cutting directions of a plurality of workpieces and perform cutting processing. In addition, the workpiece cutting device can be applied to either free abrasive grain type or fixed abrasive grain type.

Next, the cutting method of the workpiece according to the present invention will be described. A plurality of workpieces (crystal ingots) 4, 4' are arranged side by side and cut simultaneously. At least one of the plurality of workpieces is a single crystal ingot whose central axis direction is the <111> direction.

After receiving the workpiece for processing, the crystallization characteristics of the workpiece are measured and data such as the orientation of the crystal axis are obtained. Thereafter, characteristic values such as the crystal orientation (direction) of the outer periphery of the workpiece, orientation correction values, etc. are calculated. This orientation correction value is a correction value for the inclination during cutting due to the difference between the orientation of the workpiece and the specifications of the workpiece (the surface orientation of the wafer to be cut). Next, based on the obtained characteristic values, a combination of workpieces to be cut is selected, and the cutting direction is set (described later).

Finally, the set cutting direction or the calculated correction value is used to make adjustments so that the workpiece is held on the workpiece holder of the workpiece holding part and installed on the wire saw. Carry out the same procedure for multiple workpieces. Then, multiple workpieces are cut and processed simultaneously.

Next, the setting of the cutting direction of the workpiece to be cut is explained. For multiple workpieces to be cut simultaneously, set the cutting direction of each workpiece so that the sum of the angles θ _n (°) offset from the <110> direction by the cutting direction of each workpiece is -30° or more. Below 30° (-30°≦θ ₁ +θ ₂ +...+θ _n ≦30°). When the sum of the angles θ (°) offset from the <110> direction is less than -30° or greater than +30°, the deterioration of the Warp value cannot be suppressed. The sum of θ _n (°) is preferably -5°≦θ ₁ +θ ₂ +...+θ _n ≦5°, and even more preferably θ ₁ +θ ₂ +...+θ _n =0° .

By setting the cutting direction in this range, even if the direction in which the Warp value greatly deteriorates (theta direction) has to be used as the cutting direction of the workpiece, cutting processing with less deterioration in the Warp value can be achieved. As a result, it is possible to achieve cutting with less deterioration in the Warp value using the X-θ method wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the expensive X-Y tilt method.

With the above settings, the reason why the deterioration of the Warp value can be suppressed is as follows, even when the direction in which the Warp value greatly deteriorates (theta direction) has to be used as the cutting direction of the workpiece. When cutting only one workpiece, as mentioned before, due to the cutting direction (the cutting direction of the line) when slicing the workpiece, the damage difference between the surface and back of the cut wafer changes (due to the difference in processing resistance). Quality (mainly Warp value) changes significantly. On the other hand, when multiple workpieces are cut simultaneously as in the present invention, it is presumed that the workpieces in the cutting direction that are less likely to cause deterioration in the Warp value function like a wire guide and suppress the cut crystals. The round surface and back surface are less damaged (due to poor processing resistance).

In particular, by setting the cutting direction of each ingot so that the angle θ (°) of the workpiece cutting direction offset from the <110> direction is not all positive or negative, the above-mentioned effect is even higher. In other words, when the cutting process is performed with a mixture of positive and negative signs of the angle θ _n (°) by which the cutting direction deviates from the <110> direction, the effect is higher.

Use Figure 2 to illustrate this point. Figure 2 shows when cutting a workpiece (single crystal ingot) whose central axis direction is in the <111> direction when the cutting direction of the workpiece deviates from the (1-10) direction at an angle θ of +30° and -30°. Picture of differences. As shown in "Individual cutting" in the upper part of Figure 2, for example, when a workpiece with θ=-30° is cut individually (only one piece), the cutting resistance (processing resistance) is poor, and there is a wire before cutting. The direction deviates to the left, with the maximum deviation at the center of the workpiece, and then returns to a state where it deviates in the direction of weak processing resistance (right side). As a result, the cut wafer becomes warped into the shape shown in the figure (that is, the Warp value is large). On the other hand, when the workpiece is θ=+30°, it has processing resistance characteristics in the cutting direction that are symmetrical to the workpiece θ=-30°, so the shape of the cut wafer is also the same as that of θ=-30°. ° is symmetrical (the warping direction is opposite). In this way, it is considered that the Warp value deteriorates due to the influence of the processing resistance of the crystal surface. In addition, when the symmetry of the crystal is taken into consideration, when the (1-10) direction, (-101) direction and (01-1) direction are used as the basis of the offset angle, it is different from the (0-11) direction, ( When the -110) direction and the (10-1) direction are the reference for the offset angle, the relationship between the offset direction of the cutting direction and the direction of warping is symmetrical (opposite). For example, when cutting in a direction offset by 15° from the (1-10) direction to the counterclockwise direction and when cutting in a direction offset by 15° in the counterclockwise direction from the (0-11) direction, the warpage Although the degree is approximately the same, the direction of warping is opposite.

On the other hand, when the cutting direction of the workpiece is set at an angle θ offset from the (1-10) direction of +30° and -30°, two workpieces are placed side by side, and cutting is performed at the same time, as shown in Figure 2 As shown in "side-by-side cutting", the directions of the processing resistance acting on each workpiece cancel each other. As a result, it is considered that the deterioration of the shape of the cut wafer, that is, the deterioration of the warp is suppressed.

From this point of view, if the first and second crystal ingots use single crystal ingots whose central axis direction is the <111> direction, the first crystal ingot is set so that the cutting direction when cutting with a line is offset from the <110> direction. The shifting angle θ ₁ is in the range of 0°≦θ ₁ ≦30°, and the second crystal ingot is set so that the angle θ ₂ shifted from the <110> direction by the cutting direction when cutting the line is -30°≦θ ₂ Cutting in the range of ≦0° can effectively offset the processing resistance and obtain wafers with better Warp value.

As a result of repeated reviews, the inventor of this case found that the Warp value can be suppressed even if the angle θ by which the cutting direction of the workpiece is offset from the <110> direction is other than a combination of workpieces with different signs (positive and negative). of deterioration. At this time, according to the experiments conducted by the present inventor, it is clear that not only the Warp value is averaged, but also it is more strongly affected by workpieces whose Warp value does not deteriorate (is lower).

In addition, among the combinations of cutting directions described above, it is preferable to use the same crystallographic direction as the reference for the offset angle θ of the cutting direction for a plurality of crystal ingots. The crystallographic direction as the reference can also be used. It goes without saying that the cutting directions are different directions. For example, let the cutting direction of the first crystal ingot be an angle θ ₁ offset from the direction (1-10) in Figure 6, and the cutting direction of the second crystal ingot can be similarly set from (1-10) The angle θ ₂ of the direction shift can also make the cutting direction of the second crystal ingot be the angle θ ₂ shifted from the (-101) direction, or the angle θ ₂ shifted from the (0-11) direction.

As mentioned above, even if the angle θ at which the cutting direction of the workpiece is offset from the <110> direction is other than the combination of workpieces with different signs (positive and negative), the deterioration of the Warp value can be suppressed. For example, when the angle θ of one of the cutting directions of a single crystal ingot whose central axis direction is the <111> direction deviates from the <110> direction is θ=0°, a wafer with a good Warp value can also be obtained. As shown in Figure 7, when the angle θ at which the cutting direction deviates from the <110> direction is θ=0°, the Warp value will not deteriorate. When this kind of workpiece is used as a workpiece for simultaneous cutting, the effect of suppressing the deterioration of warp is even higher.

Another example of the combination of workpieces will be described. The first crystal ingot uses a single crystal ingot whose central axis direction is the <111> direction, so that the angle θ ₁ at which the cutting direction deviates from the <110> direction is -30°≦θ ₁ ≦+30°. In addition, the second ingot is cut using a single crystal ingot whose central axis direction is the <100> direction (in this case, it is defined as θ ₂ =0°), thereby obtaining a wafer with a good Warp value. Even if a single crystal ingot whose central axis is in the <100> direction is cut separately, the Warp value will not deteriorate. At this time, similar to the above-mentioned case of using a single crystal ingot with the central axis direction in the <111> direction as the second ingot and setting the angle θ at which the cutting direction deviates from the <110> direction to θ=0°, Warp can be suppressed The worsening effect is higher.

Just like the second crystal ingot uses a single crystal ingot with the central axis direction of <111>, the angle θ ₂ at which the cutting direction deviates from the <110> direction is θ ₂ =0° or the central axis direction is <100 > In the case of single crystal ingots with > direction (from the definition of θ ₂ =0°), when using a cutting direction or ingot that does not deteriorate the Warp value even if it is cut alone, the length and diameter of the second ingot should be The length and diameter of other crystal ingots are above. When cutting multiple workpieces with different shapes such as length or diameter at the same time, the larger workpiece will be cut separately. If the larger workpiece is cut in a cutting direction or ingot, the Warp value will not be deteriorated even if it is cut individually. , wafers with good Warp value can be obtained from all workpieces to be cut.

In addition, representative values of cutting processing conditions are shown in Table 1 for reference.

[Example]

The present invention will be described in detail below with reference to examples. However, these examples do not limit the present invention.

(Reference Example 1)

Single crystal silicon with an axis orientation of <111> was used, and the cutting direction was offset by an angle θ from the <110> direction to the direction of θ=0°, and the second crystal ingot was not used. In addition, based on the cutting time of this reference example 1 and the The Warp value of the wafer obtained in Reference Example 1 is used as a standard (1.0), and is used as a standard value for comparative evaluation of the following Examples and Comparative Examples.

(Reference Example 2)

Single crystal silicon with the axis direction <111> was used, and the angle θ offset from the <110> direction was set to the direction of θ=0°, and the cutting time was 1.5 times that of Reference Example 1, and cutting was performed. The second crystal ingot is not used. The Warp value of the cut wafer is 0.8.

(Example 1)

The first ingot uses single crystal silicon with axis orientation <111>, so the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =+10°. In addition, the second ingot uses single crystal silicon with an axis orientation of <111>, so that the angle θ ₂ at which the cutting direction deviates from the <110> direction is θ ₂ =0°. Then, the two workpieces are arranged side by side and cut simultaneously. The sum of θ (θ ₁ +θ ₂ ) is +10°. Furthermore, in Examples 1-6, the cutting time was set to 1.5 times that of Reference Example 1. The Warp value of the cut wafer is 1.0 for the wafer cut from the first ingot and 1.0 for the wafer cut from the second ingot.

(Example 2)

The first ingot uses single crystal silicon with axis orientation <111>, and the cutting direction is offset from the <110> direction by an angle θ ₁ =+20°. In addition, the second ingot uses single crystal silicon with an axis orientation of <111>, and the cutting direction is offset from the <110> direction by an angle θ ₂ =0°. Then, the two workpieces are arranged side by side and cut simultaneously. The sum of θ (θ ₁ +θ ₂ ) is +20°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafer is 1.8 for the wafer cut from the first ingot and 1.2 for the wafer cut from the second ingot.

(Example 3)

The first ingot uses single crystal silicon with axis orientation <111>, so the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =+30°. In addition, the second ingot uses single crystal silicon with an axis orientation of <111>, so that the angle θ ₂ at which the cutting direction deviates from the <110> direction is θ ₂ =0°. Next, the two workpieces are arranged side by side and cut simultaneously. The sum of θ (θ ₁ +θ ₂ ) is +30°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafers is 1.9 for the wafer cut from the first ingot and 1.2 for the wafer cut from the second ingot.

(Example 4)

The first ingot uses single crystal silicon with axis orientation <111>, so the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =+30°. In addition, the second ingot was crystallized using the axis orientation <100>. Next, the two workpieces are arranged side by side and cut simultaneously. The sum of θ (θ ₁ +θ ₂ ) is +30°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafers is 1.9 for the wafer cut from the first ingot and 1.2 for the wafer cut from the second ingot.

(Example 5)

The first ingot uses single crystal silicon with axis orientation <111>, so the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =+30°. In addition, the second ingot uses single crystal silicon with an axis orientation of <111>, so that the angle θ ₂ at which the cutting direction deviates from the <110> direction is θ ₂ =-30°. Next, the two workpieces are arranged side by side and cut simultaneously. The sum of θ (θ ₁ +θ ₂ ) is 0°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafer is 1.5 for the wafer cut from the first ingot and 1.5 for the wafer cut from the second ingot.

(Example 6)

The first ingot uses single crystal silicon with the axis orientation <111>, so that the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =0°. In addition, the second ingot uses single crystal silicon with an axis orientation of <111>, and the cutting direction is an angle θ ₂ offset from the <110> direction, which is θ ₂ =0°. Next, the two workpieces are arranged side by side and cut simultaneously. The sum of θ (θ ₁ +θ ₂ ) is 0°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafer is 1.0 for the wafer cut from the first ingot and 1.0 for the wafer cut from the second ingot.

(Comparative example 1)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=+10°. Except for this, the cutting conditions were the same as Reference Example 1 (the second crystal ingot was not used). The Warp value of the cut wafer is 4.0.

(Comparative example 2)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=+20°. Except for this, the cutting conditions were the same as Reference Example 1 (the second crystal ingot was not used). The Warp value of the cut wafer is 7.0.

(Comparative example 3)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=+30°. Except for this, the cutting conditions were the same as Reference Example 1 (the second crystal ingot was not used). The Warp value of the cut wafer is 8.2.

(Comparative example 4)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=-30°. Except for this, the cutting conditions were the same as Reference Example 1 (the second crystal ingot was not used). The Warp value of the cut wafer is 8.8.

(Comparative example 5)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=+30°. In addition, the cutting time was 1.5 times that of Reference Example 1, and the cutting conditions were the same as Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 3.7.

(Comparative example 6)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=+30°. Also, let the cutting time be twice that of Reference Example 1. Except for this, the cutting conditions were the same as Reference Example 1 (the second crystal ingot was not used). The Warp value of the cut wafer is 2.1.

(Comparative Example 7)

The first ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ at which the cutting direction deviates from the <110> direction is θ=+30°. Also, let the cutting time be three times that of Reference Example 1. Except for this, the cutting conditions were the same as Reference Example 1 (the second crystal ingot was not used). The Warp value of the cut wafer is 1.5.

(Comparative example 8)

The first ingot uses single crystal silicon crystallized in the axis orientation <111>, so that the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =+30°. In addition, the second ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ ₂ at which the cutting direction deviates from the <110> direction is θ ₂ =+10°. The sum of θ (θ ₁ +θ ₂ ) is +40°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafer is 4.0 for the wafer cut from the first ingot, and 2.0 for the wafer cut from the second ingot.

(Comparative Example 9)

The first ingot uses single crystal silicon crystallized in the axis orientation <111>, so that the angle θ ₁ at which the cutting direction deviates from the <110> direction is θ ₁ =-30°. In addition, the second ingot uses single crystal silicon crystallized with the axis orientation <111>, so that the angle θ ₂ at which the cutting direction deviates from the <110> direction is θ ₂ =-10°. The sum of θ (θ ₁ +θ ₂ ) is -40°. Except for this, the cutting conditions are the same as those in Example 1. The Warp value of the cut wafers is 3.8 for the wafer cut from the first ingot and 2.1 for the wafer cut from the second ingot.

Table 2 shows the conditions and experimental results of the Examples, Reference Examples, and Comparative Examples.

[Table 2]

Figure 3 is based on the data shown in Table 2. The wafers obtained in Reference Example 1, Examples 1-3, 6, and Comparative Examples 1-3 show that the cutting direction of the single crystal ingot is shifted from the <110> direction. The relationship between the angle θ and the Warp value. The Warp value is displayed as a relative value using the value of Reference Example 1 as the reference (1.0). Regarding the embodiment, ingot 1 and ingot 2 are plotted separately. As shown in FIG. 3 , the Warp value of the wafer cut from the ingot 1 of the embodiment is very low compared with the Warp value of the wafer cut from the ingot of the comparative example. In addition, regarding the ingot 2 of Example 1 (the angle θ=0° at which the cutting direction deviates from the <110> direction), the Warp value is the same as that of Reference Example 1, and there is no deterioration. In addition, regarding Example 4, since the type of ingot 2 is different, it is not plotted on the same scatter diagram. As is clear from Table 2, it can be confirmed that the Warp value of ingot 2 itself hardly deteriorates. On the other hand, it can be Suppresses the deterioration of the Warp value of ingot 1.

In addition, it is clear from Table 2 that although the cutting time in Examples 1-6 is 1.5 times that of Reference Example 1, since two pieces are cut at the same time, the actual cutting time of one piece of workpiece is 0.75 times. . In other words, it is found that deterioration of the Warp value can be prevented and productivity can be improved.

Furthermore, by comparing the results of Examples 3 and 4 with Comparative Example 5, it is clear that even when the second ingot is cut alone, it is confirmed that the cutting direction does not cause a deterioration of the Warp value, or does not cause a deterioration of the Warp value. When the ingot is cut, the deterioration of the Warp value after the first ingot is cut can be suppressed.

As mentioned before, even when there is only one workpiece, the deterioration of the Warp value can be suppressed by making the cutting time long (making the cutting speed low) (Fig. 8, Comparative Example 4-7). However, comparing Example 5 and Comparative Example 7, it is clearly understood that in Example 5, a wafer with the same Warp value as in Comparative Example 7 can be cut with 4 times the productivity (2 times the cutting speed, 2 times the number of pieces cut) 2 times) manufacturing.

In addition, the present invention is not limited to the above-described embodiment. The above-mentioned embodiments are examples, and any embodiments having substantially the same structure as the technical ideas described in the patentable scope of the present invention and exhibiting the same functions and effects are included in the technical scope of the present invention.

X: direction

Y: direction

θ: offset angle

Claims (21)

A cutting processing method, which is a cutting processing method of a workpiece. A plurality of wire guides are provided. The plurality of wire guides are arranged at predetermined intervals so that the directions of rotation axes of each other are parallel to each other and at predetermined intervals on their respective outer surfaces. A groove is formed, and a line is formed by winding a spiral line at a predetermined pitch in the groove of the line guide, and n (n≧2) crystal ingots are arranged side by side as a plurality of workpieces for cutting. By rotating the wire guide so that the wire travels in the axial direction, the plurality of workpieces are simultaneously pressed into the line array, and the plurality of workpieces are simultaneously cut and processed into wafer shapes at multiple locations. The workpiece is a single crystal ingot with a central axis direction of >111> direction or >100> direction, and at least one of the plurality of workpieces is a single crystal ingot with a central axis direction of >111> direction. Each crystal ingot is The cutting direction is set as follows for cutting: When cutting a single crystal ingot with a central axis direction of >111> with a line, the angle at which the cutting direction deviates from the >110> direction is θ (°) When , the sum of θ of each complex workpiece (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ +θ ₂ +…+θ _n ≦30 [However, from the direction of (1-10) , (-101) direction) and (01-1) direction offset angle θ, with the counterclockwise direction as the positive direction, offset from (0-11) direction, (-110) direction, and (10-1) direction The angle θ takes the clockwise direction as the positive direction, -30°≦θ≦+30°; also, the θ of a single crystal ingot whose central axis direction is >100> is 0° regardless of the cutting direction]. For example, the cutting processing method in item 1 of the patent scope applied for, among which, The cutting direction of each crystal ingot is set so that not all θ of each of the plurality of workpieces is positive or negative to perform cutting. For example, in the cutting processing method of claim 1, cutting is performed by setting the sum of θ to -5°≦θ ₁ +θ ₂ +...+θ _n ≦5°. For example, in the cutting processing method of claim 2, cutting is performed by setting the sum of θ to -5°≦θ ₁ +θ ₂ +...+θ _n ≦5°. For example, in the cutting processing method of claim 1, cutting is performed by setting the sum of θ to θ ₁ + θ ₂ +...+θ _n =0°. For example, in the cutting processing method of claim 2, cutting is performed by setting the sum of θ to θ ₁ +θ ₂ +…+θ _n =0°. For example, in the cutting processing method of claim 3, cutting is performed by setting the sum of θ to θ ₁ + θ ₂ +...+θ _n =0°. For example, in the cutting processing method of claim 4, cutting is performed by setting the sum of θ to θ ₁ + θ ₂ +...+θ _n =0°. If the cutting processing method of any one of items 1 to 8 of the patent scope is applied for, wherein the plurality of workpieces are the first crystal ingot and the second crystal ingot, the direction of the central axis of the first crystal ingot is> A single crystal ingot in the 111> direction, and is set so that when the first crystal ingot is cut with a line, the angle θ ₁ in which the cutting direction deviates from the >110> direction is in the range of 0° ≦ θ ₁ ≦ 30°. The 2nd crystal ingot uses a single crystal ingot with the central axis direction in the >111> direction, and is set so that the angle θ _{2 at which the cutting direction deviates from the >110> direction when cutting the second crystal ingot with a line} is -30°≦ θ ₂ ≦0°, to perform cutting. If the cutting processing method of any one of items 1 to 8 of the patent scope is applied for, wherein the plurality of workpieces are the first crystal ingot and the second crystal ingot, the direction of the central axis of the first crystal ingot is> The single crystal ingot in the 111> direction is set so that when the first crystal ingot is cut with a line, the angle θ ₁ in which the cutting direction deviates from the >110> direction is -30°≦θ ₁ ≦30°, and the second The crystal ingot is cut using a single crystal ingot whose central axis is in the >100> direction. For example, the cutting processing method in item 9 of the patent scope applied for, among which, In the first crystal ingot or the second crystal ingot, the length and diameter of the second crystal ingot are greater than the length and diameter of the first crystal ingot. For example, the cutting processing method in item 10 of the patent application scope, among which, In the first crystal ingot or the second crystal ingot, the length and diameter of the second crystal ingot are greater than the length and diameter of the first crystal ingot. A device for cutting workpieces, including: a plurality of wire guides arranged at predetermined intervals so as to be parallel to each other in the direction of their rotation axes, and grooves are formed at predetermined intervals on their respective outer surfaces; The grooves of the wire guide are formed by spirally wound wires at a predetermined pitch; n workpiece holding parts respectively hold n (n≧2) crystal ingots used as plural workpieces for cutting; and a control unit; the control unit performs control to press the plurality of workpieces to the line array simultaneously while rotating the wire guide so that the wire travels in the axial direction, and simultaneously pressing the plurality of workpieces to the line array. Cutting and processing into wafers at multiple places, the control unit controls to select the workpiece from the single crystal ingot with the central axis direction being the >111> direction or the >100> direction, and make at least one of the plurality of workpieces For single crystal ingots whose central axis is in the >111> direction, set the cutting direction of each ingot as follows: When cutting single crystal ingots whose central axis is in the >111> direction with a line When the angle at which the cutting direction deviates from the >110> direction is θ (°), the sum of θ of each of the complex workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ + θ ₂ +…+θ _n ≦30°, [However, the offset angle θ from the (1-10) direction, (-101) direction) and (01-1) direction takes the counterclockwise direction as the positive direction, and is from ( The angle θ of the deviation in the 0-11) direction, the (-110) direction, and the (10-1) direction takes the clockwise direction as the positive direction, -30°≦θ≦+30°; and the central axis direction is >100 >The θ of the single crystal ingot in the direction is 0° regardless of the cutting direction]. For example, the workpiece cutting and processing device in item 13 of the patent scope, among which: The control unit performs the following control to perform cutting: The cutting direction of each ingot is set so that not all θ of each of the plurality of workpieces is positive or negative. For example, in the workpiece cutting processing device of item 13 of the patent application, the control unit performs the following control to perform cutting: The sum of the θ is set to -5°≦θ ₁ +θ ₂ +…+θ _n ≦ 5°. For example, in the workpiece cutting processing device of Item 14 of the patent application, the control unit performs the following control to perform cutting: The sum of the θ is set to -5°≦θ ₁ +θ ₂ +...+θ _n ≦ 5°. For example, if the workpiece cutting processing device in any one of the patented claims 13 to 16 is applied for, the control unit performs the following control to perform cutting: The sum of the θ is set to θ ₁ + θ ₂ +… +θ _n =0°. If a workpiece cutting and processing device is applied for in any one of items 13 to 16 of the patent scope, the cutting and processing device will cut the first crystal ingot and the second crystal ingot that are the plurality of workpieces, The control unit implements the following control to perform cutting: use a single crystal ingot with a central axis direction of the >111> direction as the first ingot, and set the cutting direction when cutting the first crystal ingot with a line. The angle θ ₁ offset from the >110> direction is in the range of 0°≦θ ₁ ≦30°; use a single crystal ingot with the central axis direction in the >111> direction as the second ingot and cut it with a line The cutting direction of the second crystal ingot is set such that the angle θ ₂ offset from the >110> direction is -30°≦θ ₂ ≦0°. For example, the workpiece cutting and processing device of claim 17, wherein the cutting and processing device cuts the first crystal ingot and the second crystal ingot that are the plurality of workpieces, the control unit performs the following control to perform the cutting : Use a single crystal ingot with the central axis direction as the >111> direction as the first ingot, and set the cutting direction when cutting the first crystal ingot with a line to an angle θ offset from the >110> direction. ₁ is the range of 0°≦θ ₁ ≦30°; use a single crystal ingot with the central axis direction >111> as the second ingot, and use a line to cut the second ingot in the cutting direction The angle θ ₂ offset from the >110> direction is set to -30°≦θ ₂ ≦0°. If the workpiece cutting and processing device in any one of items 13 to 16 of the patent scope is applied for, and the cutting and processing device cuts the first crystal ingot and the second crystal ingot that are the plurality of workpieces, the control unit implements Cutting is performed under the following control: Use a single crystal ingot with a central axis direction of >111> as the first ingot, and set the cutting direction when cutting the first crystal ingot with a line to >110> The angle θ ₁ of the direction shift is -30°≦θ ₁ ≦30°; and the crystal ingot whose central axis direction is >100> is used as the second crystal ingot. For example, the workpiece cutting and processing device of claim 17, wherein the cutting and processing device cuts the first crystal ingot and the second crystal ingot that are the plurality of workpieces, the control unit performs the following control to perform the cutting : Use a single crystal ingot with the central axis direction as the >111> direction as the first ingot, and set the cutting direction when cutting the first crystal ingot with a line to an angle θ offset from the >110> direction. ₁ means -30°≦θ ₁ ≦30°; and the crystal ingot whose central axis direction is >100> is used as the second crystal ingot.

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