JP2020138304A - Workpiece cutting method and workpiece cutting device - Google Patents

Abstract

To provide a workpiece cutting method in which cutting is realized with little deterioration in a Warp value.SOLUTION: In a workpiece cutting method for cutting multiple workpieces simultaneously at multiple spots into a wafer shape, at least one of the multiple workpieces is a single crystal ingot in which the center axis direction is a <111> direction. In the cutting method, cutting is performed by setting a cutting direction of each ingot, such that a total sum (θ1+θ2+...+θn) of each θ of the multiple workpieces satisfies -30°≤θ1+θ2+...+θn≤30°, wherein θ(°) is a shift angle from a <110> direction, in the cutting direction, when cutting the single crystal ingot with its center axis direction in the <111> direction by using a wire.SELECTED DRAWING: Figure 2

Description

The present invention relates to a work cutting process method and a work cutting process device.

In recent years, an increase in the size (larger diameter) of a wafer has been desired, and with this increase in size, a wire saw is exclusively used for cutting an ingot (for example, Patent Document 1). A wire saw is an ingot made of a brittle material such as silicon, glass, or ceramics while a wire (high-strength steel wire) is run at high speed and a slurry is hung on the wire saw. Hereinafter, the ingot is simply referred to as an ingot. It is a cutting device that cuts a large number of wafers at the same time by pressing it against it.

In cutting with a wire saw, first, a work plate that holds the work via the plate and a work holder that includes a holder body that supports the work plate hold the work to be cut. Subsequently, the work W is pressed against the wire row formed by attaching the work holder holding the work to the wire saw and winding the wire reciprocating in the axial direction around a plurality of grooved rollers. Cut into wafers. The wire saw cuts the work in the perpendicular direction of the work holder. Further, each wire forming the wire row is substantially orthogonal to the work holder.

When a wafer is cut out from a columnar ingot (hereinafter referred to as "work") having a crystal orientation such as a semiconductor silicon single crystal, cutting is performed with reference to the crystal plane of the work. In general, there is a deviation between the central axis (axis on the shape of the work) and the crystal axis orientation (crystal plane normal) of the cylindrical work, and it is necessary to correct the deviation and cut ( Patent Documents 1 and 2).

The following methods are known as methods for correcting the crystal axis orientation.
(1) When attaching the work to the jig set on the wire saw via the backing plate, rotate the work to adjust the orientation in the Y-axis direction, and adjust the orientation in the X-axis direction by the attachment angle to the work holder. (Referred to as "X-θ method").
(2) A method of adjusting the orientation inside the wire saw after setting the work holder to which the work is attached to the wire saw (referred to as "inner setup XY tilt method").
(3) When attaching the work to the jig to be set on the wire saw via the backing plate, adjust the tilt in the Y-axis direction by using a special jig, and the X-axis direction is the attachment angle to the work holder. A method of adjusting the orientation (referred to as "outer setup XY tilt method").

Further, when slicing a work having an axial direction <111> other than the axial direction <100>, the front and back surfaces of the cut wafer are (processed) depending on the cutting direction (wire cutting direction) when slicing the work. It is known that the damage difference changes (due to the resistance difference) and the slice quality (mainly the Warp value) fluctuates greatly (see Patent Document 3).

Note that FIG. 4 shows the definition of Warp. Warp is a shape parameter related to the deviation of the wafer from the center line surface, and is the maximum in-plane distance between the virtual center surface of the wafer that is not suction-fixed and the reference plane. Bow in the figure is an evaluation similar to Warp, but is a shape parameter of the distance between the center of the wafer and the reference plane. The measuring method is defined by JEIDA-43-1999 and ASTM F1530-94.

Japanese Unexamined Patent Publication No. 11-48238 Japanese Unexamined Patent Publication No. 2017-24145 Japanese Unexamined Patent Publication No. 2014-195025

Therefore, when adjusting the crystal orientation of the work in the Y-axis direction by rotating the work as in the above-mentioned (1) X-θ method, the cutting direction is the direction in which the slice quality is significantly deteriorated. In that case, the aim of the orientation was changed and the cutting was performed. For example, in the past, cutting was performed after shifting within the permissible range of the specifications.

However, when the orientation standard is strict, it is not possible to make adjustments to change the aim of this orientation, so it is not possible to cut a good product with a normal wire saw, and the XY tilt method ((2), (3) described above). ), Or a special jig that can be adjusted by the XY tilt method was used for cutting.

However, the wire saw corresponding to the XY tilt method as described in Patent Document 2 is generally expensive, and there is a problem that the orientation must be adjusted by the internal setup and the device productivity is low. Further, in the adjustment by the XY tilt method described in Patent Document 2, in the case of the specification of tilting greatly in the Y direction, the difference in the depth of cut becomes large depending on the position of the work, and a stable Warp value cannot be obtained. There was also.

The present invention has been made to solve the above problems, and even if the direction in which the Warp value is significantly deteriorated is the cutting direction of the work, a dedicated cutting device corresponding to the XY tilt method, which leads to high cost, is used. An object of the present invention is to provide a work cutting method and a work cutting device capable of realizing cutting with less deterioration of the Warp value with an X-θ type wire saw device without using a special jig or a special jig. And.

The present invention has been made to achieve the above object, and a plurality of grooves are formed on the outer surface at predetermined pitches and arranged at predetermined intervals so that the directions of rotation axes are parallel to each other. Wire guides and wires spirally wound around the grooves of the wire guides at a predetermined pitch form a wire row, and n (n ≧ 2) ingots are arranged in parallel as a plurality of workpieces for cutting. By installing and rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire travels in the axial direction, and the plurality of workpieces are simultaneously cut into a wafer shape at a plurality of locations. A method for cutting a work to be machined, wherein the work is a single crystal ingot having a central axis direction of <111> direction or <100> direction, and at least one of the plurality of works is The deviation angle of the cutting direction from the <110> direction when cutting a single crystal ingot having a central axis direction of <111> direction and a central axis direction of <111> direction with a wire is θ. When (°) is set (however, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is (0-11) with the counterclockwise direction as the positive direction. The deviation angles θ from the) direction, the (-110) direction, and the (10-1) direction are -30 ° ≤ θ ≤ + 30 ° with the clockwise direction as the positive direction, and the central axis direction is <. The θ of the single crystal ingot having the 100> direction is 0 ° regardless of the cutting direction), and the sum of θ of each of the plurality of workpieces (θ ₁ + θ ₂ + ... + θ _n ) is
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
Provided is a cutting processing method for cutting by setting the cutting direction of each ingot so as to be.

According to such a cutting processing method, productivity can be achieved with an XY-θ method wire saw device without using a dedicated cutting device or a dedicated special jig that supports the XY tilt method, which leads to high cost. It is possible to suppress the deterioration of the Warp value while improving the above.

At this time, a cutting processing method may be used in which the cutting direction of each ingot is set so that all the θs of the plurality of workpieces are not positive or negative.

Thereby, the deterioration of the Warp value can be suppressed more effectively.

At this time, the sum of the θ is
-5 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 5 °
More preferably, θ ₁ + θ ₂ + ... + θ _n = 0 °
It is possible to use a cutting processing method in which cutting is performed by setting the above.

Thereby, the deterioration of the Warp value can be suppressed more effectively.

At this time, the plurality of workpieces are used as a first ingot and a second ingot, and as the first ingot, a single crystal ingot having a central axis direction <111> is used, and the first ingot is wired. The deviation angle θ _{1 in} the cutting direction from the <110> direction when cutting with is set to be in the range of 0 ° ≤ θ ₁ ≤ 30 °, and the central axis direction is <110 as the second ingot. When a single crystal ingot having a 111> direction is used and the second ingot is cut with a wire, the deviation angle θ _{2 in} the cutting direction from the <110> direction is −30 ° ≦ θ ₂ ≦ 0 °. It can be a cutting processing method in which cutting is performed by setting the above.

As a result, deterioration of the Warp value can be suppressed more reliably.

At this time, the plurality of workpieces are used as a first ingot and a second ingot, and as the first ingot, a single crystal ingot having a central axis direction <111> is used, and the first ingot is wired. The deviation angle θ _{1 in} the cutting direction from the <110> direction when cutting with is set to -30 ° ≤ θ ₁ ≤ 30 °, and the central axis direction is <100 as the second ingot. > It can be a cutting process method in which cutting is performed using an ingot having a direction.

As a result, deterioration of the Warp value can be suppressed more reliably.

At this time, in the first ingot or the second ingot, the cutting process may be such that the length and diameter of the second ingot is equal to or larger than the length and diameter of the first ingot.

As a result, it is possible to more reliably suppress the deterioration of the Warp value while further improving the productivity.

Further, in the present invention, a plurality of wire guides are arranged at predetermined intervals so that the directions of rotation axes are parallel to each other, and grooves are formed on the outer surface at a predetermined pitch, and the grooves of the wire guides. A wire row formed by wires wound spirally at a predetermined pitch, and n work holding portions for holding each of n (n ≧ 2) ingots used as a plurality of workpieces for cutting. A control unit is provided, and by rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire is traveling in the axial direction, and the plurality of workpieces are simultaneously pressed at a plurality of locations. It is a cutting processing device in which a control unit controls to cut into a wafer shape, and the control unit is a work piece from a single crystal ingot having a central axis direction of <111> direction or <100> direction. Along with selecting
At least one of the plurality of workpieces is a single crystal ingot having a central axis direction of <111>, and a cutting direction when cutting a single crystal ingot having a central axis direction of <111> with a wire. When the deviation angle from the <110> direction is θ (°) (however, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is counterclockwise. The direction is the positive direction, and the deviation angle θ from the (0-11) direction, the (-110) direction, and the (10-1) direction is the clockwise direction as the positive direction, and the deviation angle θ is -30 ° ≤ θ ≤ + 30 °. Further, the θ of the single crystal ingot having the central axis direction <100> is 0 ° regardless of the cutting direction), and the sum of the θ of each of the plurality of workpieces (θ ₁ + θ ₂ +).・ ・ ・ + Θ _n ),
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
Provided is a work cutting apparatus for setting the cutting direction of each ingot and controlling the cutting so as to be performed.

According to such a work cutting machine, the X-θ type wire saw device, which leads to low cost, can suppress the deterioration of the Warp value while maintaining the productivity.

At this time, the control unit sets a cutting direction of each ingot so that all the θs of the plurality of works are not positive or negative, and controls the work cutting device to perform cutting. Can be provided.

As a result, deterioration of the Warp value can be suppressed more effectively.

At this time, in the control unit, the sum of the θ is
-5 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 5 °
More preferably
θ ₁ + θ ₂ + ・ ・ ・ + θ _n = 0 °
It can be a work cutting apparatus that is set so as to be and is controlled to perform cutting.

As a result, the deterioration of the Warp value can be suppressed more effectively.

At this time, the cutting processing apparatus cuts the first ingot and the second ingot as the plurality of works, and the control unit uses the first ingot as the first ingot in the central axis direction <111>. Using a single crystal ingot having a direction, the cutting direction θ ₁ when cutting the first ingot with a wire is set so that the deviation angle from the <110> direction is in the range of 0 ° ≤ θ ₁ ≤ 30 °. As the second ingot, a single crystal ingot having a central axis direction of <111> is used, and the cutting direction θ ₂ when the second ingot is cut with a wire is set from the <110> direction. It can be used as a work cutting apparatus that controls the cutting by setting the deviation angle of -30 ° ≤ θ ₂ ≤ 0 °.

As a result, deterioration of the Warp value can be suppressed more reliably.

At this time, the cutting processing apparatus cuts the first ingot and the second ingot as the plurality of works, and the control unit serves as the first ingot in the central axis direction <111>. Using a single crystal having a direction, the cutting direction θ ₁ when cutting the first ingot with a wire is set so that the deviation angle from the <110> direction is -30 ° ≤ θ ₁ ≤ 30 °. Then, as the second ingot, it is possible to use an ingot for cutting the work, which is controlled so as to perform cutting using an ingot having a central axis direction of <100>.

As a result, deterioration of the Warp value can be suppressed more reliably.

As described above, according to the work cutting processing method of the present invention, in cutting a single crystal ingot having a <111> direction, Warp is performed at low cost and while improving productivity without performing complicated work. It is possible to suppress the deterioration of the value. Further, according to the work cutting processing apparatus of the present invention, in cutting a single crystal ingot having a <111> direction, the Warp value is deteriorated while improving productivity at low cost without performing complicated work. Can be suppressed.

The schematic diagram of the work cutting apparatus which concerns on this invention is shown. It is explanatory drawing of the Warp value deterioration suppression. The relationship between the deviation angle θ from the <110> direction of the cutting direction and the Warp value of the wafers obtained in Reference Example 1, Examples 1-3, 6 and Comparative Example 1-3 is shown. The definition of Warp is shown. A conceptual diagram of a cross section perpendicular to the axial direction of a work (single crystal ingot) having an axial orientation <111> is shown. The definition of the cutting direction θ of the work (single crystal ingot) having the axial orientation <111> is shown. The dependence of the Warp value of the wafer after cutting in the cutting direction is shown. The cutting time dependence of the Warp value (relative value) when one work having the axial direction <111> is cut with the deviation angle of the cutting direction from the <110> direction as 30 ° is shown.

Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

As described above, even when the cutting direction is the direction in which the Warp value deteriorates significantly, the X-θ method wire saw is used without using a dedicated cutting device or a dedicated special jig that supports the XY tilt method. There has been a demand for a work cutting method and a work cutting device capable of realizing cutting with less deterioration of the Warp value in the device.

As a result of diligent studies on the above problems, the present inventors have arranged a plurality of grooves at predetermined pitches on the outer surface, which are arranged at predetermined intervals so that the directions of rotation axes are parallel to each other. N (n ≧ 2) ingots are installed in parallel as a plurality of workpieces for forming a wire row by a wire guide and a wire spirally wound around the groove of the wire guide at a predetermined pitch and cutting the wire. Then, by rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire travels in the axial direction, and the plurality of workpieces are simultaneously cut into a wafer shape at a plurality of locations. The work is a single crystal ingot having a central axis direction of <111> direction or <100> direction, and at least one of the plurality of works is the center. A single crystal ingot having an axial direction of <111> is defined as a single crystal ingot having a central axial direction of <111>, and the deviation angle of the cutting direction from the <110> direction when cutting the single crystal ingot with a wire is θ (). (°) (However, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is (0-11) with the counterclockwise direction as the positive direction. The deviation angle θ from the direction, the (-110) direction, and the (10-1) direction is -30 ° ≤ θ ≤ + 30 ° with the clockwise direction as the positive direction, and the central axis direction is <100. The θ of a single crystal ingot having a> direction is 0 ° regardless of the cutting direction.),
The sum of θ (θ ₁ + θ ₂ + ... + θ _n ) of each of the plurality of workpieces is
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
By the cutting processing method that sets the cutting direction of each ingot and cuts, the X-θ method can be used without using a dedicated cutting device or special jig that supports the XY tilt method. The present invention has been completed by finding that the wire saw device can suppress the deterioration of the Warp value while improving the productivity.

Further, a plurality of wire guides are arranged at predetermined intervals so that the directions of rotation axes are parallel to each other, and grooves are formed on the outer surface at a predetermined pitch, and the grooves of the wire guides are formed at a predetermined pitch. A wire row formed by spirally wound wires, n work holding portions for holding each of n (n ≧ 2) ingots used as a plurality of workpieces for cutting, a control unit, and a control unit. By rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire travels in the axial direction, and the plurality of workpieces are simultaneously cut into a wafer shape at a plurality of locations. A cutting machine in which the control unit controls the work so that the work is processed, and the control unit selects the work from a single crystal ingot having a central axis direction of <111> direction or <100> direction. , At least one of the plurality of workpieces is a single crystal ingot having a central axis direction of <111>, and the cutting direction of the single crystal ingot having a central axis direction of <111> is cut with a wire. , When the deviation angle from the <110> direction is θ (°) (however, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is counterclockwise. The rotation direction is the positive direction, and the deviation angles θ from the (0-11) direction, the (-110) direction, and the (10-1) direction are the clockwise direction as the positive direction, and the deviation angle θ is -30 ° ≤ θ ≤ +30. In addition, θ of a single crystal ingot having a central axis direction of <100> is 0 ° regardless of the cutting direction), and the sum of θ of each of the plurality of workpieces (θ ₁ + θ _2). ＋ ・ ・ ・ ＋ θ _n )
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
By using a work cutting device that sets the cutting direction of each ingot and controls it to cut, it does not use a dedicated cutting device or special jig that supports the XY tilt method. In addition, they have found that an X-θ type wire saw device can suppress deterioration of the Warp value while improving productivity, and have completed the present invention.

As described above, the present invention provides a low-cost XY-type wire saw device without using a dedicated cutting device or a dedicated special jig that supports the XY tilt method, which leads to high cost. It is used to improve productivity and suppress deterioration of the Warp value, but it goes without saying that the apparatus used for cutting is not limited to the XY-θ method and can also be implemented by the XY tilt method. ..

Hereinafter, description will be made with reference to the drawings.

As described above, when slicing a work having an axial orientation <111>, damage is caused to the front and back surfaces of the cut wafer (due to the difference in processing resistance) depending on the cutting direction (wire cutting direction) when slicing the work. It was known that the difference changed and the slice quality (mainly the Warp value) fluctuated greatly. The following description exemplifies a work using a silicon single crystal as the work, but the work is not limited to the silicon single crystal as long as the work has an axial orientation <111>.

FIG. 5 shows a conceptual diagram of a cross section perpendicular to the axial direction of a silicon single crystal having an axial orientation <111>. For example, when the cutting direction by the wire saw is the direction indicated by the solid arrow direction shown in FIG. 5, the damage difference between the front and back surfaces of the wafer is small, and the influence on the Warp value is small. However, when the cutting direction is the direction represented by the broken line arrow in FIG. 5, the damage difference between the front and back surfaces of the wafer becomes large, and the Warp value greatly deteriorates.

The direction of the solid line arrow in FIG. 5 is crystallographically the <110> direction, and when the term "<110> direction" is used in the present specification, the direction is crystallographically as shown by the solid line arrow in FIG. Includes orientation equivalent to.

Here, the definition of the cutting direction of the single crystal ingot having the <111> direction and the <100> direction as the central axis direction will be described with reference to FIG. In the present specification, the “deviation angle θ (°) from the <110> direction” means the deviation angle from the <110> direction. At this time, with respect to the symbols (+ direction, − direction) indicating the direction of the deviation angle, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is counterclockwise. The direction is the positive direction, and the deviation angle θ from the (0-11) direction, the (-110) direction, and the (10-1) direction is the clockwise direction. Further, it is set to −30 ° ≦ θ ≦ 30 °.

For example, when the arrow A shown in FIG. 6 is the cutting direction, the deviation angle from the (1-10) direction is the counterclockwise direction as the positive direction, so that the deviation angle is from the (1-10) direction to the negative (minus) direction. It is said that the deviation is 15 °, and the deviation angle from the <110> direction is "-15 °". Further, when the arrow B shown in FIG. 6 is the cutting direction, it means that the deviation is 20 ° from the (1-10) direction to the positive (plus) direction, and the deviation angle from the <110> direction is "+ 20 °". There is. When the arrow C shown in FIG. 6 is the cutting direction, the deviation angle from the (0-11) direction is a positive direction in the clockwise direction, so that the deviation angle is 15 ° from the (0-11) direction to the positive (plus) direction. It is said that the deviation angle from the <110> direction is "+ 15 °". The deviation angle θ is −30 ° ≦ θ ≦ + 30 ° due to the symmetry of the crystal orientation. Further, in FIG. 6, the (1-10) direction, the (-101) direction, and the (01-1) direction are directions in which the processing resistance characteristics in the cutting direction are the same due to the symmetry of the crystal. The sign of the deviation angle θ with respect to these directions is the same. On the other hand, the (0-11) direction, the (-110) direction, and the (10-1) direction have different processing resistance characteristics in the cutting direction from the (1-10) direction (reverse). Therefore, the sign of the deviation angle θ from the (0-11) direction, the (-110) direction, and the (10-1) direction, and the (1-10) direction, the (-101) direction, and (01). -1) The sign of the deviation angle θ from the direction is reversed. The machining resistance characteristics in the cutting direction will be described in detail later.

To give a specific example, the direction (1-21) shown in FIG. 5 is + 30 ° from the direction (1-10) when all the positive and negative directions of θ are considered as the same reference (the same rotation direction has the same sign). At the same time, it can be viewed as -30 ° from the (0-11) direction. However, since the processing resistance characteristics in the cutting direction are different (reverse) between the (1-10) direction and the (0-11) direction, the (1-21) direction is defined as (1) based on the definition of the present invention. The deviation angle θ from the -10) direction is expressed as + 30 °, and the deviation angle θ from the (0-11) direction is expressed as + 30 °.

Further, for a single crystal ingot having a central axis direction of <100>, as will be described later, since there is no difference in damage to the wafer on the front and back surfaces (due to the difference in processing resistance) depending on the cutting direction, it is related to the cutting direction. Let θ = 0 °. In other words, in the case of a single crystal ingot whose central axis direction is the <100> direction, θ = 0 ° is defined regardless of the cutting direction.

Here, FIG. 7 shows the cutting direction dependence of the Warp value of the wafer after cutting when a silicon single crystal having an axial orientation <111> investigated by the present inventor is sliced. The horizontal axis shows the deviation angle θ [°] from the <110> direction of the cutting direction, and the vertical axis shows the Warp value (relative value). As shown in FIG. 7, when the cutting direction is 0 °, the Warp value is the best, and it can be seen that the Warp value deteriorates (increases) as the deviation angle increases.

The present inventor further investigated the difference in Warp value depending on the cutting time (that is, the cutting speed). FIG. 8 shows the relationship between the cutting time and the Warp value (relative value) when the deviation angle θ from the cutting direction <110> is set to θ = + 30 ° for the silicon single crystal having the axial orientation <111>. It is a figure shown. As shown in FIG. 8, even when the cutting direction is set to a direction in which the deviation angle from the <110> direction is + 30 °, the Warp value is deteriorated by increasing the cutting time (lowering the cutting speed). It can be suppressed, but the decrease in productivity is significant.

As a result of diligent investigation, the present inventor cuts a plurality of workpieces at the same time even when the cutting direction of the workpiece is set to the direction in which the Warp value is significantly deteriorated (θ direction), and the cutting direction or the crystal axis orientation thereof. As a result, it was found that by adopting a specific combination, deterioration of the Warp value can be prevented and productivity can be remarkably improved while using a simple device.

First, a wire saw, which is a work cutting processing apparatus according to the present invention, will be described with reference to FIG. FIG. 1 shows an example of a wire saw of a work cutting processing apparatus according to the present invention. The upper view of FIG. 1 is a view seen from the front, and the lower figure is a view seen from above. The wire saws 100 are arranged at predetermined intervals so that their rotation axes are parallel to each other, and a plurality of cylindrical wire guides 1, 1'with grooves formed on the outer surface at a predetermined pitch, respectively. It is possible to hold each of the wire row 3 formed by the wires 2 spirally wound around the groove of the wire guide at a predetermined pitch and the plurality of workpieces (ingots) 4, 4'for cutting. , The number of work holding portions 5, 5'corresponding to the number of works is provided. During operation (work cutting), a plurality of workpieces 4 and 4'are pressed against the wire row 3 while the wire 2 is driven in the axial direction by rotating the wire guides 1 and 1', and the plurality of workpieces are pressed. It is controlled and operated by the control unit 6 (omitted in the lower figure of FIG. 1) so as to cut the 4 and 4'in a wafer shape at a plurality of points at the same time.

The wire saw 100, which is a work cutting processing apparatus according to the present invention, is provided with a plurality of work holding portions 5, 5'such as clamp portions, which correspond to the number of workpieces to be cut, for example, two or more. It has a structure that allows workpieces (ingots) 4, 4'to be arranged in parallel and cut at the same time. The control unit 6 sets the cutting direction of a plurality of workpieces as described later, and controls the cutting processing apparatus so as to perform the cutting processing. As the work cutting device, either a free abrasive grain type device or a fixed abrasive grain type device can be applied.

Next, a method for cutting the work according to the present invention will be described. A plurality of workpieces (ingots) 4, 4'are arranged in parallel and cut at the same time, and at least one of the plurality of workpieces is a single crystal ingot having a central axis direction of <111>.

After accepting the work to be processed, the crystal characteristics of the work are measured and data such as the crystal axis orientation is obtained. After that, characteristic values such as the crystal orientation (direction) of the outer circumference of the work and orientation correction values are calculated. This orientation correction value is a correction value or the like that is tilted at the time of cutting based on the difference between the orientation of the work and the specifications of the work (the surface orientation of the wafer to be obtained by cutting). Next, based on the obtained characteristic values, the combination of workpieces to be cut is selected and the cutting direction is set (described later).

Finally, adjustment is performed using the set cutting direction and the calculated correction value, and the work is adhered to the work holder of the work holding portion to be held and attached to the wire saw. Perform the same procedure for multiple workpieces. Then, a plurality of workpieces are cut at the same time.

Next, the setting of the cutting direction of the work to be cut will be described. For a plurality of workpieces to be cut at the same time, the sum of the deviation angles θ _n (°) in the cutting direction of each workpiece from the <110> direction is -30 ° or more and 30 ° or less (-30 ° ≤ θ ₁ + θ _2). The cutting direction of each work is set so that + ··· + θ _n ≦ 30 °). If the sum of the deviation angles θ (°) from the <110> direction is less than −30 ° or greater than + 30 °, deterioration of the Warp value cannot be suppressed. The total sum of θ _n (°) is more preferably −5 ° ≤ θ ₁ + θ ₂ + ··· + θ _n ≦ 5 °, and θ ₁ + θ ₂ + ··· + θ _n = 0 °. More preferred.

By setting the cutting direction in such a range, it is possible to realize a cutting process in which the deterioration of the Warp value is small even if the direction in which the Warp value deteriorates significantly (θ direction) must be the cutting direction of the work. .. As a result, it is possible to realize cutting with less deterioration of the Warp value with the XY-θ method wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the expensive XY tilt method. ..

By setting as described above, even if the direction in which the Warp value is significantly deteriorated (θ direction) must be the cutting direction of the work, the reason why the deterioration of the Warp value can be suppressed is considered as follows. When cutting only one work, as already mentioned, the damage difference between the front and back surfaces of the cut wafer (due to the processing resistance difference) changes depending on the cutting direction (wire cutting direction) when slicing the work. However, the slice quality (mainly the Warp value) fluctuates greatly. On the other hand, when a plurality of workpieces are cut at the same time as in the present invention, the workpiece in the cutting direction in which the Warp value is less likely to deteriorate functions as a guide for the wire, so that the front and back surfaces of the wafer to be cut out are formed. It is presumed that the damage difference (due to the processing resistance difference) is suppressed.

In particular, for all of the plurality of workpieces, the above effect is obtained by setting the cutting direction of each ingot so that the deviation angle θ (°) from the <110> direction of the cutting direction does not become positive or negative. Will be higher. In other words, if the cutting direction is set so that the sign of the deviation angle θ _n (°) from the <110> direction of the cutting direction is a mixture of positive and negative, the cutting process is more effective.

This will be described with reference to FIG. In FIG. 2, when cutting a work (single crystal ingot) whose central axis direction is the <111> direction, the deviation angles θ from the (1-10) direction of the work cutting direction are + 30 ° and −30 °. It is a drawing showing the difference between cases. As shown in "In the case of single cutting" in the upper part of FIG. 2, for example, in the case of a workpiece with θ = -30 °, when cutting alone (only one), the wire is cut due to the difference in cutting resistance (machining resistance). The direction of travel shifts to the left, the maximum shift occurs at the center of the work, and there is a tendency to return so that it shifts again in the direction of weak machining resistance (right side). As a result, the wafer obtained by cutting has a warped shape (that is, a large Warp value) as shown in the figure. On the other hand, in the case of a workpiece with θ = + 30 °, since it has machining resistance characteristics in the cutting direction symmetrical to that in the case of a workpiece with θ = -30 °, the shape of the wafer obtained by cutting can also be changed. It is symmetrical (the warp direction is opposite) to the case of θ = -30 °. As described above, it is considered that the Warp value is deteriorated due to the influence of the strength of the processing resistance of the crystal plane. Taking the symmetry of the crystal into consideration, the (1-10) direction, the (-101) direction, and the (01-1) direction are used as the reference of the deviation angle, and the (0-11) direction, When the (-110) direction and the (10-1) direction are used as the reference of the deviation angle, the relationship between the deviation direction in the cutting direction and the warp direction is symmetrical (reverse). For example, the degree of warpage when cutting from a direction deviated by 15 ° counterclockwise from the (1-10) direction and when cutting from a direction deviated by 15 ° counterclockwise from the (0-11) direction. Is about the same, but the direction of warpage is opposite.

On the other hand, when the cutting direction of the work is set so that the deviation angles θ from the (1-10) direction are + 30 ° and -30 °, the two works are installed in parallel and the cutting process is performed at the same time. As shown in "In the case of cutting", the directions of machining resistance of each work act to cancel each other, and as a result, deterioration of the shape of the wafer obtained by cutting, that is, deterioration of Warp is suppressed. it is conceivable that.

From this point of view, a single crystal ingot having a central axis direction of <111> is used as the first ingot and the second ingot, and the first ingot is the <cutting direction when cutting with a wire. The deviation angle θ ₁ from the 110> direction is set to be in the range of 0 ° ≤ θ ₁ ≤ 30 °, and the second ingot is set from the <110> direction of the cutting direction when cutting with a wire. If cutting is performed by setting the deviation angle θ ₂ of -30 ° ≤ θ ₂ ≤ 0 °, the effect of canceling the processing resistance is effectively exhibited, and a wafer having a better Warp value can be obtained. be able to.

As a result of repeated studies by the present inventor, the Warp value deteriorates even when the deviation angle θ of the work cutting direction from the <110> direction is a combination other than the combination of works having different signs (positive and negative). It was found that it can suppress. In this case, it was clarified by the experiment of the present inventor that the Warp value is not only averaged but also more strongly influenced by the work in which the Warp value does not deteriorate (decrease).

In the combination of cutting directions described above, it is preferable that the reference crystal direction of the deviation angle θ in the cutting direction is the same crystal direction for a plurality of ingots, but the reference crystal directions are different. Needless to say, it is also possible to adopt the cutting direction. For example, the cutting direction of the first ingot is set to the deviation angle θ ₁ from the (1-10) direction in FIG. 6, and the cutting direction of the second ingot is similarly set to the deviation angle θ from the (1-10) direction. it may be a _2, the cutting direction of the second ingot (- 101) or the offset angle theta ₂ of the direction, it is also possible to shift the angle theta ₂ from (0-11) direction ..

As described above, even if the deviation angle θ of the work cutting direction from the <110> direction is a combination other than the works having different signs (positive and negative), deterioration of the Warp value can be suppressed. For example, a wafer having a good Warp value can be obtained even when one of the single crystal ingots whose central axis direction has the <111> direction has a deviation angle θ of the cutting direction from the <110> direction of θ = 0 °. be able to. As shown in FIG. 7, when the deviation angle θ of the cutting direction from the <110> direction is θ = 0 °, the Warp value does not deteriorate. When such a work is adopted as one of the works for simultaneous cutting, the effect of suppressing the deterioration of Warp becomes higher.

Yet another example of a combination of workpieces will be described. As the first ingot, a single crystal ingot having a central axis direction of <111> is used, and the deviation angle θ ₁ of the cutting direction from the <110> direction is set to −30 ° ≦ θ ₁ ≦ 30 °. Then, as the second ingot, a wafer having a good Warp value can also be cut by using a single crystal ingot having a central axis direction of <100> (in this case, θ ₂ = 0 ° according to the definition). Can be obtained. A single crystal ingot having a central axis direction of <100> does not cause deterioration of the Warp value even when cutting is performed independently. In this case, when a single crystal ingot having a central axis direction of <111> is used as the second ingot described above and the cutting direction is set to a deviation angle θ from the <110> direction as θ = 0 °. Similarly, the effect of suppressing the deterioration of Warp becomes higher.

As the second ingot, a single crystal ingot having a central axis direction of <111> is used, and the deviation angle θ ₂ from the <110> direction in the cutting direction is set to θ ₂ = 0 °, or the central axis direction. When a single crystal ingot having a <100> direction (θ ₂ = 0 ° from the definition) is used, and when a cutting direction or ingot that does not deteriorate the Warp value even when cut alone is adopted, the second ingot The length and diameter are preferably greater than or equal to the length and diameter of the other ingot. When multiple workpieces with different shapes such as length and diameter are cut at the same time, the larger workpiece will be cut independently for a period of time, but the Warp value will be obtained even if the larger workpiece is cut alone. If a cutting direction or an ingot that does not deteriorate is adopted, it is possible to obtain a work having a good Warp value for all the workpieces to be cut.

For reference, the representative values of the cutting processing conditions are shown in Table 1.

Hereinafter, the present invention will be described in detail with reference to examples, but this does not limit the present invention.

(Reference example 1)
Using a silicon single crystal having an axial direction of <111>, cutting was performed with the deviation angle θ of the cutting direction from the <110> direction as the direction of θ = 0 °, and the second ingot was not used. The cutting time in Reference Example 1 and the Warp value of the wafer obtained in Reference Example 1 are used as reference values (1.0) as reference values for comparative evaluation of the following Examples and Comparative Examples.
(Reference example 2)
Cutting was performed using a silicon single crystal having an axial direction <111>, the deviation angle θ of the cutting direction from the <110> direction was set to θ = 0 °, and the cutting time was 1.5 times that of Reference Example 1. .. The second ingot was not used. The Warp value of the wafer after cutting was 0.8.

(Example 1)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to θ ₁ = + 10 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₂ from the <110> direction in the cutting direction was set to θ ₂ = 0 °. Then, these two workpieces were arranged in parallel and cut at the same time. The sum of θ (θ ₁ + θ ₂ ) is + 10 °. In Examples 1-6, the cutting time was 1.5 times that of Reference Example 1. The Warp value of the wafer after cutting was 1.0 when it was cut out from the first ingot and 1.0 when it was cut out from the second ingot.

(Example 2)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle of the cutting direction from the <110> direction was set to θ ₁ = + 20 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle of the cutting direction from the <110> direction was set to θ ₂ = 0 °. Then, these two workpieces were arranged in parallel and cut at the same time. The sum of θ (θ ₁ + θ ₂ ) is + 20 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 1.8 for the wafer cut out from the first ingot and 1.2 for the wafer cut out from the second ingot.

(Example 3)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to θ ₁ = + 30 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₂ from the <110> direction in the cutting direction was set to θ ₂ = 0 °. Then, the two workpieces were arranged in parallel and cut at the same time. The sum of θ (θ ₁ + θ ₂ ) is + 30 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 1.9 for the wafer cut out from the first ingot and 1.2 for the wafer cut out from the second ingot.

(Example 4)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to θ ₁ = + 30 °. Further, as the second ingot, an axial orientation <100> crystal was used. Then, the two workpieces were arranged in parallel and cut at the same time. The sum of θ (θ ₁ + θ ₂ ) is + 30 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 1.9 for the wafer cut out from the first ingot and 1.2 for the wafer cut out from the second ingot.

(Example 5)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to θ ₁ = + 30 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₂ from the <110> direction in the cutting direction was set to θ ₂ = −30 °. Then, the two workpieces were arranged in parallel and cut at the same time. The sum of θ (θ ₁ + θ ₂ ) is 0 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 1.5 for the wafer cut out from the first ingot and 1.5 for the wafer cut out from the second ingot.

(Example 6)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to θ ₁ = 0 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the cutting direction was set to a deviation angle θ ₂ from the <110> direction as θ ₂ = 0 °. Then, the two workpieces were arranged in parallel and cut at the same time. The sum of θ (θ ₁ + θ ₂ ) is 0 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 1.0 when it was cut out from the first ingot and 1.0 when it was cut out from the second ingot.

(Comparative Example 1)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to θ = + 10 °. Other than this, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the wafer after cutting was 4.0.

(Comparative Example 2)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to θ = + 20 °. Other than this, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the wafer after cutting was 7.0.

(Comparative Example 3)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to θ = + 30 °. Other than this, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the wafer after cutting was 8.2.

(Comparative Example 4)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to θ = −30 °. Other than this, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the wafer after cutting was 8.8.

(Comparative Example 5)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to θ = + 30 °. In addition, the cutting time was set to 1.5 times that of Reference Example 1, and the cutting conditions were the same as those of Reference Example 1 except for this (the second ingot was not used). The Warp value of the wafer after cutting was 3.7.

(Comparative Example 6)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to the direction of θ = + 30 °. In addition, the cutting time was double that of Reference Example 1. Other than this, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the wafer after cutting was 2.1.

(Comparative Example 7)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ of the cutting direction from the <110> direction was set to the direction of θ = + 30 °. Moreover, the cutting time was set to three times that of Reference Example 1. Other than this, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the wafer after cutting was 1.5.

(Comparative Example 8)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to the direction of θ ₁ = + 30 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₂ from the <110> direction in the cutting direction was set to θ ₂ = + 10 °. The sum of θ (θ ₁ + θ ₂ ) is + 40 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 4.0 for the one cut out from the first ingot and 2.0 for the one cut out from the second ingot.

(Comparative Example 9)
As the first ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₁ from the <110> direction in the cutting direction was set to θ ₁ = −30 °. Further, as the second ingot, a silicon single crystal having an axial direction <111> was used, and the deviation angle θ ₂ from the <110> direction in the cutting direction was set to θ ₂ = −10 °. The sum of θ (θ ₁ + θ ₂ ) is −40 °. Other than this, the cutting conditions were the same as in Example 1. The Warp value of the wafer after cutting was 3.8 for the wafer cut out from the first ingot and 2.1 for the wafer cut out from the second ingot.

Table 2 shows the conditions and experimental results of Examples, Reference Examples, and Comparative Examples.

FIG. 3 shows the wafers obtained in Reference Example 1, Examples 1-3, 6 and Comparative Example 1-3 among the data shown in Table 2 from the <110> direction of the cutting direction of the single crystal ingot. The relationship between the deviation angle θ and the Warp value is shown. The Warp value is shown as a relative value with the value of Reference Example 1 as a reference (1.0). For the examples, ingot 1 and ingot 2 were plotted separately. As shown in FIG. 3, the Warp value of the wafer cut out from the ingot 1 of the example was significantly lower than the Warp value of the wafer cut out from the ingot of the comparative example. Further, the ingot 2 of Example 1 (the one having a deviation angle θ = 0 ° from the <110> direction of the cutting direction) was equivalent to the Warp value of Reference Example 1 and did not deteriorate. In Example 4, since the types of ingot 2 are different, they are not plotted on the same graph. However, as is clear from Table 2, the Warp value of the ingot 2 itself hardly deteriorates, while the Warp of the ingot 1 is not deteriorated. It was confirmed that the deterioration of the value can be suppressed.

Further, as is clear from Table 2, although the cutting time in Example 1-6 is 1.5 times that in Reference Example 1, since two pieces are cut at the same time, substantial cutting per work piece is performed. The time is 0.75 times. That is, it can be seen that the productivity could be improved while preventing the deterioration of the Warp value.

Further, as is clear by comparing the results of Examples 3 and 4 and Comparative Example 5, as the second ingot, the Warp value does not deteriorate even when the ingot is cut alone, or the Warp value. It was confirmed that when an ingot that did not deteriorate was used, the deterioration of the Warp value after cutting of the first ingot was suppressed.

As described above, even when there is only one work, deterioration of the Warp value can be suppressed by lengthening the cutting time (lowering the cutting speed) (FIG. 8, Comparative Example 4-7). However, as is clear from comparing Example 5 and Comparative Example 7, in Example 5, a wafer having a Warp value equivalent to that of Comparative Example 7 is quadrupled in productivity (cutting speed is doubled, the number of cuts is doubled). It can be seen that it can be manufactured with.

The present invention is not limited to the above embodiment. The above-described embodiment is an example, and any object having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same action and effect is the present invention. Is included in the technical scope of.

1,1'... wire guide, 2 ... wire, 3 ... wire row,
4,4'... work (ingot), 5,5' ... work holding unit, 6 ... control unit,
100 ... Work cutting device (wire saw).

Further, in the present invention, a plurality of wire guides are arranged at predetermined intervals so that the directions of rotation axes are parallel to each other, and grooves are formed on the outer surface at a predetermined pitch, and the grooves of the wire guides. A wire row formed by wires wound spirally at a predetermined pitch, and n work holding portions for holding each of n (n ≧ 2) ingots used as a plurality of workpieces for cutting. A control unit is provided, and by rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire is traveling in the axial direction, and the plurality of workpieces are simultaneously pressed at a plurality of locations. a cutting apparatus in which the control unit performs control so as to cut into wafers, wherein the control unit, the central axis direction <111> direction, or from a single crystal ingot having a <100> direction, the While selecting the work,
At least one of the plurality of workpieces is a single crystal ingot having a central axis direction of <111>, and a cutting direction when cutting a single crystal ingot having a central axis direction of <111> with a wire. When the deviation angle from the <110> direction is θ (°) (however, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is counterclockwise. The direction is the positive direction, and the deviation angle θ from the (0-11) direction, the (-110) direction, and the (10-1) direction is the clockwise direction as the positive direction, and the deviation angle θ is -30 ° ≤ θ ≤ + 30 °. Further, the θ of the single crystal ingot having the central axis direction <100> is 0 ° regardless of the cutting direction), and the sum of the θ of each of the plurality of workpieces (θ ₁ + θ ₂ +).・ ・ ・ + Θ _n ),
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
Provided is a work cutting apparatus for setting the cutting direction of each ingot and controlling the cutting so as to be performed.

At this time, the cutting processing apparatus cuts the first ingot and the second ingot as the plurality of works, and the control unit uses the first ingot as the first ingot in the central axis direction <111>. a single crystal ingot having a direction, the cutting direction of when cutting a wire to the first ingot, a deviation angle theta ₁ from <110> direction, in the range of 0 ° ≦ θ ₁ ≦ 30 ° set to, as the second ingot central axis direction using a single crystal ingot having a <111> direction, the cleavage direction when cutting a wire to the second ingot from the <110> direction It can be used as a work cutting apparatus that controls the cutting so that the deviation angle θ ₂ is set to −30 ° ≦ θ ₂ ≦ 0 °.

At this time, the cutting processing apparatus cuts the first ingot and the second ingot as the plurality of works, and the control unit serves as the first ingot in the central axis direction <111>. a single crystal having a direction, the cutting direction of when cutting a wire to the first ingot, so that the misalignment angle theta ₁ from <110> direction, the -30 ° ≦ θ ₁ ≦ 30 ° As the second ingot, it can be a work cutting apparatus that controls so as to cut using an ingot having a central axis direction of <100>.

Further, a plurality of wire guides are arranged at predetermined intervals so that the directions of rotation axes are parallel to each other, and grooves are formed on the outer surface at a predetermined pitch, and the grooves of the wire guides are formed at a predetermined pitch. A wire row formed by spirally wound wires, n work holding portions for holding each of n (n ≧ 2) ingots used as a plurality of workpieces for cutting, a control unit, and a control unit. By rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire travels in the axial direction, and the plurality of workpieces are simultaneously cut into a wafer shape at a plurality of locations. a cutting apparatus in which the control unit performs control so as to process, the control unit, the central axis direction <111> direction, or from a single crystal ingot having a <100> direction, selects the work At least one of the plurality of works is a single crystal ingot having a central axis direction of <111>, and a cutting direction when cutting a single crystal ingot having a central axis direction of <111> with a wire. When the deviation angle from the <110> direction is θ (°) (however, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction is counterclockwise. The clockwise direction is the positive direction, and the deviation angles θ from the (0-11) direction, the (-110) direction, and the (10-1) direction are the clockwise direction, and -30 ° ≤ θ ≤. It is set to + 30 °. Further, θ of the single crystal ingot having a central axis direction of <100> is 0 ° regardless of the cutting direction), and the sum of θ of each of the plurality of workpieces (θ ₁ + θ). ₂ + ・ ・ ・ ＋ θ _n )
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
By using a work cutting device that sets the cutting direction of each ingot and controls it to cut, it does not use a dedicated cutting device or special jig that supports the XY tilt method. In addition, they have found that an X-θ type wire saw device can suppress deterioration of the Warp value while improving productivity, and have completed the present invention.

Claims (13)

A plurality of wire guides arranged at predetermined intervals so that their rotation axes are parallel to each other, and grooves are formed on the outer surface at a predetermined pitch, respectively.
A wire row is formed by wires spirally wound around the groove of the wire guide at a predetermined pitch.
N (n ≧ 2) ingots are installed in parallel as a plurality of workpieces to be cut.
By rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire is traveling in the axial direction, and the plurality of workpieces are simultaneously cut into a wafer shape at a plurality of locations. It is a cutting method
The work is a single crystal ingot having a central axis direction of <111> direction or <100> direction, and is also
At least one of the plurality of workpieces is a single crystal ingot having a central axis direction of <111>.
When the deviation angle from the <110> direction of the cutting direction when cutting a single crystal ingot having the central axis direction <111> with a wire is θ (°) (however, the (1-10) direction, The deviation angle θ from the (-101) direction and the (01-1) direction is the (0-11) direction, the (-110) direction, and (10-1) with the counterclockwise direction as the positive direction. The deviation angle θ from the direction is −30 ° ≦ θ ≦ + 30 ° with the clockwise direction as the positive direction. Further, θ of the single crystal ingot having the central axis direction <100> is related to the cutting direction. 0 °),
The sum of θ (θ ₁ + θ ₂ + ... + θ _n ) of each of the plurality of workpieces is
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
A cutting processing method characterized in that cutting is performed by setting the cutting direction of each ingot so as to be. The cutting processing method according to claim 1, wherein the cutting direction of each ingot is set so that all the θs of the plurality of workpieces are not positive or negative. The sum of the θ is
-5 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 5 °
The cutting processing method according to claim 1 or 2, wherein the cutting is performed by setting the above. The sum of the θ is
θ ₁ + θ ₂ + ・ ・ ・ + θ _n = 0 °
The cutting processing method according to any one of claims 1 to 3, wherein the cutting is performed by setting the above. The plurality of works are designated as a first ingot and a second ingot.
As the first ingot, a single crystal ingot having a central axis direction of <111> is used, and when the first ingot is cut with a wire, the deviation angle θ _{1 in} the cutting direction from the <110> direction is , 0 ° ≤ θ ₁ ≤ 30 °
As the second ingot, a single crystal ingot having a central axis direction of <111> is used, and when the second ingot is cut with a wire, the deviation angle θ _{2 in} the cutting direction from the <110> direction is The cutting processing method according to any one of claims 1 to 4, wherein the cutting is performed by setting so that −30 ° ≦ θ ₂ ≦ 0 °. The plurality of works are designated as a first ingot and a second ingot.
As the first ingot, a single crystal ingot having a central axis direction of <111> is used, and when the first ingot is cut with a wire, the deviation angle θ _{1 in} the cutting direction from the <110> direction is , -30 ° ≤ θ ₁ ≤ 30 °
The cutting processing method according to any one of claims 1 to 4, wherein cutting is performed using an ingot having a central axis direction of <100> as the second ingot. The fifth or sixth aspect of the first ingot or the second ingot, wherein the length and the diameter of the second ingot are equal to or larger than the length and the diameter of the first ingot. Cutting method. A plurality of wire guides arranged at predetermined intervals so that their rotation axes are parallel to each other, and grooves are formed on the outer surface at a predetermined pitch, respectively.
A wire row formed by wires spirally wound around the groove of the wire guide at a predetermined pitch,
N work holding portions for holding each of n (n ≧ 2) ingots used as a plurality of works to be cut, and
Control unit and
Equipped with
By rotating the wire guide, the plurality of workpieces are simultaneously pressed against the wire row while the wire is traveling in the axial direction, and the plurality of workpieces are simultaneously cut into a wafer shape at a plurality of locations. It is a cutting machine controlled by the control unit.
The control unit
The work is selected from the single crystal ingots whose central axis direction is the <111> direction or the <100> direction, and the work is selected.
At least one of the plurality of workpieces is a single crystal ingot having a central axis direction of <111>.
When the deviation angle from the <110> direction of the cutting direction when cutting a single crystal ingot having the central axis direction <111> with a wire is θ (°) (however, the (1-10) direction, The deviation angle θ from the (-101) direction and the (01-1) direction is the (0-11) direction, the (-110) direction, and (10-1) with the counterclockwise direction as the positive direction. The deviation angle θ from the direction is −30 ° ≦ θ ≦ + 30 ° with the clockwise direction as the positive direction. Further, θ of the single crystal ingot having the central axis direction <100> is related to the cutting direction. 0 °),
The sum of θ (θ ₁ + θ ₂ + ... + θ _n ) of each of the plurality of workpieces is
-30 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 30 °
A workpiece cutting apparatus characterized in that the cutting direction of each ingot is set and the cutting is performed so as to be controlled. The control unit
The eighth aspect of the present invention, wherein the cutting direction of each ingot is set and the cutting is performed so that all the θs of the plurality of workpieces are not positive or negative. Work cutting equipment. The control unit
The sum of the θ is
-5 ° ≤ θ ₁ + θ ₂ + ... + θ _n ≤ 5 °
The work cutting processing apparatus according to claim 8 or 9, wherein the work is controlled so as to be set to be The control unit
The sum of the θ is
θ ₁ + θ ₂ + ・ ・ ・ + θ _n = 0 °
The work cutting processing apparatus according to any one of claims 8 to 10, wherein the work is controlled so as to be set to be The cutting machine
As the plurality of works, the first ingot and the second ingot are cut.
The control unit
As the first ingot, a single crystal ingot having a central axis direction of <111> is used, and the cutting direction θ ₁ when the first ingot is cut with a wire has a deviation angle from the <110> direction. , 0 ° ≤ θ ₁ ≤ 30 °
As the second ingot, a single crystal ingot having a central axis direction of <111> is used, and the cutting direction θ ₂ when the second ingot is cut with a wire has a deviation angle from the <110> direction. , -30 ° ≤ θ ₂ ≤ 0 °, and the work is controlled so as to perform cutting, according to any one of claims 8 to 11. apparatus. The cutting machine
As the plurality of works, the first ingot and the second ingot are cut.
The control unit
As the first ingot, a single crystal having a central axis direction of <111> is used, and the cutting direction θ ₁ when the first ingot is cut with a wire is set to a deviation angle from the <110> direction. Set so that -30 ° ≤ θ ₁ ≤ 30 °,
The second ingot according to any one of claims 8 to 11, wherein the second ingot is controlled so as to perform cutting using an ingot having a central axis direction of <100>. Work cutting equipment.

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