CN113119327A - Directional multi-line cutting method capable of improving <111> crystal orientation crystal bar cutting warp value - Google Patents

Directional multi-line cutting method capable of improving <111> crystal orientation crystal bar cutting warp value Download PDF

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CN113119327A
CN113119327A CN202110446789.3A CN202110446789A CN113119327A CN 113119327 A CN113119327 A CN 113119327A CN 202110446789 A CN202110446789 A CN 202110446789A CN 113119327 A CN113119327 A CN 113119327A
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rotation angle
crystal
beta
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CN113119327B (en
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赵延祥
历莉
刘波
程博
王忠保
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Ningxia Zhongxin Wafer Semiconductor Technology Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention provides a method for improving<111>A directional multi-wire cutting method for a crystal orientation crystal bar cutting warp value belongs to the technical field of monocrystalline silicon slicing. In that<111>In the crystal direction at a predetermined rotation angle theta0Cutting is performed, the predetermined rotation angle theta0Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg. The method can obviously reduce the warp value of the silicon wafer, obviously reduce the warp value fluctuation among batches, and is favorable for improving the surface orientation precision of the silicon wafer.

Description

Directional multi-wire cutting method capable of improving <111> crystal orientation crystal bar cutting warp value
Technical Field
The invention belongs to the technical field of monocrystalline silicon slicing, and particularly relates to a directional multi-line cutting method capable of improving a <111> crystal orientation crystal bar cutting warp value.
Background
The multi-wire cutting has the characteristics of high efficiency, low cost and capability of well adapting to the increasing diameter of the silicon single crystal rod, is widely applied to the processing of silicon wafers, and becomes the most important means in the processing of the silicon wafers. In the slicing process, important parameters such as warp, TTV, BOW, local flatness and the like of the silicon wafer need to be controlled, the slice warp value obtained by the traditional multi-line cutting mode is large, and the slice warp value fluctuation among batches is large.
A multi-wire cutting mode with a fixed crystal orientation is beneficial to improving a warp value of a monocrystalline silicon slice, for example, a Chinese patent with a patent number of 201711037057.9 discloses a multi-wire cutting process with a fixed crystal orientation of a <111> type monocrystalline silicon, six crystal orientation positions of <111> type monocrystalline silicon in the radial direction of [1-10], [ -110], [01-1], [0-11], [10-1], [ -110] are determined by an X-ray orientation instrument, then in the rod bonding process, a single crystal rod is rotated to enable any one crystal orientation to be vertical to a rod bonding support for bonding, and during cutting, a cutting wire can cut along the crystal orientation direction. By the method, the warp value of the monocrystalline silicon slice can be reduced by about 4-8 mu m.
However, during the process of single crystal pulling, crystal orientation deviation exists, so that a blade can cut into the silicon wafer from any rotation angle during multi-line cutting, although the warp value of the silicon wafer is reduced to a certain extent, the warp value is unstable, the warp value fluctuation of multiple batches of silicon wafers is large, the surface orientation precision of the silicon wafers cannot be effectively guaranteed, and the silicon wafer yield is reduced due to the general industrial requirement that the surface orientation deviation is easily greater than 0.29 degrees.
Disclosure of Invention
In view of the above, the invention provides a directional multi-line cutting method capable of improving a <111> crystal orientation crystal bar cutting warp value, so as to solve the technical problems that in the prior art, when a monocrystalline silicon slice is cut in from any rotation angle, the silicon slice warp value fluctuates greatly among batches, and the plane orientation precision cannot be guaranteed.
The technical scheme adopted by the invention for solving the technical problems is as follows:
can improve<111>A directional multi-wire cutting method for a warp value of crystal orientation crystal bar cutting, which comprises the following steps of<111>In the crystal direction at a predetermined rotation angle theta0Cutting is performed, the predetermined rotation angle theta0Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg.
Preferably, the directional multi-wire cutting method capable of improving the <111> crystal orientation crystal bar cutting warp value comprises the following steps:
a. selecting a reference surface;
b. acquiring the crystal orientation deviation degree of the <111> crystal orientation;
c. calculating the measured rotation angle theta of the crystal bar according to the deviation degree of the crystal orientation1And measuring the swing angle beta1；
d. From the measured rotation angle theta1And a predetermined rotation angle theta0Calculating a supplementary swing angle delta beta;
e. according to determination of swing angle beta1Calculating the actual swing angle beta with the supplementary swing angle delta beta0；
f. According to a predetermined rotation angle theta0From the actual pivot angle beta0The ingot is rotated, followed by fixing, and slicing is completed.
Preferably, in step e, the "is based on the determination of the pivot angle β1Calculating the actual swing angle beta with the supplementary swing angle delta beta0"comprises the following steps:
e1. from the measured rotation angle theta1And a predetermined rotation angle theta0Determining the rotation direction;
e2. calculating the actual pivot angle beta0：
If the direction of rotation is clockwise, then β0＝β1+Δβ；
If the direction of rotation is counterclockwise, then β0＝β1-Δβ。
Preferably, in step e1, the "is based on the measured rotation angle θ1And a predetermined rotation angle theta0Determining the direction of rotation "comprises the steps of:
respectively calculating the measured rotation angles theta1With a predetermined angle of rotation theta to be selected01、θ02、θ03Difference of (a) delta theta01、Δθ02、Δθ03；
Compare | Δ θ01|、|Δθ02|、|Δθ03At | Δ θ |01|、|Δθ02|、|Δθ03The preset rotation angle to be selected corresponding to the minimum value in | is used as the preset rotation angle theta0(ii) a Wherein, theta01、θ02、θ03Respectively is 0 degree +/-5 degrees, 60 degrees +/-5 degrees or-60 degrees +/-5 degrees;
from the measured rotation angle theta1And a selected predetermined angle of rotation theta0And determining the rotation direction.
Preferably, in step f, "according to a predetermined rotation angle θ0From the actual pivot angle beta0Rotating the ingot and then fixing comprises the following steps:
f1. according to a predetermined rotation angle theta0From the actual pivot angle beta0Rotating the crystal bar, and then fixing;
f2. judging whether the orientation of the wafer surface is qualified or not; if the wafer surface orientation is qualified, carrying out curing slicing; and if the wafer surface orientation is unqualified, degumming the crystal bar, repeating the steps a-f, and fixing the crystal bar again.
According to the technical scheme, the directional multi-wire cutting method capable of improving the warp value of the <111> crystal orientation crystal bar cutting has the beneficial effects that: when the <111> crystal orientation crystal bar is directionally cut, the directional cutting is carried out at a preset rotation angle of 0 +/-5 degrees, 60 +/-5 degrees or-60 +/-5 degrees, the cutting mode can obviously reduce the warp value of the silicon wafer, obviously reduce the warp value fluctuation among batches, and is beneficial to improving the surface orientation precision of the silicon wafer, and the surface orientation precision of the silicon wafer can be kept about 0.1 degrees.
Drawings
FIG. 1 is a graph showing the warp value distribution of wafers from the same batch after improvement.
FIG. 2 is a line graph showing the warp value fluctuation box of lots of silicon wafers after improvement.
FIG. 3 is a comparison of warp value fluctuation boxed graphs of multiple batches of silicon wafers before and after improvement.
Detailed Description
The technical scheme and the technical effect of the invention are further elaborated in the following by combining the drawings of the invention.
In one embodiment, a method of improving<111>A directional multi-wire cutting method for a warp value of crystal orientation crystal bar cutting, which comprises the following steps of<111>In the crystal direction at a predetermined rotation angle theta0Cutting is performed, the predetermined rotation angle theta0Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg. The predetermined rotation angle theta0For angle of rotation relative to a reference plane, typically the reference plane being a monocrystalline silicon ingotnotch face.
Specifically, the directional multi-wire cutting method capable of improving the <111> crystal orientation crystal bar cutting warp value comprises the following steps:
a. and selecting a reference surface. Generally, the notch plane of a monocrystalline silicon ingot is taken as a reference plane.
b. The degree of crystal orientation deviation of the <111> crystal orientation is obtained. The deviation degree of the crystal orientation of the monocrystalline silicon crystal rod, namely the deviation angle of the <111> crystal orientation of the monocrystalline silicon crystal rod and the axis of the monocrystalline silicon crystal rod is obtained by an X-ray orientation instrument.
c. Calculating the measured rotation angle theta of the crystal bar according to the deviation degree of the crystal orientation1And measuring the swing angle beta1. From the degree of deviation of the crystal orientation, the measurement rotation angle theta of the relative crystal orientation deviation can be calculated1And determining the pivot angle beta1The calculation process is conventional and will not be described in detail.
Due to measurement of the rotation angle theta1From a predetermined angle of rotation theta0With a certain deviation, if necessary at a predetermined angle of rotation theta0When the following cutting is performed, the swing angle beta needs to be measured1Making an adjustment to the cutting direction<110>The crystal orientation direction is vertical. For measuring swing angle beta1The adjustment process of (2) is as follows:
d. from the measured rotation angle theta1And a predetermined rotation angle theta0And calculating a supplementary swing angle delta beta.
Specifically, the method comprises the following steps:
e1. from the measured rotation angle theta1And a predetermined rotation angle theta0And determining the rotation direction.
e2. Calculating the actual pivot angle beta0: if the direction of rotation is clockwise, then β0＝β1+ Δ β; if the direction of rotation is counterclockwise, then β0＝β1-Δβ。
Specifically, the "is based on the measured rotation angle θ1And a predetermined rotation angle theta0Determining the direction of rotation "comprises the steps of:
respectively calculating the measured rotation angles theta1With a predetermined angle of rotation theta to be selected01、θ02、θ03Difference of (a) delta theta01、Δθ02、Δθ03(ii) a Wherein, theta01、θ02、θ03Respectively 0 degree +/-5 degrees, 60 degrees +/-5 degrees or-60 degrees +/-5 degrees.
Compare | Δ θ01|、|Δθ02|、|Δθ03At | Δ θ |01|、|Δθ02|、|Δθ03The preset rotation angle to be selected corresponding to the minimum value in | is used as the preset rotation angle theta0(ii) a From the measured rotation angle theta1And a selected predetermined angle of rotation theta0And determining the rotation direction.
f. According to a predetermined rotation angle theta0From the actual pivot angle beta0The ingot is rotated, followed by fixing, and slicing is completed.
In one embodiment, measured according to an X-ray orientation<111>The measured rotation angle theta is calculated from the degree of deviation of the crystal orientation1Is 15 degrees and the swing angle is-1.821 degrees. From the measured rotation angle theta1It can be seen that the rotation angle is rotated in the direction of 0 ° ± 5 °, the adjustment range is small, and the adjustment error is small. Thus, the rotation angle theta is predetermined0Is chosen to be 5 ° (theoretically, at a predetermined rotation angle θ)0The rotation angle theta is optimally selected at 0 degrees, and in practical operation, the predetermined rotation angle theta can be limited by practical factors0Selected as 5 °). At this time, the supplementary pivot angle Δ β is calculated to be-0.011 °.
When the rotation angle is clockwise rotation in the process of rotating from 15 degrees to 5 degrees, then beta is0＝β1+Δβ＝-1.821°+(-0.011)＝-1.832°。
When the ingot is bonded, the ingot is bonded at a rotation angle of 5 DEG and a swing angle of-1.832 deg.
Referring to fig. 1, fig. 1 shows the warp value distribution of silicon wafers obtained by slicing a single crystal silicon ingot by the method of the above example, and it can be seen from fig. 1 that the warp values of silicon wafers of the same batch are concentrated around 5 μm and the maximum value is not more than 10 μm, which significantly reduces the warp value of silicon wafers of the same batch.
Referring to table 1 and fig. 2, 10 sets of single crystal silicon ingots were then processed to complete wire slicing under the same process conditions, according to the method of the present embodiment, and the specific data are shown in table 1.
Comparison of rotation angle and swing angle before and after adjustment of 110 groups of monocrystalline silicon crystal bars
Figure BDA0003037242140000061
After 10 groups of monocrystalline silicon crystal rods are cut, the warp value distribution of the obtained silicon wafers is counted, as shown in FIG. 2, the warp values among the batches are evenly distributed between 5 and 9 micrometers, and the average value is about 6 micrometers. It can be seen that by the process of the present invention, the warp value distribution between batches is significantly reduced.
Referring to fig. 3, comparing the method provided by the chinese patent with patent number 201711037057.9, through statistical comparison of multiple batches, the method provided by the present invention not only significantly reduces the average warp value of silicon wafers, controls the warp value of silicon wafers to be between 5-9 μm, significantly reduces warp value distribution, and improves the qualification rate of silicon wafers.
Meanwhile, by adopting the traditional process method, the problem of uncontrollable silicon wafer surface azimuth precision is necessarily faced while the warp value of the silicon wafer is reduced. When the method provided by the invention is used for carrying out multi-line cutting on the polycrystalline silicon crystal bar, the warp value of the silicon wafer can be reduced, the face orientation precision of the silicon wafer can be controlled within 0.1 degrees, and the qualified rate of the silicon wafer is further improved.
In one embodiment, in step f, "according to a predetermined rotation angle θ0From the actual pivot angle beta0Rotating the ingot and then fixing comprises the following steps:
f1. according to a predetermined rotation angle theta0From the actual pivot angle beta0Rotating the crystal bar, and then fixing;
f2. judging whether the orientation of the wafer surface is qualified or not; if the wafer surface orientation is qualified, carrying out curing slicing; and if the wafer surface orientation is unqualified, degumming the crystal bar, repeating the steps a-f, and fixing the crystal bar again.
And detecting the crystal orientation of the crystal bar after the completion of the following, judging whether the following is accurate, and if the following is not accurate, then carrying out the following again to ensure the qualified rate of the silicon wafer.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (5)

1. Can improve<111>The directional multiline cutting method of the warp value of the crystal orientation crystal bar is characterized in that<111>In the crystal direction at a predetermined rotation angle theta0Cutting is performed, the predetermined rotation angle theta0Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg.
2. The directional multiline slicing method capable of improving the <111> crystal orientation crystal bar slicing warp value as claimed in claim 1, comprising the steps of:
a. selecting a reference surface;
b. acquiring the crystal orientation deviation degree of the <111> crystal orientation;
c. calculating the measured rotation angle theta of the crystal bar according to the deviation degree of the crystal orientation1And measuring the swing angle beta1；
d. From the measured rotation angle theta1And a predetermined rotation angle theta0Calculating a supplementary swing angle delta beta;
e. according to determination of swing angle beta1Calculating the actual swing angle beta with the supplementary swing angle delta beta0；
f. According to a predetermined rotation angle theta0From the actual pivot angle beta0The ingot is rotated, followed by fixing, and slicing is completed.
3. Can be improved as claimed in claim 2<111>The directional multiline cutting method for the crystal orientation crystal bar cutting warp value is characterized in that in the step e, the angle beta is measured according to the measured swing angle1Calculating the actual swing angle beta with the supplementary swing angle delta beta0"comprises the following steps:
e1. from the measured rotation angle theta1And a predetermined rotation angle theta0Determining the rotation direction;
e2. calculating the actual pivot angle beta0：
If the direction of rotation is clockwise, then β0＝β1+Δβ；
If the direction of rotation is counterclockwise, then β0＝β1-Δβ。
4. Can be improved as claimed in claim 3<111>The directional multiline cutting method for the crystal orientation crystal bar cutting warp value is characterized in that in the step e1, the step1And a predetermined rotation angle theta0Determining the direction of rotation "comprises the steps of:
respectively calculating the measured rotation angles theta1With a predetermined angle of rotation theta to be selected01、θ02、θ03Difference of (a) delta theta01、Δθ02、Δθ03(ii) a Compare | Δ θ01|、|Δθ02|、|Δθ03At | Δ θ |01|、|Δθ02|、|Δθ03The preset rotation angle to be selected corresponding to the minimum value in | is used as the preset rotation angle theta0(ii) a Wherein, theta01、θ02、θ03Respectively is 0 degree +/-5 degrees, 60 degrees +/-5 degrees or-60 degrees +/-5 degrees; from the measured rotation angle theta1And a selected predetermined angle of rotation theta0And determining the rotation direction.
5. Can be improved as claimed in claim 2<111>The directional multi-line cutting method for the crystal orientation crystal bar cutting warp value is characterized in that in the step f, according to a preset rotation angle theta0From the actual pivot angle beta0Rotating the ingot and then fixing comprises the following steps:
f1. according to a predetermined rotation angle theta0From the actual pivot angle beta0Rotating the crystal bar, and then fixing;
f2. judging whether the orientation of the wafer surface is qualified or not; if the wafer surface orientation is qualified, carrying out curing slicing; and if the wafer surface orientation is unqualified, degumming the crystal bar, repeating the steps a-f, and fixing the crystal bar again.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19825050A1 (en) * 1998-06-04 1999-12-09 Wacker Siltronic Halbleitermat Process for orientating a cylindrical semiconductor single crystal
US6159284A (en) * 1998-06-04 2000-12-12 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process and device for producing a cylindrical single crystal and process for cutting semiconductor wafers
CN102152410A (en) * 2010-12-23 2011-08-17 万向硅峰电子股份有限公司 Cutting method for adjusting crystal orientation excursion by rotating single crystal rod
CN107599196A (en) * 2017-10-30 2018-01-19 中国电子科技集团公司第四十六研究所 It is a kind of<111>Type monocrystalline silicon determines crystal orientation multi-line cutting process
CN110065171A (en) * 2019-04-25 2019-07-30 西安奕斯伟硅片技术有限公司 A kind of cutting method of cutter device and crystal bar
CN111361030A (en) * 2020-04-24 2020-07-03 西安奕斯伟硅片技术有限公司 Multi-wire cutting device and multi-wire cutting method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19825050A1 (en) * 1998-06-04 1999-12-09 Wacker Siltronic Halbleitermat Process for orientating a cylindrical semiconductor single crystal
US6159284A (en) * 1998-06-04 2000-12-12 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process and device for producing a cylindrical single crystal and process for cutting semiconductor wafers
CN102152410A (en) * 2010-12-23 2011-08-17 万向硅峰电子股份有限公司 Cutting method for adjusting crystal orientation excursion by rotating single crystal rod
CN107599196A (en) * 2017-10-30 2018-01-19 中国电子科技集团公司第四十六研究所 It is a kind of<111>Type monocrystalline silicon determines crystal orientation multi-line cutting process
CN110065171A (en) * 2019-04-25 2019-07-30 西安奕斯伟硅片技术有限公司 A kind of cutting method of cutter device and crystal bar
CN111361030A (en) * 2020-04-24 2020-07-03 西安奕斯伟硅片技术有限公司 Multi-wire cutting device and multi-wire cutting method

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