TW202039150A - Cutting process method for workpiece and cutting process apparatus for workpiece can realize the cut with less deterioration in the Warp value by using a wire saw in an X-[theta] manner - Google Patents

Abstract

The object of the present invention is to provide a cutting process method for a workpiece, which can realize the cut with less deterioration of the Warp value by using a wire saw in an X-[theta] manner even the cutting direction of the workpiece is in a direction ([theta] direction) where the Warp value will be greatly deteriorated. A cutting process method of the present invention is a cutting process method for a workpiece. In this method, a plurality of wire guiding members and wires are arranged to form a wire array. The plurality of wire guiding members are arranged at predetermined intervals in a manner where the directions of respective rotation axes are parallel and there are grooves formed at predetermined intervals on the respective outer surfaces. The wires are wound into a spiral form at predetermined intervals in the grooves of the wire guiding members. N (n ≥ 2) crystal ingots are placed side by side as a plurality of workpieces for cutting. While the wire guiding members are rotated to make the wires move in the axial direction, the plurality of workpieces are simultaneously pressed to the wire array to be simultaneously cut into a wafer shape in a plurality of places. The workpiece is a single crystal ingot having a central axis direction in the (111) direction or (100) direction and at least one of the plurality of workpieces is the single crystal ingot having the central axis in the (111) direction. The cutting direction for each crystal ingot is set as following for cutting: when the single crystal ingot having the central axis in the (111) direction is cut by wire and the angle of the cutting direction deviated from the (110) direction is defined as [theta](DEG), the sum of the [theta] of the respective workpiece ([theta]1+[theta]2+…+[theta]n) is -30 (DEG) ≤ [theta]1+[theta]2+…+[theta]n ≤ 30 DEG. However, the angle [theta] deviated from the (1-10) direction, (-101) direction, and (01-1) direction in the counterclockwise direction is a positive direction, and the angle [theta] deviated from the (0-11) direction, (-110) direction, and (10-1) in the clockwise direction is a positive direction. The [theta] of the single crystal ingot having the central axis in the (100) direction is 0 (DEG) regardless of the cutting direction.

Description

Workpiece cutting method and work piece cutting processing device

The invention relates to a method for cutting and processing a workpiece and a cutting and processing device for the workpiece.

In recent years, an increase in the size (large diameter) of wafers has been expected. With this increase in size, a wire saw is exclusively used for cutting the ingot (for example, Patent Document 1). The wire saw moves the wire (high-tension steel wire) at high speed, and pours the grout on this wire, while pressing against the workpiece (for example, ingots of brittle materials such as silicon, glass, ceramics, etc.). It is a cutting device that cuts multiple wafers at the same time.

In the cutting by the wire saw, first, the workpiece to be cut is held by the workpiece holder having the workpiece plate holding the workpiece by the reinforcing plate and the holder body supporting the workpiece plate. Then, the workpiece holder holding the workpiece is installed on the wire saw, and the workpiece W is pressed against the roller with a plurality of grooves to wind the line formed by the line traveling back and forth in the axial direction, thereby, the workpiece W Cut into wafer shape. The wire saw cuts the workpiece in the vertical direction of the workpiece support. In addition, each line forming the line intersects the workpiece holder approximately perpendicularly.

When cutting a wafer from a cylindrical ingot (hereinafter referred to as a "workpiece") having a crystal orientation such as a semiconductor single crystal silicon, cutting is performed based on the crystal surface of the work piece. Generally, a deviation occurs between the central axis (the axis on the shape of the workpiece) of the cylindrical workpiece and the orientation of the crystal axis (the normal line of the crystal surface), and the deviation must be corrected and then cut (Patent Documents 1 and 2).

The following methods are known for correcting the orientation of the crystal axis. (1) The method is to use the reinforcing plate to attach the workpiece to the jig installed on the wire saw, rotate the workpiece to adjust the orientation of the Y-axis direction, and adjust the orientation of the X-axis with the attachment angle of the workpiece holder ( Called "X-θ Method"). (2) The method is to install the workpiece support with the workpiece attached to the wire saw, and adjust the position inside the wire saw (called "internal operation X-Y tilt method"). (3) The method is to attach the workpiece to the jig installed to the wire saw through the reinforcing plate, by using a special jig to adjust the tilt in the Y-axis direction, and the X-axis direction is the attachment angle to the workpiece holder Perform orientation adjustment (referred to as "external work XY tilt method").

In addition, it is known that when slicing a workpiece with an axis orientation> 100>, such as an axis orientation> 111>, due to the cutting direction (the cutting direction of the line) when the workpiece is sliced, the surface and back of the cut wafer (Due to poor processing resistance) The damage difference changes, and the slice quality (mainly Warp value) greatly changes (refer to Patent Document 3).

In addition, Figure 4 shows the definition of Warp. Warp is a shape parameter related to the deviation of the wafer from the center line plane. It is the maximum in-plane distance between the imaginary center plane of the unattached wafer and the reference plane. The Bow in the figure is similar to the Warp evaluation, which is the shape parameter of the distance between the center of the wafer and the reference plane. In addition, the measurement method is specified in JEIDA-43-1999 and ASTM F1530-94. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 11-48238 [Patent Document 2] Japanese Patent Publication No. 2017-24145 [Patent Document 3] Japanese Patent Publication No. 2014-195025

[Problem to be solved by invention]

Therefore, as in the aforementioned (1) X-θ method, when the workpiece is rotated to adjust the crystal orientation of the workpiece in the Y-axis direction, when the direction in which the slice quality is greatly deteriorated is the cutting direction, the orientation is changed. And cut off. For example, in the past, cutting was performed after staggering the allowable range of the specifications.

However, when the azimuth specification is strict, it is impossible to adjust the target to change the azimuth, so the normal wire saw cannot cut the good product, and the adjustment can be made by the XY tilt method (the above (2), (3)) The device or a special jig that can be adjusted in the XY tilt mode can be used for cutting.

However, the wire saw corresponding to the X-Y tilting method described in Patent Document 2 is generally expensive, and the internal operation requires azimuth alignment, and there is a problem of low device productivity. In addition, in the adjustment made by the X-Y tilt method described in Patent Document 2, when the specification tilts to the Y direction greatly, the difference in the cutting amount due to the position of the workpiece is large, and there is a problem that a stable Warp value cannot be obtained.

The present invention is made to solve the above-mentioned problems, and its purpose is to provide a workpiece cutting method and a workpiece cutting processing device. The workpiece cutting method and workpiece cutting processing device even if the Warp value is greatly deteriorated When the direction is used as the cutting direction of the workpiece, it is also not necessary to use a dedicated cutting device or a dedicated special jig corresponding to the XY tilt method which is associated with high cost, and the X-θ method of wire saw device can achieve cutting with less deterioration of the Warp value. Off. [Means to solve the problem]

The present invention is made in order to achieve the above-mentioned object, and provides a cutting processing method, which is a cutting processing method of a workpiece, in which a plurality of wire guides are provided, and the plurality of wire guides are arranged at a predetermined interval to each other The direction of the axis of rotation is parallel and grooves are formed on the respective outer surfaces at a predetermined pitch. The grooves of the wire guide are wound into a spiral at a predetermined pitch to form a line row, and n (n ≧2) The ingots are arranged side by side as a plurality of workpieces to be cut, and the wire is moved in the axial direction by rotating the wire guide, and the plurality of workpieces are simultaneously crimped on the line row, thereby The plural workpieces are cut and processed into wafer shapes at plural places at the same time, and the workpieces are single crystal ingots whose central axis direction is >111> or >100>, and at least one of the plural workpieces is the central axis For single crystal ingots with a direction of >111>, the cutting direction of each ingot is set as follows: cut when the single crystal ingot with a center axis direction of >111> is cut by a line When the angle of the direction offset from >110> is set as θ(°), the sum of the respective θ of the plural workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ +θ ₂ +…+θ _n ≦30°[However, the offset angle θ from (1-10) direction, (-101) direction and (01-1) direction is counterclockwise as the positive direction, from (0-11) The direction, (-110) direction, and (10-1) direction offset angle θ is the positive direction, -30°≦θ≦+30°. In addition, the θ of the single crystal ingot whose central axis direction is >100> direction is 0° regardless of the cutting direction].

According to this cutting method, it is not possible to use a dedicated cutting device or a dedicated special jig corresponding to the XY tilt method which is associated with high cost, but a wire saw device of the X-θ method, which improves productivity and suppresses the Warp value. deterioration.

At this time, the cutting processing method can cut each ingot by setting the cutting direction of each ingot so that the θ of each of the plural workpieces is not all positive or negative.

Thereby, the deterioration of the Warp value can be suppressed more effectively.

At this time, the cutting method can set the sum of θ to -5°≦θ ₁ +θ ₂ +…+θ _n ≦5°, more preferably θ ₁ +θ ₂ +…+θ _n =0° Cut off.

Thereby, the deterioration of the Warp value can be suppressed more effectively.

At this time, the cutting method can make the plural workpieces the first and second ingots. The first ingot uses a single crystal ingot whose central axis direction is >111> and is set to cut the In the case of the first ingot, the angle θ ₁ that the cutting direction deviates from the >110> direction is within the range of 0°≦θ ₁ ≦30°. The second ingot uses a single crystal ingot whose central axis direction is >111> , And set the angle θ ₂ by which the cutting direction deviates from the >110> direction when the second ingot is cut by a line to be -30°≦θ ₂ ≦0°.

This can more reliably suppress the deterioration of the Warp value.

At this time, the cutting method can make the plurality of workpieces be the first ingot and the second ingot. The first ingot uses a single crystal ingot with a center axis direction of >111> and is set to cut in line When the first ingot is broken, the angle θ ₁ that the cutting direction deviates from the >110> direction is -30°≦θ ₁ ≦30°. The second ingot uses the ingot whose central axis direction is >100>. Cut off.

This can more reliably suppress the deterioration of the Warp value.

At this time, the cutting method may be the first ingot or the second ingot, so that the length and diameter of the second ingot are greater than the length and diameter of the first ingot.

Thereby, productivity can be improved, and deterioration of Warp value can be suppressed more reliably.

In addition, the present invention provides a workpiece cutting and processing device, which includes a plurality of wire guides, a line row, n workpiece holding parts, and a control part, and the plurality of wire guides are arranged at predetermined intervals as mutually rotating shafts. The direction is parallel and grooves are respectively formed at predetermined intervals on the outer surfaces of the respective wires; the line is formed by the grooves of the wire guide being wound into a spiral at a predetermined interval; the n workpiece holding parts are respectively held Use n (n≧2) ingots as a plurality of workpieces to be cut, and a control unit; the control unit performs control so that the wire is moved in the axial direction by rotating the wire guide while turning The plurality of workpieces are simultaneously crimped on the line, and the plurality of workpieces are simultaneously cut and processed into a wafer shape at a plurality of places. The control unit controls: from the center axis direction to the >111> direction or the >100> direction Select the workpiece for the single crystal ingot, and set at least one of the plurality of workpieces to be a single crystal ingot with a center axis direction of >111>, and set the cutting direction of each ingot to cut: When a single crystal ingot with a center axis direction of >111> is cut by a line, the angle of deviation from the >110> direction of the single crystal ingot is defined as θ(°), the sum of the θ of the plural workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ +θ ₂ +…+θ _n ≦30°[However, from the (1-10) direction, (-101) direction and (01- 1) The angle θ of the direction shift takes the counterclockwise direction as the positive direction, and the angle θ shifted from the (0-11) direction, (-110) direction, and (10-1) direction is the clockwise direction as the positive direction, -30°≦θ≦+30°; Moreover, the θ of the single crystal ingot whose central axis direction is >100> direction is 0° regardless of the cutting direction].

According to this kind of workpiece cutting and processing device, it is possible to maintain the productivity of the X-θ method wire saw device associated with low cost and suppress the deterioration of the Warp value.

At this time, a workpiece cutting and processing device can be provided. The workpiece cutting and processing device is controlled by the control unit so that the cutting direction of each ingot is set to the plural number of workpieces. The θ is not all positive or negative. Come to cut off.

This can more effectively suppress the deterioration of the Warp value.

At this time, it can be a workpiece cutting and processing device, which is controlled by the control unit to set the sum of θ to -5°≦θ ₁ +θ ₂ +...+θ _n ≦5 °, more preferably θ ₁ +θ ₂ +...+θ _n for cutting.

Thereby, the deterioration of the Warp value can be suppressed more effectively.

At this time, it may be a workpiece cutting processing device, that is, the cutting processing device cuts the first ingot and the second ingot as the plurality of workpieces, and the control unit controls to use the first ingot The central axis direction is the single crystal ingot in the >111> direction, and the cutting direction when the first ingot is cut by a line is set to the angle θ ₁ deviated from the >110> direction as 0°≦θ ₁ ≦ In the range of 30°, the second ingot uses a single crystal ingot whose central axis direction is >111>, and the cutting direction when cutting the second ingot by a line is set to be offset from the >110> direction The angle θ ₂ is -30°≦θ ₂ ≦0° for cutting.

This can more reliably suppress the deterioration of the Warp value.

In this case, it may be a workpiece cutting and processing device that cuts the first and second ingots as the plurality of workpieces, and the control unit controls such that the first ingot uses the central axis The single crystal whose direction is >111>, and the cutting direction when cutting the first ingot with a line is set to the angle θ ₁ offset from the >110> direction is -30°≦θ ₁ ≦30°, The second ingot is cut using an ingot whose central axis direction is >100>.

This can more reliably suppress the deterioration of the Warp value. [Effects of Invention]

As mentioned above, according to the cutting method of the work piece of the present invention, in the cutting of single crystal ingots with >111> directions, the productivity can be improved at low cost without complicated operations, and the Warp value can be suppressed. deterioration. In addition, according to the workpiece cutting device of the present invention, in the cutting of single crystal ingots with >111> directions, it is possible to improve productivity at low cost without performing complicated operations, and to suppress the deterioration of the Warp value .

[Form to implement the invention]

Hereinafter, the present invention will be described in detail, but the present invention is not limited to these.

As mentioned above, a workpiece cutting method and workpiece cutting processing device are required. The workpiece cutting method and workpiece cutting processing device can not be used even if the direction in which the Warp value is greatly deteriorated is used as the cutting direction Corresponding to the special cutting device or special jig for the XY tilting method, and the wire saw device of the X-θ method to achieve cutting with less deterioration of the Warp value.

The inventors of the present case have repeatedly reviewed the above problems and found that the following cutting processing method can not use the special cutting device corresponding to the XY tilt method or the special special jig, but the X-θ method wire saw device can improve the productivity , And suppress the deterioration of the Warp value, to complete the present invention. The aforementioned cutting method is a method of cutting a workpiece, which is provided with a plurality of wire guides, and the plurality of wire guides are arranged at a predetermined interval as a rotation axis of each other The direction is parallel and grooves are formed on the respective outer surfaces with predetermined pitches, and the grooves of the wire guide are wound into spiral lines at predetermined pitches to form a line row, n (n≧2) The ingots are arranged side by side as a plurality of workpieces to be cut. The wire guide is rotated on one side to make the wire travel in the axial direction, and the plurality of workpieces are simultaneously crimped on the line row, and the plurality of workpieces The workpiece is cut and processed into a wafer shape at a plurality of places at the same time. The workpiece is a single crystal ingot with a center axis direction of >111> or >100>, and at least one of the plurality of workpieces is a center axis direction of> For single crystal ingots in the direction of 111>, set the cutting direction of each ingot as follows: When cutting the single crystal ingot with the direction of the center axis as the direction of >111>, the cutting direction is from >110>When the angle of the direction deviation is θ(°), the sum of the respective θ of the plural workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ +θ ₂ +…+θ _n ≦30°[However, the offset angle θ from the (1-10) direction, (-101) direction and (01-1) direction is the counterclockwise direction as the positive direction, and from the (0-11) direction, (- The angle θ of 110) direction and (10-1) direction offset is the positive direction of clockwise direction, -30°≦θ≦+30°; and the central axis direction is >100> direction of single crystal ingot θ is 0° regardless of the cutting direction].

In addition, it has been found that the cutting and processing device for the following workpieces can be used instead of the dedicated cutting device or dedicated special jig corresponding to the XY tilt method, but the X-θ method of wire saw device can improve productivity and suppress the deterioration of Warp value. To complete the present invention, the aforementioned workpiece cutting and processing device includes a plurality of wire guides, a wire row, n workpiece holding parts, and a control part. The plurality of wire guides are arranged at predetermined intervals so that their rotation axis directions are parallel to each other. And grooves are formed on their outer surfaces at predetermined intervals; the line is formed by winding the grooves of the wire guide into a spiral at a predetermined interval; the n workpiece holding parts are held and used as N ingots (n≧2) of the plural workpieces to be cut, and a control part; the control part controls the thread to travel in the axial direction by rotating the wire guide, and the plural The workpieces are crimped on the line at the same time, and the plurality of workpieces are cut and processed into a wafer shape at a plurality of places at the same time, and the control part controls the single direction from the center axis to the direction of >111> or >100>. The crystal ingot selects the workpiece, and at least one of the plurality of workpieces is a single crystal ingot with the center axis direction of >111>, and the cutting direction of each ingot is set as follows to cut: When the central axis direction of the single crystal ingot is >111> direction when the cutting direction is cut from the >110> direction when the angle offset is θ (°), the sum of the θ of the plural workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ +θ ₂ +…+θ _n ≦30°.

In addition, as described above, the present invention does not use a dedicated cutting device or a dedicated special jig corresponding to the XY tilting method associated with high cost, but uses a wire saw device of the X-θ method associated with low cost to improve productivity, And to suppress the deterioration of the Warp value, the device used for cutting is not limited to the X-θ method, and it can also be implemented in the XY tilt mode.

Hereinafter, it will be described with reference to the drawings.

As mentioned before, it is known that when slicing a workpiece with an axis direction>111>, the cutting direction (the cutting direction of the line) when the workpiece is sliced is different from the surface and back of the cut wafer (due to the processing resistance). Poor) Poor damage changes, and slice quality (mainly Warp value) greatly changes. In addition, the following description exemplifies the use of single crystal silicon as a workpiece. As long as there is a workpiece with an axial direction >111>, it is not limited to single crystal silicon.

Fig. 5 shows a conceptual diagram of a cross-section perpendicular to the axial direction of a single crystal silicon with an axial direction >111>. For example, when the cutting direction of the wire saw is shown in the direction of the solid arrow shown in FIG. 5, the damage difference between the front and back of the wafer is small, and the influence on the Warp value is small. However, when the cutting direction is the direction indicated by the broken arrow in FIG. 5, the difference in damage between the front and back of the wafer is large, and the Warp value is greatly deteriorated.

In addition, the direction of the solid arrow in Fig. 5 is the >110> direction in crystallography. When it is referred to as ">110> direction" in this specification, as shown by the solid arrow in Fig. 5, it includes the crystallographic equivalent orientation .

Here, the definition of the cutting direction of the single crystal ingot whose central axis direction is the >111> direction and the >100> direction will be described with reference to FIG. 6. In this manual, "the angle θ(°) offset from the >110> direction" refers to the angle offset from the >110> direction. At this time, regarding the signs (+ direction,-direction) indicating the direction of the shift angle, the shift angle θ from the (1-10) direction, (-101) direction, and (01-1) direction is counterclockwise It is the positive direction, and the angle θ offset from the (0-11) direction, (-110) direction, and (10-1) direction is the clockwise direction as the positive direction. Also, -30°≦θ≦+30°.

For example, when the arrow A shown in Fig. 6 is the cutting direction, since the angle offset from the (1-10) direction is the counterclockwise direction as the positive direction, the direction from (1-10) is negative (minus ) The direction offset is 15°, the angle of the offset from >110> direction is "-15°". Also, when the arrow B shown in Fig. 6 is the cutting direction, the deviation from the (1-10) direction to the plus (plus) direction is 20°, and the angle of deviation from the >110> direction is "+20°". When the arrow C shown in Fig. 6 is the cutting direction, since the angle of deviation from the (0-11) direction is in the positive direction, the deviation from the (0-11) direction to the positive (plus) direction 15°, the angle offset from >110> direction is "+15°". In addition, the offset angle θ is -30°≦θ≦+30° in terms of the symmetry of the crystal orientation. In addition, in Fig. 6, the (1-10) direction, the (-101) direction, and the (01-1) direction are directions in which the processing resistance characteristics in the cutting direction are equal in terms of crystal symmetry. The signs of the offset angle θ when these directions are used as the reference are the same. On the other hand, the cutting resistance characteristics of the cutting directions in the (0-11) direction, (-110) direction, and (10-1) direction are different (opposite) from the (1-10) direction. Therefore, the sign of the angle θ offset from the (0-11) direction, (-110) direction, and (10-1) direction is the same as the sign from the (1-10) direction, (-101) direction, and (01-1) direction. ) The sign of the angle θ of the direction deviation is opposite. In addition, the processing resistance characteristics in the cutting direction will be described in detail later.

To give a specific example, the (1-21) direction shown in Figure 5 when the positive and negative directions of θ are regarded as the same reference (the same rotation direction is displayed with the same symbol), the direction from (1-10) Offset +30°, and offset -30° from the (0-11) direction. However, since the cutting resistance characteristics of the (1-10) direction and the (0-11) direction are different (opposite), based on the definition of the present invention, the (1-21) direction will be from (1-10) The angle θ of the direction offset is presented as +30°, and the angle θ of the offset from the (0-11) direction is presented as +30°.

Regarding the single crystal ingot whose central axis direction is >100> direction, as explained later, since the damage on the front and back surfaces of the wafer without cutting direction (due to poor processing resistance) is poor, regardless of the cutting direction, θ =0°. In other words, when the center axis direction is a single crystal ingot of >100> direction, no matter which angle the cutting direction is, it is defined as θ=0°.

Here, FIG. 7 shows the dependence of the cutting direction of the Warp value of the wafer after cutting when slicing a single crystal silicon with an axial direction >111> as investigated by the inventor of the present case. The horizontal axis shows the angle θ[°] that the cutting direction deviates from the >110> direction, and the vertical axis shows the Warp value (relative value). As shown in Figure 7, it can be seen that when the cutting direction is 0°, the Warp value is the best, and as the offset angle increases, the Warp value also deteriorates (increases).

The inventor of this case also investigated the difference in Warp value caused by the cutting time (ie, cutting speed). Figure 8 shows the relationship between the cutting time and the Warp value (relative value) when the angle θ of the cutting direction shifted from the >110> direction of the single crystal silicon with the axial direction >111> is θ=+30° Figure. As shown in Figure 8, even when the cutting direction is +30° from the >110> direction, by making the cutting time longer (lowering the cutting speed), the deterioration of the Warp value can be suppressed. However, the decrease in productivity is significant.

The inventor of this case has worked hard to investigate and found that even if the cutting direction of the workpiece is the direction in which the Warp value is greatly deteriorated (theta direction), multiple workpieces can be cut at the same time. These cutting directions or crystal axis orientations are specified In combination, a simple device can be used, and Warp value can be prevented from deteriorating. Furthermore, productivity can be improved.

First of all, the wire saw, which is the device for cutting a workpiece according to the present invention, will be described with reference to FIG. 1 at the same time. Fig. 1 shows an example of the wire saw of the workpiece cutting processing device of the present invention. The top image of Figure 1 is a view from the front, and the bottom image is a view from the top. The wire saw 100 includes a plurality of cylindrical wire guides 1, 1'that are arranged at a predetermined interval so that their rotation axis directions are parallel, and grooves are formed on the outer surface at predetermined intervals. The grooves of the workpiece are wound into a spiral line 2 at a predetermined pitch to form a line 3, and a workpiece holding portion 5 that can hold a plurality of workpieces (ingots) 4, 4'and the number corresponds to the number of workpieces. , 5'. During operation (cutting and processing of the workpiece), the control unit 6 (omitted in the bottom figure of Fig. 1) controls the thread guides 1, 1'to rotate in the axial direction to make the thread 2 travel in the axial direction. The plurality of workpieces 4, 4'are pressed against the line 3, and the plurality of workpieces 4, 4'are cut into wafer shapes at a plurality of places at the same time to operate.

The wire saw 100, which is a workpiece cutting device of the present invention, has the following structure. The aforementioned structure includes a number corresponding to the number of workpieces to be cut, for example, two or more grips and other workpiece holding parts 5, 5' , And multiple workpieces (crystal ingots) 4, 4'can be arranged side by side and cut at the same time. The control section 6 controls the cutting processing device to perform cutting processing by setting the cutting directions of plural workpieces as described later. In addition, the workpiece cutting device can be applied to either free abrasive type or fixed abrasive type.

Next, the cutting method of the workpiece of the present invention will be explained. A plurality of workpieces (ingots) 4, 4'are arranged side by side and cut at the same time, and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is >111>.

When the workpiece for processing is received, the crystallization characteristics of the workpiece are measured to obtain the crystal axis orientation and other data. After that, calculation of characteristic values such as crystal orientation (direction) of the outer periphery of the workpiece, orientation correction value, etc. is performed. This azimuth correction value is based on the difference between the azimuth of the workpiece and the specification of the workpiece (the surface azimuth of the wafer to be cut), and the correction value of the tilt during cutting. Then, based on the obtained characteristic values, select the combination of the workpieces to be cut and set the cutting direction (described later).

Finally, use the set cutting direction or the calculated correction value to make adjustments so that the workpiece is then held in the workpiece holder of the workpiece holding part and installed on the wire saw. Perform the same procedure for multiple workpieces. Then, cut multiple workpieces at the same time.

Next, the setting of the cutting direction of the workpiece to be cut is explained. Regarding multiple workpieces that are simultaneously cut, set the cutting direction of each workpiece so that the total of the angle θ _n (°) offset from the >110> direction of the cutting direction of each workpiece is -30° or more, 30° or less (-30°≦θ ₁ +θ ₂ +…+θ _n ≦30°). When the sum of angle θ(°) deviated from >110> direction is less than -30° or greater than +30°, the deterioration of Warp value cannot be suppressed. The sum of θ _n (°) is preferably -5°≦θ ₁ +θ ₂ +...+θ _n ≦5°, and more preferably θ ₁ +θ ₂ +...+θ _n =0°.

By setting the cutting direction within such a range, even if the direction in which the Warp value greatly deteriorates (θ direction) has to be used as the cutting direction of the workpiece, cutting processing with less deterioration of the Warp value can be achieved. As a result, it is not possible to use a dedicated cutting device or a dedicated special jig corresponding to the expensive X-Y oblique method, and the wire saw device of the X-θ method can achieve cutting with less deterioration of the Warp value.

With the above setting, even if the direction in which the Warp value greatly deteriorates (θ direction) has to be used as the cutting direction of the workpiece, the reason why the deterioration of the Warp value can be suppressed is as follows. When only one workpiece is cut, as described above, the cutting direction (the cutting direction of the wire) when the workpiece is slicing, the difference in damage between the surface and back of the cut wafer (due to poor processing resistance) changes, and the slicing The quality (mainly the Warp value) has changed significantly. On the other hand, as in the present invention, when cutting a plurality of workpieces at the same time, it can be presumed that the workpiece in the cutting direction that is less likely to cause deterioration of the Warp value functions as a wire guide, thereby suppressing the cut crystal The round surface and the back surface (due to poor processing resistance) have poor damage.

In particular, cutting is performed by setting the cutting direction of each ingot to a plural number of workpiece cutting directions offset from the >110> direction and not all of them are positive or negative. The above effect is higher. In other words, when the cutting direction is set to the angle θ _n (°) that the cutting direction deviates from the >110> direction, the positive and negative signs are mixed for cutting processing, the effect is higher.

Use Figure 2 to illustrate this point. Figure 2 shows the cutting direction of the workpiece (single crystal ingot) when the center axis direction is >111> when the angle θ of the workpiece cutting direction offset from the (1-10) direction is +30° and -30° Diagram of differences. As shown in the "Individual Cutting" in the upper part of Figure 2, for example, when a workpiece with θ=-30° is cut separately (only one piece), the cutting resistance (processing resistance) is poor, and the cutting is performed before the wire cutting. The direction shifts toward the left side, and the shift is the largest at the center of the workpiece, and then it shifts back to the state where the machining resistance is weak (right side). As a result, the cut wafer is warped into the shape shown in the figure (that is, the Warp value is large). On the other hand, when it is a workpiece of θ=+30°, the shape of the wafer obtained by cutting is also the same as that of θ=-30 due to the cutting resistance characteristics of the workpiece symmetrical to the workpiece of θ=-30° ° Symmetrical (the direction of warpage is opposite). In this way, it is considered that the Warp value deteriorates due to the strength of the processing resistance of the crystal surface. In addition, when the symmetry of the crystal is taken into consideration, when the (1-10) direction, the (-101) direction and the (01-1) direction are used as the basis of the offset angle, it is different from the (0-11) direction, ( When the -110) direction and the (10-1) direction are the reference of the offset angle, the relationship between the offset direction of the cutting direction and the direction of warping is symmetric (opposite). For example, when cutting from the direction offset by 15° from the (1-10) direction to the counterclockwise direction and cutting from the direction offset from the (0-11) direction to the counterclockwise direction by 15°, the warpage Although the degree is about the same, the direction of warpage is opposite.

On the other hand, when the cutting direction of the workpiece is the angle θ offset from the (1-10) direction is +30° and -30°, and the two workpieces are arranged side by side and the cutting process is performed at the same time, as shown in Figure 2. As shown in "side-by-side cutting", the directions of the processing resistance acting on the workpieces cancel each other out. As a result, it is considered that the deterioration of the shape of the wafer obtained by cutting, that is, the deterioration of the warp, is suppressed.

From this point of view, if the first and second ingots use single crystal ingots whose central axis direction is >111>, the first ingot is set so that the cutting direction at the time of line cutting is offset from the >110> direction. The shifted angle θ ₁ is in the range of 0°≦θ ₁ ≦30°, and the second ingot is set to the angle θ _{2 that} deviates from the >110> direction when the cutting direction is cut by a line, -30°≦θ ₂ When cutting in the range of ≦0°, the processing resistance can be effectively offset, and a wafer with better Warp value can be obtained.

The inventor of the present case has repeatedly reviewed the results and learned that even if the cutting direction of the workpiece is shifted from the >110> direction by the angle θ other than the combination of workpieces with different signs (positive and negative), the Warp value can be suppressed The deterioration. At this time, according to the experiment of the inventor of the present case, it is clear that not only the Warp value is averaged, but also the workpiece whose Warp value does not deteriorate (lower) is more strongly affected.

In addition, in the combination of cutting directions described above, for plural ingots, it is advisable to make the crystal direction as the reference of the deviation angle θ of the cutting direction the same crystal direction, or the crystal direction as the reference It is unnecessary to mention the cutting direction for different directions. For example, let the cutting direction of the first ingot be the angle θ ₁ offset from the direction (1-10) in Fig. 6, the cutting direction of the second ingot can be similarly from (1-10) The direction offset angle θ ₂ can also be the cutting direction of the second ingot at the angle θ ₂ offset from the (-101) direction, or the angle θ ₂ offset from the (0-11) direction.

As mentioned above, even if the angle θ of the workpiece cutting direction offset from the >110> direction is a combination other than the workpieces with different signs (positive and negative), the deterioration of the Warp value can be suppressed. For example, when a single crystal ingot with a center axis direction of >111> has a cutting direction offset from the >110> direction at an angle θ of θ=0°, wafers with good Warp values can also be obtained. As shown in Figure 7, when the angle θ of the cutting direction offset from the >110> direction is θ=0°, the Warp value will not deteriorate. When this kind of workpiece is used as a workpiece for simultaneous cutting, the effect of suppressing the deterioration of warp is higher.

Let's explain another example of the combination of workpieces. The first ingot uses a single crystal ingot with a center axis direction of >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is -30°≦θ ₁ ≦+30°. In addition, the second ingot is cut using a single crystal ingot with a center axis direction of >100> (in this case, it is defined as θ ₂ =0°), thereby obtaining a wafer with a good Warp value. The single crystal ingot whose central axis direction is >100> will not deteriorate the Warp value even if it is cut separately. At this time, similar to the case where the single crystal ingot whose central axis direction is >111> is used as the second ingot, and the angle θ of the cutting direction shifted from the >110> direction is θ=0°, the warp is suppressed. The worsening effect is even higher.

Just like the second ingot using a single crystal ingot with a center axis direction of >111>, set the cutting direction to deviate from the >110> direction when the angle θ ₂ is θ ₂ =0° or the center axis direction is >100 > Direction of single crystal ingot (from the definition θ ₂ =0°), when using cutting direction or ingot that does not deteriorate even if the Warp value is cut separately, the length and diameter of the second ingot should be The length and diameter of other ingots. When cutting multiple workpieces of different shapes such as length or diameter at the same time, the larger size of the workpiece will be cut separately. If the larger size of the workpiece is cut separately, the cutting direction or ingot will not deteriorate even if the Warp value is cut separately. , You can obtain wafers with good Warp value on all the workpieces that are being cut.

In addition, the representative values of cutting conditions are shown in Table 1 for reference.

[Table 1] project Common cut-off conditions Cut off method Undercut Artifact Workpiece material Monocrystalline silicon Workpiece shape Cylindrical ingot Workpiece diameter ψ125mm Workpiece length The same length as about 100mm Workpiece feed speed 0.10~1.00mm/min line Line speed Average speed 500~900m/min Wire diameter ψ0.12~0.16mm Thread tension 20~30N Line cycle 50~100 seconds/cycle Refining Refining type Free abrasive Abrasive Average particle size 5~15um Coolant Water-soluble coolant Refining supply 50~150kg/min Refining temperature 18.0~30.0℃ [Example]

Hereinafter, examples are given to illustrate the present invention in detail, but the examples do not limit the present invention.

(Reference example 1) The single crystal silicon with the axis orientation >111> was used, and the angle θ of the cutting direction offset from the >110> direction was the direction of θ=0°, and the second crystal ingot was not used. In addition, the cutting time of the reference example 1 and the Warp value of the wafer obtained in the reference example 1 were used as the reference value (1.0) as the reference value for the comparative evaluation of the following examples and comparative examples. (Reference example 2) Use the single crystal silicon with the axis direction>111>, set the angle θ of the cutting direction offset from the>110> direction to the direction of θ=0°, and set the cutting time 1.5 times that of Reference Example 1, and cut. The second ingot was not used. The Warp value of the cut wafer is 0.8.

(Embodiment 1) The first crystal ingot uses single crystal silicon with an axis orientation >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ = +10°. In addition, the second crystal ingot uses single crystal silicon with the axis orientation >111>, and the angle θ ₂ of the cutting direction offset from the >110> direction is θ ₂ =0°. Next, these two workpieces are arranged side by side and cut at the same time. The sum of θ (θ ₁ +θ ₂ ) is +10°. In addition, in Examples 1-6, the cut-off time was 1.5 times that of Reference Example 1. The Warp value of the cut wafer is 1.0 when cut from the first ingot and 1.0 when cut from the second ingot.

(Embodiment 2) The first crystal ingot uses single crystal silicon with an axial direction >111>, and the cutting direction is offset from the >110> direction at an angle θ ₁ = +20°. In addition, the second crystal ingot uses single crystal silicon with an axial direction >111>, and the cutting direction is offset from the >110> direction by an angle θ ₂ =0°. Next, these two workpieces are arranged side by side and cut at the same time. The sum of θ (θ ₁ +θ ₂ ) is +20°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 1.8 when cut from the first ingot and 1.2 when cut from the second ingot.

(Embodiment 3) The first crystal ingot uses single crystal silicon with an axial direction >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ =+30°. In addition, the second crystal ingot uses single crystal silicon with the axis orientation >111>, and the angle θ ₂ of the cutting direction offset from the >110> direction is θ ₂ =0°. Next, the two workpieces are arranged side by side and simultaneously cut. The sum of θ (θ ₁ +θ ₂ ) is +30°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 1.9 from the first ingot and 1.2 from the second ingot.

(Embodiment 4) The first crystal ingot uses single crystal silicon with an axial direction >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ =+30°. In addition, the second crystal ingot uses axis orientation>100>crystal. Next, the two workpieces are arranged side by side and cut at the same time. The sum of θ (θ ₁ +θ ₂ ) is +30°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 1.9 when cut from the first ingot and 1.2 when cut from the second ingot.

(Embodiment 5) The first crystal ingot uses single crystal silicon with an axial direction >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ = +30°. In addition, the second crystal ingot uses single crystal silicon with the axis orientation >111>, and the angle θ ₂ of the cutting direction offset from the >110> direction is θ ₂ =-30°. Next, the two workpieces are arranged side by side and cut at the same time. The sum of θ (θ ₁ +θ ₂ ) is 0°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 1.5 when cut from the first ingot, and 1.5 when cut from the second ingot.

(Embodiment 6) The first crystal ingot uses single crystal silicon with an axial direction >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ =0°. In addition, the second crystal ingot uses single crystal silicon with an axis direction >111>, and the cutting direction is set to an angle θ ₂ θ ₂ =0° that is offset from the >110> direction. Next, the two workpieces are arranged side by side and cut at the same time. The sum of θ (θ ₁ +θ ₂ ) is 0°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 1.0 when cut from the first ingot, and 1.0 when cut from the second ingot.

(Comparative example 1) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=+10°. Otherwise, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 4.0.

(Comparative example 2) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=+20°. Otherwise, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 7.0.

(Comparative example 3) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=+30°. Otherwise, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 8.2.

(Comparative Example 4) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=-30°. Otherwise, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 8.8.

(Comparative Example 5) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=+30°. In addition, the cutting time was 1.5 times that of Reference Example 1, except that the cutting conditions were the same as Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 3.7.

(Comparative Example 6) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=+30°. Also, let the cut-off time be twice that of Reference Example 1. Otherwise, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 2.1.

(Comparative Example 7) The first crystal ingot uses single crystal silicon whose axis orientation is >111>, and the angle θ of the cutting direction offset from the >110> direction is θ=+30°. Also, let the cut-off time be 3 times that of Reference Example 1. Otherwise, the cutting conditions were the same as in Reference Example 1 (the second ingot was not used). The Warp value of the cut wafer is 1.5.

(Comparative Example 8) The first crystal ingot uses a single crystal silicon whose axis orientation is >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ = +30°. In addition, the second crystal ingot uses a single crystal silicon whose axis orientation is >111>, and the angle θ ₂ of the cutting direction offset from the >110> direction is θ ₂ = +10°. The sum of θ (θ ₁ +θ ₂ ) is +40°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 4.0 when cut from the first ingot and 2.0 when cut from the second ingot.

(Comparative Example 9) The first crystal ingot uses a single crystal silicon whose axis orientation is >111>, and the angle θ ₁ of the cutting direction offset from the >110> direction is θ ₁ =-30°. In addition, the second crystal ingot uses a single crystal silicon whose axis orientation is >111>, and the angle θ ₂ of the cutting direction offset from the >110> direction is θ ₂ =-10°. The sum of θ (θ ₁ +θ ₂ ) is -40°. Otherwise, the cutting conditions were the same as in Example 1. The Warp value of the cut wafer is 3.8 when cut from the first ingot and 2.1 when cut from the second ingot.

Table 2 shows the conditions and experimental results of the Examples, Reference Examples, and Comparative Examples.

[Table 2] Number of cut roots Cut-off time (*1) Ingot 1 Ingot 2 θ ₁ +θ ₂ [°] Crystal axis θ ₁ [°] Warp(*2) Crystal axis θ ₂ [°] Warp(*2) Reference example 1 1 1 >111> 0 1.0 - - - - Reference example 2 1 1.5 >111> 0 0.8 - - - - Example 1 2 1.5 >111> 10 1.0 >111> 0 1.0 10 Example 2 2 1.5 >111> 20 1.8 >111> 0 1.2 20 Example 3 2 1.5 >111> 30 1.9 >111> 0 1.2 30 Example 4 2 1.5 >111> 30 1.9 >100> 0 1.2 30 Example 5 2 1.5 >111> 30 1.5 >111> -30 1.5 0 Example 6 2 1.5 >111> 0 1.0 >111> 0 1.0 0 Comparative example 1 1 1 >111> 10 4.0 - - - - Comparative example 2 1 1 >111> 20 7.0 - - - - Comparative example 3 1 1 >111> 30 8.2 - - - - Comparative example 4 1 1 >111> -30 8.8 - - - - Comparative example 5 1 1.5 >111> 30 3.7 - - - - Comparative example 6 1 2 >111> 30 2.1 - - - - Comparative example 7 1 3 >111> 30 1.5 - - - - Comparative example 8 2 1.5 >111> 30 4.0 >111> 10 2.0 40 Comparative example 9 2 1.5 >111> -30 3.8 >111> -10 2.1 -40 *1) The cut-off time is a relative value based on Reference Example 1. *2) Warp is the average value of a batch. In addition, the relative value is displayed based on Reference Example 1.

Figure 3 is based on the data shown in Table 2. The wafers obtained in Reference Example 1, Examples 1-3, 6, and Comparative Example 1-3 show that the cutting direction of the single crystal ingot is shifted from the >110> direction The relationship between the angle θ and the Warp value. Regarding the Warp value, the value of Reference Example 1 is used as the reference (1.0) and displayed as a relative value. Regarding the embodiment, the ingot 1 and the ingot 2 are plotted separately. As shown in FIG. 3, the Warp value of the wafer cut from the ingot 1 of the embodiment is very low compared to the Warp value of the wafer cut from the ingot of the comparative example. In addition, regarding the ingot 2 of Example 1 (the angle θ of the cutting direction shifted from >110> direction = 0°), the Warp value is the same as that of Reference Example 1, and there is no deterioration. In addition, regarding Example 4, since the type of ingot 2 is different, it is not plotted on the same scatter diagram. From Table 2, it is clear that the Warp value of the ingot 2 itself hardly deteriorates. On the other hand, Suppress the deterioration of the Warp value of ingot 1.

Also, it is clear from Table 2 that although the cutting time is 1.5 times that of Reference Example 1 in Examples 1-6, since two pieces are cut at the same time, the actual cutting time of one workpiece is 0.75 times . That is, it can be seen that deterioration of the Warp value can be prevented and productivity can be improved.

Furthermore, comparing the results of Examples 3 and 4 and Comparative Example 5, it is clear that it can be confirmed that the cutting direction of the second ingot will not cause the deterioration of the Warp value or the deterioration of the Warp value even when the second ingot is cut separately. In the case of the ingot, the deterioration of the Warp value after the first ingot is cut can be suppressed.

As described above, even when there is only one workpiece, by making the cutting time longer (lowering the cutting speed), the deterioration of the Warp value can be suppressed (Figure 8, Comparative Example 4-7). However, comparing Example 5 with Comparative Example 7, it is clear that in Example 5, wafers with the same Warp value as Comparative Example 7 can be produced with 4 times the productivity (cutting speed twice, cutting number 2 times) manufacturing.

In addition, the present invention is not limited to the above-mentioned embodiment. The above-mentioned embodiments are examples, and have substantially the same structure as the technical idea described in the scope of the patent application of the present invention, and any one that exhibits the same functions and effects is included in the technical scope of the present invention.

1,1’: Wire guide 2: line 3: line 4,4’: Workpiece (crystal ingot) 5, 5: Workpiece holding part 6: Control Department 100: Workpiece cutting device (wire saw) A: Arrow B: Arrow C: Arrow X: direction Y: direction θ: Offset angle

Fig. 1 shows a schematic diagram of a cutting device for a workpiece according to the present invention. Figure 2 is an explanatory diagram of the suppression of the deterioration of the Warp value. Fig. 3 shows the relationship between the angle θ and the Warp value of the wafer cutting directions obtained in Reference Example 1, Examples 1-3, 6, and Comparative Example 1-3 from the >110> direction. Figure 4 shows the definition of Warp. Figure 5 shows a conceptual diagram of a cross-section perpendicular to the axis of a workpiece (single crystal ingot) with an axis orientation >111>. Figure 6 shows the definition of the cutting direction θ of the workpiece (single crystal ingot) with the axis orientation>111>. Figure 7 shows the dependence of the cutting direction of the Warp value of the wafer after cutting. Figure 8 shows the dependence of the Warp value (relative value) on the cutting time when cutting a workpiece with an axis orientation >111> at an angle of 30° offset from the >110> direction.

X: direction

Y: direction

θ: Offset angle

Claims (21)

A cutting processing method, which is a cutting processing method of a workpiece. A plurality of wire guides are provided, and the plurality of wire guides are arranged at predetermined intervals so that the directions of their rotation axes are parallel to each other and are respectively arranged at predetermined intervals on their outer surfaces A groove is formed, and a line is formed by winding a spiral line at a predetermined pitch in the groove of the wire guide, and n (n≧2) ingots are arranged side by side as a plurality of workpieces for cutting, By rotating the wire guide to make the wire travel in the axial direction, while crimping the plurality of workpieces on the line at the same time, and cutting the plurality of workpieces into a wafer shape at the same time, The workpiece is a single crystal ingot whose central axis direction is >111> or >100>, and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is >111>. The cutting direction is set as follows to cut: When cutting the single crystal ingot with the center axis direction of >111> by line, the angle of the cutting direction offset from the >110> direction is θ(°) When the sum of the θ of the complex number of workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ +θ ₂ +…+θ _n ≦30[However, from the (1-10) direction , (-101) direction) and (01-1) direction offset angle θ with the counterclockwise direction as the positive direction, offset from the (0-11) direction, (-110) direction, and (10-1) direction The angle θ takes the clockwise direction as the positive direction, -30°≦θ≦+30°; and, the θ of the single crystal ingot whose central axis direction is >100> direction is 0° regardless of the cutting direction]. For example, the cutting processing method of item 1 in the scope of patent application, in which, The cutting direction of each ingot is set so that the θ of each of the plural workpieces is not all positive or negative, and cutting is performed. For example, the cutting processing method of the first item of the scope of patent application, wherein the total of θ is set to -5°≦θ ₁ +θ ₂ +...+θ _n ≦5° for cutting. For example, the cutting processing method of the second item of the scope of patent application, wherein the total of the θ is set to -5°≦θ ₁ +θ ₂ +...+θ _n ≦5° for cutting. For example, the cutting processing method of the first item of the scope of the patent application, wherein the total of the θ is set to θ ₁ +θ ₂ +...+θ _n =0° to perform cutting. For example, the cutting processing method of the second item of the scope of patent application, wherein the total sum of θ is set to θ ₁ +θ ₂ +...+θ _n =0° to perform cutting. For example, the cutting processing method of the third item of the scope of patent application, wherein the total sum of θ is set to θ ₁ +θ ₂ +...+θ _n =0° to perform cutting. For example, the cutting processing method of the fourth item in the scope of the patent application, wherein the total sum of θ is set to θ ₁ +θ ₂ +...+θ _n =0° to perform cutting. For example, the cutting method of any one of items 1 to 8 of the scope of patent application, wherein the plural workpieces are the first ingot and the second ingot, and the center axis direction of the first ingot is>111> direction single crystal ingot, and set the angle θ ₁ that the cutting direction deviates from the >110> direction when the first ingot is cut by a line in the range of 0°≦θ ₁ ≦30°. 2 The crystal ingot uses a single crystal ingot whose central axis direction is >111> and is set to cut the second crystal ingot by a line. The angle of the cutting direction offset from the >110> direction θ ₂ is -30°≦ θ ₂ ≦0°, to cut. For example, the cutting method of any one of items 1 to 8 of the scope of patent application, wherein the plural workpieces are the first ingot and the second ingot, and the center axis direction of the first ingot is>111> direction of the single crystal ingot, and set to cut the first ingot by a line, the cutting direction is offset from the direction of >110> when the angle θ ₁ is -30°≦θ ₁ ≦30°, the second The ingot is cut using a single crystal ingot with a center axis direction of >100>. For example, the cutting method of item 9 of the scope of patent application, of which, In the first ingot or the second ingot, let the length and diameter of the second ingot be equal to or greater than the length and diameter of the first ingot. For example, the cutting processing method of item 10 in the scope of patent application, of which, In the first ingot or the second ingot, let the length and diameter of the second ingot be equal to or greater than the length and diameter of the first ingot. A device for cutting and processing a workpiece, comprising: a plurality of wire guides, which are arranged at predetermined intervals so that the directions of the rotation axis are parallel to each other, and grooves are formed on the respective outer surfaces at predetermined intervals; The groove of the wire guide is formed by winding a spiral wire at a predetermined pitch; n workpiece holding parts, respectively holding n (n≧2) ingots that are used as a plurality of workpieces for cutting; And a control part; the control part controls to make the wire travel in the axial direction by rotating the wire guide, and crimping the plurality of workpieces to the line at the same time, and the plurality of workpieces at the same time Cut and process a plurality of places into a wafer shape, and the control unit controls to select the workpiece from the single crystal ingot whose central axis direction is >111> direction or >100> direction, and make at least one of the plurality of workpieces For single crystal ingots whose central axis direction is >111>, the cutting direction of each ingot is set as follows: When the single crystal ingot whose central axis direction is >111> direction is cut by a line When the angle of the cutting direction offset from >110> is set to θ(°), the sum of the respective θ of the plural workpieces (θ ₁ +θ ₂ +…+θ _n ) is -30°≦θ ₁ + θ ₂ +…+θ _n ≦30°, [However, the offset angle θ from the (1-10) direction, (-101) direction) and (01-1) direction is the counterclockwise direction as the positive direction, from ( 0-11) direction, (-110) direction, and (10-1) direction offset angle θ takes the clockwise direction as the positive direction, -30°≦θ≦+30°; also, the central axis direction is >100 > The θ of the single crystal ingot in the direction is 0° regardless of the cutting direction]. For example, the cutting device for the work piece in the scope of patent application, in which, The control unit performs the following control to cut off: The cutting direction of each ingot is set so that the θ of each of the plural workpieces is not all positive or negative. For example, the work piece cutting device of item 13 of the scope of patent application, wherein the control unit performs the following control to perform cutting: Set the sum of θ to -5°≦θ ₁ +θ ₂ +…+θ _n ≦ 5°. For example, the work piece cutting device of item 14 of the scope of patent application, wherein the control unit performs the following control to perform cutting: Set the sum of θ to -5°≦θ ₁ +θ ₂ +...+θ _n ≦ 5°. For example, the cutting device for the workpiece in any one of the 13th to 16th items in the scope of the patent application, wherein the control part performs the following control to perform cutting: Set the sum of θ to θ ₁ + θ ₂ +... +θ _n =0°. For example, the cutting and processing device of any one of the 13th to 16th items in the scope of patent application, wherein the cutting and processing device cuts the first ingot and the second ingot as the plural workpieces, The control unit implements the following control to perform cutting: Use a single crystal ingot whose central axis direction is >111> as the first ingot, and set the cutting direction when cutting the first ingot by a line to The angle θ ₁ deviated from the >110> direction is within the range of 0°≦θ ₁ ≦30°; the single crystal ingot whose central axis direction is >111> is used as the second ingot and will be cut by a line When the cutting direction of the second ingot is set, the angle θ ₂ deviated from the >110> direction is -30°≦θ ₂ ≦0°. For example, the cutting and processing device for workpieces in the scope of patent application, wherein the cutting and processing device cuts the first ingot and the second ingot as the plural workpieces, and the control unit performs the following control to cut : Use a single crystal ingot with a center axis direction of >111> as the first ingot, and set the cutting direction when cutting the first ingot with a line to an angle θ offset from the >110> direction ₁ is the range of 0°≦θ ₁ ≦30°; use the single crystal ingot whose central axis direction is >111> as the second ingot, and cut the second ingot with a line Set the angle θ ₂ offset from the >110> direction to -30°≦θ ₂ ≦0°. If the cutting and processing device for the workpiece in any one of the 13th to 16th items in the scope of the patent application, the cutting and processing device cuts the first and second ingots as the plural workpieces, and the control unit implements The cutting is performed by the following control: Use the single crystal ingot with the direction of the center axis as the first ingot, and set the cutting direction when cutting the first ingot by a line to >110> The angle θ ₁ of the direction deviation is -30°≦θ ₁ ≦30°; and an ingot whose central axis direction is >100> is used as the second ingot. For example, the cutting and processing device for workpieces in the scope of patent application, wherein the cutting and processing device cuts the first ingot and the second ingot as the plural workpieces, and the control unit performs the following control to cut : Use a single crystal ingot with a center axis direction of >111> as the first ingot, and set the cutting direction when cutting the first ingot with a line to an angle θ offset from the >110> direction ₁ is -30°≦θ ₁ ≦30°; and an ingot whose central axis direction is >100> is used as the second ingot.

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