WO2015040695A1

WO2015040695A1 - Device for producing and method for producing compound semiconductor substrate

Info

Publication number: WO2015040695A1
Application number: PCT/JP2013/075145
Authority: WO
Inventors: 雅博中山
Original assignee: 住友電気工業株式会社
Priority date: 2013-09-18
Filing date: 2013-09-18
Publication date: 2015-03-26

Abstract

This method for producing a compound semiconductor substrate (10) has the steps that follow. A plurality of holding sections (5) are prepared having a holding surface (5d), the inclination of the holding surface (5d) being adjustable. A plurality of ingots (1) comprising a compound semiconductor are respectively held by the plurality of holding sections (5). By means of adjusting the inclination of each holding surface (5d) of the plurality of holding sections (5), the attitude of each of the plurality of ingots (1) is adjusted. By means of simultaneously cutting each of the plurality of ingots (1), a compound semiconductor substrate (10) having a desired primary surface (2) is cut out. As a result, it is possible to provide a device for producing and method for producing a compound semiconductor substrate (10) that are able to produce a substrate having a low amount of warping and a desired plane orientation by means of a simple method.

Description

Method and apparatus for manufacturing compound semiconductor substrate

The present invention relates to a method and an apparatus for manufacturing a compound semiconductor substrate.

Conventionally, as a means for cutting a single crystal ingot, a method of slicing a single crystal ingot with saw wires has been widely practiced. The method can be roughly classified into a method using loose abrasive grains and a method using fixed abrasive grains. In the former, abrasive grains such as diamond and GC (Green Carborundum; high purity green silicon carbide) are dispersed in a slurry state, followed by the reciprocating motion of the saw wire in the form of free abrasive grains, and cut by the cutting force of the abrasive grains. In the latter, a saw wire with diamond abrasive grains fixed to the surface is used, and cutting is performed with the cutting force of the abrasive blade. In recent years, fixed-abrasive processing with high cutting ability is becoming indispensable for processing difficult-to-cut materials such as sapphire, silicon carbide, nitride semiconductor, and ceramic. For example, Japanese Patent Laid-Open No. 9-17755 (Patent Document 1) discloses a method of slicing a silicon semiconductor. According to the publication, it is disclosed that there is an effect of suppressing breakage during processing by disposing the crystal so that the wire traveling direction for slicing does not coincide with the crushing direction of the crystal.

In addition, Japanese Patent Laid-Open No. 11-262917 (Patent Document 2) also discloses a method related to slice processing of a silicon semiconductor. According to the publication, it is disclosed that it is desirable to perform processing by arranging the OF (orientation flat) direction or the notch direction in a specific direction in order to ensure the slice main surface orientation accuracy. In any of the techniques, there are references to the damage during processing and the accuracy of the principal plane orientation, but the problem between the slice direction and the warp characteristics is not extended. On the other hand, Japanese Laid-Open Patent Publication No. 9-17755 (Patent Document 1) discloses a method for slicing a compound semiconductor, and mentions a problem of warping due to material anisotropy.

For example, near-isotropic crystals such as silicon do not cause significant warping anisotropy depending on the crystal slice direction. Therefore, a substrate having a desired plane orientation and a small amount of warpage can be manufactured relatively easily.

Japanese Patent Laid-Open No. 9-17755 Japanese Patent Laid-Open No. 11-262917

However, since compound semiconductors have strong anisotropy in crystals, the warpage of the substrate varies greatly depending on the cutting direction of the ingot. Therefore, it has been difficult to obtain a substrate having a desired plane orientation and a small amount of warpage. Further, for example, a compound semiconductor such as silicon carbide has an ingot length of, for example, about 20 mm at the current technical level, and it is difficult to grow a long ingot. Therefore, since the number of substrates that can be taken from one ingot is small, a large number of slicers are required to mass-produce substrates.

The present invention has been made to solve the above-described problems, and is a simple method for manufacturing a compound semiconductor substrate that can efficiently manufacture a substrate having a desired plane orientation and a small amount of warpage. A method and manufacturing apparatus are provided.

The method for manufacturing a compound semiconductor substrate according to the present invention includes the following steps. A plurality of holding portions having a holding surface and capable of adjusting the inclination of the holding surface are prepared. Each of a plurality of ingots made of a compound semiconductor is held by a plurality of holding portions. By adjusting the inclinations of the holding surfaces of the plurality of holding portions, the postures of the plurality of ingots are adjusted. By cutting each of the plurality of ingots simultaneously, a compound semiconductor substrate having a desired main surface is cut out.

According to the method for manufacturing a compound semiconductor substrate according to the present invention, the postures of the plurality of ingots are adjusted, and each of the plurality of ingots is cut simultaneously. Therefore, it is possible to efficiently manufacture a compound semiconductor substrate having a desired plane orientation and a small amount of warpage by a simple method.

Preferably, the above-described method of manufacturing a compound semiconductor substrate further includes a step of measuring a deviation angle of a crystal orientation of each crystal end face of each of the plurality of ingots with respect to a desired main surface. In the step of adjusting the postures of the plurality of ingots, the postures of the plurality of ingots are adjusted based on the shift angle.

Thereby, since the posture of the ingot is accurately adjusted, a compound semiconductor substrate having a desired plane orientation and a small amount of warpage can be manufactured with high accuracy.

In the above-described method for manufacturing a compound semiconductor substrate, the compound semiconductor is preferably silicon carbide. Since silicon carbide is a high-hardness material, it takes a long time to cut the ingot. According to the above-described method for manufacturing a compound semiconductor substrate, it is possible to significantly reduce the cutting time of each ingot and improve the production efficiency as compared with the case of cutting ingots one by one.

Preferably, in the above-described method for manufacturing a compound semiconductor substrate, each of the plurality of ingots has a hexagonal crystal structure, and in the step of cutting out the compound semiconductor substrate, each of the plurality of ingots has a (1-100) orientation ( 15 ° ± 30 ° × n (where n is an integer)) cut along a direction inclined by ± 5 °.

A hexagonal single crystal usually has anisotropy in the <1-100> orientation and the <11-20> orientation. Therefore, by cutting the ingot along an intermediate position between the <1-100> orientation and the <11-20> orientation, the distortion due to processing damage is antagonized, and the amount of warping of the compound semiconductor substrate after slicing is reduced. Can do.

Preferably, in the above method for manufacturing a compound semiconductor substrate, each of the plurality of ingots has a cubic crystal structure, and in the step of cutting out the compound semiconductor substrate, each of the plurality of ingots is (45 °) from the <011> orientation. ± 90 ° × n (where n is an integer)) Cut along a direction inclined by ± 5 °.

A cubic silicon carbide single crystal usually has anisotropy in the <011> and <0-11> orientations. Therefore, by cutting the ingot along the intermediate position between the <011> direction and the <0-11> direction, it is possible to antagonize distortion due to processing damage and to reduce the amount of warping of the compound semiconductor substrate after slicing. .

The apparatus for manufacturing a compound semiconductor substrate according to the present invention has a plurality of holding portions and a cutting portion. The holding portion has a holding surface and is capable of adjusting the inclination of the holding surface, and is a portion for holding each of a plurality of ingots made of a compound semiconductor. The cutting portion is a portion that can simultaneously slice each of the plurality of ingots.

The apparatus for manufacturing a compound semiconductor substrate according to the present invention includes a plurality of holding units capable of adjusting the inclination of the holding surface and a cutting unit capable of simultaneously slicing each of the plurality of ingots. Therefore, a compound semiconductor substrate having a desired plane orientation and a small amount of warpage can be manufactured by a simple method.

Preferably, in the above-described compound semiconductor substrate manufacturing apparatus, each holding surface of the plurality of holding units can rotate about the normal line of the holding surface and can rotate about a line orthogonal to the normal line. . Thereby, the attitude | position of an ingot can be adjusted accurately. Note that the fact that the holding surface can be rotated about the line with the holding surface means that the holding surface can be moved by a certain angle along the direction of rotation about the axis with the holding surface as a rotation axis. It doesn't matter.

Preferably, the above-described compound semiconductor substrate manufacturing apparatus further includes a measuring unit for measuring a deviation angle of the crystal orientation of each crystal end face of the plurality of ingots. Thereby, the attitude | position of an ingot can be adjusted accurately based on the deviation | shift angle of a surface orientation.

According to the present invention, a substrate having a desired plane orientation and a small amount of warpage can be manufactured by a simple method.

It is a front view which shows roughly the structure of the manufacturing apparatus of the compound semiconductor substrate in one embodiment of this invention. It is a perspective view for demonstrating roughly the shape of an ingot. It is a perspective view for demonstrating schematically the shape of a compound semiconductor substrate. It is a front view which shows roughly the structure of the manufacturing apparatus of the compound semiconductor substrate in one embodiment of this invention. It is a figure for demonstrating the method to measure the surface orientation of a compound semiconductor substrate. It is a flowchart explaining roughly the manufacturing method of the compound semiconductor substrate in one embodiment of this invention. It is a schematic plan view for demonstrating the process of adjusting the attitude | position of a several ingot. It is a schematic side view for demonstrating the process of adjusting the attitude | position of a several ingot. It is a schematic side view for demonstrating the process of measuring the attitude | position of several ingots. It is a schematic front view for demonstrating the process of measuring the attitude | position of a several ingot. It is a schematic side view for demonstrating arrangement | positioning of a several ingot. It is a schematic plan view for demonstrating arrangement | positioning of a several ingot. It is a schematic front view for demonstrating the process of cut | disconnecting the ingot whose crystal structure is a hexagonal crystal. It is a schematic front view for demonstrating the process of cut | disconnecting the ingot whose crystal structure is a cubic crystal.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

In the crystallographic description in this specification, the individual orientation is indicated by [], the collective orientation is indicated by <>, the individual plane is indicated by (), and the collective plane is indicated by {}. As for the negative index, “−” (bar) is added on the number in crystallography, but in the present specification, a negative sign is attached before the number. The angle is described using a system in which the omnidirectional angle is 360 degrees.

Referring to FIG. 1, the configuration of the compound semiconductor substrate manufacturing apparatus according to the present embodiment will be described.

As shown in FIG. 1, the compound semiconductor substrate manufacturing apparatus 100 according to the present embodiment mainly includes a holding unit 5, a wire W, and rollers R1, R2, and R3. The holding part 5 is for holding the compound semiconductor ingot 1. The holding part 5 has a holding surface 5 d that holds the ingot 1. A pedestal 4 for directly holding the ingot 1 is disposed on the holding surface 5d. The pedestal 4 is made of carbon, for example.

A single wire W is spirally wound around the rollers R1, R2, and R3. The wire W is a cutting part for cutting the ingot. Above the holding part 5, a wire W row in which a plurality of wires W are arranged substantially in parallel is formed. When the holding portion 5 on which the ingot 1 is mounted approaches the direction of the plurality of wires W and comes into contact with the wires W, the ingot 1 is cut and a plurality of semiconductor substrates can be obtained.

The wire W is configured to be movable as each of the rollers R1, R2, and R3 rotates in the same direction. In addition, the rollers R1, R2, and R3 alternately repeat forward rotation and reverse rotation so that the wire W stretched between the rollers R1 and R2 can reciprocate along the substantially horizontal direction M on the holding unit 5. It is configured. Thereby, the wire W is comprised so that the ingot 1 can be cut | disconnected. When the ingot 1 and the wire W are relatively close to each other, the ingot 1 is cut along the cutting direction SD.

The shape of the ingot will be described with reference to FIG. As shown in FIG. 2, ingot 1 is made of, for example, silicon carbide and has a substantially cylindrical shape. OF (orientation flat) and IF (index flat) are formed along the crystal growth direction in the ingot 1 used in the method for manufacturing the compound semiconductor substrate of the present embodiment. The crystal end face 3 of the ingot 1 is, for example, a {0001} face just or a face off by 4 to 8 degrees. A broken line in FIG. 2 indicates a cut surface of the ingot 1. The compound semiconductor substrate 10 is cut out by cutting the ingot 1 along the broken line.

The compound semiconductor substrate 10 will be described with reference to FIG. The compound semiconductor substrate 10 has a main surface 2 and side surfaces, and an OF surface and an IF surface are formed on the side surfaces. The compound semiconductor substrate 10 has a diameter D and a thickness T. The thickness T corresponds to the interval between the plurality of wires W. The plane orientation of the main surface 2 of the compound semiconductor substrate 10 may be the same as or different from the plane orientation of the crystal end face 3 of the ingot 1.

Referring to FIG. 4, a SUS unit 6 is provided below the holding unit 5. The holding unit 5 is fixed to the stage 7 by bringing the SUS unit 6 into contact with the inner wall surface 7 a of the stage 7 of the wire saw and pressing the SUS unit 6 against the inner wall surface 7 a of the stage 7 with the clamp screw 8. The stage 7 is configured to be movable in a direction approaching the wire W. When the stage 7 approaches the wire W, the ingot 1 comes into contact with the wire W, and the ingot 1 is cut along the cutting direction SD by the wire W. In the present embodiment, the example where the stage 7 approaches the wire W has been described. However, the ingot 1 may be cut when the wire W approaches the stage 7.

Next, the configuration of the goniometer as the holding unit 5 will be described. The goniometer has a holding surface 5d, and the ingot 1 is disposed on the holding surface 5d. The goniometer is configured to be capable of adjusting the posture of the ingot 1 disposed on the holding surface 5d by changing the angle of the holding surface 5d.

The goniometer is configured to be able to rotate the holding surface 5d around the normal line of the holding surface 5d. Further, the holding surface 5d is configured to be rotatable with a line orthogonal to the normal line as a rotation axis. That is, the holding surface 5d can be rotated about two axes.

With reference to FIG. 5, an X-ray measurement unit that measures the deviation angle of the plane orientation of the crystal end face 3 of the ingot 1 will be described. As shown in FIG. 5, the X-ray measurement unit 11 as a measurement unit includes an irradiation unit 12 and a detection unit 13. By irradiating the crystal end surface 3 with X-rays by the irradiation unit 12 and detecting the X-ray reflection angle with the detection unit 13, the deviation angle of the crystal orientation of the crystal end surface 3 with respect to a desired surface can be measured. The deviation angle is measured with respect to the horizontal direction (x direction) and the vertical direction (y direction) of the crystal end face 3 of the ingot 1 as described later.

Next, a method for manufacturing the compound semiconductor substrate according to the present embodiment will be described.
First, a holding part preparation process (S10: FIG. 6) is implemented. Specifically, a plurality of goniometers as the holding unit 5 capable of adjusting the inclination of the holding surface 5d are prepared. As described above, the goniometer can rotate the holding surface 5d with the normal line of the holding surface 5d as the rotation axis, and can rotate the holding surface 5d with the line orthogonal to the normal line as the rotation axis.

Next, an ingot holding step (S20: FIG. 6) is performed. Specifically, referring to FIG. 4, each of a plurality of ingots made of a compound semiconductor is held on holding surfaces 5d of a plurality of goniometers.

Next, the step of measuring the orientation error angle of the crystal end face of the ingot (S30: FIG. 6) is performed. Specifically, as shown in FIG. 5, the ingot 1 irradiates the crystal end surface 3 with X-rays by the irradiation unit 12 of the X-ray measurement unit 11, and the X-ray reflection angle is detected by the detection unit 13. Thus, the deviation angle of the crystal orientation of the crystal end face 3 with respect to the desired main surface 2 is measured. The deviation angle of the crystal orientation of the crystal end face 3 with respect to the desired main surface 2 is measured along the horizontal direction and the vertical direction. In other words, as shown in FIG. 5, the crystal end face 3 of the ingot 1 is irradiated with X-rays so that the X-ray irradiation direction has a y-direction component, and the first misorientation angle is measured. Next, for example, the ingot is rotated 90 ° about the z axis as a rotation axis. The crystal end face 3 of the ingot 1 is irradiated with X-rays so that the X-ray irradiation direction has a component in the x direction, and the second misorientation angle is measured. As described above, the deviation angle of the crystal orientation of the crystal end face 3 with respect to the desired main surface 2 is measured with respect to the horizontal direction (x direction) and the vertical direction (y direction). The first azimuth deviation angle and the second azimuth deviation angle are calculated as coordinate-converted numerical values.

In addition, when the ingot 1 is cut, the arrangement of the ingot at the time of X-ray measurement is the same as the arrangement of the ingot at the time of cutting so that the main surface 2 of the compound semiconductor substrate 10 cut out has a desired plane orientation. The origin is adjusted so that

Next, a step of detecting a deviation angle in the horizontal direction (x direction) and the vertical direction (y direction) of the crystal end face of the ingot is performed. Specifically, referring to FIG. 9 and FIG. 10, for example, using two micrometers S <b> 1 and S <b> 2 arranged along the vertical direction, the vertical direction (y direction) of the crystal end surface 3 of the ingot 1 is used. A deviation angle (first deviation angle) with respect to the cut surface is measured. Further, using two micrometers S3 and S4 arranged along the horizontal direction (x direction), a deviation angle (second deviation angle) of the crystal end face 3 of the ingot 1 with respect to the horizontal cut surface is measured. Is done. The cut surface is a surface on which the wire W moves when the ingot 1 is cut by the wire W.

The detection of the deviation angle is performed, for example, by measuring the first distance between the first micrometer S1 and the crystal end face 3 of the ingot 1 and the second distance between the second micrometer S2 and the crystal end face of the ingot 1. Is done. By calculating the difference between the first distance and the second distance, the deviation angle of the crystal end face 3 of the ingot 1 is calculated. The measurement of the deviation angle may be performed using a laser sensor.

Next, an ingot posture adjustment step (S40: FIG. 6) is performed. In this step, the postures of the plurality of ingots 1 held on the holding surfaces are adjusted by changing the inclinations of the holding surfaces 5d of the plurality of goniometers. The adjustment of the posture of the ingot 1 is performed based on the first azimuth deviation angle and the second azimuth deviation angle measured by the X-ray measurement unit 11. Preferably, the adjustment of the posture of the ingot 1 is performed in addition to the first azimuth deviation angle and the second azimuth deviation angle, and the first deviation angle and the second deviation measured by the first micrometers S1 to S4. Based on the angle.

Referring to FIG. 7, the posture of ingot 1 is changed by angle θ by rotating holding surface 5d within holding surface 5d (xz plane) with a goniometer. In addition, referring to FIG. 8, the posture of ingot 1 is changed by angle γ by rotating holding surface 5 d in a plane (yz plane) perpendicular to holding surface 5 d by a goniometer. 7 and 8, the z direction is a direction in which the ingot 1 grows. In this way, when the ingot 1 is cut, the posture of the ingot 1 is adjusted biaxially so that the main surface 2 of the cut out compound semiconductor substrate 10 has a desired plane orientation.

Referring to FIG. 11 and FIG. 12, a substrate cutting process (S50: FIG. 6) is performed. First, each of the plurality of ingots 1 is arranged along the crystal growth direction (z direction) of the ingot 1. In the present embodiment, three

ingots

1 a, 1 b, 1 c are arranged in series along the crystal growth direction of ingot 1. Each of the three

ingots

1a, 1b, and 1c is configured so that when the ingot 1 is cut by the wire W, the main surface 2 of the compound semiconductor substrate 10 has a desired plane orientation. It is arranged with the posture adjusted. The plurality of ingots 1 may be arranged side by side in the horizontal direction (x direction).

Each of the plurality of ingots 1 is simultaneously cut by the plurality of wires W along the direction indicated by the broken line in FIG. Thereby, a plurality of compound semiconductor substrates 10 having the desired main surface 2 are cut out.

Next, the cutting direction of the ingot 1 will be described.
FIG. 13 is a schematic view of an ingot viewed from the growth direction when the crystal structure of the compound semiconductor forming the ingot is a hexagonal crystal. The crystal plane parallel to the paper is the {0001} plane. When the crystal structure of the compound semiconductor forming the ingot 1 is a hexagonal crystal, each of the plurality of ingots is tilted from the <1-100> orientation by (15 ° ± 30 ° × n (where n is an integer)) ± 5 °. It is preferable to cut along the direction. That is, it is cut in the direction along the broken line shown in FIG. A desirable cutting direction SD is a direction shifted by 30 ° in the xy plane. For example, a hexagonal silicon carbide single crystal usually has anisotropy in the <1-100> orientation and the <11-20> orientation. Having anisotropy means that the properties differ depending on the normal direction. Therefore, by cutting the ingot along the intermediate position between the <1-100> orientation and the <11-20> orientation, it is possible to antagonize distortion due to processing damage and reduce the amount of warping after slicing.

FIG. 14 is a schematic view of an ingot viewed from the growth direction when the crystal structure of the compound semiconductor forming the ingot is a cubic crystal. The crystal plane parallel to the paper is the {001} plane. When the crystal structure of the compound semiconductor forming the ingot is a cubic crystal, each of the plurality of ingots is inclined in the direction inclined by ± 5 ° (45 ° ± 90 ° × n (where n is an integer)) from the <011> orientation. Preferably cut along. That is, it is cut in the direction along the broken line shown in FIG. A desirable cutting direction SD is a direction shifted by 90 ° in the xy plane. For example, a cubic silicon carbide single crystal usually has anisotropy in the <011> orientation and the <0-11> orientation. Having anisotropy means that the properties differ depending on the normal direction. Therefore, by cutting the ingot along an intermediate position between the <011> direction and the <0-11> direction, it is possible to antagonize distortion due to processing damage and reduce the amount of warping after slicing.

In the present embodiment, silicon carbide (SiC) has been described as an example of the compound semiconductor material forming ingot 1, but is not limited thereto. The material forming the ingot 1 may be, for example, GaN, GaAs, GaP, InP, SiGe, or other materials.

Next, functions and effects of the semiconductor substrate manufacturing method according to the present embodiment will be described.
According to the method for manufacturing a compound semiconductor substrate according to the present embodiment, the postures of the plurality of ingots 1 are adjusted, and each of the plurality of ingots 1 is cut simultaneously. Therefore, the compound semiconductor substrate 10 having a desired plane orientation and a small amount of warpage can be manufactured by a simple method.

Further, according to the method for manufacturing the compound semiconductor substrate according to the present embodiment, the deviation angle of the crystal orientation of each crystal end face 3 of the plurality of ingots 1 with respect to the desired principal surface 2 is measured. Thereafter, the postures of the plurality of ingots 1 are adjusted based on the deviation angle. Thereby, since the attitude | position of the ingot 1 is adjusted with a sufficient precision, the compound semiconductor substrate which has a desired surface orientation and a small curvature amount with a sufficient precision can be manufactured.

Furthermore, according to the method for manufacturing a compound semiconductor substrate according to the present embodiment, the compound semiconductor is silicon carbide. Since silicon carbide is a high-hardness material, it takes a long time to cut the ingot. According to the method for manufacturing a compound semiconductor substrate according to the present embodiment, the cutting time of the ingot 1 can be significantly shortened as compared with the case where the ingots 1 are cut one by one.

Furthermore, according to the method for manufacturing a compound semiconductor substrate according to the present embodiment, each of the plurality of ingots 1 has a hexagonal crystal structure, and in the step of cutting the compound semiconductor substrate 10, each of the plurality of ingots is It is cut along a direction inclined by (15 ° ± 30 ° × n (where n is an integer)) ± 5 ° from the <1-100> orientation.

A hexagonal silicon carbide single crystal usually has anisotropy in the <1-100> and <11-20> orientations. Therefore, by cutting the ingot 1 along an intermediate position between the <1-100> orientation and the <11-20> orientation, the distortion due to processing damage is antagonized, and the warpage amount of the compound semiconductor substrate 10 after slicing is reduced. can do.

Furthermore, according to the method for manufacturing a compound semiconductor substrate according to the present embodiment, each of the plurality of ingots 1 has a cubic crystal structure, and in the step of cutting the compound semiconductor substrate, each of the plurality of ingots 1 It is cut along a direction inclined by (45 ° ± 90 ° × n (where n is an integer)) ± 5 ° from the <011> orientation.

A cubic silicon carbide single crystal usually has anisotropy in the <011> and <0-11> orientations. Therefore, by cutting the ingot 1 along the intermediate position between the <011> direction and the <0-11> direction, the distortion due to processing damage is antagonized, and the compound semiconductor substrate 10 with a small amount of warping after slicing is manufactured. be able to.

Furthermore, the compound semiconductor substrate manufacturing apparatus according to the present embodiment includes a plurality of holding portions 5 that can adjust the inclination of the holding surface 5d, and a wire W as a cutting portion that can simultaneously slice each of the plurality of ingots 1. have. Therefore, the compound semiconductor substrate 10 having a desired plane orientation and a small amount of warpage can be manufactured by a simple method.

Further, in the compound semiconductor substrate manufacturing apparatus according to the present embodiment, each holding surface 5d of the plurality of holding portions 5 is rotatable about the normal line of the holding surface 5d and is orthogonal to the normal line. Can be rotated around the axis. Thereby, the attitude | position of the ingot 1 can be adjusted accurately.

Furthermore, the compound semiconductor substrate manufacturing apparatus according to the present embodiment further includes an X-ray measurement unit 11 for measuring the deviation angle of the crystal orientation of each crystal end face 3 of the plurality of ingots 1. Thereby, the attitude | position of the ingot 1 can be accurately adjusted based on the deviation | shift angle of a surface orientation.

It should be considered that the embodiment disclosed this time is illustrative in all respects and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 ingot, 2 main surface, 3 crystal end surface, 4 pedestal, 5 holding part, 5d holding surface, 6 SUS part, 7 stage, 7a side wall surface, 8 clamp screw, 10 compound semiconductor substrate, 11 X-ray measuring part, 12 irradiation Part, 13 detection part.

Claims

Preparing a plurality of holding portions having a holding surface and capable of adjusting the inclination of the holding surface;
A step of holding each of a plurality of ingots made of a compound semiconductor by the plurality of holding portions;
Adjusting the posture of each of the plurality of ingots by adjusting the inclination of each of the holding surfaces of the plurality of holding portions; and
And a step of cutting a compound semiconductor substrate having a desired main surface by simultaneously cutting each of the plurality of ingots.
Measuring the angle of deviation of the crystal orientation of each of the plurality of ingots with respect to the desired principal plane,
2. The method of manufacturing a compound semiconductor substrate according to claim 1, wherein in the step of adjusting the postures of the plurality of ingots, the postures of the plurality of ingots are adjusted based on the shift angle.
The method of manufacturing a compound semiconductor substrate according to claim 1 or 2, wherein the compound semiconductor is silicon carbide.
Each of the plurality of ingots has a hexagonal crystal structure,
In the step of cutting out the compound semiconductor substrate, each of the plurality of ingots is cut along a direction tilted by (15 ° ± 30 ° × n (where n is an integer)) ± 5 ° from the <1-100> orientation. The method for producing a compound semiconductor substrate according to any one of claims 1 to 3, wherein:
Each of the plurality of ingots has a cubic crystal structure,
In the step of cutting out the compound semiconductor substrate, each of the plurality of ingots is cut along a direction inclined by (45 ° ± 90 ° × n (where n is an integer)) ± 5 ° from the <011> orientation. The method for producing a compound semiconductor substrate according to any one of claims 1 to 3.
A plurality of holding portions for holding each of a plurality of ingots made of a compound semiconductor, each having a holding surface, the inclination of the holding surface being adjustable;
An apparatus for manufacturing a compound semiconductor substrate, comprising: a cutting section capable of simultaneously slicing each of the plurality of ingots.
The compound according to claim 6, wherein the holding surface of each of the plurality of holding portions is rotatable about a normal line of the holding surface and is rotatable about a line orthogonal to the normal line. Semiconductor substrate manufacturing equipment.
The apparatus for manufacturing a compound semiconductor substrate according to claim 6 or 7, further comprising a measurement unit for measuring a deviation angle of a plane orientation of each crystal end face of each of the plurality of ingots.