WO2018042864A1

WO2018042864A1 - Method for producing semiconductor substrate

Info

Publication number: WO2018042864A1
Application number: PCT/JP2017/024308
Authority: WO
Inventors: 松本　直樹; 松島　彰
Original assignee: 住友電気工業株式会社
Priority date: 2016-08-31
Filing date: 2017-07-03
Publication date: 2018-03-08

Abstract

This method for producing a semiconductor substrate comprises the following steps. While measuring the outer diameter of a wire wherein diamond abrasive grains are fixed to a core wire, a semiconductor is sliced with the wire. A condition for slicing the semiconductor is adjusted on the basis of the measured outer diameter.

Description

Manufacturing method of semiconductor substrate

The present disclosure relates to a method for manufacturing a semiconductor substrate. This application claims priority based on Japanese Patent Application No. 2016-169518, which is a Japanese patent application filed on August 31, 2016. All the descriptions described in the Japanese patent application are incorporated herein by reference.

Japanese Patent Application Laid-Open No. 11-188599 (Patent Document 1) discloses a wire diameter detecting device capable of measuring the outer diameter of a fixed abrasive wire while traveling. In the wire diameter detection device, the operation of the ingot cutting device can be stopped when the outer diameter of the wire becomes a predetermined value or less.

Japanese Patent Laid-Open No. 11-188599

The semiconductor substrate manufacturing method according to the present disclosure includes the following steps. The semiconductor is sliced by using the wire while measuring the outer diameter of the wire in which the diamond abrasive grains are fixed to the core wire. Based on the measured outer diameter, the semiconductor slicing conditions are adjusted.

FIG. 1 is a schematic perspective view showing a configuration of a semiconductor substrate manufactured by the method for manufacturing a semiconductor substrate according to the present embodiment. FIG. 2 is a schematic perspective view illustrating a configuration of a cutting device used in the method for manufacturing a semiconductor substrate according to the present embodiment. FIG. 3 is a schematic cross-sectional view showing the configuration of a wire used in the method for manufacturing a semiconductor substrate according to this embodiment. FIG. 4 is a first flowchart showing a method for manufacturing a semiconductor substrate according to the present embodiment. FIG. 5 is a second flowchart showing the method for manufacturing the semiconductor substrate according to the present embodiment. FIG. 6 is a diagram for explaining the reciprocal travel of the wire. FIG. 7 is a diagram for explaining a method of measuring the outer diameter of the wire. FIG. 8 is a diagram for explaining a method of calculating the outer diameter of the wire. FIG. 9 is a diagram illustrating an example of a method for adjusting the new wire supply amount.

[Outline of Embodiment of the Present Disclosure]
First, an overview of an embodiment of the present disclosure will be described. In the crystallographic description in this specification, the individual orientation is indicated by [], the collective orientation is indicated by <>, the individual plane is indicated by () and the collective plane is indicated by {}. As for the negative index, “−” (bar) is attached on the number in crystallography, but in this specification, a negative sign is attached before the number.

(1) A semiconductor substrate manufacturing method according to the present disclosure includes the following steps. The semiconductor is sliced by using the wire while measuring the outer diameter of the wire in which the diamond abrasive grains are fixed to the core wire. Based on the measured outer diameter, the semiconductor slicing conditions are adjusted.

When the semiconductor ingot is sliced using a wire in which diamond abrasive grains are fixed to a core wire, the outer diameter of the wire decreases due to wear of the diamond abrasive grains. When the outer diameter of the wire changes, the cutting margin of the semiconductor ingot changes. Therefore, the change in the outer diameter of the wire affects the processing quality such as the thickness distribution of the semiconductor substrate cut out from the semiconductor ingot.

The inventors measured the outer diameter of the wire after slicing the semiconductor ingot and found that the outer diameter of the wire became smaller as the slicing progressed. In addition, as a result of investigating the distribution of the thickness of the semiconductor substrate cut out from the semiconductor ingot, the inventors have found that the thickness of the semiconductor substrate increases as the slicing progresses. That is, it is considered that the thickness of the semiconductor substrate is increased by reducing the outer diameter of the wire. Based on the above findings, the inventors conceived of measuring the outer diameter of the wire in real time while slicing the semiconductor ingot and adjusting the slicing conditions based on the measured outer diameter. Thereby, since the semiconductor ingot is sliced under the slicing condition corresponding to the outer diameter of the wire, the processing quality of the semiconductor substrate can be improved.

(2) In the semiconductor substrate manufacturing method according to the above (1), in the step of slicing the semiconductor, the step of slicing the semiconductor by sending the wire in the forward direction and the step of slicing the semiconductor by sending the wire in the backward direction And the step of performing may be repeated alternately. The slicing condition may be a new wire supply amount obtained by subtracting an amount of feeding the wire in the backward direction from an amount of feeding the wire in the forward direction. Thereby, TTV (Total Thickness Variation) of the semiconductor substrate can be reduced while reducing the amount of wire used.

[Details of Embodiment of the Present Disclosure]
Hereinafter, details of an embodiment of the present disclosure (hereinafter also referred to as the present embodiment) will be described based on the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

First, the configuration of a silicon carbide substrate manufactured by the method for manufacturing a semiconductor substrate according to the present embodiment will be described.

As shown in FIG. 1, a semiconductor substrate 10 manufactured by the method for manufacturing a semiconductor substrate according to this embodiment includes a first main surface 11, a second main surface 13 opposite to the first main surface 11, It mainly has a peripheral edge 30. Semiconductor substrate 10 is made of, for example, a silicon carbide single crystal. The first main surface 11 is a surface in which, for example, the {0001} plane or the {0001} plane is inclined in the off direction. The first main surface 11 is a surface in which, for example, the (0001) plane or the (0001) plane is inclined by more than 0 ° and not more than 8 °. The inclination direction (off direction) of the first main surface 11 is, for example, the <11-20> direction. The off direction may be, for example, a <1-100> direction, or a direction including a <11-20> direction component and a <1-100> direction component. The inclination angle (off angle) from the (0001) plane may be 1 ° or more, or 2 ° or more. The off angle may be 7 ° or less, or 6 ° or less.

The peripheral portion 30 includes, for example, a first orientation flat 31 (hereinafter also referred to as a first flat), a second orientation flat 32 (hereinafter also referred to as a second flat), and a curved surface portion 33. The first flat 31 extends, for example, along the <11-20> direction. The first flat 31 is, for example, a (1-100) plane. The second flat 32 extends, for example, along the <1-100> direction. The second flat 32 is, for example, the (11-20) plane.

The polytype of the silicon carbide single crystal is, for example, 4H—SiC. 4H—SiC is superior to other polytypes in terms of electron mobility, dielectric breakdown field strength, and the like. Silicon carbide substrate 10 includes an n-type impurity such as nitrogen, for example. The diameter of the first major surface 11 is 100 mm or more. The diameter may be 150 mm or more, 200 mm or more, or 250 mm or more. The upper limit of the diameter is not particularly limited. The upper limit of the diameter may be 300 mm, for example.

In the above description, the case where the semiconductor substrate is made of silicon carbide has been described. However, the semiconductor substrate is not limited to the case made of silicon carbide. The semiconductor substrate may be made of, for example, gallium nitride (GaN), silicon (Si), sapphire, gallium arsenide (GaAs), indium phosphide (InP), or the like.

Next, the configuration of a cutting device used in the method for manufacturing a semiconductor substrate according to this embodiment will be described.

As shown in FIG. 2, the cutting device 5 includes a first guide roller 52, a second guide roller 55, a wire 2, a first nozzle 54, a second nozzle 56, a wire supply unit 3, and a wire. It mainly has a recovery unit 4 and an outer diameter measuring device 40. The semiconductor ingot 1 is disposed between the first guide roller 52 and the second guide roller 55. The first guide roller 52 and the second guide roller 55 are made of resin, for example. A V-shaped wire guide groove 53 is provided on the outer peripheral surface of each of the first guide roller 52 and the second guide roller 55. The thickness of the semiconductor substrate 10 can be adjusted by adjusting the distance between the wire guide grooves 53.

The wire supply unit 3 supplies the wire 2 toward the first guide roller 52. The wire collection unit 4 collects the wire 2 from the second guide roller 55. The wire 2 is supplied from the wire supply unit 3 and is recovered by the wire recovery unit 4 after cutting the semiconductor ingot 1. The outer diameter measuring instrument 40 is disposed, for example, between the second guide roller 55 and the wire recovery unit 4. The outer diameter measuring device 40 includes a light projecting unit 41 and a light receiving unit 42. The light projecting unit 41 is disposed on the opposite side of the light receiving unit 42 with respect to the wire 2. In other words, the wire 2 is disposed between the light projecting unit 41 and the light receiving unit 42. A cover glass (not shown) is provided on the light projecting unit 41 and the light receiving unit 42 in order to prevent the cutting fluid or chips adhering to the wire 2 from being scattered during the slicing and adhering to the light emitting device and the light receiving device. May be provided. The installation place of the outer diameter measuring device 40 is not particularly limited, but the outer diameter measuring device 40 is preferably installed in a place where the scattering of the cutting fluid is small.

The wire 2 is wound around each of the first guide roller 52 and the second guide roller 55 along the wire guide groove 53. For example, the first nozzle 54 is provided between the semiconductor ingot 1 and the first guide roller 52. Similarly, the second nozzle 56 is provided between the semiconductor ingot 1 and the second guide roller 55, for example.

Tension is applied to the wire 2. The tension | tensile_strength of the wire 2 is 70% or less of the breaking tension of the wire 2, for example, Preferably it is 60% or less, More preferably, it is 50% or less. When the tension of the wire 2 is large, the wire 2 may be broken. On the other hand, when tension of wire 2 is small, wire 2 bends and warpage of silicon carbide substrate 10 cut out from semiconductor ingot 1 increases. The breaking tension of the wire can be measured, for example, according to the method described in JIS Z2241 of Japanese Industrial Standard.

As shown in FIG. 3, the wire 2 includes a core wire 21, diamond abrasive grains 22, and a fixing layer 23. The fixing layer 23 is, for example, a nickel (Ni) plating layer. The fixing layer 23 may be a resin. The plurality of diamond abrasive grains 22 are fixed to the outer peripheral surface of the core wire 21 through, for example, a fixing layer 23. The core wire 21 is obtained by, for example, brass-plating a piano wire made of carbon steel or the like. The wire 2 is, for example, a fixed abrasive wire in which diamond abrasive grains 22 are fixed to the core wire 21.

The outer diameter W of the wire 2 is, for example, 250 μm or less, preferably 120 μm or less, and more preferably 80 μm or less. Although the minimum of the outer diameter W of the wire 2 is not specifically limited, The outer diameter W of the wire 2 is 70 micrometers or more, for example. The number of wires depends on the thickness of the semiconductor ingot to be sliced, but is, for example, 20 or more and 30 or less. The average particle diameter of the diamond abrasive grains 22 is, for example, 50 μm or less, preferably 15 μm or less, and more preferably 10 μm or less. Although the minimum of the average particle diameter of the diamond abrasive grain 22 is not specifically limited, For example, it is 4 micrometers or more.

Next, a method for manufacturing a semiconductor substrate according to the present embodiment will be described.
First, a semiconductor ingot preparation process is performed. For example, silicon carbide ingot 1 is manufactured by a sublimation method. For example, a seed crystal composed of single crystal silicon carbide and a silicon carbide raw material composed of solid polycrystalline silicon carbide powder are placed in a container composed of graphite. A silicon carbide ingot grows on the seed crystal by sublimation of the silicon carbide raw material and sublimation on the seed crystal. For example, nitrogen serving as a donor is introduced while the silicon carbide ingot is growing. As a result, the silicon carbide ingot contains nitrogen. The silicon carbide ingot is made of, for example, a silicon carbide single crystal having a polytype of 4H. Next, by shaping the silicon carbide ingot 1, the silicon carbide ingot 1 is formed into a substantially cylindrical shape. Next, for example, graphite base 60 (see FIG. 2) is fixed to silicon carbide ingot 1.

Next, a step of slicing the semiconductor while measuring the outer diameter of the wire (S1: FIG. 4) and a step of adjusting the semiconductor slicing conditions based on the measured outer diameter (S2: FIG. 4) are performed. The First, a target wire outer diameter is set (S10: FIG. 5). Specifically, a value smaller than the outer diameter of the wire before slicing the semiconductor is set as the target wire outer diameter. The target wire outer diameter is preferably 5 μm or less than the outer diameter of the wire before the start of slicing. For example, when the average value of the wire outer diameter before the start of slicing is 240 μm, the target wire outer diameter can be set to 235 μm.

Next, semiconductor slicing is started (S11: FIG. 5). Specifically, silicon carbide ingot 1 approaches wire 2 in a state where wire 2 reciprocates in the longitudinal direction 50 of wire 2. When silicon carbide ingot 1 comes into contact with wire 2, cutting of silicon carbide ingot 1 is started. That is, silicon carbide ingot 1 is cut by wire 2 (see FIG. 2).

As shown in FIG. 2, the first guide roller 52 and the second guide roller 55 alternately repeat forward rotation and reverse rotation along the direction of the arrow 51. As a result, the wire 2 reciprocates along the longitudinal direction 50 of the wire 2. The silicon carbide ingot 1 is cut by contacting the silicon carbide ingot 1 while the wire 2 reciprocates. The maximum linear velocity of the wire 2 is, for example, 1000 m / min or more, preferably 1500 m / min or more, and more preferably 2000 m / min or more.

In the step of slicing the semiconductor (S1: FIG. 4), the step of slicing the semiconductor by sending the wire in the forward direction and the step of slicing the semiconductor by sending the wire in the backward direction are alternately repeated. As shown in FIG. 2, the forward direction is a direction in which the wire moves from the wire supply unit 3 toward the wire recovery unit 4. In other words, the forward direction is a direction in which the wire moves so that the number of turns of the wire of the wire supply unit 3 decreases and the number of turns of the wire of the wire recovery unit 4 increases. In addition, the advance direction of the wire is a direction in which the wire advances substantially. On the contrary, the backward direction is a direction in which the wire moves from the wire recovery unit 4 toward the wire supply unit 3. In other words, the backward direction is a direction in which the wire moves so that the number of turns of the wire of the wire supply unit 3 increases and the number of turns of the wire of the wire recovery unit 4 decreases. Note that the backward direction of the wire is the direction opposite to the forward direction. As shown in FIG. 6, for example, X (m) is sent out from the wire supply unit 3 toward the wire recovery unit 4. Next, the wire is rewound Y (m) from the wire recovery unit 4 toward the wire supply unit 3. The wire 2 is sent out from the time T0 to the time T3. From time T3 to time T6, the wire 2 is rewound. Between the time point T0 and the time point T1, the linear velocity in the delivery direction of the wire 2 increases. From the time point T1 to the time point T2, the linear velocity in the delivery direction of the wire 2 is substantially constant. The linear velocity in the delivery direction of the wire 2 is, for example, 1500 m / min. Between the time T2 and the time T3, the linear velocity in the delivery direction of the wire 2 decreases. At the time T3, the linear velocity of the wire 2 becomes zero.

Similarly, the wire speed in the unwinding direction of the wire 2 increases from time T3 to time T4. From time T4 to time T5, the linear velocity of the wire 2 in the unwinding direction is substantially constant. The linear velocity in the unwinding direction of the wire 2 is, for example, 1500 m / min. Between the time T5 and the time T6, the linear velocity in the unwinding direction of the wire 2 decreases. As described above, feeding and rewinding are repeated a plurality of times as one cycle.

Usually, the feed amount X of the wire 2 is set larger than the unwinding amount Y of the wire 2. Therefore, the wire moves in the forward direction by (XY) (m) substantially during one cycle. The substantial wire travel (XY) (m) is called the new wire feed. In other words, the new wire supply amount is obtained by subtracting the amount of feeding the wire 2 in the backward direction from the amount of feeding the wire 2 in the forward direction. In this way, the wire 2 is gradually fed in the forward direction while repeating the forward and backward movements.

While the wire 2 slices the silicon carbide ingot 1, the wire 2 and the silicon carbide ingot 1 swing so that the wire 2 makes point contact with the silicon carbide ingot 1. While the wire 2 is cutting the silicon carbide ingot 1, the grinding fluid is sprayed from the first nozzle 54 and the second nozzle 56 to the contact portion between the wire 2 and the silicon carbide ingot 1. For example, a water-soluble grinding fluid is used as the grinding fluid.

7, while the wire 2 is slicing the silicon carbide ingot 1, the outer diameter of the wire is measured (S12: FIG. 5). For the measurement of the outer diameter of the wire, for example, an ultra-high speed and high precision dimension measuring instrument LS-9006MR manufactured by Keyence Corporation is used. Specifically, for example, green LED light 43 is projected from the light projecting unit 41 onto the wire 2 that is traveling reciprocally, and the LED light 43 is received by the light receiving unit 42. The diameter of the LED light 43 projected from the light projecting unit 41 (in other words, the width of the LED light in a plane perpendicular to the traveling direction of the LED light) is larger than the outer diameter of the wire 2. Therefore, the LED light 43 blocked by the wire 2 does not reach the light receiving unit 42. On the contrary, the LED light 43 not blocked by the wire 2 reaches the light receiving unit 42. Thereby, the outer shape (shadow) of the wire 2 is observed by the light receiving unit 42.

FIG. 8 is an image of the shadow of the wire 2 obtained by the light receiving unit 42. By measuring the size of the shadow in the direction perpendicular to the longitudinal direction of the wire 2, the outer diameter W of the wire 2 can be obtained. The dimension L in the horizontal direction of the measured image (in other words, the reciprocating direction of the wire 2) is, for example, about 1 mm to 2 mm. The measurement of the outer diameter of the wire is performed, for example, every second. In order to improve the measurement accuracy of the outer diameter of the wire, the outer diameter of the wire may be measured by projecting LED light on the wire from different directions and observing shadows in different directions.

The cutting fluid or chips adhering to the wire 2 during slicing are scattered and adhered to the light emitting element of the light projecting unit 41 and the light receiving element of the light receiving unit 42, thereby preventing the measurement accuracy of the outer diameter of the wire 2 from deteriorating. Therefore, an air purge may be performed on the wire 2. The air purge for the wire 2 is performed before measuring the outer diameter of the wire 2. Thereby, the cutting fluid adhering to the wire 2 can be removed. Therefore, the outer diameter of the wire 2 can be measured with high accuracy. Note that the measurement of the outer diameter of the wire may be any method that does not contact the wire, and is not limited to an optical method using an LED or a laser. The outer diameter of the wire may be measured by an electrical method using, for example, capacitance or eddy current.

Next, the average value of the outer diameters of the wires is calculated (S13: FIG. 5). The period (cycle) of sending and unwinding the wire 2 is, for example, about 120 seconds. When the measurement period of the outer diameter of the wire is 1 second, the outer diameter of the wire 2 is measured 120 times during one cycle. For example, the average value of the 120 outer diameters of the wire is calculated. The calculation method of the average value of the outer diameter of the wire is not limited to the above method. For example, an average value of the outer diameter of a part of a wire during one cycle (for example, only during feeding or only during unwinding) may be calculated, or an average value of the outer diameter of the wire during a plurality of cycles May be calculated.

Next, it is determined whether or not the average value of the outer diameter of the wire is larger than the set value (S14: FIG. 5). Specifically, the average value of the outer diameter of the wire in one cycle of the reciprocating traveling of the wire 2 is compared with the value (set value) of the target wire outer diameter set in step S10. When the average value of the outer diameter of the wire is larger than the set value, it is considered that the wear of the wire is small. Therefore, the new wire supply amount is reduced (S15: FIG. 5). On the other hand, when the average value of the outer diameters of the wires is smaller than the set value, it is considered that the wear of the wires is progressing. Therefore, the new wire supply amount is increased (S16: FIG. 5). As described above, based on the measured outer diameter of the wire 2, the new wire supply amount which is one of the slice conditions of the semiconductor ingot 1 is adjusted. Specifically, the new wire supply amount is adjusted so that a change with time in the outer diameter of the wire is minimized. Thereby, a semiconductor substrate with a small TTV can be obtained while reducing the amount of wire used.

Next, an example of a method for adjusting the new wire supply amount will be described.
As shown in FIG. 9, the wire feed amount and the wire rewind amount in the Nth cycle are X _n and Y _n , respectively. In this case, the new wire supply amount is X _n −Y _n . The average value of the outer diameter of the wire was measured in the slice of the N-th cycle is Z _n. When Z ₁ is the average value of the outer diameter of the wire in the first cycle is smaller than the set value, in the next cycle, the supply amount of the new wire is increased. For example, while maintaining rewind amount of the wire in the second cycle Y ₂ and the rewinding amount Y ₁ of the wire at the first cycle at the same value, the transmission amount X ₂ of the wire in the second cycle, the first increases than transmission amount X ₁ of the wire at the cycle. This increases the new wire supply. Alternatively, while maintaining delivery rate of the wire in the second cycle X ₂ and the transmission amount X ₁ of the wire at the first cycle at the same value, the rewinding amount Y ₂ wires in the second cycle, it may be reduced from the rewinding amount Y ₁ of the wire at the first cycle. Alternatively, the wire feed rate in the second cycle is such that the new wire feed rate X ₂ -Y ₂ in the second cycle is greater than the new wire feed rate X ₁ -Y ₁ in the first cycle. Both X ₂ and the rewind amount Y ₂ may be changed so as to be different from the wire feed amount X ₁ and the rewind amount Y ₁ in the first cycle.

Conversely, when Z ₁ is an average value of the outer diameter of the wire in the first cycle is greater than the set value, in the next cycle, the supply amount of the new wire is reduced. For example, while maintaining rewind amount of the wire in the second cycle Y ₂ and the rewinding amount Y ₁ of the wire at the first cycle at the same value, the transmission amount X ₂ of the wire in the second cycle, the first reducing than transmission amount X ₁ of the wire at the cycle. This reduces the new wire supply. Alternatively, while maintaining delivery rate of the wire in the second cycle X ₂ and the transmission amount X ₁ of the wire at the first cycle at the same value, the rewinding amount Y ₂ wires in the second cycle, it may be increased from the rewinding amount Y ₁ of the wire at the first cycle. Alternatively, the wire feed rate in the second cycle is such that the new wire feed rate X ₂ -Y ₂ in the second cycle is smaller than the new wire feed rate X ₁ -Y ₁ in the first cycle. Both X ₂ and the rewind amount Y ₂ may be changed so as to be different from the wire feed amount X ₁ and the rewind amount Y ₁ in the first cycle. In addition, when the average value of the outer diameter of the wire in a certain cycle is the same as the set value, the supply amount of the new wire may not change in the next cycle.

Next, the surface of each of the plurality of silicon carbide substrates obtained by slicing the ingot is mechanically polished using, for example, diamond abrasive grains. Next, chemical mechanical polishing is performed on the surface of the silicon carbide substrate using, for example, colloidal silica. Thereby, silicon carbide substrate 10 is obtained (see FIG. 1).

As described above, the semiconductor ingot 1 is sliced using the wire 2 while measuring the outer diameter of the wire 2. Based on the measured outer diameter of the wire 2, the slice condition of the semiconductor ingot 1 is adjusted. In the above description, the case where the slice condition is the new wire supply amount has been described. However, the slice condition is not limited to the new wire supply amount. The slicing condition may be, for example, the linear speed of the wire 2, the tension of the wire 2, the swing angle of the wire 2, or the swing speed of the wire 2. Alternatively, the feed rate of the semiconductor ingot may be used.

In addition, in the above, although the case where the semiconductor ingot was comprised from silicon carbide was demonstrated, it is not limited to the case where a semiconductor ingot is comprised from silicon carbide. The semiconductor ingot may be made of, for example, gallium nitride (GaN), silicon (Si), sapphire, gallium arsenide (GaAs), indium phosphide (InP), or the like.

It should be considered that the embodiment disclosed this time is illustrative in all respects and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 semiconductor ingot (silicon carbide ingot), 2 wires, 3 wire supply unit, 4 wire recovery unit, 5 cutting device, 10 semiconductor substrate (silicon carbide substrate), 11 first main surface, 13 second main surface, 21 core wire, 22 diamond abrasive grains, 23 fixed layer, 30 peripheral portion, 31 first orientation flat (first flat), 32 second orientation flat (second flat), 33 curved surface portion, 40 outer diameter measuring device, 41 light projecting portion, 42 light-receiving part, 43 LED light, 50 longitudinal direction, 52 1st guide roller, 53 wire guide groove, 54 1st nozzle, 55 2nd guide roller, 56 2nd nozzle, 60 base part.

Claims

Slicing the semiconductor with the wire while measuring the outer diameter of the wire with diamond abrasive grains fixed to the core; and
Adjusting the slice condition of the semiconductor based on the measured outer diameter.
In the step of slicing the semiconductor, the step of slicing the semiconductor by sending the wire in the forward direction and the step of slicing the semiconductor by sending the wire in the backward direction are alternately repeated,
2. The method of manufacturing a semiconductor substrate according to claim 1, wherein the slicing condition is a new wire supply amount obtained by subtracting an amount of feeding the wire in the backward direction from an amount of feeding the wire in the forward direction.