TWI822197B - Circuit board structure and manufacturing method thereof - Google Patents

Circuit board structure and manufacturing method thereof Download PDF

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TWI822197B
TWI822197B TW111127643A TW111127643A TWI822197B TW I822197 B TWI822197 B TW I822197B TW 111127643 A TW111127643 A TW 111127643A TW 111127643 A TW111127643 A TW 111127643A TW I822197 B TWI822197 B TW I822197B
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layer
circuit
circuit layer
substrate
patterned
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TW111127643A
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TW202332349A (en
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范光慶
謝智鵬
王正雄
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欣興電子股份有限公司
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Abstract

A circuit board structure includes a circuit substrate, a first circuit layer and a second circuit layer. The circuit substrate has a surface and includes at least one conductive structure and at least one patterned circuit layer. The conductive structure is electrically connected to the patterned circuit layer, and an upper surface of the conductive structure is aligned with the surface. The first circuit layer is directly disposed on the surface of the circuit substrate, and is electrically connected with the conductive structure. A line width of the first circuit layer is less than or equal to 1/4 of a line width of the patterned circuit layer. The second circuit layer is directly disposed on the first circuit layer and electrically connected to the first circuit layer.

Description

電路板結構及其製作方法Circuit board structure and manufacturing method

本發明是有關於一種基板結構及其製作方法,且特別是有關於一種電路板結構及其製作方法。 The present invention relates to a substrate structure and a manufacturing method thereof, and in particular, to a circuit board structure and a manufacturing method thereof.

高密度連接板(high-density interconnect,HDI)具有體積小、速度快、頻率高的優勢,是個人電腦、可攜式電腦、手機及個人數位助理的主要零組件。一般來說,薄膜重分佈層(thin-film redistribution layers)與高密度連接板的接合需要先形成轉接層,才會形成具有細線寬的線路層。因為需要轉接層,因而增加了製程複雜度,且於訊號傳遞上增加了傳輸路徑,進而降低訊號完整性。再者,高密度連接板的最上層多以減層法(Subtractive)來製作,而轉接層的線路製程極限為線寬/銅厚的比值是1/1.25。在現今追求細線寬的市場趨勢,當所需線寬限制為10微米時,其銅厚僅能12.5微米,在使用在探針卡測試端的多層有機載板(Multi-Layer Organic,MLO),則因其線路截面積過小,電阻過大,而有線路融斷的風險。此外,若採用以銲錫及填充膠體所形 成的連接層來連接重分佈層(RLD)與高密度連接板,則會產生接合後共面性不佳的問題。 High-density interconnect (HDI) has the advantages of small size, fast speed and high frequency. It is a major component of personal computers, portable computers, mobile phones and personal digital assistants. Generally speaking, the connection between thin-film redistribution layers and high-density connection boards requires the formation of a transfer layer before forming a circuit layer with fine line width. Because a transfer layer is required, the process complexity is increased, and a transmission path is added to the signal transmission, thereby reducing signal integrity. Furthermore, the uppermost layer of high-density connection boards is mostly produced using the subtractive method, and the circuit process limit of the transfer layer is that the ratio of line width/copper thickness is 1/1.25. In today's market trend of pursuing thin line width, when the required line width is limited to 10 microns, the copper thickness can only be 12.5 microns. When using the multi-layer organic (MLO) board at the test end of the probe card, the Because the cross-sectional area of the circuit is too small and the resistance is too large, there is a risk of circuit fusion. In addition, if it is formed by soldering and filling colloid If a connection layer is formed to connect the redistribution layer (RLD) and the high-density connection board, there will be a problem of poor coplanarity after joining.

本發明提供一種電路板結構,其可縮短訊號傳輸路徑,可具有較佳的訊號完整性。 The present invention provides a circuit board structure that can shorten the signal transmission path and have better signal integrity.

本發明提供一種電路板結構的製作方法,用以製作上述的電路板結構。 The present invention provides a method for manufacturing a circuit board structure, which is used to manufacture the above-mentioned circuit board structure.

本發明的電路板結構,包括一電路基板、一第一線路層以及一第二線路層。電路基板具有一表面且包括至少一導電結構與至少一圖案化線路層。導電結構與圖案化線路層電性連接,且導電結構的一上表面切齊於表面。第一線路層直接配置於電路基板的表面上,且與導電結構電性連接。第一線路層的線寬小於或等於圖案化線路層的線寬的1/4。第二線路層直接配置於第一線路層上且與第一線路層電性連接。 The circuit board structure of the present invention includes a circuit substrate, a first circuit layer and a second circuit layer. The circuit substrate has a surface and includes at least one conductive structure and at least one patterned circuit layer. The conductive structure is electrically connected to the patterned circuit layer, and an upper surface of the conductive structure is flush with the surface. The first circuit layer is directly disposed on the surface of the circuit substrate and is electrically connected to the conductive structure. The line width of the first circuit layer is less than or equal to 1/4 of the line width of the patterned circuit layer. The second circuit layer is directly disposed on the first circuit layer and is electrically connected to the first circuit layer.

在本發明的一實施例中,上述的電路基板包括一高密度互連基板。 In an embodiment of the present invention, the above-mentioned circuit substrate includes a high-density interconnection substrate.

在本發明的一實施例中,上述的第一線路層包括至少一線路。線路的線寬/厚度的比值大於等於1/2.5。 In an embodiment of the present invention, the above-mentioned first circuit layer includes at least one circuit. The line width/thickness ratio of the line is greater than or equal to 1/2.5.

在本發明的一實施例中,上述的線路的線寬與線距分別為小於等於10微米。 In an embodiment of the present invention, the line width and line spacing of the above-mentioned lines are respectively less than or equal to 10 microns.

在本發明的一實施例中,上述的第一線路層包括至少一 接墊。接墊的直徑小於等於導電結構的直徑的1/5。 In an embodiment of the present invention, the above-mentioned first circuit layer includes at least one Pad. The diameter of the pad is less than or equal to 1/5 of the diameter of the conductive structure.

本發明的電路板結構的製作方法,其包括以下步驟。提供一電路基板。電路基板具有一表面且包括至少一導電結構與至少一圖案化線路層。導電結構與圖案化線路層電性連接,且導電結構的一上表面切齊於表面。形成一第一線路層於電路基板的表面上。第一線路層直接接觸表面且與導電結構電性連接。第一線路層的線寬小於或等於圖案化線路層的線寬的1/4。形成一第二線路層於第一線路層上,其中第二線路層直接接觸第一線路層且與第一線路層電性連接。 The manufacturing method of the circuit board structure of the present invention includes the following steps. A circuit substrate is provided. The circuit substrate has a surface and includes at least one conductive structure and at least one patterned circuit layer. The conductive structure is electrically connected to the patterned circuit layer, and an upper surface of the conductive structure is flush with the surface. Form a first circuit layer on the surface of the circuit substrate. The first circuit layer directly contacts the surface and is electrically connected to the conductive structure. The line width of the first circuit layer is less than or equal to 1/4 of the line width of the patterned circuit layer. A second circuit layer is formed on the first circuit layer, wherein the second circuit layer directly contacts the first circuit layer and is electrically connected to the first circuit layer.

在本發明的一實施例中,上述形成第一線路層於電路基板的表面上的步驟包括:形成一種子層於電路基板的表面上。形成一圖案化光阻層於種子層上。以圖案化光阻層為電鍍罩幕,以電鍍一導電材料於種子層上。移除圖案化光阻層及其下之部分種子層,而形成第一線路層。 In an embodiment of the present invention, the step of forming the first circuit layer on the surface of the circuit substrate includes: forming a sub-layer on the surface of the circuit substrate. Form a patterned photoresist layer on the seed layer. The patterned photoresist layer is used as an electroplating mask, and a conductive material is electroplated on the seed layer. The patterned photoresist layer and part of the seed layer underneath are removed to form a first circuit layer.

在本發明的一實施例中,上述提供電路基板時,一銅箔層覆蓋在表面與導電結構上,形成第一線路層於電路基板的表面上的步驟包括:形成一圖案化光阻層於銅箔層上。蝕刻暴露於圖案化光阻層外的銅箔層,而暴露出電路基板的部分表面。移除圖案化光阻層,而形成第一線路層於電路基板的表面上。 In an embodiment of the present invention, when the circuit substrate is provided, a copper foil layer covers the surface and the conductive structure. The step of forming the first circuit layer on the surface of the circuit substrate includes: forming a patterned photoresist layer on the surface of the circuit substrate. on the copper foil layer. The etching exposes the copper foil layer outside the patterned photoresist layer, thereby exposing part of the surface of the circuit substrate. The patterned photoresist layer is removed to form a first circuit layer on the surface of the circuit substrate.

在本發明的一實施例中,上述提供電路基板時,一銅箔層覆蓋在表面與導電結構上,形成第一線路層於電路基板的表面上的步驟包括對銅箔層進行一雷射程序,而形成第一線路層於電 路基板的表面上。 In one embodiment of the present invention, when the circuit substrate is provided, a copper foil layer covers the surface and the conductive structure. The step of forming the first circuit layer on the surface of the circuit substrate includes performing a laser process on the copper foil layer. , and the first circuit layer is formed on the electrical on the surface of the road base plate.

在本發明的一實施例中,上述的電路基板包括一高密度互連基板。 In an embodiment of the present invention, the above-mentioned circuit substrate includes a high-density interconnection substrate.

基於上述,在本發明的電路板結構的設計中,第一線路層是直接配置於電路基板的表面上,且與電路基板的導電結構電性連接,其中第一線路層的線寬小於或等於電路基板的圖案化線路層的線寬的1/4。也就是說,本發明的電路板結構無須設置現有技術中的轉接層,而是可以直接在電路基板上形成細線寬的第一線路層,可有效地縮短訊號傳輸路徑,而具有較佳的訊號完整性。 Based on the above, in the design of the circuit board structure of the present invention, the first circuit layer is directly disposed on the surface of the circuit substrate and is electrically connected to the conductive structure of the circuit substrate, wherein the line width of the first circuit layer is less than or equal to 1/4 of the line width of the patterned circuit layer of the circuit substrate. That is to say, the circuit board structure of the present invention does not need to provide a transfer layer in the prior art, but can directly form a first circuit layer with a thin line width on the circuit substrate, which can effectively shorten the signal transmission path and has better Signal integrity.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

100a、100b:電路板結構 100a, 100b: Circuit board structure

110、110’:電路基板 110, 110’: circuit substrate

111:核心層 111:Core layer

112:導電通孔 112:Conductive via

113:圖案化線路層 113: Patterned circuit layer

114、115:導電結構 114, 115: Conductive structure

115a:上表面 115a: Upper surface

116:介電層 116:Dielectric layer

117:防銲層 117: Solder mask

118:第一金屬層 118: First metal layer

119:第二金屬層 119: Second metal layer

120a、120b:第一線路層 120a, 120b: first line layer

122、142、162、S1、S2、S3:種子層 122, 142, 162, S1, S2, S3: seed layer

124:線路 124:Line

125:接墊 125:pad

130、150:絕緣層 130, 150: Insulating layer

131、151:表面 131, 151: Surface

140:第二線路層 140: Second line layer

144、164:導電圖案 144, 164: Conductive pattern

145:第三線路層 145: The third line layer

160:第四線路層 160: The fourth line layer

C1、C2、C3:導電材料 C1, C2, C3: conductive materials

D1、D2:直徑 D1, D2: diameter

L:雷射光 L:Laser light

L1、L2:線寬 L1, L2: line width

M、M’:銅箔層 M, M’: Copper foil layer

O1、O2、O3:開口 O1, O2, O3: opening

P:光阻層 P: Photoresist layer

P1、P2、P3、P4:圖案化光阻層 P1, P2, P3, P4: patterned photoresist layer

T:表面 T: Surface

圖1A是依照本發明的一實施例的一種電路板結構的剖面示意圖。 1A is a schematic cross-sectional view of a circuit board structure according to an embodiment of the present invention.

圖1B是圖1A的電路板結構的電路基板的圖案化線路層與第一線路層的線路的局部俯視示意圖。 FIG. 1B is a partial top view of the patterned circuit layer and the circuits of the first circuit layer of the circuit board structure of FIG. 1A .

圖1C是圖1A的電路板結構的電路基板的導電結構與第一線路層的接墊的局部俯視示意圖。 FIG. 1C is a partial top view of the conductive structure of the circuit substrate and the pads of the first circuit layer of the circuit board structure of FIG. 1A .

圖2A至圖2Q為圖1的電路板結構的製作方法的剖面示意圖。 FIGS. 2A to 2Q are schematic cross-sectional views of the manufacturing method of the circuit board structure of FIG. 1 .

圖3是依照本發明的另一實施例的一種電路板結構的剖面示意圖。 FIG. 3 is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention.

圖4A至圖4D為圖3的電路板結構的一種製作方法的局部剖面示意圖。 4A to 4D are partial cross-sectional schematic diagrams of a manufacturing method of the circuit board structure of FIG. 3 .

圖5為圖3的電路板結構的另一種製作方法的局部剖面示意圖。 FIG. 5 is a partial cross-sectional schematic diagram of another manufacturing method of the circuit board structure of FIG. 3 .

圖1A是依照本發明的一實施例的一種電路板結構的剖面示意圖。圖1B是圖1A的電路板結構的電路基板的圖案化線路層與第一線路層的線路的局部俯視示意圖。圖1C是圖1A的電路板結構的電路基板的導電結構與第一線路層的接墊的局部俯視示意圖。 1A is a schematic cross-sectional view of a circuit board structure according to an embodiment of the present invention. FIG. 1B is a partial top view of the patterned circuit layer and the circuits of the first circuit layer of the circuit board structure of FIG. 1A . FIG. 1C is a partial top view of the conductive structure of the circuit substrate and the pads of the first circuit layer of the circuit board structure of FIG. 1A .

請先參考圖1A,在本實施例中,電路板結構100a包括一電路基板110、一第一線路層120a以及一第二線路層140。電路基板110具有一表面T且包括至少一導電結構115(示意地繪示多個)與至少一圖案化線路層113(示意地繪示多個)。導電結構115與圖案化線路層113電性連接,且導電結構115的一上表面115a切齊於電路基板110的表面T。第一線路層120a直接配置於電路基板110的表面T上,且與導電結構115電性連接。第一線路層120a的線寬小於或等於圖案化線路層113的線寬的1/4。第二線路層140直接配置於第一線路層120a上且與第一線路層120a 電性連接。 Please refer to FIG. 1A first. In this embodiment, the circuit board structure 100a includes a circuit substrate 110, a first circuit layer 120a and a second circuit layer 140. The circuit substrate 110 has a surface T and includes at least one conductive structure 115 (a plurality is schematically shown) and at least one patterned circuit layer 113 (a plurality is schematically shown). The conductive structure 115 is electrically connected to the patterned circuit layer 113, and an upper surface 115a of the conductive structure 115 is flush with the surface T of the circuit substrate 110. The first circuit layer 120a is directly disposed on the surface T of the circuit substrate 110 and is electrically connected to the conductive structure 115. The line width of the first circuit layer 120a is less than or equal to 1/4 of the line width of the patterned circuit layer 113. The second circuit layer 140 is directly disposed on the first circuit layer 120a and connected with the first circuit layer 120a. Electrical connection.

在本實施例中,電路基板110例如是一高密度互連基板。詳細來說,電路基板110包括核心層111、貫穿核心層111且彼此分離的多個導電通孔112、連接導電通孔112的相對兩端且與多層介電層116交替排列的圖案化線路層113以及連接相鄰兩圖案化線路層的導電結構114。圖案化線路層113、介電層116以及導電結構114可定義出增層線路結構,分別位於核心層111的相對兩側上。也就是說,電路基板110為高密度的雙面線路板。核心層111的一側包括導電結構115,其中導電結構115與圖案化線路層113電性連接,且導電結構115的表面115a切齊於電路基板110的表面T。此處,電路基板110的表面T與導電結構115的表面115a可定義出連接面,用以與第一線路層120a結構性且電性連接。核心層111的另一側還包括防銲層117以及表面處理層,其中防銲層117覆蓋在介電層116的表面上且暴露出圖案化線路層113,而表面處理層配置在被防銲層117所暴露出的圖案化線路層113上。此處,表面處理層包括第一金屬層118與配置於第一金屬層118上的第二金屬層119,其中第一金屬層118的材質與第二金屬層119的材質例如是鎳層、金層、銀層、鎳鈀金層或其他適當的金屬或合金,可保護圖案化線路層113以避免產生氧化。 In this embodiment, the circuit substrate 110 is, for example, a high-density interconnection substrate. In detail, the circuit substrate 110 includes a core layer 111, a plurality of conductive vias 112 that penetrate the core layer 111 and are separated from each other, and patterned circuit layers that connect opposite ends of the conductive vias 112 and are alternately arranged with the multi-layer dielectric layers 116. 113 and a conductive structure 114 connecting two adjacent patterned circuit layers. The patterned circuit layer 113, the dielectric layer 116 and the conductive structure 114 can define a build-up circuit structure, which are respectively located on opposite sides of the core layer 111. That is to say, the circuit substrate 110 is a high-density double-sided circuit board. One side of the core layer 111 includes a conductive structure 115, wherein the conductive structure 115 is electrically connected to the patterned circuit layer 113, and the surface 115a of the conductive structure 115 is flush with the surface T of the circuit substrate 110. Here, the surface T of the circuit substrate 110 and the surface 115a of the conductive structure 115 can define a connection surface for structural and electrical connection with the first circuit layer 120a. The other side of the core layer 111 also includes a solder mask layer 117 and a surface treatment layer, where the solder mask layer 117 covers the surface of the dielectric layer 116 and exposes the patterned circuit layer 113, and the surface treatment layer is configured to be soldered The patterned circuit layer 113 is exposed by the layer 117 . Here, the surface treatment layer includes a first metal layer 118 and a second metal layer 119 disposed on the first metal layer 118. The material of the first metal layer 118 and the second metal layer 119 is, for example, a nickel layer, gold layer, etc. layer, silver layer, nickel-palladium-gold layer or other suitable metal or alloy to protect the patterned circuit layer 113 from oxidation.

請同時參考圖1A、圖1B以及圖1C,在本實施例中,第一線路層120a包括至少一線路124,特別是,線路124的線寬/厚度的比值例如是大於等於1/2.5,意即具有較高的深寬比。於一 實施例中,線路124的線寬為L1,而圖案化線路層113的線寬為L2,其中線路124的線寬L1與線距例如分別為小於等於10微米,而圖案化線路層113的線寬L2與線距例如分別為40微米。再者,本實施例的第一線路層120a還包括至少一接墊125,特別是,接墊125的直徑D1例如是小於等於導電結構115的直徑D2的1/5。此處,接墊125的直徑D1例如是小於50微米,可增大第一線路層120a的佈線面積。因製程方式,本實施例的第一線路層120a還包括種子層122,其中種子層122是位於線路124與接墊125的下方,且直接連接並對應線路124與接墊125設置。 Please refer to FIGS. 1A, 1B and 1C at the same time. In this embodiment, the first circuit layer 120a includes at least one circuit 124. In particular, the line width/thickness ratio of the circuit 124 is, for example, greater than or equal to 1/2.5, meaning that That is, it has a higher aspect ratio. Yu Yi In the embodiment, the line width of the line 124 is L1, and the line width of the patterned line layer 113 is L2. The line width L1 and line spacing of the line 124 are, for example, less than or equal to 10 microns respectively, and the lines of the patterned line layer 113 are The width L2 and the line spacing are, for example, 40 microns respectively. Furthermore, the first circuit layer 120a of this embodiment further includes at least one pad 125. In particular, the diameter D1 of the pad 125 is, for example, less than or equal to 1/5 of the diameter D2 of the conductive structure 115. Here, the diameter D1 of the pad 125 is, for example, less than 50 microns, which can increase the wiring area of the first circuit layer 120a. Due to the manufacturing process, the first circuit layer 120a of this embodiment also includes a seed layer 122, where the seed layer 122 is located below the circuit 124 and the pad 125, and is directly connected to and disposed corresponding to the circuit 124 and the pad 125.

此外,請再參考圖1A,本實施例的電路板結構100a還可包括絕緣層130、絕緣層150、第三線路層145以及第四線路層160。絕緣層130覆蓋第一線路層120a,而第二線路層140埋設於絕緣層150且與第一線路層120a電性連接。第二線路層140包括導電圖案144與位於導電圖案144下方的種子層142。第三線路層145與第二線路層140電性連接,其中第三線路層145與第二線路層140是由同一道製程所形成,因此彼此之間為無縫連接。絕緣層150覆蓋第三線路層145,而第四線路層160配置於絕緣層150且穿過絕緣層150與第三線路層145電性連接。第四線路層160包括導電圖案164與位於導電圖案164下方的種子層162。 In addition, please refer to FIG. 1A again. The circuit board structure 100a of this embodiment may also include an insulating layer 130, an insulating layer 150, a third circuit layer 145 and a fourth circuit layer 160. The insulating layer 130 covers the first circuit layer 120a, and the second circuit layer 140 is buried in the insulating layer 150 and is electrically connected to the first circuit layer 120a. The second circuit layer 140 includes a conductive pattern 144 and a seed layer 142 located under the conductive pattern 144 . The third circuit layer 145 and the second circuit layer 140 are electrically connected. The third circuit layer 145 and the second circuit layer 140 are formed by the same process, so they are seamlessly connected to each other. The insulating layer 150 covers the third circuit layer 145, and the fourth circuit layer 160 is disposed on the insulating layer 150 and is electrically connected to the third circuit layer 145 through the insulating layer 150. The fourth circuit layer 160 includes a conductive pattern 164 and a seed layer 162 located under the conductive pattern 164 .

本實施例的電路板結構100a於電路基板110上具有四層的線路結構,相較於現有技術因多一層轉接層而有五層線路結構而言,本實施例的電路板結構100a可減少層數,以有效地縮短訊 號傳輸路徑,而具有較佳的訊號完整性。再者,第一線路層120a是直接配置於電路基板110的表面T上,且與電路基板110的導電結構115電性連接,其中第一線路層120a的線寬小於或等於電路基板110的圖案化線路層113的線寬的1/4。也就是說,本實施例的電路板結構100a可以直接在電路基板110上形成細線寬的第一線路層120a,可使佈線面積增大,減少佈線層數。此外,由於本實施例沒有使用現有技術中以銲錫及填充膠體所形成的連接層,因此本實施例的電路板結構100a可具有較佳的共平面性。 The circuit board structure 100a of this embodiment has a four-layer circuit structure on the circuit substrate 110. Compared with the prior art which has a five-layer circuit structure due to an additional transfer layer, the circuit board structure 100a of this embodiment can reduce the number of layers to effectively shorten the message signal transmission path and has better signal integrity. Furthermore, the first circuit layer 120a is directly disposed on the surface T of the circuit substrate 110 and is electrically connected to the conductive structure 115 of the circuit substrate 110. The line width of the first circuit layer 120a is less than or equal to the pattern of the circuit substrate 110. 1/4 of the line width of the line layer 113. That is to say, the circuit board structure 100a of this embodiment can directly form the first circuit layer 120a with a thin line width on the circuit substrate 110, which can increase the wiring area and reduce the number of wiring layers. In addition, since this embodiment does not use the connection layer formed by solder and filling colloid in the prior art, the circuit board structure 100a of this embodiment can have better coplanarity.

圖2A至圖2Q為圖1A的電路板結構的製作方法的剖面示意圖。在製程上,首先,請先參考圖2A,提供電路基板110’,其中電路基板110’例如是一高密度互連基板。電路基板110’包括核心層111、貫穿核心層111且彼此分離的多個導電通孔112、連接導電通孔112的相對兩端且與多層介電層116交替排列的圖案化線路層113以及連接相鄰兩圖案化線路層的導電結構114。圖案化線路層113、介電層116以及導電結構114可定義出增層線路結構,分別位於核心層111的相對兩側上。電路基板110彼此相對的兩側上還包括有銅箔層M,其中銅箔層M配置於最外側的介電層116上,且覆蓋最外側的導電結構114、115。 FIGS. 2A to 2Q are schematic cross-sectional views of the manufacturing method of the circuit board structure of FIG. 1A . In terms of the manufacturing process, first, please refer to FIG. 2A to provide a circuit substrate 110', where the circuit substrate 110' is, for example, a high-density interconnection substrate. The circuit substrate 110' includes a core layer 111, a plurality of conductive vias 112 that penetrate the core layer 111 and are separated from each other, a patterned circuit layer 113 that connects opposite ends of the conductive vias 112 and is alternately arranged with the multi-layer dielectric layer 116, and connections The conductive structures 114 of two adjacent patterned circuit layers. The patterned circuit layer 113, the dielectric layer 116 and the conductive structure 114 can define a build-up circuit structure, which are respectively located on opposite sides of the core layer 111. The circuit substrate 110 also includes a copper foil layer M on two opposite sides, wherein the copper foil layer M is disposed on the outermost dielectric layer 116 and covers the outermost conductive structures 114 and 115 .

接著,請同時參考圖2A以及圖2B,進行蝕刻程序,以完全移除核心層111上方銅箔層M,而暴露出最外側的介電層116以及最外側的導電結構115。導電結構115的表面115a切齊於表面T,此處,表面T與導電結構115的表面115a可定義出連接面。 此處,連接面可是為電路基板110最外側的表面或稱為上表面。接著,對核心層111下方的銅箔層M進行微影黃光程序,而形成下方最外側的圖案化線路層113。接著,形成防銲層117以及表面處理層於核心層111下方最外側的圖案化線路層113上。防銲層117覆蓋在介電層116的表面上且暴露出圖案化線路層113,而表面處理層配置在被防銲層117所暴露出的圖案化線路層113上。此處,表面處理層包括第一金屬層118與配置於第一金屬層118上的第二金屬層119,其中第一金屬層118的材質與第二金屬層119的材質例如是鎳層、金層、銀層、鎳鈀金層或其他適當的金屬或合金,可保護圖案化線路層113以避免產生氧化。此處,已完成球柵陣列封裝(Ball Grid Array)面的製作,其中球柵陣列封裝面可視為是電路基板110最外側的表面或稱為下表面。需說明的是,本實施例並不限制製作連接面與球柵陣列封裝面的順序。於一實施例中,亦可先製作球柵陣列封裝面,而再製作連接面,此仍屬於本發明所欲保護的範圍。至此,已完成電路基板110的製作。 Next, please refer to FIG. 2A and FIG. 2B simultaneously to perform an etching process to completely remove the copper foil layer M above the core layer 111 and expose the outermost dielectric layer 116 and the outermost conductive structure 115 . The surface 115a of the conductive structure 115 is flush with the surface T, where the surface T and the surface 115a of the conductive structure 115 can define a connection surface. Here, the connection surface may be the outermost surface of the circuit substrate 110 or called the upper surface. Next, a photolithography process is performed on the copper foil layer M below the core layer 111 to form the outermost patterned circuit layer 113 below. Next, a solder resist layer 117 and a surface treatment layer are formed on the outermost patterned circuit layer 113 below the core layer 111 . The solder resist layer 117 covers the surface of the dielectric layer 116 and exposes the patterned circuit layer 113 , and the surface treatment layer is disposed on the patterned circuit layer 113 exposed by the solder resist layer 117 . Here, the surface treatment layer includes a first metal layer 118 and a second metal layer 119 disposed on the first metal layer 118. The material of the first metal layer 118 and the second metal layer 119 is, for example, a nickel layer, gold layer, etc. layer, silver layer, nickel-palladium-gold layer or other suitable metal or alloy to protect the patterned circuit layer 113 from oxidation. Here, the production of the ball grid array package (Ball Grid Array) surface has been completed, where the ball grid array package surface can be regarded as the outermost surface of the circuit substrate 110 or called the lower surface. It should be noted that this embodiment does not limit the order of manufacturing the connection surface and the ball grid array packaging surface. In one embodiment, the ball grid array packaging surface can also be fabricated first, and then the connection surface can be fabricated, which still falls within the scope of protection of the present invention. At this point, the production of the circuit substrate 110 has been completed.

接著,請參考圖2C,濺鍍種子層S1於電路基板110的表面T上,以覆蓋電路基板110的表面T與導電結構115的表面115a。此時,種子層S1是形成在連接面上。 Next, please refer to FIG. 2C , the seed layer S1 is sputtered on the surface T of the circuit substrate 110 to cover the surface T of the circuit substrate 110 and the surface 115 a of the conductive structure 115 . At this time, the seed layer S1 is formed on the connection surface.

接著,請參考圖2D,透過塗佈濕膜光阻、黃光微影光阻而形成圖案化光阻層P1於種子層S1上,其中圖案化光阻層P1具有多個開口O1,其中開口O1暴露出部分種子層S1。此處,圖案 化光阻層P1為濕膜光阻,以塗佈的方式形成在種子層S1上,而後進行微影蝕刻而形成圖案化光阻層P1。 Next, please refer to Figure 2D. A patterned photoresist layer P1 is formed on the seed layer S1 by coating wet film photoresist and yellow light lithography photoresist. The patterned photoresist layer P1 has a plurality of openings O1, and the opening O1 is exposed. Extract part of the seed layer S1. Here, pattern The patterned photoresist layer P1 is a wet film photoresist, which is formed on the seed layer S1 by coating, and is then photolithographically etched to form a patterned photoresist layer P1.

接著,請參考圖2E,以圖案化光阻層P1為電鍍罩幕,以電鍍一導電材料C1於種子層S1上,其中導電材料C1填滿開口O1且連接種子層S1。 Next, please refer to FIG. 2E, using the patterned photoresist layer P1 as an electroplating mask, a conductive material C1 is electroplated on the seed layer S1, where the conductive material C1 fills the opening O1 and connects the seed layer S1.

接著,請同時參考圖2E及圖2F,移除圖案化光阻層P1及其下之部分種子層S1,而形成第一線路層120a於電路基板110的表面T上。此時,電路基板110的表面T也被暴露出來,且第一線路層120a直接接觸表面T並結構性與電性連接導電結構115。較佳地,第一線路層120a的線寬L1(請看圖1B)小於或等於圖案化線路層113的線寬L2(請看圖1B)的1/4。 Next, please refer to FIG. 2E and FIG. 2F simultaneously to remove the patterned photoresist layer P1 and part of the seed layer S1 thereunder to form the first circuit layer 120 a on the surface T of the circuit substrate 110 . At this time, the surface T of the circuit substrate 110 is also exposed, and the first circuit layer 120a directly contacts the surface T and is structurally and electrically connected to the conductive structure 115 . Preferably, the line width L1 of the first circuit layer 120a (see FIG. 1B) is less than or equal to 1/4 of the line width L2 of the patterned circuit layer 113 (see FIG. 1B).

接著,請參考圖2G,以塗佈(coating)的方式形成絕緣層130,以覆蓋第一線路層120a、電路基板110的表面T以及導電結構115的表面115a。 Next, please refer to FIG. 2G , an insulating layer 130 is formed by coating to cover the first circuit layer 120 a, the surface T of the circuit substrate 110 and the surface 115 a of the conductive structure 115 .

接著,請參考圖2H,以黃光微影絕緣層130,而形成盲孔135於絕緣層130上,其中盲孔135暴露出部分第一線路層120a。 Next, please refer to FIG. 2H. The insulating layer 130 is lithographed with a yellow light to form a blind hole 135 on the insulating layer 130. The blind hole 135 exposes part of the first circuit layer 120a.

接著,請參考圖2I,濺鍍種子層S2於絕緣層130上,其中種子層S2覆蓋絕緣層130的表面以及盲孔135的內壁。 Next, please refer to FIG. 2I , a seed layer S2 is sputtered on the insulating layer 130 , where the seed layer S2 covers the surface of the insulating layer 130 and the inner wall of the blind hole 135 .

接著,請參考圖2J,塗佈光阻層,並以黃光微影光阻層而形成圖案化光阻層P2於種子層S2上,其中圖案化光阻層P2具有多個開口O2,其中開口O2暴露出部分種子層S2。 Next, please refer to Figure 2J. A photoresist layer is coated, and the photoresist layer is lithographed with yellow light to form a patterned photoresist layer P2 on the seed layer S2. The patterned photoresist layer P2 has a plurality of openings O2, among which the openings O2 Part of the seed layer S2 is exposed.

接著,請參考圖2K,以圖案化光阻層P2為電鍍罩幕, 以電鍍一導電材料C2於種子層S2上,其中導電材料C2填滿開口O2且連接種子層S2。 Next, please refer to Figure 2K to use the patterned photoresist layer P2 as the electroplating mask. A conductive material C2 is electroplated on the seed layer S2, wherein the conductive material C2 fills the opening O2 and connects the seed layer S2.

接著,請同時參考圖2K以及圖2L,移除圖案化光阻層P2及其下之部分種子層S2,而形成第二線路層140於絕緣層130的盲孔135內以及形成第三線路層145於絕緣層130的表面131上。此時,第二線路層140形成於第一線路層120a上,其中第二線路層140直接接觸第一線路層120a且與第一線路層120a電性連接。 Next, please refer to FIG. 2K and FIG. 2L at the same time, remove the patterned photoresist layer P2 and part of the seed layer S2 thereunder, and form the second circuit layer 140 in the blind hole 135 of the insulating layer 130 and form the third circuit layer. 145 on the surface 131 of the insulating layer 130 . At this time, the second circuit layer 140 is formed on the first circuit layer 120a, where the second circuit layer 140 directly contacts the first circuit layer 120a and is electrically connected to the first circuit layer 120a.

接著,請參考圖2M,以塗佈的方式形成絕緣層150,以覆蓋第三線路層145。以黃光微影絕緣層150而形成盲孔155,其中盲孔155暴露出部分第三線路層145。 Next, please refer to FIG. 2M , an insulating layer 150 is formed by coating to cover the third circuit layer 145 . The insulating layer 150 is lithographed using yellow light to form a blind hole 155 , wherein the blind hole 155 exposes a portion of the third circuit layer 145 .

接著,請參考圖2N,濺鍍種子層S3於絕緣層150上,其中種子層S3覆蓋絕緣層150的表面以及盲孔155的內壁。 Next, please refer to FIG. 2N , a seed layer S3 is sputtered on the insulating layer 150 , where the seed layer S3 covers the surface of the insulating layer 150 and the inner wall of the blind hole 155 .

接著,請參考圖2O,塗佈光阻層,並以黃光微影光阻層而形成圖案化光阻層P3於種子層S3上,其中圖案化光阻層P3具有多個開口O3,其中開口O3暴露出部分種子層S3。 Next, please refer to FIG. 2O, a photoresist layer is coated, and the photoresist layer is lithographed with yellow light to form a patterned photoresist layer P3 on the seed layer S3. The patterned photoresist layer P3 has a plurality of openings O3, and the opening O3 Part of the seed layer S3 is exposed.

之後,請參考圖2P,以圖案化光阻層P3為電鍍罩幕,以電鍍一導電材料C3於種子層S3上,其中導電材料C3填滿開口O3且連接種子層S3。 After that, please refer to FIG. 2P, using the patterned photoresist layer P3 as an electroplating mask, a conductive material C3 is electroplated on the seed layer S3, where the conductive material C3 fills the opening O3 and connects the seed layer S3.

最後,請同時參考圖2P以及圖2Q,移除圖案化光阻層P3及其下之部分種子層S3,而形成包括導電圖案164及其下方種子層162的第四線路層160於絕緣層150的盲孔155(請看圖2M) 內以及絕緣層150的表面151上。至此,已完成電路板結構100a的製作。 Finally, please refer to FIG. 2P and FIG. 2Q at the same time, remove the patterned photoresist layer P3 and part of the seed layer S3 thereunder, and form the fourth circuit layer 160 including the conductive pattern 164 and the underlying seed layer 162 on the insulating layer 150 Blind hole 155 (please see Figure 2M) inside and on the surface 151 of the insulating layer 150 . At this point, the fabrication of the circuit board structure 100a has been completed.

由於第一線路層120a可直接形成在電路基板110的表面T上,因此本實施例的電路板結構100a的製作方法可具有降低製程層數及減少製作流程,增加佈線面積及提高生產效率,以及降低訊號傳輸路徑而提升訊號完整性的優勢。 Since the first circuit layer 120a can be directly formed on the surface T of the circuit substrate 110, the manufacturing method of the circuit board structure 100a of this embodiment can reduce the number of process layers and manufacturing processes, increase the wiring area and improve production efficiency, and The advantage of reducing the signal transmission path and improving signal integrity.

在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。 It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be repeated in the following embodiments.

圖3是依照本發明的另一實施例的一種電路板結構的剖面示意圖。請同時參考圖1A及圖3,本實施例的電路板結構100b與圖1A的電路板結構100a相似,兩者的差異在於:本實施例的第一線路層120b為單層結構,其材質例如是銅箔,但不以此為限。 FIG. 3 is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. Please refer to FIG. 1A and FIG. 3 at the same time. The circuit board structure 100b of this embodiment is similar to the circuit board structure 100a of FIG. 1A. The difference between the two is that the first circuit layer 120b of this embodiment is a single-layer structure, and its material is such as It is copper foil, but it is not limited to this.

圖4A至圖4D為圖3的電路板結構的一種製作方法的局部剖面示意圖。在製程上,於圖2A的步驟後,請參考圖4A,可選擇性地先完成核心層111下方的球柵陣列封裝面的製作後,再將核心層111上方的銅箔層M進行減薄程序,而形成銅箔層M’。接著,請參考圖4B,以塗佈的方式,形成光阻層P於銅箔層M’上。此處,光阻層P為濕膜光阻,適於製作細線路,且具有較佳的解析度。接著,請參考圖4C,以黃光微影光阻層P,而形成一圖案化光阻層P4於銅箔層M’上。之後,請同時參考圖4C以及圖 4D,蝕刻暴露於圖案化光阻層P4外的銅箔層M’,而暴露出電路基板110的部分表面T。接著,移除圖案化光阻層P4,而形成第一線路層120b於電路基板110的表面T上。最後,接續圖2G至圖2Q的步驟,即可完成圖3的電路板結構100b。簡言之,本實施例是透過蝕刻電路基板110’上的銅箔層M’,來形成第一線路層120b。 4A to 4D are partial cross-sectional schematic diagrams of a manufacturing method of the circuit board structure of FIG. 3 . In terms of the manufacturing process, after the steps in Figure 2A, please refer to Figure 4A. You can optionally complete the production of the ball grid array packaging surface below the core layer 111 first, and then thin the copper foil layer M above the core layer 111. procedure to form the copper foil layer M'. Next, please refer to FIG. 4B to form a photoresist layer P on the copper foil layer M' by coating. Here, the photoresist layer P is a wet film photoresist, which is suitable for making thin circuits and has better resolution. Next, please refer to FIG. 4C. The photoresist layer P is lithographed with yellow light to form a patterned photoresist layer P4 on the copper foil layer M'. After that, please refer to both Figure 4C and Figure 4D, etching the copper foil layer M′ exposed outside the patterned photoresist layer P4 to expose part of the surface T of the circuit substrate 110. Then, the patterned photoresist layer P4 is removed, and the first circuit layer 120b is formed on the surface T of the circuit substrate 110 . Finally, by continuing the steps of FIG. 2G to FIG. 2Q , the circuit board structure 100b of FIG. 3 can be completed. In short, in this embodiment, the first circuit layer 120b is formed by etching the copper foil layer M' on the circuit substrate 110'.

圖5為圖3的電路板結構的另一種製作方法的局部剖面示意圖。在製程上,於圖4A的步驟後,請參考圖5,對銅箔層M’進行一雷射程序,以雷射光L雷射銅箔層M’而形成第一線路層120b於電路基板110的表面T上。之後,最後,接續圖2G至圖2Q的步驟,即可完成圖3的電路板結構100b。簡言之,本實施例是透過對電路基板110’上的銅箔層M’進行雷射雕刻,而形成第一線路層120b。 FIG. 5 is a partial cross-sectional schematic diagram of another manufacturing method of the circuit board structure of FIG. 3 . In terms of the manufacturing process, after the steps of Figure 4A, please refer to Figure 5 to perform a laser process on the copper foil layer M', using laser light L to laser the copper foil layer M' to form the first circuit layer 120b on the circuit substrate 110 on the surface T. After that, finally, by continuing the steps of FIG. 2G to FIG. 2Q , the circuit board structure 100b of FIG. 3 can be completed. In short, in this embodiment, the first circuit layer 120b is formed by laser engraving the copper foil layer M' on the circuit substrate 110'.

綜上所述,在本發明的電路板結構的設計中,第一線路層是直接配置於電路基板的表面上,且與電路基板的導電結構電性連接,其中第一線路層的線寬小於或等於電路基板的圖案化線路層的線寬的1/4。也就是說,本發明的電路板結構無須設置現有技術中的轉接層,而是可以直接在電路基板上形成細線寬的第一線路層,可有效地縮短訊號傳輸路徑,而具有較佳的訊號完整性。 To sum up, in the design of the circuit board structure of the present invention, the first circuit layer is directly disposed on the surface of the circuit substrate and is electrically connected to the conductive structure of the circuit substrate, wherein the line width of the first circuit layer is less than Or equal to 1/4 of the line width of the patterned circuit layer of the circuit substrate. That is to say, the circuit board structure of the present invention does not need to provide a transfer layer in the prior art, but can directly form a first circuit layer with a thin line width on the circuit substrate, which can effectively shorten the signal transmission path and has better Signal integrity.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍 當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, Protection scope of the invention The scope of the patent application shall be determined by the attached patent application.

100a:電路板結構 100a: Circuit board structure

110:電路基板 110:Circuit substrate

111:核心層 111:Core layer

112:導電通孔 112:Conductive via

113:圖案化線路層 113: Patterned circuit layer

114、115:導電結構 114, 115: Conductive structure

115a:上表面 115a: Upper surface

116:介電層 116:Dielectric layer

117:防銲層 117: Solder mask

118:第一金屬層 118: First metal layer

119:第二金屬層 119: Second metal layer

120a:第一線路層 120a: First line layer

122、142、162:種子層 122, 142, 162: seed layer

124:線路 124:Line

125:接墊 125:pad

130、150:絕緣層 130, 150: Insulating layer

140:第二線路層 140: Second line layer

144、164:導電圖案 144, 164: Conductive pattern

145:第三線路層 145: The third line layer

160:第四線路層 160: The fourth line layer

T:表面 T: Surface

Claims (10)

一種電路板結構,包括:一電路基板,具有一表面且包括至少一導電結構與至少一圖案化線路層,其中該至少一導電結構與該至少一圖案化線路層電性連接,且該至少一導電結構的一上表面切齊於該表面;一第一線路層,直接配置於該電路基板的該表面上,且與該至少一導電結構電性連接,其中該第一線路層的線寬小於或等於該至少一圖案化線路層的線寬的1/4;以及一第二線路層,直接配置於該第一線路層上,且與該第一線路層電性連接。 A circuit board structure includes: a circuit substrate having a surface and including at least one conductive structure and at least one patterned circuit layer, wherein the at least one conductive structure is electrically connected to the at least one patterned circuit layer, and the at least one An upper surface of the conductive structure is flush with the surface; a first circuit layer is directly disposed on the surface of the circuit substrate and is electrically connected to the at least one conductive structure, wherein the line width of the first circuit layer is less than Or equal to 1/4 of the line width of the at least one patterned circuit layer; and a second circuit layer directly disposed on the first circuit layer and electrically connected to the first circuit layer. 如請求項1所述的電路板結構,其中該電路基板包括一高密度互連基板。 The circuit board structure of claim 1, wherein the circuit substrate includes a high-density interconnection substrate. 如請求項1所述的電路板結構,其中該第一線路層包括至少一線路,且該至少一線路的線寬/厚度的比值大於等於1/2.5。 The circuit board structure of claim 1, wherein the first circuit layer includes at least one circuit, and the line width/thickness ratio of the at least one circuit is greater than or equal to 1/2.5. 如請求項3所述的電路板結構,其中該至少一線路的線寬與線距分別為小於等於10微米。 The circuit board structure according to claim 3, wherein the line width and line spacing of the at least one line are respectively less than or equal to 10 microns. 如請求項1所述的電路板結構,其中該第一線路層包括至少一接墊,且該至少一接墊的直徑小於等於該至少一導電結構的直徑的1/5。 The circuit board structure of claim 1, wherein the first circuit layer includes at least one pad, and the diameter of the at least one pad is less than or equal to 1/5 of the diameter of the at least one conductive structure. 一種電路板結構的製作方法,包括:提供一電路基板,該電路基板具有一表面且包括至少一導電 結構與至少一圖案化線路層,其中該至少一導電結構與該至少一圖案化線路層電性連接,且該至少一導電結構的一上表面切齊於該表面;形成一第一線路層於該電路基板的該表面上,其中該第一線路層直接接觸該表面且與該至少一導電結構電性連接,該第一線路層的線寬小於或等於該至少一圖案化線路層的線寬的1/4;以及形成一第二線路層於該第一線路層上,其中該第二線路層直接接觸該第一線路層且與該第一線路層電性連接。 A method for manufacturing a circuit board structure, including: providing a circuit substrate having a surface and including at least one conductive structure and at least one patterned circuit layer, wherein the at least one conductive structure is electrically connected to the at least one patterned circuit layer, and an upper surface of the at least one conductive structure is flush with the surface; forming a first circuit layer on On the surface of the circuit substrate, wherein the first circuit layer directly contacts the surface and is electrically connected to the at least one conductive structure, the line width of the first circuit layer is less than or equal to the line width of the at least one patterned circuit layer 1/4; and forming a second circuit layer on the first circuit layer, wherein the second circuit layer directly contacts the first circuit layer and is electrically connected to the first circuit layer. 如請求項6所述的電路板結構的製作方法,其中形成該第一線路層於該電路基板的該表面上的步驟包括:形成一種子層於該電路基板的該表面上;形成一圖案化光阻層於該種子層上;以該圖案化光阻層為電鍍罩幕,以電鍍一導電材料於該種子層上;以及移除該圖案化光阻層及其下之部分該種子層,而形成該第一線路層。 The manufacturing method of a circuit board structure as claimed in claim 6, wherein the step of forming the first circuit layer on the surface of the circuit substrate includes: forming a sub-layer on the surface of the circuit substrate; forming a pattern Put a photoresist layer on the seed layer; use the patterned photoresist layer as an electroplating mask to electroplating a conductive material on the seed layer; and remove the patterned photoresist layer and the part of the seed layer underneath, The first circuit layer is formed. 如請求項6所述的電路板結構的製作方法,其中提供該電路基板時,一銅箔層覆蓋在該表面與該至少一導電結構上,形成該第一線路層於該電路基板的該表面上的步驟包括:形成一圖案化光阻層於該銅箔層上;蝕刻暴露於該圖案化光阻層外的該銅箔層,而暴露出該電路基板的部分該表面;以及 移除該圖案化光阻層,而形成該第一線路層於該電路基板的該表面上。 The manufacturing method of a circuit board structure as claimed in claim 6, wherein when the circuit substrate is provided, a copper foil layer covers the surface and the at least one conductive structure to form the first circuit layer on the surface of the circuit substrate. The above steps include: forming a patterned photoresist layer on the copper foil layer; etching the copper foil layer exposed outside the patterned photoresist layer to expose part of the surface of the circuit substrate; and The patterned photoresist layer is removed to form the first circuit layer on the surface of the circuit substrate. 如請求項6所述的電路板結構的製作方法,其中提供該電路基板時,一銅箔層覆蓋在該表面與該至少一導電結構上,形成該第一線路層於該電路基板的該表面上的步驟包括:對該銅箔層進行一雷射程序,而形成該第一線路層於該電路基板的該表面上。 The manufacturing method of a circuit board structure as claimed in claim 6, wherein when the circuit substrate is provided, a copper foil layer covers the surface and the at least one conductive structure to form the first circuit layer on the surface of the circuit substrate. The above step includes: performing a laser process on the copper foil layer to form the first circuit layer on the surface of the circuit substrate. 如請求項6所述的電路板結構的製作方法,其中該電路基板包括一高密度互連基板。 The method of manufacturing a circuit board structure as claimed in claim 6, wherein the circuit substrate includes a high-density interconnection substrate.
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Citations (4)

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Publication number Priority date Publication date Assignee Title
TW200611611A (en) * 2004-09-30 2006-04-01 Via Tech Inc Signal transmission structure and circuit substrate thereof
TW200731898A (en) * 2006-02-15 2007-08-16 Phoenix Prec Technology Corp Circuit board structure and method for fabricating the same
TW201134335A (en) * 2010-03-19 2011-10-01 Via Tech Inc Process for fabricating circuit substrate, and circuit substrate
CN106304663A (en) * 2015-06-26 2017-01-04 健鼎(无锡)电子有限公司 Patterned lines line structure and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200611611A (en) * 2004-09-30 2006-04-01 Via Tech Inc Signal transmission structure and circuit substrate thereof
TW200731898A (en) * 2006-02-15 2007-08-16 Phoenix Prec Technology Corp Circuit board structure and method for fabricating the same
TW201134335A (en) * 2010-03-19 2011-10-01 Via Tech Inc Process for fabricating circuit substrate, and circuit substrate
CN106304663A (en) * 2015-06-26 2017-01-04 健鼎(无锡)电子有限公司 Patterned lines line structure and preparation method thereof

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