TWI820613B - 成膜方法 - Google Patents

成膜方法 Download PDF

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Publication number
TWI820613B
TWI820613B TW111106913A TW111106913A TWI820613B TW I820613 B TWI820613 B TW I820613B TW 111106913 A TW111106913 A TW 111106913A TW 111106913 A TW111106913 A TW 111106913A TW I820613 B TWI820613 B TW I820613B
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TW
Taiwan
Prior art keywords
gas
film
processed
forming
plasma
Prior art date
Application number
TW111106913A
Other languages
English (en)
Chinese (zh)
Other versions
TW202224001A (zh
Inventor
熊倉翔
田端雅弘
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202224001A publication Critical patent/TW202224001A/zh
Application granted granted Critical
Publication of TWI820613B publication Critical patent/TWI820613B/zh

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    • H10P14/6336—
    • H10P14/6339—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10P14/24—
    • H10P14/6682—
    • H10P14/6687—
    • H10P14/6903—
    • H10P14/69215—
    • H10P50/242—
    • H10P50/283—
    • H10P50/644—
    • H10P50/73—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Magnetic Heads (AREA)
  • Polarising Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW111106913A 2017-04-14 2018-04-09 成膜方法 TWI820613B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017080800A JP6767302B2 (ja) 2017-04-14 2017-04-14 成膜方法
JP2017-080800 2017-04-14

Publications (2)

Publication Number Publication Date
TW202224001A TW202224001A (zh) 2022-06-16
TWI820613B true TWI820613B (zh) 2023-11-01

Family

ID=63790890

Family Applications (2)

Application Number Title Priority Date Filing Date
TW111106913A TWI820613B (zh) 2017-04-14 2018-04-09 成膜方法
TW107112019A TWI760472B (zh) 2017-04-14 2018-04-09 成膜方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW107112019A TWI760472B (zh) 2017-04-14 2018-04-09 成膜方法

Country Status (5)

Country Link
US (2) US10672605B2 (enExample)
JP (1) JP6767302B2 (enExample)
KR (1) KR102472335B1 (enExample)
CN (1) CN108735597B (enExample)
TW (2) TWI820613B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
KR102794843B1 (ko) * 2019-11-18 2025-04-10 캐논 톡키 가부시키가이샤 성막장치, 이를 사용한 성막방법 및 전자디바이스 제조방법
KR102793505B1 (ko) * 2019-11-19 2025-04-08 캐논 톡키 가부시키가이샤 냉각재킷, 이를 포함하는 성막장치, 이를 사용한 성막방법 및 전자디바이스 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0867936A2 (en) * 1997-03-24 1998-09-30 Nec Corporation Semiconductor device having a barrier film for preventing penetration of moisture

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JPH06318576A (ja) * 1993-04-30 1994-11-15 Oki Electric Ind Co Ltd ドライエッチング方法
JP3259529B2 (ja) * 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7282766B2 (en) * 2005-01-17 2007-10-16 Fujitsu Limited Fin-type semiconductor device with low contact resistance
JP2012018989A (ja) * 2010-07-06 2012-01-26 Elpida Memory Inc 半導体装置の製造方法
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
CN104488084B (zh) * 2012-07-25 2017-08-04 电力集成公司 形成锥形氧化物的方法
CN104217947B (zh) * 2013-05-31 2018-11-06 中国科学院微电子研究所 半导体制造方法
US9378971B1 (en) * 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
JP6366454B2 (ja) * 2014-10-07 2018-08-01 東京エレクトロン株式会社 被処理体を処理する方法
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
JP6590333B2 (ja) 2015-02-26 2019-10-16 学校法人東京理科大学 Ｄｎａ結合ドメイン組込み用ベクターおよびそのセット、融合タンパク質コーディングベクターおよびそのセットならびにその製造方法、デスティネーションベクター、植物細胞用発現ベクターおよびその製造方法、植物細胞用発現ベクター作製用キット、形質転換方法、ならびにゲノム編集方法
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
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JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
US10199388B2 (en) * 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0867936A2 (en) * 1997-03-24 1998-09-30 Nec Corporation Semiconductor device having a barrier film for preventing penetration of moisture

Also Published As

Publication number Publication date
US11574806B2 (en) 2023-02-07
KR20180116151A (ko) 2018-10-24
JP6767302B2 (ja) 2020-10-14
US20200273699A1 (en) 2020-08-27
KR102472335B1 (ko) 2022-11-30
CN108735597A (zh) 2018-11-02
TWI760472B (zh) 2022-04-11
JP2018182104A (ja) 2018-11-15
TW202224001A (zh) 2022-06-16
TW201901762A (zh) 2019-01-01
US20180301332A1 (en) 2018-10-18
CN108735597B (zh) 2022-10-25
US10672605B2 (en) 2020-06-02

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