TWI820255B - 試驗用晶圓及其製造方法 - Google Patents

試驗用晶圓及其製造方法 Download PDF

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TWI820255B
TWI820255B TW108142079A TW108142079A TWI820255B TW I820255 B TWI820255 B TW I820255B TW 108142079 A TW108142079 A TW 108142079A TW 108142079 A TW108142079 A TW 108142079A TW I820255 B TWI820255 B TW I820255B
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河西繁
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日商東京威力科創股份有限公司
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Abstract

提供一種可模擬試驗實物元件之發熱的試驗用晶圓及其製造方法。 一種模擬試驗晶圓上之元件的發熱之試驗用晶圓，係具有：矽晶圓；以及矽加熱器，係接合於矽晶圓表面。

Description

試驗用晶圓及其製造方法
本揭露係關於一種試驗用晶圓及其製造方法。
半導體製造程序中，係將具有既定電路圖案之多數元件(IC晶片)形成在半導體晶圓(以下，僅稱為晶圓。)上。所形成之元件會進行電氣特性等的檢查，而分辨出良品與不良品。元件之檢查係在例如將各元件分割前的晶圓之狀態下，使用檢查裝置來加以進行。
元件之檢查裝置係具備：探針卡，係具有多數針狀探針；載置台，係載置晶圓；以及測試器(參照專利文獻1)。此檢查裝置係讓探針卡之各探針接觸於元件之電極所對應而設置之電極接點或銲錫凸塊，而讓來自元件之訊號朝測試器傳送以檢查元件之電氣特性。又，專利文獻1之檢查裝置係在檢查元件之電氣特性時，為了再現該元件之封裝環境，便會藉由載置台內之冷媒流道或加熱器來控制載置台之溫度。
近年來，在IC中，會朝向高速化、高積集化來發展，因此，形成在晶圓之元件的發熱量便會增大，而其吸熱方法便會成為重要的技術。在元件之檢查裝置中，除了驗證吸熱方法外，要如何模擬試驗出元件的實際發熱狀況便會成為重要的技術。
[先前技術文獻] [專利文獻] 專利文獻1：日本特開平10-135315號公報
本揭露係提供一種可模擬試驗實物元件之發熱的試驗用晶圓及其製造方法。
本揭露一態樣相關之試驗用晶圓係模擬試驗晶圓上之元件的發熱之試驗用晶圓，具有：矽晶圓；以及矽加熱器，係接合於該矽晶圓之表面。
根據本揭露，便能提供一種可模擬試驗實物元件之發熱的試驗用晶圓及其製造方法。
以下，便參照添附圖式，就實施形態來加以說明。
>經緯及概要> 在檢查晶圓上之元件的檢查裝置中，係要求要能模擬試驗出實際元件之實際發熱狀況。又，亦需要掌握實物元件在實際動作時會成為何種發熱狀態。
因此，雖只要有用以模擬試驗晶圓上之實物元件的發熱狀態之試驗用(治具用)晶圓的話便會非常方便，但卻不存在有此般試驗用晶圓。又，在以與實際元件相同的方式來使用半導體之微影技術，而模擬試驗元件時，會需要數千萬日圓左右的費用及半年左右的製作期間。於是，本發明人便就可模擬試驗實物元件之發熱狀態的試驗用晶圓來加以探討。
由於實物元件之電路係在矽晶圓上藉由薄膜來微細形成，故會有非常快的熱反饋。因此，在以加熱器來模擬試驗此般非常快的熱反饋之情況，加熱器便會要求要為低熱容量且高熱密度者。又，在考量加熱器會接合於矽晶圓來加以使用時，加熱器與矽晶圓之熱阻抗降低便會要求要較低。
以往所使用之加熱器係具有聚醯亞胺加熱器、矽加熱器、雲母加熱器等。聚醯亞胺加熱器、矽加熱器雖可薄至0.2mm左右，但一般而言，加熱器之耐熱溫度係被絕緣材料之耐熱性所限制，聚醯亞胺加熱器係250℃左右，矽加熱器係200℃左右，而難以高密度化。又，雲母加熱器的耐熱溫度雖為600℃左右，但因為其脆度便需要有1mm左右的厚度，會使熱容量增大而難以高速反饋。
於是，進一步探討的結果，便得到了可模擬試驗實物元件之熱反饋性的加熱器為以矽為發熱體之矽加熱器是有效果的結論。
矽本身的比電阻通常為1×103 ٞcm左右，且作為加熱器之發熱密度會較低。然而，摻雜有雜質之矽(單晶矽)係可藉由調整摻雜之材料及摻雜量等來控制到0.2ٞcm左右，絕緣則可藉由氧化表面來加以實現。又，亦可薄至0.2mm左右，且亦可降低與矽晶圓之間的熱阻。因此，矽加熱器係適於模擬試驗實物元件之發熱狀況的加熱器，藉由將此般矽加熱器接合於矽晶圓，便可實現用以模擬試驗實物元件之發熱狀況的試驗用晶圓。
另外，上述矽加熱器係使用金屬(例如不鏽鋼(SUS)、Ni、W等)來作為發熱體，使用矽樹脂(矽氧烷聚合物)來作為絕緣材料。在此點上，便會與使用在矽單晶微量摻雜有雜質者來作為發熱體，使用將矽表面氧化後之氧化矽來作為絕緣材料的本揭露之矽加熱器有所不同。
>試驗用晶圓> 以下，便就試驗用晶圓之實施形態來加以說明。 圖1係顯示一實施形態相關之試驗用晶圓的剖面圖。 試驗用晶圓1係模擬試驗實際晶圓之發熱狀況者，具有為基底之例如300mm的矽晶圓2以及會接合於矽晶圓2表面之矽加熱器3。在矽晶圓2表面的矽加熱器3附近係接合有由二極體所構成之溫度監測元件4。其中，溫度監測元件4非為必要。
矽加熱器3係將形成在實物晶圓之元件進行熱模擬者，且會形成為正方形或矩形。矽加熱器3之大小會對應於對象之元件來適當設定。又，較佳地係以使熱容量盡可能地降低的方式來將厚度較薄地形成為0.1~0.5mm，例如為0.2mm左右。
另外，雖圖1中，係以矽加熱器3之接合位置為矽晶圓2之中央，但不限於此。又，矽加熱器3之個數並不限於1個，例如在就實際晶圓藉由檢查裝置來同時進行2個以上的元件之檢查的情況之模擬試驗中，便會形成有相當於該元件個數之數量的矽加熱器3。
矽之比電阻通常為1×103 ٞcm左右，且作為加熱器之發熱密度會較低。然而，矽可藉由摻雜雜質來控制電阻值。在矽為N型半導體的情況，係摻雜有例如磷、砷，而在P型半導體的情況，則摻雜有例如硼、鎵。在矽之結晶成長階段摻雜有此般雜質，以準備例如電阻管理為例如0.2ٞcm左右的矽晶圓，再如上述般，較薄地加工為正方形或矩形且為0.2mm左右來成為矽加熱器3。矽加熱器3之絕緣係藉由熱氧化處理而在表面形成熱氧化膜來加以實現。
矽加熱器3係形成有電極5，藉由供電於電極5，來使矽加熱器3發熱。矽加熱器3之加熱溫度係可基於構成溫度監測元件4之二極體所測量的溫度來加以控制。另外，6係構成溫度監測元件4之二極體的電極。
矽加熱器3與為基底之矽晶圓2的接合係可藉由研磨接合面，而在藉由硝酸等洗淨後，再貼合接合面彼此而加熱來加以進行。此時之接合亦可加熱至1000℃而藉由擴散接合來加以接合，但較佳地係下述般的方法。
亦即，為透過羥基(-OH)的氫鍵結來進行共價鍵結的方法。例如圖2(a)所示，將矽晶圓2及矽加熱器3的彼此接合面做電漿處理而形成懸鍵(dangling bond)，以在接合面生成較多羥基而使表面活性化。接著，如(b)所示，將矽晶圓2及矽加熱器3貼合，而透過OH基來進行氫鍵結。之後，如(c)所示，藉由以200℃進行加熱處理，來產生脫水反應，最後如(d)所示，藉由共價鍵結來將兩者接合。藉由上述方法，便可以200℃左右之低溫來接合矽晶圓2及矽加熱器3。此時之加熱溫度較佳地係350℃左右。
共價鍵結係非常強的鍵結力，而會與擴散接合的情況同樣地使矽晶圓2與矽加熱器3之界面的熱傳導率會成為與塊體狀態相同的168W/mžK左右，因此，亦可降低矽晶圓2與矽加熱器3之熱抗。藉此，便可實現與在矽晶圓2上形成有元件(電晶體電路等)的情況相同的高速發熱狀態。
此般試驗用晶圓1係可在檢查晶圓之電氣特性的檢查裝置中作為用以驗證載置實物晶圓之可加熱、冷卻的台座裝置之吸熱特性等的治具晶圓來加以使用。
圖3係顯示用於檢查裝置之可加熱、冷卻的台座裝置一範例的剖面圖。如圖3所示，台座裝置係具有：台座10，係載置晶圓；加熱機構20，係具有用以加熱晶圓之複數LED21；以及冷卻機構30，係冷卻台座10。台座10內部係形成有冷媒流道11，台座10上面中央係設置有溫度檢查用之熱電偶12。加熱機構20係具有複數會將複數LED21單元化的LED單元22。複數LED單元22會例如分別對應於晶圓上之複數元件來加以設置。各LED單元22之LED21會從電源(未圖示)來被加以供電。來自電源之輸出會藉由控制部(未圖示)來加以控制。冷卻機構30會讓冷媒(例如水)流通於台座10之冷媒流道11，來進行在台座10上之晶圓所形成元件之吸熱。冷卻機構30係具有：冷卻單元31，係供給冷媒；冷媒配管32，係使冷媒循環；以及流量調整閥33。利用流量調整閥33之冷媒的流量會藉由控制部(未圖示)來加以控制。
隨著IC的高速化、高積集化，便會使形成在晶圓之元件的發熱量增大，在發熱時之元件的吸熱便為重要。圖3之台座裝置中，係在台座10上載置上述試驗用晶圓1，並可藉由矽加熱器3來模擬試驗在試驗時之實物元件的發熱狀況，而能驗證台座10之溫度控制性(吸熱特性等)。藉此，便可正確地進行檢查裝置之裝置評價及試驗評價。
雖此般驗證(模擬試驗)理想上是與實際電路同樣地在矽晶圓上形成電路圖案，而使用其發熱來加以進行，但在製作上會花費龐大的時間及費用。另一方面，從功率密度、反饋速度的觀點看來，在現有的加熱器中，係難以模擬試驗最先進之元件的發熱。針對此，本實施形態相關之試驗用晶圓係可便宜且正確地模擬試驗實物元件之發熱動態。
另外，本實施形態之試驗用晶圓1並不限於用以驗證此般檢查裝置的台座之吸熱特性等的治具晶圓，亦可用於用以掌握在檢查時要對元件施加何種溫度的試驗等。
<具體例>
接著，便就具體例來加以說明。
在將高摻雜矽晶圓(磷摻雜矽晶圓)加工為既定形狀後，製作出形成有電極，且厚度為0.2mm來管理電阻之矽加熱器3(預設電阻值：約8Ω、最大10A電流、50V電壓)。將此般矽加熱器3接合於300mm的矽晶圓2，以製作試驗用晶圓1。又，在300mm之矽晶圓2上形成電極6，並將作為溫度監測元件4之市售二極體接合於其上。
具體如下所示。
矽加熱器3之條件係電壓50V、最大電力600W。首先以300W來計算電阻值。
W=V2/R，R=V2/W=2500/300=8.33Ω。
接著，計算矽加熱器3之電阻管理比電阻ρ(以20mm□，厚度t=0.2mm來計算)。
ρ=R×S/I=8.33×2×0.02/2=0.167Ω．cm。
矽加熱器3係製作出20mm□、30mm□、10mm□者，20mm□、30mm□者如圖4所示，係在300mm之晶圓中央接合有1個，而10mm□者如圖5所示，係在遠離300mm之晶圓中央的位置接合有2個。設置2個10mm□的矽加熱器是因為在元件尺寸變小時，應會在元件檢查時同時檢查2個之故。又，將10mm □的矽加熱器配置在遠離中央的位置是因為可觀察到與設置於台座之熱電偶的位置關係所致之動態之故。為溫度監測元件4之二極體會設置於矽加熱器3之接合位置附近，來測量矽加熱器3之溫度，而用於矽加熱器3之溫度控制。
在此般所製造之試驗用晶圓1中，矽加熱器3會相當於實物晶圓之元件，而顯示與元件相同的熱動態。藉由將此般構成之試驗用晶圓作為檢查裝置之台座的治具晶圓來加以使用，便可以高精度來模擬試驗實物元件之發熱，而可正確地驗證台座之吸熱特性等。
<其他適用>
以上，雖已就實施形態來加以說明，但本次所揭露之實施形態在所有的點上應只為例示而非為限制。上述實施形態係可不超出添附申請專利範圍及其主旨，而以各種形態來進行省略、置換、變更。
例如上述實施形態之具體例中的矽加熱器的形狀、大小、配置位置、數量僅為例示，而可對應於對象之實物晶圓的元件之大小、配置、發熱量以及檢查方法等來適當設定。
1:試驗用晶圓
2:矽晶圓
3:矽加熱器
4:溫度監測元件
5:電極
圖1係顯示一實施形態相關之試驗用晶圓的剖面圖。 圖2係顯示試驗用晶圓之製造方法一範例的概略圖。 圖3係顯示用於檢查裝置之可加熱、冷卻的台座裝置一範例的剖面圖。 圖4係顯示試驗用晶圓之具體例的俯視圖。 圖5係顯示試驗用晶圓之另一具體例的俯視圖。
無
1:試驗晶圓
2:矽晶圓
3:矽加熱器
4:溫度監測元件
5:電極
6:電極

Claims (8)

  1. 一種試驗用晶圓，係模擬試驗晶圓上之元件的發熱之試驗用晶圓，具有：矽晶圓；以及矽加熱器，係接合於該矽晶圓之表面；該矽加熱器係藉由摻雜有雜質來控制比電阻；該矽加熱器之表面係形成有絕緣用氧化膜。
  2. 如申請專利範圍第1項之試驗用晶圓，其係被載置於進行晶圓檢查之檢查裝置的台座，且作為驗證該台座之吸熱特性的治具用晶圓來加以使用。
  3. 如申請專利範圍第1項之試驗用晶圓，其係進一步地具有：溫度監測元件，係接合於該矽晶圓之表面。
  4. 如申請專利範圍第2項之試驗用晶圓，其係進一步地具有：溫度監測元件，係接合於該矽晶圓之表面。
  5. 如申請專利範圍第1至4項中任一項之試驗用晶圓，其中該矽加熱器之厚度係在0.1~0.5mm的範圍。
  6. 如申請專利範圍第1至4項中任一項之試驗用晶圓，其中該矽加熱器係形成有供電用電極。
  7. 如申請專利範圍第5項之試驗用晶圓，其中該矽加熱器係形成有供電用電極。
  8. 一種試驗用晶圓之製造方法，係如申請專利範圍第1至7項中任一項之試驗用晶圓之製造方法，具有： 將矽晶圓與矽加熱器彼此的接合面做電漿處理，來形成懸鍵(dangling bond)，而在接合面生成羥基之工序；將該矽晶圓及該矽加熱器貼合，並透過OH基來進行氫鍵結之工序；以及加熱該矽晶圓及該矽加熱器，而產生脫水反應，並藉由共價鍵結來將該矽晶圓及該矽加熱器接合之工序。
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