TWI820152B - 具有金屬圖案的成形體之製造方法 - Google Patents
具有金屬圖案的成形體之製造方法 Download PDFInfo
- Publication number
- TWI820152B TWI820152B TW108120678A TW108120678A TWI820152B TW I820152 B TWI820152 B TW I820152B TW 108120678 A TW108120678 A TW 108120678A TW 108120678 A TW108120678 A TW 108120678A TW I820152 B TWI820152 B TW I820152B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- conductive metal
- group
- pattern
- mentioned
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 314
- 239000002184 metal Substances 0.000 title claims abstract description 309
- 238000000034 method Methods 0.000 title claims abstract description 123
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 229910052709 silver Inorganic materials 0.000 claims abstract description 113
- 239000004332 silver Substances 0.000 claims abstract description 113
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000002245 particle Substances 0.000 claims abstract description 108
- 230000007261 regionalization Effects 0.000 claims abstract description 62
- 238000005530 etching Methods 0.000 claims abstract description 59
- 239000007788 liquid Substances 0.000 claims abstract description 48
- 238000009713 electroplating Methods 0.000 claims abstract description 30
- 101001109719 Homo sapiens Nucleophosmin Proteins 0.000 claims abstract 6
- 102100022678 Nucleophosmin Human genes 0.000 claims abstract 6
- -1 acetyl acetyl group Chemical group 0.000 claims description 79
- 229920005989 resin Polymers 0.000 claims description 70
- 239000011347 resin Substances 0.000 claims description 70
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 32
- 125000000524 functional group Chemical group 0.000 claims description 30
- 239000002270 dispersing agent Substances 0.000 claims description 22
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 13
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 9
- 125000003700 epoxy group Chemical group 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000004480 active ingredient Substances 0.000 claims description 3
- 125000000468 ketone group Chemical group 0.000 claims 1
- 125000006353 oxyethylene group Chemical group 0.000 claims 1
- 238000007788 roughening Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 292
- 239000006185 dispersion Substances 0.000 description 47
- 150000001875 compounds Chemical class 0.000 description 46
- 238000000576 coating method Methods 0.000 description 45
- 238000007747 plating Methods 0.000 description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 35
- 239000002904 solvent Substances 0.000 description 35
- 229910052802 copper Inorganic materials 0.000 description 34
- 239000010949 copper Substances 0.000 description 34
- 239000000243 solution Substances 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 239000012948 isocyanate Substances 0.000 description 28
- 239000000203 mixture Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 239000011248 coating agent Substances 0.000 description 25
- 238000001035 drying Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 19
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 18
- 150000002513 isocyanates Chemical class 0.000 description 18
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 17
- 239000004734 Polyphenylene sulfide Substances 0.000 description 17
- 229920000069 polyphenylene sulfide Polymers 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 239000002585 base Substances 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 15
- 239000000049 pigment Substances 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 13
- 239000000178 monomer Substances 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 12
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000002981 blocking agent Substances 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 239000005056 polyisocyanate Substances 0.000 description 9
- 229920001228 polyisocyanate Polymers 0.000 description 9
- 239000003755 preservative agent Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 229920000877 Melamine resin Polymers 0.000 description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 239000003431 cross linking reagent Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229920002873 Polyethylenimine Polymers 0.000 description 7
- 125000003277 amino group Chemical group 0.000 description 7
- 125000003118 aryl group Chemical group 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000002923 metal particle Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 238000003618 dip coating Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 235000011054 acetic acid Nutrition 0.000 description 5
- 125000003368 amide group Chemical group 0.000 description 5
- 239000002518 antifoaming agent Substances 0.000 description 5
- 239000012736 aqueous medium Substances 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000000805 composite resin Substances 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 239000011258 core-shell material Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920001515 polyalkylene glycol Polymers 0.000 description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 5
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- HDFRDWFLWVCOGP-UHFFFAOYSA-N carbonothioic O,S-acid Chemical compound OC(S)=O HDFRDWFLWVCOGP-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 229920005906 polyester polyol Polymers 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- 239000004640 Melamine resin Substances 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- SCKXCAADGDQQCS-UHFFFAOYSA-N Performic acid Chemical compound OOC=O SCKXCAADGDQQCS-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 235000006708 antioxidants Nutrition 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000005342 ion exchange Methods 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- 239000003223 protective agent Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical class CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- GVJHHUAWPYXKBD-UHFFFAOYSA-N (±)-α-Tocopherol Chemical compound OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- PTBDIHRZYDMNKB-UHFFFAOYSA-N 2,2-Bis(hydroxymethyl)propionic acid Chemical compound OCC(C)(CO)C(O)=O PTBDIHRZYDMNKB-UHFFFAOYSA-N 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000005058 Isophorone diisocyanate Substances 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- 238000007754 air knife coating Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- MBMBGCFOFBJSGT-KUBAVDMBSA-N all-cis-docosa-4,7,10,13,16,19-hexaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCC(O)=O MBMBGCFOFBJSGT-KUBAVDMBSA-N 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- 238000007765 extrusion coating Methods 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 125000000879 imine group Chemical group 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 2
- 150000003951 lactams Chemical class 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 description 2
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000010137 moulding (plastic) Methods 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 229960002446 octanoic acid Drugs 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000007649 pad printing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 2
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000007761 roller coating Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- HLZKNKRTKFSKGZ-UHFFFAOYSA-N tetradecan-1-ol Chemical compound CCCCCCCCCCCCCCO HLZKNKRTKFSKGZ-UHFFFAOYSA-N 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- FMZUHGYZWYNSOA-VVBFYGJXSA-N (1r)-1-[(4r,4ar,8as)-2,6-diphenyl-4,4a,8,8a-tetrahydro-[1,3]dioxino[5,4-d][1,3]dioxin-4-yl]ethane-1,2-diol Chemical compound C([C@@H]1OC(O[C@@H]([C@@H]1O1)[C@H](O)CO)C=2C=CC=CC=2)OC1C1=CC=CC=C1 FMZUHGYZWYNSOA-VVBFYGJXSA-N 0.000 description 1
- BHQCQFFYRZLCQQ-UHFFFAOYSA-N (3alpha,5alpha,7alpha,12alpha)-3,7,12-trihydroxy-cholan-24-oic acid Natural products OC1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 BHQCQFFYRZLCQQ-UHFFFAOYSA-N 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical class [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- FZENGILVLUJGJX-IHWYPQMZSA-N (Z)-acetaldehyde oxime Chemical compound C\C=N/O FZENGILVLUJGJX-IHWYPQMZSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- NNOZGCICXAYKLW-UHFFFAOYSA-N 1,2-bis(2-isocyanatopropan-2-yl)benzene Chemical compound O=C=NC(C)(C)C1=CC=CC=C1C(C)(C)N=C=O NNOZGCICXAYKLW-UHFFFAOYSA-N 0.000 description 1
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- ZXHZWRZAWJVPIC-UHFFFAOYSA-N 1,2-diisocyanatonaphthalene Chemical class C1=CC=CC2=C(N=C=O)C(N=C=O)=CC=C21 ZXHZWRZAWJVPIC-UHFFFAOYSA-N 0.000 description 1
- ODIRBFFBCSTPTO-UHFFFAOYSA-N 1,3-selenazole Chemical compound C1=C[se]C=N1 ODIRBFFBCSTPTO-UHFFFAOYSA-N 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- MXVMODFDROLTFD-UHFFFAOYSA-N 2-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCOCCOCCOCCOCCO MXVMODFDROLTFD-UHFFFAOYSA-N 0.000 description 1
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 125000003504 2-oxazolinyl group Chemical class O1C(=NCC1)* 0.000 description 1
- WYKHSBAVLOPISI-UHFFFAOYSA-N 2-phenyl-1,3-thiazole Chemical compound C1=CSC(C=2C=CC=CC=2)=N1 WYKHSBAVLOPISI-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical compound CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- YICAEXQYKBMDNH-UHFFFAOYSA-N 3-[bis(3-hydroxypropyl)phosphanyl]propan-1-ol Chemical compound OCCCP(CCCO)CCCO YICAEXQYKBMDNH-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- GUUULVAMQJLDSY-UHFFFAOYSA-N 4,5-dihydro-1,2-thiazole Chemical compound C1CC=NS1 GUUULVAMQJLDSY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- XKVUYEYANWFIJX-UHFFFAOYSA-N 5-methyl-1h-pyrazole Chemical compound CC1=CC=NN1 XKVUYEYANWFIJX-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- PPTJNKDHIQSKSR-UHFFFAOYSA-N C(CCC)ON(C1=NC(=NC(=N1)N)N(CO)OCCCC)OCCCC Chemical compound C(CCC)ON(C1=NC(=NC(=N1)N)N(CO)OCCCC)OCCCC PPTJNKDHIQSKSR-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004380 Cholic acid Substances 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 description 1
- HTIRHQRTDBPHNZ-UHFFFAOYSA-N Dibutyl sulfide Chemical compound CCCCSCCCC HTIRHQRTDBPHNZ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- VTAJIXDZFCRWBR-UHFFFAOYSA-N Licoricesaponin B2 Natural products C1C(C2C(C3(CCC4(C)CCC(C)(CC4C3=CC2)C(O)=O)C)(C)CC2)(C)C2C(C)(C)CC1OC1OC(C(O)=O)C(O)C(O)C1OC1OC(C(O)=O)C(O)C(O)C1O VTAJIXDZFCRWBR-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FZERHIULMFGESH-UHFFFAOYSA-N N-phenylacetamide Chemical compound CC(=O)NC1=CC=CC=C1 FZERHIULMFGESH-UHFFFAOYSA-N 0.000 description 1
- DNNXXFFLRWCPBC-UHFFFAOYSA-N N=C=O.N=C=O.C1=CC=CC=C1 Chemical class N=C=O.N=C=O.C1=CC=CC=C1 DNNXXFFLRWCPBC-UHFFFAOYSA-N 0.000 description 1
- OMRDSWJXRLDPBB-UHFFFAOYSA-N N=C=O.N=C=O.C1CCCCC1 Chemical compound N=C=O.N=C=O.C1CCCCC1 OMRDSWJXRLDPBB-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229930003268 Vitamin C Natural products 0.000 description 1
- 229930003427 Vitamin E Natural products 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- MBHRHUJRKGNOKX-UHFFFAOYSA-N [(4,6-diamino-1,3,5-triazin-2-yl)amino]methanol Chemical compound NC1=NC(N)=NC(NCO)=N1 MBHRHUJRKGNOKX-UHFFFAOYSA-N 0.000 description 1
- JWEIEUSIPQTNHI-UHFFFAOYSA-N [[4-amino-6-(dimethoxyamino)-1,3,5-triazin-2-yl]-methoxyamino]methanol Chemical compound CON(CO)C1=NC(N)=NC(N(OC)OC)=N1 JWEIEUSIPQTNHI-UHFFFAOYSA-N 0.000 description 1
- BJSBGAIKEORPFG-UHFFFAOYSA-N [[6-amino-1,2,3,4-tetramethoxy-4-(methoxyamino)-1,3,5-triazin-2-yl]-methoxyamino]methanol Chemical compound CONC1(N(C(N(C(=N1)N)OC)(N(CO)OC)OC)OC)OC BJSBGAIKEORPFG-UHFFFAOYSA-N 0.000 description 1
- KXBFLNPZHXDQLV-UHFFFAOYSA-N [cyclohexyl(diisocyanato)methyl]cyclohexane Chemical compound C1CCCCC1C(N=C=O)(N=C=O)C1CCCCC1 KXBFLNPZHXDQLV-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 229960001413 acetanilide Drugs 0.000 description 1
- 125000002339 acetoacetyl group Chemical group O=C([*])C([H])([H])C(=O)C([H])([H])[H] 0.000 description 1
- PXAJQJMDEXJWFB-UHFFFAOYSA-N acetone oxime Chemical compound CC(C)=NO PXAJQJMDEXJWFB-UHFFFAOYSA-N 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 229960004308 acetylcysteine Drugs 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- JAZBEHYOTPTENJ-JLNKQSITSA-N all-cis-5,8,11,14,17-icosapentaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O JAZBEHYOTPTENJ-JLNKQSITSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000001541 aziridines Chemical class 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- HIFVAOIJYDXIJG-UHFFFAOYSA-N benzylbenzene;isocyanic acid Chemical class N=C=O.N=C=O.C=1C=CC=CC=1CC1=CC=CC=C1 HIFVAOIJYDXIJG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 235000019416 cholic acid Nutrition 0.000 description 1
- 229960002471 cholic acid Drugs 0.000 description 1
- 125000003716 cholic acid group Chemical group 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- KXGVEGMKQFWNSR-UHFFFAOYSA-N deoxycholic acid Natural products C1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 KXGVEGMKQFWNSR-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229940087101 dibenzylidene sorbitol Drugs 0.000 description 1
- JGFBRKRYDCGYKD-UHFFFAOYSA-N dibutyl(oxo)tin Chemical compound CCCC[Sn](=O)CCCC JGFBRKRYDCGYKD-UHFFFAOYSA-N 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- 235000019329 dioctyl sodium sulphosuccinate Nutrition 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000004662 dithiols Chemical class 0.000 description 1
- 235000020669 docosahexaenoic acid Nutrition 0.000 description 1
- 229940090949 docosahexaenoic acid Drugs 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000020673 eicosapentaenoic acid Nutrition 0.000 description 1
- 229960005135 eicosapentaenoic acid Drugs 0.000 description 1
- JAZBEHYOTPTENJ-UHFFFAOYSA-N eicosapentaenoic acid Natural products CCC=CCC=CCC=CCC=CCC=CCCCC(O)=O JAZBEHYOTPTENJ-UHFFFAOYSA-N 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000005670 ethenylalkyl group Chemical group 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- WIGCFUFOHFEKBI-UHFFFAOYSA-N gamma-tocopherol Natural products CC(C)CCCC(C)CCCC(C)CCCC1CCC2C(C)C(O)C(C)C(C)C2O1 WIGCFUFOHFEKBI-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 description 1
- LPLVUJXQOOQHMX-UHFFFAOYSA-N glycyrrhetinic acid glycoside Natural products C1CC(C2C(C3(CCC4(C)CCC(C)(CC4C3=CC2=O)C(O)=O)C)(C)CC2)(C)C2C(C)(C)C1OC1OC(C(O)=O)C(O)C(O)C1OC1OC(C(O)=O)C(O)C(O)C1O LPLVUJXQOOQHMX-UHFFFAOYSA-N 0.000 description 1
- 239000001685 glycyrrhizic acid Substances 0.000 description 1
- 229960004949 glycyrrhizic acid Drugs 0.000 description 1
- UYRUBYNTXSDKQT-UHFFFAOYSA-N glycyrrhizic acid Natural products CC1(C)C(CCC2(C)C1CCC3(C)C2C(=O)C=C4C5CC(C)(CCC5(C)CCC34C)C(=O)O)OC6OC(C(O)C(O)C6OC7OC(O)C(O)C(O)C7C(=O)O)C(=O)O UYRUBYNTXSDKQT-UHFFFAOYSA-N 0.000 description 1
- 235000019410 glycyrrhizin Nutrition 0.000 description 1
- LPLVUJXQOOQHMX-QWBHMCJMSA-N glycyrrhizinic acid Chemical compound O([C@@H]1[C@@H](O)[C@H](O)[C@H](O[C@@H]1O[C@@H]1C([C@H]2[C@]([C@@H]3[C@@]([C@@]4(CC[C@@]5(C)CC[C@@](C)(C[C@H]5C4=CC3=O)C(O)=O)C)(C)CC2)(C)CC1)(C)C)C(O)=O)[C@@H]1O[C@H](C(O)=O)[C@@H](O)[C@H](O)[C@H]1O LPLVUJXQOOQHMX-QWBHMCJMSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- AYLRODJJLADBOB-QMMMGPOBSA-N methyl (2s)-2,6-diisocyanatohexanoate Chemical compound COC(=O)[C@@H](N=C=O)CCCCN=C=O AYLRODJJLADBOB-QMMMGPOBSA-N 0.000 description 1
- XVTQAXXMUNXFMU-UHFFFAOYSA-N methyl 2-(3-oxo-2-pyridin-2-yl-1h-pyrazol-5-yl)acetate Chemical compound N1C(CC(=O)OC)=CC(=O)N1C1=CC=CC=N1 XVTQAXXMUNXFMU-UHFFFAOYSA-N 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- IONSZLINWCGRRI-UHFFFAOYSA-N n'-hydroxymethanimidamide Chemical compound NC=NO IONSZLINWCGRRI-UHFFFAOYSA-N 0.000 description 1
- ZKALVNREMFLWAN-UHFFFAOYSA-N n-(4-methylpentan-2-ylidene)hydroxylamine Chemical compound CC(C)CC(C)=NO ZKALVNREMFLWAN-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical compound CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 description 1
- GKRZNOGGALENQJ-UHFFFAOYSA-N n-carbamoylacetamide Chemical compound CC(=O)NC(N)=O GKRZNOGGALENQJ-UHFFFAOYSA-N 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229960002969 oleic acid Drugs 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 229940055577 oleyl alcohol Drugs 0.000 description 1
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229940116315 oxalic acid Drugs 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002530 phenolic antioxidant Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000333 poly(propyleneimine) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Chemical class 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 150000003141 primary amines Chemical group 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- YBBJKCMMCRQZMA-UHFFFAOYSA-N pyrithione Chemical compound ON1C=CC=CC1=S YBBJKCMMCRQZMA-UHFFFAOYSA-N 0.000 description 1
- 229960002026 pyrithione Drugs 0.000 description 1
- 229940107700 pyruvic acid Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 229960004274 stearic acid Drugs 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 229920006174 synthetic rubber latex Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M thiocyanate group Chemical group [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 1
- 150000004764 thiosulfuric acid derivatives Chemical class 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000011718 vitamin C Substances 0.000 description 1
- 235000019154 vitamin C Nutrition 0.000 description 1
- 239000011709 vitamin E Substances 0.000 description 1
- 235000019165 vitamin E Nutrition 0.000 description 1
- 229940046009 vitamin E Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/08—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09363—Conductive planes wherein only contours around conductors are removed for insulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Plasma & Fusion (AREA)
- Thermal Sciences (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laminated Bodies (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
本發明提供一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其特徵在於具有以下步驟:步驟1,其於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。該製造方法可於不將成形體表面粗化之情況下形成密接性較高之金屬圖案,又,無需真空裝置或特殊裝置,而能夠製造表面具有金屬圖案之成形體。
Description
本發明係關於一種於平面或三維立體之絕緣性成形體上具有金屬圖案的成形體之製造方法。
先前,作為於絕緣性成形體上形成金屬圖案之方法,例如已知有藉由使用鍍覆析出性不同之兩種材料進行二色成形而於表面製作圖案形成區域與非圖案形成區域,再利用鍍覆析出性之差異來形成金屬圖案之方法,該方法需2次之成形步驟,因此不僅工序複雜、成本高昂,且難以藉由成形加工來表現微小圖案,另外有可能產生鍍覆液滲透、殘留於兩種樹脂材料界面等問題。
另一方面,作為不進行二色成形之方法,揭示有利用形成於成形體整面之鍍覆晶種層之方法(例如參照專利文獻1)。於該方法中,作為成形基材,使用由聚醯亞胺、ABS、聚醚醯亞胺、液晶聚合物、氧化鋁陶瓷等電絕緣材料所形成者,藉由利用鉻酸液、氫氧化鉀水溶液、磷酸液等對表面進行處理而實施賦予凹凸之粗面化處理後,於其上形成電解鍍覆用之晶種層。對所形成之晶種層照射雷射光去除待成為配線之金屬圖案輪廓部分,而將晶種層分離為導電部與非導電部後,僅對配線圖案部進行電解鍍銅而使配線圖案部之銅膜厚度較非配線部之銅膜厚度厚。繼而進行軟蝕刻,藉此可於成形品之表面形成銅之配線圖案。
然而,關於專利文獻1之技術,由於成形體表面經過粗化處理,故而難以形成微細圖案,難以實現微間距化,又,在用於傳送高頻訊號之配線用途時存在產生傳送損耗等課題。進而,受到成形體表面粗化之影響,鍍膜表面亦存在成為無光澤的粗面之傾向。
又,於專利文獻1中亦揭示有如下方法:將成形體表面之粗化處理變更為非化學溶液處理之電漿處理,進行活化,藉此實施對表面賦予凹凸之粗面化處理,於整面濺鍍銅而形成鍍覆晶種層。於該方法中採用濺鍍法形成電解鍍覆之晶種層,因此存在如下課題:需要昂貴之真空裝置,生產效率較低,形成濺鍍膜時承受高溫負荷而難以應用於耐熱性較低之基材,難以獲得密接性較高之金屬膜等。
又,作為不將成形體表面粗化而提高密接性、且不使用真空裝置之方法,揭示有使用於表面部分散有含金屬元素之微粒子之塑膠成形體之方法(例如參照專利文獻2)。作為獲得於表面部分散有含金屬元素之微粒子之塑膠成形體之方法,揭示有如下方法:將塑膠成形體浸透於醇或還原劑,進而使之與包含金屬錯合物之高壓二氧化碳接觸;使包含金屬錯合物之高壓二氧化碳溶解於用以射出成形塑膠成形體之塑化筒內之熔融樹脂,進而將溶解後之熔融樹脂向模具射出而成形塑膠成形體。於該方法中在塑膠成形體之表面形成含金屬元素之微粒子,因此存在如下課題:需要利用高壓二氧化碳之特殊裝置,又,使塑膠成形體之表面部含浸金屬元素之操作導致表面與主體物性不同等。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開平7-66533號公報
[專利文獻2]日本特開2010-80495號公報
本發明所欲解決之課題提供一種可於不將成形體表面粗化之情況下形成密接性較高之金屬圖案,又,無需真空裝置或特殊裝置,而能夠製造表面具有金屬圖案之成形體的成形體之製造方法。
本發明者等人為了解決上述課題,經過潛心研究,結果發現,於成形體表面形成含有銀粒子之導電性金屬層,藉由將上述導電性金屬層之一部分去除而分離為圖案形成區域與非圖案形成區域,利用電解鍍覆法於圖案形成區域上形成金屬層後,利用蝕刻液去除非圖案區域之金屬層,藉此可於不將成形體表面粗化之情況下形成密接性較高之金屬圖案,又,無需真空裝置或特殊裝置,而能夠製造表面具有金屬圖案之成形體,從而完成本發明。
即,本發明提供一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其特徵在於具有以下步驟:步驟1,其於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。
又,本發明提供一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其特徵在於具有以下步驟:步驟1',其於絕緣性成形體(A)上形成底塗層(B)後,於底塗層(B)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導
電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。
藉由本發明之具有金屬圖案的成形體之製造方法,無需進行複雜之二色成形或使用光阻劑之暗室內之曝光-顯影等繁雜作業,且無需使用昂貴之真空裝置,而能夠製造於其表面具有密接性較高、表面平滑之金屬圖案的具有平面或三維立體形狀之成形體。因此,藉由本發明之具有金屬圖案的成形體之製造方法,能夠以低成本提供各種形狀、尺寸之具有高密度、高性能之印刷配線板、立體配線之成形電路零件(MID,Molded Interconnect Device),故於印刷配線領域相關產業上之利用性較高。又,本發明之具有金屬圖案的成形體之製造方法可用於在基材表面具有經圖案化之金屬層之各種電子構件,例如亦可應用於連接器、電磁波屏蔽、RFID(Radio Frequency Identification)等之天線等。
進而,藉由本發明之具有金屬圖案的成形體之製造方法所製造之具有金屬圖案之成形體不僅可用於電子構件,亦可用於在各種形狀、尺寸之成形體上具有經圖案化之金屬層之功能零件、裝飾鍍覆等用途。
A:絕緣性成形體
M1:導電性金屬層
PM1:圖案形成區域之導電性金屬層
NPM1:非圖案形成區域之導電性金屬層
PM2:圖案金屬層
圖1係於絕緣性成形體上形成有導電性金屬層者之模式圖。
圖2係將導電性金屬層分離為圖案形成區域之導電性金屬層與非圖案形成區域之導電性金屬層者之模式圖。
圖3係對圖案形成區域之導電性金屬層實施電解鍍覆而形成圖案金屬層者之模式圖。
圖4係藉由蝕刻液去除非圖案形成區域之導電性金屬層者之模式圖。
本發明係一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其特徵在於具有以下步驟:步驟1,其於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。
又,本發明之更佳態樣係一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其特徵在於具有以下步驟:步驟1',其於絕緣性成形體(A)上形成底塗層(B)後,於底塗層(B)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。
作為本發明之步驟1或步驟1'中使用之上述絕緣性成形體(A)之材料,例如可列舉:聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚醯胺樹脂、聚對苯二甲酸乙二酯樹脂、聚對苯二甲酸丁二酯樹脂、聚萘二甲酸乙二酯樹脂、聚
碳酸酯樹脂、丙烯腈-丁二烯-苯乙烯(ABS)樹脂、聚芳酯樹脂、聚縮醛樹脂、聚(甲基)丙烯酸甲酯等丙烯酸樹脂、聚偏二氟乙烯樹脂、聚四氟乙烯樹脂、聚氯乙烯樹脂、聚偏二氯乙烯樹脂、與丙烯酸樹脂接枝共聚之氯乙烯樹脂、聚乙烯醇樹脂、聚乙烯樹脂、聚丙烯樹脂、胺酯樹脂(urethane resin)、環烯烴樹脂、聚苯乙烯、液晶聚合物(LCP)、聚醚醚酮(PEEK)樹脂、聚苯硫醚(PPS)、聚苯碸(PPSU)、纖維素奈米纖維、矽、碳化矽、氮化鎵、藍寶石、陶瓷、玻璃、類鑽碳(DLC)、氧化鋁等。
又,作為上述絕緣性成形體(A),亦可較佳地使用含有熱硬化性樹脂及無機填充材之樹脂基材。作為上述熱硬化性樹脂,例如可列舉:環氧樹脂、酚樹脂、不飽和醯亞胺樹脂、氰酸酯樹脂、異氰酸酯樹脂、苯并樹脂、氧環丁烷樹脂、胺基樹脂、不飽和聚酯樹脂、烯丙基樹脂、二環戊二烯樹脂、聚矽氧樹脂、三樹脂、三聚氰胺樹脂等。另一方面,作為上述無機填充材,例如可列舉:二氧化矽(silica)、氧化鋁、滑石、雲母、氫氧化鋁、氫氧化鎂、碳酸鈣、硼酸鋁、硼矽酸玻璃等。該等熱硬化性樹脂與無機填充劑分別可使用一種或將兩種以上併用。
作為上述絕緣性成形體(A)之形態,可採用撓性材、剛性材、剛性-撓性材之任意者,其形狀可為平面亦可為三維立體形狀。更具體而言,上述絕緣性成形體(A)可使用成形為三維立體形狀、膜狀、片狀、板狀之市售材料,亦可使用由上述樹脂之溶液、熔融液、分散液成形為任意形狀而獲得之材料。又,上述絕緣性成形體(A)亦可為於金屬等導電性材料之上形成有上述樹脂材料之基材。
又,作為上述絕緣性成形體(A)之形態,可具有貫通平面狀基材(膜、片、板等)之兩面之貫通孔,亦可具有如下結構:基材為積層體,且於外層具有貫通孔,而作為積層體整體具有非貫通孔,具有到達內層部之
孔。於上述絕緣性成形體(A)具有貫通孔之情形,藉由經過下述之本發明之印刷配線板之製造步驟,能夠使貫通孔之兩面電性連接。又,於上述絕緣性成形體(A)具有為積層體且具有非貫通孔、具有到達內層部之孔之結構之情形,藉由經過本發明之印刷配線板之製造步驟,能夠使外層與內層之導電層電性連接。
又,於本發明之步驟2之使用電磁波將上述導電性金屬層(M1)之一部分去除之情形,可於無損上述絕緣性成形體(A)在目標使用環境中之耐熱性、機械強度、絕緣特性等之範圍內,使上述絕緣性成形體(A)中含有吸收該電磁波之石墨或碳、花青化合物、酞花青化合物、二硫醇金屬錯合物、萘醌化合物、二亞銨化合物、偶氮化合物等吸收光之顏料或色素作為光吸收劑。該等顏料或色素根據使用之該電磁波之波長而適當選擇即可。又,該等顏料或色素可使用一種或將兩種以上併用。進而,於上述絕緣性成形體(A)之材料使用市售之樹脂材料之情形,亦可使用作為著色級市售之著色樹脂材料。若使上述絕緣性成形體(A)中含有吸收該電磁波之顏料或色素,則該電磁波於上述絕緣性成形體(A)之表面被吸收,本發明之步驟2中容易將導電性金屬層(M1)去除,因此較佳。
本發明之具有金屬圖案的成形體之製造方法之步驟1係於上述絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1)之步驟。該導電性金屬層(M1)成為下述步驟3中藉由電解鍍覆形成圖案金屬層(PM2)時之鍍覆基底層。上述導電性金屬層(M1)為含有銀粒子之金屬層,亦可含有銀粒子以外之金屬粒子。作為銀粒子以外之金屬粒子,例如可列舉:金、鉑、鈀、釕、錫、銅、鎳、鐵、鈷、鈦、銦、銥等金屬粒子。於使用該等金屬粒子之情形,可與銀粒子一起使用1種以上。於本發明中,關於將銀粒子作為必需金屬粒子之原因,可列舉:價格相對低廉,作為下述電解鍍覆步驟中之導電性金屬
層電阻值充分低,於大氣下保存時表面亦不易氧化等。
於含有銀粒子以外之金屬粒子之情形,關於銀粒子以外之金屬粒子之比率,只要能夠形成上述導電性金屬層(M1)、且能夠無問題地實施下述步驟3中之電解鍍覆,則並無特別限制,就可進一步提高下述步驟4中之蝕刻去除性之方面而言,相對於銀粒子100質量份,較佳為5質量份以下,更佳為2質量份以下。
作為形成上述導電性金屬層(M1)之方法,例如可列舉於上述絕緣性成形體(A)上塗佈銀粒子分散液之方法。上述銀粒子分散液之塗佈方法只要能夠良好地形成導電性金屬層(M1)則並無特別限制,根據使用之絕緣性成形體(A)之形狀、尺寸、剛柔程度等適當選擇各種塗佈方法即可。作為具體之塗佈方法,例如可列舉:凹版法、膠版法、柔版法、移印法、凹版膠版法、凸版法、凸版反轉法、網版法、微觸法、逆輥法、氣動括塗法、刮刀塗佈法、氣刀塗佈法、擠壓式塗佈法、含浸式塗佈法、轉印輥塗佈法、接觸式塗佈法、塗鑄法、噴塗法、噴墨法、模嘴塗佈法、旋轉塗佈法、棒式塗佈法、浸漬塗佈法等。
又,作為於膜狀、片狀、板狀之上述絕緣性成形體(A)之兩面塗佈銀粒子分散液之方法,只要能夠良好地形成導電性金屬層(M1)則並無特別限制,適當選擇上述例示之塗佈方法即可。此時,可於上述絕緣性成形體(A)之兩面同時形成導電性金屬層(M1),亦可於上述絕緣性成形體(A)之一面形成導電性金屬層(M1)後再於另一面形成。進而,於上述絕緣性成形體(A)為立體形狀之成形體之情形,根據成形體之尺寸、形狀而適當選擇上述例示之塗佈方法即可,宜為噴塗法、噴墨法、浸漬塗佈法等。
基於提高銀粒子分散液之塗佈性、提高步驟3中形成之金屬圖案層(PM2)對基材之密接性之目的,上述絕緣性成形體(A)可於塗佈銀粒子
分散液前進行表面處理。關於上述絕緣性成形體(A)之表面處理方法,只要不會因表面之粗糙度變大而使微間距圖案形成性存在問題或因粗面而產生訊號傳送損耗,則並無特別限制,適當選擇各種方法即可。作為此種表面處理方法,例如可列舉:UV處理、氣相臭氧處理、液相臭氧處理、電暈處理、電漿處理等。該等表面處理方法可藉由一種方法進行,亦可併用兩種以上之方法。
於上述絕緣性成形體(A)上塗佈上述銀粒子分散液後,藉由對塗佈膜進行乾燥、焙燒而使銀粒子分散液所含之溶劑揮發,銀粒子彼此密接、接合,藉此於上述絕緣性成形體(A)上形成導電性金屬層(M1)。此處,所謂乾燥主要指使上述銀粒子之分散液中之溶劑揮發之製程,所謂焙燒主要指使銀粒子彼此接合而表現出導電性之製程。
上述乾燥與焙燒可同時進行,亦可暫且先將塗佈膜乾燥,於使用前視需要進行焙燒。乾燥之溫度及時間根據下述之上述銀粒子分散液中使用之溶劑之種類而適當選擇即可,較佳為溫度為20℃~250℃之範圍,時間為1~200分鐘之範圍。又,焙燒之溫度及時間根據所需之導電性而適當選擇即可,較佳為溫度為80~350℃之範圍,時間為1~200分鐘之範圍。又,為了於上述絕緣性成形體(A)上獲得密接性優異之導電性金屬層(M1),更佳為將上述焙燒之溫度設為80~250℃之範圍。
上述乾燥、焙燒時可進行送風,亦可不特別進行送風。又,乾燥、焙燒可於大氣中進行,亦可於氮氣、氬氣等不活性氣體之置換環境下、或氣流下進行,亦可於真空下進行。
於上述絕緣性成形體(A)為單片之膜、片、板、或三維立體形狀之成形體之情形,除了在塗佈場所自然乾燥以外,可於送風、定溫乾燥器等乾燥器內進行上述乾燥、焙燒。又,於上述絕緣性成形體(A)為卷狀膜、卷狀片等卷狀材之情形,可藉由在塗佈步驟後使卷狀材於設置之非加熱或加熱
空間內連續地移動而進行乾燥、焙燒。作為此時之乾燥、焙燒之加熱方法,例如可列舉使用烘箱、熱風式乾燥爐、紅外線乾燥爐、雷射照射、微波、光照射(閃光照射裝置)等之方法。該等加熱方法可使用一種,亦可將兩種以上併用。
上述導電性金屬層(M1)較佳為於層中以80~99.9質量%之範圍含有銀粒子且以0.1~20質量%之範圍含有下述分散劑成分。
又,於使用電磁波將本發明之步驟2之上述導電性金屬層(M1)之一部分去除之情形,基於提高其去除效率之目的,可於能夠形成上述導電性金屬層(M1),能夠無問題地實施下述步驟3中之電解鍍覆,能夠確保步驟4中之蝕刻去除性之範圍內,使上述導電性金屬層(M1)中含有吸收該電磁波之石墨或碳、花青化合物、酞花青化合物、二硫醇金屬錯合物、萘醌化合物、二亞銨化合物、偶氮化合物等吸收光之顏料或色素作為光吸收劑。該等顏料或色素根據使用之該電磁波之波長而適當選擇即可。又,該等顏料或色素可使用一種,亦可將兩種以上併用。
關於上述導電性金屬層(M1)之厚度,就可進一步降低電阻值、可製成下述步驟3中之更優異之鍍覆基底層之方面而言,較佳為50~500nm之範圍。進而,就可進一步提高步驟4之去除步驟中之去除性之方面而言,更佳為50~200nm之範圍。
就可容易地實施下述步驟3之電解鍍覆之方面而言,上述導電性金屬層(M1)較佳為銀粒子彼此密接、接合而導電性較高者。又,藉由本發明之步驟2所形成之圖案形成區域之導電性金屬層(PM1)亦可為銀粒子間之空隙經構成上述圖案金屬層(PM2)之鍍覆金屬填充者。若銀粒子間之空隙被鍍覆金屬填充,則於下述步驟4之藉由蝕刻液去除非圖案形成區域之導電性金屬層(NPM1)之步驟中,藉由鍍覆金屬之存在而抑制圖案金屬層(PM2)下之
導電性金屬層(PM1)之蝕刻,金屬圖案形成部不易發生底切(undercut),因此較佳。
用於形成上述導電性金屬層(M1)之銀粒子分散液係於溶劑中分散有銀粒子者。作為上述銀粒子之形狀,只要良好地形成導電性金屬層(M1),則並無特別限制,可使用球狀、透鏡狀、多面體狀、平板狀、棒狀、線狀等各種形狀之銀粒子。該等銀粒子可使用單一形狀之1種,亦可將不同形狀之2種以上併用。
於上述銀粒子之形狀為球狀或多面體狀之情形,較佳為其平均粒徑為1~20,000nm之範圍者。又,於形成微細之電路圖案之情形,就導電性金屬層(M1)之均質性進一步提高,下述步驟4中之利用蝕刻液之去除性亦可進一步提高之方面而言,更佳為其平均粒徑為1~200nm之範圍者,進而較佳為1~50nm之範圍者。再者,關於奈米尺寸之粒子之「平均粒徑」係利用分散良溶劑稀釋上述銀粒子,藉由動態光散射法所測得之體積平均值。該測定可使用Microtrac公司製造之「Nanotrac UPA-150」。
另一方面,於銀粒子具有透鏡狀、棒狀、線狀等形狀之情形,較佳為其短徑為1~200nm之範圍者,更佳為2~100nm之範圍者,進而較佳為5~50nm之範圍者。
上述銀粒子係以銀作為主成分,但只要不會因上述導電性金屬層(A)之電阻值增加而阻礙步驟3中之電解鍍覆,或不會對步驟4中之蝕刻液對上述導電性金屬層(A)之去除性產生損害,則亦可將一部分置換為其他金屬,或者可混合銀以外之金屬成分。
作為置換或混合之金屬,可列舉選自由金、鉑、鈀、釕、錫、銅、鎳、鐵、鈷、鈦、銦及銥所組成之群中之1種以上之金屬元素。
置換或混合之金屬之比率較佳為於上述銀粒子中為5質量%以
下,就上述導電性金屬層(A)之電阻值、利用蝕刻液之去除性之觀點而言,更佳為2質量%以下。
用於形成上述導電性金屬層(M1)之銀粒子分散液係於各種溶劑中分散有銀粒子者,該分散液中之銀粒子之粒徑分佈可為粒徑統一之單分散,又,亦可為上述平均粒徑範圍內之粒子之混合物。
作為上述銀粒子之分散液中使用之溶劑,可使用水性介質或有機溶劑。作為上述水性介質,例如可列舉:蒸餾水、離子交換水、純水、超純水等。又,作為上述有機溶劑,可列舉:醇化合物、醚化合物、酯化合物、酮化合物等。
作為上述醇溶劑或醚溶劑,例如可列舉:甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第二丁醇、第三丁醇、戊醇、己醇、辛醇、壬醇、癸醇、十一醇、十二醇、十三醇、十四醇、十五醇、硬脂醇、烯丙醇、環己醇、萜品醇、松油醇、二氫松油醇、2-乙基-1,3-己二醇、乙二醇、二乙二醇、三乙二醇、聚乙二醇、丙二醇、二丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2,3-丁二醇、甘油、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、二乙二醇單乙醚、二乙二醇單甲醚、二乙二醇單丁醚、四乙二醇單丁醚、丙二醇單甲醚、二丙二醇單甲醚、三丙二醇單甲醚、丙二醇單丙醚、二丙二醇單丙醚、丙二醇單丁醚、二丙二醇單丁醚、三丙二醇單丁醚等。
作為上述酮溶劑,例如可列舉:丙酮、環己酮、甲基乙基酮等。又,作為上述酯溶劑,例如可列舉:乙酸乙酯、乙酸丁酯、3-甲氧基丁基乙酸酯、3-甲氧基-3-甲基-丁基乙酸酯等。進而,作為其他有機溶劑,可列舉:甲苯等烴溶劑、尤其是碳原子數8以上之烴溶劑。
作為上述碳原子數8以上之烴溶劑,例如可列舉:辛烷、壬烷、癸烷、十二烷、十三烷、十四烷、環辛烷、二甲苯、對稱三甲苯、乙基苯、十
二烷基苯、萘滿、三甲基苯環己烷等非極性溶劑,視需要可與其他溶劑組合使用。進而,亦可併用作為混合溶劑之礦油精、溶劑石油腦等溶劑。
只要使銀粒子穩定地分散,於上述絕緣性成形體(A)上或下述形成於上述絕緣性成形體(A)上之底塗層(B)上良好地形成導電性金屬層(M1),上述溶劑並無特別限制。又,上述溶劑可使用一種或將兩種以上併用。
上述銀粒子分散液中之銀粒子之含有率係以成為具有對應於上述塗佈方法之最佳塗佈適應性的黏度之方式調整,較佳為0.5~90質量%之範圍,更佳為1~60質量%之範圍,進而較佳為2~10質量%之範圍。
上述銀粒子分散液較佳為上述銀粒子於上述各種溶劑中長期保持分散穩定性而無凝集、融合、沈澱,較佳為含有用以使銀粒子分散於上述各種溶劑中之分散劑。作為此種分散劑,較佳為具有與銀粒子配位之官能基之分散劑,例如可列舉具有羧基、胺基、氰基、乙醯乙醯基、含磷原子之基、硫醇基、硫氰酸基、甘胺酸基等官能基之分散劑。
作為上述分散劑,可使用市售或自行合成之低分子量或高分子量之分散劑,根據使銀粒子分散之溶劑或供塗佈銀粒子分散液之上述絕緣性成形體(A)之種類等、目的而適當選擇即可。例如適當使用十二硫醇、1-辛硫醇、三苯膦、十二烷基胺、聚乙二醇、聚乙烯基吡咯啶酮、聚伸乙基亞胺、聚乙烯基吡咯啶酮;肉豆蔻酸、辛酸、硬脂酸等脂肪酸;膽酸、甘草酸、松脂酸等具有羧基之多環式烴化合物等。此處,於下述底塗層(B)上形成導電性金屬層(M1)之情形,就該等兩層之密接性良好之方面而言,較佳為使用具有能夠與下述底塗層(B)使用之樹脂所具有之反應性官能基[X]形成鍵之反應性官能基[Y]的化合物。
作為具有反應性官能基[Y]之化合物,例如可列舉:具有胺基、
醯胺基、烷醇基醯胺基、羧基、無水羧基、羰基、乙醯乙醯基、環氧基、脂環環氧基、氧環丁烷環、乙烯基、烯丙基、(甲基)丙烯醯基、(封端化)異氰酸酯基、(烷氧基)矽烷基等之化合物、倍半矽氧烷化合物等。尤其就可進一步提高底塗層(B)與導電性金屬層(M1)之密接性之方面而言,上述反應性官能基[Y]較佳為含鹼性氮原子之基。作為上述含鹼性氮原子之基,例如可列舉:亞胺基、一級胺基、二級胺基等。
分散劑1分子中可存在一個或複數個上述含鹼性氮原子之基。藉由使分散劑中含有複數個鹼性氮原子,含鹼性氮原子之基之一部分藉由與銀粒子之相互作用而有助於粒子之分散穩定性,剩餘之含鹼性氮原子之基有助於提高與上述絕緣性成形體(A)之密接性。又,於下述底塗層(B)使用具有反應性官能基[X]之樹脂之情形,分散劑中之含鹼性氮原子之基能夠與該反應性官能基[X]之間形成鍵,而可進一步提高下述圖案金屬層(PM2)於上述絕緣性成形體(A)上之密接性,因此較佳。
上述分散劑就銀粒子之分散液之穩定性、塗佈性、及能夠於上述絕緣性成形體(A)上形成表現出良好密接性之導電性金屬層(M1)之方面而言,分散劑較佳為高分子分散劑,作為該高分子分散劑,較佳為聚伸乙基亞胺、聚伸丙基亞胺等聚伸烷基亞胺、於上述聚伸烷基亞胺上加成聚氧伸烷基之化合物等。
作為於上述聚伸烷基亞胺上加成聚氧伸烷基之化合物,可為聚伸乙基亞胺與聚氧伸烷基呈直鏈狀鍵結者,亦可為相對於由上述聚伸乙基亞胺構成之主鏈而於其側鏈上接枝聚氧伸烷基者。
作為於上述聚伸烷基亞胺上加成聚氧伸烷基之化合物之具體例,例如可列舉:聚伸乙基亞胺與聚氧乙烯之嵌段共聚物;使聚伸乙基亞胺之主鏈中存在之亞胺基之一部分與環氧乙烷進行加成反應而導入聚氧乙烯結構
者;使聚伸烷基亞胺所具有之胺基與聚氧乙二醇所具有之羥基及環氧樹脂所具有之環氧基進行反應而獲得者等。
作為上述聚伸烷基亞胺之市售品,可列舉:日本觸媒股份有限公司製造之「EPOMIN(註冊商標)PAO系列」之「PAO2006W」、「PAO306」、「PAO318」、「PAO718」等。
上述聚伸烷基亞胺之數量平均分子量較佳為3,000~30,000之範圍。
關於用以使上述銀粒子分散所需之上述分散劑之使用量,相對於上述銀粒子100質量份,較佳為0.01~50質量份之範圍,又,就能夠於上述絕緣性成形體(A)上或下述底塗層(B)上形成表現出良好密接性之導電性金屬層(M1)之方面而言,相對於上述銀粒子100質量份,較佳為0.1~10質量份之範圍,進而就可提高上述導電性金屬層(M1)之導電性之方面而言,更佳為0.1~5質量份之範圍。
作為上述銀粒子之分散液之製造方法,並無特別限制,可採用各種方法製造,例如可使採用低真空氣體中蒸發法等氣相法所製造之銀粒子分散於溶劑中,亦可液相還原銀化合物而直接製備銀粒子之分散液。氣相、液相法均可適當視需要藉由溶劑交換或溶劑添加而變更製造時之分散液與塗佈時之分散液之溶劑組成。氣相、液相法之中,就分散液之穩定性或製造步驟之簡便性而言,可尤佳地採用液相法。作為液相法,例如可藉由在上述高分子分散劑之存在下還原銀離子而製造。
視需要可進而於上述銀粒子之分散液中摻合界面活性劑、調平劑、黏度調整劑、成膜助劑、消泡劑、防腐劑等有機化合物。
作為上述界面活性劑,例如可列舉:聚氧乙烯壬基苯基醚、聚氧乙烯月桂醚、聚氧乙烯苯乙烯基苯基醚、聚氧乙烯山梨醇四油酸酯、聚氧乙
烯-聚氧丙烯共聚物等非離子系界面活性劑;油酸鈉等脂肪酸鹽、烷基硫酸酯鹽、烷基苯磺酸鹽、烷基磺基琥珀酸鹽、萘磺酸鹽、聚氧乙烯烷基硫酸鹽、烷磺酸酯鈉鹽、烷基二苯基醚磺酸鈉鹽等陰離子系界面活性劑;烷基胺鹽、烷基三甲基銨鹽、烷基二甲基苄基銨鹽等陽離子系界面活性劑等。
作為上述調平劑,可使用一般之調平劑,例如可列舉:聚矽氧系化合物、乙炔二醇系化合物、氟系化合物等。
作為上述黏度調整劑,可使用一般之增黏劑,例如可列舉:藉由調整為鹼性而能夠增黏之丙烯酸聚合物、合成橡膠乳膠、藉由分子締合而能夠增黏之胺酯樹脂、羥乙基纖維素、羧甲基纖維素、甲基纖維素、聚乙烯醇、氫化蓖麻油、醯胺蠟、氧化聚乙烯、金屬皂、二亞苄基山梨醇等。
作為上述成膜助劑,可使用一般之成膜助劑,例如可列舉:二辛基磺基琥珀酸酯鈉鹽等陰離子系界面活性劑、山梨醇酐單油酸酯等疏水性非離子系界面活性劑、聚醚改質矽氧烷、聚矽氧油等。
作為上述消泡劑,可使用一般之消泡劑,例如可列舉:聚矽氧系消泡劑、非離子系界面活性劑、聚醚、高級醇、聚合物系界面活性劑等。
又,作為本發明之更佳態樣,有如下方法(步驟1'):於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1)前,先於絕緣性成形體(A)上形成底塗層(B),其後於該層上形成含有銀粒子之導電性金屬層(M1)。設置該底塗層(B)之方法可進一步提高金屬圖案層(PM2)對上述絕緣性成形體(A)之密接性,因此較佳。
上述底塗層(B)可藉由在上述絕緣性成形體(A)之表面之一
部分或整面塗佈底塗劑,將上述底塗劑中所含之水性介質、有機溶劑等溶劑去除而形成。此處,所謂底塗劑係基於提高金屬圖案層(PM2)對絕緣性成形體(A)之密接性之目的而使用,係使下述各種樹脂溶解或分散於溶劑中而成之液狀組成物。
作為於上述絕緣性成形體(A)塗佈上述底塗劑之方法,只要能夠良好地形成底塗層(B)則並無特別限制,根據使用之絕緣性成形體(A)之形狀、尺寸、剛柔程度等適當選擇各種塗佈方法即可。作為具體之塗佈方法,例如可列舉:凹版法、膠版法、柔版法、移印法、凹版膠版法、凸版法、凸版反轉法、網版法、微觸法、逆輥法、氣動括塗法、刮刀塗佈法、氣刀塗佈法、擠壓式塗佈法、含浸式塗佈法、轉印輥塗佈法、接觸式塗佈法、塗鑄法、噴塗法、噴墨法、模嘴塗佈法、旋轉塗佈法、棒式塗佈法、浸漬塗佈法等。
又,作為於膜狀、片狀、板狀之上述絕緣性成形體(A)之兩面塗佈上述底塗劑之方法,只要能夠良好地形成底塗層(B)則並無特別限制,適當選擇上述例示之塗佈方法即可。此時,可於上述絕緣性成形體(A)之兩面同時形成上述底塗層(B),亦可於上述絕緣性成形體(A)之一面形成上述底塗層(B)後再於另一面形成。進而,於上述絕緣性成形體(A)為立體形狀之成形體之情形,根據成形體之尺寸、形狀而適當選擇上述例示之塗佈方法即可,宜為噴塗法、噴墨法、浸漬塗佈法等。
基於提高底塗劑之塗佈性、或提高上述金屬圖案層(PM2)對基材之密接性之目的,上述絕緣性成形體(A)亦可於底塗劑塗佈(步驟1')前進行表面處理。作為上述絕緣性成形體(A)之表面處理方法,可採用與上述之於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1)之情形之表面處理方法相同之方法。
作為於絕緣性成形體(A)之表面塗佈上述底塗劑後將該塗佈
層所含之溶劑去除而形成底塗層(B)之方法,一般為例如使用乾燥機進行乾燥而使上述溶劑揮發之方法。關於乾燥溫度,設定為能夠使上述溶劑揮發、且不會對上述絕緣性成形體(A)產生不良影響之範圍之溫度即可,可為室溫乾燥亦可為加熱乾燥。具體之乾燥溫度較佳為20~350℃之範圍,更佳為60~300℃之範圍。又,乾燥時間較佳為1~200分鐘之範圍,更佳為1~60分鐘之範圍。
上述乾燥可進行送風,亦可不特別進行送風。又,乾燥可於大氣中進行,亦可於氮氣、氬氣等置換環境、或氣流下進行,亦可於真空下進行。
於上述絕緣性成形體(A)為單片之膜、片、板、或三維立體形狀之成形體之情形,除了於塗佈場所自然乾燥以外,可於送風、定溫乾燥器等乾燥器內進行乾燥。又,於上述絕緣性成形體(A)為卷狀膜或卷狀片之情形,可藉由在塗佈步驟後使卷狀材於設置之非加熱或加熱空間內連續地移動而進行乾燥。
上述底塗層(B)之膜厚根據使用本發明製造之具有金屬圖案之成形體之規格、用途而適當選擇即可,就可進一步提高上述絕緣性成形體(A)與上述圖案金屬層(PM2)之密接性之方面而言,較佳為10nm~30μm之範圍,更佳為10nm~1μm之範圍,進而較佳為10nm~500nm之範圍。
關於形成底塗層(B)之樹脂,於上述銀粒子之分散劑使用含有反應性官能基[Y]者之情形,較佳為含有對反應性官能基[Y]具有反應性之反應性官能基[X]之樹脂。作為上述反應性官能基[X],例如可列舉:胺基、醯胺基、烷醇基醯胺(alkylol amide)基、羧基、無水羧基、羰基、乙醯乙醯基(acetoacetyl)、環氧基、脂環環氧基、氧環丁烷環、乙烯基、烯丙基、(甲基)丙烯醯基、(封端化)異氰酸酯基、(烷氧基)矽烷基等。又,亦可使用倍半矽
氧烷化合物作為形成底塗層(B)之化合物。
尤其於上述分散劑中之反應性官能基[Y]為含鹼性氮原子之基之情形,可進一步提高上述絕緣性成形體(A)上之金屬圖案層(PM2)之密接性,就此方面而言,形成底塗層(B)之樹脂較佳為含有羧基、羰基、乙醯乙醯基、環氧基、脂環環氧基、烷醇基醯胺基、異氰酸酯基、乙烯基、(甲基)丙烯醯基、烯丙基作為反應性官能基[X]者。
作為形成上述底塗層(B)之樹脂,例如可列舉:胺酯樹脂、丙烯酸樹脂、以胺酯樹脂作為殼且以丙烯酸樹脂作為核之核-殼型複合樹脂、環氧樹脂、醯亞胺樹脂、醯胺樹脂、三聚氰胺樹脂、酚樹脂、脲甲醛樹脂、使聚異氰酸酯與苯酚等封端化劑反應而獲得之封端異氰酸酯聚乙烯醇、聚乙烯基吡咯啶酮等。再者,以胺酯樹脂作為殼且以丙烯酸樹脂作為核之核-殼型複合樹脂例如藉由在胺酯樹脂存在下使丙烯酸單體聚合而獲得。又,該等樹脂可使用一種或將兩種以上併用。
形成上述底塗層(B)之樹脂之中,就可進一步提高金屬圖案層(PM2)於絕緣性成形體(A)上之密接性之方面而言,較佳為藉由加熱生成還原性化合物之樹脂。作為上述還原性化合物,例如可列舉:酚化合物、芳香族胺化合物、硫化合物、磷酸化合物、醛化合物等。該等還原性化合物之中,較佳為酚化合物、醛化合物。
於底塗劑使用藉由加熱生成還原性化合物之樹脂之情形,在形成底塗層(B)時之加熱乾燥步驟中生成甲醛、苯酚等還原性化合物。作為藉由加熱生成還原性化合物之樹脂之具體例,例如可列舉:使包含N-烷醇基(甲基)丙烯醯胺之單體聚合而成之樹脂、以胺酯樹脂作為殼且以使包含N-烷醇基(甲基)丙烯醯胺之單體聚合而成之樹脂作為核之核-殼型複合樹脂、脲-甲醛-甲醇縮合物、脲-三聚氰胺-甲醛-甲醇縮合物、聚N-烷氧基羥甲基(甲基)丙烯醯
胺、聚(甲基)丙烯醯胺之甲醛加成物、三聚氰胺樹脂等藉由加熱生成甲醛之樹脂;酚樹脂、苯酚封端異氰酸酯等藉由加熱生成酚化合物之樹脂等。該等樹脂之中,就提高密接性之觀點而言,較佳為以胺酯樹脂作為殼且以使包含N-烷醇基(甲基)丙烯醯胺之單體聚合而成之樹脂作為核之核-殼型複合樹脂、三聚氰胺樹脂、苯酚封端異氰酸酯。
再者,於本發明中,所謂「(甲基)丙烯醯胺」係指「甲基丙烯醯胺」及「丙烯醯胺」之一者或兩者,所謂「(甲基)丙烯酸」係指「甲基丙烯酸」及「丙烯酸」之一者或兩者。
藉由加熱生成還原性化合物之樹脂能以使具有藉由加熱生成還原性化合物之官能基之單體藉由自由基聚合、陰離子聚合、陽離子聚合等聚合方法進行聚合之方式獲得。
作為具有藉由加熱生成還原性化合物之官能基之單體,例如可列舉N-烷醇基乙烯基單體,具體而言,可列舉:N-羥甲基(甲基)丙烯醯胺、N-甲氧基甲基(甲基)丙烯醯胺、N-乙氧基甲基(甲基)丙烯醯胺、N-丙氧基甲基(甲基)丙烯醯胺、N-異丙氧基甲基(甲基)丙烯醯胺、N-正丁氧基甲基(甲基)丙烯醯胺、N-異丁氧基甲基(甲基)丙烯醯胺、N-戊氧基甲基(甲基)丙烯醯胺、N-乙醇(甲基)丙烯醯胺、N-丙醇(甲基)丙烯醯胺等。
又,於製造上述藉由加熱生成還原性化合物之樹脂時,亦可使(甲基)丙烯酸烷基酯等其他各種單體與具有藉由加熱生成還原性化合物之官能基之單體等一起進行共聚合。
於使用上述封端異氰酸酯作為形成上述底塗層(B)之樹脂之情形,藉由異氰酸酯基間之自反應形成脲二酮鍵,或異氰酸酯基與其他成分所具有之官能基形成鍵,藉此形成底塗層(B)。此時形成之鍵可於塗佈上述銀粒子分散液之前形成,亦可不於塗佈上述銀粒子分散液之前形成,而於塗佈上
述銀粒子分散液後藉由加熱形成。
作為上述封端異氰酸酯,可列舉具有由異氰酸酯基經封端劑封端而形成之官能基者。
上述封端異氰酸酯較佳為平均每1莫耳封端異氰酸酯具有350~600g/mol之範圍之上述官能基者。
就提高密接性之觀點而言,較佳為上述封端異氰酸酯一分子中具有1~10個上述官能基,更佳為具有2~5個。
又,上述封端異氰酸酯之數量平均分子量就提高密接性之觀點而言,較佳為1,500~5,000之範圍,更佳為1,500~3,000之範圍。
進而,就進一步提高密接性之觀點而言,上述封端異氰酸酯較佳為具有芳香環者。作為上述芳香環,可列舉:苯基、萘基等。
再者,上述封端異氰酸酯可藉由使異氰酸酯化合物所具有之異氰酸酯基之一部分或全部與封端劑進行反應而製造。
作為成為上述封端異氰酸酯之原料之異氰酸酯化合物,例如可列舉:4,4'-二苯基甲烷二異氰酸酯、2,4'-二苯基甲烷二異氰酸酯、碳二醯亞胺改質二苯基甲烷二異氰酸酯、粗二苯基甲烷二異氰酸酯、苯二異氰酸酯、甲苯二異氰酸酯、萘二異氰酸酯等具有芳香環之聚異氰酸酯化合物;六亞甲基二異氰酸酯、離胺酸二異氰酸酯、環己烷二異氰酸酯、異佛爾酮二異氰酸酯、二環己基甲烷二異氰酸酯、苯二甲基二異氰酸酯、四甲基苯二甲基二異氰酸酯等脂肪族聚異氰酸酯化合物或具有脂環式結構之聚異氰酸酯化合物等。又,亦可列舉上述聚異氰酸酯化合物之縮二脲體、異氰尿酸酯體、加成物體等。
又,作為上述異氰酸酯化合物,亦可列舉使上述例示之聚異氰酸酯化合物與具有羥基或胺基之化合物等進行反應而獲得者。
於對上述封端異氰酸酯導入芳香環之情形,較佳為使用具有芳
香環之聚異氰酸酯化合物。又,具有芳香環之聚異氰酸酯化合物之中,較佳為4,4'-二苯基甲烷二異氰酸酯、甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯之異氰尿酸酯體、甲苯二異氰酸酯之異氰尿酸酯體。
作為用於製造上述封端異氰酸酯之封端化劑,例如可列舉:苯酚、甲酚等酚化合物;ε-己內醯胺、δ-戊內醯胺、γ-丁內醯胺等內醯胺化合物;甲醯胺肟、乙醛肟、丙酮肟、甲基乙基酮肟、甲基異丁基酮肟、環己酮肟等肟化合物;2-羥基吡啶、丁基賽路蘇、丙二醇單甲醚、苄醇、甲醇、乙醇、正丁醇、異丁醇、丙二酸二甲酯、丙二酸二乙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、乙醯丙酮、丁硫醇、十二硫醇、乙醯苯胺、乙醯胺、琥珀醯亞胺、順丁烯二醯亞胺、咪唑、2-甲基咪唑、脲、硫脲、伸乙脲、二苯基苯胺、苯胺、咔唑、伸乙亞胺、聚伸乙基亞胺、1H-吡唑、3-甲基吡唑、3,5-二甲基吡唑等。該等之中,較佳為藉由在70~200℃之範圍加熱能夠解離生成異氰酸酯基之封端化劑,更佳為藉由在110~180℃之範圍加熱能夠解離生成異氰酸酯基之封端化劑。具體而言,較佳為酚化合物、內醯胺化合物、肟化合物,尤其就封端化劑藉由加熱而脫離時成為還原性化合物之方面而言,更佳為酚化合物。
作為上述封端異氰酸酯之製造方法,例如可列舉:將預先製造之上述異氰酸酯化合物與上述封端化劑進行混合並使之反應之方法、將上述封端化劑與用於製造上述異氰酸酯化合物之原料一起進行混合並使之反應之方法等。
更具體而言,上述封端異氰酸酯能以如下方式製造:藉由使上述聚異氰酸酯化合物與具有羥基或胺基之化合物反應而製造末端具有異氰酸酯基之異氰酸酯化合物,繼而,將上述異氰酸酯化合物與上述封端化劑進行混合並使之反應。
藉由上述方法獲得之封端異氰酸酯於形成上述底塗層(B)之
樹脂中之含有比率較佳為50~100質量%之範圍,更佳為70~100質量%之範圍。
作為上述三聚氰胺樹脂,例如可列舉:相對於三聚氰胺1莫耳加成甲醛1~6莫耳而成之單或聚羥甲基三聚氰胺;三甲氧基羥甲基三聚氰胺、三丁氧基羥甲基三聚氰胺、六甲氧基羥甲基三聚氰胺等(聚)羥甲基三聚氰胺之醚化物(醚化度任意);脲-三聚氰胺-甲醛-甲醇縮合物等。
又,除了如上所述使用藉由加熱生成還原性化合物之樹脂之方法以外,亦可列舉對樹脂添加還原性化合物之方法。於該情形,作為添加之還原性化合物,例如可列舉:酚系抗氧化劑、芳香族胺系抗氧化劑、硫系抗氧化劑、磷酸系抗氧化劑、維生素C、維生素E、乙二胺四乙酸鈉、亞硫酸鹽、次磷酸、次磷酸鹽、肼、甲醛、硼氫化鈉、二甲胺硼烷、苯酚等。
於本發明中,對樹脂添加還原性化合物之方法最終會有低分子量成分或離子性化合物殘留而導致存在導致電特性降低之可能性,因此更佳為使用藉由加熱生成還原性化合物之樹脂之方法。
用於形成上述底塗層(B)之底塗劑就塗佈性、成膜性之觀點而言,較佳為於底塗劑中含有1~70質量%之上述樹脂者,更佳為含有1~20質量%者。
又,作為可用於上述底塗劑之溶劑,可列舉:各種有機溶劑、水性介質。作為上述有機溶劑,例如可列舉:甲苯、乙酸乙酯、甲基乙基酮、環己酮等,作為上述水性介質,可列舉:水、與水混合之有機溶劑、及該等混合物。
作為上述與水混合之有機溶劑,例如可列舉:甲醇、乙醇、正丙醇、異丙醇、乙基卡必醇、乙基賽路蘇(ethylcellosolve)、丁基賽路蘇等醇溶劑;丙酮、甲基乙基酮等酮溶劑;乙二醇、二乙二醇、丙二醇等伸烷基二醇
溶劑;聚乙二醇、聚丙二醇、聚四亞甲基二醇等聚伸烷基二醇溶劑;N-甲基-2-吡咯啶酮等內醯胺溶劑等。
又,形成上述底塗層(B)之樹脂視需要可具有例如烷氧基矽烷基、矽烷醇基、羥基、胺基等有助於交聯反應之官能基。關於利用該等官能基形成之交聯結構,可於後續步驟之形成含有銀粒子之導電性金屬層(M1)之步驟之前已經形成交聯結構,又,亦可於形成含有銀粒子之導電性金屬層(M1)之步驟之後形成交聯結構。於形成含有銀粒子之導電性金屬層(M1)之步驟之後形成交聯結構之情形,可於形成上述金屬圖案層(PM2)前使上述底塗層(B)形成交聯結構,亦可於形成上述金屬圖案層(PM2)後藉由例如熟化使上述底塗層(B)形成交聯結構。
視需要可於上述底塗層(B)中適當添加使用以交聯劑為代表之pH調整劑、皮膜形成助劑、調平劑、增黏劑、撥水劑、消泡劑等公知者。
作為上述交聯劑,例如可列舉:金屬螯合物化合物、聚胺化合物、氮丙啶化合物、金屬鹽化合物、異氰酸酯化合物等,可列舉:於25~100℃左右之相對低溫下反應形成交聯結構之熱交聯劑、三聚氰胺系化合物、環氧系化合物、唑啉化合物、碳二醯亞胺化合物、封端異氰酸酯化合物等於100℃以上之相對高溫下反應形成交聯結構之熱交聯劑或各種光交聯劑。
上述交聯劑之使用量根據種類而異,就提高上述絕緣性成形體(A)上之圖案金屬層(PM2)之密接性之觀點而言,相對於上述底塗劑所含之樹脂之合計100質量份,較佳為0.01~60質量份之範圍,更佳為0.1~10質量份之範圍,進而較佳為0.1~5質量份之範圍。
於使用上述交聯劑之情形,可於後續步驟之形成含有銀粒子之導電性金屬層(M1)之步驟之前已經形成交聯結構,又,亦可於形成含有銀粒子之導電性金屬層(M1)之步驟之後形成交聯結構。於形成含有銀粒子之導電
性金屬層(M1)之步驟之後形成交聯結構之情形,可於形成上述圖案金屬層(PM2)前使上述底塗層(B)形成交聯結構,亦可於形成上述圖案金屬層(PM2)後藉由例如熟化使上述底塗層(B)形成交聯結構。
於本發明之步驟1'中,於上述底塗層(B)上形成含有銀粒子之導電性金屬層(M1)之方法與於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1)之方法相同。
又,上述底塗層(B)可與上述絕緣性成形體(A)同樣地,基於提高上述銀粒子分散液之塗佈性、或提高金屬圖案層(PM2)對上述絕緣性成形體(A)之密接性之目的,於塗佈銀粒子分散液前進行表面處理。
於本發明之步驟2中,藉由將上述導電性金屬層(M1)之一部分去除而分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1)。為了將上述導電性金屬層(M1)分離為圖案形成區域(PM1)與非圖案形成區域(NPM1),只要將目標金屬圖案之形成區域(PM1)與非圖案形成區域(NPM1)之邊界部之導電性金屬層(M1)去除即可。作為去除邊界部之導電性金屬層(M1)之方法,可列舉:機械性削取導電性金屬層(M1)之方法、藉由照射電磁波去除之方法等。機械性削取導電性金屬層(M1)之方法例如可使用IPtronics公司之基板加工機等。又,作為藉由照射電磁波去除之方法,可列舉使用X射線、脈衝閃光燈、雷射等之方法。
上述去除邊界部之導電性金屬層(M1)之方法之中,就圖案形成之解像度較高、或容易應對各種成形體形狀之方面而言,較佳為照射電磁波去除之方法,於照射電磁波之方法之中,就照射能量較高而容易去除導電性金屬層(M1)、便於工業應用而言,較佳為使用雷射。
作為使用之雷射,可使用公知慣用之紅外線雷射、可見光雷射、紫外線雷射,可為連續振盪雷射,亦可為脈衝雷射。作為上述紅外線雷
射,例如可列舉:二氧化碳(CO2)雷射、Nd:YAG雷射、Er:YAG雷射、Yb:YAG雷射、Tm:YAG雷射、Nd:YLF雷射、Nd:玻璃雷射、Nd:YVO4雷射、Cr矽酸鎂石雷射、鈦藍寶石雷射、變石雷射等。又,作為可見光雷射,例如可列舉:玻璃雷射、紅寶石雷射、銅蒸氣雷射、色素雷射、及各種紅外線雷射之二次諧波等。進而,作為紫外線雷射,可列舉:氮氣雷射、準分子雷射、及各種紅外線雷射之三次諧波、四次諧波等。又,可根據目的選擇各種波長之半導體雷射、及半導體雷射之高次諧波。
為了沿著所需之圖案形狀照射雷射光,去除上述邊界部之導電性金屬層(M1)之雷射較佳為具有使用檢流計掃描儀、光纖等而能夠於導電性金屬層(M1)上高速移動雷射光之照射部之掃描系統。此種掃描系統可將雷射振盪機與檢流計掃描儀、光纖加以組合而製作,亦可使用市售之雷射加工機、雷射刻號機等。
上述各種雷射之中,二氧化碳(CO2)雷射、Nd:YAG雷射、Er:YAG雷射、Yb:YAG雷射、Tm:YAG雷射、Nd:YLF雷射、Nd:玻璃雷射、Nd:YVO4雷射、及半導體雷射市售有作為雷射加工機或雷射刻號機之系統,因此適於工業上之利用。
於步驟2中,對上述導電性金屬層(M1)之圖案形成區域與非圖案形成區域之邊界,以使雷射光沿著所需圖案移動(掃描)之方式照射雷射光,藉此去除上述導電性金屬層(M1)而分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1)。去除上述導電性金屬層(M1)時,亦可將與上述導電性金屬層(M1)一起被照射雷射之上述導電性金屬層(M1)下之上述絕緣性基材(A)之表面或上述底塗層(B)之表面去除,或將上述底塗層(B)及上述絕緣性基材(A)之表面同時去除。
於本發明之步驟3中,如上所述,以所形成之圖案形成區域之導
電性金屬層(PM1)作為陰極進行電解鍍覆處理,藉此於圖案形成區域之導電性金屬層(PM1)上形成作為鍍覆金屬層之圖案金屬層(PM2)。非圖案形成區域之導電性金屬層(NPM1)未被通電,因此非圖案形成區域不會因電解鍍覆處理而厚膜化。
作為構成上述圖案金屬層(PM2)之金屬,例如可列舉:銅、鎳、鉻、鋅、錫、金、銀、銠、鈀、鉑等。該等金屬之中,於形成之金屬圖案為導體電路圖案之情形,就價格低廉且電阻值較低之方面而言,較佳為銅,較佳為藉由電解鍍銅形成上述圖案金屬層(PM2)。電解鍍銅使用公知慣用之方法進行即可,較佳為使用硫酸銅浴之硫酸銅鍍敷法。
構成上述圖案金屬層(PM2)之鍍覆金屬可使用一種,亦可將兩種以上併用。例如於形成之金屬圖案為裝飾圖案之情形,為了緩和鍍覆金屬之應力而於最外層之鍍鎳-鉻之下層實施鍍銅。作為此時之鍍覆,可於上述圖案形成區域之導電性金屬層(PM1)上進行電解鍍鎳後進行電解鍍銅,進而進行電解鍍鎳、電解鍍鉻,亦可於上述圖案形成區域之導電性金屬層(PM1)上進行電解鍍銅,其後進行電解鍍鎳、電解鍍鉻。
又,於本發明之具有金屬圖案的成形體之製造方法中,基於緩和鍍膜之應力或提高密接力之目的,可於鍍覆後進行退火。退火可於下述步驟4之蝕刻之前進行,亦可於蝕刻之後進行,亦可於蝕刻之前及之後進行。
退火之溫度根據使用之基材之耐熱性或使用目的而於40~300℃之溫度範圍適當選擇即可,較佳為40~250℃之範圍,為了抑制鍍膜之氧化劣化,更佳為40~200℃之範圍。又,退火之時間於40~200℃之溫度範圍之情形宜為10分鐘~10天,超過200℃之溫度下之退火宜為5分鐘~10小時左右。又,對鍍膜進行退火時,可適當於鍍膜表面賦予防銹劑。
於本發明之步驟4中,藉由蝕刻液去除上述非圖案形成區域之導
電性金屬層(NPM1)時使用之蝕刻液較佳為僅選擇性地蝕刻上述導電性金屬層(M1)而不蝕刻上述金屬圖案層(M2)者。此處,由於上述導電性金屬層(M1)含有銀粒子,故而較佳為銀溶解速度較快之蝕刻液。作為此種蝕刻液之組成,例如可列舉:稀硝酸、羧酸與過氧化氫之混合物、氨水與過氧化氫之混合物、鹽酸、鹽酸與硝酸之混合物、硫酸與硝酸之混合物、硫酸與硝酸與有機酸(例如乙酸等)之混合物、磷酸與硝酸與有機酸(例如乙酸等)之混合物等。
於使用銅作為構成上述金屬圖案層(PM2)之金屬之情形,於本發明之步驟4中去除上述非圖案形成區域之導電性金屬層(NPM1)時,較佳為儘可能不蝕刻銅而可效率良好地僅去除銀之蝕刻液。作為此種蝕刻液,可列舉羧酸與過氧化氫之混合物。
作為上述羧酸,例如可列舉:乙酸、甲酸、丙酸、丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、月桂酸、肉豆蔻酸、棕櫚酸、珠光子酸、硬脂酸、油酸、亞麻油酸、次亞麻油酸、花生油酸、二十碳五烯酸、二十二碳六烯酸、草酸、丙二酸、琥珀酸、苯甲酸、水楊酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、沒食子酸、苯六甲酸、桂皮酸、丙酮酸、乳酸、蘋果酸、檸檬酸、反丁烯二酸、順丁烯二酸、烏頭酸、戊二酸、己二酸、胺基酸等。該等羧酸可使用一種或將兩種以上併用。該等羧酸之中,就作為蝕刻液之製造、操作較容易之方面而言,較佳為主要使用乙酸。
認為若使用羧酸與過氧化氫之混合物作為蝕刻液,則藉由過氧化氫與羧酸反應而生成過羧酸(過氧羧酸)。推測所生成之過羧酸不僅抑制構成圖案金屬層(PM2)之銅之溶解,且優先溶解構成導電性金屬層(M1)之銀。
作為上述羧酸與過氧化氫之混合物之混合比率,就可抑制金屬
圖案層(PM2)之溶解之方面而言,相對於羧酸1莫耳,過氧化氫較佳為2~100莫耳之範圍,過氧化氫更佳為2~50莫耳之範圍。
上述羧酸與過氧化氫之混合物較佳為經水稀釋之水溶液。又,上述水溶液中之上述羧酸與過氧化氫之混合物之含有比率就可抑制蝕刻液之溫度上升之影響之方面而言,較佳為2~65質量%之範圍,更佳為2~30質量%之範圍。
作為用於上述稀釋之水,較佳為使用離子交換水、純水、超純水等去除離子性物質或雜質之水。
亦可於上述蝕刻液中進而添加用以保護上述金屬圖案層(PM2)之抑制溶解之保護劑。於將上述金屬圖案層(PM2)設為電解鍍銅層之情形,較佳為使用唑化合物作為保護劑。
作為上述唑化合物之具體例,例如可列舉:2-甲基苯并咪唑、胺基三唑、1,2,3-苯并三唑、4-胺基苯并三唑、1-雙胺基甲基苯并三唑、胺基四唑、苯基四唑、2-苯基噻唑、苯并噻唑等。該等唑化合物可使用一種或將兩種以上併用。
上述唑化合物於蝕刻液中之濃度較佳為0.001~2質量%之範圍,更佳為0.01~0.2質量%之範圍。
又,於將上述金屬圖案層(PM2)設為電解鍍銅層之情形,就可抑制電解鍍銅層之溶解之方面而言,較佳為於上述蝕刻液中添加聚伸烷基二醇作為保護劑。
作為上述聚伸烷基二醇,例如可列舉:聚乙二醇、聚丙二醇、聚氧乙烯聚氧丙烯嵌段共聚物等水溶性等。該等之中,較佳為聚乙二醇。又,
作為聚伸烷基二醇之數量平均分子量,較佳為200~20,000之範圍。
上述聚伸烷基二醇於蝕刻液中之濃度較佳為0.001~2質量%之範圍,更佳為0.01~1質量%之範圍。
為了抑制pH之變動,視需要亦可於上述蝕刻液摻合有機酸之鈉鹽、鉀鹽、銨鹽等添加劑。
本發明之步驟4中之上述非圖案形成區域之導電性金屬層(NPM1)之去除能以如下方式進行:藉由電解鍍覆形成厚膜化之上述金屬圖案層(PM2)後,將基材浸漬於上述蝕刻液,或使用噴霧器等向上述基材上噴灑蝕刻液。
於圖案金屬層(PM2)如上所述由複數種金屬構成之情形,可於進行電解鍍覆後,進行利用蝕刻液之非圖案形成區域之導電性金屬層(NPM1)之去除,進而進行其他金屬之電解鍍覆,亦可於進行複數種電解鍍覆後,進行利用蝕刻液之去除。
於使用蝕刻裝置去除上述非圖案形成區域之導電性金屬層(NPM1)之情形,例如能以上述蝕刻液之全部成分成為規定組成之方式製備後供給至蝕刻裝置,亦可分開向蝕刻裝置供給上述蝕刻液之各成分,於裝置內將上述各成分混合成為規定組成之方式製備。
上述蝕刻液較佳為於10~35℃之溫度範圍使用,尤其於使用含有過氧化氫之蝕刻液之情形,就可抑制過氧化氫之分解之方面而言,較佳為於30℃以下之溫度範圍使用。
於本發明之步驟4中,利用上述蝕刻液對非圖案形成區域之導電性金屬層(NPM1)進行去除處理後,為了防止蝕刻液中溶解之銀成分附著、殘留於印刷配線板上,除水洗以外,亦可進而進行洗淨操作。洗淨操作較佳為使用溶解氧化銀、硫化銀、氯化銀但幾乎不溶解銀之洗淨溶液。具體而言,較
佳為使用含有硫代硫酸鹽或三(3-羥基烷基)膦之水溶液、或者含有巰基羧酸或其鹽之水溶液作為洗淨化學溶液。
作為上述硫代硫酸鹽,例如可列舉:硫代硫酸銨、硫代硫酸鈉、硫代硫酸鉀等。又,作為上述三(3-羥基烷基)膦,例如可列舉:三(3-羥基甲基)膦、三(3-羥基乙基)膦、三(3-羥基丙基)膦等。該等硫代硫酸鹽或三(3-羥基烷基)膦分別可使用一種或將兩種以上併用。
作為使用含有硫代硫酸鹽之水溶液之情形之濃度,根據步驟時間、使用之洗淨裝置之特性等適當設定即可,較佳為0.1~40質量%之範圍,就洗淨效率或連續使用時之化學溶液之穩定性之觀點而言,更佳為1~30質量%之範圍。
又,作為使用含有上述三(3-羥基烷基)膦之水溶液之情形之濃度,根據步驟時間、使用之洗淨裝置之特性等適當設定即可,較佳為0.1~50質量%之範圍,就洗淨效率或連續使用時之化學溶液之穩定性之觀點而言,更佳為1~40質量%之範圍。
作為上述巰基羧酸,例如可列舉:硫代乙醇酸、2-巰基丙酸、3-巰基丙酸、硫代蘋果酸、半胱胺酸、N-乙醯半胱胺酸等。又,作為上述巰基羧酸之鹽,例如可列舉:鹼金屬鹽、銨鹽、胺鹽等。
作為使用巰基羧酸或其鹽之水溶液之情形之濃度,較佳為0.1~20質量%之範圍,就洗淨效率或大量處理之情形之製程成本之觀點而言,更佳為0.5~15質量%之範圍。
作為進行上述洗淨操作之方法,例如可列舉:將上述步驟4中獲得之印刷配線板浸漬於上述洗淨溶液中之方法、使用噴霧器等對上述印刷配線板噴灑洗淨溶液之方法等。關於洗淨溶液之溫度,可於室溫(25℃)下使用,就可不受外部氣溫之影響而穩定地進行洗淨處理之方面而言,例如可將溫度設
定於30℃使用。
又,上述步驟4之藉由蝕刻液去除非圖案形成區域之導電性金屬層(NPM1)之步驟與洗淨操作視需要可反覆進行。
藉由本發明之製造方法所形成之上述金屬圖案層(PM2)主要基於保護金屬層之目的,可藉由無電解鍍覆於表層被覆其他金屬層。例如於形成之金屬圖案為導體電路圖案之情形,可適當視需要對由銅形成之圖案金屬層(PM2)實施鎳/金鍍覆、鎳/鈀/金鍍覆、鈀/金鍍覆。
藉由以上說明之本發明之具有金屬圖案的成形體之製造方法,無需進行複雜之二色成形或使用光阻之暗室內之曝光-顯影等繁雜作業,且無需使用昂貴之真空裝置,而能夠製造於其表面具有密接性較高、表面平滑之金屬圖案的具有平面或三維立體形狀之成形體。因此,藉由本發明之具有金屬圖案的成形體之製造方法,能夠以低成本提供各種形狀、尺寸之具有高密度、高性能之印刷配線板、立體配線之成形電路零件(MID,Molded Interconnect Device),故於印刷配線領域相關產業上之利用性較高。又,本發明之具有金屬圖案的成形體之製造方法可用於在基材表面具有經圖案化之金屬層之各種電子構件,例如亦可應用於連接器、電磁波屏蔽、RFID等天線等。
進而,藉由本發明之具有金屬圖案的成形體之製造方法所製造之具有金屬圖案之成形體不僅可用於電子構件,亦可用於在各種形狀、尺寸之成形體上具有經圖案化之金屬層之功能零件、裝飾鍍覆等用途。
[實施例]
以下,藉由實施例詳細地說明本發明。
[製造例1:底塗劑(B-1)之製造]
於具備溫度計、氮氣導入管、攪拌器之經氮氣置換之容器中,使聚酯多元醇(使1,4-環己烷二甲醇與新戊二醇及己二酸反應獲得之聚酯多元醇)100質量
份、2,2-二羥甲基丙酸17.6質量份、1,4-環己烷二甲醇21.7質量份及二環己基甲烷-4,4'-二異氰酸酯106.2質量份於甲基乙基酮178質量份之混合溶劑中進行反應,藉此獲得末端具有異氰酸酯基之胺酯預聚物溶液。
其次,於上述胺酯預聚物溶液中添加三乙胺13.3質量份將上述胺酯預聚物所具有之羧基中和,進而添加水380質量份並充分攪拌,藉此獲得胺酯預聚物之水性分散液。
藉由對上述獲得之胺酯預聚物之水性分散液添加25質量%乙二胺水溶液8.8質量份並進行攪拌而使胺酯預聚物鏈伸長。繼而,進行熟化、脫溶劑,藉此獲得胺酯樹脂之水性分散液(不揮發成分30質量%)。上述胺酯樹脂之重量平均分子量為53,000。
其次,於具備攪拌機、回流冷卻管、氮氣導入管、溫度計、單體混合物滴加用滴液漏斗、聚合觸媒滴加用滴液漏斗之反應容器中添加去離子水140質量份、上述獲得之胺酯樹脂之水分散液100質量份,一面吹送氮氣一面升溫至80℃。其後,一面攪拌一面將反應容器內溫度保持於80℃歷時120分鐘自不同之滴液漏斗分開滴加由甲基丙烯酸甲酯60質量份、丙烯酸正丁酯30質量份及N-正丁氧基甲基丙烯醯胺10質量份構成之單體混合物、與0.5質量%過硫酸銨水溶液20質量份。
滴加結束後,進而於同溫度下攪拌60分鐘後,將反應容器內之溫度冷卻至40℃,以不揮發成分成為20質量%之方式經去離子水稀釋後,利用200目濾布進行過濾,藉此獲得作為核-殼型複合樹脂之底塗層用樹脂組成物之水分散液,該核-殼型複合樹脂係以上述胺酯樹脂作為殼層,以將甲基丙烯酸甲酯等設為原料之丙烯酸樹脂作為核層。繼而,以異丙醇與水之質量比率為7/3、不揮發成分為2質量%之方式,於該水分散液中添加異丙醇與去離子水,進行混合而獲得底塗劑(B-1)。
[製造例2:底塗劑(B-2)之製造]
於具備攪拌機、回流冷卻管、氮氣導入管、溫度計、滴液漏斗之反應容器中添加去離子水350質量份、界面活性劑(花王股份有限公司製造之「Latemul E-118B」:有效成分25質量%)4質量份,一面吹送氮氣一面升溫至70℃。
於攪拌下向反應容器中添加將由甲基丙烯酸甲酯47.0質量份、甲基丙烯酸縮水甘油酯5.0質量份、丙烯酸正丁酯45.0質量份及甲基丙烯酸3.0質量份構成之乙烯基單體混合物、界面活性劑(第一工業製藥股份有限公司製造之「AQUALON KH-1025」:有效成分25質量%)4質量份、以及去離子水15質量份進行混合而獲得之單體預乳液之一部分(5質量份),繼而添加過硫酸鉀0.1質量份,將反應容器內溫度保持於70℃進行60分鐘聚合。
其次,一面將反應容器內之溫度保持於70℃,一面使用不同之滴液漏斗歷時180分鐘分開滴加剩餘之單體預乳液(114質量份)與過硫酸鉀之水溶液(有效成分1.0質量%)30質量份。滴加結束後,於同溫度下攪拌60分鐘。
將上述反應容器內之溫度冷卻至40℃,繼而以不揮發成分成為10.0質量%之方式使用去離子水後,利用200目濾布進行過濾,藉此獲得本發明中使用之底塗層用樹脂組成物。繼而,於該樹脂組成物中添加水進行稀釋混合,藉此獲得不揮發成分5質量%之底塗劑(B-2)。
[製造例3:底塗劑(B-3)之製造]
一面向具備溫度計、氮氣導入管、攪拌機之反應容器中導入氮氣,一面添加對苯二甲酸830質量份、間苯二甲酸830質量份、1,6-己二醇685質量份、新戊二醇604質量份及二丁基氧化錫0.5質量份,於230℃進行15小時縮聚反應直至180~230℃之酸值變為1以下,而獲得羥值55.9、酸值0.2之聚酯多元醇。
其次,將上述獲得之聚酯多元醇1,000質量份於減壓下100℃脫
水,冷卻至80℃後,添加甲基乙基酮883質量份,充分攪拌使之溶解,添加2,2-二羥甲基丙酸80質量份,繼而添加異佛爾酮二異氰酸酯244質量份,於70℃反應8小時。
上述反應結束後,冷卻至40℃,添加三乙基胺60質量份加以中和後,與水4700質量份混合而獲得透明之反應生成物。自上述反應生成物於40~60℃之減壓下去除甲基乙基酮,繼而混合水,藉此獲得固體成分10質量%之底塗劑(B-3)。
[製備例1:銀粒子分散液之製備]
使用對聚伸乙基亞胺加成聚氧乙烯而成之化合物作為分散劑,使平均粒徑30nm之銀粒子分散於乙二醇45質量份及離子交換水55質量份之混合溶劑中,藉此製備含有銀粒子及分散劑之分散體。繼而,於所獲得之分散體中添加離子交換水、乙醇及界面活性劑,而製備5質量%之銀粒子分散液。
[製備例2:銀用蝕刻液之製備]
對水47.4質量份添加乙酸2.6質量份,進而添加35質量%過氧化氫水50質量份,而製備銀用蝕刻液。該銀用蝕刻液之過氧化氫與羧酸之莫耳比(過氧化氫/羧酸)為13.6,銀用蝕刻液(1)中之過氧化氫及羧酸之混合物之含有比率為22.4質量%。
[製備例4:黑著色底塗劑(B-4)之製備]
相對於上述製造例3中獲得之底塗劑(B-3)100質量份,添加黑著色劑(DIC股份有限公司製造之「Dilac Black HS9530」)2質量份,進而添加異丙醇,進行攪拌,藉此製備不揮發成分6質量%之黑色著色底塗劑(B-4)。
[製作例1:聚苯硫醚(PPS)成形體之製作]
將線型聚苯硫醚(依據ASTM D1238-86之MFR:600g/10min)100質量份、短切玻璃纖維(Asahi Fiber Glass股份有限公司製造之「FT562」,纖維狀
無機填充劑)58.8質量份、鋅離子型乙烯-甲基丙烯酸共聚物(Mitsui Dupont Chemical股份有限公司製造之「Himilan 1855」)8.4質量份及褐煤酸複合酯蠟(Clariant Japan股份有限公司製造之「Licolub WE40」)0.8質量份均勻混合後,使用35mm 之雙軸擠出機於290~330℃進行熔融混練,而獲得聚苯硫醚樹脂組成物。使用射出成形機將所獲得之聚苯硫醚樹脂組成物進行成形,藉此製作尺寸為50mm×105mm×2mm之PPS成形體。
(實施例1)
使用桌上型小型塗佈機(RK Print-Coat Instruments公司製造之「K Printing Proofer」),以乾燥後之平均厚度成為60nm之方式於聚醯亞胺膜(TORAY-DUPONT股份有限公司製造之「Kapton 150EN-C」,厚度38μm)之表面塗佈製備例1中獲得之銀粒子分散液。繼而,使用熱風乾燥機於200℃乾燥30分鐘,藉此於聚醯亞胺膜之表面形成含有銀粒子之導電性金屬層(圖1)。
使用雷射繪圖裝置(KEYENCE股份有限公司製造之「MD-V9900A」:YVO4雷射,波長1,064nm),以雷射強度50%、繪圖速度500mm/sec、頻率50kHz對導電性金屬層上進行雷射照射,而分離為直線狀之圖案形成區域(圖2之PM1)與非圖案形成區域(圖2之NPM1)。再者,圖案形成區域設為寬200μm之直線圖案。
其次,將圖案形成區域之導電性金屬層(圖2之PM1)設定為陰極,將含磷銅設定為陽極,使用含有硫酸銅之電解鍍覆液(硫酸銅70g/L、硫酸200g/L、氯離子50mg/L、添加劑(奧野製藥工業股份有限公司製造之「Top Lucina SF-M」)),以電流密度2.5A/dm2進行20分鐘電解鍍覆,藉此於圖案形成區域利用電解鍍銅形成線寬200μm之圖案金屬層(膜厚10μm)(圖3)。
於25℃將上述獲得之膜於上述製備例2中製備之銀用蝕刻液中浸漬3分鐘,藉此去除非圖案形成區域之導電性金屬層,而獲得具有金屬圖案之
成形體(圖4)。
(實施例2)
將含有銀粒子之導電性金屬層之厚度自60nm變更為100nm,將於銀用蝕刻液中之浸漬時間自3分鐘變更為5分鐘,除此以外,藉由與實施例1相同之方式於聚醯亞胺基材上形成由線寬200μm、厚度10μm之直線狀銅構成之圖案金屬層,而獲得具有金屬圖案之成形體。
(實施例3)
使用桌上型小型塗佈機(RK Print-Coat Instruments公司製造之「K Printing Proofer」),以乾燥後之厚度成為100nm之方式於聚醯亞胺膜(TORAY-DUPONT股份有限公司製造之「Kapton 150EN-C」,厚度38μm)之表面塗佈製造例1中獲得之底塗劑(B-1)。繼而,使用熱風乾燥機於80℃乾燥5分鐘,藉此於聚醯亞胺膜之表面形成底塗層。
其次,使用桌上型小型塗佈機(RK Print-Coat Instruments公司製造之「K Printing Proofer」),以乾燥後之平均厚度成為250nm之方式於底塗層之表面塗佈製備例1中獲得之銀粒子分散液,使用熱風乾燥機於200℃乾燥30分鐘,藉此於底塗層之表面形成含有銀粒子之導電性金屬層。形成導電性金屬層後,藉由與實施例2相同之方式獲得具有金屬圖案之成形體。
(實施例4)
使用上述製作例1中獲得之PPS成形體,於製造例2中獲得之底塗劑(B-2)中浸漬10秒後,取出PPS成形體,靜置1分鐘後,使用熱風乾燥機於200℃乾燥5分鐘,而於PPS成形體上形成底塗層(厚度130nm)。
繼而,將該形成有底塗層之PPS成形體於製備例1中獲得之銀粒子分散液中浸漬10秒。其後,取出PPS成形體,靜置1分鐘後,使用熱風乾燥機於200℃乾燥5分鐘,而於底塗層上形成含有銀粒子之厚100nm之導電性金屬
層。形成導電性金屬層後,藉由與實施例3相同之方式獲得具有金屬圖案之成形體。
(實施例5)
使用聚萘二甲酸乙二酯(以下簡記為「PEN」)膜(Teijin Film Solution股份有限公司製造之「Teonex Q51」,厚度25μm)代替實施例3中使用之聚醯亞胺膜,使用製造例3中獲得之底塗劑(B-3)代替底塗劑(B-1),將銀粒子分散液塗佈後之乾燥溫度變更為150℃,除此以外,藉由與實施例3相同之方式於底塗層之表面形成含有銀粒子之導電性金屬層。形成導電性金屬層後,藉由與實施例3相同之方式獲得具有金屬圖案之成形體。
(實施例6)
使用黑色底塗劑(B-4)代替實施例3中使用之底塗劑(B-3),將雷射繪圖裝置之雷射強度自50%變更為30%,除此以外,藉由與實施例5相同之方式獲得於形成有黑色底塗層之聚萘二甲酸乙二酯膜上具有線寬200μm、厚度10μm之直線狀銅金屬圖案之成形體。
(比較例1)
於聚醯亞胺膜(TORAY-DUPONT股份有限公司製造之「Kapton 150EN-C」,厚度38μm)之表面藉由濺鍍法形成鎳/鉻層(膜厚30nm,鎳/鉻質量比=8/2),繼而藉由濺鍍法形成銅層(膜厚100nm),而製成導電性金屬層。
與實施例1同樣地使用雷射繪圖裝置於導電性金屬層上形成寬200μm之直線狀之圖案形成區域,結果由於藉由濺鍍法形成之金屬層為連續膜,故而雷射加工緣部之導電性金屬層鼓起,後續步驟之電解鍍覆導致金屬圖案緣部隆起,圖案不整齊。
將上述獲得之膜於銅之晶種蝕刻所使用之10質量%之過硫酸鈉水溶液中浸漬5分鐘,結果圖案形成區域以外之導電性金屬層之銅被去除,但
鎳/鉻層未被去除而殘留。又,藉由電解鍍覆所形成之金屬圖案層與鎳/鉻層之間存在之藉由濺鍍法形成之銅層受到蝕刻,結果觀察到底切,上述隆起部分之圖案金屬層發生剝離。
(比較例2)
使用上述製作例1中獲得之PPS成形體,於其表面藉由濺鍍法形成鎳層(膜厚300nm),繼而藉由濺鍍法形成銅層(膜厚100nm)作為導電性金屬層。
與實施例1同樣地使用雷射繪圖裝置於導電性金屬層上形成寬200μm之直線狀之圖案形成區域,結果由於藉由濺鍍法形成之金屬層為連續膜,故而雷射加工緣部之導電性金屬層鼓起,於後續步驟之電解鍍覆中金屬圖案緣部隆起,圖案不整齊。
又,將上述獲得之電解鍍覆後之PPS成形體在用於銅之晶種蝕刻之10質量%之過硫酸鈉水溶液中浸漬5分鐘,結果圖案形成區域以外之導電性金屬層之銅被去除,但鎳層未被去除而殘留。又,藉由電解鍍覆所形成之金屬圖案層之銅亦受到蝕刻,結果觀察到底切,圖案金屬層發生剝離。
針對上述實施例1~6中獲得之具有金屬圖案之成形體,藉由下述方法進行配線間利用測試機之導通確認、絕緣電阻之測定、非圖案形成區域之絕緣電阻之測定、剝離強度之測定、底切之有無及圖案形成區域之圖案金屬層之截面形狀之確認。
[非圖案形成區域部之絕緣電阻之測定]
針對上述獲得之具有金屬圖案之成形體之非圖案形成區域部(圖案金屬層形成部以外之銀去除區域),使用Mitsubishi Chemical Analytech股份有限公司製造之Hiresta-UP(MCP-HT450型),測定施加100V時之電阻值。再者,於電阻值顯示「OL」之情形,表示為超出測定裝置規格之9.99×1013Ω以上之電阻值。
[圖案形成部之底切之有無及截面形狀之確認]
使用掃描式電子顯微鏡(日本電子股份有限公司製造之「JSM7800」)將上述獲得之印刷配線板之圖案形成部(以導電金屬層及圖案金屬層構成之部分)之剖面放大至500~10,000倍進行觀察,確認底切之有無及截面形狀。
[剝離強度之測定]
於上述實施例1~6中,形成導電性金屬層後,藉由與上述相同方式製作線寬1cm之直線狀圖案形成區域,進行30分鐘之硫酸銅鍍敷,藉此製作具有鍍銅膜厚15μm之圖案金屬層之試驗片。使用西進商事股份有限公司製造之「Multi-bond Tester SS-30WD」,對所製作之試驗片進行90°方向之剝離試驗而測定剝離強度。
將實施例1~6中獲得之具有金屬圖案之成形體之測定結果彙總示於表1。
A:絕緣性成形體
PM1:圖案形成區域之導電性金屬層
PM2:圖案金屬層
Claims (10)
- 一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其具有以下步驟:步驟1,其於絕緣性成形體(A)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。
- 一種於絕緣性成形體上具有金屬圖案的成形體之製造方法,其具有以下步驟:步驟1',其於絕緣性成形體(A)上形成底塗層(B)後,於底塗層(B)上形成含有銀粒子之導電性金屬層(M1);步驟2,其藉由將上述導電性金屬層(M1)之一部分去除而將上述導電性金屬層(M1)分離為圖案形成區域之導電性金屬層(PM1)與非圖案形成區域之導電性金屬層(NPM1);步驟3,其藉由電解鍍覆而於上述圖案形成區域之導電性金屬層(PM1)上形成圖案金屬層(PM2);步驟4,其藉由蝕刻液去除上述非圖案形成區域之導電性金屬層(NPM1)。
- 如請求項2所述之成形體之製造方法,其中,於上述步驟2中, 將導電性金屬層(M1)之一部分去除之方法為照射電磁波之方法。
- 如請求項3所述之成形體之製造方法,其中,上述底塗層(B)含有吸收上述電磁波之物質。
- 如請求項1或2所述之成形體之製造方法,其中,上述蝕刻液之有效成分為羧酸及過氧化氫。
- 如請求項2所述之成形體之製造方法,其中,上述銀粒子被高分子分散劑被覆。
- 如請求項6所述之成形體之製造方法,其中,上述底塗層(B)使用具有反應性官能基[X]之樹脂,上述高分子分散劑使用具有反應性官能基[Y]者,使上述反應性官能基[X]與上述反應性官能基[Y]之間形成鍵。
- 如請求項7所述之成形體之製造方法,其中,上述反應性官能基[Y]為含鹼性氮原子之基。
- 如請求項7所述之成形體之製造方法,其中,上述具有反應性官能基[Y]之高分子分散劑為選自由聚伸烷基亞胺、及具有包含氧乙烯單元之聚氧伸烷基結構之聚伸烷基亞胺所組成之群中的1種以上。
- 如請求項7所述之成形體之製造方法,其中,上述反應性官能基[X]為選自由酮基、乙醯乙醯基、環氧基、羧基、N-烷醇基(N-alkylol)、異氰酸酯基、乙烯基、(甲基)丙烯醯基、烯丙基所組成之群中之1種以上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018120976 | 2018-06-26 | ||
JPJP2018-120976 | 2018-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202034754A TW202034754A (zh) | 2020-09-16 |
TWI820152B true TWI820152B (zh) | 2023-11-01 |
Family
ID=68987093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108120678A TWI820152B (zh) | 2018-06-26 | 2019-06-14 | 具有金屬圖案的成形體之製造方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3817526A4 (zh) |
JP (1) | JP6886629B2 (zh) |
KR (1) | KR20210023841A (zh) |
CN (1) | CN112219459A (zh) |
TW (1) | TWI820152B (zh) |
WO (1) | WO2020003879A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210207280A1 (en) * | 2015-05-14 | 2021-07-08 | Lacks Enterprises, Inc. | Method for creating multiple electrical current pathways on a work piece using laser ablation |
JPWO2022097484A1 (zh) * | 2020-11-05 | 2022-05-12 | ||
JP7288230B2 (ja) * | 2020-11-05 | 2023-06-07 | Dic株式会社 | セミアディティブ工法用積層体及びそれを用いたプリント配線板 |
CN116420433A (zh) * | 2020-11-05 | 2023-07-11 | Dic株式会社 | 半加成法用层叠体及使用其的印刷配线板 |
WO2022097481A1 (ja) * | 2020-11-05 | 2022-05-12 | Dic株式会社 | セミアディティブ工法用積層体及びそれを用いたプリント配線板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013084680A (ja) * | 2011-10-06 | 2013-05-09 | Nippon Hyomen Kagaku Kk | 透明導電性薄膜積層体のエッチング液 |
TW201345348A (zh) * | 2012-03-28 | 2013-11-01 | Dainippon Ink & Chemicals | 導電性圖案、電路以及電磁波遮蔽 |
WO2016208672A1 (ja) * | 2015-06-26 | 2016-12-29 | Dic株式会社 | 積層体、成形品、導電性パターン、電子回路及び電磁波シールド |
TW201810298A (zh) * | 2016-08-08 | 2018-03-16 | 日商迪愛生股份有限公司 | 積層體、金屬網格及觸控面板 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3153682B2 (ja) | 1993-08-26 | 2001-04-09 | 松下電工株式会社 | 回路板の製造方法 |
EP0727925A1 (de) * | 1995-02-14 | 1996-08-21 | Lpkf Cad/Cam Systeme Gmbh | Verfahren zur strukturierten Metallisierung der Oberfläche von Substraten |
JP2010080495A (ja) | 2008-09-24 | 2010-04-08 | Hitachi Maxell Ltd | 配線パターンが形成されたプラスチック成形体の製造方法および配線パターンが形成されたプラスチック成形体 |
CN104662198B (zh) * | 2012-09-20 | 2017-06-13 | Dic株式会社 | 导电性材料及其制造方法 |
WO2015029478A1 (ja) * | 2013-08-29 | 2015-03-05 | 日立金属株式会社 | セラミックス回路基板の製造方法 |
-
2019
- 2019-05-30 KR KR1020207035602A patent/KR20210023841A/ko not_active Application Discontinuation
- 2019-05-30 JP JP2020527314A patent/JP6886629B2/ja active Active
- 2019-05-30 WO PCT/JP2019/021513 patent/WO2020003879A1/ja unknown
- 2019-05-30 EP EP19826058.0A patent/EP3817526A4/en active Pending
- 2019-05-30 CN CN201980037567.7A patent/CN112219459A/zh active Pending
- 2019-06-14 TW TW108120678A patent/TWI820152B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013084680A (ja) * | 2011-10-06 | 2013-05-09 | Nippon Hyomen Kagaku Kk | 透明導電性薄膜積層体のエッチング液 |
TW201345348A (zh) * | 2012-03-28 | 2013-11-01 | Dainippon Ink & Chemicals | 導電性圖案、電路以及電磁波遮蔽 |
WO2016208672A1 (ja) * | 2015-06-26 | 2016-12-29 | Dic株式会社 | 積層体、成形品、導電性パターン、電子回路及び電磁波シールド |
TW201810298A (zh) * | 2016-08-08 | 2018-03-16 | 日商迪愛生股份有限公司 | 積層體、金屬網格及觸控面板 |
Also Published As
Publication number | Publication date |
---|---|
TW202034754A (zh) | 2020-09-16 |
EP3817526A1 (en) | 2021-05-05 |
EP3817526A4 (en) | 2022-04-06 |
JPWO2020003879A1 (ja) | 2020-09-24 |
KR20210023841A (ko) | 2021-03-04 |
JP6886629B2 (ja) | 2021-06-16 |
WO2020003879A1 (ja) | 2020-01-02 |
CN112219459A (zh) | 2021-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI820152B (zh) | 具有金屬圖案的成形體之製造方法 | |
JP6213801B2 (ja) | 積層体、成形品、導電性パターン、電子回路及び電磁波シールド | |
TWI820151B (zh) | 印刷配線板之製造方法 | |
TWI808198B (zh) | 印刷配線板之製造方法 | |
TW202000452A (zh) | 印刷配線板用積層體及使用其之印刷配線板 | |
TW202020222A (zh) | 具有金屬圖案的成形體之製造方法 | |
WO2020130071A1 (ja) | プリント配線板の製造方法 | |
JP2016007797A (ja) | 積層体、導電性パターン、電子回路及び積層体の製造方法 | |
JP7371778B2 (ja) | セミアディティブ工法用積層体及びそれを用いたプリント配線板 | |
JP2022126318A (ja) | アンテナ | |
TW202236926A (zh) | 半加成工法用積層體及使用其之印刷配線板 | |
TW202233889A (zh) | 金屬皮膜形成方法 | |
TW202233414A (zh) | 印刷配線板之製造方法 | |
TW202234954A (zh) | 半加成工法用積層體及使用其之印刷配線板 | |
TW202236907A (zh) | 半加成工法用積層體及使用其之印刷配線板、以及該等之製造方法 | |
TW202233415A (zh) | 半加成工法用積層體及使用其之印刷配線板、以及印刷配線板之製造方法 |