TWI819355B - Substrate processing equipment and thermal insulation components - Google Patents
Substrate processing equipment and thermal insulation components Download PDFInfo
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- TWI819355B TWI819355B TW110130339A TW110130339A TWI819355B TW I819355 B TWI819355 B TW I819355B TW 110130339 A TW110130339 A TW 110130339A TW 110130339 A TW110130339 A TW 110130339A TW I819355 B TWI819355 B TW I819355B
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- fiber
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- reinforced resin
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- 238000010438 heat treatment Methods 0.000 claims description 32
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- 229910052782 aluminium Inorganic materials 0.000 description 6
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- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 4
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- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
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- 229920006015 heat resistant resin Polymers 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- 239000004966 Carbon aerogel Substances 0.000 description 1
- 229920003043 Cellulose fiber Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002522 Wood fibre Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
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- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 239000006263 elastomeric foam Substances 0.000 description 1
- 229920006248 expandable polystyrene Polymers 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 229920001821 foam rubber Polymers 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
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- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/027—Thermal properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/304—Insulating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Drying Of Solid Materials (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
本發明提供一種減輕腔室的散熱的技術。基板處理裝置（1）為對基板（9）進行加熱的裝置。基板處理裝置（1）具有腔室（2）、多個支撐銷（3）及熱板（4）。多個支撐銷（3）在腔室（2）內支撐基板（9）。熱板（4）對被多個支撐銷（3）支撐的基板進行加熱。腔室（2）的內側表面由第一纖維強化樹脂層構成。腔室（2）的外側表面由第二纖維強化樹脂層構成。The present invention provides a technology for reducing heat dissipation in a chamber. The substrate processing device (1) is a device that heats the substrate (9). A substrate processing device (1) has a chamber (2), a plurality of support pins (3) and a hot plate (4). A plurality of support pins (3) support the substrate (9) within the chamber (2). The hot plate (4) heats the substrate supported by the plurality of support pins (3). The inner surface of the chamber (2) is composed of a first fiber-reinforced resin layer. The outer surface of the chamber (2) is composed of a second fiber-reinforced resin layer.
Description
本發明涉及一種基板處理裝置。The present invention relates to a substrate processing device.
在製造半導體基板等基板的過程中，實施對基板進行加熱的處理。通常而言，在將基板收容於腔室內的狀態下進行基板的加熱。例如，專利文獻1中所公開的基板熱處理裝置包括熱板、圍繞熱板的框體及向框體的內部噴出加熱空氣的噴出噴嘴。基板熱處理裝置通過將熱板升溫及從噴出噴嘴噴出加熱空氣來加熱基板。 [現有技術文獻] [專利文獻] In the process of manufacturing a substrate such as a semiconductor substrate, a process of heating the substrate is performed. Generally, the substrate is heated while the substrate is housed in the chamber. For example, the substrate heat treatment apparatus disclosed in Patent Document 1 includes a hot plate, a frame surrounding the hot plate, and a blowout nozzle for blowing heated air into the inside of the frame. The substrate heat treatment device heats the substrate by raising the temperature of the hot plate and ejecting heated air from the ejection nozzle. [Prior art documents] [Patent Document]
[專利文獻1]日本專利特開2008-251862號公報[Patent Document 1] Japanese Patent Application Publication No. 2008-251862
[發明所要解決的問題] 且說，通常而言，收容基板的腔室由鋁或不鏽鋼（SUS）等構成。因此，先前的腔室容易散熱，因此腔室內的溫度分佈變得不均勻。有可能在基板中產生加熱不均。因此，謀求一種減輕腔室的散熱的技術。 [Problem to be solved by the invention] In addition, generally speaking, the chamber housing the substrate is made of aluminum, stainless steel (SUS), or the like. Therefore, the previous chamber easily dissipated heat, so the temperature distribution within the chamber became uneven. There is a possibility of uneven heating in the substrate. Therefore, a technology to reduce heat dissipation in the chamber has been sought.
本發明的目的在於提供一種減輕腔室的散熱的技術。 [解決問題的技術手段] The object of the present invention is to provide a technology for reducing heat dissipation in a chamber. [Technical means to solve problems]
第一形態是一種基板處理裝置，其包括：腔室；以及基板支撐部，在所述腔室內支撐基板；並且所述腔室的表面的至少一部分由纖維強化樹脂構成。A first aspect is a substrate processing apparatus including: a chamber; and a substrate support portion that supports the substrate in the chamber; and at least part of the surface of the chamber is made of fiber-reinforced resin.
第二形態是根據第一形態的基板處理裝置，其還包括加熱部，所述加熱部對被所述基板支撐部支撐的所述基板進行加熱。A second aspect is the substrate processing apparatus according to the first aspect, further including a heating unit that heats the substrate supported by the substrate support unit.
第三形態是根據第二形態的基板處理裝置，其中，所述腔室具有：芯層，包含隔熱材；及纖維強化樹脂層，為覆蓋所述芯層的層且包含纖維強化樹脂。A third aspect is the substrate processing apparatus according to the second aspect, wherein the chamber has: a core layer including a heat insulating material; and a fiber-reinforced resin layer covering the core layer and including the fiber-reinforced resin.
第四形態是根據第三形態的基板處理裝置，其中，所述腔室具有：頂板部，與被所述基板支撐部支撐的所述基板的主面相向；及側壁部，包圍被所述基板支撐部支撐的所述基板的側面。A fourth aspect is the substrate processing apparatus according to the third aspect, wherein the chamber has: a ceiling portion facing the main surface of the substrate supported by the substrate support portion; and a side wall portion surrounding the substrate The support portion supports the side surface of the substrate.
第五形態是根據第四形態的基板處理裝置，其中，所述頂板部的表面由纖維強化樹脂構成。A fifth aspect is the substrate processing apparatus according to the fourth aspect, wherein a surface of the top plate portion is made of fiber-reinforced resin.
第六形態是根據第四形態或第五形態的基板處理裝置，其中，所述側壁部的表面由纖維強化樹脂構成。A sixth aspect is the substrate processing apparatus according to the fourth aspect or the fifth aspect, wherein the surface of the side wall portion is made of fiber-reinforced resin.
第七形態是根據第四形態至第六形態中任一形態的基板處理裝置，其中，所述加熱部具有：氣體流路部，位於所述頂板部內或所述側壁部內，構成能夠供高溫氣體通過的流路；及噴射部，與所述氣體流路部連接，將在所述流路中通過的高溫氣體噴射至所述腔室內。A seventh aspect is the substrate processing apparatus according to any one of the fourth aspect to the sixth aspect, wherein the heating part has a gas flow path part located in the top plate part or the side wall part and configured to supply high-temperature gas. and an injection part connected to the gas flow path part for injecting the high-temperature gas passing through the flow path into the chamber.
第八形態是根據第七形態的基板處理裝置，其中，所述氣體流路部位於所述芯層內且被纖維強化樹脂層覆蓋。An eighth aspect is the substrate processing apparatus according to the seventh aspect, wherein the gas flow path portion is located in the core layer and covered with a fiber-reinforced resin layer.
第九形態是根據第一形態至第八形態中任一形態的基板處理裝置，其中，所述腔室具有：第一表面，由第一纖維強化樹脂構成；及第二表面，由與所述第一纖維強化樹脂不同的第二纖維強化樹脂構成。A ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the chamber has: a first surface made of a first fiber-reinforced resin; and a second surface made of the same The first fiber-reinforced resin is composed of a second fiber-reinforced resin different from the first fiber-reinforced resin.
第十形態是根據第一形態至第九形態中任一形態的基板處理裝置，其中，所述腔室的表面的至少一部分由經積層的不同種類的纖維強化樹脂構成。A tenth aspect is the substrate processing apparatus according to any one of the first to ninth aspects, wherein at least part of the surface of the chamber is composed of laminated fiber-reinforced resins of different types.
第十一形態是根據第二形態至第十形態中任一形態的基板處理裝置，其中，所述加熱部具有熱板，所述熱板位於所述腔室內並且對所述基板進行加熱。An eleventh aspect is the substrate processing apparatus according to any one of the second to tenth aspects, wherein the heating unit has a hot plate that is located in the chamber and heats the substrate.
第十二形態是根據第一形態的基板處理裝置，其中，所述腔室形成用於處理基板的處理空間，且具有用於向所述處理空間供氣的通氣口及用於從所述處理空間排氣的排氣口，所述腔室具有隔熱材，所述隔熱材具有面向所述處理空間的表面，所述表面被所述纖維強化樹脂覆蓋。A twelfth aspect is the substrate processing apparatus according to the first aspect, wherein the chamber forms a processing space for processing the substrate, and has a vent for supplying air to the processing space and a vent for removing air from the processing space. An exhaust port for space exhaust, the chamber has a heat insulating material, the heat insulating material has a surface facing the processing space, and the surface is covered with the fiber reinforced resin.
第十三形態是根據第十二形態的基板處理裝置，其還包括減壓部，所述減壓部通過經由所述排氣口來排氣而將所述腔室內減壓。A thirteenth aspect is the substrate processing apparatus according to the twelfth aspect, further including a depressurizing part that depressurizes the chamber by exhausting air through the exhaust port.
第十四形態是根據第十二形態或第十三形態的基板處理裝置，其中，所述腔室具有表面被所述纖維強化樹脂覆蓋的所述隔熱材。A fourteenth aspect is the substrate processing apparatus according to the twelfth aspect or the thirteenth aspect, wherein the chamber has the heat insulating material whose surface is covered with the fiber-reinforced resin.
第十五形態是根據第十四形態的基板處理裝置，其還包括加熱部，所述加熱部對由所述基板支撐部支撐的基板進行加熱。A fifteenth aspect is the substrate processing apparatus according to the fourteenth aspect, further including a heating unit that heats the substrate supported by the substrate support unit.
第十六形態是根據第十五形態的基板處理裝置，其中，所述腔室具有：頂板部，與被所述基板支撐部支撐的所述基板的主面相向；及側壁部，包圍被所述基板支撐部支撐的所述基板的側面；並且所述頂板部或所述側壁部的表面被所述纖維強化樹脂覆蓋。A sixteenth aspect is the substrate processing apparatus according to the fifteenth aspect, wherein the chamber has: a ceiling portion facing the main surface of the substrate supported by the substrate support portion; and a side wall portion surrounded by the substrate supporting portion. The side surface of the substrate supported by the substrate support portion; and the surface of the top plate portion or the side wall portion is covered with the fiber-reinforced resin.
第十七形態是根據第十六形態的基板處理裝置，其具有：氣體流路部，位於所述頂板部內或所述側壁部內，構成能夠供高溫氣體通過的流路；及噴射部，與所述氣體流路部連接，將在所述流路中通過的高溫氣體噴射至所述腔室內。A seventeenth aspect is the substrate processing apparatus according to the sixteenth aspect, which includes: a gas flow path portion located in the top plate portion or the side wall portion to form a flow path through which high-temperature gas can pass; and an injection portion, which is connected to the gas flow path portion. The gas flow path part is connected, and the high-temperature gas passing through the flow path is injected into the chamber.
第十八形態是根據第十二形態至第十七形態中任一形態的基板處理裝置，其中，所述隔熱材具有：第一表面，被第一纖維強化樹脂覆蓋；及第二表面，被與所述第一纖維強化樹脂不同的第二纖維強化樹脂覆蓋。An eighteenth aspect is the substrate processing apparatus according to any one of the twelfth to seventeenth aspects, wherein the heat insulating material has: a first surface covered with a first fiber-reinforced resin; and a second surface, Covered with a second fiber-reinforced resin different from the first fiber-reinforced resin.
第十九形態是根據第十二形態至第十八形態中任一形態的基板處理裝置，其中，所述隔熱材的表面的至少一部分被經積層的不同種類的纖維強化樹脂覆蓋。A nineteenth aspect is the substrate processing apparatus according to any one of the twelfth to eighteenth aspects, wherein at least part of the surface of the heat insulating material is covered with laminated fiber-reinforced resins of different types.
第二十形態是一種隔熱構件，其包括：芯層，包含隔熱材；以及纖維強化樹脂層，為覆蓋所述芯層的表面全部的層且包含纖維強化樹脂。A twentieth aspect is a heat insulating member including: a core layer including a heat insulating material; and a fiber-reinforced resin layer covering the entire surface of the core layer and including a fiber-reinforced resin.
第二十一形態是根據第二十形態的隔熱構件，其中，所述芯層具有第一表面及與所述第一表面不同的第二表面，所述纖維強化樹脂層包括：第一纖維強化樹脂層，為覆蓋所述芯層的第一表面的層且包含第一纖維強化樹脂；以及第二纖維強化樹脂層，為覆蓋所述芯層的第二表面的層且包含與所述第一纖維強化樹脂不同的第二纖維強化樹脂。A twenty-first aspect is the thermal insulation member according to the twentieth aspect, wherein the core layer has a first surface and a second surface different from the first surface, and the fiber-reinforced resin layer includes: a first fiber The reinforced resin layer is a layer covering the first surface of the core layer and includes a first fiber-reinforced resin; and the second fiber-reinforced resin layer is a layer covering the second surface of the core layer and includes the third fiber-reinforced resin. A fiber-reinforced resin is different from a second fiber-reinforced resin.
第二十二形態是根據第二十形態或第二十一形態的隔熱構件，其中，所述纖維強化樹脂層包含經積層的多個層，所述多個層包含相互不同種類的纖維強化樹脂。 [發明的效果] A twenty-second aspect is the heat insulating member according to the twentieth aspect or the twenty-first aspect, wherein the fiber-reinforced resin layer includes a plurality of laminated layers, and the plurality of layers include mutually different types of fiber reinforcements. resin. [Effects of the invention]
根據第一形態至第十一形態的基板處理裝置，通過在表面的至少一部分中使用纖維強化樹脂，可抑制腔室的強度降低，並且實現腔室的輕量化。因此，通過將鋁或不鏽鋼等散熱性高的材料置換為纖維強化樹脂，可減輕腔室的散熱。According to the substrate processing apparatuses of the first to eleventh aspects, by using fiber-reinforced resin for at least part of the surface, it is possible to suppress a decrease in the strength of the chamber and achieve weight reduction of the chamber. Therefore, by replacing materials with high heat dissipation properties such as aluminum or stainless steel with fiber-reinforced resin, heat dissipation in the chamber can be reduced.
根據第三形態的基板處理裝置，由於腔室具有隔熱材，因此可減輕腔室的散熱。另外，由於隔熱材被纖維強化樹脂覆蓋，因此可抑制隔熱材的粉塵等飛散。According to the substrate processing apparatus of the third aspect, since the chamber has the heat insulating material, heat dissipation in the chamber can be reduced. In addition, since the heat insulating material is covered with fiber-reinforced resin, scattering of dust and the like from the heat insulating material can be suppressed.
根據第四形態的基板處理裝置，可利用頂板部覆蓋基板的主面，並且利用側壁部包圍基板的側面。According to the substrate processing apparatus of the fourth aspect, the main surface of the substrate can be covered with the top plate portion, and the side walls of the substrate can be surrounded by the side wall portion.
根據第五形態的基板處理裝置，關於頂板部，通過使用纖維強化樹脂來代替鋁或不鏽鋼，可減輕來自頂板部的散熱。由此，可減輕基板的主面的加熱不均。According to the substrate processing apparatus of the fifth aspect, the fiber-reinforced resin is used for the top plate portion instead of aluminum or stainless steel, thereby reducing heat dissipation from the top plate portion. This can reduce uneven heating on the main surface of the substrate.
根據第六形態的基板處理裝置，關於側壁部，通過使用纖維強化樹脂來代替鋁或不鏽鋼，可減輕來自側壁部的散熱。由此，可減輕基板的加熱不均。According to the substrate processing apparatus of the sixth aspect, fiber-reinforced resin is used for the side wall portion instead of aluminum or stainless steel, so that heat dissipation from the side wall portion can be reduced. This can reduce uneven heating of the substrate.
根據第七形態的基板處理裝置，通過從噴射部向腔室內噴射高溫氣體，可對基板進行加熱。由於氣體流路部配置於頂板部內或側壁部內，因此可將腔室小型化。According to the substrate processing apparatus of the seventh aspect, the substrate can be heated by injecting high-temperature gas from the injector into the chamber. Since the gas flow path portion is disposed in the ceiling portion or the side wall portion, the chamber can be miniaturized.
根據第八形態的基板處理裝置，由於氣體流路部位於包含隔熱材的芯層內，因此可抑制氣體流路部內的高溫氣體的溫度降低。According to the substrate processing apparatus of the eighth aspect, since the gas flow path portion is located in the core layer including the heat insulating material, a temperature drop of the high-temperature gas in the gas flow path portion can be suppressed.
根據第九形態的基板處理裝置，可使腔室的第一表面與第二表面具有不同的特性。According to the substrate processing apparatus of the ninth aspect, the first surface and the second surface of the chamber can have different characteristics.
根據第十形態的基板處理裝置，可使腔室的表面具有不同種類的特性。According to the substrate processing apparatus of the tenth aspect, the surface of the chamber can be provided with different types of characteristics.
根據第十一形態的基板處理裝置，可抑制熱板的熱擴散至腔室外。According to the substrate processing apparatus of the eleventh aspect, the heat of the hot plate can be suppressed from spreading outside the chamber.
根據第十二形態的基板處理裝置，通過利用纖維強化樹脂覆蓋隔熱材，可抑制隔熱材的揚塵。由此，可抑制腔室內被隔熱材的粉塵污染。According to the substrate processing apparatus of the twelfth aspect, dust emission from the heat insulating material can be suppressed by covering the heat insulating material with fiber-reinforced resin. This can prevent the chamber from being contaminated by dust from the heat insulating material.
根據第十三形態的基板處理裝置，可進行減壓乾燥。According to the substrate processing apparatus of the thirteenth aspect, reduced pressure drying can be performed.
根據第十四形態的基板處理裝置，由於腔室具有隔熱材，因此可減輕腔室的散熱。另外，由於隔熱材被纖維強化樹脂覆蓋，因此可抑制隔熱材的粉塵等飛散至腔室內或腔室外。According to the substrate processing apparatus of the fourteenth aspect, since the chamber has the heat insulating material, heat dissipation in the chamber can be reduced. In addition, since the heat insulating material is covered with fiber-reinforced resin, dust and the like on the heat insulating material can be suppressed from scattering into or outside the chamber.
根據第十五形態的基板處理裝置，可在腔室內對被基板支撐部支撐的基板進行加熱。According to the substrate processing apparatus of the fifteenth aspect, the substrate supported by the substrate support part can be heated in the chamber.
根據第十六形態的基板處理裝置，可利用頂板部覆蓋基板的主面，並且利用側壁部包圍基板的側面。通過使用被纖維強化樹脂覆蓋的隔熱材來代替鋁或不鏽鋼，可減輕腔室的散熱。According to the substrate processing apparatus of the sixteenth aspect, the main surface of the substrate can be covered with the top plate portion, and the side walls of the substrate can be surrounded by the side wall portion. Heat dissipation in the chamber can be reduced by using insulation covered with fiber-reinforced resin instead of aluminum or stainless steel.
根據第十七形態的基板處理裝置，通過從噴射部向腔室內噴射高溫氣體，可對基板進行加熱。通過氣體流路部配置於頂板部內或側壁部內，因此可減小腔室。According to the substrate processing apparatus of the seventeenth aspect, the substrate can be heated by injecting high-temperature gas into the chamber from the injection unit. Since the gas flow path portion is disposed in the ceiling portion or the side wall portion, the chamber can be made smaller.
根據第十八形態的基板處理裝置，可使隔熱材的第一表面與第二表面具有不同的特性。According to the substrate processing apparatus of the eighteenth aspect, the first surface and the second surface of the heat insulating material can have different characteristics.
根據第十九形態的基板處理裝置，可使隔熱材的表面具有不同種類的特性。According to the substrate processing apparatus of the nineteenth aspect, the surface of the heat insulating material can be provided with different types of characteristics.
根據第二十形態的隔熱構件，通過利用纖維強化樹脂覆蓋隔熱材，可抑制隔熱材的揚塵。According to the heat insulating member of the twentieth aspect, by covering the heat insulating material with fiber-reinforced resin, dust emission from the heat insulating material can be suppressed.
根據第二十一形態的隔熱構件，可使隔熱材的第一表面與第二表面具有不同的特性。According to the heat insulating member of the twenty-first aspect, the first surface and the second surface of the heat insulating material can have different characteristics.
根據第二十二形態的隔熱構件，可使隔熱材的表面具有不同種類的特性。According to the heat insulating member of the twenty-second aspect, the surface of the heat insulating material can be provided with different types of characteristics.
以下，一邊參照附圖，一邊對本發明的實施方式進行說明。此外，所述實施方式中所記載的構成元件只不過是例示，並非是將本發明的範圍僅限定於它們的主旨。在附圖中，為了容易理解，有時視需要將各部的尺寸或數量加以誇張或簡化而圖示。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the structural elements described in the above-described embodiment are merely examples, and the scope of the present invention is not limited to their gist. In the drawings, in order to facilitate understanding, the size or number of each part may be exaggerated or simplified as necessary and illustrated.
＜1. 第一實施方式＞ 圖1是表示第一實施方式的基板處理裝置1的立體圖。圖2是第一實施方式的基板處理裝置1的剖面圖。在以下的說明中，將鉛垂方向向上簡稱為“上”，將鉛垂方向向下簡稱為“下”。將腔室2的內側簡稱為“內側”，將腔室2的外側簡稱為“外側”。但是，以下所說明的方向是說明各元件的位置關係，並不限定各元件的位置關係。 <1. First Embodiment> FIG. 1 is a perspective view showing the substrate processing apparatus 1 according to the first embodiment. FIG. 2 is a cross-sectional view of the substrate processing apparatus 1 according to the first embodiment. In the following description, the upward direction in the vertical direction is simply called "upper", and the downward direction in the vertical direction is simply called "down". The inside of the chamber 2 is simply called the “inside” and the outside of the chamber 2 is called the “outside”. However, the directions described below are for describing the positional relationship of each element and do not limit the positional relationship of each element.
基板處理裝置1是對基板9進行加熱處理的加熱處理裝置。作為處理對象的基板9例如為面向電子設備的各種被處理基板，具體而言為半導體晶圓、液晶顯示器或電漿顯示器用的玻璃基板、磁碟或光盤用的玻璃或陶瓷基板、有機電致發光（Electroluminescence，EL）用玻璃基板、太陽能電池用的玻璃或矽基板、柔性基板、印刷基板等。The substrate processing device 1 is a heat treatment device that heats the substrate 9 . The substrate 9 to be processed is, for example, various substrates to be processed for electronic devices, specifically semiconductor wafers, glass substrates for liquid crystal displays or plasma displays, glass or ceramic substrates for magnetic disks or optical disks, organic electro-optical substrates, etc. Glass substrates for electroluminescence (EL), glass or silicon substrates for solar cells, flexible substrates, printed substrates, etc.
基板處理裝置1具有腔室2、多個支撐銷3、熱板4及高溫氣體供給部5。以下，對基板處理裝置1的各構成元件進行說明。The substrate processing apparatus 1 includes a chamber 2 , a plurality of support pins 3 , a hot plate 4 and a high-temperature gas supply unit 5 . Each component of the substrate processing apparatus 1 will be described below.
＜腔室＞ 腔室2是收容基板9的框體。腔室2形成用於處理所收容的基板9的處理空間。腔室2例如是長方體狀。腔室2具有頂板部21、側壁部22及底部23。頂板部21是分隔收容空間的上側的隔壁。底部23是分隔收容空間的下側的隔壁。側壁部22是在頂板部21與底部23之間的位置分隔收容空間的隔壁。在基板9被後述的各支撐銷3的上端支撐的情況下，頂板部21的內表面與基板9的主面（最大的面）即上表面相向。另外，側壁部22的內表面與基板9的側面相向。側壁部22包圍基板9的側面。 ＜Chamber＞ The chamber 2 is a frame housing the substrate 9 . The chamber 2 forms a processing space for processing the accommodated substrate 9 . The chamber 2 has a rectangular parallelepiped shape, for example. The chamber 2 has a ceiling part 21, a side wall part 22, and a bottom part 23. The ceiling portion 21 is a partition wall that partitions the upper side of the storage space. The bottom 23 is a partition partitioning the lower side of the storage space. The side wall portion 22 is a partition wall that separates the storage space between the top plate portion 21 and the bottom portion 23 . When the base plate 9 is supported by the upper end of each support pin 3 described later, the inner surface of the top plate portion 21 faces the upper surface which is the main surface (largest surface) of the base plate 9 . In addition, the inner surface of the side wall portion 22 faces the side surface of the substrate 9 . The side wall portion 22 surrounds the side surface of the substrate 9 .
從上方觀察時，頂板部21例如具有矩形狀。從上方觀察時，側壁部22例如具有矩形環狀。頂板部21的下端與側壁部22的上端連結。此外，頂板部21也可載置於側壁部22的上側。在所述情況下，頂板部21或側壁部22可經由襯墊而接觸。通過襯墊而可消除頂板部21與側壁部22之間的間隙。When viewed from above, the top plate portion 21 has, for example, a rectangular shape. When viewed from above, the side wall portion 22 has, for example, a rectangular ring shape. The lower end of the top plate part 21 is connected to the upper end of the side wall part 22. In addition, the top plate part 21 may be placed on the upper side of the side wall part 22. In this case, the top plate portion 21 or the side wall portion 22 may be in contact via the pad. The spacer can eliminate the gap between the top plate part 21 and the side wall part 22.
側壁部22具有開口部221及門部223。開口部221構成使腔室2的內側與外側連通的搬入口。基板9經由開口部221而相對於腔室2內進出。門部223能夠在關閉搬入口的閉位置與打開搬入口的開位置之間移動。如圖2所示，搬送機構的臂100將處理對象的基板9搬入至腔室2中。另外，臂100將進行了加熱處理的基板9從腔室2中搬出。The side wall part 22 has an opening part 221 and a door part 223. The opening 221 constitutes an introduction port that communicates the inside and the outside of the chamber 2 . The substrate 9 can be moved in and out of the chamber 2 through the opening 221 . The door 223 is movable between a closed position for closing the entrance and an open position for opening the entrance. As shown in FIG. 2 , the arm 100 of the transport mechanism carries the substrate 9 to be processed into the chamber 2 . In addition, the arm 100 carries out the heated substrate 9 from the chamber 2 .
＜支撐銷＞ 基板處理裝置1具有多個支撐銷3及銷驅動部31。支撐銷3具有在鉛垂方向上延伸的棒狀。支撐銷3在鉛垂方向上貫通底部23及熱板4。銷驅動部31使各支撐銷3一體地沿著鉛垂方向移動。多個支撐銷3在腔室2內水平地支撐基板9。多個支撐銷3是在腔室2內支撐基板9的基板支撐部的例子。 ＜Support Pin＞ The substrate processing apparatus 1 has a plurality of support pins 3 and pin driving parts 31 . The support pin 3 has a rod shape extending in the vertical direction. The support pin 3 penetrates the bottom 23 and the hot plate 4 in the vertical direction. The pin driving part 31 moves each support pin 3 integrally in the vertical direction. The plurality of support pins 3 supports the substrate 9 horizontally within the chamber 2 . The plurality of support pins 3 are examples of substrate supporting portions that support the substrate 9 in the chamber 2 .
＜熱板＞ 熱板4設置於腔室2內的底部23側。腔室2圍繞熱板4。熱板4在內部具有加熱器（熱源）。熱板是加熱部的例子。 ＜Hot plate＞ The hot plate 4 is provided on the bottom 23 side of the chamber 2 . Chamber 2 surrounds hot plate 4 . The hot plate 4 has a heater (heat source) inside. A hot plate is an example of a heating section.
腔室2的底部23及熱板4具有在厚度方向上貫通的多個貫通孔。各支撐銷3被插通至底部23及熱板4的貫通孔內。The bottom 23 of the chamber 2 and the hot plate 4 have a plurality of through holes penetrating in the thickness direction. Each support pin 3 is inserted into the through hole of the bottom 23 and the hot plate 4 .
＜高溫氣體供給部＞ 圖3是表示高溫氣體供給部5的圖。高溫氣體供給部5是向腔室2內供給高溫氣體的裝置。高溫氣體供給部5具有多個氣體流路部51、多個噴射部53、加熱器55及供氣部57。 ＜High temperature gas supply unit＞ FIG. 3 is a diagram showing the high-temperature gas supply unit 5 . The high-temperature gas supply unit 5 is a device that supplies high-temperature gas into the chamber 2 . The high-temperature gas supply part 5 has a plurality of gas flow path parts 51 , a plurality of injection parts 53 , a heater 55 and a gas supply part 57 .
氣體流路部51構成能夠供高溫氣體通過的流路。氣體流路部51被組入至頂板部21中。氣體流路部51位於頂板部21內。噴射部53與氣體流路部51連接。噴射部53形成將在氣體流路部51的流路中流動的高溫氣體噴射至腔室2內的噴射口。噴射口相當於對腔室2內供氣的通氣口。噴射部53是在頂板部21的內表面形成開口的筒狀的構件。噴射部53位於頂板部21。The gas flow path portion 51 constitutes a flow path through which high-temperature gas can pass. The gas flow path portion 51 is incorporated into the top plate portion 21 . The gas flow path portion 51 is located in the top plate portion 21 . The injection part 53 is connected to the gas flow path part 51 . The injection part 53 forms an injection port for injecting the high-temperature gas flowing in the flow path of the gas flow path part 51 into the chamber 2 . The injection port is equivalent to a vent that supplies air to the chamber 2 . The injection part 53 is a cylindrical member with an opening formed on the inner surface of the top plate part 21 . The injection part 53 is located on the top plate part 21 .
高溫氣體供給部5包括多個（在本例中為5組）氣體流路部51與噴射部53的組。但是，高溫氣體供給部5也可僅包括一組氣體流路部51與噴射部53的組。The high-temperature gas supply part 5 includes a plurality (five sets in this example) of sets of gas flow path parts 51 and injection parts 53 . However, the high-temperature gas supply part 5 may include only one set of the gas flow path part 51 and the injection part 53 .
各氣體流路部51的上游側的端部露出於頂板部21外，並與加熱器55連結。加熱器55例如是管線式加熱器。噴射部53經由氣體流路部51而與加熱器55連接。供氣部57向加熱器55供給氣體。供氣部57例如具有風扇。加熱器55對從供氣部57供給的氣體進行加熱。由加熱器55加熱過的氣體在各氣體流路部51中通過而從各噴射部53向腔室2噴射。由此，腔室2內的溫度上升，因此收容於腔室2內的基板9被加熱。高溫氣體供給部5是加熱部的例子。The upstream end of each gas flow path portion 51 is exposed outside the top plate portion 21 and is connected to the heater 55 . The heater 55 is, for example, a pipeline heater. The injection unit 53 is connected to the heater 55 via the gas flow path unit 51 . The gas supply unit 57 supplies gas to the heater 55 . The air supply unit 57 has a fan, for example. The heater 55 heats the gas supplied from the gas supply part 57 . The gas heated by the heater 55 passes through each gas flow path portion 51 and is injected into the chamber 2 from each injection portion 53 . As a result, the temperature in the chamber 2 rises, and therefore the substrate 9 accommodated in the chamber 2 is heated. The high-temperature gas supply part 5 is an example of a heating part.
各噴射部53可均勻地分散配置於頂板部21的內表面。由此，可抑制高溫氣體在腔室2內偏移，因此可抑制基板9的加熱不均。Each injection part 53 can be evenly dispersed and arranged on the inner surface of the top plate part 21 . This can suppress the high-temperature gas from being deflected in the chamber 2, thereby suppressing uneven heating of the substrate 9.
如圖2所示，腔室2可具有與腔室2外連通的排氣口225。腔室2內的氣體可經由排氣口225而排出至外部。另外，排氣口225也可與供氣部57連通。在所述情況下，可使經由排氣口225而從腔室2內排出的氣體再次返回至腔室2。As shown in FIG. 2 , the chamber 2 may have an exhaust port 225 communicating with the outside of the chamber 2 . The gas in the chamber 2 can be discharged to the outside through the exhaust port 225 . In addition, the exhaust port 225 may be connected to the air supply part 57 . In this case, the gas exhausted from the chamber 2 through the exhaust port 225 can be returned to the chamber 2 again.
在於基板處理裝置1中對基板9進行加熱處理的情況下，首先，通過門部223移動至開位置來開放開口部221。在開口部221被開放的狀態下，搬送機構的臂100將以水平姿勢支撐的基板9插入至腔室2內，並且配置於熱板4的上方。銷驅動部31通過使各支撐銷3上升而從臂100抬起基板9。然後，臂100退避至腔室2外。當臂100退避時，銷驅動部31通過使各支撐銷3下降而將基板9配置於與熱板4接近的加熱位置。在將基板9配置於加熱位置的狀態下，使熱板4升溫。於是，基板9通過熱板4的放射熱而被加熱。另外，高溫氣體供給部5向腔室2內供給高溫氣體。基板9通過所述高溫氣體而被加熱。When the substrate 9 is heat-processed in the substrate processing apparatus 1, first, the opening 221 is opened by moving the door 223 to the open position. With the opening 221 opened, the arm 100 of the transport mechanism inserts the substrate 9 supported in a horizontal posture into the chamber 2 and is arranged above the hot plate 4 . The pin driving part 31 lifts the substrate 9 from the arm 100 by raising each support pin 3 . The arm 100 then retreats outside the chamber 2 . When the arm 100 is retracted, the pin driving part 31 lowers each support pin 3 to arrange the substrate 9 at a heating position close to the hot plate 4 . With the substrate 9 placed in the heating position, the temperature of the hot plate 4 is raised. Then, the substrate 9 is heated by the radiation heat of the hot plate 4 . In addition, the high-temperature gas supply unit 5 supplies high-temperature gas into the chamber 2 . The substrate 9 is heated by the high-temperature gas.
圖4是表示腔室2的一部分的剖面圖。腔室2具有芯層25、第一纖維強化樹脂層26及第二纖維強化樹脂層27。FIG. 4 is a cross-sectional view showing a part of the chamber 2 . The chamber 2 has a core layer 25 , a first fiber-reinforced resin layer 26 and a second fiber-reinforced resin layer 27 .
芯層25例如包含隔熱材。隔熱材例如是纖維系隔熱材、發泡系隔熱材、氣凝膠、煆制氧化矽、真空隔熱材。纖維系隔熱材例如是玻璃棉、石棉、纖維素纖維、碳化軟木、羊毛隔熱材、木質纖維等。發泡系隔熱材例如是聚氨酯泡沫、酚醛泡沫、聚苯乙烯泡沫、串珠法聚苯乙烯（可發性聚苯乙烯（Expandable Polystyrene，EPS））、發泡橡膠（柔性彈性泡沫（Flexible Elastomeric Foam，FEF））、擠出法聚苯乙烯（擠塑聚苯乙烯（Extruded Polystyrene，XPS））。氣凝膠例如是矽氣凝膠、碳氣凝膠、氧化鋁氣凝膠。The core layer 25 contains, for example, a heat insulating material. Examples of heat insulating materials include fiber based heat insulating materials, foam based heat insulating materials, aerogels, fumed silica, and vacuum heat insulating materials. Examples of fiber-based insulation materials include glass wool, asbestos, cellulose fiber, carbonized cork, wool insulation materials, and wood fibers. Examples of foam-based insulation materials include polyurethane foam, phenolic foam, polystyrene foam, beaded polystyrene (Expandable Polystyrene (EPS)), and foam rubber (Flexible Elastomeric Foam). , FEF)), extruded polystyrene (Extruded Polystyrene (XPS)). Examples of aerogels include silicon aerogels, carbon aerogels, and alumina aerogels.
第一纖維強化樹脂層26及第二纖維強化樹脂層27由纖維強化樹脂（Fiber Reinforced Plastics，FRP）構成。纖維強化樹脂是在樹脂中複合纖維來提高強度的強化樹脂。纖維強化樹脂可通過使樹脂含浸於片狀的纖維布中來製作。樹脂是熱硬化性樹脂或熱塑性樹脂。熱硬化性樹脂例如是環氧、乙烯酯、苯酚、不飽和聚酯、聚醯亞胺、雙馬來醯亞胺。熱塑性樹脂例如是聚烯烴、聚醯胺、聚碳酸酯、聚苯硫醚、聚醚醚酮。纖維例如是玻璃纖維、碳纖維、玄武岩纖維、硼纖維、芳族聚醯胺纖維、聚乙烯纖維、聚對苯苯并雙噁唑纖維。The first fiber reinforced resin layer 26 and the second fiber reinforced resin layer 27 are composed of fiber reinforced resin (Fiber Reinforced Plastics, FRP). Fiber-reinforced resin is a reinforced resin that combines fibers in the resin to increase its strength. Fiber-reinforced resin can be produced by impregnating a sheet-shaped fiber cloth with resin. The resin is thermosetting resin or thermoplastic resin. Examples of thermosetting resins include epoxy, vinyl ester, phenol, unsaturated polyester, polyimide, and bismaleimide. Examples of thermoplastic resins include polyolefin, polyamide, polycarbonate, polyphenylene sulfide, and polyether ether ketone. Examples of fibers include glass fiber, carbon fiber, basalt fiber, boron fiber, aromatic polyamide fiber, polyethylene fiber, and polyparabenzobisoxazole fiber.
通過在腔室2的表面使用纖維強化樹脂，可抑制腔室2的強度降低，並且實現腔室2的輕量化。通過將鋁或不鏽鋼等散熱性相對較高的材料置換為纖維強化樹脂，可減輕腔室2的散熱。By using fiber-reinforced resin on the surface of the chamber 2 , the strength of the chamber 2 can be suppressed and the weight of the chamber 2 can be reduced. By replacing materials with relatively high heat dissipation properties, such as aluminum or stainless steel, with fiber-reinforced resin, heat dissipation in the chamber 2 can be reduced.
第一纖維強化樹脂層26位於芯層25的內側。第二纖維強化樹脂層27位於芯層25的外側。即，腔室2的頂板部21、側壁部22及底部23從腔室2的內側朝向外側依序具有第一纖維強化樹脂層26、芯層25、第二纖維強化樹脂層27。如上所述，腔室2由表面被纖維強化樹脂（第一纖維強化樹脂層26、第二纖維強化樹脂層27）覆蓋的隔熱材（芯層25）構成。The first fiber-reinforced resin layer 26 is located inside the core layer 25 . The second fiber-reinforced resin layer 27 is located outside the core layer 25 . That is, the ceiling portion 21 , the side wall portion 22 and the bottom 23 of the chamber 2 have the first fiber-reinforced resin layer 26 , the core layer 25 and the second fiber-reinforced resin layer 27 in this order from the inside to the outside of the chamber 2 . As described above, the chamber 2 is composed of a heat insulating material (core layer 25 ) whose surface is covered with fiber-reinforced resin (first fiber-reinforced resin layer 26 , second fiber-reinforced resin layer 27 ).
＜第一纖維強化樹脂層＞ 第一纖維強化樹脂層26具有第一內部層261及第一表面層263。第一內部層261位於較芯層25更靠內側。第一內部層261覆蓋芯層25的內表面。第一表面層263位於較第一內部層261更靠內側。第一表面層263覆蓋第一內部層261的內表面。第一表面層263是腔室2的內表面。即，第一表面層263覆蓋面向腔室2所形成的處理空間的芯層25（隔熱材）的表面。第一表面層263構成露出至腔室2所形成的處理空間的芯層25（隔熱材）的表面。第一內部層261及第一表面層263由相互不同種類的纖維強化樹脂構成。即，腔室2的內側表面由在厚度方向上積層的多種纖維強化樹脂構成。 <First fiber-reinforced resin layer> The first fiber-reinforced resin layer 26 has a first inner layer 261 and a first surface layer 263 . The first inner layer 261 is located further inside than the core layer 25 . The first inner layer 261 covers the inner surface of the core layer 25 . The first surface layer 263 is located inside the first inner layer 261 . The first surface layer 263 covers the inner surface of the first inner layer 261 . The first surface layer 263 is the inner surface of the chamber 2 . That is, the first surface layer 263 covers the surface of the core layer 25 (heat insulating material) facing the processing space formed in the chamber 2 . The first surface layer 263 constitutes the surface of the core layer 25 (heat insulating material) exposed to the processing space formed by the chamber 2 . The first inner layer 261 and the first surface layer 263 are made of different types of fiber-reinforced resins. That is, the inner surface of the chamber 2 is composed of a plurality of types of fiber-reinforced resins laminated in the thickness direction.
＜第二纖維強化樹脂層＞ 第二纖維強化樹脂層27具有第二內部層271及第二表面層273。第二內部層271位於較芯層25更靠外側。第二內部層271覆蓋芯層25的外表面。第二表面層273位於較第二內部層271更靠外側。第二表面層273覆蓋第二內部層271的外表面。第二表面層273是腔室2的外表面。第二內部層271及第二表面層273由相互不同種類的纖維強化樹脂構成。即，腔室2的外側表面由在厚度方向上積層的多種纖維強化樹脂構成。 <Second fiber-reinforced resin layer> The second fiber-reinforced resin layer 27 has a second inner layer 271 and a second surface layer 273 . The second inner layer 271 is located further outside than the core layer 25 . The second inner layer 271 covers the outer surface of the core layer 25 . The second surface layer 273 is located further outside than the second inner layer 271 . The second surface layer 273 covers the outer surface of the second inner layer 271 . The second surface layer 273 is the outer surface of the chamber 2 . The second inner layer 271 and the second surface layer 273 are made of fiber-reinforced resins of different types. That is, the outer surface of the chamber 2 is composed of a plurality of types of fiber-reinforced resins laminated in the thickness direction.
在加熱處理時，與第二纖維強化樹脂層27相比，第一纖維強化樹脂層26暴露於高溫下。因此，第一纖維強化樹脂層26可由熱膨脹率低於第二纖維強化樹脂層27的纖維強化樹脂的纖維強化樹脂構成。通過由熱膨脹率低的纖維強化樹脂構成暴露於高溫下的第一纖維強化樹脂層26，可抑制由加熱處理引起的腔室2的變形。During the heat treatment, the first fiber-reinforced resin layer 26 is exposed to a higher temperature than the second fiber-reinforced resin layer 27 . Therefore, the first fiber-reinforced resin layer 26 may be composed of a fiber-reinforced resin having a lower thermal expansion coefficient than the fiber-reinforced resin of the second fiber-reinforced resin layer 27 . By configuring the first fiber-reinforced resin layer 26 exposed to high temperature from a fiber-reinforced resin with a low thermal expansion coefficient, deformation of the chamber 2 caused by heat treatment can be suppressed.
第一內部層261及第一表面層263各自中所使用的樹脂可不同。第一表面層263可包含耐化學品性的等級高於第一內部層261所具有的樹脂的樹脂（耐化學品性樹脂）。耐化學品性樹脂例如是苯酚、不飽和聚酯、聚苯硫醚。第一內部層261也可包含耐燃性的等級高於第一表面層263所具有的樹脂的樹脂（阻燃性樹脂）。阻燃性樹脂例如是苯酚。另外，第一內部層261也可包含耐熱性的等級高於第一表面層263的樹脂的樹脂（耐熱性樹脂）。耐熱性樹脂例如是聚醯亞胺、雙馬來醯亞胺、聚醯胺、聚苯硫醚、聚醚醚酮。通過由包含耐性不同的樹脂的多種纖維強化樹脂構成腔室2的表面，可使腔室2的表面具有不同種類的耐性（特性）。The resin used in each of the first inner layer 261 and the first surface layer 263 may be different. The first surface layer 263 may include a resin with a higher level of chemical resistance than the resin of the first inner layer 261 (chemical-resistant resin). Examples of chemical-resistant resins include phenol, unsaturated polyester, and polyphenylene sulfide. The first inner layer 261 may include a resin (flame-retardant resin) having a higher flame resistance level than the resin included in the first surface layer 263 . The flame retardant resin is, for example, phenol. In addition, the first inner layer 261 may contain a resin (heat-resistant resin) having a higher heat resistance level than the resin of the first surface layer 263 . Examples of the heat-resistant resin include polyimide, bismaleimide, polyamide, polyphenylene sulfide, and polyetheretherketone. By configuring the surface of the chamber 2 with a plurality of types of fiber-reinforced resins including resins with different resistances, the surface of the chamber 2 can be provided with different kinds of resistances (characteristics).
第一表面層263與第一內部層261的纖維強化樹脂相比，裝飾性的等級可設得更高。第二表面層273也可由裝飾性的等級高於第二內部層271的纖維強化樹脂的纖維強化樹脂構成。通過使第一表面層263及第二表面層273的裝飾性的等級高，可抑制從腔室2產生粉塵。The first surface layer 263 may have a higher decorative level than the fiber-reinforced resin of the first inner layer 261 . The second surface layer 273 may also be composed of a fiber-reinforced resin with a higher decorative level than the fiber-reinforced resin of the second inner layer 271 . By setting the decorative level of the first surface layer 263 and the second surface layer 273 to be high, the generation of dust from the chamber 2 can be suppressed.
第一表面層263例如是利用玄武岩纖維強化耐化學品性樹脂而成的纖維強化樹脂。第一內部層261例如是利用玻璃纖維強化阻燃性樹脂而成的纖維強化樹脂。第二表面層273例如是利用玻璃纖維強化耐化學品性樹脂而成的纖維強化樹脂。第二內部層271例如是利用碳纖維強化阻燃性樹脂而成的纖維強化樹脂。The first surface layer 263 is, for example, a fiber-reinforced resin made of basalt fiber-reinforced chemical-resistant resin. The first inner layer 261 is, for example, a fiber-reinforced resin made of glass fiber-reinforced flame-retardant resin. The second surface layer 273 is, for example, a fiber-reinforced resin made of glass fiber-reinforced chemical-resistant resin. The second inner layer 271 is, for example, a fiber-reinforced resin made of carbon fiber-reinforced flame-retardant resin.
可使第一表面層263薄於第一內部層261。另外，可使第二表面層273薄於第二內部層271。通過使第一表面層263或第二表面層273薄，可抑制腔室2的材料費。The first surface layer 263 can be made thinner than the first inner layer 261 . In addition, the second surface layer 273 can be made thinner than the second inner layer 271 . By making the first surface layer 263 or the second surface layer 273 thin, the material cost of the chamber 2 can be suppressed.
芯層25被第一纖維強化樹脂層26及第二纖維強化樹脂層27覆蓋。即，隔熱材被纖維強化樹脂層覆蓋。由此，可抑制隔熱材揚塵。因此，可抑制由隔熱材的粉塵引起的基板處理裝置1的污染。芯層25的外表面全部可被纖維強化樹脂的層覆蓋。即，芯層25中，不僅兩側的主面，除兩側的主面以外的側面也可被纖維強化樹脂的層覆蓋。在所述情況下，與利用纖維強化樹脂的層覆蓋芯層25的表面一部分的情況相比，可抑制芯層25中所含的隔熱材的揚塵。The core layer 25 is covered with a first fiber-reinforced resin layer 26 and a second fiber-reinforced resin layer 27 . That is, the heat insulating material is covered with the fiber-reinforced resin layer. This can suppress dust from the heat insulating material. Therefore, contamination of the substrate processing apparatus 1 caused by dust of the heat insulating material can be suppressed. The entire outer surface of the core layer 25 may be covered with a layer of fiber-reinforced resin. That is, in the core layer 25 , not only the main surfaces on both sides but also the side surfaces other than the main surfaces on both sides may be covered with the fiber-reinforced resin layer. In this case, compared with a case where a part of the surface of the core layer 25 is covered with a layer of fiber-reinforced resin, dust emission from the heat insulating material contained in the core layer 25 can be suppressed.
腔室2的一部分（例如，頂板部21、側壁部22或底部23）可構成為能夠更換。在基板處理裝置1設置於潔淨室內的情況下，例如為了更換作為腔室2的一部分的頂板部21，假設僅將頂板部21帶入潔淨室內。在所述情況下，通過將頂板部21設為包含隔熱材的芯層25的外表面全部被纖維強化樹脂的層覆蓋的隔熱構件，可抑制由揚塵引起的潔淨室內的污染。A part of the chamber 2 (for example, the top plate part 21, the side wall part 22, or the bottom part 23) may be configured to be replaceable. When the substrate processing apparatus 1 is installed in a clean room, for example, in order to replace the ceiling portion 21 which is a part of the chamber 2 , it is assumed that only the ceiling portion 21 is brought into the clean room. In this case, by forming the top plate portion 21 as a heat insulating member in which the entire outer surface of the core layer 25 including the heat insulating material is covered with a layer of fiber-reinforced resin, contamination in the clean room caused by flying dust can be suppressed.
腔室2具有隔熱材，由此可抑制熱板4的熱及高溫氣體供給部5所供給的氣體的熱擴散至腔室2外。The chamber 2 has a heat insulating material, thereby preventing the heat of the hot plate 4 and the heat of the gas supplied from the high-temperature gas supply unit 5 from diffusing outside the chamber 2 .
圖5是表示組入有氣體流路部51的頂板部21的剖面圖。氣體流路部51也可配置於芯層25。即，氣體流路部51也可配置於第一纖維強化樹脂層26與第二纖維強化樹脂層27之間。各氣體流路部51例如也可分別配置於預先設置於芯層25的內側面的多個收容槽251中（參照圖4及圖5）。多個收容槽251是預先設置於芯層25（在本例中為散熱材）的其中一主面上的凹狀的部分。其中一主面例如是被第一纖維強化樹脂層26覆蓋的面。FIG. 5 is a cross-sectional view showing the top plate portion 21 in which the gas flow path portion 51 is incorporated. The gas flow path portion 51 may be arranged in the core layer 25 . That is, the gas flow path portion 51 may be disposed between the first fiber-reinforced resin layer 26 and the second fiber-reinforced resin layer 27 . For example, each gas flow path portion 51 may be disposed in a plurality of receiving grooves 251 provided in advance on the inner surface of the core layer 25 (see FIGS. 4 and 5 ). The plurality of receiving grooves 251 are concave portions pre-disposed on one of the main surfaces of the core layer 25 (heat dissipation material in this example). One of the main surfaces is, for example, the surface covered by the first fiber-reinforced resin layer 26 .
在將氣體流路部51收容於收容槽251內的情況下，例如，可在將氣體流路部51與噴射部53設置於收容槽251內的狀態下，在芯層25的其中一主面上形成第一內部層261。第一內部層261例如可通過模具成形來形成。具體而言，芯層25與用於形成第一內部層261的纖維布重疊配置於未圖示的模具內。然後，通過將用於形成第一內部層261的樹脂流入至模具內，樹脂含浸於纖維布中。然後，通過使樹脂硬化而在芯層25的其中一主面上形成第一內部層261。在形成第一內部層261時，也可使樹脂進入至芯層25的收容槽251內。在所述情況下，如圖5所示，通過利用樹脂填埋收容槽251的內表面與氣體流路部51的外表面的間隙，氣體流路部51在收容槽251內被固定。在形成第一內部層261之後，形成第一表面層263。關於第二纖維強化樹脂層27，也與第一纖維強化樹脂層26同樣地，能夠形成於芯層25的另一主面上。When the gas flow path part 51 is accommodated in the accommodation groove 251, for example, in a state where the gas flow path part 51 and the injection part 53 are installed in the accommodation groove 251, one of the main surfaces of the core layer 25 may be A first inner layer 261 is formed on the top. The first inner layer 261 may be formed by mold forming, for example. Specifically, the core layer 25 and the fiber cloth used to form the first inner layer 261 are overlapped and arranged in a mold (not shown). Then, the resin for forming the first inner layer 261 is poured into the mold, and the fiber cloth is impregnated with the resin. Then, the first inner layer 261 is formed on one of the main surfaces of the core layer 25 by hardening the resin. When forming the first inner layer 261 , the resin may also enter the receiving groove 251 of the core layer 25 . In this case, as shown in FIG. 5 , the gap between the inner surface of the housing groove 251 and the outer surface of the gas flow path part 51 is filled with resin, so that the gas flow path part 51 is fixed in the housing groove 251 . After the first inner layer 261 is formed, the first surface layer 263 is formed. The second fiber-reinforced resin layer 27 can also be formed on the other main surface of the core layer 25 in the same manner as the first fiber-reinforced resin layer 26 .
通過將氣體流路部51組入至包含隔熱材的芯層25內，可抑制氣體流路部51內的高溫氣體的溫度降低。By incorporating the gas flow path portion 51 into the core layer 25 including a heat insulating material, the temperature drop of the high-temperature gas in the gas flow path portion 51 can be suppressed.
此外，基板處理裝置1也可在腔室2內設置供給處理液的細霧或處理液的蒸氣（熏煙）的供給部。在所述情況下，也可在腔室2外設置貯存處理液的罐及加熱來自罐的處理液的加熱部等。另外，使來自罐的處理液通過的流路部也可與氣體流路部51同樣地組入至芯層25內。In addition, the substrate processing apparatus 1 may be provided with a supply unit for supplying fine mist of the processing liquid or vapor (smoke) of the processing liquid in the chamber 2 . In this case, a tank for storing the processing liquid, a heating unit for heating the processing liquid from the tank, etc. may be provided outside the chamber 2 . In addition, the flow path portion through which the processing liquid from the tank passes may be incorporated into the core layer 25 in the same manner as the gas flow path portion 51 .
＜2. 第二實施方式＞ 其次，對第二實施方式進行說明。此外，在以後的說明中，關於具有與已說明的元件相同的功能的元件，標注相同的符號或追加有字母的符號，並且存在省略詳細說明的情況。 <2. Second Embodiment> Next, the second embodiment will be described. In addition, in the following description, elements having the same functions as those already described will be assigned the same symbols or symbols with letters added, and detailed description may be omitted.
圖6是表示第二實施方式的基板處理裝置1A的概略圖。基板處理裝置1A是通過減壓而使基板9乾燥的減壓乾燥裝置。基板處理裝置1A具有腔室2A、多個支撐銷3、減壓部61及供氣部57。FIG. 6 is a schematic diagram showing a substrate processing apparatus 1A according to the second embodiment. The substrate processing apparatus 1A is a reduced pressure drying apparatus that dries the substrate 9 by reducing pressure. The substrate processing apparatus 1A has a chamber 2A, a plurality of support pins 3 , a pressure reducing part 61 and a gas supply part 57 .
腔室2A形成用於處理基板9的處理空間。多個支撐銷3在腔室2A內以水平姿勢支撐基板9。腔室2A具有用於向處理空間供氣的通氣口224及用於從處理空間排氣的排氣口225。排氣口225與減壓部61連接。通氣口224與供氣部57連接。The chamber 2A forms a processing space for processing the substrate 9 . The plurality of support pins 3 supports the substrate 9 in a horizontal posture within the chamber 2A. The chamber 2A has a vent 224 for supplying air to the processing space and an exhaust port 225 for exhausting air from the processing space. The exhaust port 225 is connected to the pressure reducing part 61 . The vent 224 is connected to the air supply part 57 .
減壓部61產生用於經由排氣口225而從腔室2A內排出氣體的負壓。減壓部61例如具有真空泵。供氣部57經由通氣口224而向腔室2A內供給氣體。供氣部57例如具有風扇。另外，供氣部57也可具有切換閥，所述切換閥在使通氣口224與外部空氣連通的狀態和與外部空氣阻斷的狀態之間進行切換。The pressure reducing unit 61 generates negative pressure for discharging gas from the chamber 2A through the exhaust port 225 . The pressure reducing part 61 has a vacuum pump, for example. The gas supply unit 57 supplies gas into the chamber 2A via the vent 224 . The air supply unit 57 has a fan, for example. In addition, the air supply unit 57 may have a switching valve that switches the vent port 224 between a state in which the vent port 224 is connected to the outside air and a state in which it is blocked from the outside air.
在對腔室2A進行減壓的情況下，在供氣部57停止供氣的狀態下，減壓部61向腔室2A內排出氣體。另外，在使腔室2A內的壓力恢復至大氣壓的情況下，在減壓部61停止排氣的狀態下，供氣部57進行供氣。When depressurizing the chamber 2A, the depressurizing part 61 discharges gas into the chamber 2A while the gas supply part 57 stops supplying gas. In addition, when the pressure in the chamber 2A is returned to the atmospheric pressure, the air supply unit 57 supplies air while the decompression unit 61 stops exhausting air.
腔室2A與第一實施方式的腔室2同樣地，由表面被纖維強化樹脂覆蓋的隔熱材構成。因此，可對腔室2A的內側與外側進行隔熱，因此可抑制腔室2A周邊的溫度影響腔室2A內的基板9的處理（減壓乾燥處理）。另外，隔熱材的表面被纖維強化樹脂覆蓋。因此，即使在腔室2A內進行了供排氣、或者減壓及升壓，也可抑制隔熱材的揚塵，因此可抑制基板9被隔熱材的粉塵污染。Like the chamber 2 of the first embodiment, the chamber 2A is composed of a heat insulating material whose surface is covered with fiber-reinforced resin. Therefore, the inside and outside of the chamber 2A can be thermally insulated, so that the temperature around the chamber 2A can be suppressed from affecting the processing (reduced pressure drying process) of the substrate 9 in the chamber 2A. In addition, the surface of the heat insulating material is covered with fiber-reinforced resin. Therefore, even if supply and exhaust, or pressure reduction and pressure increase are performed in the chamber 2A, dust emission from the heat insulating material can be suppressed, and contamination of the substrate 9 by dust from the heat insulating material can be suppressed.
基板處理裝置1A也可在腔室2A內包括熱板4等加熱部。基板處理裝置1A也可通過加熱部而在減壓中對基板9進行加熱。The substrate processing apparatus 1A may include a heating unit such as the hot plate 4 in the chamber 2A. The substrate processing apparatus 1A may heat the substrate 9 under reduced pressure using a heating unit.
＜3. 變形例＞ 以上，對實施方式進行了說明，但本發明並不限定於如上所述的實施方式，能夠進行各種變形。 ＜3. Modifications＞ The embodiments have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications are possible.
銷驅動部31也可通過使各支撐銷3的上端移動至較熱板4的上表面更靠下側而將基板9載置於熱板4上。而且，也可在基板9被熱板4支撐的狀態下加熱基板9。在所述情況下，熱板4作為基板支撐部發揮功能。The pin driving part 31 may place the substrate 9 on the hot plate 4 by moving the upper end of each support pin 3 below the upper surface of the hot plate 4 . Furthermore, the substrate 9 may be heated while the substrate 9 is supported by the hot plate 4 . In this case, the hot plate 4 functions as a substrate support portion.
基板支撐部也可為保持基板9的周緣部的支撐件。The substrate support portion may be a support that holds the peripheral edge portion of the substrate 9 .
氣體流路部51被組入至頂板部21中，但也可組入至側壁部22中。The gas flow path portion 51 is incorporated into the top plate portion 21 , but may also be incorporated into the side wall portion 22 .
第一纖維強化樹脂層26由兩個層（第一內部層261及第一表面層263）構成，但也可由單一的層或三個以上的層構成。關於第二纖維強化樹脂層27，也同樣如此。The first fiber-reinforced resin layer 26 is composed of two layers (the first inner layer 261 and the first surface layer 263), but may be composed of a single layer or three or more layers. The same is true for the second fiber-reinforced resin layer 27 .
第一纖維強化樹脂層26及第二纖維強化樹脂層27也可由相同的纖維強化樹脂構成。The first fiber-reinforced resin layer 26 and the second fiber-reinforced resin layer 27 may be made of the same fiber-reinforced resin.
腔室2的一個面可由不同種類的纖維強化樹脂構成。例如，在一個第一內部層261中，一部分部位與其以外的部位可分別由相互不同種類的纖維強化樹脂構成。One side of the chamber 2 can be composed of different types of fiber-reinforced resins. For example, in one first inner layer 261, some parts and other parts may be made of fiber-reinforced resins of different types.
基板處理裝置1也可構成為能夠同時對多個基板9進行加熱處理。基板處理裝置1也可在腔室2內包括能夠同時支撐多個基板9的基板支撐部。The substrate processing apparatus 1 may be configured to heat-process a plurality of substrates 9 simultaneously. The substrate processing apparatus 1 may include a substrate support part capable of supporting a plurality of substrates 9 simultaneously in the chamber 2 .
基板處理裝置1並非必須包括熱板4與高溫氣體供給部5此兩者作為加熱部。基板處理裝置1也可僅包括熱板4或高溫氣體供給部5中的任一者。另外，基板處理裝置1也可包括利用與熱板4及高溫氣體供給部5不同的方法來加熱基板9的結構（例如燈等）。The substrate processing apparatus 1 does not necessarily include both the hot plate 4 and the high-temperature gas supply unit 5 as heating units. The substrate processing apparatus 1 may include only either the hot plate 4 or the high-temperature gas supply unit 5 . In addition, the substrate processing apparatus 1 may include a structure (for example, a lamp) that heats the substrate 9 using a method different from the hot plate 4 and the high-temperature gas supply unit 5 .
也可在基板處理裝置1的腔室2內設置供給處理液的細霧或處理液的蒸氣（熏煙）的供給部。在所述情況下，也可在腔室2外設置貯存處理液的罐及加熱來自罐的處理液的加熱部等。另外，使來自罐的處理液通過的流路部也可與氣體流路部51同樣地組入至芯層25內。A supply unit for supplying fine mist of the processing liquid or vapor (smoke) of the processing liquid may be provided in the chamber 2 of the substrate processing apparatus 1 . In this case, a tank for storing the processing liquid, a heating unit for heating the processing liquid from the tank, etc. may be provided outside the chamber 2 . In addition, the flow path portion through which the processing liquid from the tank passes may be incorporated into the core layer 25 in the same manner as the gas flow path portion 51 .
已對本發明進行詳細說明，但所述說明在所有方面都是例示，本發明並不限定於此。可知在不脫離本發明的範圍的情況下，可設想出未例示的無數變形例。所述各實施方式及各變形例中所說明的各構成只要不相互矛盾，就可以適當組合或省略。Although the present invention has been described in detail, the description is illustrative in all respects and the present invention is not limited thereto. It is understood that numerous modifications that are not illustrated can be conceived without departing from the scope of the present invention. The configurations described in the above-described embodiments and modifications may be appropriately combined or omitted as long as they do not conflict with each other.
1、1A:基板處理裝置 2、2A:腔室 3:支撐銷 4:熱板 5:高溫氣體供給部 9:基板 21:頂板部 22:側壁部 23:底部 25:芯層 26:第一纖維強化樹脂層 27:第二纖維強化樹脂層 31:銷驅動部 51:氣體流路部 53:噴射部 55:加熱器 57:供氣部 61:減壓部 100:臂 221:開口部 223:門部 224:通氣口 225:排氣口 251:收容槽 261:第一內部層 263:第一表面層 271:第二內部層 273:第二表面層 1. 1A: Substrate processing device 2. 2A: Chamber 3: Support pin 4:Hot plate 5: High temperature gas supply department 9:Substrate 21:Roof part 22: Side wall part 23:Bottom 25:Core layer 26: First fiber reinforced resin layer 27: Second fiber reinforced resin layer 31: Pin drive department 51: Gas flow path part 53:Injection Department 55:Heater 57:Air supply department 61:Decompression Department 100:arm 221:Opening part 223:Department 224: Ventilation port 225:Exhaust port 251: Containment tank 261: First inner layer 263: First surface layer 271:Second inner layer 273:Second surface layer
圖1是表示第一實施方式的基板處理裝置的立體圖。 圖2是第一實施方式的基板處理裝置的剖面圖。 圖3是表示高溫氣體供給部的圖。 圖4是表示腔室的一部分的剖面圖。 圖5是表示組入有氣體流路部的頂板部的剖面圖。 圖6是表示第二實施方式的基板處理裝置的概略圖。 FIG. 1 is a perspective view showing the substrate processing apparatus according to the first embodiment. FIG. 2 is a cross-sectional view of the substrate processing apparatus according to the first embodiment. FIG. 3 is a diagram showing a high-temperature gas supply unit. Fig. 4 is a cross-sectional view showing a part of the chamber. FIG. 5 is a cross-sectional view showing the top plate portion in which the gas flow path portion is incorporated. FIG. 6 is a schematic diagram showing a substrate processing apparatus according to a second embodiment.
1:基板處理裝置 1:Substrate processing device
2:腔室 2: Chamber
21:頂板部 21:Roof part
22:側壁部 22: Side wall part
221:開口部 221:Opening part
223:門部 223:Department
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